CN109167579A - A kind of efficient power amplifier of high-output power - Google Patents
A kind of efficient power amplifier of high-output power Download PDFInfo
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- CN109167579A CN109167579A CN201811101359.2A CN201811101359A CN109167579A CN 109167579 A CN109167579 A CN 109167579A CN 201811101359 A CN201811101359 A CN 201811101359A CN 109167579 A CN109167579 A CN 109167579A
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- 230000005611 electricity Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
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- 239000010410 layer Substances 0.000 description 19
- 230000003071 parasitic effect Effects 0.000 description 11
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- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/61—Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage
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- Computer Networks & Wireless Communication (AREA)
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Abstract
The invention discloses a kind of efficient power amplifiers of high-output power to be made of using the HBT stacked structure based on SiGe technique three layers of HBT series stack；Including No. two HBT transistors, No. three HBT transistors, No. four HBT transistors and resistance pressure-dividing network；No. two HBT emitter ground connection, collector connect No. three HBT emitters, and base stage is separately connected No. two capacitances and No.1 choke induction；No. three HBT transistor collectors connect No. four HBT emitters, and base stage connects No. three biasing resistors and No. two ground capacities, and No. two inductance and No. three capacitances are connected between No. three HBT transistor bases and emitter；No. four HBT transistor bases connect No. three inductance and No. four capacitances with transmitting interpolar；No. four HBT transistor bases connect No. two biasing resistors and No. three ground capacities；No. four HBT transistor collector connection No.1 resistance, No. two choke inductions and No. five capacitances.
Description
Technical field
The present invention relates to wireless communication power amplifier technique fields, and more specifically, it relates to a kind of high-output powers
Efficient power amplifier.
Background technique
It is higher and higher to the performance requirement of communication transceiver recently as the fast development of communications industry, radio-frequency power
Amplifier is the vital hardware module positioned at transmitter end, many indexs such as output power, efficiency, the linearity etc.
It is critically important to wirelessly communicating, therefore its design is particularly critical [1].The output power of radio-frequency power amplifier determines transmitting range
Length, the efficiency of radio-frequency power amplifier determine its operation and maintenance cost height.In order to realize high performance radio frequency
Although function amplifier is able to achieve height using such technique both at home and abroad frequently with three-five compound technique such as GaAs or GaN etc.
Output power but its high production cost, product yield is low and is not easy to integrate, and is unfavorable for being mass produced and apply.For passing
Although the CMOS technology of system has the advantages of low cost, high integration, breakdown voltage transistor is low, power consumption is high, the linearity
Difference, because therefore its high frequency performance difference should not realize high-output power and high efficiency in high frequency.
Currently, there are breakdown potentials to force down due to the hetero-junction bipolar transistor (HBT) based on SiGe technique, it is lesser most
The defects of high current density [2], therefore there are certain difficulties when designing the amplifier of high-output power.In order to solve on piece function
The problem of high-power output of rate amplifier, the mode generallyd use have the methods of power combing, parallel transistor number.But meeting
There are circuit structure complexity, the larger problems of chip occupying area.
Based on the above technical problem, for the present invention under the premise of saving chip area, design is using based on SiGe technique
Stacked structure [3] design power amplifier of heterojunction bipolar transistor (HBT), and the electricity for offsetting parasitic capacitance is added between grade
Line structure corrects phase deviation caused by parasitic capacitance with this, to further increase output power and efficiency.
[bibliography]
[1] Chi Baoyong, Yu Zhiping, stone, which is grasped, learns the analysis of RF IC and the publication of design [M] Tsinghua University
Society .2006.
[2]Michael Chang,“A 26to 40GHz Wideband SiGe Balanced Power Amplifier
IC,”IEEE Radio Frequency Integrated Circuits(RFIC)Symposium,Honolulu,pp.729-
732,3-5June 2007.
[3]David Fritsche,Robert Wolf,and Frank Ellinger,“Analysis and Design
of a Stacked Power Amplifier With Very High Bandwidth,”IEEE Transactions on
Microwave Theory and Techniques,vol.60,no.10,pp.3223-3231,Oct.2012.
Summary of the invention
Purpose of the invention is to overcome the shortcomings in the prior art, provides one kind and is related to radio-frequency power amplifier sum aggregate
At the efficient power amplifier of the high-output power of circuit field, high-output power is realized using transistor stack structure, is subtracted
Small chip area；In millimeter wave band, effectively solves the problems, such as stacked transistors interlayer mismatch, greatly improve efficiency；It uses
SiGe technique is designed, and is suitable for higher operational frequency, and is conducive to integrated.
The purpose of the present invention is what is be achieved through the following technical solutions.
The efficient power amplifier of high-output power of the invention, using the HBT stacked structure based on SiGe technique, by
Three layers of HBT series stack composition；Including No. two HBT transistors, No. three HBT transistors, No. four HBT transistors and electric resistance partial pressure net
Network, the resistance pressure-dividing network are made of the No.1 resistance, No. two resistance and No. three resistance being sequentially connected in series, and No. three resistance connects
Ground；
No. two HBT emitters ground connection, collector connect No. three HBT emitters, and base stage connects respectively
It is connected to No. two capacitances and No.1 choke induction, described No. two capacitance one end connect No. two HBT transistor bases, another
Connection signal input port is held, No.1 choke induction one end connects No. two HBT transistor bases, and the other end connects No. two electricity
Potential source；
No. three HBT transistor collectors connect No. four HBT emitters, No. three HBT transistor bases
No. two inductance and No. three capacitances being serially connected are connected between emitter, No. three HBT transistor bases also divide
It is not connected with No. three biasing resistors and No. two ground capacities, described No. three biasing resistor one end connect No. three HBT transistor bases,
The other end is connected between No. two resistance and No. three resistance, and described No. two ground capacity one end connect No. three HBT transistor bases,
Other end ground connection；
No. three inductance and No. four blocking electricity being serially connected are connected between No. four HBT transistor bases and emitter
Hold；No. two biasing resistors and No. three ground capacities, No. two biased electricals is also respectively connected in No. four HBT transistor bases
It hinders one end and connects No. four HBT transistor bases, the other end is connected between No.1 resistance and No. two resistance, No. three ground connection electricity
Hold one end and connects No. four HBT transistor bases, other end ground connection；No. four HBT transistor collectors are separately connected No.1 electricity
Resistance, No. two choke inductions and No. five capacitances, described No. two choke induction one end connect No. four HBT transistor collectors, separately
One end connects No.1 voltage source, and described No. five capacitance one end connect No. four HBT transistor collectors, other end connection signal
Output port.
The No.1 choke induction and No. two choke inductions are all made of quarter-wave transmission line, the No.1 electricity
Sense, No. two inductance and No. three inductance are all made of transmission line.
No. two HBT transistors are set to bottom, and No. three HBT transistors are set to middle layer, No. four HBT crystalline substances
Body pipe is set to upper layer.
Compared with prior art, the beneficial effects brought by the technical solution of the present invention are as follows:
The present invention carries out Design of RF Power Amplifier using the hetero-junctions two-stage transistor (HBT) based on SiGe technique,
Suitable for higher working frequency.By the benefit that transmission line is added between each layer transistor base and emitting stage of stacked structure
Compensation structure, the influence of transistor parasitics, realizes the efficient power amplifier of high-output power under effective compensation high frequency.
Circuit structure of the present invention is simple, effectively reduces chip area, has saved circuit cost
Detailed description of the invention
Fig. 1 is single transistor shunt inductance line partial schematic.
Fig. 2 is the circuit diagram of the efficient power amplifier of high-output power of the present invention.
Appended drawing reference: R1 No.1 biasing resistor, No. bis- biasing resistors of R5, No. tri- biasing resistors of R6, R2 No.1 resistance, R3 bis-
Number resistance, No. tri- resistance of R4, C1 No.1 ground capacity, No. bis- ground capacities of C6, No. tri- ground capacities of C7, C2 No.1 blocking electricity
Hold, No. bis- capacitances of C3, No. tri- capacitances of C4, No. tetra- capacitances of C5, No. five capacitances of C8, Q1 No.1 HBT crystal
Pipe, No. bis- HBT transistors of Q2, No. tri- HBT transistors of Q3, No. tetra- HBT transistors of Q4, TL1 No.1 inductance, No. bis- inductance of TL3,
No. tri- inductance of TL4, TL2 No.1 choke induction, No. bis- choke inductions of TL5, VCC No.1 voltage source, No. bis- voltage sources of Vb.
Specific embodiment
In order to illustrate more clearly of technical solution of the present invention, the present invention will be further explained below with reference to the attached drawings.It is right
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is single transistor shunt inductance line partial schematic, including No.1 biasing resistor R1, No.1 ground capacity
C1, No.1 capacitance C2, No.1 inductance TL1 and No.1 HBT transistor Q1.It is forced down, most to solve SiGe technique breakdown potential
The small limitation of high current density, the present invention use the skill upgrading power amplifier output power of transistor stack, use simultaneously
The method that inductance is connected between each layer transistor base emitter effectively reduces the influence of transistor parasitic capacitance, thus into one
Step improves power output and efficiency.As shown in Figure 2.
The efficient power amplifier of high-output power of the invention, using the HBT (heterogenous dual-pole based on SiGe technique
Transistor) stacked structure, it is stacked and is formed by three layers of HBT series connection (collector emitter of i.e. three layers HBT is connected), increase whole put
The value of the optimal impedance of big device, to reduce difficulty of matching.Stacked structure is powered using electric resistance partial pressure mode, makes every layer
HBT is biased in AB class, the work that the method plays in practical domain and saves direct current supply bonding pad number, reduces chip area
With.Each layer transistor base connection resistance makes voltage be converted to electric current power supply simultaneously.
The efficient power amplifier of high-output power of the invention, including No. two HBT transistor Q2, No. three HBT crystal
Pipe Q3, No. four HBT transistor Q4 and resistance pressure-dividing network.No. two HBT transistors Q2 is set to bottom, No. three HBT
Transistor Q3 is set to middle layer, and No. four HBT transistors Q4 is set to upper layer.The resistance pressure-dividing network is by being sequentially connected in series
No.1 resistance R2, No. two resistance R3 and No. three resistance R4 are constituted, and the voltage of No.1 voltage source VCC is assigned in each layer base stage, is given
Three HBT transistors provide bias voltage.No. four HBT transistor Q4 collectors of resistance pressure-dividing network one end connection, i.e., one
Number No. four HBT transistor Q4 collectors of resistance R2 connection, other end ground connection, i.e. No. three resistance R4 are grounded GND.
No. two HBT transistor Q2 emitter is grounded GND, and collector connects No. three HBT transistor Q3 emitters, base stage
No. two capacitance C3 and No.1 choke induction TL2 are connected separately with, described No. two one end capacitance C3 connect No. two HBT crystalline substances
Body pipe Q2 base stage, other end connection signal input port RFin, described one end No.1 choke induction TL2 connects No. two HBT crystal
Pipe Q2 base stage, the other end connect No. two voltage source Vb.
No. three HBT transistor Q3 collector connects No. four HBT transistor Q4 emitters, No. three HBT transistors
No. two inductance TL3 being serially connected and No. three capacitance C4, No. three HBT crystal are connected between Q3 base stage and emitter
No. three biasing resistor R6 and No. two ground capacity C6, No. three one end biasing resistor R6 connection is also respectively connected in pipe Q3 base stage
No. three HBT transistor Q3 base stages, the other end are connected between No. two resistance R3 and No. three resistance R4, No. two ground capacity C6
One end connects No. three HBT transistor Q3 base stages, and the other end is grounded GND.
No. three inductance TL4 being serially connected and No. four are connected between No. four HBT transistor Q4 base stage and emitter
Capacitance C5.No. two biasing resistor R5 and No. three ground capacity C7 are also respectively connected in No. four HBT transistor Q4 base stage,
Described No. two one end biasing resistor R5 connect No. four HBT transistor Q4 base stages, and the other end is connected to No.1 resistance R2 and No. two electricity
It hinders between R3, described No. three one end ground capacity C7 connect No. four HBT transistor Q4 base stages, and the other end is grounded GND.Described No. four
HBT transistor Q4 collector is separately connected No.1 resistance R2, No. two choke induction TL5 and No. five capacitance C8.Described No. two
The one end choke induction TL5 connects No. four HBT transistor Q4 collectors, and the other end connects No.1 voltage source VCC, No.1 voltage source
VCC is the power supply of entire circuit by No. two choke induction TL5, and signal is flowed into from No. two capacitance C3, eventually by No. four HBT
The collector of transistor Q4 passes through No. five capacitance C8 outflows.Described No. five one end capacitance C8 connect No. four HBT crystal
Pipe Q4 collector, other end connection signal output port RFout.
Wherein, the No.1 choke induction TL2 and No. two choke induction TL5 are all made of quarter-wave transmission line,
Play the role of logical direct current resistance exchange, the No.1 inductance TL1, No. two inductance TL3 and No. three inductance TL4 are all made of transmission line.
No. two ground capacity C6, No. three ground capacity C7 are for adjusting optimal input impedance size and having each floor current collection of certain adjusting
The effect of the consistency of pole output voltage phase.No. two inductance TL3, No. three inductance TL4 are respectively used to reduce No. three HBT transistors
The influence of parasitic capacitance between Q3, No. four HBT transistor Q4 base stages and emitter.
The supply voltage of No.1 voltage source VCC divides the HBT folded for every layer heap by resistance pressure-dividing network and provides suitably
Quiescent point；The base stage of upper one layer of HBT is connected to by serving as the transmission line of inductance effect with capacitance in stacked structure
On the collector of next layer of HBT.
With the raising of working frequency, the enhancing of the non-linear effects as caused by the parasitic capacitance of transistor causes base stage electric
Pressure distortion, so as to cause the collector current wave distortion of output, for effective compensation parasitic capacitance bring shadow in high frequency
It rings, adjusts the phase of stacked structure and motor output voltage, guarantee that the output voltage phase of every layer of HBT is consistent, make top layer HBT
Collector output voltage swing it is maximum, to realize high-power output and high efficiency, using shown in figure two, base stage and emitting stage
Between connection inductance to parasitic capacitance Cbe formed series resonant network, gained equivalent capacity Ceq be much smaller than parasitic capacitance
Cbe, equivalent capacity and parasitic capacitance Cbe and transmission line inductance L (No. tri- No.1 inductance TL1, No. two inductance TL3, TL4 inductance) it
Between shown in relationship such as formula (1):
From formula (1) as can be seen that substantially reducing influence of the parasitic capacitance to circuit after the structure is added.It is passing simultaneously
Capacitance is added in defeated line branch road, and each layer transistor base supply current is made not flow directly into trunk roads.Guarantee each layer
The phase of output voltage is identical, to realize maximum power output.
Further, since the big inductance for serving as choking effect occupies, chip area is big, and layout is difficult, therefore the present invention uses four
The transmission line of/mono- wavelength replaces, and is connected with the power supply end, and realizes the effect of logical direct current resistance exchange, and has in high frequency treatment
Reduce chip area to effect.
Although function and the course of work of the invention are described above in conjunction with attached drawing, the invention is not limited to
Above-mentioned concrete function and the course of work, the above mentioned embodiment is only schematical, rather than restrictive, ability
The those of ordinary skill in domain under the inspiration of the present invention, is not departing from present inventive concept and scope of the claimed protection situation
Under, many forms can also be made, all of these belong to the protection of the present invention.
Claims (3)
1. a kind of efficient power amplifier of high-output power, which is characterized in that stack knot using the HBT based on SiGe technique
Structure is made of three layers of HBT series stack；Including No. two HBT transistors (Q2), No. three HBT transistors (Q3), No. four HBT crystal
Manage (Q4) and resistance pressure-dividing network, the resistance pressure-dividing network by be sequentially connected in series No.1 resistance (R2), No. two resistance (R3) and
No. three resistance (R4) are constituted, and No. three resistance (R4) is grounded (GND)；
No. two HBT transistors (Q2) emitter is grounded (GND), and collector connects No. three HBT transistor (Q3) emitters, base
Pole is connected separately with No. two capacitances (C3) and No.1 choke induction (TL2), the connection of No. two capacitances one end (C3)
No. two HBT transistor (Q2) base stages, other end connection signal input port (RFin), described No.1 choke induction (TL2) one end
No. two HBT transistor (Q2) base stages are connected, the other end connects No. two voltage sources (Vb)；
No. three HBT transistors (Q3) collector connects No. four HBT transistor (Q4) emitters, No. three HBT transistors
(Q3) it is connected with No. two inductance (TL3) and No. three capacitances (C4) being serially connected between base stage and emitter, described No. three
No. three biasing resistors (R6) and No. two ground capacities (C6), No. three biasings is also respectively connected in HBT transistor (Q3) base stage
Resistance one end (R6) connects No. three HBT transistor (Q3) base stages, and the other end is connected to No. two resistance (R3) and No. three resistance (R4)
Between, No. two ground capacities one end (C6) connects No. three HBT transistor (Q3) base stages, and the other end is grounded (GND)；
No. four HBT transistors (Q4) are connected with No. three inductance (TL4) being serially connected and No. four between base stage and emitter
Capacitance (C5)；No. two biasing resistors (R5) and No. three ground connection are also respectively connected in No. four HBT transistors (Q4) base stage
Capacitor (C7), No. two biasing resistors one end (R5) connect No. four HBT transistor (Q4) base stages, and the other end is connected to No.1 electricity
It hinders between (R2) and No. two resistance (R3), No. three ground capacities one end (C7) connects No. four HBT transistor (Q4) base stages, separately
One end is grounded (GND)；No. four HBT transistors (Q4) collector is separately connected No.1 resistance (R2), No. two choke inductions
(TL5) and No. five capacitances (C8), No. two choke inductions one end (TL5) connect No. four HBT transistor (Q4) collectors,
The other end connects No.1 voltage source (VCC), and No. five capacitances one end (C8) connects No. four HBT transistor (Q4) current collections
Pole, other end connection signal output port (RFout).
2. the efficient power amplifier of high-output power according to claim 1, which is characterized in that the No.1 chokes
Inductance (TL2) and No. two choke inductions (TL5) are all made of quarter-wave transmission line, the No.1 inductance (TL1), No. two
Inductance (TL3) and No. three inductance (TL4) are all made of transmission line.
3. the efficient power amplifier of high-output power according to claim 1, which is characterized in that No. two HBT
Transistor (Q2) is set to bottom, and No. three HBT transistors (Q3) are set to middle layer, and No. four HBT transistors (Q4) set
It is placed in upper layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811101359.2A CN109167579A (en) | 2018-09-20 | 2018-09-20 | A kind of efficient power amplifier of high-output power |
| LU101196A LU101196B1 (en) | 2018-09-20 | 2019-04-30 | A high-output-power and high-efficiency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811101359.2A CN109167579A (en) | 2018-09-20 | 2018-09-20 | A kind of efficient power amplifier of high-output power |
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| CN109167579A true CN109167579A (en) | 2019-01-08 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109951162A (en) * | 2019-03-08 | 2019-06-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
| CN111147033A (en) * | 2020-01-02 | 2020-05-12 | 尚睿微电子（上海）有限公司 | Power amplifier and electronic equipment based on HBT circuit structure |
| CN112929000A (en) * | 2019-12-05 | 2021-06-08 | 株式会社村田制作所 | Power amplifying circuit |
| CN113472303A (en) * | 2020-03-30 | 2021-10-01 | 株式会社村田制作所 | Power amplifying element |
| CN112929000B (en) * | 2019-12-05 | 2024-10-22 | 株式会社村田制作所 | Power amplifying circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109951162A (en) * | 2019-03-08 | 2019-06-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
| CN112929000A (en) * | 2019-12-05 | 2021-06-08 | 株式会社村田制作所 | Power amplifying circuit |
| CN112929000B (en) * | 2019-12-05 | 2024-10-22 | 株式会社村田制作所 | Power amplifying circuit |
| CN111147033A (en) * | 2020-01-02 | 2020-05-12 | 尚睿微电子（上海）有限公司 | Power amplifier and electronic equipment based on HBT circuit structure |
| CN113472303A (en) * | 2020-03-30 | 2021-10-01 | 株式会社村田制作所 | Power amplifying element |
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