CN101753106A - RF power amplifier intervalve matching circuit - Google Patents
RF power amplifier intervalve matching circuit Download PDFInfo
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- CN101753106A CN101753106A CN200910042310A CN200910042310A CN101753106A CN 101753106 A CN101753106 A CN 101753106A CN 200910042310 A CN200910042310 A CN 200910042310A CN 200910042310 A CN200910042310 A CN 200910042310A CN 101753106 A CN101753106 A CN 101753106A
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- power amplifier
- intervalve matching
- matching network
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- matching circuit
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Abstract
The present invention relates to the technical field of an RF power amplifier, more specially a circuit for realizing the adjustment of an intervalve matching network of the RF power amplifier. An RF power amplifier intervalve matching circuit comprises a capacitance C2 connected with the output end of a forestage amplifying circuit, a capacitance C3 connected with the input end of a post amplifying circuit and an inductance L4 connected between the common end of the capacitances C2 and C3, wherein the common end of the capacitances C2 and C3 is additionally connected with an adjusting capacitance and a short connecting wire; the other end of the adjusting capacitance and the other end of the short connecting wire hang in the air; one or more adjusting capacitances and short connecting wires can be arranged. the RF power amplifier intervalve matching circuit is applied, which not only can conveniently adjust the intervalve matching network of the RF power amplifier to compensate the offset between an element value and a design value caused by processing discreteness and reach the optimization of the design of the intervalve matching network of the RF power amplifier, but also the harmonic wave and the efficiency of the RF power amplifier can be effectively improved.
Description
Technical field
The present invention relates to the radio-frequency power amplifier technical field, specifically be meant and realize the adjustable a kind of circuit of radio-frequency power amplifier inter-stage matching network.
Background technology
Radio-frequency power amplifier is a circuit module indispensable in the wireless communication system, and the radiofrequency signal after main responsible will the modulation is amplified to the certain power value, launches by antenna again.For the radio-frequency power amplifier that is applied in the portable handheld device transmitter, need it to have small size, high efficiency and low cost, thereby radio-frequency power amplifier should have high as far as possible integrated level.In existing Design of RF Power Amplifier, consider requirement to indexs such as radio frequency power output and power gains, usually adopt two-stage or casacade multi-amplifier to realize radio-frequency power amplifier, as shown in Figure 1, radio-frequency power amplifier comprises dual-stage amplifier Q1 and Q2, input, inter-stage and three matching networks of output and two radio frequency choke induction L2, L4, amplifier Q1, Q2 is used for radiofrequency signal is amplified, output matching network is used for converting load resistance (being generally 50 ohm) to a low-resistance to improve the power output ability, the impedance transformation that inter-stage matching network is used for seeing into from the base stage of Q2 becomes a higher impedance improving the gain of radio-frequency power amplifier, and input matching network is used to realize that 50 ohm input coupling is to reduce the reflection of input radio frequency signal.In order to debug conveniently, output matching network places on the substrate usually, and from production cost and limited substrate size consideration (the existing substrate size that is used for the 3G radio-frequency power amplifier of handheld device is mainly 3mm*3mm), input matching network and inter-stage matching network are integrated in chip internal usually, because inter-stage matching network is very big to the gain effects of radio-frequency power amplifier, specific to Fig. 1, there is an optimal value in inductance L 3, but integrated component is because often there is certain deviation in the discreteness of technology with design load, in order to compensate this deviation, be necessary on the basis that does not increase too many cost, can regulate, thereby reach the interstage matched optimization inter-stage matching network.
Summary of the invention
The present invention is intended to solve radio-frequency (RF) power amplifier circuit in the prior art owing to the production technology reason makes inter-stage matching network actual match value and design load exist deviation can't reach optimum problem.
For addressing the above problem, the technical solution used in the present invention is: a kind of RF power amplifier intervalve matching circuit is provided, comprise the capacitor C 2 that is connected with the preamplifying circuit output, the capacitor C 3 that is connected with back level input amplifier and be connected inductance L 4 between capacitor C 2, C3 common port and the ground, described capacitor C 2, C3 common port are connected to control capacittance and shorting stub in addition, and the described control capacittance and the shorting stub other end are unsettled.
In order to reach matching effect preferably, conveniently to regulate, described control capacittance can be provided with one or more; Same described shorting stub also can be provided with one or one or more.
Compared with prior art, beneficial effect of the present invention is:
1, utilize intervalve matching circuit of the present invention to regulate the inter-stage matching network of radio-frequency power amplifier easily, thereby can compensate because of the deviation between caused component value of technology discreteness and the design load, to reach the optimization of radio-frequency power amplifier inter-stage matching network design;
2, described intervalve matching circuit can also effectively improve the harmonic wave and the efficient of radio-frequency power amplifier when inter-stage matching network is regulated.
Description of drawings
Fig. 1 is existing radio-frequency (RF) power amplifier circuit figure;
Fig. 2 is a RF power amplifier intervalve matching circuit schematic diagram of the present invention;
Fig. 3 is the implementation method schematic diagram of intervalve matching circuit of the present invention.
Embodiment
For the ease of it will be appreciated by those skilled in the art that the present invention is described in further detail below in conjunction with drawings and Examples.
Fig. 2 preferably implements circuit diagram for RF power amplifier intervalve matching circuit of the present invention.As figure, radio-frequency input signals RFin links to each other with the base stage of transistor Q1, the grounded emitter of Q1, collector electrode links to each other with capacitor C 1 with choke induction L1, the other end of L1 links to each other with power supply VCC1, the other end of capacitor C 1 and inductance L 3, capacitor C 2, C3, C4 and pad PAD3 link to each other, inductance L 3 other end ground connection, capacitor C 3, the other end of C4 respectively with PAD1, PAD2 links to each other, the other end of capacitor C 2 links to each other with the base stage of transistor Q2, the grounded emitter of Q2, collector electrode links to each other with choke induction L2 and output signal end RFout, and the other end of inductance L 2 links to each other with power supply VCC2.The implementation of this embodiment is transistor Q1, Q2 is used for radiofrequency signal is amplified, capacitor C 1, C2 and inductance L 3 are formed original inter-stage matching network, capacitor C 3, C4, PAD1, PAD2 and PAD3 form the inter-stage matching network regulating circuit, when the inductance L 3 of inter-stage matching network because the technology discreteness causes it to compare design load when less than normal, can utilize the capacitor C 3 in the inter-stage matching network regulating circuit, C4 is adjusted, concrete grammar as shown in Figure 3, the PAD1 of capacitor C 3 or C4 (or C3 and C4) and/or PAD2 are linked to each other with earth point GND on the substrate 3 by bonding line, the capacitance in parallel with coupling inductance L 3 be big more, and to be equivalent to the value increase of inductance L 3 big more, thereby compensating inductance L3 compares design load problem less than normal because of the technology discreteness causes it, thereby reaches the optimization of inter-stage matching network design; When the inductance L 3 of inter-stage matching network was bigger than normal compared to design load, the PAD3 of utilized chip inside bonding line inductance between the earth point GND to the substrate 3 compensated, thereby effectively reduced the inductance value of L3, to reach the inter-stage matching network optimization; This inter-stage matching network regulating circuit also has an effect, when control capacittance C3, C4 and even-order harmonic to the bonding line inductance resonance of substrate 3 in operating frequency, it can pair amplifier the harmonic impedance of output signal of Q1 regulate, thereby help to reduce the humorous efficient of improving radio-frequency power amplifier that involves of radio-frequency power amplifier.
Fig. 3 is the implementation method schematic diagram of intervalve matching circuit of the present invention.Number in the figure 1 is depicted as the adjusting part of described intervalve matching circuit, and label 2 is the radio-frequency power amplifier chip, and label 3 is a substrate.When needs are regulated the inter-stage matching network inductance value, by unsettled PAD1, the PAD2 of radio-frequency power amplifier internal regulation capacitor C 3, C4 linked to each other with earth point GND on the substrate 3, thereby utilize the shunt capacitance equivalence to increase the value of coupling inductance L 3, or by PAD3 is linked to each other with earth point GND on the substrate 3, thereby utilize bonding line inductance between the earth point GND of PAD3 to the substrate 3 to compensate the value of coupling inductance L 3, to guarantee the optimization of inter-stage matching network.
Above content only describes patent of the present invention with an embodiment, and it is fixed that actual inter-stage matching network regulating circuit need come according to physical circuit.
It should be noted that, conceive under the prerequisite its any minor variations of doing and be equal to replacement not breaking away from the present invention, all should belong to protection scope of the present invention.
Claims (3)
1. RF power amplifier intervalve matching circuit, comprise the capacitor C 2 that is connected with the preamplifying circuit output, the capacitor C 3 that is connected with back level input amplifier and be connected inductance L 4 between capacitor C 2, C3 common port and the ground, it is characterized in that: described capacitor C 2, C3 common port are connected to control capacittance and shorting stub in addition, and the described control capacittance and the shorting stub other end are unsettled.
2. RF power amplifier intervalve matching circuit according to claim 1 is characterized in that: described control capacittance is one or more.
3. RF power amplifier intervalve matching circuit according to claim 1 and 2 is characterized in that, described shorting stub is one or one or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200910042310A CN101753106A (en) | 2009-08-27 | 2009-08-27 | RF power amplifier intervalve matching circuit |
Applications Claiming Priority (1)
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CN200910042310A CN101753106A (en) | 2009-08-27 | 2009-08-27 | RF power amplifier intervalve matching circuit |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103051291A (en) * | 2012-12-31 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | Stage-matching-adjustable CMOS (complementary metal oxide semiconductor) ultra-wideband low-noise amplifier circuit |
CN104184419A (en) * | 2014-09-08 | 2014-12-03 | 王少夫 | Radio frequency power amplifier circuit |
CN107359863A (en) * | 2017-07-18 | 2017-11-17 | 中国电子科技集团公司第十三研究所 | Integrated amplifier |
CN108551332A (en) * | 2018-02-09 | 2018-09-18 | 厚元技术控股有限公司 | A kind of frequency and the adjustable power amplifier of bandwidth self-adaption and method of adjustment |
CN111654250A (en) * | 2020-06-10 | 2020-09-11 | 河源广工大协同创新研究院 | Millimeter wave self-adaptive amplitude limiter applied to radio frequency front-end receiver |
-
2009
- 2009-08-27 CN CN200910042310A patent/CN101753106A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103051291A (en) * | 2012-12-31 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | Stage-matching-adjustable CMOS (complementary metal oxide semiconductor) ultra-wideband low-noise amplifier circuit |
CN103051291B (en) * | 2012-12-31 | 2015-10-07 | 中国科学院上海微系统与信息技术研究所 | The CMOS ultra wide band low noise amplifier circuit that interstage matched is adjustable |
CN104184419A (en) * | 2014-09-08 | 2014-12-03 | 王少夫 | Radio frequency power amplifier circuit |
CN107359863A (en) * | 2017-07-18 | 2017-11-17 | 中国电子科技集团公司第十三研究所 | Integrated amplifier |
CN107359863B (en) * | 2017-07-18 | 2020-08-18 | 中国电子科技集团公司第十三研究所 | Integrated amplifier |
CN108551332A (en) * | 2018-02-09 | 2018-09-18 | 厚元技术控股有限公司 | A kind of frequency and the adjustable power amplifier of bandwidth self-adaption and method of adjustment |
CN108551332B (en) * | 2018-02-09 | 2022-05-10 | 沃勤科技有限公司 | Power amplifier with self-adaptive and adjustable frequency and bandwidth and adjusting method |
CN111654250A (en) * | 2020-06-10 | 2020-09-11 | 河源广工大协同创新研究院 | Millimeter wave self-adaptive amplitude limiter applied to radio frequency front-end receiver |
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Application publication date: 20100623 |