CN109194291A - A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality - Google Patents
A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality Download PDFInfo
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- CN109194291A CN109194291A CN201811039176.2A CN201811039176A CN109194291A CN 109194291 A CN109194291 A CN 109194291A CN 201811039176 A CN201811039176 A CN 201811039176A CN 109194291 A CN109194291 A CN 109194291A
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- noise amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
Abstract
A kind of one chip low-noise amplifier the present invention relates to high-gain High Linear with bypass functionality, including a low-noise amplifier, tandem tap, paralleling switch, two control circuits, wherein tandem tap input terminal is serially connected in low-noise amplifier output end, output end is in parallel with paralleling switch output end, paralleling switch input terminal is in parallel with low-noise amplifier input terminal, one control circuit is concatenated with low-noise amplifier, tandem tap, another control circuit is concatenated with low-noise amplifier, paralleling switch.Advantage: 1) using the current multiplexing structure of improvement, higher gain is obtained in working frequency range using lesser operating current and flatness guarantees device compared with low-noise factor simultaneously.2) GaAs E/D pHEMT technique is used, device integration and Module Reliability are improved.3) operating mode of low-noise amplifier is controlled in common source pipe source series control transistor, low-noise amplifier is opened when reducing parasitic capacitance, while preventing big radiofrequency signal from injecting.
Description
Technical field
The present invention is a kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality, belongs to wireless communication skill
Art field.
Background technique
Mobile communication technology develops rapidly now, and as 5G communicates all standard gradual perfection, 5G communication era is also flying
Speed is come up to us, requires also to become higher and higher to the promotion of mobile communication rate.Certain crowded type places of large size are such as
Gymnasium, megastore, airport etc., since its construction area is big, building is strong to the shielding of signal, localized network signal is close
Collection will lead to the cause specifics such as signal jam, improve indoor mobile communication environment frequently with indoor distributed system, as to biography
The supplement of system base station architecture, to guarantee that indoor each region has good signal to cover.
Indoor distributed system is broadly divided into passive compartment system and active two class of compartment system, field biggish for area
Institute, frequently with active compartment system.Low-noise amplifier built in active compartment system, for thermal compensation signal in transmission process
Loss.When its area of coverage intra domain user is less, when signal is weaker, amplifier is started to work, and signal is amplified, and obtains user good
Good signal；When its area of coverage intra domain user is more, when signal strength is larger, to prevent signal jam, amplifier shutdown, letter
Number from other channels bypass, to guarantee the mobile communication equipment normal use of user.Since mobile communication application is to signal quality
Particular/special requirement, therefore to the amplifier also proposed low noise, High Linear, high-gain, low-power consumption, multi-operation mode, it is low at
The particular/special requirements such as this.
Summary of the invention
Proposed by the present invention is a kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality, and purpose exists
In for the prior art require low-noise amplifier accomplish low noise, High Linear, high-gain, low-power consumption, multi-operation mode, it is low at
The particular/special requirements such as this, propose one kind can be completed at the same time radiofrequency signal amplification, radiofrequency signal bypass, radiofrequency signal shutdown etc. it is more
The high-gain High Linear of kind function is with the one chip low-noise amplifier of bypass functionality.
Technical solution of the invention: a kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality,
Including a low-noise amplifier, tandem tap, paralleling switch, A control circuit, B control circuit, wherein tandem tap input terminal
It is serially connected in low-noise amplifier output end, output end is in parallel with 3 output end of paralleling switch, and paralleling switch input terminal is put with low noise
Big device input terminal is in parallel, and A control circuit and low-noise amplifier, tandem tap are connected in series, B control circuit and low noise amplification
Device, paralleling switch are connected in series.
Beneficial effects of the present invention:
1) the current multiplexing structure for having used improvement, using lesser operating current in work frequency when low-noise amplifier being made to work
Higher gain is obtained in section and flatness guarantees the lower noise coefficient of device simultaneously.
2) GaAs E/D pHEMT technique is used, by low-noise amplifier, tandem tap, paralleling switch, control circuit etc.
Unit is fully integrated to be realized in single IC chip, is improved the integrated level of device, is improved low noise amplifier module indirectly
Reliability, provide more conveniences for the use of user
3) operating mode of low-noise amplifier is controlled in common source pipe source series control transistor, on the one hand reduces and closes
The parasitic capacitance of amplifier under disconnected state, when on the other hand preventing big radiofrequency signal from injecting, low-noise amplifier is opened.
Detailed description of the invention
Attached drawing 1 is the classical low-noise amplifier block diagram with bypass functionality.
Attached drawing 2 is classical cascade amplifier schematic diagram.
Attached drawing 3 is classical common source and common grid amplifier schematic diagram.
Attached drawing 4 is one chip low-noise amplifier block diagram of the high-gain High Linear with bypass functionality.
Attached drawing 5 is the control circuit block diagram of one chip low-noise amplifier of the high-gain High Linear with bypass functionality.
Attached drawing 6 is low-noise amplifier access schematic diagram.
Attached drawing 7 is paralleling switch access schematic diagram.
Attached drawing 8 is S21 and OIP3 simulation curve of the low-noise amplifier under amplification and bypass condition.
1 it is low-noise amplifier in figure, 2 be tandem tap, 3 is that paralleling switch, 4 and 5 are control circuits, 6 are voltage ratios
It is source follower compared with device, 7,8 is phase inverter.Q1, Q2, Q3 are transistors；L1 is inductance；C1, C2, C3 are capacitors.
Specific embodiment
A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality, including a low-noise amplifier,
Tandem tap, paralleling switch, A control circuit, B control circuit, wherein it is defeated to be serially connected in low-noise amplifier for tandem tap input terminal
Outlet, output end is in parallel with 3 output end of paralleling switch, and paralleling switch input terminal is in parallel with low-noise amplifier input terminal, A control
Circuit and low-noise amplifier, tandem tap are connected in series, and B control circuit and low-noise amplifier, paralleling switch are connected in series.
The A control circuit, B control circuit structure are identical, including voltage comparator, source follower and multiple paraphase
Device, voltage comparator, source follower and several phase inverters are connected in series, voltage comparator by input voltage and reference voltage into
Row compare, then export high potential higher than reference voltage, then export low potential lower than reference voltage, source follower to buffer,
Voltage comparator driving capability is improved to export different control voltage finally by multiple phase inverter paraphase and control circuit
System.
The low-noise amplifier uses current multiplexing structure, including two radio frequency paths, and one includes Q1 transistor-
L1 inductance-Q2 transistor, another includes Q1 transistor-C1 capacitor-Q2 transistor；Wherein L1 inductance is one less than 2nH
Inductance, to low frequency signal short circuit to high-frequency signal open a way, C1 capacitor be one be less than 2pF capacitor, to low frequency signal short circuit
It opens a way to high-frequency signal, C2 capacitor is the capacitor for being greater than 3pF, plays impedance matching to 2GHz signal below, right
The signal of 2GHz or more is equivalent to a short-circuit component；2GHz signal below is led to by Q1 transistor-L1 inductance-Q2 transistor
It crosses, the signal of 2GHz or more is passed through by Q1 transistor-C1 capacitor-Q2 transistor, has amplifier in bandwidth of operation higher
Gain；The gate-source capacitance of C1 capacitance compensation transistor Q2 changes, and improves the linearity of low-noise amplifier.
The one chip low-noise amplifier opens low-noise amplifier, series connection in using GaAs E/D pHEMT technique
The units such as pass, paralleling switch, control circuit are fully integrated to be realized in single IC chip, makes to realize letter within the scope of applying frequency
Number Linear Amplifer.
Insertion loss is small when the tandem tap is opened, and when shutdown provides isolation；It should when low-noise amplifier work
Tandem tap is opened, and guarantees that low-noise amplifier circuit works normally, radio-frequency input signals is amplified；When low-noise amplifier not
Tandem tap turns off when work, improves the isolation in low-noise amplifier circuit.
The paralleling switch uses series and parallel structure, the radiofrequency signal of low-noise amplifier input terminal is directly other when unlatching
Road to device output end, while improve switch open when input tolerance power；Isolation is provided when shutdown, guarantees low noise
Amplifier circuit works normally.
Further explanation of the technical solution of the present invention with reference to the accompanying drawing
As shown in Fig. 1, the classical low-noise amplifier with bypass functionality, by a low-noise amplifier, a paralleling switch
And control circuit is constituted, low-noise amplifier generallys use different process with paralleling switch and is made, by control circuit respectively to low
Noise amplifier is controlled with paralleling switch, to switch the operating mode of low-noise amplifier.The low noise of this structure is put
What big device and switch were usually designed respectively, amplifier is not taken into account that usually and switchs the influence between different conditions.It is putting
When big device closed-circuit working, switch is in an off state, is in high-impedance state, will not usually have an impact to low-noise amplifier, but locates
When bypass condition, since radio frequency amplifier generallys use cascade or cascode structure realization, respectively as shown in Figures 2 and 3,
When the injection of big signal, since first order amplifying transistor GS knot can be connected, it will appear nonlinear component, make bypass condition
The decline of lower linear degree, while other performances such as signal path insertion loss and standing wave can also deteriorate under bypass condition.
As shown in Fig. 4, one chip low-noise amplifier of the broadband High Linear with bypass functionality includes low-noise amplifier
1, tandem tap 2, paralleling switch 3, control circuit 4 and 5.
For low-noise amplifier 1 for amplifying radiofrequency signal, input terminal is in parallel with paralleling switch 3 for receiving radiofrequency signal,
Output end connects in series switch 2.
2 input terminal of tandem tap is serially connected in the output end of low-noise amplifier 1, and output end is used to emit radiofrequency signal, with
3 output end of paralleling switch is in parallel, to improve the isolation under amplifier chain off state, and reduces amplifier out
Influence of the parasitic parameter to 3 branch of paralleling switch under off state.
3 input terminal of paralleling switch exports the radiofrequency signal to receive biggish radiofrequency signal, output end, works as amplifier
Work is opened in bypass condition, bypassing big signal to output end.
As shown in Fig. 5, the structure having the same of control circuit 4 and 5, by voltage comparator 6, source follower 7, if
Dry phase inverter 8 is constituted, and input voltage VIN is compared with reference voltage VREF, then exports higher than VREF by voltage comparator 6
High potential then exports low potential lower than VREF, and source follower 7 improves the driving capability of voltage comparator 6, most to buffer
Afterwards by paraphase several times, different control voltage is exported via phase inverter 8, circuit is controlled.
Further, how will improve in the linearity of the one chip with bypass functionality low-noise amplifier and bandwidth of operation
The circuit structure of gain and flatness is illustrated, and mainly following circuit part: low-noise amplifier 1, series connection is opened
Close 2 and paralleling switch 3.
As shown in Fig. 6, main body low-noise amplifier part uses the current multiplexing structure of improvement, in this configuration radio frequency
Access has two, respectively by transistor Q1- inductance L1- transistor Q2, constitutes with transistor Q1- capacitor C1- transistor Q2.Wherein
L1 is a lesser inductance, is opened a way to low frequency signal short circuit to high-frequency signal, capacitor C1 is a lesser capacitor, to low frequency
Signal shorts open a way to high-frequency signal, and capacitor C2 is a biggish capacitor, and when signal frequency is lower, the capacitor is to radio circuit
Play impedance matching, when signal frequency is higher, is equivalent to a short-circuit component.Q1-L1-Q2 access structure is similar to classics
Cascode structure, Q1-C1-Q2 access structure are similar to classical current multiplexing structure, wherein capacitor C1, C2, C3 and inductance
L1 is impedance matching element, determines the working frequency range of low-noise amplifier.In low-noise amplifier structure used, low frequency letter
Number being passed through by Q1-L1-Q2, high-frequency signal is passed through by Q1-C1-Q2, and amplifier can be made to have higher gain in bandwidth of operation,
And since the presence of capacitor C1 can compensate the gate-source capacitance variation of transistor Q2, improve the linearity of low-noise amplifier；
As shown in fig. 7, paralleling switch 3 uses serial parallel structure, which possesses biggish bandwidth of operation and tolerance power, and
There is the good linearity.
For prevent low-noise amplifier 1 with paralleling switch 3 interacting under different conditions, in original cascade
It is improved in low-noise amplifier structure basis, is included in common-source stage transistor Q1 source electrode concatenation control pipe Q3 to ground, leads to
It crosses control control circuit 4 and 5 and controls the working condition of low-noise amplifier further to control Q3 grid voltage Vctrl, when
Q3 is opened when Vctrl is greater than 0.6V, and low-noise amplifier works normally, and when Vctrl is lower than 0.3V, Q3 is turned off, low noise amplification
Device shutdown, and amplifier common-source stage transistor Q1 input impedance is in high-impedance state, it can be in the base for not influencing amplifier status performance
Parasitic parameter caused by avoiding amplifier to change when turning off because of Q1 grid voltage on plinth changes, to avoid the line of paralleling switch 3
Property degree deteriorate；It connects in series switch 2 in 1 output end of low-noise amplifier, output end voltage variation is drawn when preventing amplifier from turning off
The parasitic parameter variation risen, so that the linearity of paralleling switch 3 be avoided to deteriorate.Paralleling switch 3 uses reflective designs, turns off shape
It is in high resistant under state, avoids the influence to 1 performance of low-noise amplifier.
Fig. 8 gives one chip low-noise amplifier of the high-gain High Linear with bypass functionality in two kinds of amplification and bypass
S21 and OIP3 simulation curve under state, the results show that in common communications band 2.5-2.7GHz, under magnifying state, circuit
The OIP3 of gain flatness and 34dBm or more within the gain of 25dB or more, 0.5dB can be provided；Under bypass condition, channel
Interior Insertion Loss is less than 1.5dB, and OIP3 is greater than 38dBm, can satisfy mobile communication application demand.
To sum up, the present invention mainly pass through design the one chip low-noise amplifier with bypass functionality amplifier, switch and
Controling circuit structure can make the amplifier work under various states, and possess higher gain in bandwidth of operation
With the linearity, mobile communication application demand can satisfy, be mainly reflected in following five aspects: (1) by using the electricity of improvement
Stream multiplexing amplifier architecture realizes high-gain and High Linear under signal magnifying state in bandwidth of operation；(2) simultaneously by using string
The switch of structure realizes the wide bandwidth of operation of device and the High Linear in bandwidth of operation under bypass condition；(3) by improving amplification
The control mode of device and switch and guarantee the High Linear of bypass condition lower switch access in amplifier out concatenation switching circuit
Degree；(4) by designing control of the symmetrical control circuit completion to amplifier and switch, so that further progress device works
The switching of mode；(5) GaAs E/D pHEMT technique is used, by low-noise amplifier, tandem tap, paralleling switch, control electricity
The units such as road are fully integrated to be realized in single IC chip, is improved the integrated level of device, is improved low-noise amplifier indirectly
The reliability of module provides more conveniences for the use of user.Certainly, the low noise of the present invention with bypass functionality
Acoustic amplifier includes the basic structure of low-noise amplifier involved in the prior art, such as band bypass function shown in Fig. 1
Common source and common grid amplifier structure shown in the low-noise amplifier universal architecture and Fig. 3 of energy.
Embodiment 1
A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality, has a low-noise amplifier, is used for
Radio-frequency input signals is amplified；Two switches, one is connected on low-noise amplifier output end, puts for controlling low noise
The on-off of big device series loop, while improving the isolation of low-noise amplifier series loop under off state；Another with it is low
Noise amplifier circuit is in parallel, for the radio-frequency input signals of device to be immediate by-pass to the output end of device；Two control electricity
Road, a working condition switched for controlling low-noise amplifier series connection with it, another is for controlling low-noise amplifier
With the working condition of paralleling switch；
Using improved current multiplexing structure, when on the one hand low-noise amplifier being made to work using lesser operating current obtain compared with
High guarantees the lower noise coefficient of device with interior gain and flatness simultaneously；In common source pipe source series control transistor to low
The operating mode of noise amplifier is controlled, and the parasitic capacitance of amplifier under off state is on the one hand reduced, on the other hand anti-
When only big radiofrequency signal is injected, low-noise amplifier is opened.
Tandem tap uses cascaded structure, and there is a lesser insertion loss in when unlatching, and when shutdown can provide certain isolation.
When low-noise amplifier work, the switch is opened, and guarantees that low-noise amplifier circuit works normally, radio-frequency input signals is put
Greatly；The switch OFF when low-noise amplifier does not work improves the isolation in low-noise amplifier circuit.
Using series and parallel structure, the radiofrequency signal of low-noise amplifier input terminal can be immediate by-pass to device by when unlatching
Output end, while series and parallel structure can be improved switch open when input tolerance power；It can be provided when shutdown higher
Isolation guarantees that low-noise amplifier circuit works normally.
Two controling circuit structures are identical, are made of voltage comparator, source follower and one or more phase inverters,
It can be to the working condition of low-noise amplifier, tandem tap, paralleling switch by changing control voltage；
It is using GaAs E/D pHEMT technique, the units such as low-noise amplifier, tandem tap, paralleling switch, control circuit are complete
It is integrated in the realization of single IC chip, the Linear Amplifer of signal can be realized within the scope of wider applying frequency.
Claims (6)
1. one chip low-noise amplifier of a kind of high-gain High Linear with bypass functionality, it is characterized in that including that a low noise is put
Big device, tandem tap, paralleling switch, A control circuit, B control circuit, wherein tandem tap input terminal is serially connected in low noise amplification
Device output end, output end is in parallel with paralleling switch output end, and paralleling switch input terminal is in parallel with low-noise amplifier input terminal, A
Control circuit and low-noise amplifier, tandem tap are connected in series, and B control circuit is connected with low-noise amplifier, paralleling switch
Connection.
2. special with according to a kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality described in claim 1
Sign is that the A control circuit, B control circuit structure are identical, including voltage comparator, source follower and multiple phase inverters, electricity
Comparator, source follower and several phase inverters is pressed to be connected in series, voltage comparator compares input voltage and reference voltage
Compared with then exporting high potential higher than reference voltage, then export low potential lower than reference voltage, source follower is improved to buffer
Voltage comparator driving capability exports different control voltage and controls circuit finally by multiple phase inverter paraphase.
3. special with according to a kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality described in claim 1
Sign is the low-noise amplifier using follow-on current multiplexing structure, including two radio frequency paths, and one includes Q1 crystal
Pipe-L1 inductance-Q2 transistor, another includes Q1 transistor-C1 capacitor-Q2 transistor；Wherein L1 inductance is one small
It in the inductance of 2nH, opens a way to low frequency signal short circuit to high-frequency signal, C1 capacitor is the capacitor for being less than 2pF, is believed low frequency
Number short circuit opens a way to high-frequency signal, and C2 capacitor is the capacitor for being greater than 3pF, plays impedance matching to 2GHz signal below and makees
With being equivalent to a short-circuit component to the signal of 2GHz or more；2GHz signal below is by Q1 transistor-L1 inductance-Q2 crystal
Pipe passes through, and the signal of 2GHz or more is passed through by Q1 transistor-C1 capacitor-Q2 transistor, make amplifier have in bandwidth of operation compared with
High gain；The gate-source capacitance of C1 capacitance compensation Q2 transistor changes, and improves the linearity of low-noise amplifier.
4. with the one chip low-noise amplifier according to a kind of high-gain High Linear described in right 1 with bypass functionality, it is characterized in that
The one chip low-noise amplifier opens low-noise amplifier, tandem tap, parallel connection in using GaAs E/D pHEMT technique
The units such as pass, control circuit are fully integrated to be realized in single IC chip, makes to realize the linear of signal within the scope of applying frequency
Amplification.
5. with the one chip low-noise amplifier according to a kind of high-gain High Linear described in right 1 with bypass functionality, it is characterized in that
Insertion loss is small when the tandem tap is opened, and when shutdown provides isolation；The tandem tap when low-noise amplifier work
It opens, guarantees that low-noise amplifier circuit works normally, radio-frequency input signals is amplified；The string when low-noise amplifier does not work
Join switch OFF, improves the isolation in low-noise amplifier circuit.
6. with the one chip low-noise amplifier according to a kind of high-gain High Linear described in right 1 with bypass functionality, it is characterized in that
The paralleling switch uses series and parallel structure, and Q1 transistor and Q2 transistor form series arm, to control radiofrequency signal
On-off, Q3 transistor forms parallel branch, to improve the input tolerance power of radiofrequency signal；Switch open when Q1 transistor with
The radiofrequency signal of low-noise amplifier input terminal, is immediate by-pass to the output of device by Q2 transistor turns, Q3 transistor cutoff
End, while improving input tolerance power when switch is opened；Q1 transistor and Q2 transistor cutoff, Q3 transistor when switch OFF
Conducting provides isolation, guarantees that low-noise amplifier circuit works normally.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811039176.2A CN109194291A (en) | 2018-09-06 | 2018-09-06 | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811039176.2A CN109194291A (en) | 2018-09-06 | 2018-09-06 | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality |
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| CN109194291A true CN109194291A (en) | 2019-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811039176.2A Pending CN109194291A (en) | 2018-09-06 | 2018-09-06 | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality |
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| CN111884642A (en) * | 2020-08-04 | 2020-11-03 | 西安博瑞集信电子科技有限公司 | Single-chip absorption type single-pole single-throw switch chip |
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| CN116131770A (en) * | 2023-04-18 | 2023-05-16 | 成都明夷电子科技有限公司 | High-integration-level high-linearity low-noise amplifier |
| CN116436420A (en) * | 2023-06-15 | 2023-07-14 | 苏州悉芯射频微电子有限公司 | High-performance low-noise amplifier |
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| CN116436420B (en) * | 2023-06-15 | 2023-08-22 | 苏州悉芯射频微电子有限公司 | High-performance low-noise amplifier |
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