CN109687830A - A kind of ultra-wideband amplifier based on HBT-HEMT Stack Technology - Google Patents
A kind of ultra-wideband amplifier based on HBT-HEMT Stack Technology Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45302—Indexing scheme relating to differential amplifiers the common gate stage of a cascode dif amp being controlled
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Abstract
The invention discloses a kind of ultra-wideband amplifiers based on HBT-HEMT Stack Technology, distribution network is inputted including second-order matrix, network is balanced between second-order matrix grade, second-order matrix output synthesis network, first CECG stacked transistors, 2nd CECG stacked transistors, 3rd CECG stacked transistors, 4th CECG stacked transistors, network and second-order matrix output synthesis network the first feeding network being connected and the second feeding network being connected with first to fourth CECG stacked transistors are balanced between second-order matrix grade, core architecture of the present invention amplifies network using the matrix that first to fourth CECG stacks transistor npn npn composition, combine second-order matrix power amplifier ultra wide band Frequency Response, the high frequency mismatch feature of amplifier is stacked so as to improve traditional single CE stacking or CG, so that Entire power amplifier obtains good wide band high-gain and high-power output ability.
Description
Technical field
The present invention relates to hetero-junction bipolar transistor radio-frequency power amplifier and integrated circuit fields, especially for super
A kind of ultra-wideband amplifier based on HBT-HEMT Stack Technology of the transmitting module application of broadband transceiver end.
Background technique
With the fast development of spread spectrum, software radio, ultra-wideband communications, WLAN (WLAN) etc., radio frequency
Front-end transceiver also develops to high-performance, highly integrated, low-power consumption direction.Therefore the urgent demand transmitter in market radio frequency with
Microwave power amplifier has the performances such as ultra wide band, high-output power, high efficiency, low cost, and integrated circuit is exactly expected to completely
The key technology of the foot market demand.
However, when realizing radio frequency and microwave power amplifier chip circuit using integrated circuit technology design, performance
Certain restriction is received with cost, major embodiment:
(1) wide band high-gain amplifying power is limited: traditional single-transistor receives the influence of gain bandwidth product, needs to sacrifice increasing
Benefit could obtain ultra wide band amplifying power, and therefore, wide band high-gain amplifying power is severely limited.
(2) broadband high-power amplifying power is limited: the characteristic frequency of transistor is higher and higher in semiconductor technology, thus band
Low breakdown voltage is carried out to limit the power capacity of one-transistor.In order to obtain power capabilities, multichannel is generally required
Transistor power synthesis, but since the energy loss of multichannel synthesis network causes the efficiency of power amplifier relatively low, circuit
It is unable to satisfy low-power consumption or green communications demand.
The circuit structure of common ultra-wideband high power amplifier has very much, most typically traditional distributed amplifier,
But the requirement that traditional distributed amplifier will meet parameters simultaneously is very difficult, is primarily due to:
1. core amplifying circuit is multiple single-transistors using distributed air-defense in traditional distributed power amplifier
The mode of arrangement is realized, since single-transistor is influenced by parasitic parameter, when being increased with working frequency, and power gain meeting
It significantly reduces while power characteristic etc. also can significantly deteriorate, therefore in order to obtain the flat enlarged structure of ultra wide band, it is necessary to is sacrificial
Domestic animal low-frequency gain carrys out balanced high-frequency loss, causes the ultra wide band gain of traditional distributed amplifier very low；
2. also having and being put using Cascode pair transistor distribution to improve the influence that amplifier gain improves isolation
Big structure, but although Cascode pair transistor increases circuit isolation, but can not gain become with what frequency significantly deteriorated
Gesture also cannot achieve the optimum impedance matching between Cascode pair transistor, to reduce characteristics of output power.
It can thus be seen that the ultra-wide band radio-frequency Designing power amplifier difficult point based on integrated circuit technology are as follows: ultra wide band
Lower high-power output difficulty is larger；The distributed amplification structure of traditional single transistor structure or Cascode transistor exists very
More limitations.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of ultra-wideband amplifier based on HBT-HEMT Stack Technology,
The advantages of combining based on triode Stack Technology and matrix amplifier has high-power output ability, high power under ultra wide band
Gain, it is good input, output matching properties, and it is at low cost the advantages that.
The technical scheme to solve the above technical problems is that a kind of ultra wide band based on HBT-HEMT Stack Technology
Amplifier, which is characterized in that inputted between distribution network, second-order matrix grade including second-order matrix and balance network, second-order matrix output
Synthesize network, the first CECG stacked transistors, the 2nd CECG stacked transistors, the 3rd CECG stacked transistors, the 4th CECG heap
Folded transistor and balanced between second-order matrix grade the first feeding network that network and second-order matrix output synthesis network are connected and
The second feeding network being connected with first to fourth CECG stacked transistors；
The input terminal of second-order matrix input distribution network is the ultra-wideband amplifier entirely based on HBT-HEMT Stack Technology
Input terminal, the first output end connect with the input terminal of the first CECG stacked transistors, second output terminal and the 2nd CECG
The input terminal of stacked transistors connects；
The first port that network is balanced between second-order matrix grade is connect with the first output end of the first feeding network, second-order matrix
The input terminal of the second port of network and the output end of the first CECG stacked transistors, the 3rd CECG stacked transistors is balanced between grade
It connects simultaneously, the third port of network and output end, the 4th CECG of the 2nd CECG stacked transistors is balanced between second-order matrix grade
The input terminal of stacked transistors connects simultaneously；
The output end of second-order matrix output synthesis network is the ultra-wideband amplifier entirely based on HBT-HEMT Stack Technology
Output end, first input end connect with the second output terminal of the first feeding network, the second input terminal and the 3rd CECG heap
The output end connection of folded transistor, third input terminal are connect with the output end of the 4th CECG stacked transistors；
The input terminal of first feeding network is connect with supply voltage Vdd；
The input terminal of second feeding network is connect with supply voltage Vcc, the output end of the second feeding network and first to
The feed end of four CECG stacked transistors connects.
Further, second-order matrix input distribution network includes putting from the ultra wide band based on HBT-HEMT Stack Technology
The inductance L that big device input terminal is sequentially connected in series to ground terminalb1、Lb2、Lb3, capacitance Cload1With load resistance Rload1, inductance Lb1
With Lb2Connecting node be second-order matrix input distribution network the first output end, inductance Lb2With Lb3Connecting node be second order
The second output terminal of Input matrix distribution network.
The beneficial effect of above-mentioned further scheme is: the second-order matrix input distribution network that the present invention uses is in addition to being able to achieve
The distributed power distribution of input radio frequency signal is outer, moreover it is possible to carry out impedance matching to radio-frequency input signals and improve the stabilization of circuit
Property.
Further, the input terminal of N CECG stacked transistors connects capacitor Cbj, capacitor CbjThe other end connect cascode
Pipe QsjBase stage, QsjFeed inductance L in sequential series between base stage and the feed end of N CECG stacked transistorssjAnd feedback
Resistance Rsj, cascode pipe QsjEmitter ground connection, QsjCollector connect field effect transistor MtjSource electrode, MtjGrid with
Resistance RrjWith capacitor CtjIt is connected, capacitor CtjThe other end ground connection, resistance RrjThe other end connect resistance R simultaneouslypj、Rqj, resistance
RpjThe other end ground connection, resistance RqjThe other end be connected to field effect transistor MtjDrain electrode field effect transistor MtjDrain electrode
Connect the output end of N CECG stacked transistors, wherein N mono-, two, three, four, j=1,2,3,4.
The beneficial effect of above-mentioned further scheme is: the CECG stacking transistor npn npn that the present invention uses, which can be obviously improved, to be put
The gain of big device and power capacity, while improving mismatch properties between the grade of conventional CSCG stacking transistor npn npn, it reduces equivalent defeated
Capacitor expands amplifier bandwidth out.
Further, network is balanced between second-order matrix grade includes the resistance R being sequentially connected in seriesload2, capacitor Cload2, inductance Lm1、
Lm2、Lm3, capacitor Cload3, resistance Rload3, and Rload2And Rload3The other end be grounded simultaneously, capacitor Cload2With inductance Lm1
Connected node balances the first port of network, inductance L between second-order matrix gradem1With inductance Lm2Connected node is second moment
The second port of network, inductance L are balanced between battle array gradem2With inductance Lm3Connected node balances the of network between second-order matrix grade
Three output ports.
The beneficial effect of above-mentioned further scheme is: network is balanced between the second-order matrix grade that the present invention uses in addition to being able to achieve
The distributed power distribution of interstage radio frequency signal is outer, moreover it is possible to carry out impedance matching to radio frequency inter stage signal and improve the stabilization of circuit
Property.
Further, second-order matrix output synthesis network includes the resistance R being sequentially connected in seriesload4, capacitor Cload4, inductance Lc1、
Lc2、Lc3, capacitor Cout, resistance Rload4The other end ground connection, capacitor CoutThe other end be second-order matrix output synthesis network it is defeated
Outlet, capacitor Cload4With inductance Lc1Connected node is the first input end at second-order matrix output synthesis network, inductance Lc1With electricity
Feel Lc2Connected node is second input terminal at second-order matrix output synthesis network, inductance Lc2With inductance Lc3Connected node is
The third input terminal at second-order matrix output synthesis network.
The beneficial effect of above-mentioned further scheme is: the second-order matrix output synthesis network that the present invention uses is in addition to being able to achieve
The distributed power synthesis for exporting radiofrequency signal is outer, moreover it is possible to carry out impedance matching to radio frequency output signal and improve the effect of circuit
Rate.
Further, the input terminal of the first feeding network connects ground capacity C simultaneouslyvdd, feed inductance Lvdd1And Lvdd2, feedback
Inductance Lvdd1The other end be the first feeding network the first output end, feed inductance Lvdd2The other end be the first transmission network
The second output terminal of network.
Further, the input terminal of the second feeding network connects resistance RVCC1And RVCC2, RVCC3, resistance RVCC2The other end
Field effect transistor M is connected simultaneouslyvccGrid and electricity RVCC3, resistance RVCC2The other end and field effect transistor MvccGrid
With cascode pipe QvccCollector connect simultaneously, cascode pipe QvccEmitter ground connection, MvccSource electrode and QvccBase stage pass through resistance
RVCC4Connection, RVCC1With RVCC3Node and field effect transistor MvccDrain electrode connection, Rvcc4With MvccSource electrode tie point be the
The output end of two feeding networks.
Detailed description of the invention
Fig. 1 is power amplifier functional block diagram of the present invention；
Fig. 2 is power amplifier circuit figure of the present invention.
Specific embodiment
Carry out detailed description of the present invention illustrative embodiments with reference to the drawings.It should be appreciated that shown in attached drawing and
The embodiment of description is only exemplary, it is intended that is illustrated the principle and spirit of the invention, and is not limited model of the invention
It encloses.
The embodiment of the invention provides a kind of ultra-wideband amplifier based on HBT-HEMT Stack Technology, one kind being based on HBT-
The ultra-wideband amplifier of HEMT Stack Technology, which is characterized in that input between distribution network, second-order matrix grade and put down including second-order matrix
Weigh network, second-order matrix output synthesis network, the first CECG stacked transistors, the 2nd CECG stacked transistors, the 3rd CECG heap
Folded transistor, the 4th CECG stacked transistors and balance network and second-order matrix output synthesis network phase between second-order matrix grade
The first feeding network even.And network and the first CECG stacked transistors, the 2nd CECG stacking are balanced between second-order matrix grade
The second connected feeding network of transistor, the 3rd CECG stacked transistors, the 4th CECG stacked transistors.
As shown in Figure 1, the input terminal of second-order matrix input distribution network is entirely super based on HBT-HEMT Stack Technology
The input terminal of broad band amplifier, the first output end are connect with the input terminal of the first CECG stacked transistors, second output terminal
It is connect with the input terminal of the 2nd CECG stacked transistors；
The first port that network is balanced between second-order matrix grade is connect with the first output end of the first feeding network, second-order matrix
The input terminal of the second port of network and the output end of the first CECG stacked transistors, the 3rd CECG stacked transistors is balanced between grade
It connects simultaneously, the third port of network and output end, the 4th CECG of the 2nd CECG stacked transistors is balanced between second-order matrix grade
The input terminal of stacked transistors connects simultaneously；
The output end of second-order matrix output synthesis network is the ultra-wideband amplifier entirely based on HBT-HEMT Stack Technology
Output end, first input end connect with the second output terminal of the first feeding network, the second input terminal and the 3rd CECG heap
The output end connection of folded transistor, third input terminal are connect with the output end of the 4th CECG stacked transistors；
The input terminal of first feeding network is connect with supply voltage Vdd；
The input terminal of second feeding network is connect with supply voltage Vcc, the output end of the second feeding network and first to
The feed end of four CECG stacked transistors connects.
As shown in Fig. 2, second-order matrix input distribution network includes the inductance L being sequentially connected in series from amplifier in groundb1、
Lb2、Lb3, capacitance Cload1With load resistance Rload1, inductance Lb1With Lb2Connecting node be second-order matrix input distribution network
The first output end, inductance Lb2With Lb3Connecting node be second-order matrix input distribution network second output terminal；
The input terminal of N CECG stacked transistors (wherein N is one, two, three, four) connects capacitor Cbj(wherein j=1,2,
3,4), capacitor CbjThe other end connect cascode pipe QsjBase stage, QsjBetween base stage and the feed end of N CECG stacked transistors
Feed inductance L in sequential seriessjAnd feed resistance Rsj, cascode pipe QsjEmitter ground connection, QsjCollector connect field-effect
Transistor MtjSource electrode, MtjGrid and resistance RrjWith capacitor CtjIt is connected, capacitor CtjThe other end ground connection, resistance RrjIt is another
It holds while connecting resistance Rpj、Rqj, resistance RpjThe other end ground connection, resistance RqjThe other end be connected to field effect transistor Mtj's
Drain field effect transistor MtjDrain electrode connection N CECG stacked transistors output end；
It includes the resistance R being sequentially connected in series that network is balanced between second-order matrix gradeload2, capacitor Cload2, inductance Lm1、Lm2、Lm3, electricity
Hold Cload3, resistance Rload3, and Rload2And Rload3The other end be grounded simultaneously, capacitor Cload2With inductance Lm1Connected node
The first port of network, inductance L are balanced between second-order matrix gradem1With inductance Lm2Connected node balances between second-order matrix grade
The second port of network, inductance Lm2With inductance Lm3Connected node balances the third output port of network between second-order matrix grade；
Second-order matrix output synthesis network includes the resistance R being sequentially connected in seriesload4, capacitor Cload4, inductance Lc1、Lc2、Lc3, electricity
Hold Cout, resistance Rload4The other end ground connection, capacitor CoutThe other end be second-order matrix output synthesis network output end, capacitor
Cload4With inductance Lc1Connected node is the first input end at second-order matrix output synthesis network, inductance Lc1With inductance Lc2It is connected
Node be second-order matrix output synthesis network the second input terminal, inductance Lc2With inductance Lc3Connected node is second-order matrix
The third input terminal at output synthesis network；
The input terminal of first feeding network connects ground capacity C simultaneouslyvdd, feed inductance Lvdd1And Lvdd2, feed inductance
Lvdd1The other end be the first feeding network the first output end, feed inductance Lvdd2The other end be the of the first feeding network
Two output ends；
The input terminal of second feeding network connects resistance RVCC1And RVCC2, RVCC3, resistance RVCC2The other end connect field simultaneously
Effect transistor MvccGrid and electricity RVCC3, resistance RVCC2The other end and field effect transistor MvccGrid and cascode pipe Qvcc
Collector connect simultaneously, cascode pipe QvccEmitter ground connection, MvccSource electrode and QvccBase stage pass through resistance RVCC4Connection, RVCC1
With RVCC3Node and field effect transistor MvccDrain electrode connection, Rvcc4With MvccSource electrode tie point be second feeding network
Output end.
Concrete operating principle and process of the invention are introduced below with reference to Fig. 2:
Radio-frequency input signals enters circuit by input terminal IN, and second-order matrix input point is entered in a manner of current distribution formula
The inductance L of distribution networkb1、Lb2、Lb3, useful signal is by inputting blocking coupled capacitor Cb1And Cb2Into cascode pipe Qs1And Qs2Base
Pole, reflection signal pass through capacitance Cload1Into input absorbing load Rload1, useful signal is again with current distribution formula from crystalline substance
Body pipe Qt1And Qt2Collector output, then entered in a manner of current distribution formula and balance network L between second-order matrix gradem1、Lm2、
Lm3, useful signal is by inputting blocking coupled capacitor Cb3And Cb4Into cascode pipe Qs3And Qs4Base stage, reflection signal pass through
Capacitance Cload2、Cload3Into absorbing load R between gradeload2、Rload3, last useful signal in a manner of current distribution formula into
Enter second-order matrix output synthesis network Lc1、Lc2、Lc3, pass through collector blocking coupled capacitor CoutIt is exported from output end OUT, it is anti-
It penetrates incoming signal and passes through capacitance Cload4Into input absorbing load Rload4。
Based on foregoing circuit analyze, a kind of ultra-wideband amplifier based on HBT-HEMT Stack Technology proposed by the present invention with
The previous amplifier architecture based on integrated circuit technology is the difference is that core architecture stacks crystal using Matrix C ECG
Pipe amplifies network:
CECG stacked transistor is very different in structure with traditional one-transistor, is not repeated herein；
CECG stack transistor npn npn and Cascode transistor the difference is that: the piled grids of Cascode transistor
Compensating electric capacity is the biggish capacitor of capacitance, and for realizing the AC earth of base stage, and CECG stacks the grid compensation of transistor npn npn
Capacitor is the lesser capacitor of capacitance, for realizing the synchronous hunting of grid voltage.
In the ultra-wideband amplifier circuit entirely based on HBT-HEMT Stack Technology, the size of transistor and other direct currents
Feed resistance, the size of compensating electric capacity be after the indices such as the gain for comprehensively considering entire circuit, bandwidth and output power certainly
Fixed, by the layout design and rational deployment in later period, required indices can be better achieved, realize in ultra wide band
Under the conditions of high-power output ability, high power gain, good input and output matching properties.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of ultra-wideband amplifier based on HBT-HEMT Stack Technology, which is characterized in that input and distribute including second-order matrix
Network, second-order matrix output synthesis network, the first CECG stacked transistors, the 2nd CECG heap are balanced between network, second-order matrix grade
Folded transistor, the 3rd CECG stacked transistors, the 4th CECG stacked transistors and the balance network and two between second-order matrix grade
Rank Output matrix the first connected feeding network of synthesis network and the second feedback being connected with first to fourth CECG stacked transistors
Electric network；
The input terminal of the second-order matrix input distribution network is that the entire ultra wide band based on HBT-HEMT Stack Technology is put
The input terminal of big device, the first output end are connect with the input terminal of the first CECG stacked transistors, second output terminal and
The input terminal of the 2nd CECG stacked transistors connects；
The first port that network is balanced between the second-order matrix grade is connect with the first output end of first feeding network, described
The second port of network is balanced between second-order matrix grade and the output end of the first CECG stacked transistors, the 3rd CECG stack crystalline substance
The input terminal of body pipe connects simultaneously, and the third port and the 2nd CECG that network is balanced between the second-order matrix grade stack crystal
The output end of pipe, the 4th CECG stacked transistors input terminal connect simultaneously；
The output end of the second-order matrix output synthesis network is that the entire ultra wide band based on HBT-HEMT Stack Technology is put
The output end of big device, first input end are connect with the second output terminal of first feeding network, the second input terminal and institute
State the output end connection of the 3rd CECG stacked transistors, the output end of third input terminal and the 4th CECG stacked transistors
Connection；
The input terminal of first feeding network is connect with supply voltage Vdd；
The input terminal of second feeding network is connect with supply voltage Vcc, the output end of the second feeding network and described first
Feed end to the 4th CECG stacked transistors connects.
2. the ultra-wideband amplifier according to claim 1 based on HBT-HEMT Stack Technology, which is characterized in that described two
It includes the inductance L being sequentially connected in series from the ultra-wideband amplifier input terminal to ground terminal that rank Input matrix, which distributes network,b1、Lb2、
Lb3, capacitance Cload1With load resistance Rload1, the inductance Lb1With Lb2Connecting node be the second-order matrix input point
First output end of distribution network, the inductance Lb2With Lb3Connecting node be the second-order matrix input distribution network second
Output end.
3. the ultra-wideband amplifier according to claim 1 based on HBT-HEMT Stack Technology, which is characterized in that described
The input terminal of N CECG stacked transistors connects capacitor Cbj, capacitor CbjThe other end connect cascode pipe QsjBase stage, QsjBase stage with
Feed inductance L in sequential series between the feed end of the N CECG stacked transistorssjAnd feed resistance Rsj, described total
Penetrate pipe QsjEmitter ground connection, QsjCollector connect field effect transistor MtjSource electrode, MtjGrid and resistance RrjAnd electricity
Hold CtjIt is connected, the capacitor CtjThe other end ground connection, the resistance RrjThe other end connect resistance R simultaneouslypj、Rqj, resistance Rpj
The other end ground connection, resistance RqjThe other end be connected to field effect transistor MtjDrain electrode, field effect transistor MtjDrain electrode connect
Connect the output end of the N CECG stacked transistors, wherein N mono-, two, three, four, j=1,2,3,4.
4. the ultra-wideband amplifier according to claim 1 based on HBT-HEMT Stack Technology, which is characterized in that described two
It includes the resistance R being sequentially connected in series that network is balanced between rank matrix gradeload2, capacitor Cload2, inductance Lm1、Lm2、Lm3, capacitor Cload3, electricity
Hinder Rload3, and Rload2And Rload3The other end be grounded simultaneously, capacitor Cload2With inductance Lm1Connected node is described two
The first port of network, inductance L are balanced between rank matrix gradem1With inductance Lm2Connected node balances between the second-order matrix grade
The second port of network, inductance Lm2With inductance Lm3Connected node balances the third output of network between the second-order matrix grade
Port.
5. the ultra-wideband amplifier according to claim 1 based on HBT-HEMT Stack Technology, which is characterized in that described two
It includes the resistance R being sequentially connected in series that rank Output matrix, which synthesizes network,load4, capacitor Cload4, inductance Lc1、Lc2、Lc3, capacitor Cout, resistance
Rload4The other end ground connection, capacitor CoutThe other end be the second-order matrix output synthesis network output end, capacitor Cload4
With inductance Lc1Connected node is the first input end at second-order matrix output synthesis network, inductance Lc1With inductance Lc2It is connected
Node be the second-order matrix output synthesis network the second input terminal, inductance Lc2With inductance Lc3Connected node is described
The third input terminal at second-order matrix output synthesis network.
6. the ultra-wideband amplifier according to claim 1 based on HBT-HEMT Stack Technology, which is characterized in that described
The input terminal of one feeding network connects ground capacity C simultaneouslyvdd, feed inductance Lvdd1And Lvdd2, feed inductance Lvdd1The other end
For the first output end of first feeding network, inductance L is fedvdd2The other end be the second defeated of first feeding network
Outlet.
7. the ultra-wideband amplifier according to claim 1 based on HBT-HEMT Stack Technology, which is characterized in that described
The input terminal of two feeding networks connects resistance RVCC1And RVCC2, RVCC3, resistance RVCC2The other end connect field effect transistor simultaneously
MvccGrid and electricity RVCC3, resistance RVCC2The other end and the field effect transistor MvccGrid and cascode pipe QvccCurrent collection
Pole connects simultaneously, the cascode pipe QvccEmitter ground connection, MvccSource electrode and QvccBase stage pass through resistance RVCC4Connection, RVCC1With
RVCC3Node and field effect transistor MvccDrain electrode connection, Rvcc4With MvccSource electrode tie point be the second feeding network it is defeated
Outlet.
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| CN110311634A (en) * | 2019-08-07 | 2019-10-08 | 青海民族大学 | A kind of ultra-wideband amplifier based on CSCB transistor |
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