CN108233912A - Double-pole double throw rf switch - Google Patents
Double-pole double throw rf switch Download PDFInfo
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- CN108233912A CN108233912A CN201611149947.4A CN201611149947A CN108233912A CN 108233912 A CN108233912 A CN 108233912A CN 201611149947 A CN201611149947 A CN 201611149947A CN 108233912 A CN108233912 A CN 108233912A
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- arm
- inductance
- radio
- switch
- double
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
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Abstract
A kind of double-pole double throw RF switch provided by the invention, including：First arm (A1) is connected between the first radio-frequency head (RF1) and first antenna end (ANT1), second arm (A2) is connected between first antenna end (ANT1) and the second radio-frequency head (RF2), third arm (A3) is connected between the second radio-frequency head (RF2) and the second antenna end (ANT2), 4th arm (A4) is connected between the second antenna end (ANT2) and the first radio-frequency head (RF1), first inductance (L1) and the second inductance (L2) are connected between first antenna end (ANT1) and the second antenna end (ANT2)；First~the 4th arm (A1~A4) structure is identical, and each arm includes：Two capacitances and a switching device, the switching device are connected between described two capacitances.The present invention has low insertion loss and high-isolation performance and smaller device volume compared with prior art.
Description
Technical field
The present invention relates to integrated circuit fields, more particularly to a kind of double-pole double throw RF switch.
Background technology
Developing with the deep development communication equipment of modern communication technology to miniaturization and low energy consumption, this requires logical
Believe each component in equipment using Miniaturization Design, as possible control device size and thickness, while also to reduce group to the greatest extent
Number of packages amount and component power consumption.
The low noise amplification and transmitting radio frequency letter to receiving radiofrequency signal mainly can be achieved in radiofrequency signal input/output module
Number the functions such as power amplification, be component part indispensable in radio frequency communication devices, wherein, double-point double-throw switch is to reality
The effects that signal traffic organising of existing radiofrequency signal.In current microwave communication system, several shapes of power switch generally use
Formula：(1) it using the PIN diode of discrete silicon materials, is realized by the way of hybrid circuit, the drawback is that volume is big, work
Frequency is narrow and control circuit is complicated；(2) using GaAs GaAs high electron mobility transistor pHEMT single-chip switchings, high electronics
Mobility transistor switch have the characteristics that it is small, using bandwidth, still, be not easy to and others radio circuits do single
Piece is integrated；(3) using the switch of MOS device, there is price advantage, integrated suitable for doing on piece with other parts telecommunication circuit, shortcoming
It is that pressure resistance and resistance to powerful ability are limited.In addition to this, existing power switch is also badly in need of overcoming that insertion loss is big, isolation
The shortcomings of undesirable, input and output standing-wave ratio is greatly and the switch response time is long, continuous development and people with modern communication technology
It is to QoS requirement increasingly harsh, traditional double-point double-throw switch has been unable to meet the demand of actual use.
Fig. 1 is a kind of existing double-pole double throw RF switch structure.This structure can control radiofrequency signal, make it can be
Any switching laws between four ports of two radio-frequency head RF1 and RF2 and two antenna end ANT1 and ANT2 composition.However, due to
The shortcomings that any access has to pass through two switching devices, this structure is that insertion loss is larger, and between each port every
Not ideal enough from spending, device relevance grade is limited.
Invention content
There is low insertion loss and high isolation compared with prior art the technical problem to be solved in the present invention is to provide a kind of
Spend the double-point double-throw switch of performance and smaller device volume.
In order to solve the above technical problems, a kind of double-pole double throw RF switch provided by the invention, including：First radio-frequency head
RF1, the second radio-frequency head RF2, the first~the 4th arm A1~A4, first~third inductance L1~L3 and the first~the second antenna end
ANT1、ANT2；
First arm A1 is connected between the first radio-frequency head RF1 and first antenna end ANT1, and the second arm A2 is connected to first day
Between line end ANT1 and the second radio-frequency head RF2, third arm A3 is connected between the second radio-frequency head RF2 and the second antenna end ANT2,
4th arm A4 is connected between the second antenna end ANT2 and the first radio-frequency head RF1, and the first inductance L1 and the second inductance L2 are connected on
Between first antenna end ANT1 and the second antenna end ANT2；
Wherein, the first~the 4th arm A1~A4 structures are identical, and each arm includes：Two capacitances and a derailing switch
Part, the switching device are connected between described two capacitances.When switch device conductive, corresponding arm conducting；Work as derailing switch
When part disconnects, corresponding arm disconnects.
It is further improved, further includes third inductance L3 and the 9th capacitance C9, third inductance L3 one end is connected to the first inductance
Between L1 and the second inductance L2, other end inner ground；9th capacitance C9 is in parallel with third inductance L3.
It is further improved, switching device S1~S4 is PMOS, NMOS, HEMT or LDMOS.
Wherein, when radiofrequency signal passes through between the first radio-frequency head RF1 and first antenna end ANT1, the first arm A1 and third
Arm A3 is connected, and the second arm A2 and the 4th arm A4 are disconnected.
Wherein, when radiofrequency signal passes through between the second radio-frequency head RF2 and first antenna end ANT1, the second arm A2 and the 4th
Arm A4 is connected, and the first arm A1 and third arm A3 are disconnected.
Wherein, when radiofrequency signal passes through between the second radio-frequency head RF2 and the second antenna end ANT2, the first arm A1 and third
Arm A3 is connected, and the second arm A2 and the 4th arm A4 are disconnected.
Wherein, when radiofrequency signal passes through between the first radio-frequency head RF1 and the second antenna end ANT2, the second arm A2 and the 4th
Arm A4 is connected, and the first arm A1 and third arm A3 are disconnected.
It is further improved, all capacitor's capacities for forming the first~the 4th arm A1~A4 are identical, are denoted as C；First inductance L1
It is identical with the inductance value of the second inductance L2, it is denoted as L；The frequency that double-pole double throw RF switch uses is denoted as f；And C and 2L can be on f
Resonance, i.e.,
The inductance value L' of the capacitance C ' and third inductance L3 of 9th capacitance C9 can on f resonance, i.e.,
The operation principle of double-pole double throw RF switch provided by the invention is illustrated below.
Be shown in Fig. 3 when radiofrequency signal between the first radio-frequency head RF1 and first antenna end ANT1 by when equivalent electricity
Road for simplifying the analysis, has ignored the 9th capacitance C9 and third inductance L3.At this point, the first arm A1 and third arm A3 conductings, second
Arm A2 and the 4th arm A4 are disconnected, and first and third switching device S1, S3 conducting, it is reduced to short circuit, second and the 4th switching device
S2, S4 are disconnected, and are reduced to a capacitance, are denoted as Coff.
Be shown in Fig. 4 it is shown in Fig. 3 on the basis of the equivalent circuit that is further simplified, it is assumed here that C1~C8 in Fig. 3 is
Sufficiently large, so that in the working frequency used in double-pole double throw RF switch, they are considered ac short circuit (AC
short).In such cases, the first arm A1 and third arm A3 becomes short circuit branch, and the second arm A2 and the 4th arm A4 are equivalent to
Coff.First radio-frequency head RF1 and first antenna end ANT1 short circuits, the second antenna end ANT2 and the second radio-frequency head RF2 short circuits, they
Between connection be equivalent to two in parallel Coff and equivalent inductance values be L1+L2 inductance, they can be in double-pole
Generate parallel resonance in the working frequency that double-throw RF switch uses, with this generate between RF1/ANT1 and RF2/ANT2 it is high every
From degree, and provide the low insertion loss between RF1 to ANT1.
When radiofrequency signal is transmitted between other any two ports, double-pole double throw radio frequency provided by the invention is opened
It is similar to close operation principle.Compared to existing double-pole double throw RF switch, structure provided by the invention, not only the port of conducting it
Between insertion loss it is relatively low (only pass through a switching device), and generate between the port of disconnection higher isolation (due to
Parallel resonance).
Third inductance L3 shown in Fig. 2 is used to ensure that first antenna end ANT1 and the second antenna end ANT2 have over the ground simultaneously
Discharge path, this plays rather important role in the ESD performances of radio frequency chip product.However, to ensure the introducing of L3 not
The series circuit configuration of L1 and L2 is influenced, while introduces the 9th capacitance C9.When the 9th capacitance C9 and third inductance L3 are in double-pole
Generate parallel resonance in the working frequency that double-throw RF switch uses, the network of the 9th capacitance C9 and third inductance L3 compositions is the
A high impedance is generated between one inductance L1 and the first inductance L2, such radiofrequency signal can't be because of the 9th capacitance C9 and third
The introducing of inductance L3, and impact, it thus can ensure that the ESD of first antenna end ANT1 and the second antenna end ANT2
Can, while the low insertion loss of double-pole double throw RF switch and high-isolation performance can be maintained again.
Description of the drawings
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings：
Fig. 1 is a kind of structure diagram of existing double-pole double throw RF switch.
Fig. 2 is first embodiment of the present invention structure diagram.
Fig. 3 is the simplified electrical circuit diagram of first embodiment of the present invention structure.
Fig. 4 is the equivalent circuit diagram of first embodiment of the present invention structure.
Reference sign
RF1, RF2 are the first~the second radio-frequency heads
ANT1, ANT2 are the first~the second antenna ends
A1~A4 is the first~the 4th arm
L1~L3 first~third inductance
C1~C9 is the first~the 9th capacitance
S1~S4 is the first~the 4th switching device
Specific embodiment
As shown in Fig. 2, one embodiment of double-pole double throw RF switch of the present invention, including：First radio-frequency head RF1, the second radio frequency
Hold RF2, the first~the 4th arm A1~A4, first~third inductance L1~L3 and the first~the second antenna end ANT1~ANT2；
First arm A1 is connected between the first radio-frequency head RF1 and first antenna end ANT1, and the second arm A2 is connected to first day
Between line end ANT1 and the second radio-frequency head RF2, third arm A3 is connected between the second radio-frequency head RF2 and the second antenna end ANT2,
4th arm A4 is connected between the second antenna end ANT2 and the first radio-frequency head RF1, and the first inductance L1 and the second inductance L2 are connected on
Between first antenna end ANT1 and the second antenna end ANT2；
Wherein, the first~the 4th arm A1~A4 structures are identical, and each arm includes：Two capacitances and a derailing switch
Part, the switching device are connected between described two capacitances.When switch device conductive, corresponding arm conducting；Work as derailing switch
When part disconnects, corresponding arm disconnects.
First arm includes：First capacitance C1, the second capacitance C2 and first switch device S1, first switch device S1 are connected on
Between first capacitance C1 and the second capacitance C2.
Second arm includes：Third capacitance C3, the 4th capacitance C4 and second switch device S2, second switch device S2 are connected on
Between third capacitance C3 and the 4th capacitance C4.
Third arm includes：5th capacitance C5, the 6th capacitance C6 and third switching device S3, third switching device S3 are connected on
Between 5th capacitance C5 and the 6th capacitance C6.
4th arm includes：7th capacitance C7, the 8th capacitance C8 and the 4th switching device S4, the 4th switching device S4 are connected on
Between 7th capacitance C7 and the 8th capacitance C8.
It is further improved, further includes third inductance L3 and the 9th capacitance C9, third inductance L3 one end is connected to the first inductance
Between L1 and the second inductance L2, other end inner ground；9th capacitance C9 is in parallel with third inductance L3.
It is further improved, switching device S1~S4 is PMOS, NMOS, HEMT or LDMOS.
Wherein, when radiofrequency signal passes through between the first radio-frequency head RF1 and first antenna end ANT1, the first arm A1 and third
Arm A3 is connected, and the second arm A2 and the 4th arm A4 are disconnected.
Wherein, when radiofrequency signal passes through between the second radio-frequency head RF2 and first antenna end ANT1, the second arm A2 and the 4th
Arm A4 is connected, and the first arm A1 and third arm A3 are disconnected.
Wherein, when radiofrequency signal passes through between the second radio-frequency head RF2 and the second antenna end ANT2, the first arm A1 and third
Arm A3 is connected, and the second arm A2 and the 4th arm A4 are disconnected.
Wherein, when radiofrequency signal passes through between the first radio-frequency head RF1 and the second antenna end ANT2, the second arm A2 and the 4th
Arm A4 is connected, and the first arm A1 and third arm A3 are disconnected.
It is further improved, all capacitor's capacities for forming the first~the 4th arm A1~A4 are identical, are denoted as C；First inductance L1
It is identical with the inductance value of the second inductance L2, it is denoted as L；The frequency that double-pole double throw RF switch uses is denoted as f；And C and 2L can be on f
Resonance, i.e.,
The inductance value L' of the capacitance C ' and third inductance L3 of 9th capacitance C9 can on f resonance, i.e.,
The present invention is described in detail above by specific embodiment and embodiment, but these are not composition pair
The limitation of the present invention.Without departing from the principles of the present invention, those skilled in the art can also make many deformations and change
Into these also should be regarded as protection scope of the present invention.
Claims (9)
1. a kind of double-pole double throw RF switch, which is characterized in that including：First radio-frequency head (RF1), the second radio-frequency head (RF2),
One~the 4th arm (A1~A4), first~third inductance (L1~L3) and the first~the second antenna end (ANT1, ANT2)；
First arm (A1) is connected between the first radio-frequency head (RF1) and first antenna end (ANT1), and the second arm (A2) is connected to
Between one antenna end (ANT1) and the second radio-frequency head (RF2), third arm (A3) is connected to the second radio-frequency head (RF2) and the second antenna
Between holding (ANT2), the 4th arm (A4) is connected between the second antenna end (ANT2) and the first radio-frequency head (RF1), the first inductance
(L1) it is connected between first antenna end (ANT1) and the second antenna end (ANT2) with the second inductance (L2)；
Wherein, the first~the 4th arm (A1~A4) structure is identical, and each arm includes：Two capacitances and a switching device,
The switching device is connected between described two capacitances.
2. double-pole double throw RF switch as described in claim 1, it is characterised in that：Further include third inductance (L3) and the 9th capacitance
(C9), third inductance (L3) one end is connected between the first inductance (L1) and the second inductance (L2), other end inner ground；9th
Capacitance (C9) is in parallel with third inductance (L3).
3. double-pole double throw RF switch as described in claim 1, it is characterised in that：Switching device (S1~S4) be PMOS, NMOS,
HEMT or LDMOS.
4. double-pole double throw RF switch as described in claim 1, it is characterised in that：When radiofrequency signal is at the first radio-frequency head (RF1)
Pass through between first antenna end (ANT1), the first arm (A1) and third arm (A3) conducting, the second arm (A2) and the 4th arm (A4)
It disconnects.
5. double-pole double throw RF switch as described in claim 1, it is characterised in that：When radiofrequency signal is at the second radio-frequency head (RF2)
Pass through between first antenna end (ANT1), the second arm (A2) and the conducting of the 4th arm (A4), the first arm (A1) and third arm (A3)
It disconnects.
6. double-pole double throw RF switch as described in claim 1, it is characterised in that：When radiofrequency signal is at the second radio-frequency head (RF2)
Pass through between the second antenna end (ANT2), the first arm (A1) and third arm (A3) conducting, the second arm (A2) and the 4th arm (A4)
It disconnects.
7. double-pole double throw RF switch as described in claim 1, it is characterised in that：When radiofrequency signal is at the first radio-frequency head (RF1)
Pass through between the second antenna end (ANT2), the second arm (A2) and the conducting of the 4th arm (A4), the first arm (A1) and third arm (A3)
It disconnects.
8. double-pole double throw RF switch as described in claim 1, it is characterised in that：Form the institute of the first~the 4th arm (A1~A4)
There is capacitor's capacity identical, be denoted as C；First inductance (L1) is identical with the inductance value of the second inductance (L2), is denoted as L；Double-pole double throw is penetrated
Frequently it switchs the frequency used and is denoted as f；And C and 2L can on f resonance, i.e.,
9. double-pole double throw RF switch as described in claim 1, it is characterised in that：The frequency note that double-pole double throw RF switch uses
For f, the capacitance C ' of the 9th capacitance (C9) and the inductance value L' of third inductance (L3) can on f resonance, i.e.,
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611149947.4A CN108233912B (en) | 2016-12-13 | 2016-12-13 | Double-pole double-throw radio frequency switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611149947.4A CN108233912B (en) | 2016-12-13 | 2016-12-13 | Double-pole double-throw radio frequency switch |
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| Publication Number | Publication Date |
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| CN108233912A true CN108233912A (en) | 2018-06-29 |
| CN108233912B CN108233912B (en) | 2021-07-06 |
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| CN201611149947.4A Active CN108233912B (en) | 2016-12-13 | 2016-12-13 | Double-pole double-throw radio frequency switch |
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Cited By (2)
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|---|---|---|---|---|
| CN111181539A (en) * | 2020-01-16 | 2020-05-19 | 上海闻泰电子科技有限公司 | Double-pole double-throw radio frequency switch, production test method thereof and mobile communication terminal |
| CN111277257A (en) * | 2020-02-18 | 2020-06-12 | 江苏集萃智能集成电路设计技术研究所有限公司 | Radio frequency switch with ESD protection |
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|---|---|---|---|---|
| CN111181539A (en) * | 2020-01-16 | 2020-05-19 | 上海闻泰电子科技有限公司 | Double-pole double-throw radio frequency switch, production test method thereof and mobile communication terminal |
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| CN111277257A (en) * | 2020-02-18 | 2020-06-12 | 江苏集萃智能集成电路设计技术研究所有限公司 | Radio frequency switch with ESD protection |
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|---|---|
| CN108233912B (en) | 2021-07-06 |
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Address after: 200000 room 714, building 3, No. 111, Xiangke Road, pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Grankangxi communication technology (Shanghai) Co.,Ltd. Address before: Room 6109, 1st floor, building 6, Lane 60, Naxian Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee before: Gran Kangxi communication technology (Shanghai) Co.,Ltd. |