CN206259910U - A kind of power amplifier of distributed three stacked structure for considering Miller effect - Google Patents
A kind of power amplifier of distributed three stacked structure for considering Miller effect Download PDFInfo
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- CN206259910U CN206259910U CN201621159951.4U CN201621159951U CN206259910U CN 206259910 U CN206259910 U CN 206259910U CN 201621159951 U CN201621159951 U CN 201621159951U CN 206259910 U CN206259910 U CN 206259910U
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Abstract
The utility model discloses a kind of power amplifier of distributed three stacked structure for considering Miller effect,Amplify network including distributed three stacking,Consider the grid artificial transmission line of Miller effect,Consider the drain electrode artificial transmission line of Miller effect,First bias voltage and the second bias voltage,The utility model core architecture amplifies network using distributed three stacking,Distributed three stacking amplifies network at least by three three transistor stack structure compositions,Simultaneously,The utility model considers the influence of the Miller effect for the equivalent capacity of artificial transmission line of three transistor stack structures,Substantially increase the accuracy of circuit design,Reduce the difficulty of circuit later stage debugging,So that whole power amplifier obtains good broadband power fan-out capability and power gain ability,Avoid the low breakdown voltage characteristic of integrated circuit technology,Improve the Stability and dependability of circuit.
Description
Technical field
The utility model is related to field-effect transistor radio-frequency power amplifier and integrated circuit fields, especially for ultra-wide
A kind of high efficiency of the transmitter module application with transceiver end, high-output power, the distributed power amplifier of high-gain.
Background technology
As the military electronics such as electronic warfare, software radio, ultra-wideband communications, WLAN (WLAN) are resisted and are led to
Letter, the fast development in commercial communication market, radio frequency front-end transceiver also develop to high-performance, highly integrated, low-power consumption direction.Cause
The radio frequency of the urgent demand emitter in this market and microwave power amplifier have ultra wide band, high-output power, high efficiency, it is low into
The performance such as this, and integrated circuit is exactly expected to meet the key technology of the market demand.
However, when radio frequency is realized with microwave power amplifier chip circuit using integrated circuit technology design, its performance
Certain restriction, major embodiment are received with cost：
(1) high-power high-efficiency amplifying power is limited：The grid of transistor are long shorter and shorter in semiconductor technology, thus bring
Low breakdown voltage and knee-point voltage high, so as to limiting the power capacity of one-transistor.It is past in order to obtain power capabilities
It is past to need multichannel transistor power to synthesize, but because the energy loss of multichannel synthesis network causes the efficiency ratio of power amplifier
It is relatively low, therefore high power, high efficiency ability are poor.
(2) ultra-wideband high power amplifying power is limited：Multiple transistor power synthesis are accomplished by meet high power index,
But the load impedance of multichannel synthesis is substantially reduced, so as to result in impedance transformation ratio very high；It is real under high impedance conversion ratio
Existing broadband character is greatly challenge.
The circuit structure of common ultra-wideband high power amplifier has a lot, most typically traditional distributed amplifier,
But, the requirement that traditional distributed amplifier will simultaneously meet parameters is very difficult, is primarily due to：
1. in traditional distributed power amplifier, core amplifying circuit is multiple single field-effect transistor FET
(field-effect transistor) using distributed air-defense arrangement by the way of realize, due to single field-effect transistor its
Power gain is relatively low, optimum impedance is relatively low, isolation is poor therefore also causes reflection characteristic to deteriorate, so as to reduce synthesis effect
Rate；
2. it is simple in order to analyze in the design of traditional distributed amplifier, often have ignored shadow of the Miller capacitance for circuit
Ring, so as to cause to be needed after circuit structure design is complete substantial amounts of work to carry out circuit debugging, consume substantial amounts of manpower and materials, drop
Low circuit layout efficiency；
3. additionally, in order to reduce influence of the Miller effect for circuit, also there is distributed using Cascode pair transistors
Structure for amplifying, but although Cascode pair transistors increased circuit isolation, cannot but improve the indexs such as power gain,
The optimum impedance matching between Cascode pair transistors cannot be realized, so as to reduce characteristics of output power.
It can thus be seen that the ultra-wide band radio-frequency Designing power amplifier difficult point based on integrated circuit technology is：Ultra wide band
Lower high-power output, high power gain difficulty are larger；The distributed air-defense of traditional single transistor structure or Cascode transistors
There are many limitation in structure.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of distributed three stacked structure for considering Miller effect
Power amplifier, the advantage of single transistor structure amplifier and distributed amplifier is combined, with Gao Gong under ultra wide band
Rate fan-out capability, high power gain, good input, output matching characteristic, and low cost and other advantages.
The technical scheme that the utility model solves above-mentioned technical problem is as follows：A kind of distributed three heap for considering Miller effect
The power amplifier of stack structure, including grid artificial transmission line, the consideration that distributed three stacking is amplified network, considers Miller effect
The drain electrode artificial transmission line of Miller effect, the first bias voltage and the second bias voltage, distributed three stacking amplify network
By k three transistor stack structure compositions, wherein k is more than or equal to 3, the three transistor stacks structure by three transistors according to
Source drain is connected to stack and constitutes,
The source ground of the transistor of the bottom of the three transistor stacks structure, grid is by RC stabilization electricity in parallel
Road is connected to the grid artificial transmission line of the consideration Miller effect,
The grid of the transistor in the intermediate layer of the three transistor stacks structure is connected to described first by feed resistance
Bias voltage, meanwhile, the grid connects compensation circuit；
The grid of the transistor of the superiors of the three transistor stacks structure is connected to described second by divider resistance
Bias voltage, meanwhile, the grid connects compensation circuit；Drain electrode is connected to the drain electrode artificial transmission of the consideration Miller effect
Line.
The beneficial effects of the utility model are：The utility model core architecture amplifies network using distributed three stacking, point
The stacking of cloth three amplifies network at least by three three transistor stack structure compositions, and three transistor stack structures are by three transistors
Constituted according to the source drain stacking that is connected, meanwhile, the utility model consider the Miller effect of three transistor stack structures for
The influence of the equivalent capacity of artificial transmission line, improves the accuracy of circuit design, reduces the difficulty of circuit later stage debugging, makes
Whole power amplifier obtains good broadband power fan-out capability and power gain ability, it is to avoid integrated circuit technology
Low breakdown voltage characteristic, improve circuit Stability and dependability.
On the basis of above-mentioned technical proposal, the utility model can also do following improvement.
Further, the grid compensation circuit of the transistor of the transistor in the intermediate layer and the superiors compensates electricity by grid
Resistance is connected ground connection composition with grid compensating electric capacity.
Using the beneficial effect of above-mentioned further scheme, the grid compensating electric capacity of three transistor stack structures is smaller capacitance
Electric capacity, the synchronous hunting for realizing grid voltage can improve power output, improve isolation characteristic, realize that three stackings are brilliant
Impedance matching between body pipe, while obtaining good high frequency characteristics；Stabilizing circuit.
Further, the grid artificial transmission line for considering Miller effect is by grid absorbing load, grid capacitance, grid
Pole feeds inductance, k+1 gate transmission line equivalent inductance and k gate transmission line equivalent capacity and constitutes.
Using the beneficial effect of above-mentioned further scheme be consider three transistor stack structures Miller effect for people
The influence of the equivalent capacity of work transmission line, substantially increases the accuracy of circuit design, reduces the difficulty of circuit later stage debugging.
Further, the drain electrode artificial transmission line for considering Miller effect is by drain electrode absorbing load, drain electrode capacitance, leakage
Pole feeds inductance, k+1 drain transmission line equivalent inductance and k drain transmission line equivalent capacity and constitutes.
Using the beneficial effect of above-mentioned further scheme be consider three transistor stack structures Miller effect for people
The influence of the equivalent capacity of work transmission line, substantially increases the accuracy of circuit design, reduces the difficulty of circuit later stage debugging.
Further, it is active amplification network that distributed three stacking amplifies network, it is considered to which the grid of Miller effect is artificial
The drain electrode artificial transmission line of transmission line and consideration Miller effect is passive network.
Using the beneficial effect of above-mentioned further scheme, design accuracy is improved, shorten the design cycle.
Brief description of the drawings
Fig. 1 is the utility model power amplifier theory diagram；
Fig. 2 is three transistor stack structural principle block diagrams in the utility model；
Fig. 3 is the utility model power amplifier circuit figure；
Corresponding to the circuit theory diagrams of three transistor stack structures in Fig. 4 the utility model；
Fig. 5 is the circuit theory diagrams that the utility model transistor simplifies small signal equivalent model.
Specific embodiment
Principle of the present utility model and feature are described below in conjunction with accompanying drawing, example is served only for explaining this practicality
It is new, it is not intended to limit scope of the present utility model.
As shown in Figure 1 and Figure 2, put the invention provides a kind of power of distributed three stacked structure for considering Miller effect
Big device, be it is a kind of use distributed three stackings amplification network be the ultra-wide band radio-frequency power amplifier of core, using integrated circuit
Technique is designed, the distribution three stacking amplify network be active electric network, it is considered to the grid artificial transmission line of Miller effect and
The drain electrode artificial transmission line for considering Miller effect is passive network.
The power amplifier, including distributed three stacking is amplified network, the grid artificial transmission line of consideration Miller effect, is examined
Drain electrode artificial transmission line, the first bias voltage and the second bias voltage for considering Miller effect, distributed three stacking amplify net
, at least by three three transistor stack structure compositions, the three transistor stacks structure is by three transistors according to source drain for network
The stacking that is connected is constituted,
The source ground of the transistor of the bottom of the three transistor stacks structure, grid is by RC stabilization electricity in parallel
Road CgkAnd RgkThe grid artificial transmission line of the consideration Miller effect is connected to,
The grid of the transistor in the intermediate layer of the three transistor stacks structure passes through feed resistance RgbkIt is connected to described
One bias voltage Vgg, meanwhile, the grid connection is connected the compensation that ground connection constitutes with grid compensating electric capacity by grid compensation resistance
Circuit CggkAnd Rggk；
The grid of the transistor of the superiors of the three transistor stacks structure passes through divider resistance RggbkIt is connected to described
Second bias voltage Vggg, meanwhile, the grid connection is connected the benefit that ground connection constitutes with grid compensating electric capacity by grid compensation resistance
Repay circuit CgggkAnd Rgggk；Drain electrode is connected to the drain electrode artificial transmission line of the consideration Miller effect.
As shown in Figure 3, Figure 4, it is based on 3 × k field-effect transistor, k that distributed three stacking of the invention amplifies network
3 are generally higher than equal to, three transistor stack structures are made up of three transistors according to the connected stacking of source drain, brilliant by k three
Distributed three stacking of body pipe stacked structure composition amplifies network, it is ensured that whole circuit can have larger ultra wide band power output, real
The amplification of existing radiofrequency signal.
The grid artificial transmission line for considering Miller effect is by grid absorbing load Rgload, grid capacitance Cgload
And Cg, grid feed inductance Lg, k+1 gate transmission line equivalent inductance LgkWith k gate transmission line equivalent capacity CinkConstitute,
It is used to realize the functions such as matching, the biasing of grid artificial transmission line of amplifier；The drain electrode for considering Miller effect is manually passed
Defeated line is by drain electrode absorbing load Rdload, drain electrode capacitance Cdload、Cd, drain electrode feed inductance Ld, k+1 drain transmission line it is equivalent
Inductance LdkWith k drain transmission line equivalent capacity CoutkConstitute, be used to realize the matching, partially of the drain electrode artificial transmission line of amplifier
The function such as put.
It is illustrated in figure 5 in the utility model circuit and considers the transistor of Miller effect and simplify small-signal model, this is small
The key circuit parameters that signal model is used in the analysis and solution power amplifier, specific method for solving is：
The grid compensating electric capacity of the transistor in the intermediate layer of the three transistor stacks structure is Cggk：
Wherein, CgsIt is transistor gate-source capacitance, CgdFor transistor gate-drain parasitic capacitances are Miller capacitance, unit is pF；
gmIt is transistor transconductance, unit is mS, Zopt=Ropt+jXoptIt is transistor optimum load impedance, unit is Ω.
The grid compensating electric capacity of the transistor of the superiors of the three transistor stacks structure is Cgggk：
Wherein, CgsIt is transistor gate-source capacitance, CgdFor transistor gate-drain parasitic capacitances are Miller capacitance, unit is pF；
gmIt is transistor transconductance, unit is mS, Zopt=Ropt+jXoptIt is transistor optimum load impedance, unit is Ω.
The equivalent input capacitance of the grid artificial transmission line for considering Miller effect is Cintk：
Cintk=(A2+ω2B2)/(ω2BY0-(B0+ω(Cgd+Cds))Aω)
The equivalent output capacitance of the drain electrode artificial transmission line for considering Miller effect is Coutk：
Coutk≈Cds/3
Wherein, A=ω2Cgd 2-ω(B0+ω(Cgd+Cds))(Cgs+Cgd), .B=(Cgs+Cgd)Y0+Cgdgm
Yopt=Y0+jB0=1/Zopt, CgsIt is transistor gate-source capacitance, CgdFor transistor gate-drain parasitic capacitances are Miller electricity
Hold, unit is pF；gmIt is transistor transconductance, unit is mS；Zopt=Ropt+jXoptIt is transistor optimum load impedance, unit
It is Ω；ω is fundamental wave angular frequency, and unit is rad/s；CdsIt is transistor drain source capacitance.
It is defeated in the RC stabilizing circuits in parallel of the grid connection of the transistor of the bottom of the three transistor stacks structure
Enter coupled capacitor for Cgk：
Wherein, CintkTo consider the gate transmission line equivalent capacity of the grid artificial transmission line of Miller effect, CoutkTo consider
The drain transmission line equivalent capacity of the drain electrode artificial transmission line of Miller effect.
The drain electrode of the equivalent inductance and consideration Miller effect of the grid artificial transmission line for considering Miller effect is manually passed
The equivalent inductance of defeated line is respectively LgkAnd Ldk
Wherein, k is integer, k >=3；Z0It is the characteristic impedance of microstrip line, generally 50 Ω；CoutkTo consider Miller effect
The drain transmission line equivalent capacity of drain electrode artificial transmission line.
Based on foregoing circuit parametric solution method, by structure adjusting transistor Md1~Mdk、Mm1~MmkAnd Mu1~Muk
Size, artificial transmission line's inductance Lg1~Lg(k+1)And Ld1~Ld(k+1) size, compensating electric capacity Cgg1~CggkWith
Cggg1~CgggkSize etc., whole amplifier circuit of the present utility model can be made to realize being input into ultra wide band and export
Good impedance matching, high power gain, good power gain flatness.
The course of work of the present utility model is：Radio-frequency input signals enters circuit by input IN, by being input into blocking
Coupled capacitor Cg, enters grid artificial transmission line Lg in the way of voltage's distribiuting formulak、Lg(k+1)And Cink, subsequently into CgkAnd Rgk
The grid RC stabilizing networks of composition, then enter the transistor that three transistor stacks amplify the bottom of network with voltage's distribiuting formula
MdkGrid, then distributed form is from transistor MdkDrain electrode output, into transistor MmkSource electrode, then from intermediate layer
Transistor MmkDrain electrode output, enter back into the transistor Mu of the superiorskSource electrode, then from transistor MukDrain electrode output,
Enter drain electrode artificial transmission line Ld in the way of voltage's distribiuting formulak、Ld(k+1)And Coutk, then by exporting blocking coupled capacitor
Cd, completes signal power and amplifies into output end OUT.
Based on foregoing circuit analysis, the utility model proposes consideration Miller effect distributed three stacked structure power
Amplifier is with the difference of the conventional amplifier architecture based on integrated circuit technology：
1. core architecture amplifies network using distributed three stacking：
Three transistor stacks are very different in structure with traditional one-transistor, do not repeat herein；Three is brilliant simultaneously
Body pipe is stacked also has difference with the distributed amplifier of the composition such as new double gate transistor, and three transistor stack structures are three
The complex network that transistor and other elements are constituted, and double-gated transistor is single component.
Three transistor stacks have at 2 points with the difference of tradition Cascode transistors：(1) attachment structure of transistor
On, three transistor stacks are that three transistor drain source electrodes are sequentially concatenated, and Cascode structures are two transistor series connections；(2)
In the grid compensating electric capacity of stacking, the grid compensating electric capacity of three transistor stacks is the less electric capacity of capacitance, for realizing grid
The synchronous hunting of voltage, and the piled grids compensating electric capacity of tradition Cascode transistors is the larger electric capacity of capacitance, for realizing
The AC earth of grid.
2. grid and the drain electrode artificial transmission line of Miller effect are considered：
Conventional method for designing often ignores Miller effect, directly regards the gate-source capacitance Cgs and drain source capacitance Cds of transistor
It is the equivalent capacity of artificial transmission line, so processes often underestimation equivalent capacity, so as to causes the circuit design later stage to need
Wanting a large amount of manpowers carries out circuit debugging；The utility model considers the Miller effect of three transistor stacks for artificial transmission line's
The influence of equivalent capacity, substantially increases the accuracy of circuit design, reduces the difficulty of circuit later stage debugging.
In the whole distributed power amplifier circuit based on transistor stack technology, the size of transistor is straight with other
After current feed resistance, the size of compensating electric capacity are the indices such as gain, bandwidth and power output for considering whole circuit
Determine, by the layout design and rational deployment in later stage, required indices can be better achieved, realize in ultra-wide
High-power output ability, high power gain under SNNP, good input and output matching properties, chip area be small and cost
It is low.
Preferred embodiment of the present utility model is the foregoing is only, is not used to limit the utility model, it is all in this practicality
Within new spirit and principle, any modification, equivalent substitution and improvements made etc. should be included in guarantor of the present utility model
Within the scope of shield.
Claims (5)
1. a kind of power amplifier of distributed three stacked structure for considering Miller effect, it is characterised in that including distributed three
It is stacking amplifies network, the grid artificial transmission line for considering Miller effect, consider Miller effect drain electrode artificial transmission line, first inclined
Voltage and the second bias voltage are put, distributed three stacking amplifies network by k three transistor stack structure compositions, wherein k
More than or equal to 3, the three transistor stacks structure is made up of three transistors according to the connected stacking of source drain,
The source ground of the transistor of the bottom of the three transistor stacks structure, grid is connected by RC stabilizing circuits in parallel
The grid artificial transmission line of the consideration Miller effect is connected to,
The grid of the transistor in the intermediate layer of the three transistor stacks structure is connected to first biasing by feed resistance
Voltage, meanwhile, the grid connects compensation circuit；
The grid of the transistor of the superiors of the three transistor stacks structure is connected to second biasing by divider resistance
Voltage, meanwhile, the grid connects compensation circuit；Drain electrode is connected to the drain electrode artificial transmission line of the consideration Miller effect.
2. the power amplifier of distributed three stacked structure for considering Miller effect according to claim 1, its feature exists
In the grid compensation circuit of the transistor in the intermediate layer and the transistor of the superiors is compensated by grid compensation resistance and grid
Capacitance connection ground connection composition.
3. the power amplifier of distributed three stacked structure for considering Miller effect according to claim 1, its feature exists
In the grid artificial transmission line for considering Miller effect is by grid absorbing load, grid capacitance, grid feed inductance, k
+ 1 gate transmission line equivalent inductance and k gate transmission line equivalent capacity are constituted.
4. the power amplifier of distributed three stacked structure for considering Miller effect according to claim 1, its feature exists
In the drain electrode artificial transmission line for considering Miller effect is by drain electrode absorbing load, drain electrode capacitance, drain electrode feed inductance, k
+ 1 drain transmission line equivalent inductance and k drain transmission line equivalent capacity are constituted.
5. the power amplifier of distributed three stacked structure of the consideration Miller effect according to any one of Claims 1-4,
Characterized in that, it is active amplification network that distributed three stacking amplifies network, it is considered to the grid artificial transmission of Miller effect
The drain electrode artificial transmission line of line and consideration Miller effect is passive network.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106487338A (en) * | 2016-10-24 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of power amplifier of distributed three stacked structure of consideration Miller effect |
| CN107743021A (en) * | 2017-10-10 | 2018-02-27 | 成都嘉纳海威科技有限责任公司 | A kind of strong anti-mismatch high efficiency power amplifier based on transistor stack technology |
| CN108649913A (en) * | 2018-07-24 | 2018-10-12 | 青海民族大学 | A kind of Darlington distributed power amplifier based on linearisation Stack Technology |
| CN108649912A (en) * | 2018-07-24 | 2018-10-12 | 青海民族大学 | A kind of distributed power amplifier based on feedback-type three-level Darlington transistor |
| CN108683410A (en) * | 2018-07-24 | 2018-10-19 | 青海民族大学 | A kind of Darlington distributed power amplifier based on triode Stack Technology |
| CN108712155A (en) * | 2018-07-24 | 2018-10-26 | 青海民族大学 | A kind of distributed power amplifier based on feedback-type two level Darlington transistor |
| CN108847826A (en) * | 2018-06-21 | 2018-11-20 | 西安交通大学 | It is a kind of using the stack E power-like amplifier of dynamic bias network and its application |
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2016
- 2016-10-24 CN CN201621159951.4U patent/CN206259910U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106487338A (en) * | 2016-10-24 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of power amplifier of distributed three stacked structure of consideration Miller effect |
| CN106487338B (en) * | 2016-10-24 | 2023-07-14 | 成都嘉纳海威科技有限责任公司 | Power amplifier of distributed three-stack structure considering Miller effect |
| CN107743021A (en) * | 2017-10-10 | 2018-02-27 | 成都嘉纳海威科技有限责任公司 | A kind of strong anti-mismatch high efficiency power amplifier based on transistor stack technology |
| CN107743021B (en) * | 2017-10-10 | 2024-02-27 | 成都嘉纳海威科技有限责任公司 | High-mismatch-resistance high-efficiency power amplifier based on transistor stacking technology |
| CN108847826A (en) * | 2018-06-21 | 2018-11-20 | 西安交通大学 | It is a kind of using the stack E power-like amplifier of dynamic bias network and its application |
| CN108649913A (en) * | 2018-07-24 | 2018-10-12 | 青海民族大学 | A kind of Darlington distributed power amplifier based on linearisation Stack Technology |
| CN108649912A (en) * | 2018-07-24 | 2018-10-12 | 青海民族大学 | A kind of distributed power amplifier based on feedback-type three-level Darlington transistor |
| CN108683410A (en) * | 2018-07-24 | 2018-10-19 | 青海民族大学 | A kind of Darlington distributed power amplifier based on triode Stack Technology |
| CN108712155A (en) * | 2018-07-24 | 2018-10-26 | 青海民族大学 | A kind of distributed power amplifier based on feedback-type two level Darlington transistor |
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