CN110995170B - High dynamic range transimpedance amplifier - Google Patents
High dynamic range transimpedance amplifier Download PDFInfo
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- CN110995170B CN110995170B CN201911357256.7A CN201911357256A CN110995170B CN 110995170 B CN110995170 B CN 110995170B CN 201911357256 A CN201911357256 A CN 201911357256A CN 110995170 B CN110995170 B CN 110995170B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a high dynamic range transimpedance amplifier, which comprises an amplifying circuit and a feedback circuit, wherein the amplifying circuit comprises a transistor Q1, a transistor Q2, a transistor Q3, an adjustable resistor R1, an adjustable resistor R2 and a current source, wherein the base electrode of the transistor Q1 is connected with an input signal IN, the emitter electrode of the transistor Q1 is grounded after passing through the adjustable resistor R1, the collector electrode of the transistor Q1 is connected with the emitter electrode of the transistor Q2, the collector electrode of the transistor Q2 is connected with a power supply VCC after passing through the adjustable resistor R2, the collector electrode of the transistor Q3 is connected with the power supply VCC, the emitter electrode of the transistor Q3 is grounded after passing through the current source, and the base electrode of the transistor Q3 is connected with the collector electrode of the transistor Q2 to output a signal OUT; the feedback circuit includes a resistor R3 and a transistor M1 arranged in parallel. The transimpedance amplifier provided by the invention can realize the regulation gain with high dynamic range, and can also ensure that the input impedance and the output common mode level are kept unchanged.
Description
Technical Field
The invention relates to the technical field of amplifiers, in particular to a transimpedance amplifier with a high dynamic range.
Background
Transimpedance amplifiers are critical devices in communication systems. Particularly in an optical communication system, a transimpedance amplifier is used as an important device of a receiving front end, and determines the sensitivity and linearity of the receiving end. With the explosive growth of information transmission quantity, the optical communication rate is continuously improved, and the modulation mode is also increasingly complex. The transimpedance amplifier of the receiving front end is required to realize high bandwidth and low noise, and meanwhile, the gain can be adjusted in a larger dynamic range, so that the linearity of the receiving front end is ensured.
However, the transimpedance amplifier in the prior art has a limited dynamic range of adjusting gain, cannot ensure linearity of the receiving front end, and has a large limitation.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a transimpedance amplifier with a high dynamic range, which can realize the adjustment gain with the high dynamic range and can also ensure that the input impedance and the output common mode level are kept unchanged.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a high dynamic range transimpedance amplifier comprising:
the amplifying circuit comprises a transistor Q1, a transistor Q2, a transistor Q3, an adjustable resistor R1, an adjustable resistor R2 and a current source Ibias, wherein the adjustable resistor R1 is connected with a first control signal gain_ctrl1, and the adjustable resistor R2 is connected with a second control signal gain_ctrl2;
the base electrode of the transistor Q1 is connected with an input signal IN, the emitter electrode of the transistor Q1 is grounded after passing through an adjustable resistor R1, the collector electrode of the transistor Q1 is connected with the emitter electrode of the transistor Q2, the collector electrode of the transistor Q2 is connected with a power supply VCC after passing through the adjustable resistor R2, the collector electrode of the transistor Q3 is connected with the power supply VCC, the emitter electrode of the transistor Q3 is grounded after passing through the current source Ibias, and the base electrode of the transistor Q3 is connected with the collector electrode of the transistor Q2 to output a signal OUT;
and the feedback circuit comprises a resistor R3 and a transistor M1 which are arranged in parallel, wherein the resistor R3 is connected between the base electrode of the transistor Q1 and the emitter electrode of the transistor Q3 in a bridging way, and the transistor M1 is connected with a third control signal gain_ctrl.
On the basis of the technical scheme, the amplifying circuit further comprises an inductor L1, wherein the inductor L1 is connected in series with the adjustable resistor R2 and then is connected between the voltage VCC and the collector of the transistor Q2.
On the basis of the above technical scheme, the base electrode of the transistor Q2 is connected to a Bias voltage bias_cas.
On the basis of the above technical solution, the transistor M1 is an NMOS transistor, and the gate of the transistor M1 is connected to the third control signal gain_ctrl.
On the basis of the technical scheme, the transimpedance amplifier further comprises a control circuit, wherein the input end of the control circuit is connected with a third control signal gain_ctrl1, and the two output ends of the control circuit are respectively connected with a first control signal gain_ctrl1 and a second control signal gain_ctrl2 and are used for adjusting the first control signal gain_ctrl1 and the second control signal gain_ctrl2 according to the third control signal gain_ctrl2.
On the basis of the technical scheme, the control circuit is specifically used for:
when the third control signal gain_ctrl1 increases, the first control signal gain_ctrl1 and the second control signal gain_ctrl2 are simultaneously reduced;
when the third control signal gain_ctrl1 decreases, the first control signal gain_ctrl1 and the second control signal gain_ctrl2 are increased at the same time.
On the basis of the technical scheme, the transistor Q1, the transistor Q2 and the transistor Q3 are triodes.
On the basis of the above technical scheme, the transistors Q1, Q2 and Q3 are NPN type triodes.
On the basis of the technical scheme, the adjustable resistor R1 and the adjustable resistor R2 are formed by combining fixed resistors and transistors.
Based on the above technical scheme, the transistor M1 is an NMOS transistor.
Compared with the prior art, the invention has the advantages that: according to the high dynamic range transimpedance amplifier, the Gain range is adjusted through the third control signal gain_ctrl, so that the Gain can be adjusted in the high dynamic range, and meanwhile, the input impedance and the output common mode level can be kept unchanged.
Drawings
FIG. 1 is a schematic diagram of a high dynamic range transimpedance amplifier according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a control circuit according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. It is noted that all of the figures are exemplary representations. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The invention will now be described in further detail by way of specific examples of embodiments in connection with the accompanying drawings.
Referring to fig. 1, an embodiment of the present invention provides a high dynamic range transimpedance amplifier comprising an amplifying circuit and a feedback circuit.
The amplifying circuit comprises a transistor Q1, a transistor Q2, a transistor Q3, an adjustable resistor R1, an adjustable resistor R2 and a current source Ibias, wherein the adjustable resistor R1 is connected with a first control signal gain_ctrl1, and the adjustable resistor R2 is connected with a second control signal gain_ctrl2; the base of the transistor Q1 is connected with an input signal IN, the emitter of the transistor Q1 is grounded after passing through an adjustable resistor R1, the collector of the transistor Q1 is connected with the emitter of the transistor Q2, the collector of the transistor Q2 is connected with a power supply VCC after passing through the adjustable resistor R2, the collector of the transistor Q3 is connected with the power supply VCC, the emitter of the transistor Q3 is grounded after passing through a current source Ibias, and the base of the transistor Q3 is connected with the collector of the transistor Q2 to output a signal OUT.
The feedback circuit comprises a resistor R3 and a transistor M1 which are arranged in parallel, wherein the resistor R3 is connected between the base electrode of the transistor Q1 and the emitter electrode of the transistor Q3 in a bridging mode, and the transistor M1 is connected with a third control signal gain_ctrl.
In the embodiment of the present invention, the transistor Q1 and the transistor Q2 form a cascode amplifying structure, where the amplifying circuit may also be referred to as a common emitter amplifying circuit, and the purpose of setting the adjustable resistor R1 is to change the current of the common emitter amplifying circuit by adjusting the resistance value of the adjustable resistor R1, and the purpose of setting the adjustable resistor R2 is to change the common mode level of the common emitter amplifying circuit by adjusting the resistance value of the adjustable resistor R2. In addition, in the embodiment of the invention, the transistor Q3 and the current source Ibias form a follower circuit.
Still further, in an embodiment of the present invention, the amplifying circuit further includes an inductor L1, where the inductor L1 is connected in series with the adjustable resistor R2 and then connected between the voltage VCC and the collector of the transistor Q2.
Specifically, in the embodiment of the present invention, the base of the transistor Q2 is connected to a Bias voltage bias_cas.
Preferably, in the embodiment of the present invention, the transistor M1 is an NMOS transistor, and a gate of the transistor M1 is connected to the third control signal gain_ctrl.
Referring to fig. 2, in an embodiment of the present invention, the transimpedance amplifier further includes a control circuit, an input end of the control circuit is connected to a third control signal gain_ctrl1, and two output ends of the control circuit are respectively connected to a first control signal gain_ctrl1 and a second control signal gain_ctrl2, for adjusting the first control signal gain_ctrl1 and the second control signal gain_ctrl2 according to the third control signal gain_ctrl1.
In an embodiment of the present invention, the control circuit is specifically configured to: when the third control signal gain_ctrl1 increases, the first control signal gain_ctrl1 and the second control signal gain_ctrl2 are simultaneously reduced; when the third control signal gain_ctrl1 decreases, the first control signal gain_ctrl1 and the second control signal gain_ctrl2 are increased at the same time.
The control circuit in the embodiment of the invention can be a conventional control circuit, can realize the functions, is not limited herein, and can be selected according to actual conditions.
Preferably, in the embodiment of the present invention, the transistors Q1, Q2 and Q3 are NPN transistors.
Further, in the embodiment of the present invention, the adjustable resistor R1 and the adjustable resistor R2 are both formed by combining a fixed resistor and a transistor, that is, the specific structure of the adjustable resistor R1 or the adjustable resistor R2 may be a combined structure similar to the resistor R3 and the transistor M1. More specifically, the adjustable resistor R1 and the adjustable resistor R2 are formed by connecting a fixed resistor and a transistor in parallel, and the first control signal gain_ctrl1 is connected to the gate of the transistor of the adjustable resistor R1.
Further, in the embodiment of the present invention, the transistor M1 is an NMOS transistor.
In the embodiment of the present invention, the third control signal gain_ctrl controls the gate voltage of the transistor M1, so that the source leakage current of the transistor M1 can be changed, thereby changing the feedback resistance and adjusting the Gain of the transimpedance amplifier; meanwhile, the control circuit generates a first control signal gain_ctrl1 and a second control signal gain_ctrl2 according to a third control signal gain_ctrl1, and the adjustable resistor R1 is controlled by the first control signal gain_ctrl1 so as to change the working current of the common emitter amplifying circuit, so that the input resistor is kept unchanged; the adjustable resistor R2 is controlled by the second control signal gain_ctrl2, so that the common mode level output by the common emitter amplifying circuit is kept unchanged, namely, the common emitter amplifying circuit is realized, and under the control of the first control signal gain_ctrl1 and the second control signal gain_ctrl2, the input impedance of the input end is kept unchanged, and the output common mode is also unchanged.
The working principle of the transimpedance amplifier with high dynamic range in the embodiment of the invention is as follows: when the input signal IN is too large, the Gain of the transimpedance amplifier needs to be reduced, and the third control signal gain_ctrl is increased, so that the source leakage current of the transistor M1 is reduced, and the feedback resistance is further reduced, namely the bottom circuit Gain is reduced; meanwhile, after the third control signal gain_ctrl1 is increased, the first control signal gain_ctrl1 and the second control signal gain_ctrl2 are reduced, when the first control signal gain_ctrl1 is reduced, the adjustable resistor R1 is increased, and when the second control signal gain_ctrl2 is reduced, the adjustable resistor R2 is increased, so that the input impedance of the transimpedance amplifier is kept unchanged, and meanwhile, the output common mode is also unchanged.
According to the high dynamic range transimpedance amplifier provided by the embodiment of the invention, the Gain range is adjusted by the third control signal gain_ctrl, so that the Gain adjustment in the high dynamic range can be realized, and meanwhile, the input impedance and the output common mode level can be kept unchanged.
It should be noted that, in the present patent application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. In the present patent application, if it is mentioned that an action is performed according to an element, it means that the action is performed at least according to the element, and two cases are included: the act is performed solely on the basis of the element and is performed on the basis of the element and other elements.
The invention is not limited to the embodiments described above, but a number of modifications and adaptations can be made by a person skilled in the art without departing from the principle of the invention, which modifications and adaptations are also considered to be within the scope of the invention. What is not described in detail in this specification is prior art known to those skilled in the art.
Claims (10)
1. A high dynamic range transimpedance amplifier comprising:
the amplifying circuit comprises a transistor Q1, a transistor Q2, a transistor Q3, an adjustable resistor R1, an adjustable resistor R2 and a current source Ibias, wherein the adjustable resistor R1 is connected with a first control signal gain_ctrl1, and the adjustable resistor R2 is connected with a second control signal gain_ctrl2;
the base electrode of the transistor Q1 is connected with an input signal IN, the emitter electrode of the transistor Q1 is grounded after passing through an adjustable resistor R1, the collector electrode of the transistor Q1 is connected with the emitter electrode of the transistor Q2, the collector electrode of the transistor Q2 is connected with a power supply VCC after passing through the adjustable resistor R2, the collector electrode of the transistor Q3 is connected with the power supply VCC, the emitter electrode of the transistor Q3 is grounded after passing through the current source Ibias, and the base electrode of the transistor Q3 is connected with the collector electrode of the transistor Q2 to output a signal OUT;
and the feedback circuit comprises a resistor R3 and a transistor M1 which are arranged in parallel, wherein the resistor R3 is connected between the base electrode of the transistor Q1 and the emitter electrode of the transistor Q3 in a bridging way, and the transistor M1 is connected with a third control signal gain_ctrl.
2. The high dynamic range transimpedance amplifier according to claim 1, wherein: the amplifying circuit further comprises an inductor L1, wherein the inductor L1 is connected in series with the adjustable resistor R2 and then is connected between the voltage VCC and the collector of the transistor Q2.
3. The high dynamic range transimpedance amplifier according to claim 1, wherein: the base of the transistor Q2 is connected to a Bias voltage bias_cas.
4. The high dynamic range transimpedance amplifier according to claim 1, wherein: the transistor M1 is an NMOS transistor, and a gate of the transistor M1 is connected to the third control signal gain_ctrl.
5. The high dynamic range transimpedance amplifier according to claim 1, wherein: the transimpedance amplifier further comprises a control circuit, wherein the input end of the control circuit is connected with a third control signal gain_ctrl1, and the two output ends of the control circuit are respectively connected with a first control signal gain_ctrl1 and a second control signal gain_ctrl2 and are used for adjusting the first control signal gain_ctrl1 and the second control signal gain_ctrl2 according to the third control signal gain_ctrl2.
6. The high dynamic range transimpedance amplifier according to claim 5, wherein the control circuit is specifically configured to:
when the third control signal gain_ctrl1 increases, the first control signal gain_ctrl1 and the second control signal gain_ctrl2 are simultaneously reduced;
when the third control signal gain_ctrl1 decreases, the first control signal gain_ctrl1 and the second control signal gain_ctrl2 are increased at the same time.
7. The high dynamic range transimpedance amplifier according to claim 1, wherein: the transistors Q1, Q2 and Q3 are triodes.
8. The high dynamic range transimpedance amplifier according to claim 7, wherein: the transistors Q1, Q2 and Q3 are NPN type triodes.
9. The high dynamic range transimpedance amplifier according to claim 1, wherein: the adjustable resistor R1 and the adjustable resistor R2 are formed by combining fixed resistors and transistors.
10. The high dynamic range transimpedance amplifier according to claim 1, wherein: the transistor M1 is an NMOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911357256.7A CN110995170B (en) | 2019-12-25 | 2019-12-25 | High dynamic range transimpedance amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911357256.7A CN110995170B (en) | 2019-12-25 | 2019-12-25 | High dynamic range transimpedance amplifier |
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| CN110995170A CN110995170A (en) | 2020-04-10 |
| CN110995170B true CN110995170B (en) | 2023-04-21 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4674093A (en) * | 1983-07-14 | 1987-06-16 | Telefunken Electronic Gmbh | Circuit arrangement for actuating semiconductor lasers |
| CN101697479A (en) * | 2009-10-30 | 2010-04-21 | 凌阳科技股份有限公司 | Adjustable grain low noise amplifier |
| JP2011091688A (en) * | 2009-10-23 | 2011-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Transimpedance amplifier |
| JP2012257070A (en) * | 2011-06-09 | 2012-12-27 | Nippon Telegr & Teleph Corp <Ntt> | Transimpedance amplifier |
| CN103973246A (en) * | 2014-04-04 | 2014-08-06 | 嘉兴禾润电子科技有限公司 | Low-noise transimpedance amplifier for optical receiver |
-
2019
- 2019-12-25 CN CN201911357256.7A patent/CN110995170B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4674093A (en) * | 1983-07-14 | 1987-06-16 | Telefunken Electronic Gmbh | Circuit arrangement for actuating semiconductor lasers |
| JP2011091688A (en) * | 2009-10-23 | 2011-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Transimpedance amplifier |
| CN101697479A (en) * | 2009-10-30 | 2010-04-21 | 凌阳科技股份有限公司 | Adjustable grain low noise amplifier |
| JP2012257070A (en) * | 2011-06-09 | 2012-12-27 | Nippon Telegr & Teleph Corp <Ntt> | Transimpedance amplifier |
| CN103973246A (en) * | 2014-04-04 | 2014-08-06 | 嘉兴禾润电子科技有限公司 | Low-noise transimpedance amplifier for optical receiver |
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| CN110995170A (en) | 2020-04-10 |
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