CN103973246A - Low-noise transimpedance amplifier for optical receiver - Google Patents
Low-noise transimpedance amplifier for optical receiver Download PDFInfo
- Publication number
- CN103973246A CN103973246A CN201410135951.XA CN201410135951A CN103973246A CN 103973246 A CN103973246 A CN 103973246A CN 201410135951 A CN201410135951 A CN 201410135951A CN 103973246 A CN103973246 A CN 103973246A
- Authority
- CN
- China
- Prior art keywords
- nmos pipe
- drain electrode
- resistance
- trans
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 43
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 238000004891 communication Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a low-noise transimpedance amplifier for an optical receiver. The low-noise transimpedance amplifier for the optical receiver comprises an inverting amplifier body (011) and a feedback resistor (012), wherein the inverting amplifier body (011) and the feedback resistor (012) are connected in parallel. The inverting amplifier body (011) is composed of a cascode input stage, a differential intermediate stage, a source electrode follower output stage, a direct-current feedback circuit, an NMOS transistor (100) and a current source (112). The low-noise transimpedance amplifier is mainly used in a front amplifier of the optical receiver. The NMOS transistor (100) is controlled through an automatic gain control unit so that the transimpedance gain of the low-noise trans-impedance amplifier can be controlled. The nonlinear problem caused by too large alternating current output amplitude during signal amplification is solved, and the dynamic range is enlarged. Meanwhile, the problem of serious offset of a circuit direct-current work point during signal amplification is solved, and a direct-current signal is eliminated; in addition, the current injection technology is promoted, noise is lowered, and the sensitivity is effectively improved.
Description
Technical field
The present invention relates to the optoelectronic IC OEIC(Optical ElectronicIntegrated Circuits of optical communication electronic technology) field, relate in particular to a kind of low noise trans-impedance amplifier with automatic gain control of the optical receiver for communication system before light.
Background technology
Along with the fast development of optical fiber communication, effectively promote the extensive use of optical communication product, its performance has also been proposed to harsh requirement simultaneously.Optical receiver chip is as the important component part of optical communication system, and its performance is related to (comprising sensitivity, dynamic range etc.) transmission quality of light signal.Wherein, trans-impedance amplifier (Transimpedence Amp, TIA) is positioned at receiver foremost, is most important chip in optical receiver, and its noise and dynamic range performance have directly determined sensitivity and the dynamic range of optical receiver.As can be seen here, the performance of trans-impedance amplifier has determined the performance of optical receiver and even whole optical fiber telecommunications system to a great extent.Therefore, the Trans-impedance preamplifier of research and design high speed, high-gain, low noise, wide dynamic range, for the performance that improves optical receiver, structure at a high speed, capacity, long-distance optical fiber communication system have important value greatly, and the optical communication industry to China and IC industry all have very important impetus.
Optical communication system is converted to current pulse signal with photodiode by light pulse signal conventionally.Trans-impedance amplifier (TIA) is converted to corresponding voltage pulse signal by this current pulse signal and amplifies for follow-up circuit and process.Because the dynamic range of the photoelectric current receiving is in actual use very large, trans-impedance amplifier also corresponding requirements has very large input dynamic range.Therefore; trans-impedance amplifier will have corresponding automatic gain control (Automatic GainControl; AGC) and DC maladjustment adjust mechanism, but the DC maladjustment Circuit tuning of main flow usually can bring adverse effect or structure too complicated to the noiseproof feature of circuit.
Therefore, those skilled in the art is devoted to develop the automatic gain control of a kind of band and DC maladjustment control, but can not affect the low noise trans-impedance amplifier of trans-impedance amplifier noiseproof feature.
Summary of the invention
Because the above-mentioned defect of prior art, technical problem to be solved by this invention is to provide a kind of a kind of low noise trans-impedance amplifier with automatic gain control for optical receiver that can not affect trans-impedance amplifier noiseproof feature.
For achieving the above object, the invention provides a kind of low noise trans-impedance amplifier for optical receiver, it is characterized in that, comprise sign-changing amplifier (011) and feedback resistance (012); Described sign-changing amplifier (011) and described feedback resistance (012) are connected in parallel;
Described sign-changing amplifier (011) is realized by cascade input stage, difference intergrade, source follower output stage, D.C. feedback circuit, NMOS pipe (100) and current source (112);
Described D.C. feedback circuit is RC low pass filter.
Further, described cascade input stage comprises that NMOS pipe (101), NMOS manage (102) and resistance (103);
The grid of described NMOS pipe (101) is connected with the MINUS end of input signal (IN), described NMOS pipe (100) and described feedback resistance (012); The direct ground connection of source electrode (VGND); Drain electrode is connected with the drain electrode of described NMOS pipe (100), the described NMOS pipe source electrode of (102) and the MINUS of described current source (112) end;
The grid of described NMOS pipe (102) is connected with described D.C. feedback circuit; Drain electrode is connected with MINUS end and the described difference intergrade of described resistance (103); Source electrode manages the drain electrode of (100) with described NMOS and the drain electrode of described NMOS pipe (101) is connected;
The PLUS termination power (VDD) of described resistance (103); MINUS end is connected with drain electrode and the described difference intergrade of described NMOS pipe (102) respectively.
Further, described difference intergrade comprises NMOS pipe (104), NMOS pipe (105), resistance (106) and NMOS pipe (109);
The grid of described NMOS pipe (104) is connected with described cascade input stage; Source electrode is connected with the source electrode of described NMOS pipe (105) and the drain electrode of described NMOS pipe (109) respectively; Drain electrode is connected with described power supply (VDD);
The external DC level of grid of described NMOS pipe (105); Source electrode is connected with the source electrode of described NMOS pipe (104) and the drain electrode of described NMOS pipe (109) respectively; Drain electrode is connected with the MINUS end of described resistance (106), described D.C. feedback circuit and described source follower output stage;
The MINUS end of described resistance (106) is connected with drain electrode, described D.C. feedback circuit and the described source follower output stage of described NMOS pipe (105) respectively; PLUS end is connected with described power supply (VDD);
The grid of described NMOS pipe (109) is connected with described source follower output stage; Drain electrode is connected with the source electrode of described NMOS pipe (104) and the source electrode of described NMOS pipe (105) respectively; Source electrode source ground (VGND).
Further, described source follower output stage comprises NMOS pipe (110) and NMOS pipe (111);
The grid of described NMOS pipe (110) is connected with described D.C. feedback circuit and described difference intergrade; Source electrode is connected with output point (OUT), the described NMOS pipe drain electrode of (111) and the PLUS of described feedback resistance (012) end; Drain electrode is connected with described power supply (VDD);
The direct ground connection of source electrode (VGND) of described NMOS pipe (111); Drain electrode is connected with the PLUS end of output point (OUT) and described feedback resistance (012) and the source electrode of described NMOS pipe (110); The direct ground connection of source electrode (VGND).
Further, described RC low pass filter comprises resistance (107) and electric capacity (108);
The PLUS end of described resistance (107) is connected with the MINUS end of the drain electrode of described NMOS pipe (105), described resistance (106) and the grid of described NMOS pipe (110); MINUS end is connected with the described NMOS pipe grid of (102) and the PLUS of described electric capacity (108) end;
The PLUS end of described electric capacity (108) is connected with the described NMOS pipe grid of (102) and the MINUS of described resistance (107) end; MINUS end ground connection (VGND).
Further, described NMOS pipe (100) source electrode is connected with described input signal (IN), the described NMOS pipe grid of (101) and the MINUS of described resistance (012) end respectively; Drain electrode is connected with described NMOS pipe (101) drain electrode, the described NMOS pipe source electrode of (102) and the MINUS of described current source (112) end.
Further, power supply (VDD) described in described current source (112) PLUS termination; MINUS end is connected with the source electrode of the drain electrode of described NMOS pipe (101), described NMOS pipe (102) and the drain electrode of NMOS pipe (100) respectively.
Use the Optical Receiver Preamplifier for the low noise trans-impedance amplifier of optical receiver, wherein, comprised trans-impedance amplifier (01), singly turn differential amplifier (02), export driving (03) and automatic gain control unit (04);
The input of described trans-impedance amplifier (01) connects input signal, and output is connected with the described input that singly turns differential amplifier (02); The described output that singly turns differential amplifier (02) drives the input of (03) and the input of described automatic gain control unit (04) to be connected with described output respectively; Described output drives the output output signal of (03); The output of described automatic gain control unit (04) is connected with described trans-impedance amplifier (1);
Described automatic gain control unit (04) is connected with the grid of the described NMOS pipe (100) of described trans-impedance amplifier (01).
In a preferred embodiment of the present invention, described Optical Receiver Preamplifier also comprises photodiode bias voltage generation module (305), band-gap reference module (306) and benchmark generation module (307);
Described photodiode bias voltage generation module (305) is connected with photodiode; Be used to photodiode that bias voltage is provided;
Described band-gap reference module (306) and described benchmark generation module (307) link together with described power supply (VDD), for reference voltage and reference current are provided.
In preferred embodiments of the present invention, input signal is the current pulse signal being obtained by photodiode induction light signal.Sign-changing amplifier 011 with across resistance, feedback resistance 012 forms trans-impedance amplifier 01, trans-impedance amplifier is changed current pulse signal be enlarged into the voltage pulse signal of certain amplitude; Singly turn differential amplifier 02 this single-ended voltage signal is converted into both-end differential signal; Drive 03 finally output through output again, output drives 03 output resistance 50 Ω, is convenient to transmission line coupling.Trans-impedance amplifier 01 adopts parallel feedback structure, i.e. sign-changing amplifier 011 form in parallel with feedback resistance (across resistance) 012, and this structure has the advantages such as low input resistance, low output impedance and is widely adopted.Automatic gain control unit 04, in the time that input signal is larger, can reduce the transimpedance gain of trans-impedance amplifier, and while making large-signal, the amplitude of ac output voltage still remains in output voltage swing claimed range, improves dynamic range.
The low noise trans-impedance amplifier with automatic gain control for optical receiver of the present invention, the beneficial effect of some below having reached:
(1) when the present invention has solved large-signal by automatic gain control, exchange the excessive nonlinear problem causing of output amplitude, improve dynamic range: NMOS pipe 100 reduces transimpedance gain by two aspects: on the one hand, part alternating current flows through NMOS pipe 100, reduce to flow through the AC signal current across resistance 012, reduced output amplitude; On the other hand, NMOS pipe 100 has reduced the gain of sign-changing amplifier 011, has also reduced transimpedance gain.By this two aspect, the mode with respect to one-side adjusting across resistance resistance or amplifier gain, this kind of structure can more effectively regulate transimpedance gain, improved significantly dynamic range;
(2) the present invention, by the DC feedback loop of the compositions such as difference intergrade (NMOS pipe 104, NMOS pipe 105, NMOS pipe 106, NMOS manage 109), RC low pass filter (resistance 107, electric capacity 108) and common gate NMOS pipe 102 and load resistance 103, has solved large signal delay circuit DC point the serious problem being offset has occurred.This loop is negative feedback, add NMOS and manage 100 pipes for average electric current provides circulation path, has reached the function that direct current is eliminated, and makes to flow through direct current across resistance 012 very little, has therefore stablized output DC point, has improved dynamic range;
(3) the present invention is used for eliminating direct current signal, improve the DC feedback loop of dynamic range, structure is relatively simple, and and difference intergrade (NMOS pipe 104, NMOS pipe 105, NMOS pipe 106, NMOS pipe 109) common circuit, solved traditional direct current and eliminated the complexity of circuit;
(4) the present invention proposes current injection, inject extra Yi road electric current to NMOS pipe 101, on the basis that does not affect gain and bandwidth, increased the mutual conductance of NMOS pipe 101, reduced noise, effectively improved sensitivity;
(5) the present invention can be applied to the front end circuit of numerous optical receiver systems, comprises GePON, gigabit Ethernet and optical-fibre channel etc.
Below with reference to accompanying drawing, the technique effect of design of the present invention, concrete structure and generation is described further, to understand fully object of the present invention, feature and effect.
Brief description of the drawings
Fig. 1 is the electrical block diagram of a kind of low noise trans-impedance amplifier for optical receiver of the present invention;
Fig. 2 is the electrical block diagram of having applied the Optical Receiver Preamplifier chip of trans-impedance amplifier of the present invention;
Fig. 3 is the electrical block diagram of having applied another preferred embodiment of the Optical Receiver Preamplifier of trans-impedance amplifier of the present invention.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated, the present embodiment is implemented under with technical solution of the present invention prerequisite, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
The circuit structure of the low noise trans-impedance amplifier that is applied to optical receiver of the present invention specifically as shown in Figure 1, comprises sign-changing amplifier 011, feedback resistance 012.Feedback resistance 012 is connected between the output OUT and input IN of sign-changing amplifier 011, and sign-changing amplifier 011 is made up of three-stage amplifier and D.C. feedback circuit.
Wherein inverting amplifier 011 is realized by cascade input stage, difference intergrade, source follower output stage, RC low pass filter, NMOS pipe 100 and current source 112:
Cascade input stage comprises NMOS pipe 101, NMOS pipe 102 and resistance 103:
The grid of NMOS pipe 101 is connected with the MINUS end of input signal IN, NMOS pipe 100 and feedback resistance 012; The direct ground connection VGND of source electrode; Drain electrode is connected with drain electrode, the source electrode of NMOS pipe 102 and the MINUS end of current source 112 of NMOS pipe 100;
The grid of NMOS pipe 102 is connected with the MINUS end of resistance 107 and the PLUS end of electric capacity 108; Drain electrode is connected with the MINUS end of resistance 103 and the grid of NMOS pipe 104; Source electrode is connected with the drain electrode of NMOS pipe 100 and the drain electrode of NMOS pipe 101;
The PLUS termination power VDD of resistance 103; MINUS end is connected with the drain electrode of NMOS pipe 102 and the grid of NMOS pipe 104 respectively.
Difference intergrade comprises NMOS pipe 104, NMOS pipe 105, resistance 106 and NMOS pipe 109:
The grid of NMOS pipe 104 is connected with the MINUS end of resistance 103 and the drain electrode of NMOS pipe 102; Source electrode is connected with the source electrode of NMOS pipe 105 and the drain electrode of NMOS pipe 109 respectively; Drain electrode is connected with power vd D;
The external DC level of grid of NMOS pipe 105; Source electrode is connected with the source electrode of NMOS pipe 104 and the drain electrode of NMOS pipe 109 respectively; Drain electrode is connected with MINUS end, the PLUS end of resistance 107 and the grid of NMOS pipe 110 of resistance 106;
The PLUS termination power VDD of resistance 106; MINUS connects the drain electrode of NMOS pipe 105, the PLUS end of resistance 107, the grid of NMOS pipe 110;
NMOS manages 109 grids and is connected with the grid of NMOS pipe 111; Source ground VGND; Drain electrode is connected with the source electrode of NMOS pipe 104 and the source electrode of NMOS pipe 105.
Source follower output stage comprises NMOS pipe 110 and NMOS pipe 111:
NMOS manages 110 source electrodes and is connected with the drain electrode of output point OUT, NMOS pipe 111 and the PLUS end of feedback resistance 012; Drain electrode is connected with power vd D; Grid connects 105 drain electrodes, the MINUS end of resistance 106 and the PLUS end of resistance 107 of NMOS pipe;
The direct ground connection VGND of source electrode of NMOS pipe 111; Drain electrode is connected with the source electrode of output point OUT and NMOS pipe 110; Grid is connected with the grid of NMOS pipe 109.
RC low pass filter comprises resistance 107 and electric capacity 108:
The PLUS end of resistance 107 is connected with the MINUS end of the drain electrode of NMOS pipe 105, resistance 106 and the grid of NMOS pipe 110; MINUS end is connected with the grid of NMOS pipe 102 and the PLUS end of electric capacity 108;
The PLUS end of electric capacity 108 is connected with the MINUS end of the grid of NMOS pipe 102 and resistance 107; MINUS end ground connection VGND.
NMOS pipe 100NMOS pipe 100, as automatic gain adjustment pipe, between the grid and drain electrode of input pipe 101, is operated in linear zone, is equivalent to an adjustable resistance by gate voltage control, is used for regulating transimpedance gain; Source electrode is connected with the grid of input signal IN, NMOS pipe 101 and the MINUS end of resistance 012 respectively; Drain electrode is connected with the source electrode of 101 drain electrodes of NMOS pipe, NMOS pipe 102 and the MINUS end of current source 112.
The PLUS termination power VDD of current source 112; MINUS end is connected with drain electrode, the source electrode of NMOS pipe 102 and the drain electrode of NMOS pipe 100 of NMOS pipe 101 respectively.
The low noise trans-impedance amplifier that is applied to optical receiver of the present invention is a part for Optical Receiver Preamplifier chip, wherein Optical Receiver Preamplifier chip specifically as shown in Figure 2, comprises that low noise amplifying circuit comprises trans-impedance amplifier 01, singly turns differential amplifier 02, exports driving 03 and automatic gain control unit 04.Wherein, input signal is the current pulse signal being obtained by photodiode 05 induction light signal.Sign-changing amplifier 011 with across resistance, feedback resistance 012 forms trans-impedance amplifier 01, trans-impedance amplifier is changed current pulse signal be enlarged into the voltage pulse signal of certain amplitude; Singly turn differential amplifier 02 this single-ended voltage signal is converted into both-end differential signal; Drive 03 finally output through output again, output driver output resistance 50 Ω, are convenient to transmission line coupling.Trans-impedance amplifier 01 in Fig. 2, singly turn differential amplifier 02, output and drive 03 and automatic gain control unit 04 is common forms whole preamplifier 10.Wherein, OUTP and OUTN represent output.
Trans-impedance amplifier 01 in Fig. 2 adopts parallel feedback structure, i.e. sign-changing amplifier 011 and feedback resistance (across resistance) the 012nd, and form in parallel, this structure has the advantages such as low input resistance, low output impedance and is widely adopted.Automatic gain control unit 04, in the time that input signal is larger, can reduce the transimpedance gain of trans-impedance amplifier, and while making large-signal, the amplitude of ac output voltage still remains in output voltage swing claimed range, improves dynamic range.
The reason of restriction trans-impedance amplifier dynamic range has two:
The first, along with the increase of input signal, ac output voltage amplitude is excessive, has exceeded the restriction of output voltage swing;
The second, there is Non-zero Mean in the input signal of trans-impedance amplifier, and average electric current flows through across resistance, in the time that average electric current is excessive, can produce larger pressure drop, causes exporting DC level serious skew occurs, and makes amplifier depart from normal operation region.
Automatic gain control unit 04 can solve the problem being caused by first reason.The overload being caused by second reason has still limited the dynamic range of trans-impedance amplifier.This just need to adopt direct current elimination (DCCancellation) to suppress the impact of average current on amplifier DC point.
NMOS pipe 100 of the present invention, as automatic gain adjustment pipe, is used for regulating transimpedance gain, and its grid-control voltage is generated by the automatic gain control unit 04 in Fig. 2.The output of difference intergrade (NMOS pipe 104, NMOS pipe 105, NMOS pipe 106 and NMOS pipe 109) through RC low pass filter (resistance 107, electric capacity 108) afterwards as the gate bias voltage of bank tube 102 altogether.NMOS pipe 104, NMOS pipe 105, NMOS pipe 106, resistance 107, electric capacity 108 and NMOS pipe 109 have formed DC feedback loop, in the time of large-signal, can play the effect of stabilizing circuit DC point, this feedback control loop is exactly the direct current elimination functional unit that this invention carries, its structure is relatively simple, and shares a part of circuit (NMOS pipe 104, NMOS pipe 105, NMOS pipe 106, NMOS pipe 109) with difference intergrade.The introducing in Injection Current source 112 has increased the mutual conductance of input pipe 101, has reduced the input noise of whole trans-impedance amplifier.
Automatic gain control unit 04 is for detection of the AC signal amplitude singly turning between the output difference sub-signal of differential amplifier 02, and the output of automatic gain control unit 04 connects the grid of NMOS pipe 100.Detailed automatic gain control unit 04 circuit does not specifically provide here.
Whether activate the working region of trans-impedance amplifier 01 to be divided according to automatic gain control unit 04 and can be divided into " activation " region and " inactive " region:
(1) " inactive " region:
Hour, signal amplitude and average electric current are all less for input current signal, and automatic gain control unit 04 and direct current are eliminated functional unit and do not worked, and trans-impedance amplifier 01 is in linear work district.The grid-control voltage of now adjusting pipe 100 keeps the minimum output voltage of automatic gain control unit 04, adjusts pipe 100 in cut-off state, and un-activation is controlled in gain.Do not have electric current (direct current with exchange) to manage 100 by adjustment, electric current all flows through across resistance 012.Automatic gain control unit 04 is not worked, and difference intergrade is only for enlarging function.In the time of small-signal, automatic gain control unit 04 and direct current are eliminated and are not all activated, and trans-impedance amplifier 01 is operated in " inactive " region.
The noiseproof feature in " inactive " region has determined the sensitivity of trans-impedance amplifier 01, the mutual conductance that reduce input noise and must increase input pipe 101.Amplify the bias current in flow through NMOS pipe 101, NMOS pipe 102 and resistance 103 paths, can increase the mutual conductance of NMOS pipe 101, but this mode has two shortcomings: 1. the electric current that will increase the resistance 103 of flowing through must reduce the resistance of resistance 103, cause the gain of preamplifier to decline, bandwidth declines; 2. the electric current of the NMOS that flows through pipe 102 increases the mutual conductance increase that makes NMOS pipe 102, will increase input noise.
In order to overcome this two shortcomings, the present invention has adopted current injection.Use current source 112 to the extra road electric currents that inject of NMOS pipe 101, most of bias current of NMOS pipe 101 will be provided by current source 112 like this, the NMOS that flows through manage 102 and resistance 103 only have sub-fraction bias current.Under the condition of not losing gain and bandwidth, reduce noise so, improved sensitivity.
(2) " activation " region:
When input current signal increases to a certain degree, because output AC amplitude is excessive or output DC point is seriously offset, distortion now must operate at " activation " region guarantee trans-impedance amplifier 01 and keeps normal operating state trans-impedance amplifier 01.
Automatic gain control unit 04 produces the grid-control voltage of NMOS pipe 100 according to signal magnitude, regulate its equivalent resistance, and signal is larger, and grid-control voltage is larger, and equivalent resistance is less.In " activation " region, NMOS manages 100 conductings, is operated in linear zone, now, has electric current to flow through NMOS pipe 100, comprises direct current and exchanges.
In the time of large-signal, a part for input exchange signal flows through NMOS pipe 100, has reduced by the AC signal across resistance 012, and amplitude output signal is corresponding to diminish, and has reduced transimpedance gain; The equivalent resistance of NMOS pipe 100 has reduced the gain of cascade input stage simultaneously, has also just reduced the gain of sign-changing amplifier 011, and therefore whole loop gain also increases and reduces with signal, and loop stability does not increase and worsens with signal.Input signal is larger, and it is larger that NMOS manages 100 grid-control voltages, flows through the shared ratio of the ac current signal of NMOS pipe 100 larger, and equivalent resistance is less, and the transimpedance gain of trans-impedance amplifier 01 is less.In a word, manage 100 control by NMOS, reduced transimpedance gain, solved and exchanged the excessive impact on dynamic range of output amplitude.
When NMOS pipe 100 regulates transimpedance gain, eliminate unit for direct current the circulation path of input-mean electric current is provided.When large-signal, due to the effect of direct current negative feedback loop (NMOS pipe 104, NMOS pipe 105, NMOS pipe 106, resistance 107, electric capacity 108, NMOS pipe 109), a big chunk of average electric current flows through NMOS pipe 100, only has a very little part to flow through across resistance 012, just very little across the pressure drop in resistance 012.And input signal is larger, the ratio of direct current that flows through NMOS pipe 100 is also larger, makes across the pressure drop in resistance 012 relatively stablely, and output DC level remains in normal range (NR).DC feedback loop has completed the direct current of input current signal and has eliminated function, the relatively stable DC point of circuit, and while having solved large-signal, DC point is offset the nonlinear problem of the trans-impedance amplifier causing.
Trans-impedance amplifier circuit structure of the present invention has wide dynamic range, highly sensitive advantage, chip power-consumption and area have been saved simultaneously, can be applied in the Trans-impedance preamplifier chip of high-performance optical receiver system, be positioned at chip foremost, complete the function that photo-signal is converted into voltage signal, it is the most crucial module of whole trans-impedance amplifier chip.
A specific embodiment of the present invention as shown in Figure 3.The 300th, external photodiode, it in solid line boxes, is the composition of preamplifier entirety chip, its module consists of: 301 is the trans-impedance amplifier of the present invention shown in Fig. 2, the 302nd, single slip parallel circuit, the 303rd, output driving circuit, the 304th, automatic gain control module, the 305th, photodiode bias voltage generation module, the 306th, band-gap reference module, 307 is benchmark generation module.Wherein, VDD is power supply, and GND represents ground connection, and OUTP and OUTN represent output.
In the present embodiment, trans-impedance amplifier circuit 301 is applied to preamplifier entirety chip foremost, it is most crucial module, the anode of its input termination photodiode 300, and the negative electrode of photodiode 300 connects photodiode bias voltage generation module 305, photodiode bias voltage generation module 305, for photodiode 300 provides bias voltage, makes photodiode 300 in reverse-biased state, and the intensity of induction light signal generates the current pulse signal of corresponding amplitude.Trans-impedance amplifier 301 receives these current signals, by its conversion and be enlarged into the voltage pulse signal of certain amplitude.This voltage pulse signal outputs to follow-up single-ended transfer difference circuit 302 and is converted into differential signal, and differential signal is conducive to suppress common-mode noise, is convenient to subsequent treatment simultaneously.Differential signal is finally exported through output driving circuit 303 again, and the object of output driving circuit 303 is to improve driving force, mates with transmission line simultaneously.Automatic gain control module 304 produces voltage control signal according to the size of signal, and this control signal offers trans-impedance amplifier 301 and realizes gain control.In addition, band-gap reference module 306 and benchmark generation module 307 provide reference voltage and reference current for circuit.
The present invention has solved the relevant issues such as dynamic range, sensitivity effectively, a kind of structure of new trans-impedance amplifier circuit has been proposed, its wide dynamic range, highly sensitive feature performance benefit, and the advantage of saving power consumption and area, can be applied in the Trans-impedance preamplifier chip of high-performance optical receiver system (GePON, gigabit Ethernet, optical-fibre channel etc.).
More than describe preferred embodiment of the present invention in detail.The ordinary skill that should be appreciated that this area just can design according to the present invention be made many modifications and variations without creative work.Therefore, all technical staff in the art, all should be in by the determined protection range of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (9)
1. for a low noise trans-impedance amplifier for optical receiver, it is characterized in that, comprise sign-changing amplifier (011) and feedback resistance (012); Described sign-changing amplifier (011) and described feedback resistance (012) are connected in parallel;
Described sign-changing amplifier (011) is realized by cascade input stage, difference intergrade, source follower output stage, D.C. feedback circuit, NMOS pipe (100) and current source (112);
Described D.C. feedback circuit is RC low pass filter.
2. the low noise trans-impedance amplifier for optical receiver as claimed in claim 1, wherein, described cascade input stage comprises that NMOS pipe (101), NMOS manage (102) and resistance (103);
The grid of described NMOS pipe (101) is connected with the MINUS end of input signal (IN), described NMOS pipe (100) and described feedback resistance (012); The direct ground connection of source electrode (VGND); Drain electrode is connected with the drain electrode of described NMOS pipe (100), the described NMOS pipe source electrode of (102) and the MINUS of described current source (112) end;
The grid of described NMOS pipe (102) is connected with described D.C. feedback circuit; Drain electrode is connected with MINUS end and the described difference intergrade of described resistance (103); Source electrode manages the drain electrode of (100) with described NMOS and the drain electrode of described NMOS pipe (101) is connected;
The PLUS termination power (VDD) of described resistance (103); MINUS end is connected with drain electrode and the described difference intergrade of described NMOS pipe (102) respectively.
3. the low noise trans-impedance amplifier for optical receiver as claimed in claim 2, wherein, described difference intergrade comprises NMOS pipe (104), NMOS pipe (105), resistance (106) and NMOS pipe (109);
The grid of described NMOS pipe (104) is connected with described cascade input stage; Source electrode is connected with the source electrode of described NMOS pipe (105) and the drain electrode of described NMOS pipe (109) respectively; Drain electrode is connected with described power supply (VDD);
The external DC level of grid of described NMOS pipe (105); Source electrode is connected with the source electrode of described NMOS pipe (104) and the drain electrode of described NMOS pipe (109) respectively; Drain electrode is connected with the MINUS end of described resistance (106), described D.C. feedback circuit and described source follower output stage;
The MINUS end of described resistance (106) is connected with drain electrode, described D.C. feedback circuit and the described source follower output stage of described NMOS pipe (105) respectively; PLUS end is connected with described power supply (VDD);
The grid of described NMOS pipe (109) is connected with described source follower output stage; Drain electrode is connected with the source electrode of described NMOS pipe (104) and the source electrode of described NMOS pipe (105) respectively; Source ground (VGND).
4. the low noise trans-impedance amplifier for optical receiver as claimed in claim 3, wherein, described source follower output stage comprises NMOS pipe (110) and NMOS pipe (111);
The grid of described NMOS pipe (110) is connected with described D.C. feedback circuit and described difference intergrade;
Source electrode is connected with output point (OUT), the described NMOS pipe drain electrode of (111) and the PLUS of described feedback resistance (012) end; Drain electrode is connected with described power supply (VDD);
The direct ground connection of source electrode (VGND) of described NMOS pipe (111); Drain electrode is connected with the PLUS end of output point (OUT) and described feedback resistance (012) and the source electrode of described NMOS pipe (110); The direct ground connection of source electrode (VGND).
5. the low noise trans-impedance amplifier for optical receiver as claimed in claim 4, wherein, described RC low pass filter comprises resistance (107) and electric capacity (108);
The PLUS end of described resistance (107) is connected with the MINUS end of the drain electrode of described NMOS pipe (105), described resistance (106) and the grid of described NMOS pipe (110); MINUS end is connected with the described NMOS pipe grid of (102) and the PLUS of described electric capacity (108) end;
The PLUS end of described electric capacity (108) is connected with the described NMOS pipe grid of (102) and the MINUS of described resistance (107) end; MINUS end ground connection (VGND).
6. the low noise trans-impedance amplifier for optical receiver as claimed in claim 1, wherein, described NMOS pipe (100) source electrode is connected with described input signal (IN), the described NMOS pipe grid of (101) and the MINUS of described resistance (012) end respectively; Drain electrode is connected with described NMOS pipe (101) drain electrode, the described NMOS pipe source electrode of (102) and the MINUS of described current source (112) end.
7. the low noise trans-impedance amplifier for optical receiver as claimed in claim 1, wherein, power supply (VDD) described in described current source (112) PLUS termination; MINUS end is connected with the source electrode of the drain electrode of described NMOS pipe (101), described NMOS pipe (102) and the drain electrode of NMOS pipe (100) respectively.
8. one kind uses the Optical Receiver Preamplifier of the low noise trans-impedance amplifier for optical receiver as claimed in claim 1, wherein, comprise trans-impedance amplifier (01), singly turn differential amplifier (02), export driving (03) and automatic gain control unit (04);
The input of described trans-impedance amplifier (01) connects input signal, and output is connected with the described input that singly turns differential amplifier (02); The described output that singly turns differential amplifier (02) drives the input of (03) and the input of described automatic gain control unit (04) to be connected with described output respectively; Described output drives the output output signal of (03); The output of described automatic gain control unit (04) is connected with described trans-impedance amplifier (1);
Described automatic gain control unit (04) is connected with the grid of the described NMOS pipe (100) of described trans-impedance amplifier (01).
9. Optical Receiver Preamplifier as claimed in claim 8, is characterized in that, also comprises photodiode bias voltage generation module (305), band-gap reference module (306) and benchmark generation module (307); Described photodiode bias voltage generation module (305) is connected with photodiode; Be used to photodiode that bias voltage is provided;
Described band-gap reference module (306) and described benchmark generation module (307) link together with described power supply (VDD), for reference voltage and reference current are provided.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410135951.XA CN103973246A (en) | 2014-04-04 | 2014-04-04 | Low-noise transimpedance amplifier for optical receiver |
| CN201420163707.XU CN204046530U (en) | 2014-04-04 | 2014-04-04 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410135951.XA CN103973246A (en) | 2014-04-04 | 2014-04-04 | Low-noise transimpedance amplifier for optical receiver |
| CN201420163707.XU CN204046530U (en) | 2014-04-04 | 2014-04-04 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103973246A true CN103973246A (en) | 2014-08-06 |
Family
ID=91334097
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410135951.XA Pending CN103973246A (en) | 2014-04-04 | 2014-04-04 | Low-noise transimpedance amplifier for optical receiver |
| CN201420163707.XU Expired - Lifetime CN204046530U (en) | 2014-04-04 | 2014-04-04 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420163707.XU Expired - Lifetime CN204046530U (en) | 2014-04-04 | 2014-04-04 | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN103973246A (en) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104539373A (en) * | 2014-12-30 | 2015-04-22 | 天津大学 | High-speed CMOS monolithic integration light receiver front end of cross coupling structure |
| CN105323001A (en) * | 2015-11-26 | 2016-02-10 | 武汉光迅科技股份有限公司 | OTDR optical signal receiving circuit |
| CN106253859A (en) * | 2016-08-01 | 2016-12-21 | 中国电子科技集团公司第二十四研究所 | A kind of photo-detector and assembly thereof and photoelectricity front-end amplifier circuit |
| CN106249023A (en) * | 2016-07-14 | 2016-12-21 | 电子科技大学 | A kind of micro-current sensing circuit |
| CN106301375A (en) * | 2015-06-29 | 2017-01-04 | 硅谷实验室公司 | Obtain high DC gain and the amplifier topology of wide output voltage range |
| CN106533375A (en) * | 2016-10-27 | 2017-03-22 | 天津大学 | High-bandwidth pseudo-differential structure regulated cascade trans-resistance amplifier |
| CN107425924A (en) * | 2017-06-23 | 2017-12-01 | 千度芯通（厦门）微电子科技有限公司 | Cross point of eye pattern adjustment circuit |
| CN108072372A (en) * | 2017-11-28 | 2018-05-25 | 西北工业大学 | A kind of integrated attitude measurement system for microsatellite |
| CN108173524A (en) * | 2018-02-08 | 2018-06-15 | 厦门亿芯源半导体科技有限公司 | Suitable for the double loop automatic gain control circuit of high bandwidth TIA |
| CN109274341A (en) * | 2018-08-19 | 2019-01-25 | 天津大学 | Fully differential transimpedance amplifier based on standard CMOS process visible light communication |
| CN109586675A (en) * | 2018-11-27 | 2019-04-05 | 淮阴工学院 | Low noise trans-impedance amplifier |
| CN110190821A (en) * | 2019-05-10 | 2019-08-30 | 南京牛芯微电子有限公司 | A kind of super trans-impedance amplifier of high sensitivity ultra wide band |
| CN110212875A (en) * | 2019-05-20 | 2019-09-06 | 西安交通大学 | A kind of linear trans-impedance amplifier and its design method and application |
| CN110212869A (en) * | 2019-06-10 | 2019-09-06 | 成都英思嘉半导体技术有限公司 | The overload current bearing calibration of the TIA used in photoreceiver and circuit |
| CN110995170A (en) * | 2019-12-25 | 2020-04-10 | 武汉邮电科学研究院有限公司 | High dynamic range trans-impedance amplifier |
| CN111313853A (en) * | 2020-04-09 | 2020-06-19 | 宁波芯辉科技有限公司 | Dual-mode multi-channel trans-impedance amplifier |
| CN111565030A (en) * | 2020-03-10 | 2020-08-21 | 东南大学 | Linear automatic gain control amplifier for detecting forward current in PAM4 optical receiver |
| WO2021102656A1 (en) * | 2019-11-25 | 2021-06-03 | 深圳市汇顶科技股份有限公司 | Amplification circuit |
| CN113300675A (en) * | 2021-04-29 | 2021-08-24 | 东南大学 | Burst mode optical receiver trans-impedance amplifier circuit with reduced settling time |
| CN114866045A (en) * | 2022-04-12 | 2022-08-05 | 中国科学院微电子研究所 | Laser radar trans-impedance amplifier and application thereof |
| CN117294264A (en) * | 2023-11-22 | 2023-12-26 | 成都明夷电子科技有限公司 | Low-noise transimpedance amplifier for optical receiver |
| CN118584391A (en) * | 2024-08-07 | 2024-09-03 | 山东博奥斯能源科技有限公司 | Bidirectional direct-current power supply ripple monitoring system and method based on measured electric variable |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017069776A1 (en) | 2015-10-23 | 2017-04-27 | Hewlett Packard Enterprise Development | Noise-canceling transimpedance amplifier (tia) systems |
| CN106026948B (en) * | 2016-05-16 | 2019-02-12 | 华南理工大学 | A kind of high capacitance driving Low-Power CMOS trans-impedance amplifier |
| CN105847733B (en) * | 2016-05-25 | 2019-01-11 | 北京中电宏业科技有限公司 | A kind of fully integrated optical receiver module |
| EP3297184B1 (en) * | 2016-09-15 | 2018-12-12 | Knowledge Development for POF SL | Transimpedance amplifier for high-speed optical communications based on linear modulations |
| CN109905091B (en) * | 2017-12-11 | 2023-04-21 | 光宝新加坡有限公司 | Differential transimpedance amplifier |
| CN110545083B (en) * | 2018-05-28 | 2024-06-11 | 深圳市芯波微电子有限公司 | Transimpedance amplifier |
| CN110572133A (en) * | 2018-06-05 | 2019-12-13 | 南京凯鼎电子科技有限公司 | Fully differential transimpedance amplifier circuit and communication device |
| CN109474244A (en) * | 2018-10-19 | 2019-03-15 | 天津大学 | A kind of wide-band high gain RGC type trans-impedance amplifier with grid voltage feedback |
| CN109510598A (en) * | 2018-11-16 | 2019-03-22 | 淮阴工学院 | A kind of high sensitivity wide dynamic range photoreceiver pre-amplification circuit |
| CN109857181B (en) * | 2018-12-11 | 2020-10-30 | 江苏埃夫信自动化工程有限公司 | Current-voltage conversion circuit for sensor |
| CN109861661A (en) * | 2019-03-05 | 2019-06-07 | 深圳市傲科光电子有限公司 | A kind of trans-impedance amplifier and trans-impedance amplifier circuit |
| CN111628729B (en) * | 2020-06-22 | 2023-04-28 | 西安电子科技大学芜湖研究院 | Large-linear dynamic range high-bandwidth reconfigurable transimpedance amplifier |
| CN111884605B (en) * | 2020-08-10 | 2024-05-17 | 上海川土微电子有限公司 | Differential operational amplifier |
| CN113014217B (en) * | 2020-12-31 | 2024-07-05 | 中国科学院微电子研究所 | MEMS sensor driving circuit |
| CN114050793B (en) * | 2021-11-16 | 2024-03-29 | 成都明夷电子科技股份有限公司 | Amplification method adopting low-cost over-frequency high-speed transimpedance amplifier |
| CN114383640B (en) * | 2021-12-16 | 2024-06-11 | 之江实验室 | Distributed optical fiber Bragg grating sensor measurement and control system |
| CN116886061B (en) * | 2023-09-06 | 2023-11-28 | 成都通量科技有限公司 | Single-ended variable gain amplifier with low additional phase shift |
| CN118101046B (en) * | 2024-04-29 | 2024-07-23 | 南昌大学 | Equivalent circuit structure and illumination communication combined performance analysis system of LED array |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800605A (en) * | 2010-03-04 | 2010-08-11 | 中兴通讯股份有限公司 | Optical receiver, control device thereof and control method thereof |
| CN101807885A (en) * | 2010-03-10 | 2010-08-18 | 烽火通信科技股份有限公司 | Method and circuit for controlling output signals of trans-impedance amplifier |
| US20120224868A1 (en) * | 2011-03-02 | 2012-09-06 | International Business Machines Corporation | Optical receiver based on a decision feedback equalizer |
-
2014
- 2014-04-04 CN CN201410135951.XA patent/CN103973246A/en active Pending
- 2014-04-04 CN CN201420163707.XU patent/CN204046530U/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800605A (en) * | 2010-03-04 | 2010-08-11 | 中兴通讯股份有限公司 | Optical receiver, control device thereof and control method thereof |
| CN101807885A (en) * | 2010-03-10 | 2010-08-18 | 烽火通信科技股份有限公司 | Method and circuit for controlling output signals of trans-impedance amplifier |
| US20120224868A1 (en) * | 2011-03-02 | 2012-09-06 | International Business Machines Corporation | Optical receiver based on a decision feedback equalizer |
Non-Patent Citations (2)
| Title |
|---|
| 张书磊 等: "1.25Gb/s CMOS高灵敏度宽动态范围跨阻放大器", 《半导体光电》 * |
| 张书磊 等: "跨阻放大器自动静噪电路的设计与实现", 《电子技术应用》 * |
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104539373A (en) * | 2014-12-30 | 2015-04-22 | 天津大学 | High-speed CMOS monolithic integration light receiver front end of cross coupling structure |
| CN106301375A (en) * | 2015-06-29 | 2017-01-04 | 硅谷实验室公司 | Obtain high DC gain and the amplifier topology of wide output voltage range |
| CN105323001A (en) * | 2015-11-26 | 2016-02-10 | 武汉光迅科技股份有限公司 | OTDR optical signal receiving circuit |
| CN105323001B (en) * | 2015-11-26 | 2019-07-02 | 武汉光迅科技股份有限公司 | A kind of OTDR optical signal receiving circuit |
| CN106249023B (en) * | 2016-07-14 | 2019-03-29 | 电子科技大学 | A kind of micro-current sensing circuit |
| CN106249023A (en) * | 2016-07-14 | 2016-12-21 | 电子科技大学 | A kind of micro-current sensing circuit |
| CN106253859A (en) * | 2016-08-01 | 2016-12-21 | 中国电子科技集团公司第二十四研究所 | A kind of photo-detector and assembly thereof and photoelectricity front-end amplifier circuit |
| CN106533375A (en) * | 2016-10-27 | 2017-03-22 | 天津大学 | High-bandwidth pseudo-differential structure regulated cascade trans-resistance amplifier |
| CN107425924B (en) * | 2017-06-23 | 2023-03-14 | 厦门亿芯源半导体科技有限公司 | Eye diagram cross point adjusting circuit |
| CN107425924A (en) * | 2017-06-23 | 2017-12-01 | 千度芯通（厦门）微电子科技有限公司 | Cross point of eye pattern adjustment circuit |
| CN108072372A (en) * | 2017-11-28 | 2018-05-25 | 西北工业大学 | A kind of integrated attitude measurement system for microsatellite |
| CN108173524A (en) * | 2018-02-08 | 2018-06-15 | 厦门亿芯源半导体科技有限公司 | Suitable for the double loop automatic gain control circuit of high bandwidth TIA |
| CN108173524B (en) * | 2018-02-08 | 2021-02-19 | 厦门亿芯源半导体科技有限公司 | Dual-loop automatic gain control circuit suitable for high-bandwidth TIA |
| CN109274341A (en) * | 2018-08-19 | 2019-01-25 | 天津大学 | Fully differential transimpedance amplifier based on standard CMOS process visible light communication |
| CN109586675A (en) * | 2018-11-27 | 2019-04-05 | 淮阴工学院 | Low noise trans-impedance amplifier |
| CN110190821A (en) * | 2019-05-10 | 2019-08-30 | 南京牛芯微电子有限公司 | A kind of super trans-impedance amplifier of high sensitivity ultra wide band |
| CN110212875A (en) * | 2019-05-20 | 2019-09-06 | 西安交通大学 | A kind of linear trans-impedance amplifier and its design method and application |
| CN110212869A (en) * | 2019-06-10 | 2019-09-06 | 成都英思嘉半导体技术有限公司 | The overload current bearing calibration of the TIA used in photoreceiver and circuit |
| CN110212869B (en) * | 2019-06-10 | 2021-06-29 | 成都英思嘉半导体技术有限公司 | Overload current correction method and circuit for TIA used in optical receiver |
| CN113316895A (en) * | 2019-11-25 | 2021-08-27 | 深圳市汇顶科技股份有限公司 | Amplifying circuit |
| WO2021102656A1 (en) * | 2019-11-25 | 2021-06-03 | 深圳市汇顶科技股份有限公司 | Amplification circuit |
| CN110995170A (en) * | 2019-12-25 | 2020-04-10 | 武汉邮电科学研究院有限公司 | High dynamic range trans-impedance amplifier |
| CN110995170B (en) * | 2019-12-25 | 2023-04-21 | 武汉邮电科学研究院有限公司 | High dynamic range transimpedance amplifier |
| CN111565030A (en) * | 2020-03-10 | 2020-08-21 | 东南大学 | Linear automatic gain control amplifier for detecting forward current in PAM4 optical receiver |
| CN111565030B (en) * | 2020-03-10 | 2023-11-17 | 东南大学 | Linear Automatic Gain Control Amplifier for Forward Current Detection in PAM4 Optical Receiver |
| CN111313853A (en) * | 2020-04-09 | 2020-06-19 | 宁波芯辉科技有限公司 | Dual-mode multi-channel trans-impedance amplifier |
| CN111313853B (en) * | 2020-04-09 | 2023-07-21 | 西安芯辉光电科技有限公司 | Dual-mode multichannel transimpedance amplifier |
| CN113300675A (en) * | 2021-04-29 | 2021-08-24 | 东南大学 | Burst mode optical receiver trans-impedance amplifier circuit with reduced settling time |
| CN113300675B (en) * | 2021-04-29 | 2024-03-12 | 东南大学 | Burst mode optical receiver transimpedance amplifier circuit with reduced settling time |
| CN114866045A (en) * | 2022-04-12 | 2022-08-05 | 中国科学院微电子研究所 | Laser radar trans-impedance amplifier and application thereof |
| CN114866045B (en) * | 2022-04-12 | 2024-08-09 | 中国科学院微电子研究所 | Laser radar transimpedance amplifier and application thereof |
| CN117294264A (en) * | 2023-11-22 | 2023-12-26 | 成都明夷电子科技有限公司 | Low-noise transimpedance amplifier for optical receiver |
| CN117294264B (en) * | 2023-11-22 | 2024-03-12 | 成都明夷电子科技有限公司 | Low-noise transimpedance amplifier for optical receiver |
| CN118584391A (en) * | 2024-08-07 | 2024-09-03 | 山东博奥斯能源科技有限公司 | Bidirectional direct-current power supply ripple monitoring system and method based on measured electric variable |
Also Published As
| Publication number | Publication date |
|---|---|
| CN204046530U (en) | 2014-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204046530U (en) | A kind of low noise trans-impedance amplifier and Optical Receiver Preamplifier thereof | |
| CN101651449B (en) | Optical input preamplifier for optical communication receiver | |
| CN109638642B (en) | High-speed large-current laser driving circuit and current modulation method thereof | |
| CN104242844B (en) | It is a kind of can realize automatic growth control across resistance amplifying circuit | |
| US9407218B2 (en) | Multi-stage transimpedance amplifier and a method of using the same | |
| JP5630325B2 (en) | Variable gain differential amplifier circuit | |
| CN102820857A (en) | Transimpedance amplifier with broad band and high gain, design method and amplifier chip | |
| CN104539373A (en) | High-speed CMOS monolithic integration light receiver front end of cross coupling structure | |
| CN103929139B (en) | The transimpedance preamplifier of the photoreceiver of High Precision Automatic gain control | |
| CN106505961B (en) | The automatic gain control circuit of quick response | |
| CN106656061B (en) | Transimpedance amplifier | |
| CN110212875A (en) | A kind of linear trans-impedance amplifier and its design method and application | |
| CN101807885A (en) | Method and circuit for controlling output signals of trans-impedance amplifier | |
| Atef et al. | 10Gbit/s 2mW inductorless transimpedance amplifier | |
| CN109586675A (en) | Low noise trans-impedance amplifier | |
| CN204145425U (en) | A kind of can realize automatic growth control across resistance amplifying circuit | |
| CN111525896A (en) | High-gain high-bandwidth variable gain amplifier and amplifier chip | |
| Xie et al. | Low-noise high-linearity 56Gb/s PAM-4 optical receiver in 45nm SOI CMOS | |
| CN114050793B (en) | Amplification method adopting low-cost over-frequency high-speed transimpedance amplifier | |
| CN109039473A (en) | The front-end circuit and its low noise acoustic processing method of high-speed light receiver | |
| CN106026948B (en) | A kind of high capacitance driving Low-Power CMOS trans-impedance amplifier | |
| CN112272061A (en) | Analog front-end circuit of optical receiver | |
| CN110445551B (en) | 25Gb/s optical receiver automatic gain control module with reset function | |
| CN107749743A (en) | Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS | |
| CN103259492A (en) | Video driver output amplifier circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170125 Address after: Jiaxing City, Zhejiang province 314006 Ling Gong Tang Road No. 3339 (Jiaxing city) building A Room 301 Applicant after: Jiaxing Heroic Electronic Technology Co., Ltd. Address before: Jiaxing City, Zhejiang province 314006 Ling Gong Tang Road No. 3339 (Jiaxing city) building A Room 301 Applicant before: Jiaxing Heroic Electronic Technology Co., Ltd. Applicant before: Jiaxing Tai Ding integrated optoelectronic circuit company limited |
|
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140806 |
|
| RJ01 | Rejection of invention patent application after publication |