CN107749743A - Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS - Google Patents
Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS Download PDFInfo
- Publication number
- CN107749743A CN107749743A CN201710937100.0A CN201710937100A CN107749743A CN 107749743 A CN107749743 A CN 107749743A CN 201710937100 A CN201710937100 A CN 201710937100A CN 107749743 A CN107749743 A CN 107749743A
- Authority
- CN
- China
- Prior art keywords
- amplifier
- cascode
- pipe
- main amplifier
- trans
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to a kind of active feedback cascode trans-impedance amplifier based on SiGe BiCMOS, including current source and electric capacity, booster amplifier and main amplifier, wherein, main amplifier uses cascode structure；The current source output that provides photoelectric current in parallel with electric capacity, output end are connected with the ground level of main amplifier cascode pipe, other end ground connection；Booster amplifier uses load-carrying grounded emitter amplifier structure, its input is terminated on the colelctor electrode of main amplifier cascode pipe and the emitting stage of cobasis pipe, where signal flows into booster amplifier on branch road, after further amplification via booster amplifier cascode pipe, flow back on the ground level of cobasis pipe of main amplifier, active feedback is formed, to improve the voltage between the emitting stage and ground level of main amplifier cobasis pipe.
Description
Technical field
The invention belongs to optic communication, light network and visible light communication system, it is related to a kind of bipolar with germanium silicon-complementary metal oxygen
Compound semiconductor (SiGe BiCMOS) process compatible, trans-impedance amplifier using active feedback cascode technology.
Background technology
With the emergence of the big data carrier such as Internet of Things, cloud computing and mobile Internet, transinformation avalanche type increases,
The rapid growth of data rate arrives traditional electrical connection driving the limit of its performance.Bandwidth is being improved, is reducing electromagnetic interference
In terms of degree and the channel loss reduced, light network has remarkable performance.Light network is using photon as information carrier, and it is than tradition
Being electrically interconnected has the advantages of more notable.For example, transmission capacity is big, safe, crosstalk is small, and electromagnetism interference (EMI)
Ability is strong.
One complete optical receiver systems is by photodetector (PD), trans-impedance amplifier (TIA), limiting amplifier (LA)
Formed with modules such as judgement regenerative circuits.Wherein, the effect of photodetector is the faint light pulse that will be received from optical fiber
Signal is converted to current pulse signal.This faint current pulse signal is changed into voltage pulse letter by trans-impedance amplifier again
Number, drive late-class circuit.The main function of limiting amplifier is further to amplify the output voltage of trans-impedance amplifier, after convenient
Level processing of circuit.Adjudicate regenerative circuit and recover the original figure level signal that optical sender end is sent, so as to complete whole numeral
The purpose of communication.In recent years, single chip integrated photoreceiver front-end circuit engineering is more and more ripe, which substantially obviates by mixing
The integrated electromagnetic noise interference introduced, the parasitic ginseng of extraneous environmental noise and pressure welding line and bond pad is reduced to greatest extent
Amount, so as to realize the raising of photoreceiver overall performance.Further, since the chip area of monolithic integrated photoreceiver subtracts significantly
It is small, thus prepare cost and be greatly reduced.
However, the ghost effect due to cmos device inherently is larger, and silicon is indirect bandgap material, is based on
Photodetector quantum efficiency prepared by standard CMOS process is relatively low, so being difficult to prepare high speed, highly sensitive single-chip integration
Photoreceiver chip.Therefore, it is compatible with CMOS technology and gradual with the strong SiGe BiCMOS techniques of high transconductance, driving force
Come into the visual field of people.Compared with standard CMOS process, SiGe BiCMOS techniques except higher cut-off frequency can be provided,
The more excellent photodetector of performance can also be prepared, thus the development for high speed, high sensitivity monolithic integrated photoreceiver provides
May.
At present, the trans-impedance amplifier based on the design of SiGe BiCMOS techniques is put using cascode level amplifier, cascode more
The big various structures such as device and adjustment type cascode (Regulated Cascode, RGC) amplifier.Grounded base amplifier and
Although RGC amplifiers with relatively low input impedance, can be effectively isolated larger input capacitance, so as to expand bandwidth,
Compared with cascode level technology, its noiseproof feature is poor.In addition, inductor peaking technology is also a kind of conventional lifting bandwidth and reduction
Noise means, but the introducing of spiral inductance dramatically increases domain entire area, thus manufacturing cost is substantially improved, thus it is uncomfortable
Preparation for low cost optical receiver.In addition, inductance can also increase substrate coupling, higher crosstalk is introduced.Parallel feedback
(FB) trans-impedance amplifier is to realize one of high bandwidth and highly sensitive conventional topological structure, but bandwidth enhancement can cause across resistance
Balance between gain and power consumption.Generally use optimizes the parameter values of feedback resistance and input transistors maximize mutual conductance,
And then noise is minimized, but this is to sacrifice bandwidth and power consumption as cost.In terms of circuit structure, cascode amplifier be by
The packed structures that cascode level and grounded base are formed, the collector voltage of cascode level are supplied by grounded base, so inclined when cascode level
When configuration state changes, the bias state of grounded base also changes therewith.Compared with RGC structures, cascode structure can be more
The influence of Muller electric capacity is weakened well, thus can realize broader working band.
The content of the invention
For overcome the deficiencies in the prior art, the present invention is on the basis of traditional cascode trans-impedance amplifier, there is provided a kind of
Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS techniques.Technical scheme is as follows：
A kind of active feedback cascode trans-impedance amplifier based on SiGe BiCMOS, including current source and electric capacity, auxiliary
Amplifier and main amplifier, it is characterised in that booster amplifier and main amplifier use Ge-Si heterojunction bipolar transistor
The cascode level input that SiGeHBT is used as, wherein,
Main amplifier uses cascode structure, and the current signal of input is converted into voltage signal, the biasing of cobasis pipe
Voltage is provided by the output end of booster amplifier, finally exports the voltage signal after changing, amplifying；
The current source output that provides photoelectric current in parallel with electric capacity, output end are connected with the ground level of main amplifier cascode pipe, separately
One end is grounded；
Booster amplifier uses load-carrying grounded emitter amplifier structure, and it inputs the current collection for terminating at main amplifier cascode pipe
On the emitting stage of pole and cobasis pipe, where signal flows into booster amplifier on branch road, enter one via booster amplifier cascode pipe
After step amplification, flow back on the ground level of cobasis pipe of main amplifier, active feedback is formed, to improve the transmitting of main amplifier cobasis pipe
Voltage between level and ground level.
The present invention substantive distinguishing features be：
1st, it is defeated as the cascode level of trans-impedance amplifier using the Ge-Si heterojunction bipolar transistor (SiGe HBT) of high transconductance
Enter.Due to Ge-Si heterojunction bipolar transistor have it is bigger than MOS memory (MOSFET) it is effective across
Lead, thus input limit can be elapsed to high frequency direction, so as to be effectively isolated the influence of photodetector input capacitance.
2nd, main amplifier uses cascode structure.This structure not only has larger output impedance, and can be effective
Ground shields Miller capacitance, improves circuit overall bandwidth.
3rd, booster amplifier uses the cascode level amplifier in belt current source, using active feedback technology and main amplifier phase
Even, while lift main amplifier gain and reduce noise.
Have the beneficial effect that：
1st, because Ge-Si heterojunction bipolar transistor (SiGe HBT) has than metal-oxide field-effect transistor
(MOSFET) bigger effective mutual conductance, thus can be designed that gain bandwidth product is higher, noise system based on SiGe BiCMOS techniques
The lower amplifying circuit of number.
2nd, cascode amplifier can provide higher gain bandwidth product as main amplifier, can under identical gain
Obtain higher bandwidth.
3rd, the introducing of booster amplifier can significantly increase the equivalent transconductance of main amplifier tube, and the overall of boost amplifier increases across resistance
Benefit, reduce equivalent input noise current.
4th, the trans-impedance amplifier designed by the present invention and standard SiGe BiCMOS techniques are completely compatible, and high-performance can be achieved
Photoreceiver front-end and the single-chip integration of signal transacting rear end, so as to reduce cost, strengthen function.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of classical cascode trans-impedance amplifier.
Fig. 2 is the circuit theory diagrams of active feedback cascode trans-impedance amplifier.
Fig. 3 is the frequency response of active feedback cascode and classical cascode trans-impedance amplifier.
Fig. 4 is the noise current of active feedback cascode and classical cascode trans-impedance amplifier.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
Fig. 1 show the circuit theory diagrams of classical cascode trans-impedance amplifier.The circuit is by Ge-Si heterojunction bipolar
Transistor Q11And Q12, resistance R11And R12Form.Wherein, bipolar transistor Q11For cascode level, Q12For grounded base, VbFor grounded base
Bias voltage.The main function of the circuit is the low current signal for receiving photodetector output, and is converted, amplifies
For voltage signal.As the output current I of photodetectorPDAfter the input of trans-impedance amplifier flows into, amplify through cascode
After device amplification, voltage signal Vo is converted to, and export from output end.Cascode amplifier have two it is notable the advantages of：(1)
With larger output impedance, thus there is higher voltage gain；(2) influence of Miller effect can be reduced.Grounded base crystal
Pipe Q12With transistor Q11It is connected, can be regarded as loading, therefore transistor Q11Colelctor electrode on occur a very low impedance (1/
gmq12), this causes transistor Q11Basis set gain it is very small, thus reduce transistor Q11Miller between ground level and colelctor electrode
Electric capacity.Therefore, influence of the input capacitance to circuit can be substantially reduced using cascode structure, pushes input limit to high frequency,
So as to reach the purpose of spread bandwidth.
Trans-impedance amplifier is located at the front end of photoreceiver, and it not only plays a part of electric current and turns voltage, and to bandwidth,
Gain, noise and transient response have very important influence.Compared with traditional common-emitter configuration, cascode structure has more
High output resistance and transimpedance gain.If with IPDRepresent the input current of photodetector, CPDRepresent the equivalent of photodetector
Electric capacity, R11Feedback capacity is represented, then the low frequency transimpedance gain of cascode circuit and-three dB bandwidth can be expressed as
Although cascode structure has broader bandwidth, with the continuous improvement of data transmission bauds, in specific work
Under the conditions of skill, the bandwidth of classical cascode structure has been difficult to meet application request.Therefore, it is necessary to design new topology knot
Structure lifts its broadband.
Fig. 2 show the circuit theory diagrams of active feedback cascode trans-impedance amplifier proposed by the present invention.Tied with classics
Structure is compared, and the present invention introduces a horizontal magnification device A on the basis of classical cascode amplifiera, for further enhancing
Cascode effect.Introducing booster amplifier AaBefore, transistor Q22The voltage of ground level to emitting stage be-Vx, and introduce auxiliary
Help amplifier AaAfterwards, transistor Q22The voltage of ground level to emitting stage be Vy-Vx=-(Aa+1)Vx.Therefore, booster amplifier AaCan
By transistor Q22Effective be promoted to (A across resistancea+1)gmq22, so as to improve the output resistance of whole trans-impedance amplifier and direct current
Press gain.As can be seen here, if improve booster amplifier gain, just can further lift bandwidth, realize high bandwidth across resistance
Amplifier.I shown in Fig. 2 high order endsPDWith CPDThe photoelectric current and junction capacity of expression photodetector respectively, and right side circuit portion
It is divided into cascode trans-impedance amplifier.The trans-impedance amplifier mainly includes main amplifier and booster amplifier two parts：Crystal
Pipe Q21、Q22With resistance R22Form main amplifier；Transistor Q23And Q24Form booster amplifier, the equivalent photoelectricity of photodetector
Flow IPDWith transistor Q21Base stage and resistance R21It is connected, and resistance R21Another termination output end；Transistor Q21Current collection
Pole and transistor Q22Emitting stage and Q23Ground level be connected, transistor Q21Emitting stage ground connection；Transistor Q23Colelctor electrode connect crystalline substance
Body pipe Q22Ground level and transistor Q24Emitting stage be connected, and transistor Q23Emitting stage ground connection；Transistor Q24Ground level connect
Applying bias Vb, colelctor electrode connects power Vcc, and transistor Q22Colelctor electrode and resistance R22It is connected with output point, resistance R22It is another
One termination power Vcc.Booster amplifier AaIt is a cascode level amplifier using current source as load, by transistor Q23And Q24It is real
Existing, in one-stage amplifier, load is bigger, and voltage gain is bigger.Wherein, Q24For current source, it is as cascode level amplifier
Load, while resistance is increased, does not reduce the amplitude of oscillation of output voltage.
Using small-signal equivalent circuit, increasing across resistance for active feedback cascode circuit of the present invention can be derived
Benefit and-three dB bandwidth
Comparison expression (1)-(4) can be obtained, and compared with classical cascode trans-impedance amplifier, active feedback of the present invention is total to
Penetrating cobasis trans-impedance amplifier has higher voltage gain, and its bandwidth is also greater than conventional cascode trans-impedance amplifier.This
Outside, transistor Q22Effective mutual conductance lifting preferably shield Miller capacitance, thus further expanded bandwidth of operation.
Based on German 0.25 μm of SiGe BiCMOS technique of IHP, we have carried out emulation and excellent to circuit of the present invention
Change.Fig. 3 show the frequency response curve of active feedback cascode trans-impedance amplifier.In order to facilitate contrast, also provided in figure
The frequency response curve of classical cascode trans-impedance amplifier.As seen from the figure, classical cascode trans-impedance amplifier and active
Feed back cascode trans-impedance amplifier gain it is identical, but the gain of active feedback cascode trans-impedance amplifier in high frequency according to
It is old to keep stable, just begun to decline to 10GHz or so, and the gain of classical cascode amplifier is begun to down less than 5GHz
Drop.Therefore, active feedback cascode trans-impedance amplifier proposed by the present invention can obtain higher bandwidth.
Fig. 4 show classical and active feedback cascode trans-impedance amplifier equivalent input noise current spectrum density.It is low
During frequency, feedback resistance R22It is main noise source；During to high frequency, transistor Q22Account for the leading position of noise source.Due to negative
Carry transistor Q24Equivalent to a constant-current source, it is necessary to which mutual conductance minimizes, therefore less noise contribution is shown, this also causes this hair
Bright described active feedback cascode trans-impedance amplifier has more preferable noiseproof feature.
In summary, emulation and optimization through IHP SiGe BiCMOS techniques, active feedback cascode proposed by the present invention are total to
Base trans-impedance amplifier circuit can effectively expand bandwidth of operation, and equivalent input noise electricity on the premise of higher gain is ensured
Flow relatively low, therefore be expected to be used for high speed optical communication system.
Claims (1)
1. a kind of active feedback cascode trans-impedance amplifier based on SiGe BiCMOS, including current source and electric capacity, auxiliary are put
Big device and main amplifier, it is characterised in that booster amplifier and main amplifier use Ge-Si heterojunction bipolar transistor SiGe
The cascode level input that HBT is used as.Wherein,
Main amplifier uses cascode structure, and the current signal of input is converted into voltage signal, the bias voltage of cobasis pipe
There is provided by the output end of booster amplifier, finally export the voltage signal after changing, amplifying；
The current source output that provides photoelectric current in parallel with electric capacity, output end are connected with the ground level of main amplifier cascode pipe, the other end
Ground connection；
Booster amplifier uses load-carrying grounded emitter amplifier structure, its input terminate at main amplifier cascode pipe colelctor electrode and
On the emitting stage of cobasis pipe, where signal flows into booster amplifier on branch road, via further putting for booster amplifier cascode pipe
After big, flow back on the ground level of cobasis pipe of main amplifier, form active feedback, with improve the emitting stage of main amplifier cobasis pipe and
Voltage between ground level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710937100.0A CN107749743A (en) | 2017-10-10 | 2017-10-10 | Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710937100.0A CN107749743A (en) | 2017-10-10 | 2017-10-10 | Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107749743A true CN107749743A (en) | 2018-03-02 |
Family
ID=61255258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710937100.0A Pending CN107749743A (en) | 2017-10-10 | 2017-10-10 | Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107749743A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111277227A (en) * | 2020-03-18 | 2020-06-12 | 锐石创芯（深圳）科技有限公司 | Co-emitting and co-based amplifying circuit for improving phase characteristics and signal processing system |
| CN113746441A (en) * | 2021-07-13 | 2021-12-03 | 天津大学 | Broadband SiGe BiCMOS low noise amplifier |
| CN115021694A (en) * | 2022-05-10 | 2022-09-06 | 南方科技大学 | Large-output swing amplitude driving circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4096517A (en) * | 1975-11-25 | 1978-06-20 | Rca Corporation | Video amplifier |
| JPS57115007A (en) * | 1981-01-07 | 1982-07-17 | Nec Corp | Output buffer circuit |
| US20030184388A1 (en) * | 2002-03-26 | 2003-10-02 | Wilson Timothy M. | High bandwidth, low power, single stage cascode transimpedance amplifier for short haul optical links |
| CN103746667A (en) * | 2013-12-24 | 2014-04-23 | 北京时代民芯科技有限公司 | Low-noise broadband optical fiber trans-impedance amplifier |
| CN203691420U (en) * | 2013-12-20 | 2014-07-02 | 天津大学 | Photoelectric integrated receiver based on standard SiGe BiCMOS technology |
| US20140292413A1 (en) * | 2013-03-29 | 2014-10-02 | Electronics And Telecommunications Research Institute | Transimpedance pre-amplifier with improved bandwidth |
| CN104348432A (en) * | 2013-08-09 | 2015-02-11 | 成都国腾电子技术股份有限公司 | Single-converted-to-double low noise amplifier with highly balanced and stabilized differential output gain phase |
-
2017
- 2017-10-10 CN CN201710937100.0A patent/CN107749743A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4096517A (en) * | 1975-11-25 | 1978-06-20 | Rca Corporation | Video amplifier |
| JPS57115007A (en) * | 1981-01-07 | 1982-07-17 | Nec Corp | Output buffer circuit |
| US20030184388A1 (en) * | 2002-03-26 | 2003-10-02 | Wilson Timothy M. | High bandwidth, low power, single stage cascode transimpedance amplifier for short haul optical links |
| US20140292413A1 (en) * | 2013-03-29 | 2014-10-02 | Electronics And Telecommunications Research Institute | Transimpedance pre-amplifier with improved bandwidth |
| CN104348432A (en) * | 2013-08-09 | 2015-02-11 | 成都国腾电子技术股份有限公司 | Single-converted-to-double low noise amplifier with highly balanced and stabilized differential output gain phase |
| CN203691420U (en) * | 2013-12-20 | 2014-07-02 | 天津大学 | Photoelectric integrated receiver based on standard SiGe BiCMOS technology |
| CN103746667A (en) * | 2013-12-24 | 2014-04-23 | 北京时代民芯科技有限公司 | Low-noise broadband optical fiber trans-impedance amplifier |
Non-Patent Citations (2)
| Title |
|---|
| SONG QIWEI等: "Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects", 《OURNAL OF SEMICONDUCTORS》 * |
| 郭增笑等: "基于标准BiCMOS工艺的1.５Gbit/s调节型共源共栅光接收机", 《光电子•激光》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111277227A (en) * | 2020-03-18 | 2020-06-12 | 锐石创芯（深圳）科技有限公司 | Co-emitting and co-based amplifying circuit for improving phase characteristics and signal processing system |
| CN113746441A (en) * | 2021-07-13 | 2021-12-03 | 天津大学 | Broadband SiGe BiCMOS low noise amplifier |
| CN113746441B (en) * | 2021-07-13 | 2023-10-20 | 天津大学 | Broadband SiGe BiCMOS Low Noise Amplifier |
| CN115021694A (en) * | 2022-05-10 | 2022-09-06 | 南方科技大学 | Large-output swing amplitude driving circuit |
| CN115021694B (en) * | 2022-05-10 | 2024-05-14 | 南方科技大学 | Large-output swing driving circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102820857A (en) | Transimpedance amplifier with broad band and high gain, design method and amplifier chip | |
| US9641251B1 (en) | Transimpedance amplifier, and related integrated circuit and optical receiver | |
| CN103746667B (en) | A kind of Low-noise broadband optical fiber trans-impedance amplifier | |
| CN103701533B (en) | Based on the optoelectronic integration receiver of standard SiGe BiCMOS technique | |
| CN106027159A (en) | Analog front-end circuit for fully-differential optical receiver based on adjustable common-emitter common-base structure | |
| CN108880489A (en) | Power amplification circuit | |
| CN104270100B (en) | A kind of low-power consumption low-noise amplifier for strengthening technology using positive feedback technique and active transconductance | |
| CN104993876A (en) | High-speed CMOS monolithically integrated optical receiver with full bandwidth single-ended-to-differential | |
| Zohoori et al. | A CMOS, low-power current-mirror-based transimpedance amplifier for 10 Gbps optical communications | |
| CN106253856A (en) | A kind of high-gain, low noise just bias adjustment type cascade trans-impedance amplifier | |
| JP2001217657A (en) | Preamplifier for optical communication | |
| CN107749743A (en) | Active feedback cascode trans-impedance amplifier based on SiGe BiCMOS | |
| CN104767117B (en) | A kind of high-speed laser drive circuit | |
| JP2012257070A (en) | Transimpedance amplifier | |
| CN106487338A (en) | A kind of power amplifier of distributed three stacked structure of consideration Miller effect | |
| CN107846195A (en) | A kind of ultra-wideband microwave low-noise amplifier of the active multiple feedback of band | |
| CN109698723A (en) | A kind of fully integrated photoreceiver of silica-based high speed for chip chamber light network | |
| JPH01220904A (en) | Low noise high speed current or voltage amplifier | |
| CN109167579A (en) | A kind of efficient power amplifier of high-output power | |
| CN105471514A (en) | High-speed fully-differential noise reduction device for CMOS optical receivers | |
| CN203691420U (en) | Photoelectric integrated receiver based on standard SiGe BiCMOS technology | |
| CN110535534A (en) | Optical receiver front end and the method for receiving optical signal | |
| CN108599866A (en) | A kind of transmission rate 25Gbps high-speed light receivers | |
| CN110034737A (en) | Power amplification circuit | |
| US6590455B1 (en) | Common-base amplifier with high input overload and/or tunable transimpedance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180302 |