CN107134488A - A kind of carrier stores enhanced insulated gate bipolar transistor - Google Patents
A kind of carrier stores enhanced insulated gate bipolar transistor Download PDFInfo
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- CN107134488A CN107134488A CN201710404322.6A CN201710404322A CN107134488A CN 107134488 A CN107134488 A CN 107134488A CN 201710404322 A CN201710404322 A CN 201710404322A CN 107134488 A CN107134488 A CN 107134488A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 232
- 239000004020 conductor Substances 0.000 claims description 114
- 239000000463 material Substances 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 230000003139 buffering effect Effects 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 230000001413 cellular effect Effects 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000002178 crystalline material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 5
- 238000003860 storage Methods 0.000 abstract description 5
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract
The invention provides a kind of insulated-gate bipolar transistor device, launch site employs the semi-conducting material with energy gap higher than other semiconductor regions, base forms the higher PN heterojunction of forward conduction voltage with launch site, the diode of diode or two or more series aiding connection between base and emitter stage by a diode or two series aiding connections is connected, and the forward conduction voltage of the diode paths between base and emitter stage is less than the forward conduction voltage for the PN heterojunction that base is formed with launch site.In forward conduction, the diode current flow between base and emitter stage, the current potential of base is raised, so that the minority carrier of drift region is strengthened in the storage effect near base.Compared with conventional insulator grid bipolar transistor device, insulated-gate bipolar transistor device of the invention can obtain lower conduction voltage drop.
Description
Technical field
The invention belongs to semiconductor devices, particularly semiconductor power device.
Background technology
Generally, semiconductor power device needs high breakdown voltage, low conducting voltage（Or conducting resistance）, fast open
Close speed and high reliability.In order to obtain high breakdown voltage, semiconductor power device is generally using a doping concentration ratio
It is relatively low（I.e. resistivity ratio is higher）Semiconductor region do resistance to nip.Insulated gate bipolar transistor（Insulated Gate
Bipolar Transistor, IGBT）It is a kind of bipolar device, it introduces minority carrier and participates in conductive so that resistance
Full of conductive carrier in the higher resistance to nip of rate, so as to strengthen the conductive capability of device, relatively low conducting voltage is obtained
（Or conducting resistance）.In addition, IGBT also have current saturation ability, and can by control gate voltage opening come control device
Close, thus with higher reliability.These features cause IGBT to be widely used in mesohigh field.Certainly, introduce a small number of
After carrier, this inevitably increases the time of switch, especially increases the turn-off time（Or shut-off power consumption）.Generally,
There is tradeoff between IGBT shut-off power consumption and conducting voltage, this tradeoff is the important references for evaluating IGBT performances
Foundation.
In order to improve the tradeoff between IGBT shut-off power consumption and conducting voltage, IGBT collecting zone-drift region knot
Structure experienced from punch（Punch Through, PT）To non-punch（Non Punch Through, NPT）, then to electric field
Cut-off type（Field Stop, FS）Or soft punch（Soft Punch Through, SPT）Or weak break-through（Light Punch
Through, LPT）Process；IGBT grid structure experienced the process from planar gate to groove grid；IGBT emission area structure
Also emitter terminal carrier concentration enhancing technology is occurred in that, wherein Typical Representative has the CSTBT of Mitsubishi Electric（Carrier
Stored Trench Bipolar Transistor）With the IEGT of Toshiba（Injection Enhanced Gate
Transistor）Deng.
In CSTBT, improve close to the resistance to nip of n-type（Or n-type drift region）The doping concentration at top, so as to suppress hole
Into emitter stage to improve the carrier concentration at the top of n-type drift region, the compromise improved between shut-off power consumption and conducting voltage is closed
System.However, to realize that such structure can also increase the complexity of technique, the requirement to the control accuracy of technique is also tighter
Lattice.In addition, after the doping concentration at the top of n-type drift region is improved, the electric field at pn-junction at the top of n-type drift region can be strengthened, so that
Reduce breakdown voltage.Although some with going deep into n-type drift region p+ areas can also be re-introduced into n-type drift region near top with slow
Electric field at the pn-junction of solution top, but this can further increase process costs and manufacture difficulty.
The content of the invention
It is an object of the invention to provide a kind of insulated-gate bipolar transistor device, propose that a kind of new emitter terminal is carried
Sub- concentration enhancing technology is flowed, the technology can effectively strengthen storage effect of the minority carrier at the top of drift region, in manufacture
Easily realized in technique, and do not interfere with breakdown voltage.
The present invention provides a kind of insulated-gate bipolar transistor device, and its structure cell includes：First be lightly doped is conductive
The drift region of type（20）, with the drift region（20）The collecting zone of the second conduction type that is in contact of one side（10）, with institute
State drift region（20）The base of the second conduction type that is in contact of another side（30）, with the base（30）At least partly connect
The launch site of first conduction type of tactile heavy doping（41）, with the launch site（41）, the base（30）And the drift
Move area（20）The grid structure contacted（It is made up of 50 and 90）, it is covered in the conductor of the collecting zone（1）The colelctor electrode of formation
（C）, it is covered in the conductor with the launch site（2）The emitter stage of formation（E）, it is covered in the conductor of the grid structure（3）Shape
Into grid（G）, it is characterised in that：
The drift region of first conduction type being lightly doped（20）With the collecting zone of second conduction type（10）Can be
Directly contact or pass through the buffering area of first conduction type（21）Mediate contact；
The launch site of first conduction type of the heavy doping（41）With the base of second conduction type（30）Can be straight
Contact or pass through the bonding pad of first conduction type（42）Mediate contact；
The grid structure（It is made up of 50 and 90）Including at least one insulating medium layer（90）With at least one conductor region
（50）, the insulating medium layer（90）With the launch site（41）, the base（30）And the drift region（20）It is direct
Contact；The insulating medium layer（70）Another side and the conductor region（50）Directly contact, the conductor region（50）It is another
Face and the grid conductor（3）Directly contact；The insulating medium layer（90）It is to be made up of insulating dielectric materials, the insulation is situated between
Material can be silica or the dielectric material with dielectric coefficient more higher or lower than silica；It is described
Conductor region（50）It is to be made up of conductor material, the conductor region（50）Conductor material can be heavy doping poly semiconductor material
Material or metal material, can also be other conductor materials；The conductor region（50）Conductor material can be with the grid
Pole conductor（3）It is identical, can also be different；
The drift region（20）, the collecting zone（10）, the base（30）, the buffering area（21）With the bonding pad（42）
It is to be made up of the first semi-conducting material；The launch site（41）It is to be made up of second of semi-conducting material；Described second half
The energy gap of conductor material is higher than the energy gap of the first semi-conducting material；
The base（30）With the emitter stage（E）Between pass through a diode（100）Or the diode of two series aiding connections
（101 and 102）Or the diode of two or more series aiding connection（103）It is connected；The base（30）With emitter stage（E）Between two
Pole pipe（100th, 101 and 102,103）The forward conduction sense of current and the base（30）With the launch site（41）Constitute
The forward conduction sense of current of hetero-junctions is identical；The base（30）With the launch site（41）The positive guide of the hetero-junctions of composition
The pressure that is powered is more than the base（30）Diode between emitter E（100th, 101 and 102,103）The forward conduction electricity of path
Pressure；
When first conduction type is N-type, the second described conduction type is p-type, the base（30）With emitter stage（E）It
Between diode the forward conduction sense of current and the base（30）With the launch site（41）The forward direction of the hetero-junctions of composition
Current lead-through direction is all from the base（30）Flow to the emitter stage（E）；It is described when first conduction type is p-type
The second conduction type be N-type, the base（30）With emitter stage（E）Between diode the forward conduction sense of current and institute
State base（E）With the launch site（41）The forward conduction sense of current of the hetero-junctions of composition is all from the emitter stage（E）Stream
To the base（30）.
Further, described grid structure（It is made up of 50 and 90）Can be planar gate structure or groove grid knot
Structure；
When the first described semi-conducting material is Si, second of semi-conducting material can be SiC, GaN, SiCN, diamond,
GaAs etc. has the semi-conducting material of energy gap higher than Si；When the first described semi-conducting material is Ge, described second
It can be the semiconductor material that Si, SiC, GaN, SiCN, diamond, GaAs etc. have energy gap higher than Ge to plant semi-conducting material
Material；When the first described semi-conducting material is GaAs, second of semi-conducting material can be SiC, GaN, SiCN, diamond
Deng the semi-conducting material with energy gap higher than GaAs；Second of semi-conducting material can be monocrystal material, polycrystalline
Material or non-crystalline material.
The base（30）With emitter stage（E）Between diode can be integrated in the diode of chip internal, also may be used
To be external diode；The base（30）With emitter stage（E）Between diode can be PN diodes, can be Xiao Te
Based diode or the compound diode of PN- Schottky, can also be other types of diode；It is described to be integrated in core
Diode inside piece can be produced on cellular region, can also be produced on other regions outside cellular region；
The shape of the cellular of the insulated-gate bipolar transistor device can be the shape such as bar shaped, hexagon, circle, square,
Arrangement mode can be the mode such as bar shaped, hexagon, circle, square.
Further, the base（30）With emitter stage（E）Between diode be to be produced on a poly semiconductor area（51
And 52,53 and 54,55 and 56,57 and 58）In Schottky diode, the poly semiconductor area（51 and 52,53 and 54,55
And 56,57 and 58）It is made up of the first semi-conducting material；
The poly semiconductor area（51 and 52,53 and 54,55 and 56,57 and 58）Pass through an insulating medium layer（91、92）With
The base（30）, the launch site（41）And the drift region（20）It is isolated；The poly semiconductor area（51 and 52,53
And 54,55 and 56,57 and 58）Can go deep into the base（30）Or/and the launch site（41）Or/and the drift region
（20）Internal trench structure or positioned at the base（30）Or/and the launch site（41）Or/and the drift region
（20）The planarized structure on surface；The poly semiconductor area（51 and 52,53 and 54,55 and 56,57 and 58）Can be first
The poly semiconductor area of conduction type（51 and 52,55 and 56）Or second conduction type poly semiconductor area（53 and
54th, 57 and 58）；
The poly semiconductor area（51 and 52,53 and 54,55 and 56,57 and 58）It is the poly semiconductor area of the first conduction type
（51 and 52,55 and 56）When, the poly semiconductor area of first conduction type（51 and 52,55 and 56）In include at least one
Compared with the poly semiconductor area of the first conduction type of heavy doping（51、55）It is many with least one the first conduction type being lightly doped
Brilliant semiconductor region（52、56）, the poly semiconductor area of first conduction type compared with heavy doping（51、55）At least partly with institute
State the poly semiconductor area for the first conduction type being lightly doped（52、56）Directly contact；First conductive-type compared with heavy doping
The poly semiconductor area of type（51、55）On covered with a conductor（61、65）The electrode with Ohmic contact is formed, it is described heavier
The poly semiconductor area of first conduction type of doping（51、55）The upper electrode with Ohmic contact（61、65）It is the polycrystalline
Semiconductor region（51 and 52,55 and 56）In Schottky diode the first conductive electrode；First conductive-type being lightly doped
The poly semiconductor area of type（52、56）On covered with a conductor（62、66）The electrode with Schottky contacts is formed, it is described light
The poly semiconductor area of first conduction type of doping（52、56）The upper electrode with Schottky contacts（62、66）It is described many
Brilliant semiconductor region（51 and 52,55 and 56）In Schottky diode the second conductive electrode；
The poly semiconductor area（51 and 52,53 and 54,55 and 56,57 and 58）It is the poly semiconductor area of the second conduction type
（53 and 54,57 and 58）When, the poly semiconductor area of second conduction type（53 and 54,57 and 58）In include at least one
Compared with the poly semiconductor area of the second conduction type of heavy doping（54、58）It is many with least one the second conduction type being lightly doped
Brilliant semiconductor region（53、57）, the poly semiconductor area of second conduction type compared with heavy doping（54、58）At least partly with institute
State the poly semiconductor area for the second conduction type being lightly doped（53、57）Directly contact；Second conductive-type compared with heavy doping
The poly semiconductor area of type（54、58）On covered with a conductor（64、68）The electrode with Ohmic contact is formed, it is described heavier
The poly semiconductor area of second conduction type of doping（54、58）The upper electrode with Ohmic contact（64、68）It is the polycrystalline
Semiconductor region（53 and 54,57 and 58）In Schottky diode the second conductive electrode；Second conductive-type being lightly doped
The poly semiconductor area of type（53、57）On covered with a conductor（63、67）The electrode with Schottky contacts is formed, it is described light
The poly semiconductor area of second conduction type of doping（53、57）The upper electrode with Schottky contacts（63、67）It is described many
Brilliant semiconductor region（53 and 54,57 and 58）In Schottky diode the first conductive electrode；
On the base（30）Covered with a conductor（4）Form the base stage with Ohmic contact（B）, the base stage（B）Pass through
Wire and the poly semiconductor area（51 and 52,53 and 54,55 and 56,57 and 58）In Schottky diode it is second conductive
Electrode（62、64、66、68）It is connected, the emitter stage（E）Pass through wire and the poly semiconductor area（51 and 52,53 and
54th, 55 and 56,57 and 58）In Schottky diode the first conductive electrode（61、63、65、67）It is connected.
Further, the base（30）With emitter stage（E）Between diode be to be produced on a poly semiconductor area（71
And 72,73 and 74,75 and 76）In PN diodes, the poly semiconductor area is made up of the first semi-conducting material；
The poly semiconductor area（71 and 72,73 and 74,75 and 76）Pass through an insulating medium layer（91、92）With the base
（30）, the launch site（41）And the drift region（20）It is isolated；The poly semiconductor area（71 and 72,73 and 74,75 and
76）Can go deep into the base（30）Or/and the launch site（41）Or/and the drift region（20）Internal groove profile knot
Structure or positioned at the base（30）Or/and the launch site（41）Or/and the drift region（20）The plane on surface
Structure；The poly semiconductor area（71 and 72,73 and 74,75 and 76）In the polycrystalline half comprising at least one the first conduction type
Conductor region（71、73、75）With the poly semiconductor area of at least one the second conduction type（72、74、76）, first conductive-type
The poly semiconductor area of type（71、73、75）At least part and second conduction type poly semiconductor area（72、74、
76）Directly contact；
The poly semiconductor area of first conduction type（71、73、75）On covered with a conductor（81、83、85）Form tool
There are the electrode of Ohmic contact, the poly semiconductor area of first conduction type（71、73、75）The upper electrode with Ohmic contact
（81、83、85）It is the poly semiconductor area（71 and 72,73 and 74,75 and 76）In PN diodes the first conductive electrode；
The poly semiconductor area of second conduction type（72、74、76）On covered with a conductor（82、84、86）Being formed has Europe
The electrode of nurse contact, the poly semiconductor area of second conduction type（72、74、76）The upper electrode with Ohmic contact（82、
84、86）It is the poly semiconductor area（71 and 72,73 and 74,75 and 76）In PN diodes the second conductive electrode；
The base（30）Covered with a conductor（4）Form the base stage with Ohmic contact（B）, the base stage（B）By leading
Line and the poly semiconductor area（71 and 72,73 and 74,75 and 76）In PN diodes the second conductive electrode（82、84、
86）It is connected, the emitter stage（E）Pass through wire and the poly semiconductor area（71 and 72,73 and 74,75 and 76）In PN
First conductive electrode of diode（81、83、85）It is connected.
Further, the base（30）With emitter stage（E）Between diode be to be produced on the base（30）In Xiao
Special based diode；
The base（30）On covered with a conductor（5）Form the base stage with Schottky contacts（B）, the base（30）On
Base stage with Schottky contacts（B）It is the first conductive electrode of the Schottky diode in the base；The base stage（B）It is logical
Cross wire and the emitter stage（E）It is connected.
Further, the base（30）With emitter stage（E）Between diode be to be produced on the base（30）In PN
Diode；
The base（30）In the semiconductor region containing at least one the first conduction type being lightly doped（59）, the base（30）
At least part and first conduction type being lightly doped semiconductor region（59）Directly contact；The base（30）In it is light
The semiconductor region of first conduction type of doping（59）It is to be made up of the first semi-conducting material；The base（30）In light mix
The semiconductor region of the first miscellaneous conduction type（59）On covered with a conductor（60）Formed and connect with Schottky contacts or ohm
Tactile base stage（B）, the base stage（B）It is the base（30）In PN diodes the first conductive electrode；The base stage（B）It is logical
Cross wire and the emitter stage（E）It is connected.
Further, the base（30）With emitter stage（E）Between diode be produced on second conduction type
Semiconductor region（31）In Schottky diode, the semiconductor region of second conduction type（31）By the first semi-conducting material
Constitute；
The semiconductor region of second conduction type（31）With the drift region（20）Contact and pass through a groove profile grid knot
Structure（It is made up of 50 and 90）Or/and a groove typed insulation dielectric area（93）With the base（30）And the launch site（41）Phase
Isolation；The semiconductor region of second conduction type（31）In the semiconductor containing at least one the second conduction type being lightly doped
Area（32）, the semiconductor region of second conduction type（31）At least the half of part and second conduction type being lightly doped
Conductor region（32）Directly contact；
The semiconductor region of second conduction type being lightly doped（32）On covered with a conductor（6）Being formed has schottky junctions
Tactile electrode, the semiconductor region of second conduction type being lightly doped（32）The upper electrode with Schottky contacts（6）It is institute
State the semiconductor region of the second conduction type（32）In Schottky diode the first conductive electrode；Second conduction type
Semiconductor region（31）On covered with a conductor（7）The electrode with Ohmic contact is formed, second conduction type is partly led
Body area（31）The upper electrode with Ohmic contact（7）It is the semiconductor region of second conduction type（31）In the pole of Schottky two
Second conductive electrode of pipe；
The base（30）On covered with a conductor（4）Form the base stage with Ohmic contact（B）；The base stage（B）Pass through
The semiconductor region of wire and second conduction type（31）In Schottky diode the second conductive electrode（7）It is connected,
The emitter stage（E）Pass through wire and the semiconductor region of second conduction type（31）In Schottky diode first lead
Electrode（6）It is connected.
Further, the base（30）With emitter stage（E）Between diode be produced on second conduction type
Semiconductor region（33）In PN diodes, the semiconductor region of second conduction type（33）By the first semi-conducting material structure
Into；
The semiconductor region of second conduction type（33）With the drift region（20）Contact and pass through a groove profile grid knot
Structure（It is made up of 50 and 90）Or/and a groove typed insulation dielectric area（93）With the base（30）And the launch site（41）Phase
Isolation；The semiconductor region of second conduction type（33）In the semiconductor containing at least one the first conduction type being lightly doped
Area（43）, the semiconductor region of second conduction type（33）At least the half of part and first conduction type being lightly doped
Conductor region（43）Directly contact；
The semiconductor region of first conduction type being lightly doped（43）On covered with a conductor（8）Being formed has schottky junctions
The electrode of tactile or Ohmic contact, the semiconductor region of first conduction type being lightly doped（43）It is upper that there is Schottky contacts or Europe
The electrode of nurse contact（8）It is the semiconductor region of second conduction type（33）In PN diodes the first conductive electrode；Institute
State the semiconductor region of the second conduction type（33）On covered with a conductor（9）Form the electrode with Ohmic contact, described the
The semiconductor region of two conduction types（33）The upper electrode with Ohmic contact（9）It is the semiconductor region of second conduction type
（33）In PN diodes the second conductive electrode；
The base（30）On covered with a conductor（4）Form the base stage with Ohmic contact（B）；The base stage（B）Pass through
The semiconductor region of wire and second conduction type（33）In PN diodes the second conductive electrode（9）It is connected, it is described
Emitter stage（E）Pass through wire and the semiconductor region of second conduction type（33）In PN diodes the first conductive electrode
（8）It is connected.
Further, the base（30）With emitter stage（E）Between have the diodes of two series aiding connections（101 and 102）；Institute
There is a diode in the diode for stating two series aiding connections（101）With the base（30）It is connected, another diode
（102）With the emitter stage（E）It is connected, described and base（30）Connected diode（101）The first conductive electrode pass through
Wire and the diode being connected with emitter stage（102）The second conductive electrode be connected；
Described and base（30）The diode being connected is described to be produced on base（30）In Schottky diode or the poles of PN bis-
Guan Shi, described and emitter stage（E）The diode being connected can described be produced on poly semiconductor area（51 and 52,53 and 54,
55 and 56,57 and 58,71 and 72,73 and 74,75 and 76）In Schottky diode or PN diodes, can also be the system
Make the semiconductor region in second conduction type（31、33）In Schottky diode or PN diodes；
Described and base（30）The diode being connected is described to be produced on poly semiconductor area（51 and 52,53 and 54,55 and
56th, 57 and 58,71 and 72,73 and 74,75 and 76）In Schottky diode or PN diodes when, it is described to be connected with emitter stage
The diode connect can be that poly semiconductor area is produced on described in another（51 and 52,53 and 54,55 and 56,57 and 58,71 and
72nd, 73 and 74,75 and 76）In Schottky diode or PN diodes, can also be described and be produced on second conductive-type
The semiconductor region of type（31、33）In Schottky diode or PN diodes；
Described and base（30）The diode being connected is the semiconductor region for being produced on second conduction type（31、33）
In Schottky diode or PN diodes when, the diode being connected with emitter stage can described be produced on polycrystalline half
Conductor region（51 and 52,53 and 54,55 and 56,57 and 58,71 and 72,73 and 74,75 and 76）In Schottky diode or PN
Diode, can also be the semiconductor region that second conduction type is produced on described in another（31、33）In Schottky two
Pole pipe or PN diodes.
Further, the base（30）With emitter stage（E）Between have the diode of two or more series aiding connection（103）；Institute
State the diode of two or more series aiding connection（103）It is to be produced on base by described（30）In Schottky diode or the poles of PN bis-
Pipe, described it is produced on poly semiconductor area（51 and 52,53 and 54,55 and 56,57 and 58,71 and 72,73 and 74,75 and 76）In
Schottky diode or PN diodes, the semiconductor region for being produced on second conduction type（31、33）In Xiao Te
At least one of based diode or PN diodes diode are constituted.
Brief description of the drawings
Fig. 1:Traditional NPT types and PT or FS type planar gate IGBT structure schematic diagrames；
Fig. 2:A kind of NPT types planar gate IGBT of the present invention, there is a diode between its base and emitter stage；
Fig. 3:A kind of PT or FS types planar gate IGBT of the present invention, there is a diode between its base and emitter stage；
Fig. 4:Another NPT type and PT or FS type planar gate IGBT of the present invention, has two in the same direction between its base and emitter stage
The diode of series connection；
Fig. 5:Another NPT type and PT or FS type planar gate IGBT of the present invention, has two or more between its base and emitter stage
The diode of series aiding connection；
Fig. 6:Another NPT type and PT or FS type planar gate IGBT of the present invention, there is a connection between its base and launch site
Area；
Fig. 7:According to Fig. 2 and Fig. 3, a kind of NPT types of the invention and PT or FS type groove grid IGBT；
Fig. 8:According to Fig. 4, another NPT type of the invention and PT or FS type groove grid IGBT；
Fig. 9:According to Fig. 5, another NPT type of the invention and PT or FS type groove grid IGBT；
Figure 10:According to Fig. 6, another NPT type of the invention and PT or FS type groove grid IGBT；
Figure 11:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
It is produced on the Schottky diode in a groove profile N-Poly area；
Figure 12:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
It is produced on the Schottky diode in a groove profile P-Poly area；
Figure 13:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
It is produced on the Schottky diode in a plane N-Poly area or P-Poly areas；
Figure 14:According to Fig. 2, another NPT type groove grid IGBT of the invention, the diode between its base and emitter stage is system
Make the PN diodes in a groove profile N-Poly area；
Figure 15:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
It is produced on the PN diodes in a groove profile N-Poly area；
Figure 16:According to Fig. 2, another NPT type groove grid IGBT of the invention, the diode between its base and emitter stage is system
Make the PN diodes in a groove profile P-Poly area；
Figure 17:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
It is produced on the PN diodes in a groove profile P-Poly area；
Figure 18:According to Fig. 2 and Fig. 3, another NPT type of the invention and PT or FS type groove grid IGBT, its base and emitter stage it
Between diode be the PN diodes being produced in a plane Poly area；
Figure 19:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
The Schottky diode or PN diodes being produced in base；
Figure 20:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
Be produced on one by groove barrier from P areas in Schottky diode；
Figure 21:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
It is produced on the Schottky diode in a P area isolated by groove profile dielectric area；
Figure 22:According to Fig. 3, another PT or FS type groove grid IGBT of the invention, the diode between its base and emitter stage is
Be produced on one by groove barrier from P areas in PN diodes；
Figure 23:According to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base is to be produced on base
Schottky diode in area, the diode being connected with emitter stage is the pole of Schottky two being produced in a groove profile N-Poly area
Pipe；
Figure 24:According to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base is to be produced on base
Schottky diode in area, the diode being connected with emitter stage is the PN diodes being produced in a groove profile Poly area；
Figure 25:According to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base is to be produced on base
Schottky diode in area, the diode being connected with emitter stage is the pole of Schottky two being produced in a plane Poly area
Pipe or PN diodes；
Figure 26:According to Fig. 4, another PT or FS type groove grid IGBT of the invention, the diode being connected with base is to be produced on base
Schottky diode in area, the diode being connected with emitter stage be produced on one with by groove barrier from P areas in Xiao Te
Based diode；
Figure 27:Tradition FS type groove grid IGBT in FS type groove grid IGBT and Fig. 1 of the invention in Fig. 8I-VCharacteristic curve；
Figure 28:In Fig. 8 in FS type groove grid IGBT and Fig. 1 of the invention tradition FS type groove grid IGBT carrier concentration profile.
Embodiment
The present invention is described in detail below in conjunction with the accompanying drawings.
In Fig. 1, that (a) figure on the left side is provided is traditional NPT（Non Punch Through, non-break-through）Type planar gate
IGBT structure schematic diagram, that (b) figure on the right is provided is traditional PT（Punch Through, break-through）Or FS（Field Stop,
Field cut-off）Type groove grid IGBT structure schematic diagram, wherein FS types IGBT is also referred to as SPT（Soft Punch Trough, soft break-through）Type
IGBT or LPT）（Light Punch Through, weak break-through）Type IGBT.Generally, IGBT can be divided into plane by grid structure
Grid and groove grid, can be divided into NPT types, PT types and FS types by collecting zone-drift region structure.Compared with planar gate IGBT, groove grid
IGBT has lacked JFET areas, thus cellular density can be bigger, and conductive capability can be with stronger.In the resistance to pressure of highest, NPT types IGBT's
Drift region（N- areas 20）Do not exhaust all generally, and PT types or FS types IGBT drift region（N- areas 20）Generally all exhaust.
The PT types IGBT and FS types IGBT main distinction is that both manufacturing process are different, and PT types IGBT manufacture is in Yi Ji
Electric area（P areas 10）For epitaxial buffer area on the basis of backing material（N areas 21）, then extension drift region again（N- areas 20）, and FS
Type IGBT is with drift region（N- areas 20）To form buffering area with ion implantation doping process respectively on the basis of backing material
（N areas 21）And collecting zone（P areas 10）.It is readily apparent that from the difference of manufacturing process, PT types IGBT collecting zone（P areas 10）And buffering
Area（N areas 21）Collecting zone that would generally respectively than FS types IGBT（P areas 10）And buffering area（N areas 21）Thicker, dopant dose also can
It is higher.
In Fig. 1, when IGBT forward conductions, base（P-base areas 30）With drift region（N- areas 20）The PN junction of formation is
It is reverse-biased, thus drift region（N- areas 20）Middle minority carrier is close to base（P-base areas 30）Neighbouring carrier concentration compares
It is low, larger voltage drop is had on this subregion.The main object of the present invention is to improve minority carrier close
Base（P-base areas 30）Neighbouring storage effect, so as to reduce IGBT conduction voltage drop.
The technical characteristic of the present invention is mainly reflected in launch site（n+Area 41）This side, technology of the invention is applied to NPT
Any one of type, PT types and FS types IGBT, are also applied for any one of planar gate and groove grid IGBT.
In fig. 2, launch site（n+Area 41）Use the semiconductor with energy gap higher than other semiconductor regions
Material.If other semiconductor regions use Si materials, launch site（n+Area 41）SiC can be used（3C-SiC、4H-
SiC, 6H-SiC etc.）, GaN, SiCN, diamond, the energy gap semi-conducting material higher than Si, launch site such as GaAs（n+Area
41）Can be monocrystalline, polycrystalline or non-crystalline material.Launch site（n+Area 41）With base（P-base areas 30）The PN heterojunction of formation
Forward conduction voltage is higher than the forward conduction voltage of Si PN junctions（About 0.7 V）With the forward conduction voltage of Si schottky junctions（It is logical
Often less than 0.7 V）.In emitter stage（E）With base（P-base areas 30）Between pass through a diode（100）Connection, diode
（100）Can be with integrated and chip internal, can also be external, can be PN diodes, Schottky diode, PN- Schottky be combined
Type diode（For exampleJunction Barrier SChottky diodes,Merged PiN SChottky diodes）Or its
The diode of its type.For Si diodes, the V of conducting voltage about 0.7 or less than 0.7 V.When diode 100 is turned on,
Launch site（n+Area 41）With base（P-base areas 30）The PN heterojunction of formation is not turned on generally, thus electronic current is still by grid
Pole（G）Control.In forward conduction, electronic current is from emitter stage（E）Into launch site（n+Area 41）, by by grid
（G）The raceway groove of control enters drift region（N- areas 20）, enter back into collecting zone（P areas 10）Flow to colelctor electrode（C）；Hole is from current collection
Pole（C）Into collecting zone（P areas 10）, enter back into drift region（N- areas 20）, by base（P-base areas 30）Collect and pass through two poles
Pipe 100 flows to emitter stage（E）.In forward conduction, emitter stage（E）Current potential be 0V, if diode 100 forward conduction electricity
Pressure is 0.7V, then base（P-base areas 30）Current potential be 0.7V；If the pressure drop on raceway groove is 0.1V, drift region（N- areas
20）The current potential at top is 0.1V.At this moment, base（P-base areas 30）And drift region（N- areas 20）The PN junction of formation has 0.6 V's
Forward voltage drop, hole enters base（P-base areas 30）Become more difficult, hole is in drift region（N- areas 20）The storage at top
Effect can also be become more apparent upon, and conduction voltage drop can also be reduced.
In figure 3, the main distinction with Fig. 2 structure is, collecting zone（P areas 10）And drift region（N- areas 20）Between have
One buffering area（N areas 21）.
In Fig. 4, the main distinction of (a) figure on the left side and Fig. 2 structure is, in emitter stage（E）With base（p-base
Area 30）Between pass through the diodes of two series aiding connections（101 and 102）Connection.The diode of two series aiding connections（101 Hes
102）In any one diode can be PN diodes or Schottky diode or the compound diode of PN- Schottky,
The diode of two series aiding connections（101 and 102）The forward conduction voltage of path is less than launch site（n+Area 41）With base（p-
Base areas 30）The forward conduction voltage of the PN heterojunction of formation.In Fig. 4, the structure of (b) figure on the right and (a) figure on the left side
The main distinction be, collecting zone（P areas 10）And drift region（N- areas 20）Between have a buffering area（N areas 21）.
In Figure 5, the main distinction with counter structure in Fig. 4 is, in emitter stage（E）With base（P-base areas 30）It
Between pass through the diode of two or more series aiding connection（103）Connection.Here the diode of two or more series aiding connection（103）In
Any one diode can be PN diodes or Schottky diode or the compound diode of PN- Schottky, here
The diode of two or more series aiding connection（103）The forward conduction voltage of path is less than launch site（n+Area 41）With base（p-
Base areas 30）The forward conduction voltage of the PN heterojunction of formation.
In figure 6, the main distinction of (a) figure on the left side and Fig. 2 structure is, in launch site（E）With base（p-base
Area 30）Between also have a bonding pad（N areas 42）.In figure 6, the main region of the structure of (b) figure on the right and (a) figure on the left side
It is not, collecting zone（P areas 10）And drift region（N- areas 20）Between have a buffering area（N areas 21）.
In the figure 7, the main distinction of (a) figure on the left side and Fig. 2 structure is, employs slot grid structure（By 50 and 90
Composition）.Slot grid structure（It is made up of 50 and 90）Go deep into drift region（N- areas 20）In vivo, its conductor region（50）Base plane can be with
With base（P-base areas 30）Base plane maintain an equal level, base can also be less than（P-base areas 30）Base plane.In Fig. 7
In, the main distinction of the structure of (b) figure on the right and (a) figure on the left side is, collecting zone（P areas 10）And drift region（N- areas 20）
Between have a buffering area（N areas 21）.
In fig. 8, the main distinction with counter structure in Fig. 4 is, employs slot grid structure（It is made up of 50 and 90）.
In fig .9, the main distinction with counter structure in Fig. 5 is, employs slot grid structure（It is made up of 50 and 90）.
In Fig. 10, the main distinction with counter structure in Fig. 6 is, employs slot grid structure（It is made up of 50 and 90）.
What Figure 11 was provided is emitter stage（E）With base（P-base areas 30）Between diode be integrated in the one of chip internal
Kind of situation, diode is the Schottky diode being produced in groove profile N-poly areas, N-poly areas by an insulating barrier 91 with
Other zone isolations.N-poly areas are by n areas（51）With n- areas（52）Composition, conductor（61）With n areas（51）Contact forms ohm and connect
Touch, conductor（62）With n- areas（52）Contact forms Schottky contacts, conductor（62）It is the anode of Schottky diode, conductor（61）
It is the negative electrode of Schottky diode.Conductor（4）With base（P-base areas 30）Contact forms Ohm contact electrode（Base stage B）, base
Pole（B）Pass through wire and the anode of Schottky diode（Conductor 62）Connection, emitter stage（E）Pass through wire and Schottky diode
Negative electrode（Conductor 61）Connection.
In fig. 12, the main distinction with Figure 11 structure is, emitter stage（E）With base（P-base areas 30）Between
Diode is the Schottky diode being produced in groove profile P-poly areas.
In fig. 13, the main distinction of (a) figure on the left side and Figure 11 structure is, emitter stage（E）With base（p-base
Area 30）Between diode be the Schottky diode being produced in plane N-poly areas.In fig. 13, (b) figure on the right
It is with the main distinction of Figure 12 structure, emitter stage（E）With base（P-base areas 30）Between diode be produced on it is flat
Schottky diode in Mian Xing P-poly areas.
What Figure 14 was provided is emitter stage（E）With base（P-base areas 30）Between diode be integrated in chip internal again
A kind of situation, diode is the PN diodes being produced in groove profile poly areas, and poly areas pass through an insulating barrier 91 and other areas
Domain separation.Poly areas are by n areas（71）With p areas（72）Composition, p areas（72）By n areas（71）Surround, conductor（81）With n areas（71）Connect
Touch and form Ohmic contact, conductor（82）With p areas（72）Contact forms Ohmic contact, conductor（82）It is the anode of PN diodes, leads
Body（81）It is the negative electrode of PN diodes.Conductor（4）With base（P-base areas 30）Contact forms Ohm contact electrode（Base stage B）,
Base stage（B）Pass through wire and the anode of PN diodes（Conductor 82）Connection, emitter E passes through wire and the negative electrode of PN diodes
（Conductor 81）Connection.
In fig .15, the main distinction with Figure 14 structure is, collecting zone（P areas 10）And drift region（N- areas 20）Between
There can also be a buffering area（N areas 21）.
In figure 16, the main distinction with Figure 14 structure is, the PN diode structures in poly areas are n areas（73）
By p areas（74）Surround.
In fig. 17, the main distinction with Figure 16 structure is, collecting zone（P areas 10）And drift region（N- areas 20）Between
There can also be a buffering area（N areas 21）.
In figure 18, the main distinction of (a) figure on the left side and Figure 15 structure is, emitter stage（E）With base（p-base
Area 30）Between diode be the PN diodes being produced in plane poly areas.In figure 18, (b) figure on the right and the left side
The main distinction of structure of (a) figure be, collecting zone（P areas 10）And drift region（N- areas 20）Between have a buffering area（N areas
21）.
What Figure 19 was provided is emitter stage（E）With base（P-base areas 30）Between diode be integrated in chip internal again
A kind of situation, diode is to make base（P-base areas 30）In Schottky diode or PN diodes.A left side in Figure 19
In (a) figure on side, conductor（5）With base（P-base areas 30）Contact forms Schottky contact electrode（Base stage B）, conductor（5）It is
The negative electrode of Schottky diode, emitter stage（E）Pass through wire and the negative electrode of Schottky diode（Conductor 5）Connection.In Figure 19
The right (b) figure in, in base（P-base areas 30）Zhong Youyige n- areas（59）, conductor（60）With n- areas（59）Contact is formed
Schottky contacts or Ohmic contact, conductor（60）It is the negative electrode of PN diodes, emitter stage（E）Pass through wire and Schottky diode
Negative electrode（Conductor 60）Connection.It should be added that, when n- areas（59）On when being Schottky contacts, the condition of PN junction conducting
It is to need n- areas（59）Generation break-through；Further, since n- areas（59）Dopant dose be much smaller than base（P-base areas 30）Mix
Miscellaneous dosage, when PN junction is turned on almost few electron injections to base（P-base areas 30）.
What Figure 20 was provided is emitter stage（E）With base（P-base areas 30）Between diode be integrated in chip internal again
A kind of situation, diode is to make one by slot grid structure and base（P-base areas 30）P areas in isolation（31）Schottky
Diode.In p areas（31）Zhong Youyige p- areas（32）, conductor（6）With p- areas（32）Contact forms Schottky contacts, conductor（7）
With p areas（31）Contact forms Ohmic contact.Conductor（7）It is the anode of Schottky diode, conductor（6）It is Schottky diode
Negative electrode, conductor（4）With base（P-base areas 30）Contact forms Ohm contact electrode（Base stage B）, base stage（B）Pass through wire and Xiao
The anode of special based diode（Conductor 7）Connection, emitter stage（E）Pass through wire and the negative electrode of Schottky diode（Conductor 6）Connection.
In Figure 21, it is with the main distinction of Figure 20 structure, p areas（31）Pass through a dielectric area（93）With grid
Structure（It is made up of 50 and 90）And base（P-base areas 30）Isolation.
What Figure 22 was provided is emitter stage（E）With base（P-base areas 30）Between diode be integrated in chip internal again
A kind of situation, diode is to make one by slot grid structure and base（P-base areas 30）The p areas of isolation（33）In PN bis-
Pole pipe.In p areas（33）Zhong Youyige n- areas（43）, conductor（8）With n- areas（43）Contact forms Schottky contacts or Ohmic contact,
Conductor（9）With p areas（33）Contact forms Ohmic contact.Conductor（9）It is the anode of PN diodes, conductor（8）It is PN diodes
Negative electrode.Conductor（4）With base（P-base areas 30）Contact forms Ohm contact electrode（Base stage B）, base stage（B）Pass through wire and PN
The anode of diode（Conductor 9）Connection, emitter stage（E）Pass through wire and the negative electrode of Schottky diode（Conductor 8）Connection.
What Figure 23 was provided is emitter stage（E）With base（P-base areas 30）Between two series aiding connections diode it is integrated
In a kind of situation of chip internal, first diode is to make base（P-base areas 30）In Schottky diode, second
Individual diode is the Schottky diode being produced in groove profile poly areas.Conductor（5）With base（P-base areas 30）Contact is formed
Schottky contact electrode（Base stage B）, base stage（B）It is the negative electrode of first diode.By a n area in poly areas（51）With one
N- areas（52）Constitute, conductor（61）With n areas（51）Form Ohmic contact, conductor（62）With n- areas（52）Form Schottky contacts,
Conductor（61）It is the negative electrode of second diode, conductor（62）It is the anode of second diode.The negative electrode of first diode
（Base stage B or conductor 5）Pass through wire and the anode of second diode（Conductor 62）It is connected, emitter stage（E）Pass through wire and
The negative electrode of two diodes（Conductor 61）It is connected.
In fig. 24, the main distinction with Figure 23 structure is, second diode is produced in groove profile poly areas
PN diodes.
In fig. 25, the main distinction of (a) figure on the left side and Figure 23 structure is, second diode be produced on it is flat
Schottky diode in Mian Xing poly areas.In fig. 25, the main distinction of (b) figure on the right and Figure 24 structure is, the
Two diodes are the PN diodes being produced in plane poly areas.
In fig. 26, the main distinction with Figure 23 structure is, second diode is to be produced on one by groove grid
Structure and base（P-base areas 30）The p areas of isolation（31）In Schottky diode.
In order to illustrate the IGBT of the present invention relative to traditional IGBT（Fig. 1）Superiority, here with the FS type groove grid in Fig. 8
IGBT structure（(b) figure in Fig. 8）Exemplified by with traditional FS type grooves grid IGBT in Fig. 1（(b) figure in Fig. 1）Make numerical simulation meter
The contrast of calculation.Numerical simulation uses MEDICI simulation softwares.Setting in emulation is as follows, and Fig. 1 structures use Si materials
Material, Fig. 8 structures also mainly use Si materials, simply launch site（n+Area 41）3C-SiC materials are used, emulation is used
Be half of cellular（The right-hand component of the central symmetry axis of structure chart）, the minority carrier life time in electronics and hole is 50 μ s, half
The width of cellular is 5 μm, conductor region（50）N-poly is used, its width and thickness are respectively 1.9 μm and 2.9 μm, absolutely
Edge layer（90）Use SiO2, its thickness is 0.1 μm, base（P-base areas 30）Width, thickness and doping concentration difference
For 3 μm, 2.5 μm and 3 × 1017 cm-3, launch site（n+Area 41 and n+Area 40）Width, thickness and doping concentration be respectively 0.8
μm, 1 μm and 2 × 1019cm-3, drift region（N- areas 20）Thickness and doping concentration be respectively 300 μm and 2 × 1013 cm-3, delay
Rush area（N areas 21）Thickness and doping concentration be respectively 2 μm and 1 × 1016 cm-3, collecting zone（P areas 10）Thickness and adulterate it is dense
Degree is respectively 1 μm and 5 × 1018 cm-3.The emitter stage of (b) figure in Fig. 8（E）With base（P-base areas 30）Between two
Diode is in 100 A/cm2Under conducting voltage be 0.41 V.Emulation obtains hitting for traditional FS type grooves grid IGBT in Fig. 1
Voltage is worn for 3320 V, FS type groove grid IGBT of the invention breakdown voltage is 3315 V in Fig. 8, and both are almost identical.
What Figure 27 was provided is the positive guide of tradition FS type groove grid IGBT in FS type groove grid IGBT and Fig. 1 of the invention in Fig. 8
It is logicalI-VCurve, the grid voltage that both apply is 15 V.From the figure, it can be seen that in 100 A/cm2Under, groove of the invention in Fig. 8
Grid IGBT conduction voltage drop is 1.56V, than the conduction voltage drop of traditional slot grid IGBT in Fig. 1（1.75 V）Low about 0.2 V, this is one
Individual no small improvement.
What Figure 28 was provided is tradition FS type grooves in FS type groove grid IGBT and Fig. 1 of the invention Fig. 8 under 1.6 V conducting voltages
Grid IGBT drift region（N- areas 20）In hole concentration along the distribution on the right margin of structure chart.It can be seen that
FS type groove grid IGBT of the invention carrier is close to base in Fig. 8（P-base areas 30）Neighbouring storage effect is substantially than figure
Stronger in tradition FS type groove grid IGBT in 1, this is also FS type groove grid IGBT of the invention in Fig. 8 conduction voltage drop than being passed in Fig. 1
The reason for system FS type groove grid IGBT conduction voltage drop is lower.
Many embodiment explanations are done to the present invention above, it is conductive that the n-type semiconductor described in it is considered as first
The semi-conducting material of type, and p-type semiconductor material is considered as the semi-conducting material of the second conduction type, the negative electrode of diode
The first conductive electrode of diode can be regarded as, and the anode of diode can regard the second conductive electrode of diode as.Obviously,
According to the principle of the present invention, the n-type in embodiment can be mutually right with the second conductive electrode with p-type and the first conductive electrode
Adjust without influenceing present disclosure.For those skilled in the art, it can also be obtained under the thought of the present invention
To other many embodiments without departing from the claim of the present invention.
Claims (10)
1. a kind of insulated-gate bipolar transistor device, its structure cell includes：The drift region for the first conduction type being lightly doped,
The collecting zone for the second conduction type being in contact with the one side of the drift region, be in contact with the another side of the drift region
The base of two conduction types, the launch site with the base at least the first conduction type of the heavy doping that part is contacted, with institute
The grid structure that launch site, the base and the drift region are contacted is stated, the conductor formation of the collecting zone is covered in
Colelctor electrode, is covered in the emitter stage with the conductor formation of the launch site, is covered in the grid of the conductor formation of the grid structure
Pole, it is characterised in that：
The drift region of first conduction type being lightly doped can directly contact with the collecting zone of second conduction type,
It can also be the buffering area mediate contact by first conduction type；
The launch site of first conduction type of the heavy doping can directly contact with the base of second conduction type,
It can be the bonding pad mediate contact by first conduction type；
The grid structure includes at least one insulating medium layer and at least one conductor region, the insulating medium layer and the hair
Area, the base and the drift region is penetrated directly to contact；The another side of the insulating medium layer and the conductor region are direct
Contact, the another side of the conductor region is directly contacted with the grid conductor；The insulating medium layer is by insulating dielectric materials
Constitute, the insulating dielectric materials can be silica or with dielectric coefficient more higher or lower than silica
Dielectric material；The conductor region is made up of conductor material, and the conductor material of the conductor region can be the polycrystalline of heavy doping
Semi-conducting material or metal material, can also be other conductor materials；The conductor material of the conductor region can be with institute
State grid conductor identical, can also be different；
The drift region, the collecting zone, the base, the buffering area and the bonding pad are by the first semi-conducting material
Constitute；The launch site is made up of second of semi-conducting material；The energy gap of second of semi-conducting material is higher than institute
State the energy gap of the first semi-conducting material；
Diode or two or more between the base and the emitter stage by a diode or two series aiding connections is same
It is connected to the diode of series connection；The forward conduction sense of current and the base of diode between the base and emitter stage with
The forward conduction sense of current for the hetero-junctions that the launch site is constituted is identical；The hetero-junctions that the base is constituted with the launch site
Forward conduction voltage be more than the forward conduction voltage of diode paths between the base and emitter stage；
When first conduction type is N-type, the second described conduction type is p-type, two between the base and emitter stage
The forward current conducting direction for the hetero-junctions that the forward conduction sense of current and the base of pole pipe and the launch site are constituted is all
It is to flow to the emitter stage from the base；When first conduction type is p-type, the second described conduction type is N-type, institute
It is heterogeneous that the forward conduction sense of current and the base and the launch site for stating the diode between base and emitter stage are constituted
The forward conduction sense of current of knot is all to flow to the base from the emitter stage.
2. a kind of insulated-gate bipolar transistor device as claimed in claim 1, it is characterised in that：
Described grid structure can be planar gate structure or slot grid structure；
When the first described semi-conducting material is Si, second of semi-conducting material can be SiC, GaN, SiCN, diamond,
GaAs etc. has the semi-conducting material of energy gap higher than Si；When the first described semi-conducting material is Ge, described second
It can be the semiconductor material that Si, SiC, GaN, SiCN, diamond, GaAs etc. have energy gap higher than Ge to plant semi-conducting material
Material；When the first described semi-conducting material is GaAs, second of semi-conducting material can be SiC, GaN, SiCN, diamond
Deng the semi-conducting material with energy gap higher than GaAs；Second of semi-conducting material can be monocrystal material, polycrystalline
Material or non-crystalline material；
Diode between the base and emitter stage can be integrated in the diode or external two of chip internal
Pole pipe；Diode between the base and emitter stage can be PN diodes, can be Schottky diode or
The compound diode of PN- Schottky, can also be other types of diode；The diode for being integrated in chip internal can be with
Cellular region is produced on, the region outside cellular region can also be produced on；
The shape of the cellular of the insulated-gate bipolar transistor device can be the shape such as bar shaped, hexagon, circle, square,
Arrangement mode can be the mode such as bar shaped, hexagon, circle, square.
3. a kind of insulated-gate bipolar transistor device as claimed in claim 1, it is characterised in that：
Diode between the base and emitter stage is the Schottky diode being produced in a poly semiconductor area, described
Poly semiconductor area is made up of the first semi-conducting material；
The poly semiconductor area is separated by by an insulating medium layer with the base, the launch site and the drift region
From；The poly semiconductor area can be the groove profile goed deep into the base or/and the launch site or/and the drift region body
Structure or the planarized structure positioned at the base or/and the launch site or/and the drift region surface；It is described
Poly semiconductor area can be poly semiconductor area or the poly semiconductor of the second conduction type of the first conduction type
Area；
When the poly semiconductor area is the poly semiconductor area of the first conduction type, the polycrystalline of first conduction type is partly led
In body area comprising at least one compared with the first conduction type of heavy doping poly semiconductor area and at least one be lightly doped first
The poly semiconductor area of conduction type, the poly semiconductor area of first conduction type compared with heavy doping at least partly with it is described
The poly semiconductor area for the first conduction type being lightly doped directly is contacted；The polycrystalline of first conduction type compared with heavy doping half
Covered with an electrode of the conductor formation with Ohmic contact, the polycrystalline of first conduction type compared with heavy doping on conductor region
The electrode with Ohmic contact is the first conductive electrode of the Schottky diode in the poly semiconductor area on semiconductor region；
Covered with an electricity of the conductor formation with Schottky contacts in the poly semiconductor area of first conduction type being lightly doped
The electrode with Schottky contacts is that the polycrystalline is partly led in pole, the poly semiconductor area of first conduction type being lightly doped
Second conductive electrode of the Schottky diode in body area；
When the poly semiconductor area is the poly semiconductor area of the second conduction type, the polycrystalline of second conduction type is partly led
In body area comprising at least one compared with the second conduction type of heavy doping poly semiconductor area and at least one be lightly doped second
The poly semiconductor area of conduction type, the poly semiconductor area of second conduction type compared with heavy doping at least partly with it is described
The poly semiconductor area for the second conduction type being lightly doped directly is contacted；The polycrystalline of second conduction type compared with heavy doping half
Covered with an electrode of the conductor formation with Ohmic contact, the polycrystalline of second conduction type compared with heavy doping on conductor region
The electrode with Ohmic contact is the second conductive electrode of the Schottky diode in the poly semiconductor area on semiconductor region；
Covered with an electricity of the conductor formation with Schottky contacts in the poly semiconductor area of second conduction type being lightly doped
The electrode with Schottky contacts is that the polycrystalline is partly led in pole, the poly semiconductor area of second conduction type being lightly doped
First conductive electrode of the Schottky diode in body area；
Covered with a base stage of the conductor formation with Ohmic contact on the base, the base stage passes through wire and the polycrystalline
Second conductive electrode of the Schottky diode in semiconductor region is connected, and the emitter stage is partly led by wire with the polycrystalline
First conductive electrode of the Schottky diode in body area is connected.
4. a kind of insulated-gate bipolar transistor device as claimed in claim 1, it is characterised in that：
Diode between the base and emitter stage is the PN diodes being produced in a poly semiconductor area, the polycrystalline
Semiconductor region is made up of the first semi-conducting material；
The poly semiconductor area is separated by by an insulating medium layer with the base, the launch site and the drift region
From；The poly semiconductor area can be the groove profile goed deep into the base or/and the launch site or/and the drift region body
Structure or the planarized structure positioned at the base or/and the launch site or/and the drift region surface；It is described
Poly semiconductor area comprising at least one the first conduction type and at least one the second conduction type in poly semiconductor area
Poly semiconductor area, poly semiconductor the area at least part and the polycrystalline of second conduction type of first conduction type
Semiconductor region is directly contacted；
It is described covered with an electrode of the conductor formation with Ohmic contact in the poly semiconductor area of first conduction type
The electrode with Ohmic contact is the PN diodes in the poly semiconductor area in the poly semiconductor area of first conduction type
The first conductive electrode；There is Ohmic contact covered with a conductor formation in the poly semiconductor area of second conduction type
Electrode, during the electrode in the poly semiconductor area of second conduction type with Ohmic contact is the poly semiconductor area
PN diodes the second conductive electrode；
The base passes through wire and the polycrystalline half covered with a base stage of the conductor formation with Ohmic contact, the base stage
Second conductive electrode of the PN diodes in conductor region is connected, and the emitter stage passes through in wire and the poly semiconductor area
The first conductive electrode of PN diodes be connected.
5. a kind of insulated-gate bipolar transistor device as claimed in claim 1, it is characterised in that：
Diode between the base and emitter stage is the Schottky diode being produced in the base；
Covered with a base stage of the conductor formation with Schottky contacts on the base, there are Schottky contacts on the base
Base stage be the Schottky diode in the base the first conductive electrode；The base stage passes through wire and the emitter stage phase
Connection.
6. a kind of insulated-gate bipolar transistor device as claimed in claim 1, it is characterised in that：
Diode between the base and emitter stage is the PN diodes being produced in the base；
Semiconductor region containing at least one the first conduction type being lightly doped in the base, the base at least part with
The semiconductor region of first conduction type being lightly doped directly is contacted；The first conduction type being lightly doped in the base
Semiconductor region is made up of the first semi-conducting material；On the semiconductor region of the first conduction type being lightly doped in the base
Covered with a base stage of the conductor formation with Schottky contacts or Ohmic contact, the base stage is the poles of PN bis- in the base
First conductive electrode of pipe；The base stage is connected by wire with the emitter stage.
7. a kind of insulated-gate bipolar transistor device as claimed in claim 1, it is characterised in that：
Diode between the base and emitter stage is the Schottky being produced in the semiconductor region of second conduction type
Diode, the semiconductor region of second conduction type is made up of the first semi-conducting material；
The semiconductor region of second conduction type is contacted with the drift region and by a groove profile grid structure or/and one
Individual groove typed insulation dielectric area is isolated with the base and the launch site；Contain in the semiconductor region of second conduction type
There are the semiconductor region of at least one the second conduction type being lightly doped, the semiconductor region at least part of second conduction type
Directly contacted with the semiconductor region of second conduction type being lightly doped；
Covered with an electricity of the conductor formation with Schottky contacts on the semiconductor region of second conduction type being lightly doped
The electrode with Schottky contacts is second conduction type on pole, the semiconductor region of second conduction type being lightly doped
Semiconductor region in Schottky diode the first conductive electrode；Covered with one on the semiconductor region of second conduction type
The electrode with Ohmic contact is on individual electrode of the conductor formation with Ohmic contact, the semiconductor region of second conduction type
Second conductive electrode of the Schottky diode in the semiconductor region of second conduction type；
Covered with a base stage of the conductor formation with Ohmic contact on the base；The base stage passes through wire and described second
Second conductive electrode of the Schottky diode in the semiconductor region of conduction type is connected, and the emitter stage passes through wire and institute
The first conductive electrode for stating the Schottky diode in the semiconductor region of the second conduction type is connected.
8. a kind of insulated-gate bipolar transistor device as claimed in claim 1, it is characterised in that：
Diode between the base and emitter stage is the poles of PN bis- being produced in the semiconductor region of second conduction type
Pipe, the semiconductor region of second conduction type is made up of the first semi-conducting material；
The semiconductor region of second conduction type is contacted with the drift region and by a groove profile grid structure or/and one
Individual groove typed insulation dielectric area is isolated with the base and the launch site；Contain in the semiconductor region of second conduction type
There are the semiconductor region of at least one the first conduction type being lightly doped, the semiconductor region at least part of second conduction type
Directly contacted with the semiconductor region of first conduction type being lightly doped；
There is Schottky contacts or Europe covered with a conductor formation on the semiconductor region of first conduction type being lightly doped
There is the electricity of Schottky contacts or Ohmic contact on the electrode of nurse contact, the semiconductor region of first conduction type being lightly doped
Pole is the first conductive electrode of the PN diodes in the semiconductor region of second conduction type；The half of second conduction type
Covered with an electrode of the conductor formation with Ohmic contact on conductor region, have on the semiconductor region of second conduction type
The electrode of Ohmic contact is the second conductive electrode of the PN diodes in the semiconductor region of second conduction type；
Covered with a base stage of the conductor formation with Ohmic contact on the base；The base stage passes through wire and described second
Second conductive electrode of the PN diodes in the semiconductor region of conduction type is connected, and the emitter stage passes through wire and described the
First conductive electrode of the PN diodes in the semiconductor region of two conduction types is connected.
9. a kind of insulated-gate bipolar transistor device as any one of claim 1-8, it is characterised in that：
There is the diode of two series aiding connections between the base and emitter stage；Have one in the diode of described two series aiding connections
Individual diode is connected with the base, and another diode is connected with the emitter stage, two poles being connected with base stage
First conductive electrode of pipe is connected by the second conductive electrode of wire and the diode being connected with emitter stage；
It is described when the diode being connected with base is the Schottky diode being produced in base or PN diodes
The diode being connected with emitter stage can be the Schottky diode being produced in poly semiconductor area or PN diodes,
It can also be the Schottky diode being produced in the semiconductor region of second conduction type or PN diodes；
The diode being connected with base is the Schottky diode being produced in poly semiconductor area or the poles of PN bis-
Guan Shi, the diode being connected with emitter stage can be the Schottky two being produced on described in another in poly semiconductor area
Pole pipe or PN diodes, can also be the Schottky diode being produced in the semiconductor region of second conduction type or
PN diodes；
The diode being connected with base is the Schottky being produced in the semiconductor region of second conduction type
When diode or PN diodes, the diode being connected with emitter stage can be described is produced in poly semiconductor area
Schottky diode or PN diodes, can also be and be produced on described in another in semiconductor region of second conduction type
Schottky diode or PN diodes.
10. a kind of insulated-gate bipolar transistor device as any one of claim 1-8, it is characterised in that：
There is the diode of two or more series aiding connection between the base and emitter stage；Two poles of described two above series aiding connections
Pipe is by the Schottky diode being produced in base or PN diodes, the Xiao Te being produced in poly semiconductor area
Based diode or PN diodes, the Schottky diode being produced in the semiconductor region of second conduction type or PN bis-
At least one of pole pipe diode is constituted.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389902A (en) * | 2018-04-28 | 2018-08-10 | 四川大学 | A kind of inverse conductivity type IGBT containing reverse groove grid |
| CN109686787A (en) * | 2018-11-20 | 2019-04-26 | 电子科技大学 | A kind of IGBT device with carrier accumulation layer using diode clamp |
| CN114551570A (en) * | 2022-02-18 | 2022-05-27 | 电子科技大学 | Low-power consumption power device |
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| US20100308370A1 (en) * | 2009-06-04 | 2010-12-09 | Force-Mos Technology Corporation | Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up |
| US20130248982A1 (en) * | 2011-06-13 | 2013-09-26 | Semiconductor Components Industries, Llc | Semiconductor device with enhanced mobility and method |
| CN104835841A (en) * | 2015-05-08 | 2015-08-12 | 邓华鲜 | Structure of IGBT chip |
| CN105118830A (en) * | 2015-08-03 | 2015-12-02 | 电子科技大学 | Enhanced HEMT of integrated SBD |
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| US20100308370A1 (en) * | 2009-06-04 | 2010-12-09 | Force-Mos Technology Corporation | Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up |
| US20130248982A1 (en) * | 2011-06-13 | 2013-09-26 | Semiconductor Components Industries, Llc | Semiconductor device with enhanced mobility and method |
| CN104835841A (en) * | 2015-05-08 | 2015-08-12 | 邓华鲜 | Structure of IGBT chip |
| CN105118830A (en) * | 2015-08-03 | 2015-12-02 | 电子科技大学 | Enhanced HEMT of integrated SBD |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108389902A (en) * | 2018-04-28 | 2018-08-10 | 四川大学 | A kind of inverse conductivity type IGBT containing reverse groove grid |
| CN109686787A (en) * | 2018-11-20 | 2019-04-26 | 电子科技大学 | A kind of IGBT device with carrier accumulation layer using diode clamp |
| CN114551570A (en) * | 2022-02-18 | 2022-05-27 | 电子科技大学 | Low-power consumption power device |
| CN114551570B (en) * | 2022-02-18 | 2023-05-26 | 电子科技大学 | Low-power consumption power device |
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