CN101938256B - Fully integrated dual-band configurable radio-frequency power amplifier - Google Patents

Fully integrated dual-band configurable radio-frequency power amplifier Download PDF

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Publication number
CN101938256B
CN101938256B CN2010102725939A CN201010272593A CN101938256B CN 101938256 B CN101938256 B CN 101938256B CN 2010102725939 A CN2010102725939 A CN 2010102725939A CN 201010272593 A CN201010272593 A CN 201010272593A CN 101938256 B CN101938256 B CN 101938256B
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China
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mos transistor
electric capacity
inductance
frequency
power amplifier
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CN2010102725939A
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Chinese (zh)
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CN101938256A (en
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池保勇
张春
王志华
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清华大学
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    • Y02B60/50

Abstract

The invention discloses a fully integrated dual-band configurable radio-frequency power amplifier, belonging to the technical field of wireless communication. In the invention, a cascode amplifier structure is adopted, an LC (Inductance-capacitance) resonant network is taken as a load, and the resonant network consists of 6 MOS (Metal-oxide Semiconductor) transistors M1-M6, 4 capacitors C1-C4, 2 inductors L1-L2 and 2 resistors R1-R2. Different induction values are supplied at a high frequency band and a low frequency band to be resonant to the capacitors, and therefore, the amplifier can both supply higher gains at the high frequency band and the low frequency band. Meanwhile, the amplifier does not introduce a switch with larger loss on a signal channel, thereby avoiding that the efficiency of the radio-frequency power amplifier is lowered because of switch loss. The novel dual-band configurable radio-frequency power amplifier can be completely integrated on a same chip, thereby realizing high integration level. The invention can both supply high gains in two frequency bands with a large frequency difference and also have high efficiency.

Description

The configurable radio-frequency power amplifier of fully integrated double frequency-band
Technical field
The invention belongs to wireless communication technology field, the configurable radio-frequency power amplifier of particularly a kind of fully integrated double frequency-band.
Background technology
Modern society is a society that information is highly developed, and people extensively come exchange message through various communications.Various wireless communications application emerge in an endless stream, greatly convenient people's life.But under present technical conditions, different because of operating frequency and performance requirement, each wireless application requires the independent RF front-end circuit of a cover.Caused like this around people's life to have various radio transceiver circuitry, people need select different transceiver products to needed wireless application, have brought a lot of inconvenience for people's life.Particularly in various portable products, various RF front-end circuits are also deposited and have greatly been increased small product size, improved product cost.Consider this point, people's configurable radio-frequency front-end that begins one's study.This radio-frequency front-end can dispose automatically its function based on application need, makes same set of hardware can satisfy the requirement of various radio communications, thereby reduces small product size and cost greatly.
In each functional module of radio-frequency front-end, radio-frequency power amplifier is to realize one of the most challenging module of configurability.Its reason is: radio-frequency power amplifier is operated in radio frequency band, requires the very high power of output to give sheet outer low-resistance load.In order at radio frequency band higher gain to be provided still, the resonant network that the various passive components of the general a large amount of uses of radio-frequency power amplifier constitute is done load.Make power amplifier configurable, therefore it should need to change the resonance frequency of resonant network in various frequency range work.People generally change the resonance frequency of resonant network through the capacitance network of insertion switch control.But, differ two bigger frequency range work if power amplifier need be configured in frequency, the inductance when guaranteeing high band in the resonant network can with node parasitic capacitance resonance, the inductance value of inductance is very little; Then when low-frequency range is worked, will introduce very big electric capacity comes and this small inductor resonance; The equiva lent impedance of considering resonant network under the integration environment is mainly decided by the inductance value and the quality factor of inductance, so uses during low-frequency range small inductor can greatly reduce the gain and the efficient of radio-frequency power amplifier.Another kind of way is the inductance of insertion switch control, uses the inductance of different electric sensibility reciprocal respectively in two frequency ranges of height, thereby guarantees all have higher gain at two band power amplifiers.But for radio-frequency power amplifier, the switch performance under the integration environment is very poor, and loss is very high.The power output of considering radio-frequency power amplifier is very high; Handled all is very big electric currents; If on the signal path of radio-frequency power amplifier, use the very big switch of this loss; Big electric current flows through these switches will introduce very big loss, thereby greatly reduce the efficient of radio-frequency power amplifier.
Summary of the invention
The objective of the invention is to have proposed the configurable radio-frequency power amplifier of a kind of fully integrated double frequency-band, it is characterized in that, the first input difference radiofrequency signal v IpConnect first capacitor C 1An end, the second input difference radiofrequency signal v InConnect second capacitor C 2An end, first capacitor C 1Another termination first resistance R 1An end and the first MOS transistor M 1Grid, second capacitor C 2Another termination second resistance R 2An end and the second MOS transistor M 2Grid, first resistance R 1The other end and second resistance R 2The other end link together and receive bias voltage input V BOn; The first MOS transistor M 1The source electrode and the second MOS transistor M 2Source electrode be connected together and ground connection the first MOS transistor M 1Drain electrode meet the 3rd MOS transistor M 3Source electrode, the second MOS transistor M 2Drain electrode meet the 4th MOS transistor M 4Source electrode, the 3rd MOS transistor M 3Grid and the 4th MOS transistor M 4The grid and first inductance L 1Centre cap be connected together and be connected to power supply V DDOn, the 3rd MOS transistor M 3The drain electrode and first inductance L 1An end, the 3rd capacitor C 3One terminate at together and receive difference output negative terminal v On, the 4th MOS transistor M 4The drain electrode and first inductance L 1The other end, the 4th capacitor C 4One terminate at together and receive difference output plus terminal v Op, the 3rd capacitor C 3The other end and second inductance L 2An end and the 5th MOS transistor M 5Drain electrode link to each other the 4th capacitor C 4The other end and second inductance L 2The other end and the 6th MOS transistor M 6Drain electrode link to each other the 5th MOS transistor M 5Grid and the 6th MOS transistor M 6Grid link to each other and receive Frequency Band Selection control signal V S, the 5th MOS transistor M 5Source electrode and the 6th MOS transistor M 6Source grounding constitute radio-frequency power amplifier.
Said radio-frequency power amplifier adopts cascade differential amplifier structure, does load with the LC resonant network; Bias voltage V BThrough first resistance R 1, second resistance R 2Direct current biasing is provided, first capacitor C for the first MOS transistor M1, the second MOS transistor M2 1, second capacitor C 2Be ac coupling capacitor, direct current signal played at a distance from straight effect that guaranteeing simultaneously that radiofrequency signal is harmless passes through first inductance L 1, second inductance L 2, the 3rd capacitor C 3, the 4th capacitor C 4, the 5th MOS transistor M 5, the 6th MOS transistor M 6And difference output plus terminal V Op, difference output negative terminal v OnThe node parasitic capacitance constitute the load resonant network, at useful signal frequency band interior resonance, load is provided for this amplifier; The 5th MOS transistor M 5, the 6th MOS transistor M 6By Frequency Band Selection control signal V SControl, they play the effect that is similar to switch; As Frequency Band Selection control signal V SDuring for high level, the 5th MOS transistor M 5With the 6th MOS transistor M 6Work in conducting state, with nodes X and Y from being electrically connected ground, second inductance L 2Two ends be shorted to ground, at this moment the resonance frequency of load resonant network is:
ω 1 = 1 0.5 × L 1 × ( C 3,4 + C op )
Wherein, C 3,4It is the 3rd capacitor C 3With the 4th capacitor C 4Capacitance, C OpBe the parasitic capacitance of each output node, at this moment radio-frequency power amplifier works in low-frequency range.
As Frequency Band Selection control signal V SDuring for low level, the 5th MOS transistor M 5With the 6th MOS transistor M 6Work in cut-off state, second inductance L 2With the 3rd capacitor C 3, the 4th capacitor C 4After the series connection again with first inductance L 1Parallel connection, second inductance L 2Inductive load can partial offset the 3rd capacitor C 3Or the 4th capacitor C 4Capacitive load, make and first inductance L 1The capacitive load of parallel resonance significantly reduces, thereby has improved the resonance frequency of load resonant network, and at this moment radio-frequency power amplifier works in high band.
The invention has the beneficial effects as follows that the fully integrated double frequency-band configurable of the present invention radio-frequency power amplifier adopts cascade differential amplifier structure; Do load with the LC resonant network; The load resonant network uses the inductance of same inductance value under two frequency ranges of height, can guarantee that therefore radio-frequency power amplifier has approximately uniform gain under two frequency ranges of height, simultaneously; The switch that the control frequency range is switched is not positioned on the signal path, has avoided reducing because of switching loss the efficient of radio-frequency power amplifier.The configurable radio-frequency power amplifier of this novel double frequency-band can be completely integrated in on the chip piece, has realized very high integrated level, and it all can provide very high gain and have very high efficient in two frequency bands that frequency differs greatly.
Description of drawings
Fig. 1 is the circuit theory diagrams of the configurable radio-frequency power amplifier of fully integrated double frequency-band.
Embodiment
The present invention proposes the configurable radio-frequency power amplifier of a kind of fully integrated double frequency-band.Explain below in conjunction with accompanying drawing.
Shown in Figure 1 is the circuit theory diagrams of the configurable radio-frequency power amplifier of fully integrated double frequency-band.This radio-frequency power amplifier is by 6 MOS transistor M 1-M 6, 4 capacitor C 1-C 4, one have centre tapped symmetric form inductance L 1, one do not have centre tapped symmetric form inductance L 2With 2 resistance R 1-R 2Form.The configurable radio-frequency power amplifier of this novel double frequency-band can be completely integrated in on the chip piece, has realized very high integrated level.It all can provide very high gain and have very high efficient in two frequency bands that frequency differs greatly.Among the figure, the first input difference radiofrequency signal v IpConnect first capacitor C 1An end, the second input difference radiofrequency signal v InConnect second capacitor C 2An end, first capacitor C 1Another termination first resistance R 1An end and the first MOS transistor M 1Grid, second capacitor C 2Another termination second resistance R 2An end and the second MOS transistor M 2Grid, first resistance R 1The other end and second resistance R 2The other end link together and receive bias voltage input V BOn; The first MOS transistor M 1The source electrode and the second MOS transistor M 2Source electrode be connected together and ground connection the first MOS transistor M 1Drain electrode meet the 3rd MOS transistor M 3Source electrode, the second MOS transistor M 2Drain electrode meet the 4th MOS transistor M 4Source electrode, the 3rd MOS transistor M 3Grid and the 4th MOS transistor M 4The grid and first inductance L 1Centre cap be connected together and be connected to power supply V DDOn, the 3rd MOS transistor M 3The drain electrode and first inductance L 1An end, the 3rd capacitor C 3One terminate at together and receive difference output negative terminal v On, the 4th MOS transistor M 4The drain electrode and first inductance L 1The other end, the 4th capacitor C 4One terminate at together and receive difference output plus terminal v Op, the 3rd capacitor C 3The other end and second inductance L 2An end and the 5th MOS transistor M 5Drain electrode link to each other the 4th capacitor C 4The other end and second inductance L 2The other end and the 6th MOS transistor M 6Drain electrode link to each other the 5th MOS transistor M 5Grid and the 6th MOS transistor M 6Grid link to each other and receive Frequency Band Selection control signal V S, the 5th MOS transistor M 5Source electrode and the 6th MOS transistor M 6Source grounding constitute radio-frequency power amplifier.
The operation principle of this RF power amplifier circuit is as follows soluble:
Said radio-frequency power amplifier adopts cascade differential amplifier structure, does load with the LC resonant network; Bias voltage V BThrough first resistance R 1, second resistance R 2Direct current biasing is provided, first capacitor C for the first MOS transistor M1, the second MOS transistor M2 1, second capacitor C 2Be ac coupling capacitor, direct current signal played at a distance from straight effect that guaranteeing simultaneously that radiofrequency signal is harmless passes through first inductance L 1, second inductance L 2, the 3rd capacitor C 3, the 4th capacitor C 4, the 5th MOS transistor M 5, the 6th MOS transistor M 6And difference output plus terminal v Op, difference output negative terminal v OnThe node parasitic capacitance constitute the load resonant network, at useful signal frequency band interior resonance, load is provided for this amplifier; The 5th MOS transistor M 5, the 6th MOS transistor M 6By Frequency Band Selection control signal V SControl, they play the effect that is similar to switch; As Frequency Band Selection control signal V SDuring for high level, the 5th MOS transistor M 5With the 6th MOS transistor M 6Work in conducting state, with nodes X and Y from being electrically connected ground, second inductance L 2Two ends be shorted to ground, at this moment the resonance frequency of load resonant network is:
ω 1 = 1 0.5 × L 1 × ( C 3,4 + C op )
Wherein, C 3,4It is the 3rd capacitor C 3With the 4th capacitor C 4Capacitance, C OpBe the parasitic capacitance of each output node, at this moment radio-frequency power amplifier works in low-frequency range.
As Frequency Band Selection control signal V SDuring for low level, the 5th MOS transistor M 5With the 6th MOS transistor M 6Work in cut-off state, second inductance L 2With the 3rd capacitor C 3, the 4th capacitor C 4After the series connection again with first inductance L 1Parallel connection, second inductance L 2Inductive load can partial offset the 3rd capacitor C 3Or the 4th capacitor C 4Capacitive load, make and first inductance L 1The capacitive load of parallel resonance significantly reduces, thereby has improved the resonance frequency of load resonant network, and at this moment radio-frequency power amplifier works in high band.
Can see; The fully integrated double frequency-band configurable of CMOS proposed by the invention radio-frequency power amplifier load resonant network under two frequency ranges of height uses the inductance of same inductance value; Therefore can guarantee that radio-frequency power amplifier has approximately uniform gain under two frequency ranges of height; Simultaneously, the switch that the control frequency range is switched is not positioned on the signal path, has avoided reducing because of switching loss the efficient of radio-frequency power amplifier.The configurable radio-frequency power amplifier of this novel double frequency-band can be completely integrated in on the chip piece, has realized very high integrated level, and it all can provide very high gain and have very high efficient in two frequency bands that frequency differs greatly.

Claims (2)

1. the configurable radio-frequency power amplifier of fully integrated double frequency-band is characterized in that, the first input difference radiofrequency signal v IpMeet the first electric capacity (C 1) an end, the second input difference radiofrequency signal v InMeet the second electric capacity (C 2) an end, the first electric capacity (C 1) another termination first resistance (R 1) an end and the first MOS transistor (M 1) grid, the second electric capacity (C 2) another termination second resistance (R 2) an end and the second MOS transistor (M 2) grid, the first resistance (R 1) the other end and the second resistance (R 2) the other end link together and receive bias voltage input V BOn; First MOS transistor (the M 1) the source electrode and the second MOS transistor (M 2) source electrode be connected together and ground connection the first MOS transistor (M 1) drain electrode meet the 3rd MOS transistor (M 3) source electrode, the second MOS transistor (M 2) drain electrode meet the 4th MOS transistor (M 4) source electrode, the 3rd MOS transistor (M 3) grid and the 4th MOS transistor (M 4) the grid and the first inductance (L 1) centre cap be connected together and be connected to power supply V DDOn, the 3rd MOS transistor (M 3) the drain electrode and the first inductance (L 1) an end, the 3rd electric capacity (C 3) one terminate at together and receive difference output negative terminal v On, the 4th MOS transistor (M 4) the drain electrode and the first inductance (L 1) the other end, the 4th electric capacity (C 4) one terminate at together and receive difference output plus terminal v Op, the 3rd electric capacity (C 3) the other end and the second inductance (L 2) an end and the 5th MOS transistor (M 5) drain electrode link to each other the 4th electric capacity (C 4) the other end and the second inductance (L 2) the other end and the 6th MOS transistor (M 6) drain electrode link to each other the 5th MOS transistor (M 5) grid and the 6th MOS transistor (M 6) grid link to each other and receive Frequency Band Selection control signal V S, the 5th MOS transistor (M 5) source electrode and the 6th MOS transistor (M 6) source grounding, constitute radio-frequency power amplifier.
2. according to the configurable radio-frequency power amplifier of the said a kind of fully integrated double frequency-band of claim 1, it is characterized in that said radio-frequency power amplifier adopts cascade differential amplifier structure, does load with the LC resonant network; Bias voltage V BThrough the first resistance (R 1), the second resistance (R 2) direct current biasing is provided, the first electric capacity (C for first MOS transistor (M1), second MOS transistor (M2) 1), the second electric capacity (C 2) be ac coupling capacitor, direct current signal is played at a distance from straight effect, guaranteeing simultaneously that radiofrequency signal is harmless passes through the first inductance (L 1), the second inductance (L 2), the 3rd electric capacity (C 3), the 4th electric capacity (C 4), the 5th MOS transistor (M 5), the 6th MOS transistor (M 6) and difference output plus terminal v Op, difference output negative terminal v OnThe node parasitic capacitance constitute the load resonant network, at useful signal frequency band interior resonance, load is provided for this amplifier; The 5th MOS transistor (M 5), the 6th MOS transistor (M 6) by Frequency Band Selection control signal V SControl, they play the effect of switch; As Frequency Band Selection control signal V SDuring for high level, the 5th MOS transistor (M 5) and the 6th MOS transistor (M 6) work in conducting state, with the second inductance (L 2) two ends be shorted to ground, at this moment the resonance frequency of load resonant network is:
ω 1 = 1 0.5 × L 1 × ( C 3,4 + C op )
Wherein, C 3,4Be the 3rd electric capacity (C 3) and the 4th electric capacity (C 4) capacitance, C OpBe the parasitic capacitance of each output node, at this moment radio-frequency power amplifier works in low-frequency range;
As Frequency Band Selection control signal V SDuring for low level, the 5th MOS transistor (M 5) and the 6th MOS transistor (M 6) work in cut-off state, the second inductance (L 2) and the 3rd electric capacity (C 3), the 4th electric capacity (C 4) after the series connection again with the first inductance (L 1) parallel connection, the second inductance (L 2) inductive load can partial offset the 3rd electric capacity (C 3) or the 4th electric capacity (C 4) capacitive load, make and the first inductance (L 1) capacitive load of parallel resonance significantly reduces, thereby improved the resonance frequency of load resonant network, at this moment radio-frequency power amplifier works in high band.
CN2010102725939A 2010-09-03 2010-09-03 Fully integrated dual-band configurable radio-frequency power amplifier CN101938256B (en)

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CN104967414A (en) * 2015-07-15 2015-10-07 宜确半导体(苏州)有限公司 Cascade radio-frequency power amplifier used for GSM/DCS
CN105281680B (en) * 2015-10-19 2019-03-26 江苏卓胜微电子股份有限公司 Low-noise amplifier and method for amplifying RF signal with switch

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Publication number Priority date Publication date Assignee Title
CN105337583A (en) * 2014-08-01 2016-02-17 博通集成电路(上海)有限公司 Power amplifier and power amplification method thereof
CN105337583B (en) * 2014-08-01 2018-10-12 博通集成电路(上海)股份有限公司 Power amplifier and its power-magnifying method

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