CN207475495U - A kind of High-efficiency high-gain Doherty stacks power amplifier - Google Patents
A kind of High-efficiency high-gain Doherty stacks power amplifier Download PDFInfo
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Abstract
The utility model discloses a kind of High-efficiency high-gain Doherty to stack power amplifier, stacks main power amplification network including input matching and phase shift distribution network, three, three stacks auxiliary powers amplification networks, output matching and phase shift synthesis network, main power amplifier power supply biasing networks and auxiliary power amplifier power supply biasing networks.The utility model is using the main power amplification of three stacked transistors amplification real-time performance Doherty amplifiers and auxiliary power amplification, input and the output matching network that amplification network is stacked for three are utilized simultaneously, improve the power gain and power capacity of Doherty amplifiers, the low breakdown voltage characteristic of integrated circuit technology is avoided simultaneously, improves the Stability and dependability of circuit.The Doherty power amplifier chip circuit that the utility model is realized, output power is high, power gain is high, area is small.
Description
Technical field
The utility model belongs to field-effect transistor microwave radio power amplifier and technical field of integrated circuits, specifically relates to
And a kind of High-efficiency high-gain Doherty stacks the design of power amplifier.
Background technology
As the fast development in the commercial communications such as 3G, 4G-LTE market and 5G are laid out the early period to communicate, radio-frequency front-end hair
Emitter also develops to the high-performance of millimere-wave band, highly integrated, efficient direction.Therefore the urgent demand high efficiency in market, height
Gain, the millimeter wave Doherty power amplifier chip of low cost.
However, in the design of millimeter wave Doherty power amplifier chip, some design challenges, main body are always existed
Now：
(1) millimeter wave high power capacity index Design difficulty is larger：Due to driving for following 5G markets, radio-frequency front-end transmitting
Machine is there is an urgent need to be operated in the high-gain of millimere-wave band, high power, efficient Doherty amplifiers, but existing millimeter
The application circuit of wave frequency section must use grid to grow the semiconductor technology transistor smaller, characteristic frequency is higher, by its low breakdown
The influence of voltage, the voltage swing of power amplifier will be limited, therefore also limit the work(of power transistor by larger
Rate capacity.
(2) millimere-wave band high-capacity transistor parasitic parameter seriously affects circuitry specifications：In millimere-wave band, traditional common source is put
The millimeter wave Doherty amplifiers maximum available gain of big structure, efficiency, output power etc. are joined by high power transistor parasitism
Number influences, and deteriorates more serious.This is because under millimeter wave frequency band, using the Doherty amplifiers pair of active load modulation principle
It is very sensitive in parasitic parameter and impedance design.
The circuit structure of common radio frequency Doherty power amplifier has very much, but is restricted down by above-mentioned factor, application
It is fewer in the structure of millimere-wave band.Most typical millimere-wave band Doherty power amplifier is common-source amplifier unit conduct
Main power and auxiliary power amplifier, still, typical common-source amplifier unit still have some design deficiencies, major embodiment
：
(1) high-gain and high power capacity index Design difficulty are larger.
In order to improve output power, designer generally requires the transistor either 2 using large-sizenPower again closes
Current swing is improved into structure, but large-size crystals pipe and 2nPower combining structures again have relatively low power gain.
Therefore, high-gain and the mutual restriction problem of high power capacity index are more prominent in millimere-wave band Doherty amplifiers.This
Outside, in order to realize higher gain, often using dual stage circuit structure, this sets millimeter wave Doherty amplifiers by circuit is increased
Complexity is counted, while increases chip circuit area, promotes circuit design cost.
(2) millimere-wave band high-capacity transistor impedance matching difficulty is larger.
Since amplifier operation is in millimere-wave band, the limited power capacity of single transistor, designer is higher in order to obtain
Power capacity, generally require 2nTimes power combining structures, this structure often lead to output network have it is very low best
Load impedance, this low-load impedance will lead to the design of the active load modulation network of millimere-wave band Doherty amplifiers again
It is increased with difficulty of matching.
Utility model content
The purpose of this utility model is to provide a kind of High-efficiency high-gain Doherty and stacks power amplifier, utilizes three crystalline substances
Body pipe Stack Technology and corresponding input and output matching network realize millimeter wave frequency band high-gain, high linearity, efficiently
The advantages that rate, chip area are small and at low cost.
The technical solution of the utility model is：A kind of High-efficiency high-gain Doherty stacks power amplifier, including input
Matching and phase shift distribution network, the main power amplification network of three stackings, three stacking auxiliary powers amplification networks, output matching and phase shift
Synthesize network, main power amplifier power supply biasing networks and auxiliary power amplifier power supply biasing networks.
Input matching and phase shift distribution network input terminal be entire power amplifier input terminal, the first output terminal with
Three stack the input terminal connection of main power amplification network, the input terminal that second output terminal stacks auxiliary power amplification network with three
Connection.
Output matching and phase shift synthesis network output terminal be entire power amplifier output terminal, first input end with
Three stack the output terminal connection of main power amplification network, and the second input terminal and three stack the output terminal of auxiliary power amplification network
Connection.
Main power amplifier power supply biasing networks matchs respectively with input and phase shift distribution network, the three main power amplification networks of stacking with
And output matching and phase shift synthesize network connection；Auxiliary power amplifier power supply biasing networks are matched respectively with input and phase shift distribution net
Network, three stack auxiliary power amplification network and output matching and phase shift synthesis network connection.
The beneficial effects of the utility model are：The utility model stacks main power amplification network and three using three and stacks auxiliary
The advantage of power amplification real-time performance Doherty amplifiers, millimere-wave band obtain high-gain, high efficiency, high-power characteristic,
Circuit structure occupies the area of very little simultaneously.
Further, input matching and phase shift distribution network are included by inductance L1、L2、L4、L3It is sequentially connected four arms of composition
Electric bridge.Inductance L1With L2Connecting node on be connected separately with capacitance C1With ground capacity C2；Capacitance C1The other end
The input terminal of network is distributed for input matching and phase shift.Inductance L2With L4Connecting node on be connected separately with ground capacity C3With
Ground resistance Rinb.Inductance L3With L4Connecting node on be connected separately with ground capacity C5With the first T-shaped LC lattice networks；First
As input matching and the first output of phase shift distribution network after the other end the first RC stabilizing circuits of series connection of T-shaped LC lattice networks
End.Inductance L1With L3Connecting node on be connected separately with ground capacity C4With the second T-shaped LC lattice networks；Second T-shaped LC networks
As input matching and the second output terminal of phase shift distribution network after the other end the 2nd RC stabilizing circuits of series connection of circuit.
First T-shaped LC lattice networks and the second T-shaped LC lattice networks structure are identical；First T-shaped LC lattice networks include string
The inductance L of connection5With L6And it is connected in parallel on L5With L6Ground capacity C in connecting node6；Second T-shaped LC lattice networks include series connection
Inductance L7With L8And it is connected in parallel on L5With L6Ground capacity C in connecting node7.First RC stabilizing circuits and the 2nd RC stablize
Circuit structure is identical；First RC stabilizing circuits include resistance R in parallelgsbmWith capacitance Cgsbm；2nd RC stabilizing circuits include parallel connection
Resistance RgsbpWith capacitance Cgsbp。
Output matching and phase shift synthesis network include the inductance L being sequentially connected in series9, capacitance C9, inductance L11, inductance L12, capacitance
C11, inductance L13And inductance L10；Inductance L9The other end as output matching and phase shift synthesis network first input end, electricity
Feel L10The other end as output matching and phase shift synthesis network the second input terminal.Inductance L9With capacitance C9Connecting node on
It is also associated with ground capacity C8, capacitance C11With inductance L13Connecting node on be also associated with ground capacity C12, inductance L13With L10's
Ground capacity C is also associated in connecting node13, inductance L11With L12Connecting node on be also associated with third T-shaped LC networks electricity
Road.The T-shaped LC lattice networks of third include the inductance L of series connection14With L15And it is connected in parallel on L14With L15Ground connection electricity in connecting node
Hold C10；L15The other end as output matching and phase shift synthesis network output terminal.
The advantageous effect of above-mentioned further scheme is：Using the input that amplification network is stacked for three and export pair net
Network, improves the power gain and power capacity of Doherty amplifiers, while avoids the low breakdown voltage of integrated circuit technology
Characteristic improves the Stability and dependability of circuit.
Further, the main power amplification network of three stackings and three stacking auxiliary powers amplification network structures are identical, include
One or more stacked structure in parallel, being connected to stack according to source drain successively including one group per road stacked structure is formed
Top layer transistor, middle layer transistor and bottom transistor.Top layer transistor, middle layer transistor and bottom transistor
Size it is identical.
Three stack in main power amplification network, and the drain electrode of each top layer transistor is connected stacks main power amplification net as three
The output terminal of network；The grid of each top layer transistor connects main power amplifier power supply biasing networks and all the way compensation circuit respectively；Each
The grid of middle layer transistor connects main power amplifier power supply biasing networks and all the way compensation circuit respectively；The source of each bottom transistor
Extremely it is grounded；The grid of each bottom transistor is connected the input terminal for stacking main power amplification networks as three.
Three stack in auxiliary power amplification network, and the drain electrode of each top layer transistor is connected puts as three stacking auxiliary powers
The output terminal of big network；The grid of each top layer transistor connects auxiliary power amplifier power supply biasing networks and all the way compensation electricity respectively
Road；The grid of each middle layer transistor connects auxiliary power amplifier power supply biasing networks and all the way compensation circuit respectively；Each bottom
The source grounding of transistor；The grid of each bottom transistor, which is connected, amplifies the input of networks as three stacking auxiliary powers
End.
The advantageous effect of above-mentioned further scheme is：Traditional common source Doherty amplifiers are in millimere-wave band due to being posted
The influence of raw parameter, power gain is relatively low, generally requires two-stage even three-level enlarged structure and realizes high-gain index, this increases
Complex circuit designs degree is added.And the structure in the utility model only needs to stack enlarged structure using level-one three, it is possible to carry
The power gain of 3~5dB is risen, so as to enormously simplify circuit complexity.Meanwhile because three stack the output impedance of amplification network
It is higher than traditional common-source amplifier, so the main power amplification network of three stackings and three stacking auxiliary powers amplification networks can also be distinguished
Using 2nMultichannel in parallel stacks amplifier architecture again, can still ensure relatively high output load impedance.
Further, compensation circuit includes the grid steady resistance of series connection and grid compensating electric capacity, grid compensating electric capacity
The other end is grounded.
The advantageous effect of above-mentioned further scheme is：The three grid compensating electric capacities for stacking amplification network are the smaller electricity of capacitance
Hold, be used to implement the synchronous hunting of grid voltage, and in order to realize the stability under millimeter wave frequency band, need to connect and stablize electricity
Resistance, and the piled grids compensating electric capacity of tradition Cascode transistors is the larger capacitance of capacitance, the exchange for being used to implement grid connects
Ground, also without series connection steady resistance.
Further, three stack main power amplification network and three stacking auxiliary powers amplification networks may be used 2 groups it is identical
The transistor of size forms the Doherty amplifiers of symmetrical structure, can also use 2 groups of various sizes of transistors, form non-
The Doherty amplifiers of symmetrical structure.
The advantageous effect of above-mentioned further scheme is：Realize that the Doherty amplifiers of symmetrical structure can on circuit structure
To accomplish the accurate control of millimeter-wave signal phase, back-off efficiency is improved；And realize the Doherty amplifications of unsymmetric structure
Device further improves back-off efficiency by increasing circuit complexity.
Further, main power amplifier power supply biasing networks are identical with auxiliary power amplifier power supply biasing networks structure, include input
Power supply biasing circuit and amplification and output power supply biasing circuit.
In main power amplifier power supply biasing networks, input power supply biasing circuit includes the resistance R of series connectiongb1mWith inductance Lggm, resistance
Rgb1mWith inductance LggmConnecting node on be also associated with ground capacity Cggm；Resistance Rgb1mThe other end connection the main biased electrical of low pressure
Source VGGm；Inductance LggmThe other end with input match and phase shift distribution network in the first T-shaped LC lattice networks and the first RC stabilization
The connecting node connection of circuit.In main power amplifier power supply biasing networks, amplification and output power supply biasing circuit include what is be sequentially connected in series
Resistance Rgb4m、Rgb5m、Rgb6mAnd inductance Lddm；Resistance Rgb4mThe other end ground connection；Resistance Rgb4mWith Rgb5mConnecting node pass through
Resistance Rgb2mThe grid for stacking each middle layer transistor in main power amplification network with three respectively is connect；Resistance Rgb5mWith Rgb6m
Connecting node pass through resistance Rgb3mThe grid for stacking each top layer transistor in main power amplification network with three respectively is connect；Electricity
Hinder Rgb6mWith inductance LddmConnecting node on ground capacity C is also respectively connectedddmWith the main bias supply VDDm of high pressure；Inductance
LddmThe other end with output matching and phase shift synthesize inductance L in network9With capacitance C9Connecting node connection.
In auxiliary power amplifier power supply biasing networks, input power supply biasing circuit includes the resistance R of series connectiongb1pWith inductance Lggp, electricity
Hinder Rgb1pWith inductance LggpConnecting node on be also associated with ground capacity Cggp；Resistance Rgb1pOther end connection low pressure auxiliary it is inclined
Put power supply VGGp；Inductance LggpThe other end with input match and phase shift distribute network in the second T-shaped LC lattice networks and the 2nd RC
The connecting node connection of stabilizing circuit.In auxiliary power amplifier power supply biasing networks, amplification and output power supply biasing circuit are included successively
The resistance R of series connectiongb4p、Rgb5p、Rgb6pAnd inductance Lddp；Resistance Rgb4pThe other end ground connection；Resistance Rgb4pWith Rgb5pConnection section
Point passes through resistance Rgb2pThe grid with each middle layer transistor in three stacking auxiliary power amplification networks is connect respectively；Resistance
Rgb5pWith Rgb6pConnecting node pass through resistance Rgb3pEach top layer transistor in auxiliary power amplification network is stacked with three respectively
Grid connects；Resistance Rgb6pWith inductance LddpConnecting node on ground capacity C is also respectively connectedddpWith high pressure assisted bias electricity
Source VDDp；Inductance LddpThe other end with output matching and phase shift synthesize inductance L in network10And L13Connecting node connection.
The advantageous effect of above-mentioned further scheme is：Two symmetrically arranged power amplifier power supply biasing networks are used to implement to three
Transistor gate and drain electrode feed and the bypass functionality of spurious signal in amplification network are stacked, while is also input matching and phase shift
Distribute network, the main power amplification network of three stackings, three stacking auxiliary powers amplification networks and output matching and phase shift polymer fabric
Network is powered.
Description of the drawings
A kind of High-efficiency high-gain Doherty that Fig. 1 show the utility model embodiment offer stacks power amplifier
Functional block diagram.
A kind of High-efficiency high-gain Doherty that Fig. 2 show the utility model embodiment offer stacks power amplifier
Circuit diagram.
Specific embodiment
It is described in detail the illustrative embodiments of the utility model with reference to the drawings.It should be appreciated that show in attached drawing
The embodiment for going out and describing is only exemplary, it is intended that is illustrated the principle and spirit of the utility model, and is not limited this
The range of utility model.
The utility model embodiment provides a kind of High-efficiency high-gain Doherty and stacks power amplifier, such as Fig. 1 institutes
Show, stack main power amplification network including input matching and phase shift distribution network, three, three stack auxiliary powers amplification networks, defeated
Go out matching and phase shift synthesis network, main power amplifier power supply biasing networks and auxiliary power amplifier power supply biasing networks.Input matching and shifting
The input terminal of phase partitioning network is the input terminal of entire power amplifier, and the first output terminal and three stack main power amplification network
Input terminal connection, second output terminal with three stacking auxiliary powers amplify networks input terminal connect.Output matching and phase shift
The output terminal for synthesizing network is the output terminal of entire power amplifier, and first input end and three stack main power amplification network
Output terminal connects, and the second input terminal is connect with the output terminal of three stacking auxiliary power amplification networks.Main power amplifier supplies electrical bias net
Network synthesizes network with input matching and phase shift distribution network, the main power amplification network of three stackings and output matching and phase shift respectively
Connection；Auxiliary power amplifier power supply biasing networks are matched respectively with input and phase shift distribution network, three stacking auxiliary power amplification networks
And output matching and phase shift synthesize network connection.
As shown in Fig. 2, input matching and phase shift distribution network are included by inductance L1、L2、L4、L3It is sequentially connected the four of composition
Arm electric bridge.Inductance L1With L2Connecting node on be connected separately with capacitance C1With ground capacity C2；Capacitance C1It is another
Hold the input terminal that network is distributed for input matching and phase shift.Inductance L2With L4Connecting node on be connected separately with ground capacity C3
With ground resistance Rinb.Inductance L3With L4Connecting node on be connected separately with ground capacity C5With the first T-shaped LC lattice networks；The
It is defeated as input matching and phase shift distribution network first after the other end the first RC stabilizing circuits of series connection of one T-shaped LC lattice networks
Outlet.Inductance L1With L3Connecting node on be connected separately with ground capacity C4With the second T-shaped LC lattice networks；Second T-shaped LC nets
As input matching and the second output terminal of phase shift distribution network after the other end the 2nd RC stabilizing circuits of series connection of network circuit.
First T-shaped LC lattice networks and the second T-shaped LC lattice networks structure are identical；First T-shaped LC lattice networks include string
The inductance L of connection5With L6And it is connected in parallel on L5With L6Ground capacity C in connecting node6；Second T-shaped LC lattice networks include series connection
Inductance L7With L8And it is connected in parallel on L5With L6Ground capacity C in connecting node7.First RC stabilizing circuits and the 2nd RC stablize
Circuit structure is identical；First RC stabilizing circuits include resistance R in parallelgsbmWith capacitance Cgsbm；2nd RC stabilizing circuits include parallel connection
Resistance RgsbpWith capacitance Cgsbp。
Output matching and phase shift synthesis network include the inductance L being sequentially connected in series9, capacitance C9, inductance L11, inductance L12, capacitance
C11, inductance L13And inductance L10；Inductance L9The other end as output matching and phase shift synthesis network first input end, electricity
Feel L10The other end as output matching and phase shift synthesis network the second input terminal.Inductance L9With capacitance C9Connecting node on
It is also associated with ground capacity C8, capacitance C11With inductance L13Connecting node on be also associated with ground capacity C12, inductance L13With L10's
Ground capacity C is also associated in connecting node13, inductance L11With L12Connecting node on be also associated with third T-shaped LC networks electricity
Road.The T-shaped LC lattice networks of third include the inductance L of series connection14With L15And it is connected in parallel on L14With L15Ground connection electricity in connecting node
Hold C10；L15The other end as output matching and phase shift synthesis network output terminal.
The main power amplification network of three stackings and three stacking auxiliary powers amplification network structures are identical, including one or more
Stacked structure in parallel includes one group of top layer crystal for stacking and forming that is connected successively according to source drain per road stacked structure
Pipe, middle layer transistor and bottom transistor.The size phase of top layer transistor, middle layer transistor and bottom transistor
Together.In the utility model embodiment, as shown in Fig. 2, three stack main power amplification network and three stacking auxiliary power amplification networks
Using stacked structure all the way.
Three stack in main power amplification network, and the drain electrode of top layer transistor M3m stacks main power amplification network as three
Output terminal；The grid of top layer transistor M3m connects main power amplifier power supply biasing networks and respectively by grid steady resistance Rg3mWith one
Hold the grid compensating electric capacity C of ground connectiong3mCompensation circuit in series.The grid of middle layer transistor M2m connects main power amplifier respectively
It powers biasing networks and by grid steady resistance Rg2mWith the grid compensating electric capacity C of one end ground connectiong2mCompensation electricity in series
Road.The source electrode ground connection of bottom transistor M1m, the input terminal that grid stacks main power amplification network as three.
Three stack in auxiliary power amplification network, and the drain electrode of top layer transistor M3p stacks auxiliary power amplification net as three
The output terminal of network；The grid of top layer transistor M3p connects auxiliary power amplifier power supply biasing networks and respectively by grid steady resistance
Rg3pWith the grid compensating electric capacity C of one end ground connectiong3pCompensation circuit in series.The grid of middle layer transistor M2p connects respectively
Connect auxiliary power amplifier power supply biasing networks and by grid steady resistance Rg2pWith the grid compensating electric capacity C of one end ground connectiong2pSeries connection structure
Into compensation circuit.The source electrode ground connection of bottom transistor M1p, the input terminal that grid stacks auxiliary power amplification network as three.
Because the output impedance of three stacking amplification networks is higher than traditional common-source amplifier, three stack main power amplification nets
Network and three stacking auxiliary power amplification networks can also be respectively adopted 2nMultichannel in parallel stacks amplifier architecture again, can still protect
Demonstrate,prove relatively high output load impedance.
When using the stacked structure of multi-channel parallel, three stack in main power amplification network, the leakage of each top layer transistor
Extremely be connected the output terminal for stacking main power amplification network as three, and the grid of each bottom transistor is connected stacks main work(as three
Rate amplifies the input terminal of network.Three stack in auxiliary power amplification network, and the drain electrode of each top layer transistor is connected as three heaps
The output terminal of folded auxiliary power amplification network, the grid of each bottom transistor is connected stacks auxiliary power amplification network as three
Input terminal.Other circuit connecting modes per road stacked structure are identical with stacked structure all the way.
The crystal of 2 groups of identical sizes may be used in the main power amplification network of three stackings and three stacking auxiliary powers amplification networks
Pipe forms the Doherty amplifiers of symmetrical structure, realizes the accurate control of millimeter-wave signal phase, improves back-off efficiency；
2 groups of various sizes of transistors can also be used, the Doherty amplifiers of unsymmetric structure is formed, is answered by increasing circuit
Miscellaneous degree is so as to further improve back-off efficiency.
Main power amplifier power supply biasing networks are identical with auxiliary power amplifier power supply biasing networks structure, include input power supply biased electrical
Road and amplification and output power supply biasing circuit.
In main power amplifier power supply biasing networks, input power supply biasing circuit includes the resistance R of series connectiongb1mWith inductance Lggm, resistance
Rgb1mWith inductance LggmConnecting node on be also associated with ground capacity Cggm；Resistance Rgb1mThe other end connection the main biased electrical of low pressure
Source VGGm；Inductance LggmThe other end with input match and phase shift distribution network in the first T-shaped LC lattice networks and the first RC stabilization
The connecting node connection of circuit.In main power amplifier power supply biasing networks, amplification and output power supply biasing circuit include what is be sequentially connected in series
Resistance Rgb4m、Rgb5m、Rgb6mAnd inductance Lddm；Resistance Rgb4mThe other end ground connection；Resistance Rgb4mWith Rgb5mConnecting node pass through
Resistance Rgb2mThe grid for stacking each middle layer transistor in main power amplification network with three respectively is connect；Resistance Rgb5mWith Rgb6m
Connecting node pass through resistance Rgb3mThe grid for stacking each top layer transistor in main power amplification network with three respectively is connect；Electricity
Hinder Rgb6mWith inductance LddmConnecting node on ground capacity C is also respectively connectedddmWith the main bias supply VDDm of high pressure；Inductance
LddmThe other end with output matching and phase shift synthesize inductance L in network9With capacitance C9Connecting node connection.
In auxiliary power amplifier power supply biasing networks, input power supply biasing circuit includes the resistance R of series connectiongb1pWith inductance Lggp, electricity
Hinder Rgb1pWith inductance LggpConnecting node on be also associated with ground capacity Cggp；Resistance Rgb1pOther end connection low pressure auxiliary it is inclined
Put power supply VGGp；Inductance LggpThe other end with input match and phase shift distribute network in the second T-shaped LC lattice networks and the 2nd RC
The connecting node connection of stabilizing circuit.In auxiliary power amplifier power supply biasing networks, amplification and output power supply biasing circuit are included successively
The resistance R of series connectiongb4p、Rgb5p、Rgb6pAnd inductance Lddp；Resistance Rgb4pThe other end ground connection；Resistance Rgb4pWith Rgb5pConnection section
Point passes through resistance Rgb2pThe grid with each middle layer transistor in three stacking auxiliary power amplification networks is connect respectively；Resistance
Rgb5pWith Rgb6pConnecting node pass through resistance Rgb3pEach top layer transistor in auxiliary power amplification network is stacked with three respectively
Grid connects；Resistance Rgb6pWith inductance LddpConnecting node on ground capacity C is also respectively connectedddpWith high pressure assisted bias electricity
Source VDDp；Inductance LddpThe other end with output matching and phase shift synthesize inductance L in network10And L13Connecting node connection.
The concrete operating principle and process of the utility model are introduced with reference to Fig. 2：
Radio-frequency input signals distributes network by the input matching and phase shift of input terminal IN ingoing power amplifiers, through four arms
The network that the ground capacity and resistance of electric bridge and its connection of each node are formed carries out phase shift and power distribution, be divided into main signal and
Auxiliary signal (in the utility model embodiment, main signal is relative to 90 ° of auxiliary signal phase shift).When the three main power amplification nets of stacking
Network and three stacks the Doherty amplifiers that auxiliary power amplification network forms symmetrical structure using the identical transistor of 2 packet sizes
When, input matching and phase shift distribution real-time performance constant power distribute；When the main power amplification network of three stackings and three stacks auxiliary work(
When rate amplification network forms the Doherty amplifiers of unsymmetric structure using the different transistor of 2 packet sizes, input is matched and is moved
The non-constant power distribution of phase partitioning real-time performance, power sharing ratio carry out corresponding distribution according to the size ratio of 2 group transistors.Main letter
It number is matched through the first T-shaped LC lattice networks, then after the first RC stabilizing circuits stabilization, main power amplification nets is stacked into three
Network；Auxiliary signal is matched through the second T-shaped LC lattice networks, then after the 2nd RC stabilizing circuits stabilization, is stacked into three auxiliary
Help power amplification network.
Three stack main power amplification network and three stacking auxiliary power amplification networks using one or more crystalline substance in parallel
Body pipe stacked structure carries out power amplification to main signal and auxiliary signal respectively, finally respectively enters output matching and phase shift is closed
Into network, in inductance L11With L12Connecting node at carry out phase shift synthesis (in the utility model embodiment, main signal be relatively auxiliary
Help -90 ° of signal phase shift), output matching most is carried out through the first T-shaped LC lattice networks afterwards, forming radio frequency by output terminal OUT exports
Signal.
Symmetrically arranged main power amplifier power supply biasing networks and auxiliary power amplifier power supply biasing networks are respectively used to realize to three heaps
Fold transistor gate and the side of drain electrode feed and spurious signal in main power amplification network and three stacking auxiliary power amplification networks
Road function, while be also that input matching and phase shift distribute network, the main power amplification network of three stackings, three stacking auxiliary power amplifications
Network and output matching and phase shift synthesis network power supply.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this reality
With novel principle, it should be understood that the scope of protection of the utility model is not limited to such specific embodiments and embodiments.
Those of ordinary skill in the art can these technical inspirations according to disclosed in the utility model make and various do not depart from this practicality
Novel substantive other various specific deformations and combination, these deformations and combination are still within the protection scope of the present utility model.
Claims (7)
1. a kind of High-efficiency high-gain Doherty stacks power amplifier, which is characterized in that including input matching and phase shift distribution
Network, three stack main power amplification network, three stacking auxiliary power amplification networks, output matching and phase shift synthesis network, main work(
Put power supply biasing networks and auxiliary power amplifier power supply biasing networks；
Input terminal of the input terminal of the input matching and phase shift distribution network for the entire power amplifier, the first output
The input terminal for stacking main power amplification network with described three is held to connect, second output terminal stacks auxiliary power amplification with described three
The input terminal connection of network；
Output terminal of the output terminal of the output matching and phase shift synthesis network for the entire power amplifier, the first input
The output terminal for stacking main power amplification network with described three is held to connect, the second input terminal stacks auxiliary power amplification with described three
The output terminal connection of network；
The main power amplifier power supply biasing networks are matched respectively with the input and phase shift distribution network, the three main power amplification nets of stacking
Network and output matching and phase shift synthesis network connection；Auxiliary power amplifier power supply biasing networks matched respectively with the input and
Phase shift distribution network, three stack auxiliary power amplification network and output matching and phase shift synthesis network connection.
2. High-efficiency high-gain Doherty according to claim 1 stacks power amplifier, which is characterized in that described defeated
Enter matching and phase shift distribution network is included by inductance L1、L2、L4、L3It is sequentially connected the four arm electrical bridge of composition；
The inductance L1With L2Connecting node on be connected separately with capacitance C1With ground capacity C2；The capacitance C1's
The other end is the input terminal of input matching and phase shift distribution network；
The inductance L2With L4Connecting node on be connected separately with ground capacity C3With ground resistance Rinb；
The inductance L3With L4Connecting node on be connected separately with ground capacity C5With the first T-shaped LC lattice networks；Described first
As input matching and the first output of phase shift distribution network after the other end the first RC stabilizing circuits of series connection of T-shaped LC lattice networks
End；
The inductance L1With L3Connecting node on be connected separately with ground capacity C4With the second T-shaped LC lattice networks；Described second
As input matching and the second output of phase shift distribution network after the other end the 2nd RC stabilizing circuits of series connection of T-shaped LC lattice networks
End；
The first T-shaped LC lattice networks and the second T-shaped LC lattice networks structure are identical；The first T-shaped LC lattice networks packet
Include the inductance L of series connection5With L6And it is connected in parallel on L5With L6Ground capacity C in connecting node6；The second T-shaped LC lattice networks
Inductance L including series connection7With L8And it is connected in parallel on L5With L6Ground capacity C in connecting node7；
The first RC stabilizing circuits and the 2nd RC stabilizing circuit structures are identical；The first RC stabilizing circuits include electricity in parallel
Hinder RgsbmWith capacitance Cgsbm；The 2nd RC stabilizing circuits include resistance R in parallelgsbpWith capacitance Cgsbp。
3. High-efficiency high-gain Doherty according to claim 2 stacks power amplifier, which is characterized in that described three
It stacks main power amplification network and three stacking auxiliary power amplification network structures is identical, include one or more stacking in parallel
Structure, stacked structure described in per road is connected according to source drain successively including one group stacks the top layer transistor formed, centre
Layer transistor and bottom transistor；The size of the top layer transistor, middle layer transistor and bottom transistor is identical；
Described three stack in main power amplification network, and the drain electrode of each top layer transistor is connected stacks main power amplification net as three
The output terminal of network；The grid of each top layer transistor connects main power amplifier power supply biasing networks and all the way compensation circuit respectively；Each
The grid of middle layer transistor connects main power amplifier power supply biasing networks and all the way compensation circuit respectively；The source of each bottom transistor
Extremely it is grounded；The grid of each bottom transistor is connected the input terminal for stacking main power amplification networks as three；
Described three stack in auxiliary power amplification network, and the drain electrode of each top layer transistor is connected puts as three stacking auxiliary powers
The output terminal of big network；The grid of each top layer transistor connects auxiliary power amplifier power supply biasing networks and all the way compensation electricity respectively
Road；The grid of each middle layer transistor connects auxiliary power amplifier power supply biasing networks and all the way compensation circuit respectively；Each bottom
The source grounding of transistor；The grid of each bottom transistor, which is connected, amplifies the input of networks as three stacking auxiliary powers
End；
The compensation circuit includes the grid steady resistance of series connection and grid compensating electric capacity, the other end of the grid compensating electric capacity
Ground connection.
4. High-efficiency high-gain Doherty according to claim 3 stacks power amplifier, which is characterized in that described three
It stacks main power amplification network and three and stacks transistor of the auxiliary power amplification network using 2 groups of identical sizes, form symmetrical junction
The Doherty amplifiers of structure.
5. High-efficiency high-gain Doherty according to claim 3 stacks power amplifier, which is characterized in that described three
It stacks main power amplification network and three and stacks auxiliary power amplification network using 2 groups of various sizes of transistors, form asymmetric
The Doherty amplifiers of structure.
6. High-efficiency high-gain Doherty according to claim 3 stacks power amplifier, which is characterized in that described defeated
Go out matching and phase shift synthesis network includes the inductance L being sequentially connected in series9, capacitance C9, inductance L11, inductance L12, capacitance C11, inductance L13
And inductance L10；The inductance L9The other end as output matching and phase shift synthesis network first input end, the inductance
L10The other end as output matching and phase shift synthesis network the second input terminal；
The inductance L9With capacitance C9Connecting node on be also associated with ground capacity C8, the capacitance C11With inductance L13Connection
Ground capacity C is also associated on node12, the inductance L13With L10Connecting node on be also associated with ground capacity C13, the electricity
Feel L11With L12Connecting node on be also associated with the T-shaped LC lattice networks of third；
The T-shaped LC lattice networks of third include the inductance L of series connection14With L15And it is connected in parallel on L14With L15Connecing in connecting node
Ground capacitance C10；The L15The other end as output matching and phase shift synthesis network output terminal.
7. High-efficiency high-gain Doherty according to claim 6 stacks power amplifier, which is characterized in that the master
Power amplifier power biasing networks and auxiliary power amplifier power supply biasing networks structure it is identical, include input power supply biasing circuit and amplification and
Output power supply biasing circuit；
In the main power amplifier power supply biasing networks, input power supply biasing circuit includes the resistance R of series connectiongb1mWith inductance Lggm, it is described
Resistance Rgb1mWith inductance LggmConnecting node on be also associated with ground capacity Cggm；The resistance Rgb1mThe other end connection low pressure
Main bias supply VGGm；The inductance LggmThe other end with it is described input match and phase shift distribute network in the first T-shaped LC networks
The connecting node of circuit and the first RC stabilizing circuits connects；
In the auxiliary power amplifier power supply biasing networks, input power supply biasing circuit includes the resistance R of series connectiongb1pWith inductance Lggp, institute
State resistance Rgb1pWith inductance LggpConnecting node on be also associated with ground capacity Cggp；The resistance Rgb1pThe other end connection it is low
Press assisted bias power supply VGGp；The inductance LggpThe other end with it is described input match and phase shift distribute network in the second T-shaped LC
The connecting node of lattice network and the 2nd RC stabilizing circuits connects；
In the main power amplifier power supply biasing networks, amplification and output power supply biasing circuit include the resistance R being sequentially connected in seriesgb4m、
Rgb5m、Rgb6mAnd inductance Lddm；The resistance Rgb4mThe other end ground connection；The resistance Rgb4mWith Rgb5mConnecting node pass through
Resistance Rgb2mThe grid for stacking each middle layer transistor in main power amplification network with described three respectively is connect；The resistance
Rgb5mWith Rgb6mConnecting node pass through resistance Rgb3mEach top layer transistor in main power amplification network is stacked with described three respectively
Grid connection；The resistance Rgb6mWith inductance LddmConnecting node on ground capacity C is also respectively connectedddmMaster is inclined with high pressure
Put power vd Dm；The inductance LddmThe other end with it is described output matching and phase shift synthesize inductance L in network9With capacitance C9Company
Connect node connection；
In the auxiliary power amplifier power supply biasing networks, amplification and output power supply biasing circuit include the resistance R being sequentially connected in seriesgb4p、
Rgb5p、Rgb6pAnd inductance Lddp；The resistance Rgb4pThe other end ground connection；The resistance Rgb4pWith Rgb5pConnecting node pass through
Resistance Rgb2pThe grid with each middle layer transistor in described three stacking auxiliary power amplification networks is connect respectively；The resistance
Rgb5pWith Rgb6pConnecting node pass through resistance Rgb3pEach top layer crystal in auxiliary power amplification network is stacked with described three respectively
The grid connection of pipe；The resistance Rgb6pWith inductance LddpConnecting node on ground capacity C is also respectively connectedddpIt is auxiliary with high pressure
Help bias supply VDDp；The inductance LddpThe other end with it is described output matching and phase shift synthesize inductance L in network10And L13's
Connecting node connects.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721290202.XU CN207475495U (en) | 2017-09-30 | 2017-09-30 | A kind of High-efficiency high-gain Doherty stacks power amplifier |
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| CN201721290202.XU CN207475495U (en) | 2017-09-30 | 2017-09-30 | A kind of High-efficiency high-gain Doherty stacks power amplifier |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107733381A (en) * | 2017-09-30 | 2018-02-23 | 成都嘉纳海威科技有限责任公司 | A kind of High-efficiency high-gain Doherty stacks power amplifier |
| CN109274339A (en) * | 2018-10-18 | 2019-01-25 | 成都嘉纳海威科技有限责任公司 | A kind of Doherty driving Doherty power amplifier |
| CN109286379A (en) * | 2018-10-19 | 2019-01-29 | 成都中科天御通信技术有限公司 | A kind of power combing amplifying circuit |
| WO2023082932A1 (en) * | 2021-10-18 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Low-noise amplifier, related device and chip |
-
2017
- 2017-09-30 CN CN201721290202.XU patent/CN207475495U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107733381A (en) * | 2017-09-30 | 2018-02-23 | 成都嘉纳海威科技有限责任公司 | A kind of High-efficiency high-gain Doherty stacks power amplifier |
| CN107733381B (en) * | 2017-09-30 | 2023-10-27 | 成都嘉纳海威科技有限责任公司 | High-efficiency high-gain Doherty stacked power amplifier |
| CN109274339A (en) * | 2018-10-18 | 2019-01-25 | 成都嘉纳海威科技有限责任公司 | A kind of Doherty driving Doherty power amplifier |
| CN109286379A (en) * | 2018-10-19 | 2019-01-29 | 成都中科天御通信技术有限公司 | A kind of power combing amplifying circuit |
| WO2023082932A1 (en) * | 2021-10-18 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Low-noise amplifier, related device and chip |
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