CN114094960A - MMIC microwave power amplifier and radio frequency front end module - Google Patents

MMIC microwave power amplifier and radio frequency front end module Download PDF

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Publication number
CN114094960A
CN114094960A CN202111344994.5A CN202111344994A CN114094960A CN 114094960 A CN114094960 A CN 114094960A CN 202111344994 A CN202111344994 A CN 202111344994A CN 114094960 A CN114094960 A CN 114094960A
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power
input
transmission line
balun
planar
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彭艳军
宣凯
郭嘉帅
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Shenzhen Volans Technology Co Ltd
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Shenzhen Volans Technology Co Ltd
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Priority to CN202111344994.5A priority Critical patent/CN114094960A/en
Publication of CN114094960A publication Critical patent/CN114094960A/en
Priority to PCT/CN2022/090598 priority patent/WO2023082565A1/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

The invention provides an MMIC microwave power amplifier, which comprises an input end; the input power divider is connected with the input end at the input end and used for converting an input signal into two paths of differential signals; the input end of the power amplification unit is respectively connected to the two outputs of the input power divider and used for performing power amplification on the two differential signals and outputting the two differential signals; the input of the power synthesis unit is respectively connected to the two paths of outputs of the power amplification unit and is used for realizing power synthesis of the two paths of differential signals amplified by the power amplification unit; the power synthesis unit is a planar delay line balun in a planar structure, and the planar delay line balun is manufactured by a planar circuit process; and the output end is connected to the output end of the power synthesis unit. The invention also provides a radio frequency front end module. Compared with the prior art, the MMIC microwave power amplifier and the radio frequency front-end module have the advantages of high output power, small volume, low cost and high reliability.

Description

MMIC microwave power amplifier and radio frequency front end module
Technical Field
The invention relates to the technical field of wireless communication, in particular to an MMIC microwave power amplifier and a radio frequency front-end module.
Background
In order to propagate a wireless communication signal over a communication distance, a radio/microwave power amplifier of a transmission link of a wireless communication system is used to amplify the transmission signal to a power level, which in turn drives an antenna to radiate the signal undistorted to a distance far enough to be detected by a receiving device. The larger the output power of the rf/Microwave power amplifier is, the longer the signal propagation distance is, however, the Microwave power amplifier designed by using Microwave Monolithic Integrated Circuit (MMIC) technology is limited by the physical characteristics of breakdown voltage, power density, etc. of the device, and the output power of a single device is limited. In order to obtain larger output power, a power synthesis method is adopted to carry out in-phase power synthesis on a multi-path microwave solid-state device, and the method is an effective method for obtaining high output microwave power and comprises the following steps: chip-level power synthesis, circuit-level power synthesis and space power synthesis. Since the space power synthesis technology is not suitable for manufacturing the MMIC process, chip-level power synthesis and circuit-level power synthesis are common methods for high-power MMIC microwave power amplifiers.
In the circuit level power synthesis technology, two or more power tube amplifiers are combined together through a power synthesizer to obtain larger output power. Its advantages are less mutual influence between power units, easy regulation and high matching performance. The most common microwave power circuit level synthesis mode in engineering is power synthesis of two paths of power signals, because in most applications, a wireless communication system requires that input and output of a microwave power amplifier are in a single-ended form, conversion from a single-ended signal to two paths of differential signals can be conveniently realized by adopting a balun, and the microwave power circuit level synthesis mode is simple in structure and easy to realize. The differential power amplifier not only has output power doubled compared with a single-ended amplifier, but also has strong anti-interference and anti-noise capabilities, is easy to be grounded and has even harmonic suppression capability, and the differential microwave power amplifier is widely used in MMIC circuit design.
However, the differential MMIC microwave power amplifier in the related art usually employs a coaxial transmission line transformer balun or a spiral transformer balun to realize the two-path power synthesis. The coaxial transmission line transformer balun uses a coaxial line, is a non-planar circuit process, and is not beneficial to product miniaturization. The currents in the coaxial cables are equal in magnitude and opposite in phase, so that although the output currents of the two output ends can be ensured to be equal, the output voltages are not necessarily equal, and the consistency and stability of the output power are also influenced; the insertion loss of the spiral balun is large, and in order to better transfer power, the primary coil and the secondary coil of the spiral balun are also connected with a plurality of off-chip passive elements in parallel or in series, which is disadvantageous to the overall cost, the supply of a product chain and the reliability.
Therefore, there is a need to provide a new power combining technique to design a high power MMIC microwave power amplifier and rf front-end module to solve the above-mentioned technical problems.
Disclosure of Invention
Aiming at the defects of the related technologies, the invention provides an MMIC microwave power amplifier and a radio frequency front-end module which have the advantages of high output power, small volume, low cost and high reliability.
In order to solve the above technical problem, an embodiment of the present invention provides an MMIC microwave power amplifier, which includes,
an input terminal for connecting a single-ended input signal;
the input of the input power divider is connected to the input end and used for receiving the input signal and converting the input signal into two paths of differential signals;
the input end of the power amplification unit is respectively connected to the two outputs of the input power divider and is used for respectively carrying out power amplification on the two differential signals and outputting the two differential signals;
the input of the power synthesis unit is respectively connected to the two outputs of the power amplification unit and is used for realizing power synthesis of the two paths of differential signals amplified by the power amplification unit and then outputting the two paths of differential signals; the power synthesis unit is a plane delay line balun in a plane structure, and the plane delay line balun is manufactured through a plane circuit process; and the number of the first and second groups,
an output connected to an output of the power combining unit.
Preferably, the planar delay line balun includes a first differential port, a second differential port, a first transmission line, a second transmission line and a common port, which are disposed on the same plane, and the second transmission line is disposed opposite to the first transmission line and spaced from the first transmission line; a first end of the first transmission line is connected with the first differential port, and a second end of the first transmission line is connected with the common port; a first end of the second transmission line is connected with the second differential port, and a second end of the second transmission line is connected with the common port; the first differential port and the second differential port are respectively connected to two paths of outputs of the power amplification unit; the length of the first transmission line is set to be a quarter wavelength, the length of the second transmission line is set to be a quarter three wavelength, and the line widths of the first transmission line and the second transmission line are the same.
Preferably, the impedances of the first differential port, the second differential port and the common port are all 50 ohms.
Preferably, the first transmission line is bent to form a plurality of n-shaped structures with downward openings, the n-shaped structures are arranged from left to right, and the opening ends are sequentially connected end to form a first linear structure; the second transmission line is buckled and is a plurality of ascending u type structures of opening, and is a plurality of the U type structure is arranged from a left side to the right side and the open end is end to end connection formation second linear type structure in proper order, and is a plurality of n type structure is with a plurality of the U type structure is just to setting up one by one.
Preferably, the width of the first linear structure along the top-down direction is one third of the width of the second linear structure along the top-down direction.
Preferably, the planar delay line balun further includes an impedance transition section, one end of the impedance transition section is connected to the second end of the first transmission line and the second end of the second transmission line, respectively, and the other end of the impedance transition section is connected to the common port.
Preferably, the input power divider is a second planar delay line balun in a planar structure, the second planar delay line balun is manufactured by a planar circuit process, and the structure of the second planar delay line balun is the same as that of the planar delay line balun; a common port of the second planar delay line balun is connected to the input end, and a first differential port of the second planar delay line balun and a second differential port of the second planar delay line balun are respectively connected to the input end of the power amplification unit.
Preferably, the input power divider comprises an on-chip spiral transformer balun and a second power amplifying unit; a first end of a primary coil of the on-chip spiral transformer balun is connected to the input end, and a second end of the primary coil is connected to the ground; two ends of a secondary coil of the on-chip spiral transformer balun are respectively used as two paths of outputs of the input power divider to be connected to the power amplification unit; the second power amplifying unit is connected in series between the input end and the first end of the primary coil.
Preferably, the input matching network is connected in series between the two outputs of the input power divider and the power amplifying unit, and the output matching network is connected in series between the two outputs of the power amplifying unit and the power synthesizing unit.
The embodiment of the invention also provides a radio frequency front-end module which comprises the MMIC microwave power amplifier provided by the embodiment of the invention.
Compared with the prior art, the input of the power synthesis unit of the MMIC microwave power amplifier is respectively connected to the two outputs of the power amplification unit, and the power synthesis unit is used for synthesizing the power of the two paths of differential signals amplified by the power amplification unit and outputting the synthesized power, so that the aim of high output power is fulfilled; the performance of the power synthesis unit is the key for ensuring the performance of the power amplifier, the power synthesis unit is set as the planar delay line balun in a planar structure, the planar delay line balun is manufactured through a planar circuit process, the structure is simple, the miniaturization of a product can be realized due to the small size of the planar delay line balun manufactured through the planar circuit process, meanwhile, the insertion loss of the planar delay line balun manufactured through the planar circuit process is small, better power transmission can be realized without additionally connecting a plurality of off-chip passive elements in parallel or in series, and the purposes of high power transmission reliability and consistency are achieved.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings:
fig. 1 is a schematic circuit diagram of an MMIC microwave power amplifier according to an embodiment of the present invention;
fig. 2 is a structure diagram of a planar delay line balun circuit of an MMIC microwave power amplifier according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of another MMIC microwave power amplifier according to an embodiment of the present invention;
fig. 4 is a block diagram of a radio frequency front end module according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. Directional phrases used herein, such as, for example, upper, lower, front, rear, left, right, inner, outer, lateral, and the like, refer only to the orientation of the appended drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Referring to fig. 1-2, fig. 1 is a schematic circuit diagram of an MMIC microwave power amplifier according to an embodiment of the present invention; fig. 2 is a structure diagram of a planar delay line balun circuit of an MMIC microwave power amplifier according to an embodiment of the present invention. The present invention provides an MMIC microwave power amplifier 100 comprising: the input end RFin, the input power divider 1, the power amplifying unit 2, the power combining unit 3 and the output end RFout.
And the input end RFin is used for connecting a single-ended input signal.
The input of the input power divider 1 is connected to the input terminal RFin, and is configured to receive the input signal and convert the input signal into two differential signals.
The input end of the power amplification unit 2 is connected to the two outputs of the input power divider 1, and is configured to amplify and output the two differential signals. The power amplifying unit 2 may be two sets of power amplifiers PA1 and PA2 respectively connected in series to the two paths of differential signals, or may be a power amplifying chip PADie, which is easy to understand and has the same function and purpose.
The input of the power synthesis unit 3 is respectively connected to the two outputs of the power amplification unit 2, and is used for synthesizing the power of the two paths of differential signals amplified by the power amplification unit 2 and outputting the synthesized power. Namely, the power synthesis unit 3 of the invention is a differential power amplification structure, thereby effectively doubling the output power of the single-ended input signal input by the input end RFin and then outputting the signal, realizing the purpose of high power output, having strong anti-interference and noise capabilities and even harmonic suppression capabilities.
In this embodiment, the power combining unit 3 is a planar delay line balun in a planar structure, and the planar delay line balun is manufactured by a planar circuit process. The performance of the power synthesis unit 3 is the key for ensuring the performance of the MMIC microwave power amplifier 100, the power synthesis unit 3 is set as the planar delay line balun in a planar structure, the structure is simple, the miniaturization of a product can be realized due to the small size of the planar delay line balun manufactured by a planar circuit process, meanwhile, the insertion loss of the planar delay line balun manufactured by the planar circuit process is small, better power transmission can be realized without additionally connecting a plurality of off-chip passive elements in parallel or in series, and the purposes of high power transmission reliability and consistency are achieved.
Specifically, the plane delay line balun comprises a first differential port P arranged on the same plane+A second differential port PA first transmission line 31, a second transmission line 32 opposite to the first transmission line 31 and spaced from each other, and a common port CM.
The first end A of the first transmission line 31 and the first differential port P+And the second end B of the first transmission line 31 is connected with the common port CM.
The first end C of the second transmission line 32 is connected to the second differential port 32, and the second end D of the second transmission line 34 is connected to the common port CM.
The first differential port P+And said second differential port PAre respectively connected to the two outputs of the power amplifying unit 2.
In this embodiment, the length of the first transmission line 31 is set to be a quarter wavelength, that is, the length from the first end a to the second end B of the first transmission line 31 is a quarter operating wavelength. The length of the second transmission line 32 is set to three-quarter wavelength, that is, the length from the first end C to the second end D of the second transmission line 32 is three-quarter wavelength, so as to realize the conversion with the phase difference of 180 degrees, and the line widths of the first transmission line 31 and the second transmission line 32 are the same. The microwave signals passing through the first transmission line 31 and the second transmission line 32 have a phase difference of 180 °.
In this embodiment, the first differential port P+Said second differential port PAnd the impedance of the common port CM is 50 ohms to facilitate direct connection to a 50 ohm system.
Preferably, the planar delay line balun further includes an impedance transition section 33, one end of the impedance transition section 33 is connected to the second end B of the first transmission line 31 and the second end D of the second transmission line 32, respectively, and the other end of the impedance transition section 33 is connected to the common port CM, so that a smooth transition from the impedances of the first transmission line 31 and the second transmission line 32 to the 50 ohm impedance of the common port CM is realized, and the reliability and the consistency of power transmission are further improved.
Specifically, in this embodiment, the first transmission line 31 is bent to form a plurality of n-type structures 311 with downward openings, and the plurality of n-type structures 311 are arranged from left to right (i.e. from the first end a to the second end B) and the open ends are sequentially connected end to form a first linear structure. The second transmission line 32 is bent to form a plurality of u-shaped structures 321 with upward openings, and the u-shaped structures 321 are arranged from left to right (i.e. from the first end C to the second end D) and the open ends are sequentially connected end to form a second linear structure. The n-type structures 311 and the u-type structures 321 are arranged opposite to each other. The structural symmetry ensures that the area occupied by the balun of the planar delay line is the minimum, thereby facilitating the miniaturization of products.
Wherein the first linear structure has a width L along a top-down direction (i.e. from E to B direction)1The width L of the second linear structure along the top-down direction (i.e. the direction from D to F)2One third of the total. The size proportion is set, so that the symmetry of the balun of the planar delay line is better, and the phase difference of the upper path and the lower path is ensured to be 180 degrees.
In this embodiment, the input power divider 1 may be preferably configured as a second planar delay line balun in a planar structure, the second planar delay line balun is manufactured by a planar circuit process, and the structure of the second planar delay line balun is the same as that of the planar delay line balun serving as the power combining unit 3, that is, the structure of the second planar delay line balun is also the same as that shown in fig. 3. Wherein a common port CM of the second planar delay line balun is connected to the input port RFin, and a first differential port of the second planar delay line balun outputs a signal P+And a second differential port P of the second planar delay line balunAre respectively connected to the input ends of the power amplifying units 2Such as being connected to the input terminals of two sets of power amplifiers respectively to achieve power amplification.
In this embodiment, an input matching network, that is, a first input matching network 411 and a second input matching network 412, are respectively connected in series between the two outputs of the input power divider 1 and the power amplifying unit 2, and an output matching network, that is, a first output matching network 413 and a second output matching network 414, are respectively connected in series between the two outputs of the power amplifying unit 2 and the power synthesizing unit 3, so as to implement impedance matching.
In the MMIC microwave power amplifier 100 of the present embodiment, the input signal is transmitted to the second plane delay balun of the power amplification unit 2 through the input terminal RFin, and is converted into the differential signal RFAnd RF+One of the differential signals RF-is input to the power amplifier PA1 of the power amplifying unit 2 through the first input matching network 411, and the other differential signal RF + is input to the power amplifier PA2 of the power amplifying unit 2 through the second input matching network 412 for amplification. The output signal of the power amplifier PA1 is connected to the input terminal (first differential port P) of the planar delay line balun as the power combining unit 3 via the first output matching network 413+). Likewise, the output signal of the power amplifier PA2 is connected to the input terminal (second differential port P) of the planar delay line balun as the power combining unit 3 via the second output matching network 414). The plane delay line balun realizes power synthesis of two paths of output differential signals of the power amplifier PA1 and the power amplifier PA2, and then outputs the power through the output end RFout.
The present invention further provides another embodiment, as shown in fig. 3, which is a schematic circuit diagram of another MMIC microwave power amplifier provided in the embodiment of the present invention. This embodiment is essentially the same as the embodiment shown in fig. 1-2, and its output still uses a planar delay balun as the power combining unit 303. The difference lies in the different input power splitter structures, specifically:
the input power divider 301 comprises an on-chip spiral transformer balun 3011 and a second power amplification unit PA 0; a first end of a primary coil of the on-chip spiral transformer balun 3011 is connected to the input end RFin, and a second end of the primary coil is connected to ground; two ends of the secondary coil of the on-chip spiral transformer balun 3011 are respectively connected to the power amplification unit 302 (i.e., the power amplifier PA1 and the power amplifier PA2) as two outputs of the input power divider 3011. The second power amplifying unit PA0 is connected in series between the input end RFin and the first end of the primary coil to form an inter-stage differential conversion planar delay line balun structure MMIC microwave power amplifier.
In this embodiment, a radio frequency input signal is amplified by the second power amplifier PA0 with a first-stage single-ended structure, and then is connected to the on-chip spiral transformer balun 3011, so as to implement conversion from a single-ended signal to a differential signal, and after the converted differential signal drives the power amplification unit 302 (i.e., the power amplifier PA1 and the power amplifier PA2), an output signal thereof implements power synthesis through the off-chip power synthesis unit 303. The output gain is reduced under the influence of the lower Q value of the on-chip spiral transformer balun 3011, and when a high-gain radio-frequency power amplifier is realized, the gain of the driving stage is improved by adding a first-stage second power amplifier PA 0.
Except for the above differences, other structures, operation principles and achieved technical effects are the same as those of the embodiment shown in fig. 1-2, and are not described herein again.
The embodiment of the present invention further provides a radio frequency front end module, as shown in fig. four, which includes the MMIC microwave power amplifier PA, the Filter, the radio frequency switch SW, and the low noise amplifier LNA provided in the embodiment of the present invention.
Compared with the prior art, in the MMIC microwave power amplifier and the radio frequency front-end module, the input of the power synthesis unit of the MMIC microwave power amplifier is respectively connected to the two outputs of the power amplification unit, and the power synthesis unit is used for synthesizing the power of the two paths of differential signals amplified by the power amplification unit and outputting the two paths of differential signals, so that the aim of high output power is fulfilled; the performance of the power synthesis unit is the key for ensuring the performance of the power amplifier, the power synthesis unit is set as the planar delay line balun in a planar structure, the planar delay line balun is manufactured through a planar circuit process, the structure is simple, the miniaturization of a product can be realized due to the small size of the planar delay line balun manufactured through the planar circuit process, meanwhile, the insertion loss of the planar delay line balun manufactured through the planar circuit process is small, better power transmission can be realized without additionally connecting a plurality of off-chip passive elements in parallel or in series, and the purposes of high power transmission reliability and consistency are achieved.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.

Claims (10)

1. An MMIC microwave power amplifier is characterized by comprising,
an input terminal for connecting a single-ended input signal;
the input of the input power divider is connected to the input end and used for receiving the input signal and converting the input signal into two paths of differential signals;
the input end of the power amplification unit is respectively connected to the two outputs of the input power divider and is used for respectively carrying out power amplification on the two differential signals and outputting the two differential signals;
the input of the power synthesis unit is respectively connected to the two outputs of the power amplification unit and is used for realizing power synthesis of the two paths of differential signals amplified by the power amplification unit and then outputting the two paths of differential signals; the power synthesis unit is a plane delay line balun in a plane structure, and the plane delay line balun is manufactured through a plane circuit process; and an output terminal connected to an output of the power combining unit.
2. The MMIC microwave power amplifier of claim 1, wherein the planar delay line balun includes a first differential port, a second differential port, a first transmission line, a second transmission line opposite to the first transmission line and spaced apart from each other, and a common port disposed in a same plane; a first end of the first transmission line is connected with the first differential port, and a second end of the first transmission line is connected with the common port; a first end of the second transmission line is connected with the second differential port, and a second end of the second transmission line is connected with the common port; the first differential port and the second differential port are respectively connected to two paths of outputs of the power amplification unit; the length of the first transmission line is set to be one quarter of working wavelength, the length of the second transmission line is set to be three quarters of working wavelength, and the line widths of the first transmission line and the second transmission line are the same.
3. The MMIC microwave power amplifier of claim 2, wherein the impedances of the first differential port, the second differential port, and the common port are all 50 ohms.
4. The MMIC microwave power amplifier according to claim 2, wherein the first transmission line is bent into a plurality of n-type structures with downward openings, and the plurality of n-type structures are arranged from left to right with open ends connected end to end in sequence to form a first linear structure; the second transmission line is buckled and is a plurality of ascending u type structures of opening, and is a plurality of the U type structure is arranged from a left side to the right side and the open end is end to end connection formation second linear type structure in proper order, and is a plurality of n type structure is with a plurality of the U type structure is just to setting up one by one.
5. The MMIC microwave power amplifier according to claim 4, characterized in that the width of the first rectilinear structure in the top-down direction is one third of the width of the second rectilinear structure in the top-down direction.
6. The MMIC microwave power amplifier of claim 2, wherein the planar delay line balun further comprises an impedance transition, one end of the impedance transition being connected to the second end of the first transmission line and the second end of the second transmission line, respectively, and the other end of the impedance transition being connected to the common port.
7. The MMIC microwave power amplifier according to any one of claims 2 to 6, wherein the input power divider is a second planar delay line balun in a planar structure, the second planar delay line balun is manufactured by a planar circuit process, and the structure of the second planar delay line balun is the same as that of the planar delay line balun; a common port of the second planar delay line balun is connected to the input end, and a first differential port of the second planar delay line balun and a second differential port of the second planar delay line balun are respectively connected to the input end of the power amplification unit.
8. MMIC microwave power amplifier according to any of the claims 1-6, characterized in that the input power splitter comprises an on-chip spiral transformer balun and a second power amplifying unit; a first end of a primary coil of the on-chip spiral transformer balun is connected to the input end, and a second end of the primary coil is connected to the ground; two ends of a secondary coil of the on-chip spiral transformer balun are respectively used as two paths of outputs of the input power divider to be connected to the power amplification unit; the second power amplifying unit is connected in series between the input end and the first end of the primary coil.
9. The MMIC microwave power amplifier of claim 1, wherein the input matching networks are respectively connected in series between the outputs of the input power splitter and the power amplifying unit, and the output matching networks are respectively connected in series between the outputs of the power amplifying unit and the power combining unit.
10. A radio frequency front end module, comprising a MMIC microwave power amplifier according to any one of claims 1-9.
CN202111344994.5A 2021-11-12 2021-11-12 MMIC microwave power amplifier and radio frequency front end module Pending CN114094960A (en)

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PCT/CN2022/090598 WO2023082565A1 (en) 2021-11-12 2022-04-29 Mmic microwave power amplifier and radio frequency front-end module

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CN115549611A (en) * 2022-09-02 2022-12-30 佛山臻智微芯科技有限公司 Integrated out-of-phase radio frequency power amplifying circuit based on multi-path power synthesis
WO2023082565A1 (en) * 2021-11-12 2023-05-19 深圳飞骧科技股份有限公司 Mmic microwave power amplifier and radio frequency front-end module

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