CN103762947A - Cross-coupling input low-noise trans-conductance amplifier - Google Patents
Cross-coupling input low-noise trans-conductance amplifier Download PDFInfo
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- CN103762947A CN103762947A CN201410015029.7A CN201410015029A CN103762947A CN 103762947 A CN103762947 A CN 103762947A CN 201410015029 A CN201410015029 A CN 201410015029A CN 103762947 A CN103762947 A CN 103762947A
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Abstract
The invention discloses a cross-coupling input low-noise trans-conductance amplifier with a noise cancellation property. The amplifier comprises a cross-coupling input-stage amplifier, an off-chip receiving network and an isolating circuit. The cross-coupling input-stage amplifier comprises a first type-N metal oxide transistor, a second type-N metal oxide transistor, a third type-P metal oxide transistor, a fourth type-P metal oxide transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor, a third capacitor and a fourth capacitor; the isolating circuit comprises a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth capacitor, a sixth capacitor, a seventh capacitor and an eighth capacitor; the off-chip receiving network comprises a ninth capacitor, a tenth capacitor, a fifth inductor, a sixth inductor, a signal source of an artificial antenna and an antenna internal resistor. The cross-coupling input low-noise trans-conductance amplifier with the structure has the advantages of noise cancellation function and cross-coupling input and low-power-consumption properties.
Description
Technical field
The present invention relates to a kind of amplifier, particularly a kind of low noise trsanscondutance amplifier with noise cancelling capabilities of cross-couplings input.
Background technology
In radiofrequency signal receiver, low noise amplifier is the first utmost point active circuit of receiver, and itself has very low noise factor and enough gains are provided.From whole receiver, consider, low noise amplifier should have higher gain impact on whole receiver noise with the noise that suppresses rear utmost point radio circuit and intermediate-frequency circuit.In addition, low noise amplifier itself should have lower noise factor to alleviate the design pressure of frequency mixer.Along with multi-transceiver technology and complex modulation technology are applied in wireless telecommunications more and more, the requirement of receiver various performance parameters is also improved gradually.Due to the restriction of metal-oxide-semiconductor (MOS transistor) cut-off frequency, be difficult to radio circuit to adopt such as amplifier feedback, mutual conductance bootstrapping etc. to improve the technology of performance.This can not can the various Analog Circuit Design methods of flexible Application be optimized and compromise radio circuit as intermediate-frequency circuit.Low noise amplifier is positioned at first utmost point of radio-frequency (RF) front-end circuit, and according to the formula of the cascade noise coefficient of system, low noise amplifier plays conclusive effect to the impact of the noise factor of whole radio circuit.In sum, the noise factor of reduction low noise amplifier is the target that designer constantly pursues.
The structure of traditional low noise amplifier roughly can be divided into the low noise amplifier of common source and the low noise amplifier of common gate.Common source low noise amplifier, signal is inputted from grid.In order to realize impedance matching, reach the object of signal optimal transmission, generally, at a source-electrode degradation inductance of source electrode access, the impedance of seeing into from grid has real part.Grid input stage amplifier altogether, signal is inputted from source electrode, if the equiva lent impedance that source electrode is seen into equate with the internal resistance of antenna, capable of realizing impedance matching.Yet these two kinds of traditional amplifiers all have relatively high noise factor, the noise factor that reduces low noise amplifier mainly contains the important method such as noise cancellation and cross-couplings input.
It is that signal is amplified by two branch roads that the low noise amplifier of noise cancellation structure has a variety of, general thinkings, at output, obtains difference or single-ended output signal.The noise producing for same device remains relevant noise voltage signal after two branch roads.Adopt suitable circuit ride gain and phase difference, when amplifying radiofrequency signal, offset the noise that corresponding device produces, so just can reach by the method for difference or single-ended counteracting the object of noise cancellation.Also can understand by another kind of mode, signal amplifies by two branch roads, meanwhile, only has the noise of device in a branch road or the noise of the part of devices in additional another branch road to exert an influence at output.Like this, the noise voltage of output remains on the numerical value of single branch amplifier of identical gain, and the gain height of the ratio of gains list branch amplifier of signal 6dB (put and be twice).So just reached relatively low noise factor.
Cross-couplings input technology is mainly to adopt the MOS transistor of a pair of mutual coupling as the input pipe of low noise amplifier, utilize electric capacity that the source electrode of the grid of one of them MOS transistor of the MOS transistor of a pair of mutual coupling and another metal oxide is linked together, so just formed cross-couplings input.The grid of each MOS transistor and source electrode connect opposite polarity radiofrequency signal.Like this, in the situation that the size of MOS transistor is identical with bias voltage, the actual mutual conductance of each MOS transistor has increased one times.Therefore, in the situation that identical power consumption and noise current, the gain of low noise amplifier has increased one times, and then plays the effect that reduces low noise amplifier noise factor.
According to the formula of noise factor, improve the gain of low noise amplifier the optimization of noise factor is played to important effect.And high-gain generally using direct current or power consumption as cost, in the structure of ohmic load, the pressure drop that large bias current produces is attached on load resistance, is therefore wasted.
Summary of the invention
Goal of the invention: for above-mentioned prior art, provide a kind of low noise trsanscondutance amplifier of cross-couplings input, the traditional cross-couplings input structure of noise ratio of this low noise trsanscondutance amplifier has lower noise and power consumption; Solve conventional cross coupling input structure simultaneously and when larger bias current, on load resistance, produce the problem of larger voltage drop.
Technical scheme: for solving the problems of the technologies described above, the structure that the present invention adopts is a kind of noise cancellation low noise trsanscondutance amplifier of cross-couplings input, and this amplifier comprises cross-couplings input stage amplifier, sheet and accepts network and buffer circuit outward; Described cross-couplings input stage amplifier comprises the first N-type MOS transistor, the second N-type MOS transistor, the 3rd P type MOS transistor, the 4th P type MOS transistor, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity; Described buffer circuit comprises the first inductance, the second inductance, the 3rd inductance, the 4th inductance, the 5th electric capacity, the 6th electric capacity, the 7th electric capacity, the 8th electric capacity; Accept signal source and the antenna internal resistance that network packet is drawn together the 9th electric capacity, the tenth electric capacity, the 5th inductance, the 6th inductance, artificial antenna outward for described.
The source electrode of the negative terminal of the bottom crown of the 6th electric capacity and the 3rd inductance, the top crown of the 3rd electric capacity, the 3rd P type MOS transistor is connected; The source electrode of the anode of the bottom crown of the 5th electric capacity and the first inductance, the top crown of the first electric capacity, the first N-type MOS transistor is connected; The top crown of the 6th electric capacity is connected with the top crown of the 5th electric capacity, and as the anode of the input signal of low noise trsanscondutance amplifier; The source electrode of the anode of the bottom crown of the 8th electric capacity and the second inductance, the top crown of the second electric capacity, the second N-type MOS transistor is connected; The source electrode of the negative terminal of the bottom crown of the 7th electric capacity and the 4th inductance, the top crown of the 4th electric capacity, the 4th P type MOS transistor is connected; The top crown of the 8th electric capacity is connected with the top crown of the 7th electric capacity, and as the negative terminal of the input signal of low noise trsanscondutance amplifier; The anode of the grid of the first N-type MOS transistor and the first resistance, the bottom crown of the second electric capacity are connected; The anode of the grid of the second N-type MOS transistor and the second resistance, the bottom crown of the first electric capacity are connected; The bottom crown of the 3rd grid of P type MOS transistor and the anode of the 3rd resistance, the 4th electric capacity is connected; The bottom crown of the 4th grid of P type MOS transistor and the anode of the 4th resistance, the 3rd electric capacity is connected; The drain electrode of the first N-type MOS transistor is connected with the drain electrode of the 3rd P type MOS transistor, and as the anode of low noise trsanscondutance amplifier output signal; The drain electrode of the second N-type MOS transistor is connected with the drain electrode of the 4th P type MOS transistor, and as the negative terminal of low noise trsanscondutance amplifier output signal; The negative terminal of the 4th resistance is connected with the negative terminal of the 3rd resistance, and meets fixed voltage Vbias2, for the grid of the 4th P type MOS transistor and the grid of the 3rd P type MOS transistor provide direct current biasing; The negative terminal of the second resistance is connected with the negative terminal of the first resistance, and meets fixed voltage Vbias1, for the grid of the first N-type MOS transistor and the grid of the second N-type MOS transistor provide direct current biasing; The negativing ending grounding of the negative terminal of the first inductance and the second inductance; The positive termination supply voltage of the anode of the 3rd inductance and the 4th inductance.
The signal source of the described artificial antenna of accepting network outward and the input that antenna internal resistance is arranged on low noise trsanscondutance amplifier, the output of the signal source of artificial antenna is connected with one end of antenna internal resistance; The top crown of the anode of the 6th inductance, the 9th electric capacity is connected with the other end of antenna internal resistance; The anode of the bottom crown of the 9th electric capacity and the 5th inductance is connected to the anode of the input signal of described low noise trsanscondutance amplifier; The top crown of the negative terminal of the 6th inductance and the tenth electric capacity is connected to the negative terminal of the input signal of described low noise trsanscondutance amplifier; The negative terminal of the 5th inductance and, the bottom crown ground connection of the tenth electric capacity.
Beneficial effect: compared with prior art, the present invention has following beneficial effect:
1. noise factor is low.The first order of low noise trsanscondutance amplifier of the present invention in receiver system, plays crucial effect to the contribution of system noise.Low noise trsanscondutance amplifier of the present invention has reduced the noise factor of circuit from two angles:
The first, adopt noise cancellation technique.Circuit of the present invention amplifies signal by two branch roads of the first N-type MOS transistor and the 3rd P type MOS transistor and the second N-type MOS transistor and the 4th P type MOS transistor composition, at difference output end, obtains the noise signal that opposite polarity radiofrequency signal is identical with polarity.By positive and negative two outputs, subtract each other the object that reaches noise cancellation.
The second, adopt cross-couplings input.Low noise trsanscondutance amplifier of the present invention adopts laterally zygomorphic cross-couplings input, in the situation that identical DC point, the actual mutual conductance of input MOS transistor is doubled, improve the gain of whole low noise trsanscondutance amplifier, therefore reduced the noise factor of circuit.
2. electric current utilization ratio is high, low in energy consumption.Traditional cross-couplings input structure is usingd the MOS transistor of a pair of mutual coupling as input pipe, usings resistance as load.Low noise trsanscondutance amplifier of the present invention adopts two pairs of MOS transistors that mutually mate as input pipe, and the MOS transistor of simultaneously every a pair of mutual coupling is again another load to the MOS transistor of mutual coupling.Compare with traditional cross coupling structure, low noise trsanscondutance amplifier of the present invention is the in the situation that of identical gain and noise factor, and power consumption is half of traditional structure; Because two pairs of MOS transistors that mutually mate are each other as the other side's load, do not adopt ohmic load simultaneously, therefore solved the larger voltage drop producing when larger bias current on load resistance.
Accompanying drawing explanation
Fig. 1 is chip internal circuit diagram of the present invention;
Fig. 2 is that the sheet of circuit structure of the present invention is accepted network outward;
Fig. 3 is the simulation result figure that the present invention and traditional low noise trsanscondutance amplifier carry out noise factor comparison.
Embodiment
Below in conjunction with accompanying drawing, the present invention is done further and explained.
As shown in Figure 1, a kind of low noise trsanscondutance amplifier of cross-couplings input, this amplifier comprises cross-couplings input stage amplifier, sheet and accepts network and buffer circuit outward.Cross-couplings input stage amplifier comprises the first N-type MOS transistor M1, the second N-type MOS transistor M2, the 3rd P type MOS transistor M3, the 4th P type MOS transistor M4, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the first capacitor C 1, the second capacitor C 2, the 3rd capacitor C 3, the 4th capacitor C 4.Buffer circuit comprises the first inductance L 1, the second inductance L 2, the 3rd inductance L 3, the 4th inductance L 4, the 5th capacitor C 5, the 6th capacitor C 6, the 7th capacitor C 7, the 8th capacitor C 8.Sheet is accepted the signal source V that network packet is drawn together the 9th capacitor C 9, the tenth capacitor C 10, the 5th inductance L 5, the 6th inductance L 6, artificial antenna outward
inwith antenna internal resistance R
s.
The 6th capacitor C
6bottom crown and the 3rd inductance L
3negative terminal, the 3rd capacitor C
3top crown, the 3rd P type MOS transistor M
3source electrode connect; The 5th capacitor C
5bottom crown and the first inductance L
1anode, the first capacitor C
1top crown, the first N-type MOS transistor M
1source electrode connect.The 6th capacitor C
6top crown and the 5th capacitor C
5top crown connect, and as the anode V of the input signal of low noise trsanscondutance amplifier
inp.The 8th capacitor C
8bottom crown and the second inductance L
2anode, the second capacitor C
2top crown, the second N-type MOS transistor M
2source electrode connect.The 7th capacitor C
7bottom crown and the 4th inductance L
4negative terminal, the 4th capacitor C
4top crown, the 4th P type MOS transistor M
4source electrode connect.The 8th capacitor C
8top crown and the 7th capacitor C
7top crown connect, and as the negative terminal V of the input signal of low noise trsanscondutance amplifier
inn.The first N-type MOS transistor M
1grid and the first resistance R
1anode, the second capacitor C
2bottom crown connect.The second N-type MOS transistor M
2grid and the second resistance R
2anode, the first capacitor C
1bottom crown connect.The 3rd P type MOS transistor M
3grid and the 3rd resistance R
3anode, the 4th capacitor C
4bottom crown connect.The 4th P type MOS transistor M
4grid and the 4th resistance R
4anode, the 3rd capacitor C
3bottom crown connect.The first N-type MOS transistor M
1drain electrode and the 3rd P type MOS transistor M
3drain electrode connect, and as the anode V of low noise trsanscondutance amplifier output signal
out+.The second N-type MOS transistor M
2drain electrode and the 4th P type MOS transistor M
4drain electrode connect, and as the negative terminal V of the output signal of low noise trsanscondutance amplifier
out-.The 4th resistance R
4negative terminal and the 3rd resistance R
3negative terminal connect, and meet fixed voltage Vbias2, be the 4th P type MOS transistor M
4grid and the 3rd P type MOS transistor M
3grid direct current biasing is provided, in the present embodiment, Vbias2 value is 1.2V.The second resistance R
2negative terminal and the first resistance R
1negative terminal connect, and meet fixed voltage Vbias1, be the first N-type MOS transistor M
1grid and the second N-type MOS transistor M
2grid direct current biasing is provided, in the present embodiment, Vbias1 value is 0.55V.The first inductance L
1negative terminal and the second inductance L
2negativing ending grounding.The 3rd inductance L
3anode and the 4th inductance L
4positive termination supply voltage, in the present embodiment, this supply voltage value is 1.8V.
Sheet is accepted the signal source V of the artificial antenna of network outward
inwith antenna internal resistance R
sbe arranged on the input of low noise trsanscondutance amplifier, the signal source V of artificial antenna
inoutput and antenna internal resistance R
sone end connect.The 6th inductance L
6anode, the 9th capacitor C
9top crown and antenna internal resistance R
sthe other end be connected.The 9th capacitor C
9bottom crown and the 5th inductance L
5anode be connected to the anode V of the input signal of described low noise trsanscondutance amplifier
inp.The 6th inductance L
6negative terminal and the tenth capacitor C
10top crown be connected to the negative terminal V of the input signal of described low noise trsanscondutance amplifier
inn.The 5th inductance L
5negative terminal and, the tenth capacitor C
10bottom crown ground connection.
The noise cancellation low noise trsanscondutance amplifier of above-mentioned cross-couplings input, the first N-type MOS transistor M that has offset cross-couplings input stage amplifier
1, the second N-type MOS transistor M
2, the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4at the noise of output, and adopt cross-couplings input, the actual mutual conductance that has improved MOS transistor.Signal isolation network of the present invention comprises by the first inductance L
1, the second inductance L
2, the 3rd inductance L
3, the 4th inductance L
4, the first capacitor C
1, the second capacitor C
2, the 3rd capacitor C
3, the 4th capacitor C
4, the 5th capacitor C
5, the 6th capacitor C
6, the 7th capacitor C
7with the 8th capacitor C
8, the first inductance L
1, the second inductance L
2, the 3rd inductance L
3, and the 4th inductance L
4main Function be that perfectly straight flow resistance exchanges.The first capacitor C
1, the second capacitor C
2, the 3rd capacitor C
3, the 4th capacitor C
4, the 5th capacitor C
5, the 6th capacitor C
6, the 7th capacitor C
7with the 8th capacitor C
8main Function to be that resistance direct current is logical exchange.
This low noise trsanscondutance amplifier utilizes the method for noise cancellation to greatly reduce the noise factor of circuit.Radiofrequency signal flows through by the first N-type MOS transistor M
1with the 3rd P type MOS transistor M
3and the second N-type MOS transistor M
2with the 4th P type MOS transistor M
4two branch roads that form, at the contrary signal of difference output end polarization; The first N-type MOS transistor M
1, the second N-type MOS transistor M
2, the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4noise current at the identical signal of difference output end polarization.By the signal subtraction of positive-negative output end, can reach the object of noise cancellation, in the situation that mating completely, can balance out the first N-type MOS transistor M completely
1, the second N-type MOS transistor M
2, the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4the noise producing at output.
Matching network of the present invention comprises the 5th inductance L
5, the 6th inductance L
6, the 9th capacitor C
9with the tenth capacitor C
10.Of the present invention outer differential networks is L-type matching network.The signal source V of artificial antenna is set at the input of low noise trsanscondutance amplifier
inand antenna internal resistance R
s.The signal source V of artificial antenna
inreceived RF signal, then by the outer matching network of sheet and the 5th capacitor C
5, the 6th capacitor C
6, the 7th capacitor C
7with the 8th capacitor C
8be ac-coupled to the first N-type MOS transistor M
1source, the 3rd P type MOS transistor M
3source, the second N-type MOS transistor M
2source electrode and the 4th P type MOS transistor M
4source.The first N-type MOS transistor M
1source, the 3rd P type MOS transistor M
3source, the second N-type MOS transistor M
2grid and the 4th P type MOS transistor M
4grid by the 5th capacitor C
5, the 6th capacitor C
6, the 3rd capacitor C
3with the first capacitor C
1link together, as the anode of input signal.The first N-type MOS transistor M
1grid end, the 3rd P type MOS transistor M
3grid end, the second N-type MOS transistor M
2source electrode and the 4th P type MOS transistor M
4source electrode by the 4th capacitor C
4, the second capacitor C
2, the 7th capacitor C
7with the 8th capacitor C
8link together, as the negative terminal of input signal.Whole circuit has symmetrical structure up and down.The grid of each MOS transistor is connected respectively different signal input parts with source electrode, has improved so the actual mutual conductance of MOS transistor, the in the situation that of same power consumption, has improved gain, has reduced the noise factor of circuit simultaneously.
The present invention is with the first N-type MOS transistor M
1with the 3rd P type MOS transistor M
3the drain electrode anode V that is output
out+; With the second N-type MOS transistor M
2with the 4th P type MOS transistor M
4the drain electrode negative terminal V that is output
out-.The first N-type MOS transistor M
1with the 3rd P type MOS transistor M
3drain electrode and the second N-type MOS transistor M
2with the 4th P type MOS transistor M
4drain electrode there is larger input impedance, therefore can improve larger signal gain.For flowing through the first N-type MOS transistor M
1noise current, one end of noise current is flow through by the 3rd inductance L
3, the first inductance L
1, the first N-type MOS transistor M
1with the 3rd P type MOS transistor M
3the branch road forming; The other end of noise current flows through by the second inductance L
2, the 4th inductance L
4, the second N-type MOS transistor M
2with the 4th P type MOS transistor M
4the branch road forming.This noise current is at the anode V of output
out+negative terminal V with output
out-the noise voltage that polarization is identical, is subtracted each other and can be eliminated the noise voltage that this noise current produces by both; Same reason can be offset respectively and flow through the second N-type MOS transistor M
2, the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4noise current.In order to meet above-mentioned functions, require to arrange the first N-type MOS transistor M
1mutual conductance, the second N-type MOS transistor M
2mutual conductance, the 3rd P type MOS transistor M
3mutual conductance and the 4th P type MOS transistor M
4mutual conductance identical.
This low noise trsanscondutance amplifier adopts laterally zygomorphic cross-couplings input, the first N-type MOS transistor M
1, the second N-type MOS transistor M
2, the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4all cross-couplings input transistors.By offsetting the first N-type MOS transistor M
1, the second N-type MOS transistor M
2, the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4at the noise voltage of output generation, reduced the noise factor of amplifier; , compare with traditional cross coupling structure, the low noise trsanscondutance amplifier of this structure adopts two pairs of MOS transistors that mutually mate as input pipe meanwhile.Meanwhile, the MOS transistor of every a pair of mutual coupling is again another load to the MOS transistor of mutual coupling, i.e. the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4in as cross-couplings input transistors, be also the first N-type MOS transistor M
1with the second N-type MOS transistor M
2load; Same, the first N-type MOS transistor M
1with the second N-type MOS transistor M
2in as cross-couplings input transistors, be also the 3rd P type MOS transistor M
3with the 4th P type MOS transistor M
4load.Thereby under the requirement of same gain and noise factor, the power consumption of low noise trsanscondutance amplifier of the present invention is half of conventional cross coupling input structure.And because the MOS transistor of every a pair of mutual coupling is again another load to the MOS transistor of mutual coupling, do not adopt ohmic load, avoided circuit when larger bias current, on ohmic load, to produce larger voltage drop.
Below by simulation comparison, illustrate that the present invention has advantages of low-noise factor and low-power consumption.
Adopt
simulation software carries out the simulation comparison of low noise trsanscondutance amplifier noise factor.Contrast is to liking amplifier of the present invention and traditional common source low noise trsanscondutance amplifier.
As shown in Figure 3, abscissa represents the frequency of input radio frequency signal to simulation comparison result, the Hz of unit, and ordinate represents noise factor, the dB of unit.As can be seen from Figure 3, when low noise trsanscondutance amplifier of the present invention is operated near 433MHz, noise factor can reach 1.54dB.And near the noise factor of traditional cross-couplings input stage low noise trsanscondutance amplifier while working this frequency is about 3.2dB.Low noise trsanscondutance amplifier of the present invention approaches 1.66dB to the optimization of noise factor.The bias current of this structure is only half of traditional cross-couplings input stage low noise trsanscondutance amplifier.Compare with traditional cross-couplings input stage low noise trsanscondutance amplifier with identical gain, the present invention has lower power and noise factor.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (1)
1. a low noise trsanscondutance amplifier for cross-couplings input, is characterized in that: this amplifier comprises cross-couplings input stage amplifier, sheet and accepts network and buffer circuit outward; Described cross-couplings input stage amplifier comprises the first N-type MOS transistor (M1), the second N-type MOS transistor (M2), the 3rd P type MOS transistor (M3), the 4th P type MOS transistor (M4), the first resistance (R1), the second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4), the first electric capacity (C1), the second electric capacity (C2), the 3rd electric capacity (C3), the 4th electric capacity (C4); Described buffer circuit comprises the first inductance (L1), the second inductance (L2), the 3rd inductance (L3), the 4th inductance (L4), the 5th electric capacity (C5), the 6th electric capacity (C6), the 7th electric capacity (C7), the 8th electric capacity (C8); Accept the signal source (V that network packet is drawn together the 9th electric capacity (C9), the tenth electric capacity (C10), the 5th inductance (L5), the 6th inductance (L6), artificial antenna outward for described
in) and antenna internal resistance (R
s);
Described the 6th electric capacity (C
6) bottom crown and the 3rd inductance (L
3) negative terminal, the 3rd electric capacity (C
3) top crown, the 3rd P type MOS transistor (M
3) source electrode connect; The 5th electric capacity (C
5) bottom crown and the first inductance (L
1) anode, the first electric capacity (C
1) top crown, the first N-type MOS transistor (M
1) source electrode connect; The 6th electric capacity (C
6) top crown and the 5th electric capacity (C
5) top crown connect, and as the anode (V of the input signal of low noise trsanscondutance amplifier
inp); The 8th electric capacity (C
8) bottom crown and the second inductance (L
2) anode, the second electric capacity (C
2) top crown, the second N-type MOS transistor (M
2) source electrode connect; The 7th electric capacity (C
7) bottom crown and the 4th inductance (L
4) negative terminal, the 4th electric capacity (C
4) top crown, the 4th P type MOS transistor (M
4) source electrode connect; The 8th electric capacity (C
8) top crown and the 7th electric capacity (C
7) top crown connect, and as the negative terminal (V of the input signal of low noise trsanscondutance amplifier
inn); The first N-type MOS transistor (M
1) grid and the first resistance (R
1) anode, the second electric capacity (C
2) bottom crown connect; The second N-type MOS transistor (M
2) grid and the second resistance (R
2) anode, the first electric capacity (C
1) bottom crown connect; The 3rd P type MOS transistor (M
3) grid and the 3rd resistance (R
3) anode, the 4th electric capacity (C
4) bottom crown connect; The 4th P type MOS transistor (M
4) grid and the 4th resistance (R
4) anode, the 3rd electric capacity (C
3) bottom crown connect; The first N-type MOS transistor (M
1) drain electrode and the 3rd P type MOS transistor (M
3) drain electrode connect, and as the anode (V of low noise trsanscondutance amplifier output signal
out+); The second N-type MOS transistor (M
2) drain electrode and the 4th P type MOS transistor (M
4) drain electrode connect, and as the negative terminal (V of the output signal of low noise trsanscondutance amplifier
out-); The 4th resistance (R
4) negative terminal and the 3rd resistance (R
3) negative terminal connect, and meet fixed voltage Vbias2, be the 4th P type MOS transistor (M
4) grid and the 3rd P type MOS transistor (M
3) grid direct current biasing is provided; The second resistance (R
2) negative terminal and the first resistance (R
1) negative terminal connect, and meet fixed voltage Vbias1, be the first N-type MOS transistor (M
1) grid and the second N-type MOS transistor (M
2) grid direct current biasing is provided; The first inductance (L
1) negative terminal and the second inductance (L
2) negativing ending grounding; The 3rd inductance (L
3) anode and the 4th inductance (L
4) positive termination supply voltage;
Described signal source (V that accepts the artificial antenna of network outward
in) and antenna internal resistance (R
s) be arranged on the input of low noise trsanscondutance amplifier, the signal source (V of artificial antenna
in) output and antenna internal resistance (R
s) one end connect; The 6th inductance (L
6) anode, the 9th electric capacity (C
9) top crown and antenna internal resistance (R
s) the other end be connected; The 9th electric capacity (C
9) bottom crown and the 5th inductance (L
5) anode be connected to the anode (V of the input signal of described low noise trsanscondutance amplifier
inp); The 6th inductance (L
6) negative terminal and the tenth electric capacity (C
10) top crown be connected to the negative terminal (V of the input signal of described low noise trsanscondutance amplifier
inn); The 5th inductance (L
5) negative terminal and, the tenth electric capacity (C
10) bottom crown ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410015029.7A CN103762947B (en) | 2014-01-13 | 2014-01-13 | A kind of low noise trsanscondutance amplifier of cross-couplings input |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410015029.7A CN103762947B (en) | 2014-01-13 | 2014-01-13 | A kind of low noise trsanscondutance amplifier of cross-couplings input |
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| Publication Number | Publication Date |
|---|---|
| CN103762947A true CN103762947A (en) | 2014-04-30 |
| CN103762947B CN103762947B (en) | 2016-05-18 |
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Cited By (7)
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| CN104467714A (en) * | 2014-10-17 | 2015-03-25 | 中国科学院微电子研究所 | Operational amplifier circuit, operational amplifier and envelope follower power supply |
| CN106817085A (en) * | 2017-01-19 | 2017-06-09 | 中国科学院上海高等研究院 | A kind of radio frequency low-noise amplifier and its implementation |
| CN107493077A (en) * | 2017-09-01 | 2017-12-19 | 无锡泽太微电子有限公司 | A kind of wideband low noise amplifier circuit of Low-voltage Low-power |
| CN110785925A (en) * | 2019-09-26 | 2020-02-11 | 深圳市汇顶科技股份有限公司 | Transconductance amplifier and chip |
| CN112491371A (en) * | 2020-11-26 | 2021-03-12 | 北京百瑞互联技术有限公司 | High-linearity programmable AB-C mixed transconductance low-noise transconductance amplifier |
| CN112671350A (en) * | 2020-12-28 | 2021-04-16 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
| CN113647958A (en) * | 2021-07-20 | 2021-11-16 | 广州大学 | ECG signal detection circuit suitable for wearable equipment |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104467714A (en) * | 2014-10-17 | 2015-03-25 | 中国科学院微电子研究所 | Operational amplifier circuit, operational amplifier and envelope follower power supply |
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| CN106817085A (en) * | 2017-01-19 | 2017-06-09 | 中国科学院上海高等研究院 | A kind of radio frequency low-noise amplifier and its implementation |
| CN107493077A (en) * | 2017-09-01 | 2017-12-19 | 无锡泽太微电子有限公司 | A kind of wideband low noise amplifier circuit of Low-voltage Low-power |
| CN110785925A (en) * | 2019-09-26 | 2020-02-11 | 深圳市汇顶科技股份有限公司 | Transconductance amplifier and chip |
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| CN112491371A (en) * | 2020-11-26 | 2021-03-12 | 北京百瑞互联技术有限公司 | High-linearity programmable AB-C mixed transconductance low-noise transconductance amplifier |
| CN112491371B (en) * | 2020-11-26 | 2024-03-22 | 北京百瑞互联技术股份有限公司 | High-linearity programmable AB-C class mixed transconductance low-noise transconductance amplifier |
| CN112671350A (en) * | 2020-12-28 | 2021-04-16 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
| CN112671350B (en) * | 2020-12-28 | 2022-01-04 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
| CN113647958A (en) * | 2021-07-20 | 2021-11-16 | 广州大学 | ECG signal detection circuit suitable for wearable equipment |
| CN113647958B (en) * | 2021-07-20 | 2023-08-29 | 广州大学 | ECG signal detection circuit suitable for wearable equipment |
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