CN109474244A - A kind of wide-band high gain RGC type trans-impedance amplifier with grid voltage feedback - Google Patents
A kind of wide-band high gain RGC type trans-impedance amplifier with grid voltage feedback Download PDFInfo
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- CN109474244A CN109474244A CN201811222149.9A CN201811222149A CN109474244A CN 109474244 A CN109474244 A CN 109474244A CN 201811222149 A CN201811222149 A CN 201811222149A CN 109474244 A CN109474244 A CN 109474244A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
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Abstract
A kind of wide-band high gain RGC type trans-impedance amplifier with grid voltage feedback, the grid of the first~the second metal-oxide-semiconductor connects input current, the grid of drain electrode the 4th metal-oxide-semiconductor of connection of the first~the second metal-oxide-semiconductor, the source electrode of first metal-oxide-semiconductor connects power supply, the source electrode of second metal-oxide-semiconductor is grounded, the source electrode and input current of 4th metal-oxide-semiconductor are grounded by first resistor, the drain electrode of third metal-oxide-semiconductor, the drain electrode of 4th metal-oxide-semiconductor and the grid of the 5th metal-oxide-semiconductor pass through the 5th resistance to voltage output end, the grounded-grid of third metal-oxide-semiconductor, source electrode connects power vd D, the source electrode of 5th~the 7th metal-oxide-semiconductor is grounded, the grid of drain electrode the 6th metal-oxide-semiconductor of connection of 5th metal-oxide-semiconductor, drain electrode also connects power vd D by second resistance, the grid of drain electrode the 7th metal-oxide-semiconductor of connection of 6th metal-oxide-semiconductor, drain electrode Power vd D is also connected by 3rd resistor, the drain electrode of the 7th metal-oxide-semiconductor constitutes voltage output end VOUT, and drain electrode also connects power vd D by the 4th resistance.
Description
Technical Field
The invention relates to a transimpedance amplifier. In particular to a wide-band high-gain RGC type transimpedance amplifier with grid voltage feedback.
Background
With the rapid development of science and technology, the information era has gradually evolved into a big data era, and as the information transmission amount and the transmission rate have increased in an avalanche manner, the radio spectrum resources have been unable to meet the demands of people. The visible light communication technology utilizes visible light spectrum, and can effectively solve the problem of the current radio spectrum resource exhaustion, so that the visible light communication technology becomes one of important research directions of next generation radio communication. The optical receiver is an important component of a visible light communication system, and functions to convert an optical signal into an electrical signal, which determines parameters such as an information transmission rate, signal quality, and an error rate of the entire system. The transimpedance amplifier (TIA) can convert and amplify a weak current signal obtained by sensing an optical signal by the Photoelectric Detector (PD) into a large-amplitude voltage signal with a certain signal-to-noise ratio, so that the TIA is widely applied to a front-end circuit of an optical fiber communication receiver and is directly connected with the photoelectric detector.
In practical visible light communication applications, in order to extend the communication distance, the area of the photodetector is generally increased to increase the received signal strength, which causes the output capacitance of the photodetector to be too large, and the bandwidth of the receiver to be severely attenuated. In order to reduce the influence of the output capacitance on the receiving system, researchers have improved the structure of the trans-impedance amplifier. For example, zhenghaochao et al designs a transimpedance amplifier with a passive matching network, the bandwidth of which can reach 8GHz and the gain of which is 53dB, introduces an inductance matching network at the input stage to reduce the attenuation of the output resistance of the front stage to the bandwidth of the transimpedance amplifier, and improves the bandwidth by adjusting the circuit parameters. The structure introduces passive inductance, greatly increases the chip area and is not beneficial to the development of receiver miniaturization. Yunfie et al designed a high-gain transimpedance amplifier based on the SMIC0.35um standard CMOS process, with a gain of 110.2dB and a bandwidth of 46.7MHz, and the circuit thereof consists of two stages of amplification circuits: the first stage adopts a double RGC structure with parallel current mirror units, so that the parasitic capacitance of the photodiode is isolated, and the working bandwidth is improved; the second-stage amplification circuit is composed of 3 cascaded inverting amplifiers, is a main gain stage of the trans-impedance amplifier, takes a emitter follower as output and provides enough voltage swing for a subsequent system. The combination of the RGC structure and the current mirror is equivalent to a current amplifier, and has an amplification effect on the photo-generated current while reducing the input impedance. This structure emphasizes the gain of the circuit, but results in a smaller bandwidth. Because the visible light intensity is very weak, a large-area photodetector is still used for receiving in a communication system, and the large output capacitance caused by the photodetector is still the main reason for limiting a receiver.
Fig. 1 shows a conventional RGC structure, in which the input stage is a common gate formed by MOS transistors M8 and R7, the second stage uses a common source circuit formed by MOS transistors M9 and R8 as feedback, the input signal is the output current IPD of the photodetector, and the output signal is connected to the gate of the common gate transistor to provide bias and feedback. Therefore, the gain of the whole gain output stage is only the common grid, and the gain is affected. The input impedance of a conventional RGC structure is:
equation (1) shows that the input impedance of the RGC structure is reduced by 1+ g compared to the current mode structurembRdThis is exactly the effect produced by the common-source stage feedback circuit. Under the condition that the power consumption is almost unchanged, the input impedance is reduced, so that higher input capacitance isolation is provided, and the bandwidth is improved. Due to the large junction capacitance of the photodetectors used for visible light communications, the conventional RGC structure has a very limited increase in bandwidth.
Disclosure of Invention
The invention aims to solve the technical problem of providing a wide-band high-gain RGC (reduced-gain-capacitance) trans-impedance amplifier with gate voltage feedback, which can reduce input resistance, reduce the limitation of output capacitance of a photoelectric detector on the bandwidth of a receiver, improve gain and reduce the design difficulty of a subsequent circuit.
The technical scheme adopted by the invention is as follows: a wide-band high-gain RGC type transimpedance amplifier with gate voltage feedback comprises a first MOS tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube, and is characterized in that the first MOS tube and the third MOS tube are PMOS tubes, the second MOS tube to the seventh MOS tube are NMOS tubes, wherein the grid electrodes of the first MOS tube and the second MOS tube are connected with an input current IPD, the drain electrodes of the first MOS tube and the second MOS tube are connected with the grid electrode of the fourth MOS tube together, the source electrode of the first MOS tube is connected with a power supply VDD, the source electrode of the second MOS tube is grounded, the source electrode of the fourth MOS tube is grounded with the input current IPD through a first resistor together, the drain electrode of the third MOS tube, the drain electrode of the fourth MOS tube and the grid electrode of the fifth MOS tube are connected with a voltage output end through a fifth resistor together, the grid electrode of the third MOS tube is grounded, and the source electrode is connected with the power supply VDD, the source electrodes of the fifth MOS tube, the sixth MOS tube and the seventh MOS tube are grounded, the drain electrode of the fifth MOS tube is connected with the grid electrode of the sixth MOS tube, the drain electrode of the fifth MOS tube is connected with a power supply VDD through a second resistor, the drain electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube, the drain electrode of the sixth MOS tube is connected with the power supply VDD through a third resistor, the drain electrode of the seventh MOS tube forms a voltage output end VOUT, and the drain electrode of the seventh MOS tube is connected with the power supply VDD through a fourth resistor.
The wide-band high-gain RGC type trans-impedance amplifier with the gate voltage feedback reduces the input resistance, reduces the limitation of the output capacitance of the photoelectric detector on the bandwidth of a receiver, improves the gain and reduces the design difficulty of a subsequent circuit. The rear part circuit further improves the gain by using three groups of amplifiers and reduces the influence of noise. The invention has the following advantages:
1. the invention adds the first-stage grid voltage feedback, effectively reduces the input resistance, reduces the limitation of the preceding-stage capacitor to the bandwidth of the receiver, and improves the overall bandwidth of the receiver.
2. The first stage of the input end forms an inverter, and the input resistance can be reduced by adjusting the gain of the inverter, which is easier to realize than the traditional RGC structure, thereby achieving higher bandwidth.
3. The rear end of the trans-impedance amplifier is cascaded with the three-level common source amplifier, so that the defect that the gain of the traditional trans-impedance amplifier is not high is overcome.
In conclusion, the novel transimpedance amplifier circuit provided by the invention has a good application prospect in practical application.
Drawings
FIG. 1 is a schematic diagram of a conventional RGC circuit;
FIG. 2 is a schematic diagram of a modified RGC circuit;
FIG. 3 is a small signal equivalent circuit diagram of an improved RGC structure;
FIG. 4 is a schematic circuit diagram of a wide band high gain RGC type transimpedance amplifier with gate voltage feedback according to the present invention;
FIG. 5 is a graph showing simulation of the amplitude-frequency characteristics of the improved transimpedance amplifier;
figure 6 is a plot of the equivalent input noise current spectral density for the modified and conventional RGC transimpedance amplifiers.
Detailed Description
The following describes a wide-band high-gain RGC type transimpedance amplifier with gate voltage feedback according to the present invention in detail with reference to the embodiments and the accompanying drawings.
The wide-band high-gain RGC type trans-impedance amplifier with the gate voltage feedback improves the traditional RGC structure, adds the first-stage gate voltage feedback to reduce the input resistance, adds the feedback amplifier and makes up the defect of small gain of the traditional structure.
FIG. 2 shows an improved RGC structure of the present invention, which is composed of a first stage inverter and a second stage amplifier. Compared with the traditional RGC structure, the design adds a first-stage MOS tube M1 for feeding back the grid voltage of the MOS tube M4, so that the MOS tube M1 and the MOS tube M2 form a phase inverter, the input resistance is reduced by improving the gain of the phase inverter, the influence of the front-stage capacitance is reduced, and the higher bandwidth is realized. To further highlight the performance characteristics of the improved RGC structure, its small signal circuit model is analyzed below.
Figure 3 is a small signal equivalent circuit diagram of the improved RGC structure. Obtained by circuit analysis, its input impedance
Wherein,
Ainv＝(gm,n2+gm,p2)·rds,n2//rds,p2(3)
Ainvthe voltage gain of the inverter formed by the MOS transistor M1 and the MOS transistor M2 is obtained. From the formula (2), a is reducedinvThe input impedance can be reduced, so that the limitation of the output capacitance of the photoelectric detector on the bandwidth is reduced, and the bandwidth expansion is realized. The first pole and the second pole of the improved RGC structure are respectively as follows:
wherein,
Cin＝CPD+CESD+CPAD+Cgs2+(1+Ainv)Cgs1(6)
C'L＝CL+(1-1/Ainv)Cgs1(7)
rds,eq＝rds,M1//rds,M2(8)
as can be seen from equation (4), increasing the gain of the inverter can increase the frequency of the first pole, i.e., increase the bandwidth of the circuit. The gain of the inverter is improved by increasing the gate width of M1 and M2, which is easier to implement than the conventional RGC structure. The improved RGC structure not only reduces the input resistance, but also improves the bandwidth and the gain, and can better match with a subsequent circuit.
As shown in fig. 4, the wide-band high-gain RGC transimpedance amplifier with gate voltage feedback according to the present invention includes a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, a fifth MOS transistor M5, a sixth MOS transistor M6 and a seventh MOS transistor M7, where the first MOS transistor M1 and the third MOS transistor M3 are PMOS transistors, the second MOS transistor M2 to the seventh MOS transistor M7 are NMOS transistors, gates of the first MOS transistor M1 and the second MOS transistor M2 are connected to an input current IPD, drains of the first MOS transistor M1 and the second MOS transistor M2 are commonly connected to a gate of the fourth MOS transistor M4, a source of the first MOS transistor M1 is connected to a power supply VDD, a source of the second MOS transistor M2 is grounded, a source of the fourth MOS transistor M4 and the input current are commonly connected to the ground through a first resistor IPD R686 9, a drain of the fourth MOS transistor M828656 and a drain of the fifth MOS transistor M5, the gate of the third MOS transistor M3 is grounded, the source is connected to a power supply VDD, the sources of the fifth MOS transistor M5, the sixth MOS transistor M6 and the seventh MOS transistor M7 are grounded, the drain of the fifth MOS transistor M5 is connected to the gate of the sixth MOS transistor M6, the drain of the fifth MOS transistor M5 is further connected to the power supply VDD through a second resistor R2, the drain of the sixth MOS transistor M6 is connected to the gate of the seventh MOS transistor M7, the drain of the sixth MOS transistor M6 is further connected to the power supply VDD through a third resistor R3, the drain of the seventh MOS transistor M7 constitutes a voltage output terminal VOUT, and the drain of the seventh MOS transistor M7 is further connected to the power supply VDD through a fourth resistor R4.
In order to make up for the disadvantage of low gain of the conventional RGC structure, the invention adds a three-stage cascade common-source amplifier and a feedback resistor at the rear end of the RGC to improve the gain of the whole circuit, which may cause the problem of system stability and self-oscillation. The whole performance of the circuit is stable, and oscillation cannot be generated.
Based on a UMC 0.18 mu m CMOS process, the circuit structure is subjected to simulation optimization. Fig. 5 is an amplitude-frequency characteristic simulation of the improved transimpedance amplifier, and in order to highlight the improvement of the circuit performance, the amplitude-frequency characteristic simulation of the conventional RGC structure is also shown. As can be seen from the figure, the gain and the bandwidth of the traditional RGC structure are respectively 45dB and 4.7GHz, while the bandwidth of the amplifier with the novel structure can reach about 10GHz, the gain is about 65dB, and the performance is obviously improved.
Figure 6 is a plot of the equivalent input noise current spectral density for the modified and conventional RGC transimpedance amplifiers. It can be seen that the equivalent input noise current spectral density of the modified RGC transimpedance amplifier is slightly increased compared to the conventional structure. This is because many MOS transistors and resistors are added in the new structure, and these elements have non-rational factors such as flicker noise, etc., which inevitably deteriorate the sensitivity of the circuit, but the increase of the spectral density of the equivalent input noise current in the frequency range below 6G is not significant. The improved circuit has greatly improved performance compared with the traditional circuit as a whole because the improved gain can weaken the influence of noise on effective signals.
In summary, the invention designs a novel RGC trans-impedance amplifier, and the circuit consists of an improved RGC structure and a three-stage common source amplifier with feedback. Compared with the traditional RGC type amplifier, the performance of the designed trans-impedance amplifier is greatly improved, and high bandwidth and high gain are realized.
Claims (1)
1. The wide-band high-gain RGC type transimpedance amplifier with gate voltage feedback comprises a first MOS tube (M1), a second MOS tube (M2), a third MOS tube (M3), a fourth MOS tube (M4), a fifth MOS tube (M5), a sixth MOS tube (M6) and a seventh MOS tube (M7), and is characterized in that the first MOS tube (M1) and the third MOS tube (M3) are PMOS tubes, the second MOS tube (M2) -the seventh MOS tube (M7) are NMOS tubes, gates of the first MOS tube (M1) and the second MOS tube (M2) are connected with an input current IPD, drains of the first MOS tube (M1) and the second MOS tube (M2) are commonly connected with a gate of the fourth MOS tube (M4), a source of the first MOS tube (M1) is connected with a power supply, a source of the second MOS tube (M2) is grounded, a drain of the fourth MOS tube (M1) is commonly connected with a source resistor (M3) and a drain of the third MOS tube (M3) is grounded through a drain resistor (M4642), The drain of the fourth MOS transistor (M4) and the gate of the fifth MOS transistor (M5) are connected to a voltage output terminal VOUT through a fifth resistor (R5), the gate of the third MOS transistor (M3) is grounded, the source is connected to a power supply VDD, the sources of the fifth MOS transistor (M5), the sixth MOS transistor (M6) and the seventh MOS transistor (M7) are grounded, the drain of the fifth MOS transistor (M5) is connected to the gate of the sixth MOS transistor (M6), the drain of the fifth MOS transistor (M5) is further connected to the power supply VDD through a second resistor (R2), the drain of the sixth MOS transistor (M6) is connected to the gate of the seventh MOS transistor (M7), the drain of the sixth MOS transistor (M6) is further connected to the power supply VDD through a third resistor (R3), the drain of the seventh MOS transistor (M7) constitutes the voltage output terminal VOUT, and the drain of the seventh MOS transistor (M7) is further connected to the power supply VDD through the fourth resistor (R4).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112566433A (en) * | 2021-02-23 | 2021-03-26 | 坤元微电子(南京)有限公司 | Photoelectric amplification circuit |
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| RU2426220C1 (en) * | 2010-01-11 | 2011-08-10 | Государственное образовательное учреждение высшего профессионального образования "Санкт-Петербургский Государственный политехнический университет" (ГОУ "СПбГПУ") | High-frequency wideband amplifier on mos transistors |
| CN204046530U (en) * | 2014-04-04 | 2014-12-24 | 嘉兴禾润电子科技有限公司 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
| CN106249023A (en) * | 2016-07-14 | 2016-12-21 | 电子科技大学 | A kind of micro-current sensing circuit |
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2018
- 2018-10-19 CN CN201811222149.9A patent/CN109474244A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2426220C1 (en) * | 2010-01-11 | 2011-08-10 | Государственное образовательное учреждение высшего профессионального образования "Санкт-Петербургский Государственный политехнический университет" (ГОУ "СПбГПУ") | High-frequency wideband amplifier on mos transistors |
| CN204046530U (en) * | 2014-04-04 | 2014-12-24 | 嘉兴禾润电子科技有限公司 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
| CN106249023A (en) * | 2016-07-14 | 2016-12-21 | 电子科技大学 | A kind of micro-current sensing circuit |
Non-Patent Citations (1)
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| 赵君赫等: "一种改进RGC结构10Gb/s无电感跨阻放大器设计", 《微波学报》 * |
Cited By (1)
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| CN112566433A (en) * | 2021-02-23 | 2021-03-26 | 坤元微电子(南京)有限公司 | Photoelectric amplification circuit |
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Application publication date: 20190315 |