CN210327526U - High-speed switch suitable for millimeter wave frequency band - Google Patents
High-speed switch suitable for millimeter wave frequency band Download PDFInfo
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- CN210327526U CN210327526U CN201921948616.6U CN201921948616U CN210327526U CN 210327526 U CN210327526 U CN 210327526U CN 201921948616 U CN201921948616 U CN 201921948616U CN 210327526 U CN210327526 U CN 210327526U
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Abstract
The utility model discloses a high-speed switch suitable for millimeter wave frequency band, which comprises an upper switch channel and a lower switch channel which are connected with the input end of the high-speed switch; an impedance matching circuit is formed in the upper switch path and the lower switch path through transmission lines; voltage control switches are arranged in the upper switch path and the lower switch path; the upper switch path is interconnected to the lower switch path by a voltage controlled switch. The transmission line for the high-speed switch replaces a lumped element in the existing switch circuit, reduces the loss of a matching network in the switch circuit, the self-resonance effect and the influence of parasitic capacitance, and simultaneously utilizes the characteristics of the transmission line under different input signals, thereby effectively improving the isolation of the high-speed switch and increasing the application range of the high-speed switch.
Description
Technical Field
The invention belongs to the technical field of microwave switch circuit design, and particularly relates to a high-speed switch suitable for a millimeter wave frequency band.
Background
Microwave switch circuits usually use series and parallel switches, microstrip transmission lines, lumped planar inductors, etc. to form various types of filter networks to achieve the purpose of switching.
Single pole double throw switches are widely used in transmission/reception modules, phase shifters, attenuators and multi-standard communication systems. As a key component for controlling high-speed signal flow in a modern communication system, a switch requires low insertion loss, high isolation, high power endurance, and the like, and the switch is designed by generally balancing the performance of the switch, so the switch is also more demanding.
At present, the series-parallel structure is widely used for designing broadband switches, input and output matching networks of the switches are all composed of concentrated elements, however, in the traditional CMOS technology, the influence of the loss, self-resonance effect and parasitic capacitance of the concentrated elements is more obvious in a higher frequency range, and in addition, the larger capacitive coupling reduces the Q value of the inductor and increases the loss of the matching network mainly based on the inductor.
SUMMERY OF THE UTILITY MODEL
To the above-mentioned not enough among the prior art, the utility model provides a high-speed switch suitable for millimeter wave frequency channel has solved lumped element's in traditional broadband switch loss, influence from resonance effect and parasitic capacitance is comparatively showing, and the higher problem of matching network's loss.
In order to achieve the purpose of the invention, the utility model adopts the technical scheme that: a high-speed switch suitable for millimeter wave frequency band comprises an upper switch path and a lower switch path which are both connected with the input end of the high-speed switch;
the upper switch path and the lower switch path form an impedance matching circuit through transmission lines;
voltage control switches are arranged in the upper switch path and the lower switch path;
the upper switch path is interconnected to the lower switch path by a voltage controlled switch.
Further, the voltage control switch includes an upper voltage control switch SW1 and a lower voltage control switch SW 2;
the upper switch path includes a transmission line CPW 1;
one end of the transmission line CPW1 is used as an input end In of a high-speed switch, the other end of the transmission line CPW1 is connected with the drain of a MOS transistor Mn1, one end of a resistor R1 and one end of a transmission line CPW3 respectively, the gate of the MOS transistor Mn1 is connected with one end of a resistor Rg1, the other end of the resistor Rg1 is connected with an upper voltage control switch SW1, the source of the MOS transistor Mn1 is grounded, the bulk silicon of the MOS transistor Mn1 is connected with a ground resistor Rb1, the other end of the resistor R1 is connected with the lower voltage control switch SW2, the other end of the transmission line CPW3 is grounded, and the other end of the transmission line CPW1 is used as an output end Out1 of an upper switch path;
the lower switching path comprises a transmission line CPW 2;
one end of the transmission line CPW2 is also used as an input end In of a high-speed switch, the other end of the transmission line CPW2 is respectively connected with the drain of a MOS transistor Mn2, one end of a resistor R2 and one end of a transmission line CPW4, the gate of the MOS transistor Mn2 is connected with a lower voltage control switch SW2 through a resistor Rg2, the bulk silicon of the MOS transistor Mn2 is connected with a grounding resistor Rb2, and the source of the MOS transistor Mn2 is grounded; the other end of the resistor R2 is connected with an upper voltage control switch SW1, the other end of the transmission line CPW4 is grounded, and the other end of the transmission line CPW2 is used as an output end Out2 of a lower switch path.
Further, the upper switch forms an impedance matching circuit through the transmission line CPW1 and the transmission CPW3 in the middle;
the transmission line CPW2 and the transmission line CPW4 in the lower switch path form an impedance matching circuit.
Further, the characteristic impedances of the transmission line CPW1, the transmission line CPW2, the transmission line CPW3 and the transmission line CPW4 are all 55 Ω;
the length ranges of the transmission lines CPW1 and CPW2 are 180-230 um;
the length range of the transmission line CPW3 is 180-230 um;
the length range of the transmission line CPW4 is 90-120 um.
Further, the resistances of the resistor Rg1, the resistor Rg2, the resistor Rb1 and the resistor Rb2 are 10k Ω.
The utility model has the advantages that:
the utility model provides a high-speed alternative switch suitable for millimeter wave frequency channel replaces lumped element among the current switch circuit with the transmission line, has reduced matching network's loss among the switch circuit, from resonance effect and parasitic capacitance's influence, utilizes the transmission line characteristic under different input signal simultaneously, has effectively improved high-speed switch's isolation, increases this high-speed switch's application scope.
Drawings
Fig. 1 is the utility model provides a high-speed switch circuit schematic diagram suitable for millimeter wave frequency channel.
Fig. 2 is the utility model provides a simulation schematic diagram of high-speed switch suitable for millimeter wave frequency channel.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and various changes will be apparent to those skilled in the art as long as they are within the spirit and scope of the present invention as defined and defined by the appended claims, and all inventions contemplated by the present invention are protected.
Example 1:
as shown in fig. 1, a high-speed switch suitable for a millimeter wave frequency band includes an upper switch path and a lower switch path both connected to an input end of the high-speed switch;
an impedance matching circuit is formed in the upper switch path and the lower switch path through transmission lines;
voltage control switches are arranged in the upper switch path and the lower switch path;
the upper switch path is interconnected to the lower switch path by a voltage controlled switch.
The voltage control switch in the embodiment of the present invention includes an upper voltage control switch SW1 and a lower voltage control switch SW 2;
the upper switch path includes transmission line CPW 1;
one end of a transmission line CPW1 serves as an input end In of a high-speed switch, the other end of the transmission line CPW1 is connected with the drain of an MOS (metal oxide semiconductor) tube Mn1, one end of a resistor R1 and one end of a transmission line CPW3 respectively, the grid of an MOS tube Mn1 is connected with one end of a resistor Rg1, the other end of a resistor Rg1 is connected with an upper voltage control switch SW1, the source of the MOS tube Mn1 is grounded, the bulk silicon of an MOS tube Mn1 is connected with a grounded resistor Rb1, the other end of a resistor R1 is connected with a lower voltage control switch SW2, the other end of the transmission line CPW3 is grounded, and the other end of the transmission line CPW1 serves;
the lower switch path includes transmission line CPW 2;
one end of a transmission line CPW2 is also used as an input end In of a high-speed switch, the other end of the transmission line CPW2 is respectively connected with the drain of a MOS tube Mn2, one end of a resistor R2 and one end of a transmission line CPW4, the grid of the MOS tube Mn2 is connected with a lower voltage control switch SW2 through a resistor Rg2, the bulk silicon of the MOS tube Mn2 is connected with a grounding resistor Rb2, and the source of the MOS tube Mn2 is grounded; the other end of the resistor R2 is connected with an upper voltage control switch SW1, the other end of the transmission line CPW4 is grounded, and the other end of the transmission line CPW2 is used as an output end Out2 of the lower switch path.
In a specific operation, when the input of the upper voltage control switch SW1 is 0 (low voltage) and the input of the lower voltage control switch SW2 is 1 (high voltage), the upper switch path is turned on. At this time, the MOS transistor Mn1 is turned off, a signal input from the input terminal In of the high-speed switch is output from the output terminal Out1 of the upper switch path through the transmission line CPW1, the MOS transistor Mn2 is turned on, and the input signal is isolated and cannot be output from the output terminal Out2 of the lower switch path; when the input of the upper voltage control switch SW1 is 1 (high voltage) and the input of the lower voltage control switch SW2 is 0 (low voltage), the lower switch path is turned on. At this time, the MOS transistor Mn2 is turned off, a signal input from the input terminal In of the high-speed switch is output from the output terminal Out2 of the lower switch path through the transmission line CPW2, the MOS transistor Mn1 is turned on, and the input signal is isolated and cannot be output from the output terminal Out1 of the upper switch path. The function of the high-speed alternative switch is realized by controlling the input of the upper voltage control switch and the lower voltage control switch. Through the signal flow direction when the high-speed switch works, the input signals do not pass through components from In to Out1 or Out2 and only pass through a transmission line, and the circuit loss is greatly reduced.
The utility model provides a high-speed switch has better isolation, and when Sw1 input is 1 (high voltage), Mn1 opens, and node V1 is 0, and the signal is kept apart and can't be followed Out1 output, but transmission line CPW1 is equivalent to a high impedance this moment, has kept apart the signal and has exported from the upper route, has effectively improved the isolation; similarly, when the Sw2 input is 1 (high voltage), Mn2 is turned on, and the node V2 is 0, the signal is isolated and cannot be output from Out2, but at this time, the transmission line CPW2 is equivalent to a high impedance, so that the signal is isolated and output from the lower path, and the isolation is effectively improved.
In the embodiment of the utility model, the transmission line CPW1 and the transmission CPW3 in the upper switch pass through form an impedance matching circuit; the transmission line CPW2 and the transmission line CPW4 in the lower switch path form an impedance matching circuit, and the impedance matching circuit formed by the transmission lines enables the high-speed switch to realize an impedance matching function.
It should be noted that the characteristic impedances of the transmission line CPW1, the transmission line CPW2, the transmission line CPW3 and the transmission line CPW4 in the present invention are all 55 Ω; the length ranges of the transmission line CPW1 and the transmission line CPW2 are 180-230 um; the length range of the transmission line CPW3 is 180-230 um; the length of the transmission line CPW4 ranges from 90 um to 120 um. In addition, in order to reduce the influence of the parasitic capacitance of the MOS transistor, the gate of the MOS transistor Mn1(Mn2) and bulk silicon are respectively connected with a large resistor Rg1(Rg2) and an Rb1(Rb2), so that the resistances of the resistor Rg1, the resistor Rg2, the resistor Rb1 and the resistor Rb2 in the high-speed switch are 10k Ω; and the resistance values of the resistor R1 and the resistor R2 are also large.
In an embodiment of the present invention, a simulation example of a high-speed switch in the present invention is provided:
when the lower switch path is opened, the simulation results of port standing wave coefficient, isolation and insertion loss of the high-speed switch are shown In fig. 2, wherein VSWR1 represents the standing wave coefficient of the input port (In), and the value of the standing wave coefficient is 1.20207; VSWR2 represents the standing wave coefficient of the output port Out1 (off state), which has a value of 6.255424; VSWR3 represents the standing wave coefficient of the output port Out2 (on state), which has a value of 1.223617. S21 denotes isolation, isolation is 47.03841dB, S31 denotes insertion loss, insertion loss is 2.981572 dB; the simulation result shows that the high-speed switch applicable to the millimeter wave frequency band has good isolation and low loss.
The utility model has the advantages that:
the utility model provides a high-speed alternative switch suitable for millimeter wave frequency channel replaces lumped element among the current switch circuit with the transmission line, has reduced matching network's loss among the switch circuit, from resonance effect and parasitic capacitance's influence, utilizes the transmission line characteristic under different input signal simultaneously, has effectively improved high-speed switch's isolation, increases this high-speed switch's application scope.
Claims (5)
1. A high-speed switch suitable for millimeter wave frequency band is characterized by comprising an upper switch path and a lower switch path which are both connected with the input end of the high-speed switch;
the upper switch path and the lower switch path form an impedance matching circuit through transmission lines;
voltage control switches are arranged in the upper switch path and the lower switch path;
the upper switch path is interconnected to the lower switch path by a voltage controlled switch.
2. The high-speed switch suitable for millimeter wave frequency band according to claim 1, wherein said voltage control switch comprises an upper voltage control switch SW1 and a lower voltage control switch SW 2;
the upper switch path includes a transmission line CPW 1;
one end of the transmission line CPW1 is used as an input end In of a high-speed switch, the other end of the transmission line CPW1 is connected with the drain of a MOS transistor Mn1, one end of a resistor R1 and one end of a transmission line CPW3 respectively, the gate of the MOS transistor Mn1 is connected with one end of a resistor Rg1, the other end of the resistor Rg1 is connected with an upper voltage control switch SW1, the source of the MOS transistor Mn1 is grounded, the bulk silicon of the MOS transistor Mn1 is connected with a ground resistor Rb1, the other end of the resistor R1 is connected with the lower voltage control switch SW2, the other end of the transmission line CPW3 is grounded, and the other end of the transmission line CPW1 is used as an output end Out1 of an upper switch path;
the lower switching path comprises a transmission line CPW 2;
one end of the transmission line CPW2 is used as an input end In of a high-speed switch, the other end of the transmission line CPW2 is respectively connected with the drain of a MOS transistor Mn2, one end of a resistor R2 and one end of a transmission line CPW4, the gate of the MOS transistor Mn2 is connected with a lower voltage control switch SW2 through a resistor Rg2, the bulk silicon of the MOS transistor Mn2 is connected with a grounding resistor Rb2, and the source of the MOS transistor Mn2 is grounded; the other end of the resistor R2 is connected with an upper voltage control switch SW1, the other end of the transmission line CPW4 is grounded, and the other end of the transmission line CPW2 is used as an output end Out2 of a lower switch path.
3. The high-speed switch suitable for the millimeter wave band according to claim 2, wherein the upper switch forms an impedance matching circuit through a transmission line CPW1 and a transmission CPW3 in the middle;
the transmission line CPW2 and the transmission line CPW4 in the lower switch path form an impedance matching circuit.
4. The high-speed switch suitable for millimeter wave frequency band according to claim 2, wherein the characteristic impedances of the transmission line CPW1, the transmission line CPW2, the transmission line CPW3 and the transmission line CPW4 are all 55 Ω;
the length ranges of the transmission lines CPW1 and CPW2 are 180-230 um;
the length range of the transmission line CPW3 is 180-230 um;
the length range of the transmission line CPW4 is 90-120 um.
5. The high-speed switch of claim 2, wherein the resistances of the resistor Rg1, the resistor Rg2, the resistor Rb1 and the resistor Rb2 are 10 kOmega.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921948616.6U CN210327526U (en) | 2019-11-12 | 2019-11-12 | High-speed switch suitable for millimeter wave frequency band |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921948616.6U CN210327526U (en) | 2019-11-12 | 2019-11-12 | High-speed switch suitable for millimeter wave frequency band |
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| CN210327526U true CN210327526U (en) | 2020-04-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112039444A (en) * | 2020-11-04 | 2020-12-04 | 成都铱通科技有限公司 | Gain amplifier for improving variation range of positive temperature coefficient |
| CN113067569A (en) * | 2021-03-26 | 2021-07-02 | 广州穗源微电子科技有限公司 | Improved single-pole double-throw millimeter wave band distributed switch |
-
2019
- 2019-11-12 CN CN201921948616.6U patent/CN210327526U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112039444A (en) * | 2020-11-04 | 2020-12-04 | 成都铱通科技有限公司 | Gain amplifier for improving variation range of positive temperature coefficient |
| CN112039444B (en) * | 2020-11-04 | 2021-02-19 | 成都铱通科技有限公司 | Gain amplifier for improving variation range of positive temperature coefficient |
| CN113067569A (en) * | 2021-03-26 | 2021-07-02 | 广州穗源微电子科技有限公司 | Improved single-pole double-throw millimeter wave band distributed switch |
| CN113067569B (en) * | 2021-03-26 | 2022-03-15 | 广州穗源微电子科技有限公司 | Improved single-pole double-throw millimeter wave band distributed switch |
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