CN103066924A - Ultra-wide band and low noise amplifier - Google Patents
Ultra-wide band and low noise amplifier Download PDFInfo
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- CN103066924A CN103066924A CN2011103198010A CN201110319801A CN103066924A CN 103066924 A CN103066924 A CN 103066924A CN 2011103198010 A CN2011103198010 A CN 2011103198010A CN 201110319801 A CN201110319801 A CN 201110319801A CN 103066924 A CN103066924 A CN 103066924A
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Abstract
The invention discloses an ultra-wide band and low noise amplifier which is composed of a matching level, an amplifying level and a loading level in a sequential connection mode. The amplifying level is composed of four metal oxide semiconductor (MOS) tubes and two feedback circuits, and the amplifying level is a four-terminal network with two input ends and two output ends, wherein a first input end is connected with the grid electrode of a first MOS tube, a first output end is connected with the drain electrode of a second MOS tube, and a first feedback circuit is connected between the grid electrode of the first MOS tube and the drain electrode of the second MOS tube. A second input end of the amplifying level is connected with the grid electrode of a third MOS tube, a second output end of the amplifying level is connected with the drain electrode of a fourth MOS tube, and a second feedback circuit is connected between the grid electrode of the third MOS tube and the drain electrode of the fourth MOS tube. The two common source MOS tubes, namely the drain ends of the first MOS tube and the third MOS tube are respectively connected with two common gate MOS tubes, namely the source ends of the second MOS tube and the fourth MOS tube. The ultra-wide band and low noise amplifier is simple in structure, low in energy consumption, and capable of meeting the function requirements of an ultra-wide band communication system in a full-band section.
Description
Technical field
The invention belongs to the radio frequency integrated circuit design field, particularly be applied to a kind of ultra-wideband low-noise amplifier of ultra-wideband communication system.
Background technology
At present, ultra-wideband communications mainly contains dual mode, and a kind of is base band burst pulse form, by mode carry informations such as PPM; Another kind is the bandpass modulation carrier format, by MB-OFDM, and the modulation system carry informations such as DS-UWB.In the communication system of this two schemes, receiver has all used wideband low noise amplifier (LNA) module.
The implementation of traditional CMOS broadband LNA adopts distributed and resistance negative feedback structure in parallel usually.
The characteristics of lower these two kinds of structures of surface analysis.
(1) distributed amplifier: this kind amplifier can provide good Input matching, and gain more smooth in the wide frequency range is provided, and higher third order intermodulation point IIP
3But because need the transmission line of high Q value, this just so that chip area strengthens, is unfavorable for reducing cost; In addition, because the transistorized gain characteristic of CMOS, distributed amplifier can not reach very high gain, about the about 8dB of its average gain.This is inadequate in some application scenario to receiving the UWB signal.And distributed amplifier also consumes too much dc power, also do not meet the requirement of low-power consumption UWB system.
(2) resistance amplifier with parallel negative-feedback: this kind amplifier can provide the broadband Input matching, comes noise-reduction coefficient by feedback.But because the transistorized low mutual conductance of CMOS, cause to consume large power consumption and go the single-stage loop gain that reaches higher, also can't adapt to the requirement of low-power consumption UWB system.And as adopting multistage amplification to improve gain, then may cause stability problem.
In existing UWB LNA technology, mainly be divided into two kinds of topological structures.
A kind of is to adopt the one-level structure for amplifying, and dual mode is arranged.First kind of way is single-ended cascade and utilizes connection peaking technique spread bandwidth and improve gain, the advantage of its circuit is can reach about 10dB in the low-frequency range 3.1GHz-5.2GHz of ultra broadband frequency range gain, noise factor is about 4dB, power consumption is also smaller simultaneously, chip area is less, shortcoming is at high band, and this topological structure is difficult to realize the mutual compromise of high-gain and low-noise factor; The second way is the difference cascode structure, utilizes negative-feedback technology to come Bandwidth to improve gain, the advantage of its circuit be at the low-frequency range 3.1GHz-5.2GHz of ultra broadband frequency range gain flatness less than 1dB, the minimal noise coefficient is at 3.5dB, power consumption 14.4mW; The shortcoming gain is less than 10dB and at high band, and this topological structure is difficult to realize high-gain.
The another kind of two-layer configuration that adopts, two electrode structures have dual mode.First kind of way is that the first order is come spread bandwidth with common gate structure, it is simple that its circuit topological structure of gain is improved with cascodes in the second level, and gain also is higher than 10dB, and input-output adapt ation is better, gain flatness is also lower, and shortcoming is that noise factor is relatively large; The second way is that two-stage is all used cascodes, and utilizing negative-feedback technology to come Bandwidth to improve its advantage of gain is that gain can reach very high, and gain flatness is very low, and noise factor is also less, and shortcoming is that power consumption is very large.
So how to design a kind of wideband low noise amplifier, the technical indicator of noise factor, gain, input-output adapt ation all is improved to some extent, become an important exploitation problem.
CN1832335A has disclosed a kind of CMOS ultra-wideband low-noise amplifier in invention disclosed patent application on the 13rd September in 2006, its amplifying circuit adopts the difference cascode structure for amplifying to be comprised of two PMOS pipes and four NMOS, at the low-frequency range 3.1GHz-5.2GHz of ultra broadband frequency range higher gain and lower noise factor are arranged, but used the shunting of two PMOS pipes, system power dissipation is increased, for the UWB system, this can't satisfy the requirement of system low-power consumption; Its working frequency range is low-frequency range 3.1GHz-5.2GHz simultaneously, can't reach the requirement of system's high-gain and low-noise factor at high band.
Summary of the invention
Technical problem: the object of the invention is to: for the shortcoming of above prior art existence, design a kind of in the full frequency band of UWB (3.1-10.6GHz) have better gain, noise factor, input-output adapt ation, the ultra-wideband low-noise amplifier integrated circuit of power consumption performance index.
Technical scheme: for achieving the above object, the technical solution used in the present invention is as follows:
A kind of ultra-wideband low-noise amplifier is connected to form successively by matching stage, amplifying stage, load stage, and described amplifying stage is comprised of four metal-oxide-semiconductors and two feedback circuits, and amplifying stage is four port networks, two inputs, two outputs; Wherein, first input end connects the grid of the first pipe, and the drain electrode of first output termination the second metal-oxide-semiconductor is connected the first feedback circuit between the drain electrode of the grid of the first metal-oxide-semiconductor and the second metal-oxide-semiconductor; The grid of the second input termination the 3rd metal-oxide-semiconductor, the drain electrode of the second output termination the 4th metal-oxide-semiconductor is connected the second feedback circuit between the drain electrode of the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor; Two the common source metal-oxide-semiconductors i.e. drain terminal of the first metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor connect respectively two altogether i.e. sources of the second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor of grid metal-oxide-semiconductors.
Described the first feedback circuit is composed in series by the first feedback resistance, the first feedback capacity, the first feedback inductance; The second feedback circuit is composed in series by the second feedback resistance, the second feedback capacity, the second feedback inductance.
Beneficial effect: amplifying stage of the present invention is comprised of four metal-oxide-semiconductors and two feedback circuits, and is simple in structure, energy consumption is low, and (3.1-10.6GHz) all has preferably gain, noise factor, input-output adapt ation, power consumption performance index in the UWB full frequency band.
Description of drawings
Below in conjunction with accompanying drawing the utility model embodiment is elaborated.
Fig. 1: broadband LNA structure chart;
Fig. 2: matching stage circuit diagram;
Fig. 3: amplification grade circuit figure;
Fig. 4: ultra-wideband low-noise amplifier integrated circuit figure of the present invention;
Fig. 5: example S21 and NF simulation result figure;
Fig. 6: example S11 and S22 simulation result figure.
Embodiment
As shown in Figure 1, a kind of ultra-wideband low-noise amplifier is connected to form successively by matching stage 1, amplifying stage 2, load stage 3.
As shown in Figure 3, amplifying stage 2 is comprised of four metal-oxide-semiconductors and two feedback circuits, and amplifying stage 2 is four port networks, two inputs, two outputs; Wherein, first input end Vim connects the grid of the first metal-oxide-semiconductor M1, and the first output end vo m connects the drain electrode of the second metal-oxide-semiconductor M2, is connected the first feedback circuit between the drain electrode of the grid of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2; The second input Vip connects the grid of the 3rd metal-oxide-semiconductor M3, and the second output end vo p connects the drain electrode of the 4th metal-oxide-semiconductor M4, is connected the second feedback circuit between the drain electrode of the grid of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4; Two the common source metal-oxide-semiconductors i.e. drain terminal of the first metal-oxide-semiconductor M1, the 3rd metal-oxide-semiconductor M3 connect respectively two altogether i.e. sources of the second metal-oxide-semiconductor M2, the 4th metal-oxide-semiconductor M4 of grid metal-oxide-semiconductors.
The first feedback circuit is by the first feedback resistance R
F1, the first feedback capacity C
F1, the first feedback inductance L
F1Be composed in series successively; The second feedback circuit is by the second feedback resistance R
F2, the second feedback capacity C
F2, the second feedback inductance L
F2Be composed in series successively.First, second feedback resistance R
F1, R
F2Be used for controlling the feedback quantity that feeds back to grid.First, second capacitance C
F1, C
F2Be used for reducing dc power, make simultaneously AC signal feed back to grid.First, second feedback inductance L
F1, L
F2Effect be that high band at amplifier presents a very high reactance, do not allow circuit that the negative feedback that reduces gain is arranged at high band.Come spread bandwidth by the negative feedback that reduces high band, also improved the gain of LNA at high band simultaneously.
As shown in Figure 2, described matching stage 1 is a LC band pass filter, is used for widening frequency band and uses.
As shown in Figure 4, described load stage 3 is the inductance resistance series circuit, consists of the shunt peaking load, formed a zero point, expand the bandwidth of circuit, used simultaneously the shunt peaking load also to compensate the high-frequency gain of circuit, improved the gain flatness of circuit at whole bandwidth of operation.
The purpose of while in order to test, output consists of the source class follower by 4 metal-oxide-semiconductors, is used for driving the load terminal of 50 Ω.
The below provides the example of a specific implementation.
Relevant circuit element parameter is as follows:
L
11＝L
12＝1.7nH，C
1＝55fF，L
2＝4.85nH，C
21＝C
22＝900fF；
R
f1＝R
f2＝1KΩ，L
f1＝L
f2＝308pH，C
f1＝C
f2＝80.5fF；
R
L1＝R
L2＝85Ω，L
L1＝L
L2＝3.57nH；
W
M1＝W
M3＝110μm，W
M2＝W
M4＝70μm；
W
M5＝W
M7＝40μm，W
M6＝W
M8＝75μm。
The length of all MOS devices is 0.18 μ m, and circuit voltage Vdd is 1.8V, and the main body circuital current consumes 10mA, source class follower current drain 4mA, and total power consumption is 25.2mW.
The simulation result of circuit such as Fig. 5, shown in Figure 6, circuit working frequency range 3.1-10.6GHz, Input matching S
11Less than-13.72dB, output matching S
22Less than-14.23dB, gain S
21Be 13.48dB to the maximum, gain S
21Minimum is 12.04dB, and gain fluctuation is 1.44dB, and noise factor NF is 2.392-2.734dB.
Claims (2)
1. ultra-wideband low-noise amplifier, connected to form successively by matching stage (1), amplifying stage (2), load stage (3), it is characterized in that described amplifying stage (2) is comprised of four metal-oxide-semiconductors and two feedback circuits, amplifying stage (2) is four port networks, two inputs, two outputs; Wherein, first input end (Vim) connects the grid of the first metal-oxide-semiconductor (M1), the first output (Vom) connects the drain electrode of the second metal-oxide-semiconductor (M2), is connected the first feedback circuit between the grid of the first metal-oxide-semiconductor (M1) and the drain electrode of the second metal-oxide-semiconductor (M2); The second input (Vip) connects the grid of the 3rd metal-oxide-semiconductor (M3), the second output (Vop) connects the drain electrode of the 4th metal-oxide-semiconductor (M4), is connected the second feedback circuit between the grid of the 3rd metal-oxide-semiconductor (M3) and the drain electrode of the 4th metal-oxide-semiconductor (M4); Two the common source metal-oxide-semiconductors i.e. drain terminal of the first metal-oxide-semiconductor (M1), the 3rd metal-oxide-semiconductor (M3) connect respectively two altogether i.e. sources of the second metal-oxide-semiconductor (M2), the 4th metal-oxide-semiconductor (M4) of grid metal-oxide-semiconductors.
2. a kind of ultra-wideband low-noise amplifier integrated circuit as claimed in claim 1 is characterized in that described the first feedback circuit is by the first feedback resistance (R
F1), the first feedback capacity (C
F1), the first feedback inductance (L
F1) be composed in series; The second feedback circuit is by the second feedback resistance (R
F2), the second feedback capacity (C
F2), the second feedback inductance (L
F2) be composed in series.
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| CN2011103198010A CN103066924A (en) | 2011-10-20 | 2011-10-20 | Ultra-wide band and low noise amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746663A (en) * | 2014-01-21 | 2014-04-23 | 上海镭芯微电子有限公司 | Ultra-wide-band low-noise singlechip integrated amplifier |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060132242A1 (en) * | 2004-12-21 | 2006-06-22 | Seon-Ho Han | Low noise amplifier for wideband tunable matching |
| CN101350592A (en) * | 2008-07-11 | 2009-01-21 | 东南大学 | Ultra-wideband low noise amplifier |
| CN101656516A (en) * | 2009-07-23 | 2010-02-24 | 复旦大学 | Full-difference CMOS ultra wide band low-noise amplifier |
| CN101741316A (en) * | 2009-12-24 | 2010-06-16 | 北京时代民芯科技有限公司 | Gain variable broadband radio frequency low-noise amplifier |
| CN203313125U (en) * | 2011-10-20 | 2013-11-27 | 苏州微体电子科技有限公司 | Amplifier with ultra wide band and low noise |
-
2011
- 2011-10-20 CN CN2011103198010A patent/CN103066924A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060132242A1 (en) * | 2004-12-21 | 2006-06-22 | Seon-Ho Han | Low noise amplifier for wideband tunable matching |
| CN101350592A (en) * | 2008-07-11 | 2009-01-21 | 东南大学 | Ultra-wideband low noise amplifier |
| CN101656516A (en) * | 2009-07-23 | 2010-02-24 | 复旦大学 | Full-difference CMOS ultra wide band low-noise amplifier |
| CN101741316A (en) * | 2009-12-24 | 2010-06-16 | 北京时代民芯科技有限公司 | Gain variable broadband radio frequency low-noise amplifier |
| CN203313125U (en) * | 2011-10-20 | 2013-11-27 | 苏州微体电子科技有限公司 | Amplifier with ultra wide band and low noise |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746663A (en) * | 2014-01-21 | 2014-04-23 | 上海镭芯微电子有限公司 | Ultra-wide-band low-noise singlechip integrated amplifier |
| CN103746663B (en) * | 2014-01-21 | 2017-01-18 | 上海镭芯微电子有限公司 | Ultra-wide-band low-noise singlechip integrated amplifier |
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