CN205961066U - Wideband radio frequency power amplifier - Google Patents
Wideband radio frequency power amplifier Download PDFInfo
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- CN205961066U CN205961066U CN201620899936.7U CN201620899936U CN205961066U CN 205961066 U CN205961066 U CN 205961066U CN 201620899936 U CN201620899936 U CN 201620899936U CN 205961066 U CN205961066 U CN 205961066U
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Abstract
The utility model relates to a wideband radio frequency power amplifier belongs to radio frequency circuit technical field, including power amplification transistor, input, output matching network, feedback network to and DC bias supply network, the feedback network includes an inductance and two resistance, behind inductance and one of them resistor parallel with, again with another one series resistance, forms a two -port network, the one end of feedback network is passed through stopping direct current electric capacity and is connected with the output of power amplification transistor, and the other end is connected with the input of power amplification transistor, the utility model discloses a frequency response compensation of feedback network realizes good gain flatness in large broadband.
Description
Technical field
This utility model belongs to radio circuit technical field, especially, is related to a kind of wide-band radio frequency power amplifier.
Background technology
It is widely used in communication, electronic countermeasure and scientific experimentss measuring system with wide-band radio frequency power amplifier
In, the bandwidth that single power amplifier is covered is more and more wider.Amplify more than the broadband radio-frequency power of 10 octaves in bandwidth
In device, the on the one hand input in broadband to be realized, output matching network, to obtain good input coupling and fan-out capability；Another
Aspect, because, limited by the gain bandwidth product of power amplifying transistor itself, its gain raises with frequency and declines, causes gain frequency
Rate response changes in bandwidth of operation, needs corresponding measure to ensure gain flatness in working band, prevents gain fluctuation excessive
And increase design difficulty and the system complexity that radio frequency amplifies link.
The method improving wide-band radio frequency power amplifier gain flatness usually adopts negative feedback, by reducing gain
Method obtains bigger bandwidth.Conventional feedback network, as shown in figure 1, power amplifying transistor 11 amplifies for common source, feeds back
Network includes stopping direct current resistance Cf and feedback resistance Rf, and Rf is connected with Cf one end, and the other end connects to power amplifying transistor
Grid, constitutes negative feedback.This feedback network is realized simply, to improve gain flatness in certain bandwidth.But due to
Element is few, and the parameter being available for adjusting is limited, when bandwidth is larger, often cannot take into account the index of amplifier other side, for example：
General amplifier low frequency end high gain, front end gain is low, and therefore feedback network wishes also to have low-pass characteristic, increases low frequency end
Feedback factor big, to reduce low frequency end gain.As shown in Figure 1 in circuit, the grid of power amplifying transistor 11 is between ground
With the presence of equivalent capacity Ce, this electric capacity includes transistor 11 electric capacity of itself, and the electric capacity of outside input match circuit；Ce
Constitute the network of low-pass characteristic with feedback resistance Rf, its frequency response is determined by R Ce；Because Ce can affect input matching network,
Adjustment Rf can affect overall gain it is therefore desirable to weigh between gain flatness, input coupling and overall gain size three again
Weighing apparatus, when broader bandwidth, is difficult to take into account three indexs simultaneously.
Utility model content
The purpose of this utility model is to provide a kind of wide-band radio frequency power amplifier, adds frequency choosing in feedback network
Selecting property element, in big bandwidth and on the premise of ensureing other indexs, is effectively improved the gain flatness of power amplifier.
The purpose of this utility model is realized in：
A kind of wide-band radio frequency power amplifier, inclined including power amplifying transistor, input, output matching network and direct current
Put supply network it is characterised in that also including feedback network；Partiting dc capacitor and described work(are passed through in one end of described feedback network
The outfan of rate amplifying transistor connects, and the other end is connected with the input of described power amplifying transistor；Described power amplification
Transistor works in anti-phase amplification configuration；
Described input matching network one end is connected with the input of described power amplifying transistor, and the other end is power amplification
The input of device；
Described output matching network one end is connected with the outfan of described power amplifying transistor, and the other end is power amplification
The outfan of device；
Described direct current biasing supply network, external dc electricity is delivered to input and the output stage of power amplifying transistor, is
It provides direct current biasing and power supply；
Described feedback network includes an inductance and two resistance, after described inductance and one of resistor coupled in parallel, then with
Another one resistant series, form a two-port network.
Preferred version, described input matching network includes a partiting dc capacitor, and one is connected on the electricity in input channel
Sense and two electric capacity being parallel to ground；Wherein one end of partiting dc capacitor is connected with the input of power amplifier, the other end with
Be connected on the inductance connection in input channel, the other end of the described inductance being connected in input channel again with described power amplification
The input of transistor connects；It is connected on two of the inductance in input channel described in one termination of two electric capacity being parallel to ground
End, the other end ground connection of two electric capacity being parallel to ground.
Preferred version, described output matching network includes a partiting dc capacitor, and a series inductance and one are over the ground simultaneously
Connection electric capacity；One end of described series inductance is connected with the outfan of described power amplifying transistor, the other end and partiting dc capacitor
Connect；Described one end of shunt capacitance over the ground is connected with the junction point of described series inductance and isolated DC electric capacity, and the other end is grounded.
Preferred version, described direct current biasing supply network include one end be connected with external bias voltage input end, the other end
The biasing resistor that is connected with the input of described power amplifying transistor, two be connected to external bias voltage input end and ground
Between decoupling capacitance, one end be connected with external dc feeder ear, the other end is connected with described power amplifying transistor outfan
The resistance of power supply inductance and power supply inductance in parallel and two decoupling capacitances being connected between external dc feeder ear and ground.
Preferred version, described power amplifying transistor, input, output matching network, feedback network, and direct current biasing supply
Electric network is installed and is made on a printed circuit, and this printed circuit board (PCB) is installed in metal case, and described box body bottom is radiating
Structure.
Due to the utilization of technique scheme, this utility model compared with prior art has following advantages：
This utility model wide-band radio frequency power amplifier, adds frequency selective element in feedback network, is ensureing work(
While all other indexs of rate amplifier, increased the adjustment means of gain frequency response, thus being effectively improved in big bandwidth
Gain flatness.
Brief description
Below in conjunction with the accompanying drawings technical solutions of the utility model are described further：
Fig. 1 is the feedback network schematic diagram of power amplifier；
Fig. 2 is the theory diagram of this utility model embodiment；
Fig. 3 is the circuit theory diagrams of this utility model embodiment.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment the utility model is described in further detail.
This utility model design wide-band radio frequency power amplifier, as shown in Figure 2 and Figure 3, including power amplifying transistor 1,
Input matching network 2, output matching network 3, feedback network 4 and direct current biasing supply network 5.
The power amplifying transistor 1 of the present embodiment can select horizontal proliferation field-effect transistor (LDMOS), using common source
Pole work configuration, its source class is connected with ground level, and grid is input, drains as outfan；It is input to outfan composition anti-phase
Amplify.Bipolar transistor such as HBT can also be adopted, not affect the principle of the present embodiment.
The input matching network 2 of the present embodiment includes partiting dc capacitor C1, and is made up of electric capacity C2, inductance L1 and electric capacity C3
√ type impedance transformer network；Wherein one end of C1 is connected with the signal input port of power amplifier, and the other end is hindered with √ type
Resistance switching network connects；The left side of inductance L1 is connected with partiting dc capacitor C1, as the input of impedance transformer network；Inductance L1
Right side be connected with the grid of power amplifying transistor 1, as the outfan of impedance transformer network；Electric capacity C2 one end is connected to resistance
The input of resistance switching network, the other end is grounded；Electric capacity C3 one end connects the outfan of impedance transformer network, and the other end is grounded.
The output matching network 3 of the present embodiment includes partiting dc capacitor C5, series inductance L2 and shunt capacitance C4 over the ground；Its
The left side of middle series inductance L2 is connected with the drain electrode of power amplifying transistor 1, and right side is connected with partiting dc capacitor C5；In parallel over the ground
Electric capacity C4 one end is connected with the right side of inductance L2, and the other end is connected to ground；One end of partiting dc capacitor is connected with the right side of inductance L2
Connect, the other end is as the output port of power amplifier.
The feedback network 4 of the present embodiment includes inductance L3, resistance R1 and R2；Feedback network passes through partiting dc capacitor C6 and work(
The drain electrode of rate amplifying transistor 1 connects；The other end of feedback network is connected with the grid of power amplifying transistor 1；Feedback network
In, inductance L3 is in parallel with R1, then connects with R2 again, and the L3 terminal in parallel with R1 is as a port of feedback network, resistance
The other end of R2 is as another port of feedback network；Two ports of feedback network can exchange.
In the feedback network 4 of the present embodiment, inductance L1 increases, and the feedback factor of front end reduces, and can lift front end
Gain, vice versa；The gain of front end together decides on by inductance L1, resistance R1 with R2；In low frequency end, inductance L1 is close
Short circuit, so feedback factor is mainly determined by resistance R1, reduces R1 and can reduce low frequency end gain；Want when low frequency end gain meets
When asking, R1 can be kept constant, adjustment L1 and R1 can adjust front end gain, thus reaching the gain flatness of optimum.
In addition, the Q-value of inductance after R1 is in parallel with L3, can be reduced, be on the one hand conducive to frequency response flatness, on the other hand can also improve
The stability of circuit.
The direct current biasing supply network 5 of the present embodiment includes biasing power supply 51 and drain electrode power supply 52 two parts；Wherein bias
Power supply 51 is made up of series resistance R3, decoupling capacitance C7 and C8, and series resistance R3 one end is connected with external bias power voltage supply end,
The other end is connected with the grid of power amplifying transistor 1, and decoupling capacitance C7 and C8 is connected in parallel on bias voltage feeder ear between ground；
Drain electrode power supply 52 includes inductance L4, resistance R4 and decoupling capacitance C9 and C10；Wherein inductance L4 one end and external drain feeder ear
Son connects, and the other end is connected with the drain electrode of power amplifying transistor 1, and resistance R4 is in parallel with inductance L4, decoupling capacitance C9 and C10
It is connected in parallel between drain electrode power supply terminal and ground.
Power amplifying transistor, input, output matching network, feedback network described in the present embodiment, and direct current biasing confession
Electric network is installed and is made on a printed circuit, and this printed circuit board (PCB) is installed in metal case, and box body bottom is radiator structure.
The present embodiment selects the MW6S004 of Freescale company as power amplifying transistor, by adjustment input, output
, it is achieved that bandwidth of operation is 30MHz～600MHz, gain 16.7 0.5dB, 1dB compress for matching network and feedback network parameter
Point output power is more than the power amplifier of 4.5W.
It should be noted that the feedback network circuit topological structure disclosed in this utility model embodiment is for elaboration technology
Solution principle, and unrestricted this utility model.Any exchange component position, on certain element serial or parallel connection other element,
As long as its principle is equivalent to the circuit topological structure disclosed in embodiment, equally it is considered this utility model institute protection category.
Claims (5)
1. a kind of wide-band radio frequency power amplifier, including power amplifying transistor, input, output matching network, feedback network with
And direct current biasing supply network is it is characterised in that partiting dc capacitor and described power amplification are passed through in one end of described feedback network
The outfan of transistor connects, and the other end is connected with the input of described power amplifying transistor；
Described input matching network one end is connected with the input of described power amplifying transistor, and the other end is power amplifier
Input；
Described output matching network one end is connected with the outfan of described power amplifying transistor, and the other end is power amplifier
Outfan；
Described direct current biasing supply network, external dc electricity is delivered to input and the output stage of power amplifying transistor；
Described feedback network includes an inductance and two resistance, after described inductance and one of resistor coupled in parallel, then with addition
One resistant series, forms a two-port network.
2. a kind of wide-band radio frequency power amplifier according to claim 1 it is characterised in that：Described input matching network bag
Include a partiting dc capacitor, an inductance being connected in input channel and two electric capacity being parallel to ground；Wherein stopping direct current electricity
The one end holding is connected with the input of power amplifier, the other end and the inductance connection being connected in input channel, described series connection
The other end of the inductance in input channel is connected with the input of described power amplifying transistor again；Two electricity being parallel to ground
It is connected on the two ends of the inductance in input channel, the other end ground connection of two electric capacity being parallel to ground described in the termination held.
3. wide-band radio frequency power amplifier as claimed in claim 1 is it is characterised in that described output matching network includes one
Partiting dc capacitor, a series inductance and one shunt capacitance over the ground；One end of described series inductance is brilliant with described power amplification
The outfan of body pipe connects, and the other end is connected with partiting dc capacitor；Described one end of shunt capacitance over the ground and described series inductance and
The junction point of isolated DC electric capacity connects, and the other end is grounded.
4. the wide-band radio frequency power amplifier as described in claim 1,2 or 3 is it is characterised in that described direct current biasing power supply network
Network include one end be connected with external bias voltage input end, the other end inclined with what the input of described power amplifying transistor was connected
Put resistance, two decoupling capacitances being connected between external bias voltage input end and ground, one end and external dc feeder ear even
Connect, the resistance and two of the power supply inductance that the other end is connected with described power amplifying transistor outfan and power supply inductance in parallel
The individual decoupling capacitance being connected between external dc feeder ear and ground.
5. a kind of wide-band radio frequency power amplifier according to claim 4 it is characterised in that：Described power amplification crystal
Pipe, input, output matching network, feedback network, and the installation making of direct current biasing supply network is on a printed circuit, this print
Printed circuit board is installed in metal case, and described box body bottom is radiator structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620899936.7U CN205961066U (en) | 2016-08-18 | 2016-08-18 | Wideband radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620899936.7U CN205961066U (en) | 2016-08-18 | 2016-08-18 | Wideband radio frequency power amplifier |
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| CN205961066U true CN205961066U (en) | 2017-02-15 |
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| CN201620899936.7U Active CN205961066U (en) | 2016-08-18 | 2016-08-18 | Wideband radio frequency power amplifier |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017849A (en) * | 2017-03-07 | 2017-08-04 | 京信通信技术(广州)有限公司 | A kind of power amplifier tube bandwidth expanding method and device |
| CN107359863A (en) * | 2017-07-18 | 2017-11-17 | 中国电子科技集团公司第十三研究所 | Integrated amplifier |
| CN107863939A (en) * | 2017-11-09 | 2018-03-30 | 西安电子科技大学 | Low-power consumption feedback-type power amplification circuit |
| CN108123689A (en) * | 2018-03-06 | 2018-06-05 | 中国计量大学 | A kind of BJT high frequency power amplifiers match circuit |
| CN108712155A (en) * | 2018-07-24 | 2018-10-26 | 青海民族大学 | A kind of distributed power amplifier based on feedback-type two level Darlington transistor |
| CN109302154A (en) * | 2017-12-20 | 2019-02-01 | 上海创远仪器技术股份有限公司 | A kind of choke circuit of low cost ultra wide band |
| CN109921746A (en) * | 2018-12-20 | 2019-06-21 | 佛山臻智微芯科技有限公司 | A kind of impedance matching circuit structure improving radio-frequency power amplifier performance |
| CN113708733A (en) * | 2021-08-27 | 2021-11-26 | 电子科技大学 | Reflection amplification device based on quasi-annular device |
| CN115296629A (en) * | 2022-10-10 | 2022-11-04 | 广东大湾区空天信息研究院 | High-gain positive feedback amplifier |
| CN116961609A (en) * | 2023-07-11 | 2023-10-27 | 广州致远仪器有限公司 | Impedance transformation network circuit, circuit board and high-speed signal acquisition equipment |
-
2016
- 2016-08-18 CN CN201620899936.7U patent/CN205961066U/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017849A (en) * | 2017-03-07 | 2017-08-04 | 京信通信技术(广州)有限公司 | A kind of power amplifier tube bandwidth expanding method and device |
| CN107359863A (en) * | 2017-07-18 | 2017-11-17 | 中国电子科技集团公司第十三研究所 | Integrated amplifier |
| CN107359863B (en) * | 2017-07-18 | 2020-08-18 | 中国电子科技集团公司第十三研究所 | Integrated amplifier |
| CN107863939A (en) * | 2017-11-09 | 2018-03-30 | 西安电子科技大学 | Low-power consumption feedback-type power amplification circuit |
| CN107863939B (en) * | 2017-11-09 | 2020-09-25 | 西安电子科技大学 | Low-power consumption feedback type power amplifying circuit |
| CN109302154A (en) * | 2017-12-20 | 2019-02-01 | 上海创远仪器技术股份有限公司 | A kind of choke circuit of low cost ultra wide band |
| CN108123689A (en) * | 2018-03-06 | 2018-06-05 | 中国计量大学 | A kind of BJT high frequency power amplifiers match circuit |
| CN108712155A (en) * | 2018-07-24 | 2018-10-26 | 青海民族大学 | A kind of distributed power amplifier based on feedback-type two level Darlington transistor |
| CN109921746A (en) * | 2018-12-20 | 2019-06-21 | 佛山臻智微芯科技有限公司 | A kind of impedance matching circuit structure improving radio-frequency power amplifier performance |
| CN113708733A (en) * | 2021-08-27 | 2021-11-26 | 电子科技大学 | Reflection amplification device based on quasi-annular device |
| CN115296629A (en) * | 2022-10-10 | 2022-11-04 | 广东大湾区空天信息研究院 | High-gain positive feedback amplifier |
| CN116961609A (en) * | 2023-07-11 | 2023-10-27 | 广州致远仪器有限公司 | Impedance transformation network circuit, circuit board and high-speed signal acquisition equipment |
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