CN205017288U - Single pole single throw RF switch and RF switch is thrown to single -pole double throw RF switch and hilted broadsword that constitute more thereof - Google Patents
Single pole single throw RF switch and RF switch is thrown to single -pole double throw RF switch and hilted broadsword that constitute more thereof Download PDFInfo
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- CN205017288U CN205017288U CN201520593175.8U CN201520593175U CN205017288U CN 205017288 U CN205017288 U CN 205017288U CN 201520593175 U CN201520593175 U CN 201520593175U CN 205017288 U CN205017288 U CN 205017288U
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Abstract
The utility model discloses a single pole single throw RF switch, connect the first port of this single pole single throw RF switch and connect the the first signal input through first resistance through first electric capacity including its first end of semiconductor switch device, its second end meets the 2nd signal input part through second resistance, its third end is through fourth grounding, and the first diode through establishing ties, second diode and the 5th grounding, the 6th a resistance termination another termination power voltage between first diode and second diode, its fourth end connects this single pole single throw RF switch second port and meets signal input part through third resistance through second electric capacity, first inductance cross -over connection is in first electric capacity, semiconductor switch device and second electric capacity institute built -up circuit both ends. The utility model also discloses a RF switch is thrown to a single -pole double throw RF switch and a hilted broadsword more. The utility model discloses a single pole single throw RF switch has more high isolation, produces still less higher harmonic.
Description
Technical field
The utility model relates to integrated circuit fields, particularly relates to a kind of single-pole single-throw(SPST radio-frequency (RF) switch.The utility model also relates to a kind of single-pole double throw RF switch of being made up of described single-pole single-throw(SPST radio-frequency (RF) switch and radio-frequency (RF) switch thrown by a kind of hilted broadsword more.
Background technology
Along with the deep development communication equipment of modern communication technology is to miniaturized and low energy consumption development, this just requires that each assembly in communication equipment adopts Miniaturization Design, its size of controller, weight and thickness as far as possible, also will reduce component count and component power consumption simultaneously as far as possible.
Radiofrequency signal input/output module mainly can achieve a butt joint and receive the function such as the low noise amplification of radiofrequency signal and the power promotion of emitting radio frequency signal, it is part indispensable in radio frequency communication devices, wherein, single-pole single-throw switch (SPST) and single pole multiple throw are in order to realize the effects such as the signal traffic organising of radiofrequency signal.In current microwave communication system, power switch adopts several form usually: (1) adopts the PIN diode of discrete silicon materials, adopts the mode of hybrid circuit to realize, and its shortcoming is that volume is large, and operating frequency is narrow and control circuit complicated.(2) GaAs (GaAs) pseudomorphic high electron mobility transistor (pHEMT) single-chip switching is adopted, High Electron Mobility Transistor switch has the features such as volume is little, application bandwidth, but, be not easy to do single-chip with other radio circuit and integrate.(3) adopt the switch of MOS device, have price advantage, be suitable for doing on sheet integrated with other parts telecommunication circuit, shortcoming is withstand voltage and resistance to powerful limited in one's ability.In addition, existing power switch is also badly in need of overcoming the shortcomings such as insertion loss is large, isolation is undesirable, input and output standing-wave ratio large and the switching response time is long, along with day by day harsh to QoS requirement of the development of modern communication technology and people, traditional power switch can not meet the demand of actual use.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of compared with existing single-pole single-throw(SPST radio-frequency (RF) switch, provides more high-isolation, the better linearity, produces the single-pole single-throw(SPST radio-frequency (RF) switch of less high order harmonic component.
Another technical problem to be solved in the utility model is to provide that a kind of to have processing in the transmission mode compared with prior art of described single-pole single-throw(SPST radio-frequency (RF) switch higher by power, keeps the single-pole double throw RF switch of good linear properties simultaneously; And radio-frequency (RF) switch thrown by a kind of hilted broadsword with described single-pole double throw RF switch more.
For solving the problems of the technologies described above the first single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, comprising:
Semiconductor switch device T, its first end connects this single-pole single-throw(SPST radio-frequency (RF) switch first port P1 by the first electric capacity C1 and connects the first state control signal input S1 by the first resistance R1, its second end connects the second state control signal input S2 by the second resistance R2, its the 3rd end is by the 4th resistance R4 ground connection, and the first diode D1 by connecting, second diode D2 and the 5th resistance R5 ground connection, its the 4th end connects this single-pole single-throw(SPST radio-frequency (RF) switch second port P2 by the second electric capacity C2 and connects third state control signal input S3 by the 3rd resistance R3,
Wherein, the 6th resistance R6 one end is connected between the first diode D1 and the second diode D2, another termination supply voltage of the 6th resistance R6 VDD, and the first diode D1 negative pole connects the second diode (D2) negative pole;
First inductance L 1 be connected across the first electric capacity C1, semiconductor switch device T and the second electric capacity C2 form the two ends of series circuit.
The second single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, on the basis of the first single-pole single-throw(SPST radio-frequency (RF) switch, also comprises two inductance L 2 being connected across semiconductor switch device T first end and the second end; Namely second inductance L 2 one end is connected across between the first electric capacity C1 and semiconductor switch device T, and second inductance L 2 other end is connected across between semiconductor switch device T and the second electric capacity C2.
Wherein, during the work of the second single-pole single-throw(SPST radio-frequency (RF) switch, the first inductance L 1 participates in parallel resonance when this radio-frequency (RF) switch off state, and the second inductance L 2 participates in impedance transformation when this radio-frequency (RF) switch conducting state.
Wherein, described semiconductor switch device T is: PMOS, NMOS, HEMT or LDMOS.For NMOS, first end to be source electrode also can be drain electrode, the second end is grid, and the 3rd end is substrate, and the 4th end is that to drain also can be source electrode.
The single-pole double throw RF switch that the utility model provides, comprising:
One launcher arm, its first end connects the antenna end P4 of this single-pole double throw RF switch, and its second end connects the transmitting terminal P5 of this single-pole double throw RF switch;
One receptor arm, its first end connects the receiving terminal P3 of this single-pole double throw RF switch, and its second end connects the antenna end P4 of this single-pole double throw RF switch;
Described launcher arm comprises: the first single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, and this single-pole single-throw(SPST radio-frequency (RF) switch first port P1 is as the first end of this launcher arm, and this single-pole single-throw(SPST radio-frequency (RF) switch second port P2 is as the second end of this launcher arm;
Described receptor arm comprises: the second single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, this single-pole single-throw(SPST radio-frequency (RF) switch first port P1 connects low noise amplifier B by the 3rd electric capacity C3, the output of low noise amplifier B is as the first end of receptor arm, and this single-pole single-throw(SPST radio-frequency (RF) switch second port P2 is as the second end of receptor arm;
Wherein, there is between 3rd electric capacity C3 of receptor arm and single-pole single-throw(SPST radio-frequency (RF) switch ESD device access point E; second end of launcher arm has ESD device access point E; the antenna end P4 of this single-pole double throw RF switch has ESD device access point E, and above-mentioned each ESD device access point E is wherein connected with ESD protective device in arbitrary place.
Wherein, described ESD protective device is ESD diode, ESD triode or grounded inductor.
The described single-pole double throw RF switch of further optimization, also comprises paralleling switch SW, and paralleling switch SW one end is connected between receptor arm low noise amplifier B and the 3rd electric capacity C3, other end ground connection.The useful semiconductors switching device that paralleling switch SW realizes is: PMOS, NMOS, HEMT or LDMOS.
Radio-frequency (RF) switch thrown by the hilted broadsword that the utility model provides more, comprising:
At least two described receptor arm and a described launcher arm;
The first end of each receptor arm connects the receiving terminal P3 that radio-frequency (RF) switch thrown by this hilted broadsword more, and the second end of each receptor arm connects the antenna end P4 that radio-frequency (RF) switch thrown by this hilted broadsword more;
The first end of each launcher arm connects the antenna end P4 that radio-frequency (RF) switch thrown by this hilted broadsword more, and the second end of each launcher arm connects the transmitting terminal P5 that radio-frequency (RF) switch thrown by this hilted broadsword more.
Wherein, there is between 3rd electric capacity C3 of arbitrary receptor arm and single-pole single-throw(SPST radio-frequency (RF) switch ESD device access point E; second end of arbitrary launcher arm has ESD device access point E; the antenna end P4 that radio-frequency (RF) switch thrown by this hilted broadsword more has ESD device access point E, and above-mentioned each ESD device access point E is wherein connected with ESD protective device in arbitrary place.
Wherein, described ESD protective device is ESD diode, ESD triode or grounded inductor.
Wherein, each receptor arm also comprises paralleling switch SW, and paralleling switch SW one end is connected between low noise amplifier B and the 3rd electric capacity C3, and other end ground connection, paralleling switch SW is: PMOS, NMOS, HEMT or LDMOS.
The single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, the first port P1 and the second port P2 is the input and output port of switch, and semiconductor switch device T, as switching tube, controls the operating state of radio-frequency (RF) switch.First electric capacity C1 and the second electric capacity C2 is the coupling capacitance participating in parallel resonance when reiving/transmitting state.First inductance L 1 is the inductance participating in parallel resonance when radio-frequency (RF) switch off state, and it is connected across the two ends of two coupling capacitances and switching tube series circuit.Second inductance L 2 is the inductance participating in impedance transformation when radio-frequency (RF) switch conducting state, and it is connected across the two ends of switching tube.R1, R2 and R3 are the biasing resistors of switching tube, control operating state by logical signal, and radio frequency signal is isolated simultaneously; R4, R5 and R6 provide transistor substrate correct being biased.
Utility model structure working principle: when SW1EN is set to high level, SW1ENB is set to low level, switch transistor T turns off, and presents less shutoff electric capacity Coff.Second inductance L 2 and Coff parallel connection, according to the value of different situations, be rendered as different reactance value in working frequency range.Their again with the first inductance L 1 are in parallel, can play the regulating action increasing or reduce total inductance value.Now single-pole single-throw(SPST radio-frequency (RF) switch is in conducting state, and equivalent electric circuit as shown in Figure 3.
When SW1EN is set to low level, SW1ENB is set to high level, switch transistor T conducting, presents very little conducting resistance Ron, by the second inductance L 2 short circuit, makes it inoperative under current state.Coupling capacitance first electric capacity C1 and the second electric capacity C2 short circuit also become and are connected in series by the switch transistor T of simultaneously conducting, and they and inductance first inductance L 1 form antiresonant circuit, make to be isolated by high impedance between port P1 and P2.Single-pole single-throw(SPST radio-frequency (RF) switch is in the off state of high-isolation, and equivalent electric circuit as shown in Figure 4.
As can be seen here, in utility model structure, the operating state of semiconductor switch device T and control logic are contrary with the operating state of whole radio-frequency (RF) switch, and this is conducive to the design of transceiving radio frequency switch.
Utility model structure has had the higher degree of freedom in the first inductance L 1 and the second inductance L 2 value.Ordinary circumstance, choosing of the first inductance L 1 can tend to have better receptor arm isolation when emission state; The first inductance L 1 get fixed after, according to the impedance transformation inductance that low noise amplifier B needs, what adjust Fig. 3 by the second inductance L 2 presents impedance, can be divided into following three kinds of situations:
1) according to isolation needs, if the first inductance L 1 have selected larger value, and in the receiving mode, low noise amplifier B does not need so large inductance, so the resonance frequency of the second inductance L 2 with Coff can be designed higher than working frequency range, both is equivalent to a larger inductance for working frequency range.After the first inductance L 1 parallel connection, total effective inductance value just can be lowered.
2) if the inductance value of the first inductance L 1 chosen is less than the inductance value of the impedance matching needed for low noise amplifier B, so the second inductance L 2 can be designed lower than working frequency range with the resonance frequency of Coff, they are equivalent to an electric capacity in working frequency range.This equivalent capacity and the parallel connection of the first inductance L 1, be equivalent to and add total inductance.
3) if the inductance value of the inductance value of the first inductance L 1 chosen and the impedance matching needed for low noise amplifier B, second inductance L 2 can be designed on working frequency range with the resonance frequency of Coff, they are equivalent to an open circuit or larger leak resistance, only make the first inductance L 1 work in circuit.
Like this under various design situation, the single-pole single-throw(SPST radio-frequency (RF) switch of utility model structure is switch, is also a part for low noise amplifier B match circuit.First inductance L 1 and the second inductance L 2 can independently be chosen again, make radio-frequency (RF) switch work in the optimum state of receiving mode and emission mode respectively.
When coupling capacitance C1 in utility model structure and C2 is designed to switch transistor T conducting and the first inductance L 1 parallel resonance, therefore can uses the capacitance less than the capacitance of existing structure, therefore reduce chip usable floor area further.
Single-pole single-throw(SPST radio-frequency (RF) switch of the present utility model is thrown the receptor arm of radio-frequency (RF) switch more as hilted broadsword, can be made up of (m >=2, n >=1) m receptor arm and n launcher arm.Throw in radio-frequency (RF) switch each transmitting and receiving arm due to hilted broadsword more and have the inductance across switching tube and coupling capacitance, therefore multiple spot short circuit is equivalent to for direct current and low frequency, and these points just separately separately in structure ESD need the place considered, as long as throw in the switch of radio-frequency (RF) switch the device having an ESD device access point placement with ESD function at hilted broadsword of the present utility model, then whole circuit has ESD safeguard function more.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail:
Fig. 1 is the structural representation of the first single-pole single-throw(SPST radio-frequency (RF) switch one embodiment of the utility model.
Fig. 2 is the structural representation of the utility model the second single-pole single-throw(SPST radio-frequency (RF) switch one embodiment.
Fig. 3 is semiconductor switch device T off state equivalent circuit diagram embodiment illustrated in fig. 2.
Fig. 4 is semiconductor switch device T conducting state equivalent circuit diagram embodiment illustrated in fig. 2.
Fig. 5 is the structural representation of the utility model single-pole double throw RF switch one embodiment.
Fig. 6 is the structural representation that radio-frequency (RF) switch one embodiment thrown by the utility model hilted broadsword more.
Embodiment
As shown in Figure 1, the first single-pole single-throw(SPST radio-frequency (RF) switch one embodiment that the utility model provides, comprising:
Semiconductor switch device T, its first end connects this single-pole single-throw(SPST radio-frequency (RF) switch first port P1 by the first electric capacity C1 and connects the first state control signal input S1 by the first resistance R1, its second end connects the second state control signal input S2 by the second resistance R2, its the 3rd end is by the 4th resistance R4 ground connection, and the first diode D1 by connecting, second diode D2 and the 5th resistance R5 ground connection, its the 4th end connects this single-pole single-throw(SPST radio-frequency (RF) switch second port P2 by the second electric capacity C2 and connects third state control signal input S3 by the 3rd resistance R3,
Wherein, the 6th resistance R6 one end is connected between the first diode D1 and the second diode D2, another termination supply voltage of the 6th resistance R6 VDD, and the first diode D1 negative pole connects the second diode D2 negative pole;
First inductance L 1 be connected across the first electric capacity C1, semiconductor switch device T and the second electric capacity C2 form the two ends of series circuit.
In the present embodiment, semiconductor switch device T is NMOS, and its first end is source electrode, and the second end is grid, and the 3rd end is substrate, and the 4th end is drain electrode.When adopting other conventional semiconductor switching devices, its first ~ four end adopts the conventional connection in this area.
As shown in Figure 2, the second single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, on the basis of the first single-pole single-throw(SPST radio-frequency (RF) switch, also comprises: the second inductance L 2 being connected across semiconductor switch device T first end and the second end; Namely second inductance L 2 one end is connected across between the first electric capacity C1 and semiconductor switch device T, and second inductance L 2 other end is connected across between semiconductor switch device T and the second electric capacity C2.
In the present embodiment, semiconductor switch device T is NMOS, and its first end is source electrode, and the second end is grid, and the 3rd end is substrate, and the 4th end is drain electrode.When adopting other conventional semiconductor switching devices, its first ~ four end adopts the conventional connection in this area.
As shown in Figure 5, single-pole double throw RF switch one embodiment that the utility model provides, comprising:
One launcher arm, its first end connects the antenna end P4 of this single-pole double throw RF switch, and its second end connects the transmitting terminal P5 of this single-pole double throw RF switch;
One receptor arm, its first end connects the receiving terminal P3 of this single-pole double throw RF switch, and its second end connects the antenna end P4 of this single-pole double throw RF switch;
Described launcher arm comprises: the first single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, and this single-pole single-throw(SPST radio-frequency (RF) switch first port P1 is as the first end of this launcher arm, and this single-pole single-throw(SPST radio-frequency (RF) switch second port P2 is as the second end of this launcher arm;
Described receptor arm comprises: the second single-pole single-throw(SPST radio-frequency (RF) switch that the utility model provides, this single-pole single-throw(SPST radio-frequency (RF) switch first port P1 connects low noise amplifier B by the 3rd electric capacity C3, the output of low noise amplifier B is as the first end of receptor arm, and this single-pole single-throw(SPST radio-frequency (RF) switch second port P2 is as the second end of receptor arm;
Wherein, there is between 3rd electric capacity C3 of receptor arm and single-pole single-throw(SPST radio-frequency (RF) switch ESD device access point E, second end of launcher arm has ESD device access point E, the antenna end P4 of this single-pole double throw RF switch has ESD device access point E, in above-mentioned each ESD device access point E, arbitrary place is connected with ESD protective device, and described ESD protective device is ESD diode, ESD triode or grounded inductor;
Accept arm and also comprise paralleling switch SW, paralleling switch SW one end is connected to other end ground connection between receptor arm low noise amplifier B and the 3rd electric capacity C3.The useful semiconductors switching device that paralleling switch SW realizes is: PMOS, NMOS, HEMT or LDMOS.
As shown in Figure 6, the utility model provides the hilted broadsword with single-pole single-throw(SPST radio-frequency (RF) switch described in above-mentioned any one to throw radio-frequency (RF) switch one embodiment more, comprising:
At least two described receptor arm and a described launcher arm;
The first end of each receptor arm connects the receiving terminal P3 that radio-frequency (RF) switch thrown by this hilted broadsword more, and the second end of each receptor arm connects the antenna end P4 that radio-frequency (RF) switch thrown by this hilted broadsword more;
The first end of each launcher arm connects the antenna end P4 that radio-frequency (RF) switch thrown by this hilted broadsword more, and the second end of each launcher arm connects the transmitting terminal P5 that radio-frequency (RF) switch thrown by this hilted broadsword more.
Wherein, there is between 3rd electric capacity C3 of arbitrary receptor arm and single-pole single-throw(SPST radio-frequency (RF) switch ESD device access point E, second end of arbitrary launcher arm has ESD device access point E, the antenna end P4 that radio-frequency (RF) switch thrown by this hilted broadsword more has ESD device access point E, in above-mentioned each ESD device access point E, arbitrary place is connected with ESD protective device, and described ESD protective device is ESD diode, ESD triode or grounded inductor;
Each receptor arm also comprises paralleling switch SW, and paralleling switch SW one end is connected between receptor arm low noise amplifier B and the 3rd electric capacity C3, other end ground connection.The useful semiconductors switching device that paralleling switch SW realizes is: PMOS, NMOS, HEMT or LDMOS.
Below through the specific embodiment and the embodiment the utility model has been described in detail, but these are not formed restriction of the present utility model.When not departing from the utility model principle, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection range of the present utility model.
Claims (12)
1. a single-pole single-throw(SPST radio-frequency (RF) switch, is characterized in that, comprising:
Semiconductor switch device (T), its first end connects this single-pole single-throw(SPST radio-frequency (RF) switch first port (P1) by the first electric capacity (C1) and connects the first state control signal input (S1) by the first resistance (R1), its second end connects the second state control signal input (S2) by the second resistance (R2), its the 3rd end is by the 4th resistance (R4) ground connection, and the first diode (D1) by connecting, second diode (D2) and the 5th resistance (R5) ground connection, its the 4th end connects this single-pole single-throw(SPST radio-frequency (RF) switch second port (P2) by the second electric capacity (C2) and connects third state control signal input (S3) by the 3rd resistance (R3),
Wherein, 6th resistance (R6) one end is connected between the first diode (D1) and the second diode (D2), another termination supply voltage (VDD) of 6th resistance (R6), the first diode (D1) negative pole connects the second diode (D2) negative pole;
First inductance (L1) is connected across the two ends of the first electric capacity (C1), semiconductor switch device (T) and the second electric capacity (C2) institute composition series circuit.
2. single-pole single-throw(SPST radio-frequency (RF) switch as claimed in claim 1, is characterized in that: also comprise the second inductance (L2) being connected across semiconductor switch device (T) first end and the second end.
3. single-pole single-throw(SPST radio-frequency (RF) switch as claimed in claim 2, it is characterized in that: the first inductance (L1) participates in resonance when this radio-frequency (RF) switch off state, the second inductance (L2) participates in impedance transformation when this radio-frequency (RF) switch conducting state.
4. single-pole single-throw(SPST radio-frequency (RF) switch as claimed in claim 1, is characterized in that: described semiconductor switch device (T) is: PMOS, NMOS, HEMT or LDMOS.
5. a single-pole double throw RF switch, is characterized in that, comprising:
One launcher arm, its first end connects the antenna end (P4) of this single-pole double throw RF switch, and its second end connects the transmitting terminal (P5) of this single-pole double throw RF switch;
One receptor arm, its first end connects the receiving terminal (P3) of this single-pole double throw RF switch, and its second end connects the antenna end (P4) of this single-pole double throw RF switch;
Described launcher arm comprises: single-pole single-throw(SPST radio-frequency (RF) switch according to claim 1, this single-pole single-throw(SPST radio-frequency (RF) switch first port (P1) is as the first end of this launcher arm, and this single-pole single-throw(SPST radio-frequency (RF) switch second port (P2) is as the second end of this launcher arm;
Described receptor arm comprises: single-pole single-throw(SPST radio-frequency (RF) switch according to claim 2, this single-pole single-throw(SPST radio-frequency (RF) switch first port (P1) connects low noise amplifier (B) by the 3rd electric capacity (C3), the output of low noise amplifier (B) is as the first end of receptor arm, and this single-pole single-throw(SPST radio-frequency (RF) switch second port (P2) is as the second end of receptor arm.
6. single-pole double throw RF switch as claimed in claim 5; it is characterized in that: between the 3rd electric capacity (C3) of receptor arm and the single-pole single-throw(SPST radio-frequency (RF) switch forming this receptor arm, there is ESD device access point (E); second end of launcher arm has ESD device access point (E); the antenna end (P4) of this single-pole double throw RF switch has ESD device access point (E), and in above-mentioned each ESD device access point (E), arbitrary place is connected with ESD protective device.
7. single-pole double throw RF switch as claimed in claim 6, is characterized in that: described ESD protective device is ESD diode, ESD triode or grounded inductor.
8. single-pole double throw RF switch as claimed in claim 6, it is characterized in that: receptor arm also comprises paralleling switch (SW), paralleling switch (SW) one end is connected between low noise amplifier (B) and the 3rd electric capacity (C3), other end ground connection, paralleling switch (SW) is: PMOS, NMOS, HEMT or LDMOS.
9. a radio-frequency (RF) switch thrown by hilted broadsword more, it is characterized in that, comprising:
Launcher arm described in receptor arm described at least two claims 5 and a claim 5;
The first end of each receptor arm connects the receiving terminal (P3) that radio-frequency (RF) switch thrown by this hilted broadsword more, and the second end of each receptor arm connects the antenna end (P4) that radio-frequency (RF) switch thrown by this hilted broadsword more;
The first end of each launcher arm connects the antenna end (P4) that radio-frequency (RF) switch thrown by this hilted broadsword more, and the second end of each launcher arm connects the transmitting terminal (P5) that radio-frequency (RF) switch thrown by this hilted broadsword more.
10. radio-frequency (RF) switch thrown by hilted broadsword as claimed in claim 9 more; it is characterized in that: between the 3rd electric capacity (C3) of arbitrary receptor arm and the single-pole single-throw(SPST radio-frequency (RF) switch forming this receptor arm, there is ESD device access point (E); second end of arbitrary launcher arm has ESD device access point (E); the antenna end (P4) that radio-frequency (RF) switch thrown by this hilted broadsword more has ESD device access point (E), and in above-mentioned each ESD device access point (E), arbitrary place is connected with ESD protective device.
Radio-frequency (RF) switch thrown by 11. hilted broadswords as claimed in claim 10 more, it is characterized in that: described ESD protective device is ESD diode, ESD triode or grounded inductor.
Radio-frequency (RF) switch thrown by 12. hilted broadswords as claimed in claim 10 more, it is characterized in that: each receptor arm also comprises paralleling switch (SW), paralleling switch (SW) one end is connected between low noise amplifier (B) and the 3rd electric capacity (C3), other end ground connection, paralleling switch (SW) is: PMOS, NMOS, HEMT or LDMOS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520593175.8U CN205017288U (en) | 2015-08-07 | 2015-08-07 | Single pole single throw RF switch and RF switch is thrown to single -pole double throw RF switch and hilted broadsword that constitute more thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520593175.8U CN205017288U (en) | 2015-08-07 | 2015-08-07 | Single pole single throw RF switch and RF switch is thrown to single -pole double throw RF switch and hilted broadsword that constitute more thereof |
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| CN205017288U true CN205017288U (en) | 2016-02-03 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105049015A (en) * | 2015-08-07 | 2015-11-11 | 康希通信科技（上海）有限公司 | Single-pole single-throw radio-frequency switch as well as single-pole double-throw radio-frequency switch and single-pole multi-throw radio-frequency switch both formed by use of single-pole single-throw radio-frequency switch |
| CN105049016A (en) * | 2015-08-07 | 2015-11-11 | 康希通信科技（上海）有限公司 | Single-pole single-throw radio-frequency switch, and single-pole double-throw radio-frequency switch and single-pole multi-throw radio-frequency switch both composed of single-pole single-throw radio-frequency switch |
| CN108233912A (en) * | 2016-12-13 | 2018-06-29 | 湖南格兰德芯微电子有限公司 | Double-pole double throw rf switch |
| CN110165344A (en) * | 2019-05-28 | 2019-08-23 | 西南应用磁学研究所 | Gyromagnetic filter resonant circuit structure |
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2015
- 2015-08-07 CN CN201520593175.8U patent/CN205017288U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105049015A (en) * | 2015-08-07 | 2015-11-11 | 康希通信科技（上海）有限公司 | Single-pole single-throw radio-frequency switch as well as single-pole double-throw radio-frequency switch and single-pole multi-throw radio-frequency switch both formed by use of single-pole single-throw radio-frequency switch |
| CN105049016A (en) * | 2015-08-07 | 2015-11-11 | 康希通信科技（上海）有限公司 | Single-pole single-throw radio-frequency switch, and single-pole double-throw radio-frequency switch and single-pole multi-throw radio-frequency switch both composed of single-pole single-throw radio-frequency switch |
| CN105049015B (en) * | 2015-08-07 | 2018-01-16 | 康希通信科技（上海）有限公司 | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more |
| CN105049016B (en) * | 2015-08-07 | 2018-02-13 | 康希通信科技（上海）有限公司 | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more |
| CN108233912A (en) * | 2016-12-13 | 2018-06-29 | 湖南格兰德芯微电子有限公司 | Double-pole double throw rf switch |
| CN108233912B (en) * | 2016-12-13 | 2021-07-06 | 格兰康希通信科技(上海)有限公司 | Double-pole double-throw radio frequency switch |
| CN110165344A (en) * | 2019-05-28 | 2019-08-23 | 西南应用磁学研究所 | Gyromagnetic filter resonant circuit structure |
| CN110165344B (en) * | 2019-05-28 | 2021-08-27 | 西南应用磁学研究所 | Resonant circuit structure of gyromagnetic filter |
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