CN107134488B - A kind of insulated gate bipolar transistor of carrier storage enhancing - Google Patents
A kind of insulated gate bipolar transistor of carrier storage enhancing Download PDFInfo
- Publication number
- CN107134488B CN107134488B CN201710404322.6A CN201710404322A CN107134488B CN 107134488 B CN107134488 B CN 107134488B CN 201710404322 A CN201710404322 A CN 201710404322A CN 107134488 B CN107134488 B CN 107134488B
- Authority
- CN
- China
- Prior art keywords
- area
- conduction type
- region
- diode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003860 storage Methods 0.000 title abstract description 7
- 230000002708 enhancing effect Effects 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 206
- 239000000463 material Substances 0.000 claims abstract description 61
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 239000004020 conductor Substances 0.000 claims description 110
- 238000004519 manufacturing process Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000001413 cellular effect Effects 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000002178 crystalline material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 5
- 239000012212 insulator Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of insulated-gate bipolar transistor devices, emitter region uses the semiconductor material with forbidden bandwidth higher than other semiconductor regions, base area and emitter region form the higher PN heterojunction of forward conduction voltage, the diode of diode or more than two series aiding connections between base area and emitter by a diode or two series aiding connections is connected, and the forward conduction voltage of the diode paths between base area and emitter is less than the forward conduction voltage of the PN heterojunction of base area and emitter region formation.In forward conduction, diode current flow between base area and emitter, the current potential of base area is raised, so that the minority carrier of drift region be made to be enhanced in the storage effect near base area.Compared with conventional insulator grid bipolar transistor device, insulated-gate bipolar transistor device of the invention can obtain lower conduction voltage drop.
Description
Technical field
The invention belongs to semiconductor devices, especially semiconductor power device.
Background technique
In general, semiconductor power device needs high breakdown voltage, low conducting voltage (or conducting resistance), fast opens
Close speed and high reliability.In order to obtain high breakdown voltage, semiconductor power device generallys use a doping concentration ratio
The semiconductor region of lower (i.e. resistivity is relatively high) does resistance to pressure area.Insulated gate bipolar transistor (Insulated Gate
Bipolar Transistor, IGBT) it is a kind of bipolar device, it introduces minority carrier and participates in conduction, so that resistance
Lower conducting voltage is obtained to enhance the conductive capability of device full of conductive carrier in the relatively high resistance to pressure area of rate
(or conducting resistance).In addition, IGBT also has current saturation ability, and can be by controlling grid voltage opening come control device
It closes, thus reliability with higher.These features make IGBT be widely used in mesohigh field.Certainly, it introduces a small number of
After carrier, this inevitably will increase the time of switch, especially the increase turn-off time (or shutdown power consumption).In general,
There are tradeoff between the shutdown power consumption and conducting voltage of IGBT, this tradeoff is the important references for evaluating IGBT performance
Foundation.
In order to improve the tradeoff between the shutdown power consumption of IGBT and conducting voltage, collecting zone-drift region knot of IGBT
Structure experienced from punch (Punch Through, PT) to non-punch (Non Punch Through, NPT), then arrive electric field
Cut-off type (Field Stop, FS) or soft punch (Soft Punch Through, SPT) or weak break-through (Light Punch
Through, LPT) process；The gate structure of IGBT experienced the process from planar gate to slot grid；The emission area structure of IGBT
Also there is emitter terminal carrier concentration enhancing technology, wherein Typical Representative has the CSTBT (Carrier of Mitsubishi Electric
Stored Trench Bipolar Transistor) and Toshiba IEGT (Injection Enhanced Gate
Transistor) etc..
In CSTBT, the doping concentration at the top of the resistance to pressure area of N-shaped (or N-shaped drift region) is improved, to inhibit hole
The carrier concentration at the top of N-shaped drift region is improved into emitter, the compromise improved between shutdown power consumption and conducting voltage is closed
System.However, to realize that such structure also will increase the complexity of technique, the requirement to the control precision of technique is also tighter
Lattice.In addition, the electric field at the top of N-shaped drift region at pn-junction can be enhanced after the doping concentration at the top of N-shaped drift region improves, thus
Reduce breakdown voltage.Although some with going deep into N-shaped drift region p+ Qu Yihuan can also be re-introduced into N-shaped drift region near top
Electric field at the pn-junction of solution top, but this can further increase process costs and manufacture difficulty.
Summary of the invention
The purpose of the present invention is to provide a kind of insulated-gate bipolar transistor device, propose that a kind of new emitter terminal carries
Sub- concentration enhancing technology is flowed, which can effectively enhance storage effect of the minority carrier at the top of drift region, manufacture
It is easy to accomplish in technique, and will not influence breakdown voltage.
The present invention provides a kind of insulated-gate bipolar transistor device, and structure cell includes: the first conduction being lightly doped
The drift region (20) of type, and the collecting zone (10) of second conduction type being in contact on one side of the drift region (20), with institute
The base area (30) for stating the second conduction type that the another side of drift region (20) is in contact, at least partially connects with the base area (30)
The emitter region (41) of first conduction type of the heavy doping of touching, with the emitter region (41), the base area (30) and the drift
The gate structure (being made of 50 and 90) that area (20) contact is moved, the collector that the conductor (1) of the collecting zone is formed is covered in
(C), it is covered in the emitter (E) formed with the conductor of the emitter region (2), is covered in conductor (3) shape of the gate structure
At grid (G), it is characterised in that:
The drift region (20) of first conduction type being lightly doped is with the collecting zone (10) of second conduction type
Buffer area (21) mediate contact for directly contacting or passing through first conduction type；
The emitter region (41) of first conduction type of the heavy doping is straight with the base area (30) of second conduction type
Contact or bonding pad (42) mediate contact for passing through first conduction type；
The gate structure (being made of 50 and 90) includes at least one insulating medium layer (90) and at least one conductor region
(50), the insulating medium layer (90) and the emitter region (41), the base area (30) and the drift region (20) are direct
Contact；The another side of the insulating medium layer (70) is directly contacted with the conductor region (50), the conductor region (50) it is another
Face is directly contacted with the grid conductor (3)；The insulating medium layer (90) is made of insulating dielectric materials, and the insulation is situated between
Material is silica or the dielectric material with dielectric coefficient more higher or lower than silica；The conductor region (50)
It is to be made of conductor material, the conductor material of the conductor region (50) is the polycrystalline semiconductor material or metal material of heavy doping
Material；The conductor material and the grid conductor (3) of the conductor region (50) are identical or different；
The drift region (20), the collecting zone (10), the base area (30), the buffer area (21) and the bonding pad
It (42) is made of the first semiconductor material；The emitter region (41) is made of second of semiconductor material；Described second
The forbidden bandwidth of kind semiconductor material is higher than the forbidden bandwidth of the first semiconductor material；
Pass through the two of a diode (100) or two series aiding connections between the base area (30) and the emitter (E)
The diode (103) of pole pipe (101 and 102) or more than two series aiding connections is connected；Between the base area (30) and emitter (E)
Diode (100,101 and 102,103) forward conduction current direction and the base area (30) and the emitter region (41) structure
At hetero-junctions forward conduction current direction it is identical；The hetero-junctions that the base area (30) and the emitter region (41) are constituted is just
It is greater than the positive guide of diode (100,101 and 102,103) access between the base area (30) and emitter E to conducting voltage
Be powered pressure；
When first conduction type is N-type, second conduction type is p-type, the base area (30) and emitter
(E) hetero-junctions that the forward conduction current direction of the diode between and the base area (30) and the emitter region (41) are constituted
Forward current conducting direction is all to flow to the emitter (E) from the base area (30)；When first conduction type is p-type,
Second conduction type is N-type, the forward conduction current direction of the diode between the base area (30) and emitter (E)
Forward conduction current direction with the base area (E) and the emitter region (41) hetero-junctions constituted is all from the emitter
(E) base area (30) are flowed to.
Further, the gate structure (being made of 50 and 90) is planar gate structure or slot grid structure；
When the first described semiconductor material is Si, second of semiconductor material is SiC or GaN or SiCN or Buddha's warrior attendant
Stone or GaAs；When the first described semiconductor material is Ge, second of semiconductor material be Si or SiC or GaN or
SiCN or diamond or GaAs；When the first described semiconductor material is GaAs, second of semiconductor material be SiC or
GaN or SiCN or diamond；Second of semiconductor material is monocrystal material or polycrystalline material or non-crystalline material.
Diode between the base area (30) and emitter (E) is integrated in the diode of chip interior or external
Diode；Diode between the base area (30) and emitter (E) is PN diode Schottky diode or Xiao PN-
The special compound diode of base；The diode fabrication for being integrated in chip interior cellular region or be produced on except cellular region its
His region；
The shape of the cellular of the insulated-gate bipolar transistor device is bar shaped or hexagon or circle or square configuration,
Arrangement mode is bar shaped or hexagon or circle or square ways.
Further, the diode between the base area (30) and emitter (E) is to be produced on a poly semiconductor area (51
And 52,53 and 54,55 and 56,57 and 58) in Schottky diode, poly semiconductor area (51 and 52,53 and 54,55
And it 56,57 and 58) is made of the first semiconductor material；
The poly semiconductor area (51 and 52,53 and 54,55 and 56,57 and 58) by insulating medium layer (91,
92) it is isolated with the base area (30), the emitter region (41) and the drift region (20)；The poly semiconductor area (51 and
52,53 and 54,55 and 56,57 and 58) be to go deep into the base area (30) or/and the emitter region (41) or/and the drift region
(20) intracorporal trench structure, or it is located at the base area (30) or/and the emitter region (41) or/and the drift region (20)
The planarized structure on surface；The poly semiconductor area (51 and 52,53 and 54,55 and 56,57 and 58) is the first conduction type
Poly semiconductor area (51 and 52,55 and 56) or the second conduction type poly semiconductor area (53 and 54,57 and 58)；
The poly semiconductor area (51 and 52,53 and 54,55 and 56,57 and 58) is that the polycrystalline of the first conduction type is partly led
When body area (51 and 52,55 and 56), comprising at least in the poly semiconductor area (51 and 52,55 and 56) of first conduction type
The poly semiconductor area (51,55) of one the first conduction type compared with heavy doping and at least one first conduction type being lightly doped
Poly semiconductor area (52,56), the poly semiconductor area (51,55) of first conduction type compared with heavy doping is at least partly
It is directly contacted with the poly semiconductor area (52,56) of first conduction type being lightly doped；First compared with heavy doping is led
It is covered with a conductor (61,65) in the poly semiconductor area (51,55) of electric type and forms the electrode with Ohmic contact, it is described
It is described compared with the electrode (61,65) in the poly semiconductor area (51,55) of the first conduction type of heavy doping with Ohmic contact
First conductive electrode of the Schottky diode in poly semiconductor area (51 and 52,55 and 56)；
A conductor (62,66) are covered in the poly semiconductor area (52,56) of first conduction type being lightly doped
The electrode with Schottky contacts is formed, is had in the poly semiconductor area (52,56) of first conduction type being lightly doped
The electrode (62,66) of Schottky contacts is of the Schottky diode in the poly semiconductor area (51 and 52,55 and 56)
Two conductive electrodes；
The poly semiconductor area (51 and 52,53 and 54,55 and 56,57 and 58) is that the polycrystalline of the second conduction type is partly led
When body area (53 and 54,57 and 58), comprising at least in the poly semiconductor area (53 and 54,57 and 58) of second conduction type
The poly semiconductor area (54,58) of one the second conduction type compared with heavy doping and at least one second conduction type being lightly doped
Poly semiconductor area (53,57), the poly semiconductor area (54,58) of second conduction type compared with heavy doping is at least partly
It is directly contacted with the poly semiconductor area (53,57) of second conduction type being lightly doped；Second compared with heavy doping is led
It is covered with a conductor (64,68) in the poly semiconductor area (54,58) of electric type and forms the electrode with Ohmic contact, it is described
It is described compared with the electrode (64,68) in the poly semiconductor area (54,58) of the second conduction type of heavy doping with Ohmic contact
Second conductive electrode of the Schottky diode in poly semiconductor area (53 and 54,57 and 58)；Second be lightly doped is led
It is covered with a conductor (63,67) in the poly semiconductor area (53,57) of electric type and forms the electrode with Schottky contacts, institute
The electrode (63,67) stated in the poly semiconductor area (53,57) for the second conduction type being lightly doped with Schottky contacts is institute
State the first conductive electrode of the Schottky diode in poly semiconductor area (53 and 54,57 and 58)；
(30) are covered with a conductor (4) and form the base stage (B) with Ohmic contact, the base stage (B) on the base area
Pass through second of the Schottky diode in conducting wire and the poly semiconductor area (51 and 52,53 and 54,55 and 56,57 and 58)
Conductive electrode (62,64,66,68) is connected, and the emitter (E) passes through conducting wire and the poly semiconductor area (51 and 52,53
And 54,55 and 56,57 and 58) in the first conductive electrode (61,63,65,67) of Schottky diode be connected.
Further, the diode between the base area (30) and emitter (E) is to be produced on a poly semiconductor area (71
And 72,73 and 74,75 and 76) in PN diode, the poly semiconductor area is made of the first semiconductor material；
The poly semiconductor area (71 and 72,73 and 74,75 and 76) by insulating medium layer (91,92) with it is described
Base area (30), the emitter region (41) and the drift region (20) are isolated；The poly semiconductor area (71 and 72,73 and 74,
75 and 76) be to go deep into the base area (30) or/and the emitter region (41) or/and the drift region (20) intracorporal groove profile knot
Structure, or it is located at the plane knot on the base area (30) or/and the emitter region (41) or/and the drift region (20) surface
Structure；Polycrystalline in the poly semiconductor area (71 and 72,73 and 74,75 and 76) comprising at least one the first conduction type is partly led
The poly semiconductor area (72,74,76) in body area (71,73,75) and at least one the second conduction type, first conduction type
Poly semiconductor area (71,73,75) at least part and second conduction type poly semiconductor area (72,74,76)
Directly contact；
A conductor (81,83,85) shape is covered in the poly semiconductor area (71,73,75) of first conduction type
At the electrode with Ohmic contact, with Ohmic contact in the poly semiconductor area (71,73,75) of first conduction type
Electrode (81,83,85) is the first conduction of the PN diode in the poly semiconductor area (71 and 72,73 and 74,75 and 76)
Electrode；It is covered with a conductor (82,84,86) in the poly semiconductor area (72,74,76) of second conduction type and forms tool
There are the electrode of Ohmic contact, the electrode with Ohmic contact in the poly semiconductor area (72,74,76) of second conduction type
(82,84,86) are the second conductive electrodes of the PN diode in the poly semiconductor area (71 and 72,73 and 74,75 and 76)；
The base area (30) is covered with a conductor (4) and forms the base stage (B) with Ohmic contact, and the base stage (B) is logical
Cross the PN diode in conducting wire and the poly semiconductor area (71 and 72,73 and 74,75 and 76) the second conductive electrode (82,
84,86) it is connected, the emitter (E) passes through in conducting wire and the poly semiconductor area (71 and 72,73 and 74,75 and 76)
The first conductive electrode (81,83,85) of PN diode be connected.
Further, the diode between the base area (30) and emitter (E) is Xiao being produced in the base area (30)
Special based diode；
It is covered with a conductor (5) on the base area (30) and forms the base stage (B) with Schottky contacts, the base area
(30) base stage (B) on Schottky contacts is the first conductive electrode of the Schottky diode in the base area；The base
Pole (B) is connected by conducting wire with the emitter (E).
Further, the diode between the base area (30) and emitter (E) is the PN being produced in the base area (30)
Diode；
Semiconductor region (59) in the base area (30) containing at least one the first conduction type being lightly doped, the base area
(30) at least part is directly contacted with the semiconductor region (59) of first conduction type being lightly doped；In the base area (30)
The semiconductor region (59) of the first conduction type being lightly doped be to be made of the first semiconductor material；In the base area (30)
Being covered with a conductor (60) on the semiconductor region (59) for the first conduction type being lightly doped and being formed has Schottky contacts or Europe
The base stage (B) of nurse contact, the base stage (B) is the first conductive electrode of the PN diode in the base area (30)；The base stage
(B) it is connected by conducting wire with the emitter (E).
Further, the diode between the base area (30) and emitter (E) is produced on second conduction type
Schottky diode in semiconductor region (31), the semiconductor region (31) of second conduction type is by the first semiconductor material
It constitutes；
The semiconductor region (31) of second conduction type contacts with the drift region (20) and by a groove profile grid
Pole structure (being made of 50 and 90) or/and a groove typed insulation dielectric area (93) and the base area (30) and the emitter region
(41) it is isolated；Contain at least one the second conduction type being lightly doped in the semiconductor region (31) of second conduction type
Semiconductor region (32), the semiconductor region (31) of second conduction type at least part and second conductive-type being lightly doped
The semiconductor region (32) of type directly contacts；
Being covered with a conductor (6) on the semiconductor region (32) of second conduction type being lightly doped and being formed has Xiao Te
The electrode of base contact, with the electrode (6) of Schottky contacts on the semiconductor region (32) of second conduction type being lightly doped
It is the first conductive electrode of the Schottky diode in the semiconductor region (32) of second conduction type；Second conductive-type
It is covered with a conductor (7) on the semiconductor region (31) of type and forms the electrode with Ohmic contact, second conduction type
Electrode (7) on semiconductor region (31) with Ohmic contact is the Schottky in the semiconductor region (31) of second conduction type
Second conductive electrode of diode；
It is covered with a conductor (4) on the base area (30) and forms the base stage (B) with Ohmic contact；The base stage (B)
It is connected by conducting wire with the second conductive electrode (7) of the Schottky diode in the semiconductor region (31) of second conduction type
It connects, the of the Schottky diode in semiconductor region (31) that the emitter (E) passes through conducting wire and second conduction type
One conductive electrode (6) is connected.
Further, the diode between the base area (30) and emitter (E) is produced on second conduction type
PN diode in semiconductor region (33), the semiconductor region (33) of second conduction type is by the first semiconductor material structure
At；
The semiconductor region (33) of second conduction type contacts with the drift region (20) and by a groove profile grid
Pole structure (being made of 50 and 90) or/and a groove typed insulation dielectric area (93) and the base area (30) and the emitter region
(41) it is isolated；Contain at least one the first conduction type being lightly doped in the semiconductor region (33) of second conduction type
Semiconductor region (43), the semiconductor region (33) of second conduction type at least part and first conductive-type being lightly doped
The semiconductor region (43) of type directly contacts；
Being covered with a conductor (8) on the semiconductor region (43) of first conduction type being lightly doped and being formed has Xiao Te
Base contacts or the electrode of Ohmic contact, has Schottky contacts on the semiconductor region (43) of first conduction type being lightly doped
Or the electrode (8) of Ohmic contact is the first conductive electricity of the PN diode in the semiconductor region (33) of second conduction type
Pole；It is covered with a conductor (9) on the semiconductor region (33) of second conduction type and forms the electrode with Ohmic contact, institute
State the semiconductor that the electrode (9) on the semiconductor region (33) of the second conduction type with Ohmic contact is second conduction type
Second conductive electrode of the PN diode in area (33)；
It is covered with a conductor (4) on the base area (30) and forms the base stage (B) with Ohmic contact；The base stage (B)
It is connected by conducting wire with the second conductive electrode (9) of the PN diode in the semiconductor region (33) of second conduction type,
The first conductive electricity that the emitter (E) passes through the PN diode in the semiconductor region (33) of conducting wire and second conduction type
Pole (8) is connected.
Detailed description of the invention
Fig. 1: traditional NPT type and PT or FS type planar gate IGBT structure schematic diagram；
Fig. 2: a kind of NPT type planar gate IGBT of the invention has a diode between base area and emitter；
Fig. 3: a kind of PT or FS type planar gate IGBT of the invention has a diode between base area and emitter；
Fig. 4: another NPT type and PT or FS type planar gate IGBT of the invention, between base area and emitter there are two
The diode of series aiding connection；
Fig. 5: another NPT type and PT or FS type planar gate IGBT of the invention, between base area and emitter there are two
The diode of the above series aiding connection；
Fig. 6: another NPT type and PT or FS type planar gate IGBT of the invention has one between base area and emitter region
Bonding pad；
Fig. 7: according to fig. 2 and Fig. 3, a kind of NPT type of the invention and PT or FS type groove grid IGBT；
Fig. 8: according to Fig. 4, another NPT type of the invention and PT or FS type groove grid IGBT；
Fig. 9: according to Fig. 5, another NPT type of the invention and PT or FS type groove grid IGBT；
Figure 10: according to Fig. 6, another NPT type of the invention and PT or FS type groove grid IGBT；
Figure 11: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe is the Schottky diode being produced in an area groove profile N-Poly；
Figure 12: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe is the Schottky diode being produced in an area groove profile P-Poly；
Figure 13: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe is the Schottky diode being produced in the area plane N-Poly or the area P-Poly；
Figure 14: according to fig. 2, another NPT type groove grid IGBT of the invention, the diode between base area and emitter is
The PN diode being produced in an area groove profile N-Poly；
Figure 15: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe is the PN diode being produced in an area groove profile N-Poly；
Figure 16: according to fig. 2, another NPT type groove grid IGBT of the invention, the diode between base area and emitter is
The PN diode being produced in an area groove profile P-Poly；
Figure 17: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe is the PN diode being produced in an area groove profile P-Poly；
Figure 18: according to fig. 2 and Fig. 3, another NPT type of the invention and PT or FS type groove grid IGBT, base area and transmitting
Diode between pole is the PN diode being produced in an area plane Poly；
Figure 19: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe is the Schottky diode being produced in base area or PN diode；
Figure 20: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe be produced on one by slot barrier from the area P in Schottky diode；
Figure 21: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe is the Schottky diode being produced in the area P that one is isolated by groove profile dielectric area；
Figure 22: according to Fig. 3, another PT or FS type groove grid IGBT of the invention, two poles between base area and emitter
Pipe be produced on one by slot barrier from the area P in PN diode；
Figure 23: according to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base area is production
Schottky diode in base area, the diode being connected with emitter are the Schottky being produced in an area groove profile N-Poly
Diode；
Figure 24: according to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base area is production
Schottky diode in base area, the diode being connected with emitter are bis- pole PN being produced in an area groove profile Poly
Pipe；
Figure 25: according to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base area is production
Schottky diode in base area, the diode being connected with emitter are the Schottky being produced in an area plane Poly
Diode or PN diode；
Figure 26: according to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base area is production
Schottky diode in base area, the diode being connected with emitter be produced on one with by slot barrier from the area P in
Schottky diode；
In Figure 27: Fig. 8 in FS type groove grid IGBT and Fig. 1 of the invention tradition FS type groove grid IGBT I-V characteristic curve；
The carrier concentration of tradition FS type groove grid IGBT is divided in FS type groove grid IGBT and Fig. 1 of the invention in Figure 28: Fig. 8
Cloth；
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing.
In Fig. 1, what (a) figure on the left side provided is traditional NPT (Non Punch Through, non-break-through) type planar gate
IGBT structure schematic diagram, what (b) figure on the right provided be traditional PT (Punch Through, break-through) or FS (Field Stop,
Field cut-off) type groove grid IGBT structure schematic diagram, wherein FS type IGBT is also referred to as SPT (Soft Punch Trough, soft break-through) type
IGBT or LPT) (Light Punch Through, weak break-through) type IGBT.In general, IGBT can be divided into plane by gate structure
Grid and slot grid can be divided into NPT type, PT type and FS type by collecting zone-drift region structure.Compared with planar gate IGBT, slot grid
IGBT has lacked the area JFET, thus cellular density can be bigger, and conductive capability can be stronger.In the resistance to pressure of highest, NPT type IGBT's
Drift region (area n- 20) does not exhaust all usually, and the drift region (area n- 20) of PT type or FS type IGBT usually all exhaust.
The main distinction of PT type IGBT and FS type IGBT is that the manufacturing process of the two is different, and the manufacture of PT type IGBT is in Yi Ji
Electric area (area p 10) is epitaxial buffer area (area n 21) on the basis of substrate material, then extension drift region (area n- 20) again, and FS
Type IGBT is to form buffer area with ion implantation doping process respectively on the basis of being substrate material with drift region (area n- 20)
(area n 21) and collecting zone (area p 10).It is readily apparent that from the difference of manufacturing process, the collecting zone (area p 10) and buffering of PT type IGBT
Area (area n 21) would generally respectively the collecting zone than FS type IGBT (area p 10) and buffer area (area n 21) it is thicker, dopant dose also can
It is higher.
In Fig. 1, when IGBT forward conduction, the PN junction that base area (area p-base 30) is formed with drift region (area n- 20) is
It is reverse-biased, thus minority carrier compares close to the carrier concentration of base area (area p-base 30) nearby in drift region (area n- 20)
It is low, biggish voltage drop is had on this partial region.The main object of the present invention is to improve minority carrier close
The storage effect of base area (area p-base 30) nearby, to reduce the conduction voltage drop of IGBT.
Technical characteristic of the invention is mainly reflected in emitter region (n+Area 41) this side, technology of the invention is suitable for NPT
Any one of type, PT type and FS type IGBT, are also applied for any one of planar gate and slot grid IGBT.
In Fig. 2, emitter region (n+Area 41) using the semiconductor with forbidden bandwidth higher than other semiconductor regions
Material.If other semiconductor regions are using Si material, emitter region (n+Area 41) SiC (3C-SiC, 4H- can be used
SiC, 6H-SiC etc.), GaN, SiCN, diamond, the higher semiconductor material of forbidden bandwidths ratio Si such as GaAs, emitter region (n+Area
41) monocrystalline, polycrystalline or non-crystalline material be can be.Emitter region (n+Area 41) PN heterojunction that is formed with base area (area p-base 30)
The forward conduction voltage of forward conduction voltage (about 0.7V) and Si schottky junction that forward conduction voltage is higher than Si PN junction (leads to
Often less than 0.7V).It is connect between emitter (E) and base area (area p-base 30) by a diode (100), diode
(100) it can integrate and chip interior, can also be external, it is compound to can be PN diode, Schottky diode, PN- Schottky
Type diode (such asJunction Barrier SChottky diode,Merged PiN SChottky diode) or it is other
The diode of type.For Si diode, conducting voltage about 0.7V or be less than 0.7V.When diode 100 is connected, transmitting
Area (n+Area 41) PN heterojunction that is formed with base area (area p-base 30) do not turn on usually, thus electronic current is still by grid
(G) control.In forward conduction, electronic current is to enter emitter region (n from emitter (E)+Area 41), by by grid (G)
The channel of control enters drift region (area n- 20), enters back into collecting zone (area p 10) and flows to collector (C)；Hole is from collector
(C) enter collecting zone (area p 10), enter back into drift region (area n- 20), collected by base area (area p-base 30) and pass through diode
100 flow to emitter (E).In forward conduction, the current potential of emitter (E) is 0V, if the forward conduction voltage of diode 100
It is 0.7V, then the current potential in base area (area p-base 30) is 0.7V；If the pressure drop on channel is 0.1V, drift region (area n- 20)
The current potential at top is 0.1V.At this moment, the PN junction that base area (area p-base 30) and drift region (area n- 20) is formed has the forward direction of 0.6V
Pressure drop, hole, which enters base area (area p-base 30), becomes more difficult, storage effect of the hole at the top of drift region (area n- 20)
Also it can become more apparent upon, conduction voltage drop can also reduce.
In Fig. 3, it is have between collecting zone (area p 10) and drift region (area n- 20) with the main distinction of the structure of Fig. 2
One buffer area (area n 21).
In Fig. 4, the main distinction of the structure of (a) figure and Fig. 2 on the left side is, in emitter (E) and base area (p-base
Area 30) between connected by the diodes (101 and 102) of two series aiding connections.Diode (101 Hes of two series aiding connections
102) any one diode in can be PN diode or Schottky diode or the compound diode of PN- Schottky,
The forward conduction voltage of diode (101 and 102) access of two series aiding connections is less than emitter region (n+Area 41) and base area (p-
The area base 30) formed PN heterojunction forward conduction voltage.In Fig. 4, the structure of (a) figure of (b) the figure and left side on the right
The main distinction be there be a buffer area (area n 21) between collecting zone (area p 10) and drift region (area n- 20).
In Fig. 5, be with the main distinction of counter structure in Fig. 4, emitter (E) and base area (area p-base 30) it
Between pass through diode (103) connections of more than two series aiding connections.Here in the diode (103) of more than two series aiding connections
Any one diode can be PN diode or Schottky diode or the compound diode of PN- Schottky, here
The forward conduction voltage of diode (103) access of more than two series aiding connections is less than emitter region (n+Area 41) and base area (p-
The area base 30) formed PN heterojunction forward conduction voltage.
In Fig. 6, the main distinction of the structure of (a) figure and Fig. 2 on the left side is, in emitter region (E) and base area (p-base
Area 30) between there are one bonding pad (area n 42).In Fig. 6, the main region of the structure of (a) figure of (b) the figure and left side on the right
It is not there is a buffer area (area n 21) between collecting zone (area p 10) and drift region (area n- 20).
In Fig. 7, the main distinction of the structure of (a) figure and Fig. 2 on the left side is, uses slot grid structure (by 50 and 90
Composition).Slot grid structure (being made of 50 and 90) gos deep into drift region (area n- 20) in vivo, and the bottom plane of conductor region (50) can be with
Maintain an equal level with the bottom plane in base area (area p-base 30), the bottom plane in base area (area p-base 30) can also be lower than.In Fig. 7
In, the main distinction of the structure of (a) figure of (b) the figure and left side on the right is, collecting zone (area p 10) and drift region (area n- 20)
Between have a buffer area (area n 21).
In fig. 8, the main distinction with counter structure in Fig. 4 is, uses slot grid structure (being made of 50 and 90).
In Fig. 9, it is with the main distinction of counter structure in Fig. 5, uses slot grid structure (being made of 50 and 90).
In Figure 10, it is with the main distinction of counter structure in Fig. 6, uses slot grid structure (being made of 50 and 90).
What Figure 11 was provided is that diode between emitter (E) and base area (area p-base 30) is integrated in the one of chip interior
Kind of situation, diode are the Schottky diodes being produced in the area groove profile N-poly, the area N-poly by an insulating layer 91 with
Other zone isolations.The area N-poly is made of the area n (51) and the area n- (52), and conductor (61) is contacted with the area n (51) to be formed ohm and connect
Touching, conductor (62) contact to form Schottky contacts with the area n- (52), and conductor (62) is the anode of Schottky diode, conductor (61)
It is the cathode of Schottky diode.Conductor (4) contacts to form Ohm contact electrode (base stage B), base with base area (area p-base 30)
Pole (B) is connected by the anode (conductor 62) of conducting wire and Schottky diode, and emitter (E) passes through conducting wire and Schottky diode
Cathode (conductor 61) connection.
In Figure 12, it is with the main distinction of the structure of Figure 11, between emitter (E) and base area (area p-base 30)
Diode is the Schottky diode being produced in the area groove profile P-poly.
In Figure 13, the main distinction of the structure of (a) figure and Figure 11 on the left side is, emitter (E) and base area (p-base
Area 30) between diode be the Schottky diode being produced in the area plane N-poly.In Figure 13, (b) figure on the right
Be with the main distinction of the structure of Figure 12, the diode between emitter (E) and base area (area p-base 30) be produced on it is flat
Schottky diode in the area Mian Xing P-poly.
What Figure 14 was provided is that diode between emitter (E) and base area (area p-base 30) is integrated in chip interior again
A kind of situation, diode are the PN diodes being produced in the area groove profile poly, and the area poly passes through an insulating layer 91 and other areas
Domain separation.The area poly is made of the area n (71) and the area p (72), and the area p (72) are surrounded by the area n (71), and conductor (81) connects with the area n (71)
Touching forms Ohmic contact, and conductor (82) contacts to form Ohmic contact with the area p (72), and conductor (82) is the anode of PN diode, leads
Body (81) is the cathode of PN diode.Conductor (4) contacts to form Ohm contact electrode (base stage B) with base area (area p-base 30),
Base stage (B) is connect by conducting wire with the anode (conductor 82) of PN diode, and emitter E passes through the cathode of conducting wire and PN diode
(conductor 81) connection.
In Figure 15, it is with the main distinction of the structure of Figure 14, between collecting zone (area p 10) and drift region (area n- 20)
There can also be a buffer area (area n 21).
In Figure 16, it is with the main distinction of the structure of Figure 14, the PN diode structure in the area poly is the area n (73)
It is surrounded by the area p (74).
In Figure 17, it is with the main distinction of the structure of Figure 16, between collecting zone (area p 10) and drift region (area n- 20)
There can also be a buffer area (area n 21).
In Figure 18, the main distinction of the structure of (a) figure and Figure 15 on the left side is, emitter (E) and base area (p-base
Area 30) between diode be the PN diode being produced in the area plane poly.In Figure 18, (b) figure on the right and the left side
The main distinction of structure of (a) figure be there is a buffer area (area n between collecting zone (area p 10) and drift region (area n- 20)
21)。
What Figure 19 was provided is that diode between emitter (E) and base area (area p-base 30) is integrated in chip interior again
A kind of situation, diode are the Schottky diodes or PN diode made in base area (area p-base 30).A left side in Figure 19
In (a) figure on side, conductor (5) contacts to be formed Schottky contact electrode (base stage B) with base area (area p-base 30), and conductor (5) is
The cathode of Schottky diode, emitter (E) are connected by the cathode (conductor 5) of conducting wire and Schottky diode.In Figure 19
The right (b) figure in, in base area (area the p-base 30) area Zhong Youyige n- (59), conductor (60) contacts formation with the area n- (59)
Schottky contacts or Ohmic contact, conductor (60) are the cathodes of PN diode, and emitter (E) passes through conducting wire and Schottky diode
Cathode (conductor 60) connection.It should be added that when being Schottky contacts on the area n- (59), the condition of PN junction conducting
It is to need the area n- (59) that break-through occurs；In addition, due to dopant dose the mixing much smaller than base area (area p-base 30) of the area n- (59)
Miscellaneous dosage, when PN junction conducting almost few electron injections to base area (area p-base 30).
What Figure 20 was provided is that diode between emitter (E) and base area (area p-base 30) is integrated in chip interior again
A kind of situation, diode be make one by slot grid structure be isolated with base area (area p-base 30) in the area p (31) Schottky
Diode.In the area p (31) area Zhong Youyige p- (32), conductor (6) contacts to form Schottky contacts with the area p- (32), conductor (7)
It contacts to form Ohmic contact with the area p (31).Conductor (7) is the anode of Schottky diode, and conductor (6) is Schottky diode
Cathode, conductor (4) contact to be formed Ohm contact electrode (base stage B) with base area (area p-base 30), and base stage (B) passes through conducting wire and Xiao
The anode (conductor 7) of special based diode connects, and emitter (E) is connected by the cathode (conductor 6) of conducting wire and Schottky diode.
In Figure 21, it is with the main distinction of the structure of Figure 20, the area p (31) pass through a dielectric area (93) and grid
Structure (being made of 50 and 90) and base area (area p-base 30) isolation.
What Figure 22 was provided is that diode between emitter (E) and base area (area p-base 30) is integrated in chip interior again
A kind of situation, diode are to make the PN bis- passed through in the area p (33) that slot grid structure is isolated with base area (area p-base 30)
Pole pipe.In the area p (33) area Zhong Youyige n- (43), conductor (8) contacts to form Schottky contacts or Ohmic contact with the area n- (43),
Conductor (9) contacts to form Ohmic contact with the area p (33).Conductor (9) is the anode of PN diode, and conductor (8) is PN diode
Cathode.Conductor (4) contacts to be formed Ohm contact electrode (base stage B) with base area (area p-base 30), and base stage (B) passes through conducting wire and PN
The anode (conductor 9) of diode connects, and emitter (E) is connected by the cathode (conductor 8) of conducting wire and Schottky diode.
What Figure 23 was provided be two series aiding connections between emitter (E) and base area (area p-base 30) diode it is integrated
A kind of situation in portion in the chip, first diode be make base area (area p-base 30) in Schottky diode, second
A diode is the Schottky diode being produced in the area groove profile poly.Conductor (5) contacts formation with base area (area p-base 30)
Schottky contact electrode (base stage B), base stage (B) are the cathodes of first diode.By an area n (51) and one in the area poly
The area n- (52) is constituted, and conductor (61) and the area n (51) form Ohmic contact, and conductor (62) and the area n- (52) form Schottky contacts,
Conductor (61) is the cathode of second diode, and conductor (62) is the anode of second diode.The cathode of first diode
(base stage B or conductor 5) is connected by conducting wire with the anode (conductor 62) of second diode, and emitter (E) passes through conducting wire and the
The cathode (conductor 61) of two diodes is connected.
In Figure 24, it is with the main distinction of the structure of Figure 23, second diode is produced in the area groove profile poly
PN diode.
In Figure 25, the main distinction of the structure of (a) figure and Figure 23 on the left side is, second diode be produced on it is flat
Schottky diode in the area Mian Xing poly.In Figure 25, the main distinction of the structure of (b) figure and Figure 24 on the right is, the
Two diodes are the PN diodes being produced in the area plane poly.
In Figure 26, it is with the main distinction of the structure of Figure 23, second diode is to be produced on one by slot grid
The Schottky diode in the area p (31) that structure is isolated with base area (area p-base 30).
Superiority in order to illustrate IGBT of the invention relative to traditional IGBT (Fig. 1), here with the FS type groove grid in Fig. 8
Numerical simulation meter is made with traditional FS type groove grid IGBT ((b) figure in Fig. 1) in Fig. 1 for IGBT structure ((b) figure in Fig. 8)
The comparison of calculation.Numerical simulation is using MEDICI simulation software.Setting in emulation is as follows, and Fig. 1 structure is using Si material
Material, Fig. 8 structure is also mainly using Si material, only emitter region (n+Area 41) using 3C-SiC material, emulation uses
Be half of cellular (right-hand component of the central symmetry axis of structure chart), the minority carrier life time of electrons and holes is 50 μ s, half
The width of cellular is 5 μm, and conductor region (50) using n-poly, width and thickness is respectively 1.9 μm and 2.9 μm, insulation
Layer (90) is using SiO2, with a thickness of 0.1 μm, width, thickness and the doping concentration in base area (area p-base 30) are respectively 3
μm, 2.5 μm and 3 × 1017cm-3, emitter region (n+Area 41 and n+Area 40) width, thickness and doping concentration be respectively 0.8 μm, 1 μ
M and 2 × 1019cm-3, the thickness and doping concentration in drift region (area n- 20) are respectively 300 μm and 2 × 1013cm-3, the buffer area (area n
21) thickness and doping concentration is respectively 2 μm and 1 × 1016cm-3, the thickness and doping concentration of collecting zone (area p 10) are respectively 1
μm and 5 × 1018cm-3.Two diodes between the emitter (E) of (b) figure in Fig. 8 and base area (area p-base 30) exist
100A/cm2Under conducting voltage be 0.41V.The breakdown voltage that emulation obtains traditional FS type groove grid IGBT in Fig. 1 is
The breakdown voltage of FS type groove grid IGBT of the invention is 3315V in 3320V, Fig. 8, and the two is almost the same.
What Figure 27 was provided is the positive guide of tradition FS type groove grid IGBT in FS type groove grid IGBT and Fig. 1 of the invention in Fig. 8
Logical I-V curve, the grid voltage that the two applies is 15V.From the figure, it can be seen that in 100A/cm2Under, slot grid of the invention in Fig. 8
The conduction voltage drop of IGBT be 1.56V, the conduction voltage drop (1.75V) than traditional slot grid IGBT in Fig. 1 is about 0.2V low, this be one not
Small improvement.
What Figure 28 was provided is tradition FS type groove in Fig. 8 is of the invention under 1.6V conducting voltage FS type groove grid IGBT and Fig. 1
Hole concentration in the drift region (area n- 20) of grid IGBT is along the distribution on the right margin of structure chart.It can be seen from the figure that
The carrier of FS type groove grid IGBT of the invention is in the close storage effect of base area (area p-base 30) nearby obviously than figure in Fig. 8
It is stronger in tradition FS type groove grid IGBT in 1, this be also FS type groove grid IGBT of the invention in Fig. 8 conduction voltage drop ratio Fig. 1 in pass
The lower reason of conduction voltage drop of system FS type groove grid IGBT.
Many embodiments have been done to the present invention above to illustrate, described in n-type semiconductor be considered as the first conduction
The semiconductor material of type, and p-type semiconductor material is considered as the semiconductor material of the second conduction type, the cathode of diode
It can regard the first conductive electrode of diode as, and the anode of diode can regard the second conductive electrode of diode as.Obviously,
Principle according to the present invention, the N-shaped in embodiment can be mutually right with the second conductive electrode with p-type and the first conductive electrode
It adjusts without influencing the contents of the present invention.For those skilled in the art, it can also be obtained under thought of the invention
To other many embodiments without departing from claim of the invention.
Claims (8)
1. a kind of insulated-gate bipolar transistor device, structure cell includes: the drift region for the first conduction type being lightly doped,
With the collecting zone for the second conduction type of the drift region being in contact on one side, to be in contact with the another side of the drift region
The base area of two conduction types, the emitter region of the first conduction type of the heavy doping at least partially contacted with the base area, with institute
The gate structure that emitter region, the base area and the drift region contact is stated, the conductor formation of the collecting zone is covered in
Collector is covered in the emitter formed with the conductor of the emitter region, is covered in the grid that the conductor of the gate structure is formed
Pole, it is characterised in that:
The drift region of first conduction type being lightly doped and the collecting zone of second conduction type be directly contact or
Pass through the buffer area mediate contact of first conduction type；
The emitter region of first conduction type of the heavy doping is directly to contact or lead to the base area of second conduction type
Cross the bonding pad mediate contact of first conduction type；
The gate structure includes at least one insulating medium layer and at least one conductor region, the insulating medium layer and the hair
Area, the base area and the drift region is penetrated directly to contact；The another side of the insulating medium layer and the conductor region are direct
Contact, the another side of the conductor region are directly contacted with the grid conductor；The insulating medium layer is by insulating dielectric materials
It constitutes, the insulating dielectric materials are silica or the medium material with dielectric coefficient more higher or lower than silica
Material；The conductor region is made of conductor material, the conductor material of the conductor region be heavy doping polycrystalline semiconductor material or
It is metal material；The conductor material and the grid conductor of the conductor region are identical or different；
The drift region, the collecting zone, the base area, the buffer area and the bonding pad are by the first semiconductor material
It constitutes；The emitter region is made of second of semiconductor material；The forbidden bandwidth of second of semiconductor material is higher than institute
State the forbidden bandwidth of the first semiconductor material；
Pass through the diode or more than two same of a diode or two series aiding connections between the base area and the emitter
It is connected to concatenated diode；The forward conduction current direction of diode between the base area and emitter and the base area with
The forward conduction current direction for the hetero-junctions that the emitter region is constituted is identical；The hetero-junctions that the base area and the emitter region are constituted
Forward conduction voltage be greater than the forward conduction voltage of diode paths between the base area and emitter；
First conduction type be N-type when, second conduction type be p-type, two between the base area and emitter
The forward current conducting direction for the hetero-junctions that the forward conduction current direction of pole pipe and the base area and the emitter region are constituted is all
It is to flow to the emitter from the base area；When first conduction type is p-type, second conduction type is N-type, institute
The forward conduction current direction and the base area for stating the diode between base area and emitter constitute heterogeneous with the emitter region
The forward conduction current direction of knot is all to flow to the base area from the emitter.
2. a kind of insulated-gate bipolar transistor device as described in claim 1, it is characterised in that:
The gate structure is planar gate structure or slot grid structure；
When the first described semiconductor material is Si, second of semiconductor material be SiC or GaN or SiCN or diamond or
GaAs；When the first described semiconductor material is Ge, second of semiconductor material be Si or SiC or GaN or SiCN or
Diamond or GaAs；When the first described semiconductor material is GaAs, second of semiconductor material be SiC or GaN or
SiCN or diamond；Second of semiconductor material is monocrystal material or polycrystalline material or non-crystalline material；
Diode between the base area and emitter is integrated in the diode or external diode of chip interior；It is described
Diode between base area and emitter is PN diode Schottky diode or the compound diode of PN- Schottky；
The diode fabrication for being integrated in chip interior is in cellular region or the region being produced on except cellular region；
The shape of the cellular of the insulated-gate bipolar transistor device is bar shaped or hexagon or circle or square configuration, arrangement
Mode is bar shaped or hexagon or circle or square ways.
3. a kind of insulated-gate bipolar transistor device as described in claim 1, it is characterised in that:
Diode between the base area and emitter is the Schottky diode being produced in a poly semiconductor area, described
Poly semiconductor area is made of the first semiconductor material；
The poly semiconductor area is separated by by an insulating medium layer and the base area, the emitter region and the drift region
From；The poly semiconductor area is to go deep into the intracorporal groove profile knot of the base area or/and the emitter region or/and the drift region
Structure, or the planarized structure positioned at the base area or/and the emitter region or/and the drift region surface；The polycrystalline half
Conductor region is the poly semiconductor area of the first conduction type or the poly semiconductor area of the second conduction type；
When the poly semiconductor area is the poly semiconductor area of the first conduction type, the polycrystalline of first conduction type is partly led
In body area comprising at least one compared with the first conduction type of heavy doping poly semiconductor area and at least one be lightly doped first
The poly semiconductor area of conduction type, the poly semiconductor area compared with the first conduction type of heavy doping at least partly with it is described
The poly semiconductor area for the first conduction type being lightly doped directly contacts；The polycrystalline of first conduction type compared with heavy doping half
It is covered with a conductor on conductor region and forms the electrode with Ohmic contact, the polycrystalline of first conduction type compared with heavy doping
Electrode on semiconductor region with Ohmic contact is the first conductive electrode of the Schottky diode in the poly semiconductor area；
It is covered with a conductor in the poly semiconductor area of first conduction type being lightly doped and forms the electricity with Schottky contacts
Pole, the electrode in the poly semiconductor area of first conduction type being lightly doped with Schottky contacts is that the polycrystalline is partly led
Second conductive electrode of the Schottky diode in body area；
When the poly semiconductor area is the poly semiconductor area of the second conduction type, the polycrystalline of second conduction type is partly led
In body area comprising at least one compared with the second conduction type of heavy doping poly semiconductor area and at least one be lightly doped second
The poly semiconductor area of conduction type, the poly semiconductor area compared with the second conduction type of heavy doping at least partly with it is described
The poly semiconductor area for the second conduction type being lightly doped directly contacts；The polycrystalline of second conduction type compared with heavy doping half
It is covered with a conductor on conductor region and forms the electrode with Ohmic contact, the polycrystalline of second conduction type compared with heavy doping
Electrode on semiconductor region with Ohmic contact is the second conductive electrode of the Schottky diode in the poly semiconductor area；
It is covered with a conductor in the poly semiconductor area of second conduction type being lightly doped and forms the electricity with Schottky contacts
Pole, the electrode in the poly semiconductor area of second conduction type being lightly doped with Schottky contacts is that the polycrystalline is partly led
First conductive electrode of the Schottky diode in body area；
It is covered with a conductor on the base area and forms the base stage with Ohmic contact, the base stage passes through conducting wire and the polycrystalline
Second conductive electrode of the Schottky diode in semiconductor region is connected, and the emitter is partly led by conducting wire with the polycrystalline
First conductive electrode of the Schottky diode in body area is connected.
4. a kind of insulated-gate bipolar transistor device as described in claim 1, it is characterised in that:
Diode between the base area and emitter is the PN diode being produced in a poly semiconductor area, the polycrystalline
Semiconductor region is made of the first semiconductor material；
The poly semiconductor area is separated by by an insulating medium layer and the base area, the emitter region and the drift region
From；The poly semiconductor area is to go deep into the intracorporal groove profile knot of the base area or/and the emitter region or/and the drift region
Structure, or the planarized structure positioned at the base area or/and the emitter region or/and the drift region surface；The polycrystalline half
The polycrystalline half in poly semiconductor area and at least one the second conduction type in conductor region comprising at least one the first conduction type
Conductor region, the poly semiconductor of the poly semiconductor area of first conduction type at least part and second conduction type
Area directly contacts；
It is covered with a conductor in the poly semiconductor area of first conduction type and forms the electrode with Ohmic contact, it is described
Electrode in the poly semiconductor area of first conduction type with Ohmic contact is the PN diode in the poly semiconductor area
The first conductive electrode；Being covered with a conductor in the poly semiconductor area of second conduction type and being formed has Ohmic contact
Electrode, the electrode in the poly semiconductor area of second conduction type with Ohmic contact is in the poly semiconductor area
PN diode the second conductive electrode；
The base area is covered with a conductor and forms the base stage with Ohmic contact, and the base stage passes through conducting wire and the polycrystalline half
Second conductive electrode of the PN diode in conductor region is connected, and the emitter passes through in conducting wire and the poly semiconductor area
The first conductive electrode of PN diode be connected.
5. a kind of insulated-gate bipolar transistor device as described in claim 1, it is characterised in that:
Diode between the base area and emitter is the Schottky diode being produced in the base area；
It is covered with a conductor on the base area and forms the base stage with Schottky contacts, there are Schottky contacts on the base area
Base stage be the Schottky diode in the base area the first conductive electrode；The base stage passes through conducting wire and the emitter phase
Connection.
6. a kind of insulated-gate bipolar transistor device as described in claim 1, it is characterised in that:
Diode between the base area and emitter is the PN diode being produced in the base area；
Semiconductor region containing at least one the first conduction type being lightly doped in the base area, the base area at least part with
The semiconductor region of first conduction type being lightly doped directly contacts；The first conduction type being lightly doped in the base area
Semiconductor region is made of the first semiconductor material；On the semiconductor region of the first conduction type being lightly doped in the base area
It is covered with a conductor and forms the base stage with Schottky contacts or Ohmic contact, the base stage is bis- pole PN in the base area
First conductive electrode of pipe；The base stage is connected by conducting wire with the emitter.
7. a kind of insulated-gate bipolar transistor device as described in claim 1, it is characterised in that:
Diode between the base area and emitter is the Schottky being produced in the semiconductor region of second conduction type
The semiconductor region of diode, second conduction type is made of the first semiconductor material；
The semiconductor region of second conduction type contacts with the drift region and by a groove profile gate structure or/and one
A groove typed insulation dielectric area is isolated with the base area and the emitter region；Contain in the semiconductor region of second conduction type
The semiconductor region for the second conduction type for thering is at least one to be lightly doped, the semiconductor region at least part of second conduction type
It is directly contacted with the semiconductor region of second conduction type being lightly doped；
It is covered with a conductor on the semiconductor region of second conduction type being lightly doped and forms the electricity with Schottky contacts
Pole, the electrode on the semiconductor region of second conduction type being lightly doped with Schottky contacts is second conduction type
Semiconductor region in Schottky diode the first conductive electrode；One is covered on the semiconductor region of second conduction type
A conductor forms the electrode with Ohmic contact, and the electrode with Ohmic contact is on the semiconductor region of second conduction type
Second conductive electrode of the Schottky diode in the semiconductor region of second conduction type；
It is covered with a conductor on the base area and forms the base stage with Ohmic contact；The base stage passes through conducting wire and described second
Second conductive electrode of the Schottky diode in the semiconductor region of conduction type is connected, and the emitter passes through conducting wire and institute
The first conductive electrode for stating the Schottky diode in the semiconductor region of the second conduction type is connected.
8. a kind of insulated-gate bipolar transistor device as described in claim 1, it is characterised in that:
Diode between the base area and emitter is bis- pole PN being produced in the semiconductor region of second conduction type
Pipe, the semiconductor region of second conduction type are made of the first semiconductor material；
The semiconductor region of second conduction type contacts with the drift region and by a groove profile gate structure or/and one
A groove typed insulation dielectric area is isolated with the base area and the emitter region；Contain in the semiconductor region of second conduction type
The semiconductor region for the first conduction type for thering is at least one to be lightly doped, the semiconductor region at least part of second conduction type
It is directly contacted with the semiconductor region of first conduction type being lightly doped；
Being covered with a conductor on the semiconductor region of first conduction type being lightly doped and being formed has Schottky contacts or Europe
The electrode of nurse contact, the electricity on the semiconductor region of first conduction type being lightly doped with Schottky contacts or Ohmic contact
Pole is the first conductive electrode of the PN diode in the semiconductor region of second conduction type；The half of second conduction type
It is covered with a conductor on conductor region and forms the electrode with Ohmic contact, has on the semiconductor region of second conduction type
The electrode of Ohmic contact is the second conductive electrode of the PN diode in the semiconductor region of second conduction type；
It is covered with a conductor on the base area and forms the base stage with Ohmic contact；The base stage passes through conducting wire and described second
Second conductive electrode of the PN diode in the semiconductor region of conduction type is connected, and the emitter passes through conducting wire and described the
First conductive electrode of the PN diode in the semiconductor region of two conduction types is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404322.6A CN107134488B (en) | 2017-06-01 | 2017-06-01 | A kind of insulated gate bipolar transistor of carrier storage enhancing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404322.6A CN107134488B (en) | 2017-06-01 | 2017-06-01 | A kind of insulated gate bipolar transistor of carrier storage enhancing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107134488A CN107134488A (en) | 2017-09-05 |
| CN107134488B true CN107134488B (en) | 2019-10-01 |
Family
ID=59733449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710404322.6A Expired - Fee Related CN107134488B (en) | 2017-06-01 | 2017-06-01 | A kind of insulated gate bipolar transistor of carrier storage enhancing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107134488B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389902B (en) * | 2018-04-28 | 2020-06-26 | 四川大学 | Reverse conducting IGBT with back groove grid |
| CN109686787B (en) * | 2018-11-20 | 2020-12-29 | 电子科技大学 | IGBT device clamped by diode and provided with carrier storage layer |
| CN114551570B (en) * | 2022-02-18 | 2023-05-26 | 电子科技大学 | Low-power consumption power device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835841A (en) * | 2015-05-08 | 2015-08-12 | 邓华鲜 | Structure of IGBT chip |
| CN105118830A (en) * | 2015-08-03 | 2015-12-02 | 电子科技大学 | Enhanced HEMT of integrated SBD |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8058670B2 (en) * | 2009-06-04 | 2011-11-15 | Force—MOS Technology Corporation | Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up |
| US8466513B2 (en) * | 2011-06-13 | 2013-06-18 | Semiconductor Components Industries, Llc | Semiconductor device with enhanced mobility and method |
-
2017
- 2017-06-01 CN CN201710404322.6A patent/CN107134488B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835841A (en) * | 2015-05-08 | 2015-08-12 | 邓华鲜 | Structure of IGBT chip |
| CN105118830A (en) * | 2015-08-03 | 2015-12-02 | 电子科技大学 | Enhanced HEMT of integrated SBD |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107134488A (en) | 2017-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107275381B (en) | A kind of IGBT of dual carrier storage enhancing | |
| CN107293579B (en) | A kind of superjunction IGBT with low conduction voltage drop | |
| CN103383958B (en) | A kind of RC-IGBT device and making method thereof | |
| CN107195678B (en) | A kind of superjunction IGBT of carrier storage enhancing | |
| CN110148629B (en) | Groove type silicon carbide MOSFET device and preparation method thereof | |
| CN108389901A (en) | A kind of enhanced superjunction IGBT of carrier storage | |
| CN108198851A (en) | A kind of superjunction IGBT with enhancing carrier storage effect | |
| CN103794647B (en) | A kind of two-way IGBT device and preparation method thereof | |
| CN106067480B (en) | A kind of binary channels RC-LIGBT device and preparation method thereof | |
| CN109192772A (en) | A kind of groove-shaped insulated gate bipolar transistor and preparation method thereof | |
| CN107275383B (en) | Super junction IGBT containing heterojunction | |
| CN108649068B (en) | RC-IGBT device and preparation method thereof | |
| CN105870180B (en) | Double division trench gate charge storage type RC-IGBT and its manufacturing method | |
| CN112420694B (en) | Reversible conduction silicon carbide JFET power device integrated with reverse Schottky freewheel diode | |
| CN107134488B (en) | A kind of insulated gate bipolar transistor of carrier storage enhancing | |
| CN111834449B (en) | Quick turn-off RC-IGBT device with back double MOS structure | |
| CN115188814B (en) | RC-JGBT device and manufacturing method thereof | |
| CN110504310A (en) | A kind of RET IGBT and preparation method thereof with automatic biasing PMOS | |
| CN103383957A (en) | Reverse conducting insulated gate bipolar transistor (RC-IGBT) device | |
| KR20010006559A (en) | Silicon carbide field controlled bipolar switch | |
| CN108231878A (en) | A kind of two-way trench gate charge storage type IGBT and preparation method thereof | |
| CN112201690A (en) | MOSFET transistor | |
| CN117497579B (en) | Silicon carbide IGBT structure, manufacturing method and electronic equipment | |
| CN110416295B (en) | Groove-type insulated gate bipolar transistor and preparation method thereof | |
| CN109920838B (en) | Groove type silicon carbide MOSFET device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191001 Termination date: 20210601 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |