CN110265477A - IGBT device with PNP break-through triode - Google Patents

IGBT device with PNP break-through triode Download PDF

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Publication number
CN110265477A
CN110265477A CN201910572446.4A CN201910572446A CN110265477A CN 110265477 A CN110265477 A CN 110265477A CN 201910572446 A CN201910572446 A CN 201910572446A CN 110265477 A CN110265477 A CN 110265477A
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type
break
pnp
triode
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CN110265477B (en
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李泽宏
孙肇峰
何云娇
赵一尚
莫佳宁
杨洋
贾鹏飞
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Abstract

The invention belongs to power semiconductor technologies fields, and in particular to a kind of IGBT device with PNP break-through triode, the second collecting zone of p-type, the second base area of N-type and the area discrete floating Pbody form PNP triode structure；When device forward conduction, PNP triode structure is not turned on, and stores hole enhancing conductance modulation, and further decrease Leakage Current by diode concatenated on metal electrode；PNP triode break-through provides hole leakage path when shutdown, reduces the turn-off time, reaches in the case where not influencing other electrology characteristics, reduce switch time and switching loss；Device is under blocking state, and PNP triode break-through increases device voltage endurance capability.

Description

IGBT device with PNP break-through triode
Technical field
The invention belongs to power semiconductor technologies fields, and in particular to a kind of IGBT device with PNP break-through triode.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), is in MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor field-effect are brilliant Body pipe) and BJT (Bipolar Junction Transistor, bipolar junction transistor) on the basis of be born one kind it is novel Compound power device.IGBT is excellent since it is small with driving current, input impedance is high, thermal stability is good, operating current is big etc. Point, be widely used in Switching Power Supply, rectifier, inverter, UPS (Uninterruptible Power System, not between Power-off source) etc. fields, while be also rail traffic, solar wind-energy power generation etc. development of new techniques basis.
Since the Baliga of General Electric Company in 1979 is put forward for the first time the concept of IGBT, sent out rapidly Exhibition.By PT (Punch Through) the type structure of getting up early to NPT (Non-punch Through) type structure, then arrive N+ buffer layer The addition of structure improves IGBT on-state characteristic and switching characteristic step by step.Its grid structure is also converted to slot by planar gate simultaneously Grid solve the problems, such as that the presence in the region JFET causes saturation voltage drop high.With the continuous improvement of technological development and demand, The size of IGBT cellular is also being gradually reduced, and unit area current density constantly increases, and is led to device latch-up immunity and is resisted Short-circuit capacity decline.
For this problem, it is thus proposed that introduce FP (Floating-Pbody) structure between two slot grid, reduce The gully density of unit area is substantially the current density for reducing unit area, to improve short-circuit capacity.But this is tied The introducing of structure, the variation of FP current potential causes grid voltage after generating displacement current, with gate capacitance couple in IGBT switching process It influences, reduces grid control ability.There is document proposition thus, FP structure is changed to discrete floating P plot structure (SFP, Separate Floating Pbody), separate the P-doped zone between two slots with slot, displacement current can not act on grid；And The area SFP depth is deeper than the depth of slot grid, slot grid bottom electric field is weakened, and enhance conductance modulation, but will affect turn-off power loss； If the area discrete floating P is grounded, turn-off power loss can be effectively reduced, improve blocking characteristics, but will lead to forward saturation voltage drop increasing Greatly.
Summary of the invention
In view of described above, the present invention is existing due to discrete for the slot grid IGBT device in the existing area discrete floating P The problems such as floating P area's potential change influences device on-state, blocking state and switching loss are big, providing one kind has The IGBT device of PNP break-through triode.By forming break-through triode in the area discrete floating P, break-through audion is utilized Form holoe carrier channel；Since in the bar state, PNP triode break-through makes the reduction of discrete floating P area's current potential, effectively Increase blocking ability；The variation of the area discrete floating P inner potential makes break-through triode in turn off process in turn off process It opens, reduces turn-off power loss, and the access due to increasing hole shunting, improve device latch-up immunity；Three pole of break-through Pipe will not be opened in normally state, and further decrease Leakage Current by series diode, ensure that the conducting of device Characteristic and anti-EMI filter ability.
For achieving the above object, technical solution of the present invention is as follows:
A kind of IGBT device with PNP break-through triode, entire cellular are symmetrical about cellular middle line；Structure cell from Under supreme metal electrode 7, P+ collecting zone 6, N-type buffer layer 5, the drift region N- 4 including stacking gradually；Metal emitting 9, metal Electrode 16 and metal connecting line 17 are located at the top of the drift region N- 4；The top layer intermediate region of the drift region N- 4 is equipped with discrete floating The inner top layer intermediate region in the area Pbody 8, the area discrete floating Pbody 8 is equipped with the second base area of N-type 12, the second base area of N-type 12 inner top layer intermediate regions are equipped with the second collecting zone of p-type 13；The second collecting zone of p-type 13, the second base area of N-type 12 and discrete floating The area Pbody 8 forms PNP triode structure；There is one or more more by N+ between the metal emitting 9 and metal electrode 16 The diode that crystal silicon 14, P+ polysilicon 15 are formed, is connected by metal connecting line 17 between multiple diodes；The N+ polysilicon 14, it is formed and is isolated with the drift region N- 4 by dielectric layer 11 below the diode that P+ polysilicon 15 is formed；The base area P+ 2, N+ hair Area 1 is penetrated to contact with metal emitting 9；Grid is equipped between the base area P+ 2, N+ emitter region 1, with the area discrete floating Pbody 8 Structure, the gate structure include gate electrode 10 and gate dielectric layer 3, and gate dielectric layer 3 extends into N- drift along device vertical direction It moves in area 4 and forms groove, the setting of gate electrode 10 is in the trench；The side and the base area P+ 2 of the gate dielectric layer 3, N+ emit Area 1 and the drift region N- 4 contact, and the other side of the gate dielectric layer 3 is separated by with the area discrete floating Pbody 8 by the drift region N- 4 From.
It is preferred that by control by the second collecting zone of p-type 13, the second base area of N-type 12 and the area discrete floating Pbody The thickness and doping concentration of 8 triodes formed, make triode base area under the conditions of device on-state will not fully- depleted.
It is preferred that the junction depth in the area discrete floating Pbody 8 is greater than the depth of gate structure.
It is preferred that the doping way of the second collecting zone of p-type 13 is non-uniform doping or Uniform Doped；And N-type Effective base area thickness that lower boundary is adulterated in second base area 9 is less than its length extending transversely.
It is preferred that the difference for the junction depth that lower boundary is adulterated in the area discrete floating Pbody 8 and the second base area of N-type 12 is less than Its length extending transversely.
It is preferred that the doping way in the area discrete floating Pbody 8 is non-homogeneous heavy doping or uniform heavy doping.
It is preferred that semiconductor material used in device is monocrystalline silicon, silicon carbide or gallium nitride.
It is necessary to meet following condition for audion in the area discrete floating Pbody of the invention:
(1) depth of gate dielectric layer is less than the depth in the area discrete floating Pbody.
(2) area discrete floating Pbody is in device blocking state or on state, endless fully- depleted.
(3) the second base area of on state N-type can not be completely depleted, and triode is in complete blocking state.
Compared with prior art, the beneficial effects of the present invention are:
(1) for the present invention by introducing PNP triode in the discrete area P+ floating Pbody, it is logical that PNP triode is equivalent to hole Way switch；In device forward conduction, PNP triode is blocking state, can store hole, reduces the saturation conduction pressure of device Drop；During devices switch, PNP triode break-through provides access of releasing for hole, reduces turn-off time and turn-off power loss； In the bar state, PNP triode break-through reduces discrete P+ floating Pbody area's current potential, increases breakdown voltage device.
(2) present invention by metal electrode connect one or more diode further decrease PNP triode leakage Electric current.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the area traditional discrete floating Pbody IGBT device；
Fig. 2 is the structural schematic diagram of the IGBT device provided by the invention with PNP break-through triode；
Fig. 3 is the IGBT device equivalent circuit diagram provided by the invention with PNP break-through triode；
In figure: 1 is N+ emitter region, and 2 be the base area P+, and 3 be gate dielectric layer, and 4 be the drift region N-, and 5 be N-type buffer layer, and 6 be P+ Collecting zone, 7 be metal collector, and 8 be the area discrete floating Pbody, and 9 be metal emitting, and 10 be gate electrode, and 11 be dielectric layer, 12 be the second base area of N-type, and 13 be the second collecting zone of p-type, and 14 be N+ polysilicon, and 15 be P+ polysilicon, and 16 be metal electrode, and 17 are Metal connecting line.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from Various modifications or alterations are carried out under spirit of the invention.
A kind of IGBT device with PNP break-through triode, entire cellular are symmetrical about cellular middle line；Structure cell from Under supreme metal electrode 7, P+ collecting zone 6, N-type buffer layer 5, the drift region N- 4 including stacking gradually；Metal emitting 9, metal Electrode 16 and metal connecting line 17 are located at the top of the drift region N- 4；The top layer intermediate region of the drift region N- 4 is equipped with discrete floating The inner top layer intermediate region in the area Pbody 8, the area discrete floating Pbody 8 is equipped with the second base area of N-type 12, the second base area of N-type 12 inner top layer intermediate regions are equipped with the second collecting zone of p-type 13；The second collecting zone of p-type 13, the second base area of N-type 12 and discrete floating The area Pbody 8 forms PNP triode structure；There is one or more more by N+ between the metal emitting 9 and metal electrode 16 The diode that crystal silicon 14, P+ polysilicon 15 are formed, is connected by metal connecting line 17 between multiple diodes；The N+ polysilicon 14, it is formed and is isolated with the drift region N- 4 by dielectric layer 11 below the diode that P+ polysilicon 15 is formed；The base area P+ 2, N+ hair Area 1 is penetrated to contact with metal emitting 9；Grid is equipped between the base area P+ 2, N+ emitter region 1, with the area discrete floating Pbody 8 Structure, the gate structure include gate electrode 10 and gate dielectric layer 3, and gate dielectric layer 3 extends into N- drift along device vertical direction It moves in area 4 and forms groove, the setting of gate electrode 10 is in the trench；The side and the base area P+ 2 of the gate dielectric layer 3, N+ emit Area 1 and the drift region N- 4 contact, and the other side of the gate dielectric layer 3 is separated by with the area discrete floating Pbody 8 by the drift region N- 4 From.
Specifically, being formed by control by the second collecting zone of p-type 13, the area the second base area of N-type 12 and discrete floating Pbody 8 Triode thickness and doping concentration, make triode base area under the conditions of device on-state will not fully- depleted.
Specifically, the junction depth in the area discrete floating Pbody 8 is greater than the depth of gate structure.
Specifically, the doping way of the second collecting zone of p-type 13 is non-uniform doping or Uniform Doped；And the second base of N-type Effective base area thickness that lower boundary is adulterated in area 9 is less than its length extending transversely.
Specifically, the difference that the junction depth of lower boundary is adulterated in the area discrete floating Pbody 8 and the second base area of N-type 12 is less than its transverse direction Extension length.
Specifically, the doping way in the area discrete floating Pbody 8 is non-homogeneous heavy doping or uniform heavy doping.
Specifically, semiconductor material used in device is monocrystalline silicon, silicon carbide or gallium nitride.Below with reference to embodiment to this Inventive principle is described in detail:
For structure of the invention in forward blocking, IGBT grid is zero potential, and triode is in pass-through state at this time, discrete floating The empty area Pbody 8 by break-through triode and forward-biased diode be connected directly, be equivalent to punch-through FP and be grounded, increase The pressure resistance for the PN junction that the drift region floating Pbody/N- 4 is formed；And since 8 junction depth of the area discrete floating Pbody is greater than gate dielectric layer 3, slot grid bottom electric field can be weakened, help to promote device electric breakdown strength.In contrast, the traditional discrete floating Pbody of Fig. 1 Area's IGBT structure, the area discrete floating Pbody 8 can store hole in forward conduction, and hole can only be let out by the base area P+ when shutdown It puts, increases path length of releasing, increase turn-off time and turn-off power loss；Meanwhile in the bar state, discrete floating The area Pbody floating, built-in potential are higher than structure of the invention and are grounded in the area discrete floating Pbody 8 by diode, make its blocking Voltage is lower than structure of the invention.
For structure of the invention in conducting, FP current potential is insufficient to allow triode break-through, and of the invention has PNP break-through triode IGBT device with the area traditional discrete floating Pbody IGBT structure, can be in the area discrete floating Pbody 8 in break-over of device Enough holes are accumulated, make device that there is lower saturation voltage drop.
Structure of the invention when off, due in device body hole need release, discrete floating during releasing The lifting of 8 current potential of the area Pbody, when reaching the voltage for making break-through triode break-through, access of releasing is opened, and hole is from metal electrode 16 The excess holes of outflow, device inside storage can be extracted faster, can effectively reduce switch time and switching loss.
Device architecture proposed by the present invention determines that device can be realized sufficiently reliable forward blocking ability, improves P- The area base latch-up immunity improves the grid-control ability of device, realizes shorter switch time, reduces switching loss.
In conclusion the IGBT device provided by the invention with PNP break-through triode, compared to current traditional structure, It can be with the hole access of switch change invention introduces one；Pressure resistance, on state hole can be maintained in the bar state Path blockade can enhance conductance modulation effect；In turn off process, hole access is opened, and improves speed of releasing, when reducing shutdown Between, reduce turn-off power loss.
It should be strongly noted that being applicable not only to mesh about the IGBT device with PNP break-through triode in the present invention Preceding 3300V -6500V high pressure IGBT the device generally used is equally applicable to the middle pressure range based on planar gate and groove gate type IGBT device.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention All equivalent modifications or change, should be covered by the claims of the present invention.

Claims (7)

1. a kind of IGBT device with PNP break-through triode, it is characterised in that: its entire cellular is symmetrical about cellular middle line； Structure cell includes the metal electrode (7), P+ collecting zone (6), N-type buffer layer (5), the drift region N- stacked gradually from bottom to up (4)；Metal emitting (9), metal electrode (16) and metal connecting line (17) are located at the top of the drift region N- (4)；The N- drift The top layer intermediate region in area (4) is equipped with the area discrete floating Pbody (8), in the inner top layer of the area discrete floating Pbody (8) Between region be equipped with the second base area of N-type (12), the second base area of N-type (12) inner top layer intermediate region be equipped with the second collecting zone of p-type (13)；The second collecting zone of p-type (13), the second base area of N-type (12) and the area discrete floating Pbody (8) form PNP triode structure； There is one or more by N+ polysilicon (14), P+ polysilicon (15) between the metal emitting (9) and metal electrode (16) The diode of formation is connected by metal connecting line (17) between multiple diodes；The N+ polysilicon (14), P+ polysilicon (15) It is formed and is isolated with the drift region N- (4) by dielectric layer (11) below the diode of formation；The base area P+ (2), N+ emitter region (1) Contacted with metal emitting (9)；The base area P+ (2) is equipped between N+ emitter region (1), with the area discrete floating Pbody (8) Gate structure, the gate structure include gate electrode (10) and gate dielectric layer (3), and gate dielectric layer (3) prolongs along device vertical direction It extends into and forms groove in the drift region N- (4), gate electrode (10) setting is in the trench；The side of the gate dielectric layer (3) It is contacted with the base area P+ (2), N+ emitter region (1) and the drift region N- (4), the other side of the gate dielectric layer (3) and discrete floating The area Pbody (8) is isolated by the drift region N- (4).
2. a kind of IGBT device with PNP break-through triode according to claim 1, it is characterised in that: pass through control It the thickness of the triode formed by the second collecting zone of p-type (13), the second base area of N-type (12) with the area discrete floating Pbody (8) and mixes Miscellaneous concentration makes triode base area under the conditions of device on-state will not fully- depleted.
3. a kind of IGBT device with PNP break-through triode according to claim 1, it is characterised in that: discrete floating The junction depth in the area Pbody (8) is greater than the depth of gate structure.
4. a kind of IGBT device with PNP break-through triode according to claim 1, it is characterised in that: p-type second collects The doping way of electric area (13) is non-uniform doping or Uniform Doped；And effective base of the second base area of N-type (9) doping lower boundary Area's thickness is less than its length extending transversely.
5. a kind of IGBT device with PNP break-through triode according to claim 1, it is characterised in that: discrete floating The difference of the junction depth of the area Pbody (8) and the second base area of N-type (12) doping lower boundary is less than its length extending transversely.
6. a kind of IGBT device with PNP break-through triode according to claim 1, it is characterised in that: discrete floating The doping way in the area Pbody (8) is non-homogeneous heavy doping or uniform heavy doping.
7. a kind of IGBT device with PNP break-through triode according to right 1-6 any one, it is characterised in that: device Semiconductor material used in part is monocrystalline silicon, silicon carbide or gallium nitride.
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