CN104009723A - Integrated fully differential amplifier - Google Patents
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- CN104009723A CN104009723A CN201410238994.0A CN201410238994A CN104009723A CN 104009723 A CN104009723 A CN 104009723A CN 201410238994 A CN201410238994 A CN 201410238994A CN 104009723 A CN104009723 A CN 104009723A
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Abstract
The invention is applicable to the field of integrated circuits and provides an integrated fully differential amplifier. The fully differential amplifier comprises a first filtration module, a second filtration module and a proportional amplification module. The output end of the first filtration module is connected to the input end of the proportional amplification module; the output end of the second filtration module is connected to the input end of the proportional amplification module; the first filtration module and the second filtration module are same in structure and each comprises a small current biasing circuit and a filtration circuit; the output end of each small current biasing circuit is connected to the input end of each filtration circuit. Since a high-pass filtration function is formed through the small current biasing circuits and capacitors, the limitation from direct current dropout voltage of an input signal to an amplification gain is removed, the circuit SNR (Signal to Noise Ratio) is improved, and the in-chip integrated high-pass filtration function within an extreme low frequency range is realized; as the instrument structure is replaced by the integrated circuit, the power consumption is lowered.
Description
Technical field
The invention belongs to integrated circuit fields, relate in particular to a kind of fully differential type amplifier of integrated high-pass filtering.
Background technology
Mobile healthy, portable personal monitoring medical treatment is one of important component part in health care system after China.Can guard for a long time continuously individual, can find in time children under guardianship's the burst state of an illness or undesired physiological situation, by one of important need of medical and health services development after being.The real-time of this application and universality require this to overlap novel monitor system need to possess portability, and miniaturization is integrated, the feature of low-power consumption.
In the time gathering the faint small-signal of some human bodies, these signals different DC differential pressure that is often being coupled, for example, in the time gathering human ecg signal or EEG signals, the input signal larger electrode polarization pressure reduction that is being coupled, can reach ± 300mV of maximum.Under limited supply voltage, this DC differential pressure will directly limit the multiplication factor of amplifying circuit, the signal to noise ratio of step-down amplifier.
The collection of some small-signals of human body at present, for example human ecg signal, EEG signals, mainly still adopt traditional instrument structure for amplifying, realize by building board-level circuit, take larger area, in the Medical Devices of all main flows in the market, all adopt in this way; Occur in recent years this instrument structure for amplifying to carry out integrated chip, improve the integrated of circuit, as the AD8232 chip of Ya De promise semiconductor company (ADI) release; Or adopt the differential amplifier circuit with high pass filter function, wherein high pass filter function adopts traditional resistance capacitance structure to realize.
Defect below existing in current prior art:
(1) technology of main flow is to adopt traditional instrument structure for amplifying at present, builds by discrete element device, consumes larger area and power consumption;
(2) existing minority chip, as the AD8232 of Ya De promise semiconductor (ADI), realizes the integrated chip of instrument structure for amplifying, but due to the restriction of polarizing voltage, signal gain amplifier is very little, and circuit signal to noise ratio is lower;
(3) adopt the fully differential amplifying circuit with high pass filter function, wherein high pass filter function is realized by traditional resistance capacitance structure, can remove the restriction to gain amplifier; But in the time gathering low-frequency physiology small-signal, realize extremely low cut-off frequency needs very large resistance or electric capacity, is difficult to realize full Embedded.
Summary of the invention
The object of the present invention is to provide a kind of integrated fully differential type amplifier, be intended to solve the limited problem of multiplication factor that causes amplifying circuit while gathering low frequency small-signal due to polarization pressure reduction.
The present invention realizes like this, a kind of integrated fully-differential amplifier, this fully-differential amplifier comprises the first filtration module, the second filtration module, ratio amplification module, the output of described the first filtration module connects the input of described ratio amplification module, and the output of described the second filtration module connects the input of described ratio amplification module; The structure of described the first filtration module, the second filtration module is identical, and it comprises little current biasing circuit and filter circuit, and the output of described little current biasing circuit connects the input of described filter circuit.
Further technical scheme of the present invention is: described little current biasing circuit comprises current source Ibg, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3 and metal-oxide-semiconductor MC4, described current source Ibg one end connects respectively the drain electrode of described metal-oxide-semiconductor M1, the grid of grid and metal-oxide-semiconductor M2, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected, the grid of described metal-oxide-semiconductor M3, the grid of drain electrode and metal-oxide-semiconductor M4 connects respectively the drain electrode of described metal-oxide-semiconductor MC4, the source electrode of described metal-oxide-semiconductor MC4 connects the drain electrode of described metal-oxide-semiconductor MC3, the grid of described metal-oxide-semiconductor MC4 connects respectively the grid of described metal-oxide-semiconductor MC3 and the grid of metal-oxide-semiconductor MC2, the grid of described metal-oxide-semiconductor MC2, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, the grid of described metal-oxide-semiconductor MC1, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, described metal-oxide-semiconductor MC1, the source ground of metal-oxide-semiconductor MC2 and metal-oxide-semiconductor MC3, the other end ground connection of described current source Ibg.
Further technical scheme of the present invention is: described filter circuit comprises metal-oxide-semiconductor MA, metal-oxide-semiconductor MB and capacitor C 2, the grid of the grid of described metal-oxide-semiconductor MA and metal-oxide-semiconductor MB, the drain electrode that drain electrode connects respectively described metal-oxide-semiconductor M4, the source electrode of described metal-oxide-semiconductor MA is connected with the source electrode of metal-oxide-semiconductor MB, and described capacitor C 2 is in parallel to source electrode with draining of described metal-oxide-semiconductor MA.
Further technical scheme of the present invention is: described ratio amplification module comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3, metal-oxide-semiconductor MC4, metal-oxide-semiconductor MA and metal-oxide-semiconductor MB all adopt P-MOS.
Another object of the present invention is to provide a kind of integrated fully-differential amplifier, this fully-differential amplifier comprises the first filtration module, the second filtration module, ratio amplification module, the output of described the first filtration module connects the input of described ratio amplification module, and the output of described the second filtration module connects the input of described ratio amplification module; The structure of described the first filtration module, the second filtration module is identical, and it comprises multiple little current biasing circuits and filter circuit, and the output of described little current biasing circuit connects the input of described filter circuit, the mutual cascade of described multiple little current circuits.
Further technical scheme of the present invention is: described little current biasing circuit comprises current source Ibg, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3 and metal-oxide-semiconductor MC4, described current source Ibg one end connects respectively the drain electrode of described metal-oxide-semiconductor M1, the grid of grid and metal-oxide-semiconductor M2, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected, the grid of described metal-oxide-semiconductor M3, the grid of drain electrode and metal-oxide-semiconductor M4 connects respectively the drain electrode of described metal-oxide-semiconductor MC4, the source electrode of described metal-oxide-semiconductor MC4 connects the drain electrode of described metal-oxide-semiconductor MC3, the grid of described metal-oxide-semiconductor MC4 connects respectively the grid of described metal-oxide-semiconductor MC3 and the grid of metal-oxide-semiconductor MC2, the grid of described metal-oxide-semiconductor MC2, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, the grid of described metal-oxide-semiconductor MC1, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, described metal-oxide-semiconductor MC1, the source ground of metal-oxide-semiconductor MC2 and metal-oxide-semiconductor MC3, the other end ground connection of described current source Ibg.
Further technical scheme of the present invention is: described filter circuit comprises metal-oxide-semiconductor MA, metal-oxide-semiconductor MB and capacitor C 2, the grid of the grid of described metal-oxide-semiconductor MA and metal-oxide-semiconductor MB, the drain electrode that drain electrode connects respectively described metal-oxide-semiconductor M4, the source electrode of described metal-oxide-semiconductor MA is connected with the source electrode of metal-oxide-semiconductor MB, and described capacitor C 2 is in parallel to source electrode with draining of described metal-oxide-semiconductor MA.
Further technical scheme of the present invention is: described ratio amplification module comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3, metal-oxide-semiconductor MC4, metal-oxide-semiconductor MA and metal-oxide-semiconductor MB all adopt P-MOS, described multiple little current biasing circuit is isolated mutually.
Another object of the present invention is to the fully-differential amplifier that provides integrated, this fully-differential amplifier comprises the first filtration module, the second filtration module, ratio amplification module, the output of described the first filtration module connects the input of described ratio amplification module, and the output of described the second filtration module connects the input of described proportional amplifier; The structure of described the first filtration module, the second filtration module is identical, it comprises filter circuit, described filter circuit comprises virtual resistance Rf and capacitor C 2, described virtual resistance Rf is in parallel with described capacitor C 2, described virtual resistance comprises metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6, the source electrode of described metal-oxide-semiconductor M5 connects respectively grid, the drain electrode of described metal-oxide-semiconductor M6, and grid, the drain electrode of described metal-oxide-semiconductor M5 are connected.
Further technical scheme of the present invention is: described ratio amplification module comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M5, metal-oxide-semiconductor M6 all adopt P-MOS.
The invention has the beneficial effects as follows: form high pass filter function by little current biasing circuit and electric capacity, remove the restriction of input signal DC differential pressure to gain amplifier, improve circuit signal to noise ratio, realize the Embedded high pass filter function within the scope of extremely low frequency, adopt integrated circuit to replace instrument structure, reduced power consumption.
Brief description of the drawings
Fig. 1 be the embodiment of the present invention provide can Embedded high pass filter function fully differential structure for amplifying;
Fig. 2 is the little current circuit structure of biasing that the embodiment of the present invention provides;
Fig. 3 is the schematic diagram that the virtual resistance that provides of the embodiment of the present invention substitutes the little electric current of biasing and realize high-pass filtering;
Fig. 4 is the amplitude-frequency response figure that the embodiment of the present invention provides;
Fig. 5 is the structured flowchart of the integrated fully-differential amplifier that provides of the embodiment of the present invention.
Embodiment
Little current biasing circuit 100-first filtration module 200-ratio amplification module 300-the second filtration module of Reference numeral: 10-
As shown in Figure 1, 2, a kind of integrated fully-differential amplifier provided by the invention, this fully-differential amplifier comprises the first filtration module 100, the second filtration module 300, ratio amplification module 200, the output of described the first filtration module 100 connects the input of described ratio amplification module 200, and the output of described the second filtration module 300 connects the input of described ratio amplification module 200; The structure of described the first filtration module 100, the second filtration module 300 is identical, and it comprises little current biasing circuit 10 and filter circuit, and the output of described little current biasing circuit 10 connects the input of described filter circuit.Form high pass filter function by little current biasing circuit and electric capacity, remove the restriction of input signal DC differential pressure to gain amplifier, improve circuit signal to noise ratio, realize the Embedded high pass filter function within the scope of extremely low frequency, adopt integrated circuit to replace instrument structure, reduced power consumption.
Described little current biasing circuit 10 comprises current source Ibg, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3 and metal-oxide-semiconductor MC4, described current source Ibg one end connects respectively the drain electrode of described metal-oxide-semiconductor M1, the grid of grid and metal-oxide-semiconductor M2, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected, the grid of described metal-oxide-semiconductor M3, the grid of drain electrode and metal-oxide-semiconductor M4 connects respectively the drain electrode of described metal-oxide-semiconductor MC4, the source electrode of described metal-oxide-semiconductor MC4 connects the drain electrode of described metal-oxide-semiconductor MC3, the grid of described metal-oxide-semiconductor MC4 connects respectively the grid of described metal-oxide-semiconductor MC3 and the grid of metal-oxide-semiconductor MC2, the grid of described metal-oxide-semiconductor MC2, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, the grid of described metal-oxide-semiconductor MC1, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, described metal-oxide-semiconductor MC1, the source ground of metal-oxide-semiconductor MC2 and metal-oxide-semiconductor MC3, the other end ground connection of described current source Ibg.
Described filter circuit comprises metal-oxide-semiconductor MA, metal-oxide-semiconductor MB and capacitor C 2, the grid of the grid of described metal-oxide-semiconductor MA and metal-oxide-semiconductor MB, the drain electrode that drain electrode connects respectively described metal-oxide-semiconductor M4, the source electrode of described metal-oxide-semiconductor MA is connected with the source electrode of metal-oxide-semiconductor MB, and described capacitor C 2 is in parallel to source electrode with draining of described metal-oxide-semiconductor MA.
Described ratio amplification module 200 comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3, metal-oxide-semiconductor MC4, metal-oxide-semiconductor MA and metal-oxide-semiconductor MB all adopt P-MOS.
Another object of the present invention is to provide a kind of integrated fully-differential amplifier, this fully-differential amplifier comprises the first filtration module 100, the second filtration module 300, ratio amplification module 200, the output of described the first filtration module 100 connects the input of described ratio amplification module 200, and the output of described the second filtration module 300 connects the input of described ratio amplification module 200; The structure of described the first filtration module 100, the second filtration module 300 is identical, it comprises multiple little current biasing circuits 10 and filter circuit, the output of described little current biasing circuit 10 connects the input of described filter circuit, the mutual cascade of described multiple little current circuit 10.
Described little current biasing circuit 10 comprises current source Ibg, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3 and metal-oxide-semiconductor MC4, described current source Ibg one end connects respectively the drain electrode of described metal-oxide-semiconductor M1, the grid of grid and metal-oxide-semiconductor M2, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected, the grid of described metal-oxide-semiconductor M3, the grid of drain electrode and metal-oxide-semiconductor M4 connects respectively the drain electrode of described metal-oxide-semiconductor MC4, the source electrode of described metal-oxide-semiconductor MC4 connects the drain electrode of described metal-oxide-semiconductor MC3, the grid of described metal-oxide-semiconductor MC4 connects respectively the grid of described metal-oxide-semiconductor MC3 and the grid of metal-oxide-semiconductor MC2, the grid of described metal-oxide-semiconductor MC2, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, the grid of described metal-oxide-semiconductor MC1, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, described metal-oxide-semiconductor MC1, the source ground of metal-oxide-semiconductor MC2 and metal-oxide-semiconductor MC3, the other end ground connection of described current source Ibg.
Described filter circuit comprises metal-oxide-semiconductor MA, metal-oxide-semiconductor MB and capacitor C 2, the grid of the grid of described metal-oxide-semiconductor MA and metal-oxide-semiconductor MB, the drain electrode that drain electrode connects respectively described metal-oxide-semiconductor M4, the source electrode of described metal-oxide-semiconductor MA is connected with the source electrode of metal-oxide-semiconductor MB, and described capacitor C 2 is in parallel to source electrode with draining of described metal-oxide-semiconductor MA.
Described ratio amplification module 200 comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v.
Described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3, metal-oxide-semiconductor MC4, metal-oxide-semiconductor MA and metal-oxide-semiconductor MB all adopt P-MOS.
Described multiple little current biasing circuit 10 is isolated mutually.
As shown in Figure 3, another object of the present invention is to the fully-differential amplifier that provides integrated, this fully-differential amplifier comprises the first filtration module 100, the second filtration module 300, ratio amplification module 200, the output of described the first filtration module 100 connects the input of described ratio amplification module 200, and the output of described the second filtration module 300 connects the input of described ratio amplification module 200; The structure of described the first filtration module, the second filtration module is identical, it comprises filter circuit, described filter circuit comprises virtual resistance Rf and capacitor C 2, described virtual resistance Rf is in parallel with described capacitor C 2, described virtual resistance comprises metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6, the source electrode of described metal-oxide-semiconductor M5 connects respectively grid, the drain electrode of described metal-oxide-semiconductor M6, and grid, the drain electrode of described metal-oxide-semiconductor M5 are connected.
Described ratio amplification module 200 comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M5, metal-oxide-semiconductor M6 all adopt P-MOS.
Adopt IC regime, realize the enlarging function of low frequency small-signal, and by full Embedded high pass filter function, solve under extremely low frequency scope, cause the restricted problem of multiplication factor because both-end input signal exists different DC differential pressures.
As shown in Figure 1, fully-differential amplifier comprises: both-end input both-end output fully-differential amplifier, electric capacity ratio structure for amplifying, little current biasing circuit.
Wherein both-end input both-end output fully-differential amplifier (OTA:operational transconductance amplifier) has high-gain, low-power consumption, low noise characteristic; Electric capacity and little current biasing circuit form feedback arrangement, realize high pass filter function, remove DC differential pressure impacts different in input signal; Electric capacity ratio amplifying circuit amplifies processing to small-signal;
OTA and four electric capacity form electric capacity ratio amplifying circuit, realize the enlarging function of gain A v, jointly realize cut-off frequency f with the virtual resistance being connected across on amplifier simultaneously
hphigh-pass filtering characteristic.
Wherein
Transfer function is suc as formula (1):
Because echo signal is in very low frequency range, as several hertz, therefore in order not affect the collection of useful signal, we need to be by the cut-off frequency f of high-pass filtering
hpf
hpbe arranged on this below frequency range, according to traditional filter structure, need very large resistance capacitance, be unfavorable at Embedded.In order to address this problem, we propose little current biasing circuit structure as shown in Figure 2, greatly reduce bias current by current distributing method, and its relational expression is:
Wherein Ibg is the band-gap reference electric current producing in integrated circuit chip.
Adopt GSMC0.18 μ m technique to carry out post-simulation by Cadence Spectre instrument, Fig. 4 is the amplitude-frequency response curve of this structure, from AC characteristic Simulation result, in the time that the little electric current of biasing is 10pA, high pass cut off frequency is 39.8Hz, in the time that the little electric current of biasing is 1pA, high pass cut off frequency is 3.16Hz, when emulation, capacitor C 1 is 12pF, and capacitor C 2 is 1.2pF, and result conforms to design substantially; If the value that continues to reduce bias current or increase capacitor C 2, can obtain lower cut-off frequency.
Said integrated circuit can be produced and be encapsulated by wafer factory and form independently fully-differential amplifier IC chip, or together with merging with other integrated circuit, encapsulates to reach into and have multi-functional packaged chip.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. an integrated fully-differential amplifier, it is characterized in that, this fully-differential amplifier comprises the first filtration module, the second filtration module, ratio amplification module, the output of described the first filtration module connects the input of described ratio amplification module, and the output of described the second filtration module connects the input of described ratio amplification module; The structure of described the first filtration module, the second filtration module is identical, and it comprises little current biasing circuit and filter circuit, and the output of described little current biasing circuit connects the input of described filter circuit.
2. fully-differential amplifier according to claim 1, is characterized in that, described little current biasing circuit comprises current source Ibg, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3 and metal-oxide-semiconductor MC4, described current source Ibg one end connects respectively the drain electrode of described metal-oxide-semiconductor M1, the grid of grid and metal-oxide-semiconductor M2, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected, the grid of described metal-oxide-semiconductor M3, the grid of drain electrode and metal-oxide-semiconductor M4 connects respectively the drain electrode of described metal-oxide-semiconductor MC4, the source electrode of described metal-oxide-semiconductor MC4 connects the drain electrode of described metal-oxide-semiconductor MC3, the grid of described metal-oxide-semiconductor MC4 connects respectively the grid of described metal-oxide-semiconductor MC3 and the grid of metal-oxide-semiconductor MC2, the grid of described metal-oxide-semiconductor MC2, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, the grid of described metal-oxide-semiconductor MC1, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, described metal-oxide-semiconductor MC1, the source ground of metal-oxide-semiconductor MC2 and metal-oxide-semiconductor MC3, the other end ground connection of described current source Ibg.
3. fully-differential amplifier according to claim 2, it is characterized in that, described filter circuit comprises metal-oxide-semiconductor MA, metal-oxide-semiconductor MB and capacitor C 2, the grid of the grid of described metal-oxide-semiconductor MA and metal-oxide-semiconductor MB, the drain electrode that drain electrode connects respectively described metal-oxide-semiconductor M4, the source electrode of described metal-oxide-semiconductor MA is connected with the source electrode of metal-oxide-semiconductor MB, and described capacitor C 2 is in parallel to source electrode with draining of described metal-oxide-semiconductor MA.
4. fully-differential amplifier according to claim 3, it is characterized in that, described ratio amplification module comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3, metal-oxide-semiconductor MC4, metal-oxide-semiconductor MA and metal-oxide-semiconductor MB all adopt P-MOS.
5. an integrated fully-differential amplifier, it is characterized in that, this fully-differential amplifier comprises the first filtration module, the second filtration module, ratio amplification module, the output of described the first filtration module connects the input of described ratio amplification module, and the output of described the second filtration module connects the input of described ratio amplification module; The structure of described the first filtration module, the second filtration module is identical, and it comprises multiple little current biasing circuits and filter circuit, and the output of described little current biasing circuit connects the input of described filter circuit, the mutual cascade of described multiple little current circuits.
6. fully-differential amplifier according to claim 5, is characterized in that, described little current biasing circuit comprises current source Ibg, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3 and metal-oxide-semiconductor MC4, described current source Ibg one end connects respectively the drain electrode of described metal-oxide-semiconductor M1, the grid of grid and metal-oxide-semiconductor M2, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected, the grid of described metal-oxide-semiconductor M3, the grid of drain electrode and metal-oxide-semiconductor M4 connects respectively the drain electrode of described metal-oxide-semiconductor MC4, the source electrode of described metal-oxide-semiconductor MC4 connects the drain electrode of described metal-oxide-semiconductor MC3, the grid of described metal-oxide-semiconductor MC4 connects respectively the grid of described metal-oxide-semiconductor MC3 and the grid of metal-oxide-semiconductor MC2, the grid of described metal-oxide-semiconductor MC2, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, the grid of described metal-oxide-semiconductor MC1, drain electrode connects respectively the drain electrode of described metal-oxide-semiconductor M2, described metal-oxide-semiconductor MC1, the source ground of metal-oxide-semiconductor MC2 and metal-oxide-semiconductor MC3, the other end ground connection of described current source Ibg.
7. fully-differential amplifier according to claim 6, it is characterized in that, described filter circuit comprises metal-oxide-semiconductor MA, metal-oxide-semiconductor MB and capacitor C 2, the grid of the grid of described metal-oxide-semiconductor MA and metal-oxide-semiconductor MB, the drain electrode that drain electrode connects respectively described metal-oxide-semiconductor M4, the source electrode of described metal-oxide-semiconductor MA is connected with the source electrode of metal-oxide-semiconductor MB, and described capacitor C 2 is in parallel to source electrode with draining of described metal-oxide-semiconductor MA.
8. fully-differential amplifier according to claim 7, it is characterized in that, described ratio amplification module comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, metal-oxide-semiconductor MC1, metal-oxide-semiconductor MC2, metal-oxide-semiconductor MC3, metal-oxide-semiconductor MC4, metal-oxide-semiconductor MA and metal-oxide-semiconductor MB all adopt P-MOS, described multiple little current biasing circuit is isolated mutually.
9. an integrated fully-differential amplifier, it is characterized in that, this fully-differential amplifier comprises the first filtration module, the second filtration module, ratio amplification module, the output of described the first filtration module connects the input of described ratio amplification module, and the output of described the second filtration module connects the input of described ratio amplification module; The structure of described the first filtration module, the second filtration module is identical, it comprises filter circuit, described filter circuit comprises virtual resistance Rf and capacitor C 2, described virtual resistance Rf is in parallel with described capacitor C 2, described virtual resistance comprises metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6, the source electrode of described metal-oxide-semiconductor M5 connects respectively grid, the drain electrode of described metal-oxide-semiconductor M6, and grid, the drain electrode of described metal-oxide-semiconductor M5 are connected.
10. fully-differential amplifier according to claim 9, it is characterized in that, described ratio amplification module comprises the fully-differential amplifier OTA of both-end input both-end output, two capacitor C 1, two capacitor C 2, the positive input terminal of described fully-differential amplifier OTA connects one end of capacitor C 1 described in one of them, described in one of them, capacitor C 2 is in parallel to negative output terminal with the positive input terminal of described fully-differential amplifier OTA, the negative input end of described fully-differential amplifier OTA connects wherein one end of another capacitor C 1, wherein described in another, capacitor C 2 is in parallel to positive output end with the negative input end of described fully-differential amplifier OTA, described fully-differential amplifier OTA and four electric capacity form electric capacity ratio amplifying circuit realizes the amplification of gain A v, described metal-oxide-semiconductor M5, metal-oxide-semiconductor M6 all adopt P-MOS.
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