CN110324015A - A kind of active transformation synthesis power amplifier of high power distribution type - Google Patents
A kind of active transformation synthesis power amplifier of high power distribution type Download PDFInfo
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- CN110324015A CN110324015A CN201910684507.6A CN201910684507A CN110324015A CN 110324015 A CN110324015 A CN 110324015A CN 201910684507 A CN201910684507 A CN 201910684507A CN 110324015 A CN110324015 A CN 110324015A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a kind of active transformation synthesis power amplifiers of high power distribution type, and including inputting single-ended transfer difference matching network, the first difference three stacks amplification network, the second difference three stacking amplifies network, the stacking amplification of third difference three network, the 4th difference three stack and amplify network, distributed impedances match transformation network and match the first to fourth power supply biasing networks that transformation network is connected with distributed impedances.Core architecture of the present invention stacks amplification network using first to fourth difference three, utilize the good parasitic parameter inhibition of difference amplifier, three stacked transistors high power gains, high-isolation and high-output power characteristic are utilized simultaneously, it is combined with the distributed impedances matching good power combing characteristic of transformation network, so that entire power amplifier obtains good high-gain, high efficiency and high-power output ability.
Description
Technical field
The present invention relates to field effect transistor radio-frequency power amplifier and integrated circuit fields, especially for frequency microwave
A kind of active transformation of high power distribution type of the transmitting module application of transceiver end synthesizes power amplifier.
Background technique
With the fast development of wireless communication system and radio frequency microwave circuit, radio frequency front-end transceiver is also to high-performance, height
Integrated, low-power consumption direction is developed.Therefore the radio frequency of the urgent demand transmitter in market has high defeated with microwave power amplifier
The performances such as power, high-gain, high efficiency, low cost out, and integrated circuit is exactly the key technology for being expected to meet the market demand.
However, when realizing radio frequency and microwave power amplifier chip circuit using integrated circuit technology design, performance
Certain restriction is received with cost, major embodiment:
(1) high power, high efficiency ability are limited: conventional power amplifier uses multiway combination in parallel structure, or divides
The combined coefficient of cloth structure, both structures is limited, causes a part of power loss in synthesis network, limits Gao Gong
Rate, high efficiency ability.
(2) low-power consumption, plus and blowup ability are limited: the power amplifier of the single-ended common source transistors of tradition is by transistor
The influence of parasitic parameter, in high-frequency work, gain is lower, while power capability is significantly limited, realize the difficulty of low-power consumption compared with
Greatly.
The circuit structure of common high-gain, high power amplifier has very much, and most typically multistage, multichannel synthesizes single-ended
Power amplifier, still, conventional multi-level, multichannel synthesize single-ended power amplifier to meet simultaneously parameters requirement it is very tired
Difficulty is primarily due to:
Output impedance when 1. conventional multi-level, multichannel synthesize single-ended power amplifier using multiway combination in parallel structure compared with
It is low, therefore the impedance matching that synthesis network needs to realize high impedance conversion ratio is exported, the increasing for sacrificing amplifier is generally required in this way
Benefit reduces power, therefore limits high power, high efficiency ability.
2. conventional multi-level, multichannel synthesize in single-ended power amplifier, in order to improve the shadow that amplifier gain improves isolation
It rings, also has using Cascode transistor enlarged structure, but although Cascode transistor increases circuit isolation, but can not
The trend that gain significantly deteriorates with frequency also cannot achieve the optimum impedance matching between Cascode pair transistor, reduce output
Power characteristic.
It can thus be seen that high-gain, high power amplifier design difficulty based on integrated circuit technology are as follows: high power,
It is larger that high efficiency exports difficulty；There are many offices for the multichannel composite structure of traditional single transistor structure or Cascode transistor
It is sex-limited.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of active transformations of high power distribution type to synthesize power amplifier,
There is the advantages of combining transistor stack technology, distribution transformer synthetic technology high-power output ability, high power to increase
It is beneficial, it is good input, output matching properties, and it is at low cost the advantages that.
The technical scheme to solve the above technical problems is that a kind of active transformation of high power distribution type synthesizes power
Amplifier, including input single-ended transfer difference matching network, the first difference three stack amplification network, the second difference three stacks amplification net
Network, third difference three stack amplification network, the 4th difference three stack amplification network, distributed impedances matching transformation network and with
Distributed impedances match the first to fourth power supply biasing networks that transformation network is connected；
The input terminal of the input single-ended transfer difference matching network is the input terminal of the entire power amplifier, first
The first input end that output end stacks amplification network with first to fourth difference three simultaneously is connect, and second output terminal is simultaneously
The second input terminal for stacking amplification network with first to fourth difference three is connect；
First difference three stacks the first output end of amplification network and second output terminal is hindered with the distribution respectively
The first input end of anti-matching transformation network and the connection of the second input terminal；The first of the stacking of the second difference three amplification network is defeated
Outlet and second output terminal are connect with the third input terminal of distributed impedances matching transformation network and the 4th input terminal respectively；
The third difference three stacks the first output end of amplification network and second output terminal matches change with the distributed impedances respectively
5th input terminal of pressure network network and the connection of the 6th input terminal；4th difference three stacks the first output end and the of amplification network
Two output ends are connect with the 7th input terminal of distributed impedances matching transformation network and the 8th input terminal respectively；
The output end of the first to fourth power supply biasing networks respectively with the 9th of the distribution transformer network to
The connection of 12nd input terminal；
The output end of the distributed impedances matching transformation network is the output end of the entire power amplifier.
Further, the input terminal for inputting single-ended transfer difference matching network connects ground capacity Ci1With capacitance Ci2, electricity
Hold Ci2The other end connect transformer TinPrimary coil Same Name of Ends, TinPrimary coil non-same polarity ground connection；Transformer
TinSecondary coil Same Name of Ends connect blocking matching capacitance Ci3, capacitor Ci3The other end connection input single-ended transfer difference matching
The first output end and biasing resistor R of networki1With ground resistance Ri2, biasing resistor Ri1The other end connect bias voltage Vb, become
Depressor TinSecondary coil non-same polarity connect blocking matching capacitance Ci4, capacitor Ci4Other end connection input single-ended slip
Divide the second output terminal of matching network.
The beneficial effect of above-mentioned further scheme is: the input single-ended transfer difference matching network that the present invention uses is real in addition to energy
The single-ended signal slip of existing input radio frequency signal is exceptionally, moreover it is possible to carry out impedance matching to radio-frequency input signals and improve the steady of circuit
It is qualitative, while circuit structure is simple, insertion loss is low.
Further, N difference three, which stacks, passes through inductance L between the first input end and the second input terminal of amplification networksj
And LpjConnection, first input end connect field effect transistor MsjGrid, the second input terminal connect field effect transistor MpjGrid
Pole, field effect transistor MsjAnd MpjSource electrode ground connection, field effect transistor MsjDrain electrode connect field effect transistor MtjSource
Pole, field effect transistor MtjDrain electrode connect field effect transistor MrjSource electrode, field effect transistor MtjGrid connect ground connection
Capacitor CtjWith resistance Rtj, resistance RtjThe other end connect ground resistance RsjWith resistance Rfj, resistance RfjThe other end connect resistance
RrjWith resistance Rdj, resistance RrjThe other end connect field effect transistor MrjGrid, resistance RdjThe other end connect field-effect
Transistor MrjDrain electrode, field effect transistor MrjGrid be also connected with ground capacity Crj；Field effect transistor MpjDrain electrode connection
Field effect transistor MqjSource electrode, field effect transistor MqjDrain electrode connect field effect transistor MojSource electrode, field effect transistor
Pipe MqjGrid connect ground capacity CqjWith resistance Rqj, resistance RqjThe other end connect ground resistance RpjWith resistance Rmj, resistance
RmjThe other end connect resistance RojWith resistance Rnj, resistance RojThe other end connect field effect transistor MojGrid, resistance Rnj
The other end connect field effect transistor MojDrain electrode, field effect transistor MojGrid be also connected with ground capacity Coj, field-effect
Transistor MrjAnd field effect transistor MojDrain electrode pass through capacitor CdjConnection, field effect transistor MrjDrain electrode connect N difference
Three stack the first output end of amplification network, field effect transistor MojDrain electrode connection N difference three stack the of amplification network
Two output ends, wherein N mono-, two, three and four, j=1,2,3 and 4.
The beneficial effect of above-mentioned further scheme is: the difference three that the present invention uses stacks amplification network and can be obviously improved
The gain of power amplifier and power capacity, while reducing equivalent output capacitance and expanding amplifier bandwidth, while three stackeds
Difference amplifier has the characteristic for preferably inhibiting high-frequency parasitic parameter compared with traditional transistor stack structure, therefore
The high-frequency work characteristic of amplifier can be improved.
Further, distributed impedances matching transformation network includes the transformer T successively coupled1、T2、T3And T4, transformer
T1Primary coil Same Name of Ends connect transformer T2The first primary coil non-same polarity, transformer T2The second primary line
The Same Name of Ends of circle connects transformer T3Grade coil non-same polarity, transformer T3Primary coil Same Name of Ends connect transformer
T4Primary coil non-same polarity, transformer T4Primary coil Same Name of Ends connect transformer T1Primary coil it is non-same
Name end, while transformer T2The first primary coil Same Name of Ends connection distributed impedances matching transformation network output end and connect
Ground capacitor Cout, transformer T2The second primary coil non-same polarity ground connection；Transformer T1Secondary coil non-same polarity and
Same Name of Ends is separately connected the second input terminal, the third input terminal of distributed impedances matching transformation network, transformer T2Secondary wire
The non-same polarity and Same Name of Ends of circle are separately connected the 4th input terminal, the 5th input terminal of distributed impedances matching transformation network, become
Depressor T3Secondary coil non-same polarity and Same Name of Ends be separately connected distributed impedances matching transformation network the 6th input terminal,
7th input terminal, transformer T4Secondary coil non-same polarity and Same Name of Ends be separately connected distributed impedances matching transformation network
The 8th input terminal, first input end, transformer T1、T2、T3And T4The centre tap point of secondary coil be separately connected distribution
9th to the 12nd input terminal of impedance matching transformation network.
The beneficial effect of above-mentioned further scheme is: the distributed impedances matching transformation network that the present invention uses is in addition to energy is real
The difference of existing four road difference radio-frequency signals turns single-ended function, can also efficiently realize power combing and the resistance of four tunnel radiofrequency signals
Anti- matching greatly improves the power capacity and efficiency of power amplifier.
Further, the output end of first to fourth power supply biasing networks connects inductance Lcj, inductance LcjThe other end connection
Bias voltage VdWith ground capacity Cj, wherein j=1,2,3 and 4.
The beneficial effect of above-mentioned further scheme is: the power supply biasing networks that the present invention uses can be realized to this amplifier
Good drain electrode power supply, inhibits low frequency spur and self-excitation.
Detailed description of the invention
Fig. 1 is power amplifier functional block diagram of the present invention；
Fig. 2 is power amplifier circuit figure of the present invention.
Specific embodiment
Carry out detailed description of the present invention illustrative embodiments with reference to the drawings.It should be appreciated that shown in attached drawing and
The embodiment of description is only exemplary, it is intended that is illustrated the principle and spirit of the invention, and is not limited model of the invention
It encloses.
The embodiment of the invention provides a kind of active transformations of high power distribution type to synthesize power amplifier, including inputs single-ended
Slip divides matching network, the first difference three to stack amplification network, the second difference three stacks amplification network, three heap of third difference stacks
Big network, the 4th difference three stack amplification network, distributed transformation appliance network and are connected with distributed transformation appliance network
First to fourth power supply biasing networks.
As shown in Figure 1, the input terminal of input single-ended transfer difference matching network is the input terminal of entire power amplifier, the
One output end simultaneously with first to fourth difference three stack amplification network first input end connect, second output terminal at the same with
First to fourth difference three stacks the second input terminal connection of amplification network；
First difference three stacks the first output end of amplification network and second output terminal matches change with distributed impedances respectively
The first input end of pressure network network and the connection of the second input terminal；Second difference three stacks the first output end of amplification network and second defeated
Outlet is connect with the third input terminal of distributed impedances matching transformation network and the 4th input terminal respectively；Three heap of third difference stacks
The first output end and second output terminal of big network match the 5th input terminal and the 6th of transformation network with distributed impedances respectively
Input terminal connection；4th difference three stacks the first output end of amplification network and second output terminal is matched with distributed impedances respectively
7th input terminal of transformation network and the connection of the 8th input terminal.
First to fourth power supply biasing networks are connect with the 9th to the 12nd input terminal of distribution transformer network respectively.
As shown in Fig. 2, the input terminal of input single-ended transfer difference matching network connects ground capacity Ci1With capacitance Ci2,
Capacitor Ci2The other end connect transformer TinPrimary coil Same Name of Ends, TinPrimary coil non-same polarity ground connection；Transformation
Device TinSecondary coil Same Name of Ends connect blocking matching capacitance Ci3, capacitor Ci3The other end connection input single-ended transfer difference
The first output end and biasing resistor R of distribution networki1With ground resistance Ri2, biasing resistor Ri1The other end connect bias voltage Vb,
Transformer TinSecondary coil non-same polarity connect blocking matching capacitance Ci4, capacitor Ci4The other end connection input single-ended turn
The second output terminal of difference matching network.
N difference three, which stacks, passes through inductance L between the first input end and the second input terminal of amplification networksjAnd LpjConnection,
First input end connects field effect transistor MsjGrid, the second input terminal connect field effect transistor MpjGrid, field-effect
Transistor MsjAnd MpjSource electrode ground connection, field effect transistor MsjDrain electrode connect field effect transistor MtjSource electrode, field-effect is brilliant
Body pipe MtjDrain electrode connect field effect transistor MrjSource electrode, field effect transistor MtjGrid connect ground capacity CtjAnd electricity
Hinder Rtj, resistance RtjThe other end connect ground resistance RsjWith resistance Rfj, resistance RfjThe other end connect resistance RrjWith resistance Rdj,
Resistance RrjThe other end connect field effect transistor MrjGrid, resistance RdjThe other end connect field effect transistor MrjLeakage
Pole, field effect transistor MrjGrid be also connected with ground capacity Crj；Field effect transistor MpjDrain electrode connect field effect transistor
MqjSource electrode, field effect transistor MqjDrain electrode connect field effect transistor MojSource electrode, field effect transistor MqjGrid connect
Meet ground capacity CqjWith resistance Rqj, resistance RqjThe other end connect ground resistance RpjWith resistance Rmj, resistance RmjThe other end connect
Connecting resistance RojWith resistance Rnj, resistance RojThe other end connect field effect transistor MojGrid, resistance RnjThe other end connection
Field effect transistor MojDrain electrode, field effect transistor MojGrid be also connected with ground capacity Coj, field effect transistor MrjThe field and
Effect transistor MojDrain electrode pass through capacitor CdjConnection, field effect transistor MrjDrain electrode connection N difference three stack amplification net
First output end of network, field effect transistor MojDrain electrode connection N difference three stack amplification network second output terminal,
In, N mono-, two, three and four, j=1,2,3 and 4.
It includes the transformer T successively coupled that distributed impedances, which match transformation network,1、T2、T3And T4, transformer T1Primary line
The Same Name of Ends of circle connects transformer T2The first primary coil non-same polarity, transformer T2The second primary coil Same Name of Ends
Connect transformer T3Grade coil non-same polarity, transformer T3Primary coil Same Name of Ends connect transformer T4Primary line
The non-same polarity of circle, transformer T4Primary coil Same Name of Ends connect transformer T1Primary coil non-same polarity, same to time-varying
Depressor T2The first primary coil Same Name of Ends connection distributed impedances matching transformation network output end and ground capacity Cout,
Transformer T2The second primary coil non-same polarity ground connection；Transformer T1Secondary coil non-same polarity and Same Name of Ends difference
Connect the second input terminal, the third input terminal of distributed impedances matching transformation network, transformer T2Secondary coil it is non-of the same name
End and Same Name of Ends are separately connected the 4th input terminal, the 5th input terminal of distributed impedances matching transformation network, transformer T3Time
The non-same polarity and Same Name of Ends of grade coil are separately connected the 6th input terminal of distributed impedances matching transformation network, the 7th input
End, transformer T4Secondary coil non-same polarity and Same Name of Ends be separately connected the 8th defeated of distributed impedances matching transformation network
Enter end, first input end, transformer T1、T2、T3、T4Secondary coil centre tap point be separately connected distributed impedances matching
9th to the 12nd input terminal of transformation network.
The output end of first to fourth power supply biasing networks connects inductance Lcj, inductance LcjThe other end connect bias voltage Vd
With ground capacity Cj, wherein j=1,2,3 and 4.
Concrete operating principle and process of the invention are introduced below with reference to Fig. 2:
Radio-frequency input signals enters circuit by input terminal RFin, carries out impedance by input single-ended transfer difference matching network
After Transformation Matching, enter the first input end that first to fourth difference three stacks amplification network simultaneously in the form of differential signal
(Vg+) and the second input terminal (Vg-) it, is stacked after difference amplifiers carry out power amplifications by three, it is same in the form of differential signal
When from first to fourth difference three stack amplification network the first output end and second output terminal output, using distributed impedances
After matching transformation network, by four road differential signals synthesize all the way single-ended signal from output end RFOUTOutput.
Analyzed based on foregoing circuit, the active transformation synthesis power amplifier of a kind of high power distribution type proposed by the present invention with
The previous amplifier architecture based on integrated circuit technology is the difference is that core architecture uses three stacked differential amplifications
Network:
Three stacked difference amplifiers are very different in structure with traditional one-transistor, are not repeated herein；
Three stacked difference amplifiers and Cascode difference amplifier the difference is that: Cascode transistor is total to
The piled grids compensating electric capacity of bank tube is the biggish capacitor of capacitance, for realizing the AC earth of grid, and stacked amplifier
In the compensating electric capacity of total bank tube of stacked structure be the lesser capacitor of capacitance, for realizing the synchronous hunting of grid voltage.
In a kind of entire active transformation synthesis power amplifier circuit of high power distribution type, the size of transistor and other
Resistance, compensating electric capacity size be to determine after the indices such as the gain for comprehensively considering entire circuit, bandwidth and output power,
By the layout design and rational deployment in later period, required indices can be better achieved, realize in high-power output
Ability, high power gain, good input and output matching properties.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of active transformation of high power distribution type synthesizes power amplifier, which is characterized in that including inputting single-ended transfer difference
Distribution network, the first difference three stack amplification network, the second difference three stacks amplification network, third difference three stacks amplification network,
4th difference three stacks amplification network, distributed impedances matching transformation network and is connected with distributed impedances matching transformation network
First to fourth power supply biasing networks；
The input terminal of the input single-ended transfer difference matching network is the input terminal of the entire power amplifier, the first output
End simultaneously with first to fourth difference three stack amplification network first input end connect, second output terminal at the same with institute
State the second input terminal connection that first to fourth difference three stacks amplification network；
First difference three stack amplification network the first output end and second output terminal respectively with the distributed impedances
The first input end of distribution transforming pressure network network and the connection of the second input terminal；Second difference three stacks the first output end of amplification network
It is connect respectively with the third input terminal of distributed impedances matching transformation network and the 4th input terminal with second output terminal；It is described
Third difference three stacks the first output end of amplification network and second output terminal matches transformation net with the distributed impedances respectively
5th input terminal of network and the connection of the 6th input terminal；4th difference three stacks the first output end of amplification network and second defeated
Outlet is connect with the 7th input terminal of distributed impedances matching transformation network and the 8th input terminal respectively；
It is described first to fourth power supply biasing networks output end respectively with the distribution transformer network the 9th to the tenth
The connection of two input terminals；
The output end of the distributed impedances matching transformation network is the output end of the entire power amplifier.
2. the active transformation of a kind of high power distribution type according to claim 1 synthesizes power amplifier, which is characterized in that institute
State the input terminal connection ground capacity C of input single-ended transfer difference matching networki1With capacitance Ci2, capacitor Ci2The other end connect
Meet transformer TinPrimary coil Same Name of Ends, TinPrimary coil non-same polarity ground connection；Transformer TinSecondary coil
Same Name of Ends connects blocking matching capacitance Ci3, capacitor Ci3The other end connect it is described input single-ended transfer difference matching network first
Output end and biasing resistor Ri1With ground resistance Ri2, biasing resistor Ri1The other end connect bias voltage Vb, transformer TinTime
The non-same polarity of grade coil connects blocking matching capacitance Ci4, capacitor Ci4The other end connect the input single-ended transfer difference and match
The second output terminal of network.
3. the active transformation of a kind of high power distribution type according to claim 1 synthesizes power amplifier, which is characterized in that institute
N difference three is stated to stack between the first input end and the second input terminal of amplification network through inductance LsjAnd LpjConnection, first is defeated
Enter end connection field effect transistor MsjGrid, the second input terminal connect field effect transistor MpjGrid, field effect transistor
MsjAnd MpjSource electrode ground connection, field effect transistor MsjDrain electrode connect field effect transistor MtjSource electrode, field effect transistor
MtjDrain electrode connect field effect transistor MrjSource electrode, field effect transistor MtjGrid connect ground capacity CtjAnd resistance
Rtj, resistance RtjThe other end connect ground resistance RsjWith resistance Rfj, resistance RfjThe other end connect resistance RrjWith resistance Rdj, electricity
Hinder RrjThe other end connect field effect transistor MrjGrid, resistance RdjThe other end connect field effect transistor MrjDrain electrode,
Field effect transistor MrjGrid be also connected with ground capacity Crj；Field effect transistor MpjDrain electrode connect field effect transistor Mqj
Source electrode, field effect transistor MqjDrain electrode connect field effect transistor MojSource electrode, field effect transistor MqjGrid connection
Ground capacity CqjWith resistance Rqj, resistance RqjThe other end connect ground resistance RpjWith resistance Rmj, resistance RmjThe other end connection
Resistance RojWith resistance Rnj, resistance RojThe other end connect field effect transistor MojGrid, resistance RnjThe other end connect field
Effect transistor MojDrain electrode, field effect transistor MojGrid be also connected with ground capacity Coj, field effect transistor MrjIt is imitated with field
Answer transistor MojDrain electrode pass through capacitor CdjConnection, field effect transistor MrjDrain electrode connection N difference three stack amplification network
The first output end, field effect transistor MojDrain electrode connection N difference three stack amplification network second output terminal, wherein N
It is one, two, three and four, j=1,2,3 and 4.
4. the active transformation of a kind of high power distribution type according to claim 1 synthesizes power amplifier, which is characterized in that institute
Stating distributed impedances matching transformation network includes the transformer T successively coupled1、T2、T3And T4, transformer T1Primary coil it is same
Name end connects transformer T2The first primary coil non-same polarity, transformer T2The second primary coil Same Name of Ends connect become
Depressor T3Grade coil non-same polarity, transformer T3Primary coil Same Name of Ends connect transformer T4Primary coil it is non-
Same Name of Ends, transformer T4Primary coil Same Name of Ends connect transformer T1Primary coil non-same polarity, while transformer T2
The Same Name of Ends of the first primary coil connect the output end and ground capacity C of distributed impedances matching transformation networkout, become
Depressor T2The second primary coil non-same polarity ground connection；Transformer T1Secondary coil non-same polarity and Same Name of Ends connect respectively
Meet the second input terminal, the third input terminal of the distributed impedances matching transformation network, transformer T2Secondary coil it is non-same
Name end and Same Name of Ends are separately connected the 4th input terminal, the 5th input terminal of the distributed impedances matching transformation network, transformer
T3Secondary coil non-same polarity and Same Name of Ends be separately connected distributed impedances matching transformation network the 6th input terminal,
7th input terminal, transformer T4Secondary coil non-same polarity and Same Name of Ends be separately connected distributed impedances matching transformation
The 8th input terminal and first input end of network, transformer T1、T2、T3And T4The centre tap point of secondary coil be separately connected
9th to the 12nd input terminal of the distributed impedances matching transformation network.
5. the active transformation of a kind of high power distribution type according to claim 1 synthesizes power amplifier, which is characterized in that institute
State the output end connection inductance L of first to fourth power supply biasing networkscj, inductance LcjThe other end connect bias voltage VdAnd ground connection
Capacitor Cj, wherein j=1,2,3 and 4.
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| CN201910684507.6A CN110324015A (en) | 2019-07-26 | 2019-07-26 | A kind of active transformation synthesis power amplifier of high power distribution type |
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| CN201910684507.6A Pending CN110324015A (en) | 2019-07-26 | 2019-07-26 | A kind of active transformation synthesis power amplifier of high power distribution type |
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