CN106249023B - A kind of micro-current sensing circuit - Google Patents

A kind of micro-current sensing circuit Download PDF

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Publication number
CN106249023B
CN106249023B CN201610554311.1A CN201610554311A CN106249023B CN 106249023 B CN106249023 B CN 106249023B CN 201610554311 A CN201610554311 A CN 201610554311A CN 106249023 B CN106249023 B CN 106249023B
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nmos transistor
resistor
source
drain
amplifier
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CN106249023A (en
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周泽坤
龚宏国
刘程嗣
石跃
王卓
张波
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof

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  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)

Abstract

本发明属于电子电路技术领域，涉及一种微电流检测电路。本发明的宽带微电流检测电路分为前后两级，前级为低输入阻抗的跨阻放大器，在足够宽的带宽下实现电路的主要跨阻增益；后级为电压增益级，为电路提供一定的增益和增加电路驱动能力。本发明可以实现几十兆赫兹以上的带宽和超过106量级的跨阻增益。

The invention belongs to the technical field of electronic circuits, and relates to a micro-current detection circuit. The broadband micro-current detection circuit of the present invention is divided into two stages: the front stage is a transimpedance amplifier with low input impedance, which realizes the main transimpedance gain of the circuit under a sufficiently wide bandwidth; the latter stage is a voltage gain stage, which provides certain gain and increase the circuit drive capability. The invention can realize a bandwidth of more than tens of megahertz and a transimpedance gain of the order of more than 10 6 .

Description

A kind of micro-current sensing circuit
Technical field
The invention belongs to electronic circuit technology fields, are related to a kind of micro-current sensing circuit.
Background technique
In high speed optoelectronic integrated circuit (OEIC), photodiode receives optical signal and generates faint current signal, Current signal is converted to voltage signal by trans-impedance amplifier.Speed and noise-induced of the prime micro-current sensing circuit to whole system There can be vital influence.Its core is to convert voltage letter for the weak current that photoelectric tube generates by trans-impedance amplifier Number.Since the electric current that photoelectric tube generates is smaller, it is desirable that prime current detection circuit has enough gains；And photoelectric tube is parasitic Capacitor is big, under high-speed applications, it is desirable that circuit has enough bandwidth, therefore current detection circuit needs have in higher frequency band There is sufficiently small input impedance.Especially in special applications, light intensity is smaller, and photoelectric tube area is bigger, the bigger feelings of parasitic capacitance Condition will make circuit have biggish output voltage swing and conversion speed, and with greater need for high-gain, the micro-current of low input impedance detects electricity Road.
In traditional micro-current sensing circuit system, since photoelectric tube area is smaller, photoelectric tube parasitic capacitance is small.Turn simultaneously The voltage signal magnitude exported after changing is also smaller, thus gain to current detection circuit and input impedance require it is small.It is existing Micro-current sensing circuit cannot be considered in terms of the requirement of high-gain and high speed, can not be suitable for the application that photosurface is big, optical responsivity is low.
Summary of the invention
It is to be solved by this invention, it not can be implemented simultaneously high-gain and height aiming at above-mentioned existing micro-current sensing circuit The limitation of bandwidth, not wide enough the problem of bandwidth especially in the big situation of photoelectric tube parasitic capacitance.Propose a kind of new broadband High-gain micro-current sensing circuit.
The technical scheme is that a kind of micro-current sensing circuit, including photodiode, prime trans-impedance amplifier, Rear class voltage amplifier and biasing circuit；The prime trans-impedance amplifier is by first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 6th resistance R6, the 9th resistance RF1, the tenth resistance RF2, eleventh resistor RF3, first capacitor CF1, One NMOS tube M1, the second NMOS tube M2, third NMOS tube M3, the 4th NMOS tube M4, the 5th NMOS tube M5, the 6th NMOS tube M6 and PMOS tube MP0 is constituted；The grid of first NMOS tube M1 connects the cathode of photodiode, the plus earth of photodiode, and first The drain electrode of NMOS tube M1 is followed by power supply, the source electrode ground connection of the first NMOS tube M1 by first resistor R1；The grid of second NMOS tube M2 Pole connects the drain electrode of the first NMOS tube M1, and the drain electrode of the second NMOS tube M2 connects power supply, and the source electrode of the second NMOS tube M2 passes through the second electricity It is grounded after resistance R2；The drain electrode of third NMOS tube M3 is followed by power supply by 3rd resistor R3, and the grid of third NMOS tube M3 connects second The source electrode of NMOS tube M2, the source electrode ground connection of third NMOS tube M3；The drain electrode of 4th NMOS tube M4 connects power supply, the 4th NMOS tube M4's Grid connects the drain electrode of third NMOS tube M3, and the source electrode of the 4th NMOS tube M4 after the 4th resistance R4 by being grounded；The source of PMOS tube MP0 Pole connects power supply, and grid connects the output end of biasing circuit；The drain electrode of 5th NMOS tube M5 connects the drain electrode of PMOS tube MP0, and the 5th The grid of NMOS tube M5 connects the source electrode of the 4th NMOS tube M4, the source electrode ground connection of the 5th NMOS tube M5；The drain electrode of 6th NMOS tube M6 Power supply is connect, the grid of the 6th NMOS tube M6 connects the drain electrode of PMOS tube MP0, and the source electrode of the 6th NMOS tube M6 passes through after the 6th resistance R6 Ground connection；The grid of 5th NMOS tube M5 is followed by the connection of the 6th NMOS tube M6 source electrode and the 6th resistance R6 by the 9th resistance RF1 Point；The grid of first NMOS tube M1 pass sequentially through the tenth resistance RF2 and eleventh resistor RF3 be followed by the 6th NMOS tube M6 source electrode with The tie point of 6th resistance R6；First capacitor CF1 is in parallel with eleventh resistor RF3；9th resistance RF1, the 6th source NMOS tube M6 Pole, the 6th resistance R6, first capacitor CF1 and eleventh resistor RF3 tie point be the output end of prime trans-impedance amplifier；It is described Rear class voltage amplifier is by the 7th resistance R7, the 8th resistance R8, third capacitor CBP, the second capacitor CF2 and operational amplifier structure At；The output end of the positive input termination prime trans-impedance amplifier of operational amplifier, operational amplifier negative input end pass sequentially through the It is grounded after seven resistance R7 and third capacitor CBP, the output end of operational amplifier is the output end of rear class voltage amplifier；8th electricity The tie point of termination an operational amplifier negative input end and the 7th resistance R7 of R8 is hindered, another termination operation of the 8th resistance R8 is put The power end of big device；Second capacitor CF2 and the 8th resistance R8 are in parallel.
Beneficial effects of the present invention are that broadband micro-current sensing circuit of the invention is divided into front and back stages, and prime is low defeated The trans-impedance amplifier for entering impedance realizes the main transimpedance gain of circuit under sufficiently wide bandwidth；Rear class is voltage gain stages, is Circuit provides certain gain and increases circuit drives ability, tens megahertzs or more of bandwidth may be implemented and more than 106Amount The transimpedance gain of grade.
Detailed description of the invention
Fig. 1 is that micro-current proposed by the invention detects electric current frame；
Fig. 2 is trans-impedance amplifier electrical block diagram proposed by the invention；
Fig. 3 is mentioned rear class voltage amplifier circuit structural schematic diagram by the present invention.
Specific embodiment
With reference to the accompanying drawing, the technical schemes of the invention are described in detail:
For trans-impedance amplifier, as shown in Figure 2, it is contemplated that output signal always more than quiescent point,
In order to increase the output signal amplitude of oscillation, quiescent point is arranged low as far as possible.In order to increase the matching of circuit, Joined inside trans-impedance amplifier by the identical common source common drain stage of three parameters, is fed back so that three common sources leak static point altogether Keeping identical, i.e., the drain electrode of M1, grid, source voltage are equal with the drain electrode of M3 and M5, grid, source voltage respectively, M1, M3, The leakage current of M5 is identical；The drain electrode of M2, grid, source voltage are equal respectively at the drain electrode of M4 and M6, grid, source voltage, M2, The leakage current of M4, M6 are identical.Therefore, the present invention illustrates electricity herein only in a manner of analyzing the common source common drain stage that M1 and M2 are constituted Road quiescent point.By Vgs1=Vgs3, there is the M1 tube current to beM2 pipe is
It willWithIt substitutes into above-mentioned two formula, can be obtained
Static work can be guaranteed by resistance value and transistor parameter that R1 and R2 is arranged it can be seen from the two expression formulas Make point to stablize, M1 pipe and the work of M2 pipe are in saturation region.Place of the present invention sets the static work of each transistor by resistance R1~R6 Make a little, equally can also determine integrated circuit work using circuit field general current source or current mirror as bias current Make a little.
Since circuit transimpedance gain is especially big, there is the relationship to condition each other in gain and bandwidth, so that can not be by defeated Enter output end and bridge one big resistance to be directly realized by big transimpedance gain, therefore the circuit that designs of the present invention is divided into two-stage, first Grade is trans-impedance amplifier, and the second level is voltage amplifier.Prime trans-impedance amplifier transimpedance gain as shown in Figure 2 are as follows:
AR1=RF2+RF3
Rear class voltage gain shown in Fig. 3 are as follows:
AR2=1+R8/R7
Total transimpedance gain are as follows:
AR=AR1·AR2=(RF2+RF3)·(1+R8/R7)
Bandwidth and stability analysis
The input stage of current detection circuit connects photoelectric tube, and there are parasitic capacitances for usual photoelectric tube, leads to photoelectric conversion circuit High-gain and high bandwidth are not can be implemented simultaneously.This problem is even more serious in the case where large photosensistive surface photoelectric tube is applied.For For the application that high-gain requires, the resistance that first order trans-impedance amplifier bridges between outputting and inputting is needed using very big resistance Value, thus the node IIN that photoelectric tube is connected, the i.e. grid of M1 be first order circuit feedback loop dominant pole, frequency by The impedance of photoelectric tube parasitic capacitance C_pd and the bridging of trans-impedance amplifier input/output terminal determines.Then trans-impedance amplifier loop gain Are as follows:
LG=gm1gm3(R1//rM1)(R3//rM3)gm4RF1
Wherein gmx and rMx is respectively small-signal transconductance and the output resistance of the transistor marked as MX.Dominant pole are as follows:
Assuming that there is only the poles of input one in trans-impedance amplifier feedback control loop, then according to feedback principle it is found that feedback The unit gain of loop and the closed loop -3db bandwidth of trans-impedance amplifier depend on photoelectric tube parasitic capacitance C_pd and input node IIN Equivalent input impedance Z_IIN is determined.
So input impedance are as follows:
Closed-loop bandwidth are as follows:
By above-mentioned analysis it is found that the gain of trans-impedance amplifier and the resistance RF=RF2+ being connected across between outputting and inputting The resistance value of RF3 is related, and the bandwidth of amplifier is in the case where photoelectric tube parasitic capacitance determines, with gain around feedback at just Than being inversely proportional with feedback resistance RF.Therefore, there are restricting relations between the gain and bandwidth of first order trans-impedance amplifier.And this Restricting relation can be overcome by increasing the gain of amplifier feed-back loop.But the requirement of high-gain would generally bring additional low The influence of frequency pole, so that the stability especially under high frequency proposes challenge to the stability of feedback control loop.
There is pole at output at different levels in the present invention.Common drain stage is since output impedance is smaller, corresponding pole frequency Higher, the influence to feedback control loop can be ignored.And every level-one common-source stage for gain requirement the considerations of, can introduce to loop The pole having an impact, so that limiting amplifier realizes broader bandwidth.The present invention is led between the grid of M5 and the source electrode of M6 Resistance RF1 is crossed, building additional feedback loop is widened to further raise the pole location of amplifier in feedback control loop across resistance Amplifier overall feedback loop bandwidth.Simultaneously as introduce internal feedback resistance RF1, the impedance at output node OUT0 by into One step reduces.The pole for making OUT0 is pushed to higher frequency position by this, while also increasing the driving capability of trans-impedance amplifier, Prime trans-impedance amplifier bring is influenced after reducing rear class cascade.
In traditional trans-impedance amplifier, compensating electric capacity is connected across between input and output, although loop stability can be improved, extension Loop bandwidth, but the rise time of output signal can not be reduced, because output signal building up transient contains a large amount of high-frequency signals, Circuit equivalent will be reduced across resistance under this radio-frequency component, i.e., transimpedance gain is also reduced.In the trans-impedance amplifier that the present invention is previously mentioned, It is divided into RF2 and RF3 two parts across resistance, compensating electric capacity CF1 is in parallel with RF3.Total transimpedance gain are as follows:
By adjusting the value of RF2, RF3 and CF1, micro current signal input terminal IIN can be made to trans-impedance amplifier output end There are a high-speed channels by OUT0, while under signal rising edge radio-frequency component, guarantee that transimpedance gain AR1 is sufficiently large, therefore energy Accelerate the output signal rate of climb.

Claims (1)

1.一种微电流检测电路，包括光电二极管、前级跨阻放大器、后级电压放大器和偏置电路；其特征在于，所述前级跨阻放大器由第一电阻R1、第二电阻R2、第三电阻R3、第四电阻R4、第六电阻R6、第九电阻RF1、第十电阻RF2、第十一电阻RF3、第一电容CF1、第一NMOS管M1、第二NMOS管M2、第三NMOS管M3、第四NMOS管M4、第五NMOS管M5、第六NMOS管M6和PMOS管MP0构成；第一NMOS管M1的栅极接光电二极管的负极，光电二极管的正极接地，第一NMOS管M1的漏极通过第一电阻R1后接电源，第一NMOS管M1的源极接地；第二NMOS管M2的栅极接第一NMOS管M1的漏极，第二NMOS管M2的漏极接电源，第二NMOS管M2的源极通过第二电阻R2后接地；第三NMOS管M3的漏极通过第三电阻R3后接电源，第三NMOS管M3的栅极接第二NMOS管M2的源极，第三NMOS管M3的源极接地；第四NMOS管M4的漏极接电源，第四NMOS管M4的栅极接第三NMOS管M3的漏极，第四NMOS管M4的源极通过第四电阻R4后接地；PMOS管MP0的源极接电源，其栅极接偏置电路的输出端；第五NMOS管M5的漏极接PMOS管MP0的漏极，第五NMOS管M5的栅极接第四NMOS管M4的源极，第五NMOS管M5的源极接地；第六NMOS管M6的漏极接电源，第六NMOS管M6的栅极接PMOS管MP0的漏极，第六NMOS管M6的源极通过第六电阻R6后接地；第五NMOS管M5的栅极通过第九电阻RF1后接第六NMOS管M6源极与第六电阻R6的连接点；第一NMOS管M1的栅极依次通过第十电阻RF2和第十一电阻RF3后接第六NMOS管M6源极与第六电阻R6的连接点；第一电容CF1与第十一电阻RF3并联；第九电阻RF1、第六NMOS管M6源极、第六电阻R6、第一电容CF1和第十一电阻RF3的连接点为前级跨阻放大器的输出端；所述后级电压放大器由第七电阻R7、第八电阻R8、第三电容CBP、第二电容CF2和运算放大器构成；运算放大器的正输入端接前级跨阻放大器的输出端，运算放大器负输入端依次通过第七电阻R7和第三电容CBP后接地，运算放大器的输出端为后级电压放大器的输出端；第八电阻R8的一端接运算放大器负输入端与第七电阻R7的连接点，第八电阻R8的另一端接运算放大器的电源端；第二电容CF2和第八电阻R8并联。1. a micro-current detection circuit, comprising a photodiode, a front-stage transimpedance amplifier, a rear-stage voltage amplifier and a bias circuit; it is characterized in that, the front-stage transimpedance amplifier is composed of a first resistance R1, a second resistance R2, The third resistor R3, the fourth resistor R4, the sixth resistor R6, the ninth resistor RF1, the tenth resistor RF2, the eleventh resistor RF3, the first capacitor CF1, the first NMOS transistor M1, the second NMOS transistor M2, the third The NMOS transistor M3, the fourth NMOS transistor M4, the fifth NMOS transistor M5, the sixth NMOS transistor M6 and the PMOS transistor MP0 are formed; the gate of the first NMOS transistor M1 is connected to the cathode of the photodiode, the anode of the photodiode is grounded, and the first NMOS transistor M1 is connected to the cathode of the photodiode. The drain of the transistor M1 is connected to the power supply through the first resistor R1, the source of the first NMOS transistor M1 is grounded; the gate of the second NMOS transistor M2 is connected to the drain of the first NMOS transistor M1, and the drain of the second NMOS transistor M2 Connected to the power supply, the source of the second NMOS transistor M2 is grounded through the second resistor R2; the drain of the third NMOS transistor M3 is connected to the power supply through the third resistor R3, and the gate of the third NMOS transistor M3 is connected to the second NMOS transistor M2 The source of the third NMOS transistor M3 is grounded; the drain of the fourth NMOS transistor M4 is connected to the power supply, the gate of the fourth NMOS transistor M4 is connected to the drain of the third NMOS transistor M3, and the source of the fourth NMOS transistor M4 The pole is grounded after passing through the fourth resistor R4; the source of the PMOS tube MP0 is connected to the power supply, and its gate is connected to the output end of the bias circuit; the drain of the fifth NMOS tube M5 is connected to the drain of the PMOS tube MP0, and the fifth NMOS tube M5 The gate of the sixth NMOS transistor M4 is connected to the source of the fourth NMOS transistor M4, the source of the fifth NMOS transistor M5 is grounded; the drain of the sixth NMOS transistor M6 is connected to the power supply, and the gate of the sixth NMOS transistor M6 is connected to the drain of the PMOS transistor MP0. The source of the sixth NMOS transistor M6 is grounded through the sixth resistor R6; the gate of the fifth NMOS transistor M5 is connected to the connection point between the source of the sixth NMOS transistor M6 and the sixth resistor R6 through the ninth resistor RF1; the first NMOS The gate of the tube M1 passes through the tenth resistor RF2 and the eleventh resistor RF3 in turn, followed by the connection point between the source of the sixth NMOS tube M6 and the sixth resistor R6; the first capacitor CF1 is connected in parallel with the eleventh resistor RF3; the ninth resistor The connection point of RF1, the source of the sixth NMOS transistor M6, the sixth resistor R6, the first capacitor CF1 and the eleventh resistor RF3 is the output end of the front-stage transimpedance amplifier; the latter-stage voltage amplifier is composed of the seventh resistor R7, The eighth resistor R8, the third capacitor CBP, the second capacitor CF2 and the operational amplifier are formed; the positive input terminal of the operational amplifier is connected to the output terminal of the previous stage transimpedance amplifier, and the negative input terminal of the operational amplifier sequentially passes through the seventh resistor R7 and the third capacitor After CBP is grounded, the output end of the operational amplifier is the output end of the subsequent stage voltage amplifier; one end of the eighth resistor R8 is connected to the connection point between the negative input end of the operational amplifier and the seventh resistor R7, and the other end of the eighth resistor R8 is connected to the Power supply terminal; the second capacitor CF2 and the eighth resistor R8 are connected in parallel .
CN201610554311.1A 2016-07-14 2016-07-14 A kind of micro-current sensing circuit Expired - Fee Related CN106249023B (en)

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CN109474244A (en) * 2018-10-19 2019-03-15 天津大学 A Broadband High Gain RGC Transimpedance Amplifier with Gate Voltage Feedback
CN110086435B (en) * 2019-05-10 2023-07-04 南京牛芯微电子有限公司 Transimpedance amplifier
CN114966151B (en) * 2022-05-27 2025-06-20 思诺威科技(无锡)有限公司 A transimpedance circuit and a micro-current excitation and detection circuit using the same

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