CN109361365A - A kind of difference amplifier of high-gain low-noise - Google Patents

A kind of difference amplifier of high-gain low-noise Download PDF

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Publication number
CN109361365A
CN109361365A CN201811549565.XA CN201811549565A CN109361365A CN 109361365 A CN109361365 A CN 109361365A CN 201811549565 A CN201811549565 A CN 201811549565A CN 109361365 A CN109361365 A CN 109361365A
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drain electrode
grid
connects
electrode
source
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CN109361365B (en
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李素文
张国辉
张学涛
赵巍
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Tianjin Sanyuan Xingtai Microelectronics Technology Co Ltd
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Tianjin Sanyuan Xingtai Microelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45031—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are compositions of multiple transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45034—One or more added reactive elements, capacitive or inductive elements, to the amplifying transistors in the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45084—Indexing scheme relating to differential amplifiers the common mode signal circuit comprising one or more inductive or capacitive elements, e.g. filter circuitry
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45156—At least one capacitor being added at the input of a dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45201—Indexing scheme relating to differential amplifiers the differential amplifier contains one or more reactive elements, i.e. capacitive or inductive elements, in the load
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

The present invention provides a kind of difference amplifier of high-gain low-noise, including M0, M1, M2, M7, M8, M9, M10, M13, N-type metal-oxide-semiconductor including M14, M3, M4, M5, M6, M11, p-type metal-oxide-semiconductor including M12, the source electrode of M1 connects the source electrode of M2 and is connected with the drain electrode of M0, the drain electrode of M1 is connected between the drain electrode of source electrode and M5 of M3, the drain electrode of M2 is connected to the grid of the drain electrode connection M12 of M4 between the drain electrode of the source electrode and M6 of M4, the drain electrode of the drain electrode connection M7 of M3, the drain electrode of the drain electrode connection M8 of M4, the drain electrode of the source electrode connection M9 of M7, the drain electrode of the source electrode connection M10 of M8, the grid of the grid connection M13 of M9, the grid of the grid connection M14 of M10, the leakage of M11 Pole connects the drain electrode of M13, the drain electrode of the drain electrode connection M14 of M12.The present invention can have the characteristics that output voltage swing is big, high-gain, low noise.

Description

A kind of difference amplifier of high-gain low-noise
Technical field
The present invention relates to technical field of integrated circuits, and in particular to a kind of difference amplifier of high-gain low-noise.
Background technique
The structure for being commonly used in main operational amplifier design can substantially divide 3 kinds: two-stage type (Two Stage) structure, set skeleton symbol are total Source is total to grid (Telescopic Cascode) structure and Foldable cascade (Fold Cascode) structure.Two-stage type structure 1st grade can provide high DC current gain, and the 2nd grade provides big output voltage swing.But since the 2nd grade of electric current is very big, so that fortune It puts power consumption to greatly increase, simultaneously because cascading and the raw non-dominant pole of fecund, speed and bandwidth all decrease, and need to carry out frequency Rate compensation, not only increased design complexities can also largely effect on the speed of amplifier in this way；Cover skeleton symbol cascode structure due to Only 2 branches, power consumption are that three is minimum, and frequency characteristic is best, but due to needing to be laminated multistage pipe, lead to output voltage swing very It is low, it is difficult to work normally under low voltage operating, and input/output terminal cannot be shorted；And Foldable cascade structure is each For parameter characteristic between the above two, gain is substantially identical as set skeleton symbol cascade and is lower than two stage amplifer, though it is 4 branch Road, power consumption and frequency characteristic are much better than two stage amplifer, and output voltage swing is greater than Telescopic cascode structure, and input and output can be with It is shorted and inputs common mode electrical level and be easier to choose and be close to one end voltage of power supply.
Although the gain with higher of the difference amplifier of the Telescopic cascode of single-stage, can satisfy amplifier high speed, High-precision requirement, but have the shortcomings that the output voltage swing of serious limiting circuit, therefore, it is necessary to the increasings to two-stage differential amplifier Benefit and the amplitude of oscillation are separately handled, to meet the indices such as amplifier gain, power consumption settling time, output voltage swing, common-mode rejection ratio It is required that.
Summary of the invention
In view of this, the problem to be solved in the present invention is to provide a kind of difference amplifiers of high-gain low-noise.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of differential amplification of high-gain low-noise Device, including operational amplification circuit, the operational amplification circuit include M0, M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, the M0, the M1, the M2, the M7, the M8, the M9, the M10, the M13, institute It states M14 and is set as metal-oxide-semiconductor, the M3, the M4, the M5, the M6, the M11, the M12 of N-type and be set as p-type Metal-oxide-semiconductor, the source electrode of the M1 connect the source electrode of the M2 and are connected with the drain electrode of the M0, the M0, the M1 and the M2 Grid be separately connected differential radio frequency input signal In1 and In2, the drain electrode of the M1 is connected to the source electrode and the M5 of the M3 Drain electrode between, the drain electrode of the M2 is connected between the drain electrode of source electrode and the M6 of the M4, the drain electrode of M3 connection The grid of the M11, the drain electrode of the M4 connect the grid of the M12, and the grid of the M3 connects partially with the grid of the M4 Set voltage Vb1, the M5, the M6 source electrode be all connected with bias voltage Vb4, the M5, the M6, the M11, the M12 The drain electrode of source grounding GND, the M3 connect the drain electrode of the M7, the drain electrode of the M4 connects the drain electrode of the M8, institute State M7, the grid of the M8 is all connected with bias voltage Vb2, the source electrode of the M7 connects the drain electrode of the M9, the source electrode of the M8 Connect the drain electrode of the M10, the M0, the M9, the M10, the M13, the M14 source electrode be all connected with power vd D, institute The grid for stating M9 connects the grid of the M13, and the grid of the M10 connects the grid of the M14, and the M9, the M10, The M13, the M14 grid be all connected with bias voltage Vb3, the M5, the M6 grid connect bias voltage Vb4, institute The drain electrode for stating M11 connects the drain electrode of the M13, and the drain electrode of the M12 connects the drain electrode of the M14.
It preferably, further include common mode feedback circuit, the common mode feedback circuit includes Mc6, Mc7, Mc8, Mc9, Mc10, institute The source electrode for stating source electrode connection the power vd D, the Mc7 and the Mc8 of Mc6 is connect with the drain electrode of the Mc6, the Mc7's Drain electrode connects the drain electrode of the Mc9, and draining for the Mc8 connects the drain electrode of the Mc10, described in the grid connection of the Mc9 The source electrode of the drain electrode of the grid and the connection Mc8 of Mc10, the source electrode of the Mc9 and the Mc10 are grounded GND, the Mc6's Grid connects bias voltage Vb3, and the grid of the Mc6 connects bias voltage Vb3, and the grid of the Mc8 connects reference voltage The grid of Vref, the Mc7 pass through shunt capacitance Ccm1, the Vop of resistance Rrr1 connection output common mode voltage, the grid of the Mc7 Pole passes through shunt capacitance Ccm2, the Von of resistance Rrr2 connection output common mode voltage.
Preferably, parallel connection is connected to capacitor Cc1 and resistance Rcc1 between the drain electrode of the M3 and the drain electrode of the M11, described Parallel connection is connected to capacitor Cc2 and resistance Rcc2, the resistance Rcc1 connection output common mode between the drain electrode of M4 and the drain electrode of the M12 The Vop of voltage, and the resistance Rcc1 is grounded GND, the Von of the resistance Rcc2 connection output common mode voltage by capacitor C1, And the resistance Rcc2 is grounded GND by capacitor C2.
Preferably, capacitor Ccc1, the grid of the M2 and institute are connected between the grid of the M1 and the drain electrode of the M13 It states and is connected with capacitor Ccc2 between the drain electrode of M14.
It preferably, further include biasing circuit and normalized current source circuit, the biasing circuit is for reducing size and temperature Operating point drift caused by deviation is spent, the normalized current source circuit is band gap reference.
The advantages and positive effects of the present invention are: by the way that operational amplification circuit is designed as two-level configuration, the first order For Foldable cascade enlarged structure, the second level is common source enlarged structure, makes operational amplifier normal by resistance sampling Work, while making the frequency characteristic of dual-stage amplifier meet stability requirement using miller compensation, the amplifier gain > 90dB, common-mode input range > 1.4V, output voltage drive the amplitude of oscillation > 3V, unity gain bandwidth 5MHz, have high gain, output Voltage swing is big, common mode input range is big, and the small feature of harmonic distortion has good common mode inhibition and power supply characteristic.
Detailed description of the invention
Fig. 1 is the circuit diagram of the folding cascade amplifier of the prior art；
Fig. 2 is the circuit diagram of the telescopic cascade amplifier of the prior art；
Fig. 3 is a kind of circuit diagram of the operational amplification circuit of the difference amplifier of high-gain low-noise of the invention；
Fig. 4 is a kind of circuit diagram of the common mode feedback circuit of the difference amplifier of high-gain low-noise of the invention.
Specific embodiment
In order to better understand the present invention, the present invention is further retouched with attached drawing combined with specific embodiments below It states.
As shown in Figures 1 to 4, the present invention provides a kind of difference amplifier of high-gain low-noise, including operation amplifier electricity Road, the operational amplification circuit include M0, M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, described M0, the M1, the M2, the M7, the M8, the M9, the M10, the M13, the M14 are set as the MOS of N-type Pipe, the M3, the M4, the M5, the M6, the M11, the M12 are set as the metal-oxide-semiconductor of p-type, and the source electrode of the M1 connects It connects the source electrode of the M2 and is connected with the drain electrode of the M0, the grid of the M0, the M1 and the M2 are separately connected difference and penetrate Frequency input signal In1 and In2, the drain electrode of the M1 are connected between the drain electrode of source electrode and the M5 of the M3, the M2's Drain electrode is connected between the drain electrode of source electrode and the M6 of the M4, and the drain electrode of the M3 connects the grid of the M11, the M4 Drain electrode connect the grid of the M12, the grid of the M3 connects bias voltage Vb1 with the grid of the M4, the M5, described The source electrode of M6 is all connected with bias voltage Vb4, the source grounding GND, the M3 of the M5, the M6, the M11, the M12 Drain electrode connect the drain electrode of the M7, the drain electrode of the M4 connects the drain electrode of the M8, the M7, the M8 grid be all connected with Bias voltage Vb2, the source electrode of the M7 connect the drain electrode of the M9, and the source electrode of the M8 connects the drain electrode of the M10, described M0, the M9, the M10, the M13, the M14 source electrode be all connected with power vd D, the grid of the M9 connects the M13 Grid, the grid of the M10 connects the grid of the M14, and the grid of the M9, the M10, the M13, the M14 Be all connected with bias voltage Vb3, the M5, the M6 grid connect bias voltage Vb4, the drain electrode of the M11 connects the M13 Drain electrode, the drain electrode of the M12 connects the drain electrode of the M14.
It further, further include common mode feedback circuit, the common mode feedback circuit includes Mc6, Mc7, Mc8, Mc9, Mc10, The source electrode of source electrode connection the power vd D, the Mc7 and the Mc8 of the Mc6 are connect with the drain electrode of the Mc6, the Mc7 Drain electrode connect the drain electrode of the Mc9, the drain electrode of the Mc8 connects the drain electrode of the Mc10, described in the grid connection of the Mc9 The source electrode of the drain electrode of the grid and the connection Mc8 of Mc10, the source electrode of the Mc9 and the Mc10 are grounded GND, the Mc6's Grid connects bias voltage Vb3, and the grid of the Mc6 connects bias voltage Vb3, and the grid of the Mc8 connects reference voltage The grid of Vref, the Mc7 pass through shunt capacitance Ccm1, the Vop of resistance Rrr1 connection output common mode voltage, the grid of the Mc7 Pole passes through shunt capacitance Ccm2, the Von of resistance Rrr2 connection output common mode voltage.
Further, parallel connection is connected to capacitor Cc1 and resistance Rcc1, institute between the drain electrode of the M3 and the drain electrode of the M11 It states parallel connection between the drain electrode of M4 and the drain electrode of the M12 and is connected to capacitor Cc2 and resistance Rcc2, the resistance Rcc1 connection output is altogether The Vop of mode voltage, and the resistance Rcc1 is grounded GND by capacitor C1, the resistance Rcc2 connection output common mode voltage Von, and the resistance Rcc2 is grounded GND by capacitor C2.
Further, be connected with capacitor Ccc1 between the grid of the M1 and the drain electrode of the M13, the grid of the M2 with Capacitor Ccc2 is connected between the drain electrode of the M14.
Further, further include biasing circuit and normalized current source circuit, the biasing circuit for reduce size and Operating point drift caused by temperature deviation, the normalized current source circuit are band gap reference.
It show a kind of circuit diagram of existing folding cascade amplifier, the output of the amplifier referring to Fig.1 The amplitude of oscillation is larger, enables to output and input short circuit, so that common-mode voltage provides one end voltage close to power supply, but due to inclined It sets electric current and is provided to input pipe and cascade pipe, therefore relatively high power can be consumed, driving voltage is excessively high, while the amplifier Low with gain, the low disadvantage of pole frequency, noise is higher.
Comparison is referring to shown in Fig. 2, and telescopic cascade operational amplifier circuit is compared with folded cascode Op Amp, the fortune The voltage gain put is higher, and the speed of amplifier is fast, low in energy consumption, noise is low, but the amplifier output voltage swing of the structure is lower, it is difficult to Gain buffer is realized by the way of input and output short circuit.
For single-stage folded cascode circuitry, output impedance is higher, and driving capability is weaker, is compared by analysis It obtains, it, i.e., will be simply total using the Telescopic cascode structure amplifier of high gain as the first order using two-stage amplifying circuit Source structure is capable of providing high output voltage swing and big driving current, the DC current gain of simple two stage amplifer as the second level Smaller therefore bigger using the gain of cascode structure, the present invention provides a kind of difference amplifier of high-gain low-noise, Including operational amplification circuit, common mode feedback circuit, frequency compensated circuit and biasing circuit, operational amplification circuit as shown in Figure 3 N-type metal-oxide-semiconductor including M0, M1, M2, M7, M8, M9, M10, M13, M14, the p-type including M3, M4, M5, M6, M11, M12 Metal-oxide-semiconductor, the source electrode of M1 connect the source electrode of M2 and are connected with the drain electrode of M0, and it is defeated that the grid of M0, M1 and M2 are separately connected differential radio frequency Enter signal In1 and In2, the drain electrode of M1 is connected between the drain electrode of source electrode and M5 of M3, the drain electrode of M2 be connected to M4 source electrode and Between the drain electrode of M6, the grid of the drain electrode connection M11 of M3, the grid of the drain electrode connection M12 of M4, the grid of M3 and the grid of M4 connect Bias voltage Vb1 is met, the source electrode of M5, M6 are all connected with bias voltage Vb4, the source grounding GND of M5, M6, M11, M12, M3's The drain electrode of drain electrode connection M7, the drain electrode of the drain electrode connection M8 of M4, the grid of M7, M8 are all connected with bias voltage Vb2, and the source electrode of M7 connects The drain electrode of M9, the drain electrode of the source electrode connection M10 of M8 are connect, the source electrode of M0, M9, M10, M13, M14 are all connected with power vd D, the grid of M9 Pole connects the grid of M13, the grid of the grid connection M14 of M10, and the grid of M9, M10, M13, M14 are all connected with bias voltage The grid of Vb3, M5, M6 connect bias voltage Vb4, the drain electrode of the drain electrode connection M13 of M11, the drain electrode of the drain electrode connection M14 of M12.
The size and stability of the provided bias voltage of biasing circuit rise for improving entire difference amplifier performance To vital effect, biasing circuit provides Vb1, Vb2, Vb3 bias voltage for difference amplifier, by mentioning for biasing circuit For appropriate reference current Iref, while appropriate breadth length ratio is set and can be realized.It includes amplifier that the biasing circuit, which provides, Four bias voltages including Vb1, Vb2, Vb3 of circuit and the reference voltage Vref of common mode feedback circuit.Vb1 is biased in On the grid of M3, M4, to realize that output voltage swing is sufficiently large, to meet Vb1 and be approximately equal to VOVAnd VGSThe sum of, it is biased by adjusting The circuit branch metal-oxide-semiconductor size makes Vb1 be 1.78V or so, Vb2=VDD-VGS-VOV, reference voltage in common mode feedback circuit Vref is VDDHalf, be equivalent to two VGSVoltage, therefore can be realized by stacking the metal-oxide-semiconductor that two grid leaks are shorted.
Totally three poles and a zero point, three poles are located at node n 2, n3, the first amplification to the differential amplifier circuit Grade output node and the second amplifying stage output node, and the first amplifying stage output node decision systems dominant pole p1, due to node The direct-to-ground capacitance very little of n2, n3, therefore the pole that the node introduces is much higher than dominant pole.
Rout1=[gm4ro4(ro6||ro2)]||[gm8ro8ro10]
PM=180 ° of+ph [T (jGB)]=60 °
For eliminate Right-half-plant zero problem, resistance Rcc1, Rcc2 are in series in Miller's compensating circuit so that this zero Point is converted into Left half-plane zero point, eliminates first non-dominant pole to realize, establishment condition is
When input differential signal is larger, M2 cut-off is at this time I by the charging current of Cc2D6-ID10, calculate It is to slew rate
Wherein Cc=8pF, therefore ID6-ID10=16 μ A make I to retain allowanceD6-ID10=25 μ A, due to ID6=ID2+ ID10, two branch currents are equal, i.e. ID6=ID2+ID10=25 μ A, ID6=50 μ A, ID0=ID1+ID2=50 μ A.
Since the output common mode level of difference amplifier is very sensitive to the characteristic and mismatch of component, the high of amplifier increases Benefit will cause the mismatch of upper and lower current source, to cause some metal-oxide-semiconductor cisco unity malfunctions into linear zone, and even Circuit works normally, and it is very narrow for also generating the common-mode input range of permission, so that circuit is only defeated in certain common mode Gain needed for just meeting in access point, on other common mode output levels, all because the high-gain of circuit enters metal-oxide-semiconductor linearly Area and cisco unity malfunction, therefore common mode feedback circuit must be increased to improve the stability of difference amplifier.
As shown in figure 4, the output end voltage Vop and Von of common mode feedback circuit via resistance sampling network Rrr1, Rrr2, Common-mode voltage Vncm=Vcm is obtained after Ccm1, Ccm2, the error constituted compared with reference voltage Vref and through Mc6 to Mc10 Amplifier first will return to common-mode point Vb4 after difference amplification, to guarantee that common mode feedback circuit forms negative-feedback in circuit, it is assumed that Output common mode voltage increases, then Vncm increases, and the electric current for flowing through Mc7 reduces, and the electric current of Mc8 increases, since Mc9 is to the electricity of Mc10 Traffic mirroring acts on so that the sink current of output increases, and Vb4 reduces, so that the output common mode electricity of the first order of amplifier circuit Pressure increases, so that output common mode voltage reduces, accordingly ensure that common mode feedback circuit is negative-feedback.
The embodiments of the present invention have been described in detail above, but content is only the preferred embodiment of the present invention, It should not be considered as limiting the scope of the invention.All changes and improvements made in accordance with the scope of the present invention, should all It still belongs within this patent covering scope.

Claims (5)

1. a kind of difference amplifier of high-gain low-noise, it is characterised in that: including operational amplification circuit, the operation amplifier electricity Road includes M0, M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, the M0, the M1, the M2, The M7, the M8, the M9, the M10, the M13, the M14 are set as the metal-oxide-semiconductor, the M3, the M4, institute of N-type State the metal-oxide-semiconductor that M5, the M6, the M11, the M12 are set as p-type, the source electrode of the M1 connect the source electrode of the M2 and with The drain electrode of the M0 is connected, and the grid of the M0, the M1 and the M2 are separately connected differential radio frequency input signal In1 and In2, The drain electrode of the M1 is connected between the drain electrode of source electrode and the M5 of the M3, and the drain electrode of the M2 is connected to the source of the M4 Between pole and the drain electrode of the M6, the drain electrode of the M3 connects the grid of the M11, and the drain electrode of the M4 connects the M12's Grid, the grid of the M3 and the grid of the M4 connect bias voltage Vb1, the M5, the M6 source electrode be all connected with biasing The drain electrode of source grounding GND, the M3 of voltage Vb4, the M5, the M6, the M11, the M12 connect the M7's Drain electrode, the drain electrode of the M4 connect the drain electrode of the M8, the M7, the M8 grid be all connected with bias voltage Vb2, the M7 Source electrode connect the drain electrode of the M9, the source electrode of the M8 connects the drain electrode of the M10, the M0, the M9, the M10, institute State M13, the source electrode of the M14 is all connected with power vd D, the grid of the M9 connects the grid of the M13, the grid of the M10 The grid of the M14 is connected, and the grid of the M9, the M10, the M13, the M14 are all connected with bias voltage Vb3, institute The drain electrode for stating grid connection the bias voltage Vb4, the M11 of M5, the M6 connects the drain electrode of the M13, the drain electrode of the M12 Connect the drain electrode of the M14.
2. a kind of difference amplifier of high-gain low-noise according to claim 1, it is characterised in that: further include that common mode is anti- Current feed circuit, the common mode feedback circuit include Mc6, Mc7, Mc8, Mc9, Mc10, and the source electrode of the Mc6 connects power vd D, described The source electrode of Mc7 and the Mc8 are connect with the drain electrode of the Mc6, and the drain electrode of the Mc7 connects the drain electrode of the Mc9, described The drain electrode of Mc8 connects the drain electrode of the Mc10, and the grid of the Mc9 connects the leakage of the grid of the Mc10 and the connection Mc8 The source electrode of pole, the source electrode of the Mc9 and the Mc10 are grounded GND, and the grid of the Mc6 connects bias voltage Vb3, the Mc6 Grid connect bias voltage Vb3, the grid of the Mc8 connects reference voltage Vref, and the grid of the Mc7 passes through shunt capacitance The grid of the Vop of Ccm1, resistance Rrr1 connection output common mode voltage, the Mc7 pass through shunt capacitance Ccm2, resistance Rrr2 connection The Von of output common mode voltage.
3. a kind of difference amplifier of high-gain low-noise according to claim 1, it is characterised in that: the drain electrode of the M3 Parallel connection is connected to capacitor Cc1 and resistance Rcc1 between the drain electrode of the M11, between the drain electrode of the M4 and the drain electrode of the M12 Parallel connection is connected to capacitor Cc2 and resistance Rcc2, the Vop of the resistance Rcc1 connection output common mode voltage, and the resistance Rcc1 are logical Capacitor C1 ground connection GND, the Von of the resistance Rcc2 connection output common mode voltage are crossed, and the resistance Rcc2 is connect by capacitor C2 Ground GND.
4. a kind of difference amplifier of high-gain low-noise according to claim 1, it is characterised in that: the grid of the M1 It is connected with capacitor Ccc1 between drain electrode with the M13, is connected with capacitor between the grid of the M2 and the drain electrode of the M14 Ccc2。
5. a kind of difference amplifier of high-gain low-noise according to claim 1, it is characterised in that: further include biased electrical Road and normalized current source circuit, the biasing circuit are described for reducing operating point drift caused by size and temperature deviation Normalized current source circuit is band gap reference.
CN201811549565.XA 2018-12-18 2018-12-18 High-gain low-noise differential amplifier Active CN109361365B (en)

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CN111030624B (en) * 2019-12-31 2024-05-10 江苏润石科技有限公司 Common mode rejection ratio configurable instrumentation amplifier and configuration method thereof

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CN111030624B (en) * 2019-12-31 2024-05-10 江苏润石科技有限公司 Common mode rejection ratio configurable instrumentation amplifier and configuration method thereof

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