CN102158179B - Multimode low-noise amplifier adopting positive and negative feedback structure - Google Patents
Multimode low-noise amplifier adopting positive and negative feedback structure Download PDFInfo
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- CN102158179B CN102158179B CN201110066048.9A CN201110066048A CN102158179B CN 102158179 B CN102158179 B CN 102158179B CN 201110066048 A CN201110066048 A CN 201110066048A CN 102158179 B CN102158179 B CN 102158179B
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Abstract
The invention belongs to the technical field of radio frequency integrated circuits (RFICs), and in particular relates to a multimode low-noise amplifier adopting a positive and negative feedback structure. The amplifier comprises a transconductance amplifier, a positive feedback network, a negative feedback network and an output LC resonant network. In the circuit structure of the amplifier, a positive feedback technology and a negative technology are combined to reduce noises of the low-noise amplifier, improve gains and realize adjustable frequency bands by adjusting a capacitor array and an inductor array of the output LC resonant network. The amplifier has the advantages of being large in gains, low in power consumption and low in noise, requires no additional off-chip matched components and the like. The amplifier can be applied in a radio frequency front end of a multimode receiver which can be compatible with various wireless communication standards.
Description
Technical field
The invention belongs to technical field of radio frequency integrated circuits, be specifically related to a kind of multi-mode low-noise amplifier that adopts positive feedback and negative feedback structure.
Background technology
Along with the progress of society with technology, increasing wireless application is developed, and all kinds of new wireless standards are constantly released.Multi-mode radio frequency receiver is the study hotspot of academia and industrial quarters in recent years, can realize the compatibility of multiple kinds, and can reduce the power consumption of whole receiver and the area of chip by single receiver link.
In receiver system, low noise amplifier, as the first order of link, has been born important effect, and its major function is to provide the noise that enough gains overcome follow-up (as frequency mixer).The gain of low noise amplifier is often directly proportional to power consumption, and for radio-frequency transmitter system, low-power consumption is its basic demand, and therefore in assurance, in enough gain situations, how reducing power consumption is the important problem that is applied to low noise amplifier design in receiver system.Except this gain and additional the least possible noise are provided, low noise amplifier should be realized impedance matching to a certain degree to reach the object of maximum power transfer to input signal source (as antenna).When the prime of low noise amplifier is a passive filter, impedance matching is particularly important, because the situation that the transmission characteristic of a lot of filters is mated for terminal is highstrung.Multi-mode low-noise amplifier mainly contains two kinds of structures: the input in parallel of a plurality of narrow-band low-noise amplifiers and wideband structural, the former has better noiseproof feature and lower noise with respect to the latter, and has good inhibitory action for block signal.
In sum, for the design of multi-mode low-noise amplifier, the optimization that how to realize the performances such as gain, power consumption, Input matching and noise improves, and has very important significance.
Summary of the invention
The object of the present invention is to provide a kind of power consumption province, low noise, the much higher mould low noise amplifier of gain, to different agreements, circuit can be adjusted its centre frequency by switch, does not need extra sheet to mate components and parts outward simultaneously.
Multi-mode low-noise amplifier provided by the invention, adopts positive feedback and negative feedback structure, as shown in Figure 1.Low noise amplifier 5 proposed by the invention, is comprised of trsanscondutance amplifier 1, positive feedback network 2, negative feedback network 3 and output LC resonant network 4; Vin is input port, and Vout is output port.Output impedance is the input signal source 6 of Rs, is generally the band pass filter of antenna or antenna rear class.DC channel inductance 7, for low noise amplifier provides a DC point.Positive feedback network is connected across on the drain terminal and source of trsanscondutance amplifier, and negative feedback network is connected in the source and grid end of trsanscondutance amplifier.
In such scheme, trsanscondutance amplifier adopts grid NMOS pipe or PMOS pipe altogether, can be single-ended input or difference input.This trsanscondutance amplifier has lower input impedance and higher output impedance, and output current direction is inside.
In such scheme, positive feedback network and negative feedback network can be realized by passive circuit, also can be realized by active circuit.Negative feedback network can improve the amplification coefficient of trsanscondutance amplifier under low-power consumption condition, but its effect is subject to the restriction of Input matching, and positive feedback network can be eliminated the restriction of Input matching, and has very high gain, but its power consumption is very large.Two kinds of technology of positive feedback network and negative feedback network can be complementary, and both combinations are finally the optimization that brings power consumption, Input matching, and its noiseproof feature is better than using separately a kind of situation of feedback network.
In such scheme, output LC resonant network comprises capacitance adjustment array and adjustment of inductance array, by switch, selects suitable partition capacitance or inductance, and wherein the selection of inductance is for coarse adjustment, the selection of electric capacity is for fine tuning, power gain or voltage gain is adjusted in required frequency range the highest.Therefore do not need extra sheet to mate components and parts adjustment outward.
From technique scheme, can find out, the present invention has following beneficial effect:
1, utilize the present invention, the radiofrequency signal input that adopts a set of amplifier circuit in low noise can complete under various protocols receives and amplifies, and has improved the integrated level of circuit, has saved chip area, and has not needed extra sheet to mate components and parts outward.
2, utilize the present invention, positive feedback network and two kinds of technology of negative feedback network are combined, reduced power consumption and the noise of low noise amplifier, improved gain.
Accompanying drawing explanation
Fig. 1 is the multi-mode low-noise amplifier theory diagram of employing positive feedback provided by the invention and negative feedback structure.
Fig. 2 is that the multi-mode low-noise amplifier of employing positive feedback provided by the invention and negative feedback structure is in the technologic a kind of specific implementation of CMOS.
Number in the figure: 1 is trsanscondutance amplifier, 2 is positive feedback network, and 3 is negative feedback network, and 4 is output LC resonant network, and 5 is low noise amplifier, and 6 is input signal source, and 7 is DC channel inductance.
Embodiment
Below in conjunction with accompanying drawing 1 and accompanying drawing 2, elaborate enforcement example of the present invention, its working frequency range is divided into low-frequency range (1.9GHz～2.3GHz) and high band (5GHz～6GHz), the multiple standards such as compatible PCS1900, WCDMA, 802.11a.
As shown in Figure 2, the multi-mode low-noise amplifier of employing positive feedback of the present invention and negative feedback structure comprises trsanscondutance amplifier, positive feedback network, negative feedback network and output LC resonant network.Trsanscondutance amplifier manages (M1) by a NMOS and the 2nd NMOS pipe (M2) forms, and it is differential mode input, in order to reduce common mode disturbances, suppresses the noise on VDD-to-VSS, and its mutual conductance is Gm.The first electric capacity (C1) and the second electric capacity (C2) have formed negative feedback network, the first electric capacity (C1) is connected to the source of grid end and the 2nd NMOS pipe (M2) of a NMOS pipe (M1), and the second electric capacity (C2) is connected to the source of grid end and the NMOS pipe (M1) of the 2nd NMOS pipe (M2).The gain of negative feedback network is fixed, and is A
nEG=1.The 3rd electric capacity (C3), the 4th electric capacity (C4), a PMOS pipe (M3) and the 2nd PMOS pipe (M4) have formed positive feedback network, the 3rd electric capacity (C3) is managed the source of (M1) and the drain terminal of the 2nd NMOS pipe (M2) with PMOS pipe (M3) grid end series connection at a NMOS, and the 4th electric capacity (C4) is managed the source of (M2) and the drain terminal of NMOS pipe (M1) with the 2nd PMOS pipe (M4) grid end series connection at the 2nd NMOS.The gain of its positive feedback network is to be determined by the mutual conductance of PMOS pipe, can regulate, but in order to guarantee the stable of positive feedback network, its gain is made as A
pOS=0.5.The 3rd electric capacity (C3), the 4th electric capacity (C4) are ac coupling capacitors.
Output LC resonant network comprises the first inductance (L1), the second inductance (L2), the 3rd inductance (L3), the 4th inductance (L4), the 5th electric capacity (C5), the 6th electric capacity (C6), the 7th electric capacity (C7), the 8th electric capacity (C8), the 9th electric capacity (C9), the tenth electric capacity (C10), the 3rd PMOS pipe (M5), the 3rd NMOS pipe (M6), the 4th NMOS pipe (M7) and the 5th NMOS pipe (M8).The first inductance (L1) and the 3rd inductance (L3) are connected on NMOS pipe (M1) drain terminal, and the second inductance (L2) and the 4th inductance (L4) are connected on the 2nd NMOS pipe (M2) drain terminal, and the 3rd PMOS pipe (M5) is connected between their concatenation points.The 5th electric capacity (C5), the 3rd NMOS pipe (M6), the 6th electric capacity (C6), the 7th electric capacity (C7), the 4th NMOS pipe (M7), the 8th electric capacity (C6) and the 9th electric capacity (C9), the 5th NMOS pipe (M8), three groups of capacitance adjustment arrays of the tenth electric capacity (C10) are connected in parallel on the drain terminal of a NMOS pipe (M1) and the 2nd NMOS pipe (M2).Exportable LC resonant network is realized frequency-selecting function, and when direct current attrition voltage nargin not, improve the dynamic range of output.Control the conducting of the 3rd PMOS pipe (M5) and close, can ac short circuit or not short circuit the 3rd inductance (L3) and the 4th inductance (L4), realize the switching of high band and low-frequency range.Control the conducting of nmos switch pipe the 3rd NMOS pipe (M6), the 4th NMOS pipe (M7) and the 5th NMOS pipe (M8) and close, can realize the fine tuning of frequency.The impedance of output LC resonant network is Z
l, Z
lbe chosen as and make power gain or voltage gain reach the highest at centre frequency place, so just can cover respectively the frequency range of the various protocols standards such as PCS1900, WCMDA, 802.11a.
While adopting the multi-mode low-noise amplifier work of positive feedback and negative feedback structure, the input resistance Zin seeing into from input port Vin can be expressed as:
In the frequency range of signal, make Zin equal Rs and realized input impedance coupling, so input impedance coupling is relevant to the mutual conductance of trsanscondutance amplifier.
Employing positive feedback described in Fig. 2 and the multi-mode low-noise amplifier of negative feedback structure, the voltage gain Av from input port Vin to output port Vout can be expressed as:
As described in above formula, effect due to positive feedback network and negative feedback network, input equivalent transconductance does not reduce, and output equivalent impedance brings up to original 4 times, and in the situation that not consuming extracurrent, whole low noise amplifier gain is brought up to original 4 times like this.
Lower surface analysis adopts the noise of the multi-mode low-noise amplifier of positive feedback and negative feedback structure, there are three parts in the overall noise source of circuit: the thermal noise of trsanscondutance amplifier NMOS pipe, the thermal noise of positive feedback network PMOS pipe, the thermal noise of output LC resonant network electric capacity and inductance.The main source of noise is the thermal noise of trsanscondutance amplifier NMOS pipe, and positive feedback network is negligible with output LC resonant network, and the noise factor NF of the contribution of whole circuit can be expressed as:
As described in above formula, due to the effect of positive feedback network and negative feedback network, the noise contribution of whole circuit is reduced to original 1/4th.
Component value in Circuit tuning, make it meet the requirement of above-described impedance matching, voltage gain and noise factor, complete the multiple standards such as compatible PCS1900, a WCDMA, 802.11a, adopted the multi-mode low-noise amplifier of positive feedback and negative feedback structure.
It should be noted last that, above embodiment is unrestricted in order to technical scheme of the present invention to be described, those of ordinary skill in the art is to be understood that, can modify or be equal to replacement technical scheme of the present invention, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in claim scope of the present invention.
Claims (1)
1. adopt a multi-mode low-noise amplifier for positive feedback and negative feedback structure, it is characterized in that being formed by trsanscondutance amplifier (1), positive feedback network (2), negative feedback network (3) and output LC resonant network (4); Wherein, positive feedback network (2) is connected on the drain terminal and source of trsanscondutance amplifier (1), and negative feedback network (3) is connected in the source and grid end of trsanscondutance amplifier (1);
Described trsanscondutance amplifier (1) adopts grid NMOS pipe or PMOS pipe altogether, is single-ended input or difference input; Output current direction is inside;
Described positive feedback network (2) and negative feedback network (3) are realized by passive circuit, or are realized by active circuit;
Described output LC resonant network (4) comprises capacitance adjustment array and adjustment of inductance array, by switch, select suitable partition capacitance or inductance, wherein the selection of inductance is for coarse adjustment, the selection of electric capacity is for fine tuning, power gain or voltage gain is adjusted in required frequency range the highest;
Described negative feedback network (3) is comprised of the first electric capacity (C1), the second electric capacity (C2), a NMOS pipe (M1) and the 2nd NMOS pipe (M2); The first electric capacity (C1) is connected to the source of grid end and the 2nd NMOS pipe (M2) of a NMOS pipe (M1), and the second electric capacity (C2) is connected to the source of grid end and the NMOS pipe (M1) of the 2nd NMOS pipe (M2); Positive feedback network is comprised of the 3rd electric capacity (C3), the 4th electric capacity (C4), a PMOS pipe (M3) and the 2nd PMOS pipe (M4); The 3rd electric capacity (C3) is managed the source of (M1) and the drain terminal of the 2nd NMOS pipe (M2) with PMOS pipe (M3) grid end series connection at a NMOS, and the 4th electric capacity (C4) is managed the source of (M2) and the drain terminal of NMOS pipe (M1) with the 2nd PMOS pipe (M4) grid end series connection at the 2nd NMOS;
Described output LC resonant network (4) comprises the first inductance (L1), the second inductance (L2), the 3rd inductance (L3), the 4th inductance (L4), the 5th electric capacity (C5), the 6th electric capacity (C6), the 7th electric capacity (C7), the 8th electric capacity (C8), the 9th electric capacity (C9), the tenth electric capacity (C10), the 3rd PMOS pipe (M5), the 3rd NMOS pipe (M6), the 4th NMOS pipe (M7) and the 5th NMOS pipe (M8); The first inductance (L1) and the 3rd inductance (L3) are connected on NMOS pipe (M1) drain terminal, the second inductance (L2) and the 4th inductance (L4) are connected on the 2nd NMOS pipe (M2) drain terminal, and the 3rd PMOS pipe (M5) is connected between the series connection point and the second inductance (L2) and the concatenation points of the 4th inductance (L4) of the first inductance (L1) and the 3rd inductance (L3); The 5th electric capacity (C5), the 3rd NMOS pipe (M6), the 6th electric capacity (C6), the 7th electric capacity (C7), the 4th NMOS pipe (M7), the 8th electric capacity (C8) and the 9th electric capacity (C9), the 5th NMOS pipe (M8), three groups of capacitance adjustment arrays of the tenth electric capacity (C10) are connected in parallel on the drain terminal of a NMOS pipe (M1) and the 2nd NMOS pipe (M2); Control the conducting of the 3rd PMOS pipe (M5) and close, in order to ac short circuit or not short circuit the 3rd inductance (L3) and the 4th inductance (L4), realizing the switching of high band and low-frequency range; Control the conducting of the 3rd NMOS pipe (M6), the 4th NMOS pipe (M7) and the 5th NMOS pipe (M8) and close, in order to realize the fine tuning of frequency.
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| CN106849894B (en) * | 2017-01-23 | 2018-10-02 | 东南大学 | A kind of gain-adjusted structure based on total grid cascode low-noise amplifiers |
| CN106888028A (en) * | 2017-04-12 | 2017-06-23 | 复旦大学 | A kind of high sensitivity receiver front-ends circuit with impedance mapping function |
| CN107645300B (en) * | 2017-10-16 | 2020-04-10 | 中国科学院上海高等研究院 | Current multiplexing low-power consumption radio frequency receiver |
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| CN112436811B (en) * | 2020-10-13 | 2021-06-08 | 华南理工大学 | Operational amplifier, chip and method based on metal oxide TFT |
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| CN101656516A (en) * | 2009-07-23 | 2010-02-24 | 复旦大学 | Full-difference CMOS ultra wide band low-noise amplifier |
| CN101938256B (en) * | 2010-09-03 | 2012-12-26 | 清华大学 | Fully integrated dual-band configurable radio-frequency power amplifier |
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