CN106249023B - A kind of micro-current sensing circuit - Google Patents
A kind of micro-current sensing circuit Download PDFInfo
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- CN106249023B CN106249023B CN201610554311.1A CN201610554311A CN106249023B CN 106249023 B CN106249023 B CN 106249023B CN 201610554311 A CN201610554311 A CN 201610554311A CN 106249023 B CN106249023 B CN 106249023B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
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Abstract
The invention belongs to electronic circuit technology fields, are related to a kind of micro-current sensing circuit.Broadband micro-current sensing circuit of the invention is divided into front and back stages, and prime is the trans-impedance amplifier of low input impedance, and the main transimpedance gain of circuit is realized under sufficiently wide bandwidth；Rear class is voltage gain stages, provides certain gain for circuit and increases circuit drives ability.The present invention may be implemented tens megahertzs or more of bandwidth and more than 106The transimpedance gain of magnitude.
Description
Technical field
The invention belongs to electronic circuit technology fields, are related to a kind of micro-current sensing circuit.
Background technique
In high speed optoelectronic integrated circuit (OEIC), photodiode receives optical signal and generates faint current signal,
Current signal is converted to voltage signal by trans-impedance amplifier.Speed and noise-induced of the prime micro-current sensing circuit to whole system
There can be vital influence.Its core is to convert voltage letter for the weak current that photoelectric tube generates by trans-impedance amplifier
Number.Since the electric current that photoelectric tube generates is smaller, it is desirable that prime current detection circuit has enough gains；And photoelectric tube is parasitic
Capacitor is big, under high-speed applications, it is desirable that circuit has enough bandwidth, therefore current detection circuit needs have in higher frequency band
There is sufficiently small input impedance.Especially in special applications, light intensity is smaller, and photoelectric tube area is bigger, the bigger feelings of parasitic capacitance
Condition will make circuit have biggish output voltage swing and conversion speed, and with greater need for high-gain, the micro-current of low input impedance detects electricity
Road.
In traditional micro-current sensing circuit system, since photoelectric tube area is smaller, photoelectric tube parasitic capacitance is small.Turn simultaneously
The voltage signal magnitude exported after changing is also smaller, thus gain to current detection circuit and input impedance require it is small.It is existing
Micro-current sensing circuit cannot be considered in terms of the requirement of high-gain and high speed, can not be suitable for the application that photosurface is big, optical responsivity is low.
Summary of the invention
It is to be solved by this invention, it not can be implemented simultaneously high-gain and height aiming at above-mentioned existing micro-current sensing circuit
The limitation of bandwidth, not wide enough the problem of bandwidth especially in the big situation of photoelectric tube parasitic capacitance.Propose a kind of new broadband
High-gain micro-current sensing circuit.
The technical scheme is that a kind of micro-current sensing circuit, including photodiode, prime trans-impedance amplifier,
Rear class voltage amplifier and biasing circuit；The prime trans-impedance amplifier is by first resistor R1, second resistance R2,3rd resistor
R3, the 4th resistance R4, the 6th resistance R6, the 9th resistance RF1, the tenth resistance RF2, eleventh resistor RF3, first capacitor CF1,
One NMOS tube M1, the second NMOS tube M2, third NMOS tube M3, the 4th NMOS tube M4, the 5th NMOS tube M5, the 6th NMOS tube M6 and
PMOS tube MP0 is constituted；The grid of first NMOS tube M1 connects the cathode of photodiode, the plus earth of photodiode, and first
The drain electrode of NMOS tube M1 is followed by power supply, the source electrode ground connection of the first NMOS tube M1 by first resistor R1；The grid of second NMOS tube M2
Pole connects the drain electrode of the first NMOS tube M1, and the drain electrode of the second NMOS tube M2 connects power supply, and the source electrode of the second NMOS tube M2 passes through the second electricity
It is grounded after resistance R2；The drain electrode of third NMOS tube M3 is followed by power supply by 3rd resistor R3, and the grid of third NMOS tube M3 connects second
The source electrode of NMOS tube M2, the source electrode ground connection of third NMOS tube M3；The drain electrode of 4th NMOS tube M4 connects power supply, the 4th NMOS tube M4's
Grid connects the drain electrode of third NMOS tube M3, and the source electrode of the 4th NMOS tube M4 after the 4th resistance R4 by being grounded；The source of PMOS tube MP0
Pole connects power supply, and grid connects the output end of biasing circuit；The drain electrode of 5th NMOS tube M5 connects the drain electrode of PMOS tube MP0, and the 5th
The grid of NMOS tube M5 connects the source electrode of the 4th NMOS tube M4, the source electrode ground connection of the 5th NMOS tube M5；The drain electrode of 6th NMOS tube M6
Power supply is connect, the grid of the 6th NMOS tube M6 connects the drain electrode of PMOS tube MP0, and the source electrode of the 6th NMOS tube M6 passes through after the 6th resistance R6
Ground connection；The grid of 5th NMOS tube M5 is followed by the connection of the 6th NMOS tube M6 source electrode and the 6th resistance R6 by the 9th resistance RF1
Point；The grid of first NMOS tube M1 pass sequentially through the tenth resistance RF2 and eleventh resistor RF3 be followed by the 6th NMOS tube M6 source electrode with
The tie point of 6th resistance R6；First capacitor CF1 is in parallel with eleventh resistor RF3；9th resistance RF1, the 6th source NMOS tube M6
Pole, the 6th resistance R6, first capacitor CF1 and eleventh resistor RF3 tie point be the output end of prime trans-impedance amplifier；It is described
Rear class voltage amplifier is by the 7th resistance R7, the 8th resistance R8, third capacitor CBP, the second capacitor CF2 and operational amplifier structure
At；The output end of the positive input termination prime trans-impedance amplifier of operational amplifier, operational amplifier negative input end pass sequentially through the
It is grounded after seven resistance R7 and third capacitor CBP, the output end of operational amplifier is the output end of rear class voltage amplifier；8th electricity
The tie point of termination an operational amplifier negative input end and the 7th resistance R7 of R8 is hindered, another termination operation of the 8th resistance R8 is put
The power end of big device；Second capacitor CF2 and the 8th resistance R8 are in parallel.
Beneficial effects of the present invention are that broadband micro-current sensing circuit of the invention is divided into front and back stages, and prime is low defeated
The trans-impedance amplifier for entering impedance realizes the main transimpedance gain of circuit under sufficiently wide bandwidth；Rear class is voltage gain stages, is
Circuit provides certain gain and increases circuit drives ability, tens megahertzs or more of bandwidth may be implemented and more than 106Amount
The transimpedance gain of grade.
Detailed description of the invention
Fig. 1 is that micro-current proposed by the invention detects electric current frame；
Fig. 2 is trans-impedance amplifier electrical block diagram proposed by the invention；
Fig. 3 is mentioned rear class voltage amplifier circuit structural schematic diagram by the present invention.
Specific embodiment
With reference to the accompanying drawing, the technical schemes of the invention are described in detail:
For trans-impedance amplifier, as shown in Figure 2, it is contemplated that output signal always more than quiescent point,
In order to increase the output signal amplitude of oscillation, quiescent point is arranged low as far as possible.In order to increase the matching of circuit,
Joined inside trans-impedance amplifier by the identical common source common drain stage of three parameters, is fed back so that three common sources leak static point altogether
Keeping identical, i.e., the drain electrode of M1, grid, source voltage are equal with the drain electrode of M3 and M5, grid, source voltage respectively, M1, M3,
The leakage current of M5 is identical；The drain electrode of M2, grid, source voltage are equal respectively at the drain electrode of M4 and M6, grid, source voltage, M2,
The leakage current of M4, M6 are identical.Therefore, the present invention illustrates electricity herein only in a manner of analyzing the common source common drain stage that M1 and M2 are constituted
Road quiescent point.By Vgs1=Vgs3, there is the M1 tube current to beM2 pipe is
It willWithIt substitutes into above-mentioned two formula, can be obtained
Static work can be guaranteed by resistance value and transistor parameter that R1 and R2 is arranged it can be seen from the two expression formulas
Make point to stablize, M1 pipe and the work of M2 pipe are in saturation region.Place of the present invention sets the static work of each transistor by resistance R1~R6
Make a little, equally can also determine integrated circuit work using circuit field general current source or current mirror as bias current
Make a little.
Since circuit transimpedance gain is especially big, there is the relationship to condition each other in gain and bandwidth, so that can not be by defeated
Enter output end and bridge one big resistance to be directly realized by big transimpedance gain, therefore the circuit that designs of the present invention is divided into two-stage, first
Grade is trans-impedance amplifier, and the second level is voltage amplifier.Prime trans-impedance amplifier transimpedance gain as shown in Figure 2 are as follows:
AR1=RF2+RF3
Rear class voltage gain shown in Fig. 3 are as follows:
AR2=1+R8/R7
Total transimpedance gain are as follows:
AR=AR1·AR2=(RF2+RF3)·(1+R8/R7)
Bandwidth and stability analysis
The input stage of current detection circuit connects photoelectric tube, and there are parasitic capacitances for usual photoelectric tube, leads to photoelectric conversion circuit
High-gain and high bandwidth are not can be implemented simultaneously.This problem is even more serious in the case where large photosensistive surface photoelectric tube is applied.For
For the application that high-gain requires, the resistance that first order trans-impedance amplifier bridges between outputting and inputting is needed using very big resistance
Value, thus the node IIN that photoelectric tube is connected, the i.e. grid of M1 be first order circuit feedback loop dominant pole, frequency by
The impedance of photoelectric tube parasitic capacitance C_pd and the bridging of trans-impedance amplifier input/output terminal determines.Then trans-impedance amplifier loop gain
Are as follows:
LG=gm1gm3(R1//rM1)(R3//rM3)gm4RF1
Wherein gmx and rMx is respectively small-signal transconductance and the output resistance of the transistor marked as MX.Dominant pole are as follows:
Assuming that there is only the poles of input one in trans-impedance amplifier feedback control loop, then according to feedback principle it is found that feedback
The unit gain of loop and the closed loop -3db bandwidth of trans-impedance amplifier depend on photoelectric tube parasitic capacitance C_pd and input node IIN
Equivalent input impedance Z_IIN is determined.
So input impedance are as follows:
Closed-loop bandwidth are as follows:
By above-mentioned analysis it is found that the gain of trans-impedance amplifier and the resistance RF=RF2+ being connected across between outputting and inputting
The resistance value of RF3 is related, and the bandwidth of amplifier is in the case where photoelectric tube parasitic capacitance determines, with gain around feedback at just
Than being inversely proportional with feedback resistance RF.Therefore, there are restricting relations between the gain and bandwidth of first order trans-impedance amplifier.And this
Restricting relation can be overcome by increasing the gain of amplifier feed-back loop.But the requirement of high-gain would generally bring additional low
The influence of frequency pole, so that the stability especially under high frequency proposes challenge to the stability of feedback control loop.
There is pole at output at different levels in the present invention.Common drain stage is since output impedance is smaller, corresponding pole frequency
Higher, the influence to feedback control loop can be ignored.And every level-one common-source stage for gain requirement the considerations of, can introduce to loop
The pole having an impact, so that limiting amplifier realizes broader bandwidth.The present invention is led between the grid of M5 and the source electrode of M6
Resistance RF1 is crossed, building additional feedback loop is widened to further raise the pole location of amplifier in feedback control loop across resistance
Amplifier overall feedback loop bandwidth.Simultaneously as introduce internal feedback resistance RF1, the impedance at output node OUT0 by into
One step reduces.The pole for making OUT0 is pushed to higher frequency position by this, while also increasing the driving capability of trans-impedance amplifier,
Prime trans-impedance amplifier bring is influenced after reducing rear class cascade.
In traditional trans-impedance amplifier, compensating electric capacity is connected across between input and output, although loop stability can be improved, extension
Loop bandwidth, but the rise time of output signal can not be reduced, because output signal building up transient contains a large amount of high-frequency signals,
Circuit equivalent will be reduced across resistance under this radio-frequency component, i.e., transimpedance gain is also reduced.In the trans-impedance amplifier that the present invention is previously mentioned,
It is divided into RF2 and RF3 two parts across resistance, compensating electric capacity CF1 is in parallel with RF3.Total transimpedance gain are as follows:
By adjusting the value of RF2, RF3 and CF1, micro current signal input terminal IIN can be made to trans-impedance amplifier output end
There are a high-speed channels by OUT0, while under signal rising edge radio-frequency component, guarantee that transimpedance gain AR1 is sufficiently large, therefore energy
Accelerate the output signal rate of climb.
Claims (1)
1. a kind of micro-current sensing circuit, including photodiode, prime trans-impedance amplifier, rear class voltage amplifier and biased electrical
Road；It is characterized in that, the prime trans-impedance amplifier is by first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance
R4, the 6th resistance R6, the 9th resistance RF1, the tenth resistance RF2, eleventh resistor RF3, first capacitor CF1, the first NMOS tube M1,
Second NMOS tube M2, third NMOS tube M3, the 4th NMOS tube M4, the 5th NMOS tube M5, the 6th NMOS tube M6 and PMOS tube MP0 structure
At；The grid of first NMOS tube M1 connects the cathode of photodiode, the plus earth of photodiode, the leakage of the first NMOS tube M1
Pole is followed by power supply, the source electrode ground connection of the first NMOS tube M1 by first resistor R1；The grid of second NMOS tube M2 meets the first NMOS
The drain electrode of pipe M1, the drain electrode of the second NMOS tube M2 connect power supply, and the source electrode of the second NMOS tube M2 after second resistance R2 by being grounded；The
The drain electrode of three NMOS tube M3 is followed by power supply by 3rd resistor R3, and the grid of third NMOS tube M3 connects the source of the second NMOS tube M2
Pole, the source electrode ground connection of third NMOS tube M3；The drain electrode of 4th NMOS tube M4 connects power supply, and the grid of the 4th NMOS tube M4 connects third
The drain electrode of NMOS tube M3, the source electrode of the 4th NMOS tube M4 after the 4th resistance R4 by being grounded；The source electrode of PMOS tube MP0 connects power supply,
Its grid connects the output end of biasing circuit；The drain electrode of 5th NMOS tube M5 connects the drain electrode of PMOS tube MP0, the grid of the 5th NMOS tube M5
Pole connects the source electrode of the 4th NMOS tube M4, the source electrode ground connection of the 5th NMOS tube M5；The drain electrode of 6th NMOS tube M6 connects power supply, and the 6th
The grid of NMOS tube M6 connects the drain electrode of PMOS tube MP0, and the source electrode of the 6th NMOS tube M6 after the 6th resistance R6 by being grounded；5th
The grid of NMOS tube M5 is followed by the tie point of the 6th NMOS tube M6 source electrode and the 6th resistance R6 by the 9th resistance RF1；First
The grid of NMOS tube M1 passes sequentially through the tenth resistance RF2 and eleventh resistor RF3 is followed by the 6th NMOS tube M6 source electrode and the 6th electricity
Hinder the tie point of R6；First capacitor CF1 is in parallel with eleventh resistor RF3；9th resistance RF1, the 6th NMOS tube M6 source electrode, the 6th
The tie point of resistance R6, first capacitor CF1 and eleventh resistor RF3 are the output end of prime trans-impedance amplifier；The rear class electricity
Pressure amplifier is made of the 7th resistance R7, the 8th resistance R8, third capacitor CBP, the second capacitor CF2 and operational amplifier；Operation
The output end of the positive input termination prime trans-impedance amplifier of amplifier, operational amplifier negative input end pass sequentially through the 7th resistance R7
It is grounded with after third capacitor CBP, the output end of operational amplifier is the output end of rear class voltage amplifier；The one of 8th resistance R8
Terminate the tie point of operational amplifier negative input end and the 7th resistance R7, the electricity of another termination operational amplifier of the 8th resistance R8
Source；Second capacitor CF2 and the 8th resistance R8 are in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610554311.1A CN106249023B (en) | 2016-07-14 | 2016-07-14 | A kind of micro-current sensing circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610554311.1A CN106249023B (en) | 2016-07-14 | 2016-07-14 | A kind of micro-current sensing circuit |
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| CN106249023A CN106249023A (en) | 2016-12-21 |
| CN106249023B true CN106249023B (en) | 2019-03-29 |
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| CN201610554311.1A Expired - Fee Related CN106249023B (en) | 2016-07-14 | 2016-07-14 | A kind of micro-current sensing circuit |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109474244A (en) * | 2018-10-19 | 2019-03-15 | 天津大学 | A kind of wide-band high gain RGC type trans-impedance amplifier with grid voltage feedback |
| CN110086435B (en) * | 2019-05-10 | 2023-07-04 | 南京牛芯微电子有限公司 | Transimpedance amplifier |
| CN114966151A (en) * | 2022-05-27 | 2022-08-30 | 思诺威科技(无锡)有限公司 | Transimpedance stage circuit and micro-current excitation and detection circuit applying same |
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| US20160109486A1 (en) * | 2014-10-17 | 2016-04-21 | Hioki Denki Kabushiki Kaisha | Voltage detecting apparatus |
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2016
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| US20110248702A1 (en) * | 2010-04-07 | 2011-10-13 | Tomohiro Kume | Current detection circuit including electrostatic capacitor and rectifying element for increasing gate voltage of protecting mosfet |
| CN102918766A (en) * | 2010-06-03 | 2013-02-06 | 住友电气工业株式会社 | Transimpedance amplifier, integrated circuit, and system |
| CN103973246A (en) * | 2014-04-04 | 2014-08-06 | 嘉兴禾润电子科技有限公司 | Low-noise transimpedance amplifier for optical receiver |
| CN103900686A (en) * | 2014-04-15 | 2014-07-02 | 电子科技大学 | Pre-stage amplifying circuit for high-speed photoelectric detector |
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| US20160109486A1 (en) * | 2014-10-17 | 2016-04-21 | Hioki Denki Kabushiki Kaisha | Voltage detecting apparatus |
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