CN207602575U - Promote the low on-state voltage drop IGBT of latch-up immunity - Google Patents
Promote the low on-state voltage drop IGBT of latch-up immunity Download PDFInfo
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- CN207602575U CN207602575U CN201721858600.7U CN201721858600U CN207602575U CN 207602575 U CN207602575 U CN 207602575U CN 201721858600 U CN201721858600 U CN 201721858600U CN 207602575 U CN207602575 U CN 207602575U
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Abstract
The utility model is related to a kind of IGBT device, especially a kind of low pass state IGBT for promoting latch-up immunity belongs to the technical field of IGBT device.The carrier guide body of the first conduction type is additionally provided in the first conduction type drift region, the carrier guide body includes being located at first conduction type the first carrier guide layer immediately below cellular groove and first conduction type the second carrier guide layer below the second conduction type base region；First conduction type the second carrier guide layer is symmetric below the second conduction type base region, the top of first conduction type the second carrier guide layer is contacted with the outer wall of the second conduction type base region and adjacent cellular groove, and the lower end of first conduction type the second carrier guide layer is contacted with first conduction type the first carrier guide layer.The utility model is compact-sized, can improve the latch-up immunity of IGBT in the case where not influencing IGBT normal work characteristics, realize low on-state voltage drop, securely and reliably.
Description
Technical field
The utility model is related to a kind of IGBT device, especially a kind of low pass state IGBT for promoting latch-up immunity belongs to
The technical field of IGBT device.
Background technology
IGBT is a kind of device representative in power semiconductor, with driving is easy, control is simple, switchs
The advantages that frequency is high, electric conduction forces down, on state current is big, loss is small, is the key core component automatically controlled with power conversion,
And latch problem is to influence the one of the major reasons of IGBT reliabilities.
As depicted in figs. 1 and 2, it is basic IGBT structure and its equivalent circuit, it can be seen from Fig. 1 that in N-type IGBT structure
Contain the crystalline substance of the four of N-P-N-P layers of three knot being made of N+ emitter region 3, p-type base area 7, N-type drift region 8 and P+ collector areas 9
Brake tube structure.Explain that the mechanism of latch occurs for IGBT by the equivalent circuit of Fig. 2：When IGBT is worked normally, parasitic thyristor
It will not open, this is because the shorted emitter structure that N+ emitter region 3 and p-type base area 7 are formed under running current ensure that
The emitter junction of upper strata NPN pipes does not occur that (In1 is connected>>IP1>>IP2), IGBT electric currents are controlled by grid voltage, are had full
And characteristic；When the current density of IGBT is excessive, excessively high hole current flows through the 7 (electric current of p-type base area of 3 lower section of N+ emitter region
Ip2), which generates pressure drop on the path resistor Rp-body of p-type base area, and p-type base area 7 and N+ can be made if pressure drop is sufficiently large
The PN junction positively biased that emitter region 3 is formed, the NPN pipes on upper strata turn on into amplification region work, and drive the PNP pipe of lower floor, and PNP pipe is opened
Positive feedback is formed to upper strata NPN pipes in turn again after opening, Regenerative feedback effect enables IGBT grids to lose the control to electric current
Power, electric current increase rapidly, and after electric current increases to a certain extent, may burn IGBT device overheat, therefore, latch phenomenon limit
The maximum trouble free service electric current of IGBT is made.
IGBT occur latch critical condition be：α NPN+ α PNP >=1, wherein, α NPN and α PNP are upper strata NPN pipes respectively
With the latch-up opened base current gain, to inhibit parasitic thyristor it can be seen from the condition of lower floor PNP pipe, just must
Palpus reduction upper strata NPN pipes open base current gain with lower floor's PNP pipe, since lower floor's PNP pipe of wide base area is in the normal works of IGBT
As when need conduct on state current, the conduction voltage drop of IGBT can be increased by reducing its current gain, and upper strata NPN is usually not involved in
The conduction of IGBT conducting state electric currents, it is therefore desirable to reduce the current gain of upper strata NPN pipes.
At present, it is in the doping concentration for increasing p-type base area, to reduce the p-type base area 7 of 3 lower section of N+ areas using Prevention method
Path resistor, to prevent N+ emitter region 3/P types base area 7 from binding up one's hair raw positively biased, but this method is likely to increase the threshold value electricity of IGBT
It presses and reduces reversed pressure resistance.
To sum up, existing conventional IGBT device has higher on-state voltage drop and low latch-up immunity, especially in height
Pressure further develops in application, being unfavorable for IGBT in high pressure, high reliability, low-power consumption.
Invention content
The purpose of the utility model is to overcome the deficiencies in the prior art, provide a kind of the low of promotion latch-up immunity
On-state voltage drop IGBT, it is compact-sized, the anti-latch energy of IGBT in the case where not influencing IGBT normal work characteristics, can be improved
Power realizes low on-state voltage drop, securely and reliably.
According to technical solution provided by the utility model, the low on-state voltage drop IGBT for promoting latch-up immunity, including
Semiconductor substrate and positioned at the cellular region at the semiconductor substrate center, the semiconductor substrate includes the drift of the first conduction type
Move area and the second conduction type base region positioned at the first conduction type drift region internal upper part；
The cellular region includes several cellular grooves, and the cellular groove is located in the second conduction type base region, and cellular
The depth of groove is stretched into the first conduction type drift region below the second conduction type base region；Between adjacent cellular groove
The first conduction type source region of setting, the first conduction type source region connect with the side wall of corresponding cellular groove in two conduction type base regions
It touches, setting trench gate structure in cellular groove；Emitter structure is set on the first conduction type drift region；
The carrier guide body of the first conduction type, the carrier are additionally provided in the first conduction type drift region
Guide body is including first conduction type the first carrier guide layer immediately below cellular groove and positioned at the second conductive-type
First conduction type the second carrier guide layer below type base area；
First conduction type the second carrier guide layer is symmetric below the second conduction type base region, and first is conductive
The top of type the second carrier guide layer is contacted with the outer wall of the second conduction type base region and adjacent cellular groove, and first leads
The lower end of electric the second carrier of type guide layer is contacted with first conduction type the first carrier guide layer.
IGBT device horizontal direction and from close to grid center be directed toward gate edge direction on, the first conduction type
The impurity doping concentration of first carrier guide layer continuously decreases.
First the second carrier of conduction type guide layer is in inverted trapezoidal, and first conduction type the second carrier guide layer is equal
Even doping or non-uniform doping；
When first the second carrier of conduction type guide layer is non-uniform doping, in the transverse direction of IGBT device, first leads
Electric the second carrier of type guide layer includes the subregion of n different levels of doping, on the direction far from trench gate, subregion
Doping concentration continuously decrease.
The second conduction type floating area is also set up immediately below the cellular groove, the second conduction type floating area is located at
The top of first conduction type the first carrier guide layer, the outer wall of the second conduction type floating area and cellular groove slot bottom and
First the second carrier of conduction type guide layer contacts.
Also set up the second conduction type emitter in the second conduction type base region between adjacent cellular groove, described second
Conduction type emitter includes second the first emitter region of conduction type and under first emitter region of the second conduction type
Second the second emitter region of conduction type of side；
Emitter structure includes emitter metal, the emitter metal and the first conduction type source region, the second conductive-type
First conduction type source contact of type the first emitter region Ohmic contact, second the first emitter region of conduction type and both sides, second
The width of the second emitter region of conduction type is more than the width of second the first emitter region of conduction type.
The trench gate structure includes the insulation gate oxide and the filling that are covered on cellular trench wall and bottom wall
Grid polycrystalline silicon in the cellular groove, the grid polycrystalline silicon by the side wall of insulate gate oxide and cellular groove,
Bottom wall is dielectrically separated from；Grid polycrystalline silicon is dielectrically separated from by insulating medium layer and emitter structure.
Further include the collector structure for being set to semiconductor-based back, the collector structure for transparent anode structure or
Short-circuit anode construction.
The semiconductor substrate further includes the first conduction type field cut-off immediately below the first conduction type drift region
Layer sets the second conduction type collecting zone, in second conductive-type in the underface of the first conduction type field cutoff layer
Collector electrode metal, the collector electrode metal and the second conduction type collecting zone Ohmic contact are set on type collecting zone, and first is conductive
Type field cutoff layer is between the first conduction type drift layer and the second conduction type collecting zone, and the first conduction type field is cut
Only layer abuts the first conduction type drift layer, the second conduction type collecting zone.
It is conductive for N-type power IGBT device, first in " first conduction type " and " the second conduction type " the two
Type refers to N-type, and the second conduction type is p-type；For p-type power IGBT device, the first conduction type and the second conduction type institute
The type of finger and N-type semiconductor device are exactly the opposite.
The advantages of the utility model：Second conduction type base region sets the second conduction type emitter, the second conduction type
Second the first emitter region of conduction type of emitter and emitter metal Ohmic contact, are provided by the second conduction type emitter
Low resistance path since the second conduction type emitter is distributed in the second conduction type base region in inverted T-shaped, efficiently avoids threshold
Threshold voltage reduces with breakdown voltage and improves latch-up immunity.In the lower section of cellular groove, setting the first conduction type first carries
Sub- guide layer is flowed, is guided grid low-side current, while in the second conduction type base to area of grid both ends using built-in field
First conduction type the second carrier guide layer of inverted trapezoidal distribution that area is introduced in lower section, first the first carrier of conduction type
Guide layer, first conduction type the second carrier guide layer due to the first conduction type drift region have certain concentration difference,
Its built-in field can in the horizontal guide carrier so that the current density below the first conduction type source region subtracts
Small, by electric current, from area of grid to the second conduction type emitter, lower section guides to a greater extent, and the first conduction type second carries
The discontinuous distribution for flowing sub- guide layer in the second conduction type base region central lower also helps holding high voltage, has avoided load
Breakdown voltage caused by flowing the high concentration of sub- guide layer declines.In addition, first the first carrier of conduction type guide layer, first leading
Electric the second carrier of type guide layer also has the function of carrier accumulation layer, and having largely reduces conduction voltage drop, safety
Reliably.
Description of the drawings
Fig. 1 is the structure sectional view of existing IGBT device.
Fig. 2 is the equivalent circuit diagram of existing IGBT device.
Fig. 3 is the structure diagram of the utility model.
Fig. 4 is the schematic diagram that the second carrier of the utility model N-type guide layer uses non-uniform doping.
Fig. 5 is the schematic diagram that the utility model sets p-type floating area.
Reference sign：1- emitter metals, 2- insulating medium layers, 3-N+ source regions, 4-P+ contact zones, 5- gate polycrystallines
Silicon, 6- insulation gate oxide, 7-P types base area, 8- types drift region, 9-P+ collecting zones, 10- collector electrode metals, the cut-off of 11-N types field
Layer, the first emitter region of 12-P types, the second emitter region of 13-P types, the second carrier of 14-N types guide layer, the first carrier of 15-N types
Guide layer and 16-P type floatings area.
Specific embodiment
With reference to specific drawings and examples, the utility model is described in further detail.
As shown in Figure 2：In order in the case where not influencing IGBT normal work characteristics, improve the anti-latch energy of IGBT
Power realizes low on-state voltage drop, and by taking N-type IGBT device as an example, the utility model includes semiconductor substrate and partly led positioned at described
The cellular region at structure base board center, the semiconductor substrate include N-type drift region 8 and positioned at 8 internal upper parts of N-type drift region
P-type base area 7；
The cellular region includes several cellular grooves, and the cellular groove is located in p-type base area 7, and the depth of cellular groove
Degree is stretched into the N-type drift region 8 of 7 lower section of p-type base area；Setting N+ source regions 3, N+ sources in p-type base area 7 between adjacent cellular groove
Area 3 is contacted with the side wall of corresponding cellular groove, setting trench gate structure in cellular groove；Transmitting is set in N-type drift region 8
Pole structure；
The carrier guide body of N-type is additionally provided in the N-type drift region 8, the carrier guide body includes being located at member
The first carrier of N-type guide layer 15 immediately below born of the same parents' groove and N-type the second carrier guide layer positioned at 7 lower section of p-type base area
14；
The second carrier of N-type guide layer 14 is symmetric below p-type base area 7, the second carrier of N-type guide layer 14
Top is contacted with the outer wall of p-type base area 7 and adjacent cellular groove, lower end and the N-type first of the second carrier of N-type guide layer 14
Carrier guide layer 15 contacts.
Specifically, common semi-conducting material, such as silicon may be used in semiconductor substrate, can specifically carry out as needed
Selection, the upper surface of N-type drift region 8 are the upper surface of entire semiconductor substrate, and p-type base area 7 is located in N-type drift region 8, generally
Ground, p-type base area 7 extend vertically downward from the upper surface of N-type drift region 8, and p-type base area 7 is formed two layers up and down with N-type drift region 8
Distribution.
Semiconductor substrate is performed etching using the art common technological means, to obtain cellular groove, cellular
The upper surface of the slave N-type drift region 8 of groove extends vertically downward, and the slot bottom of cellular groove is located at the lower section of p-type base area 7, so as to,
Between p-type base area 7 in cellular region is spaced in adjacent cellular groove, p-type base area 7 is contacted with the external wall of upper portion of cellular groove.
On the section of the IGBT device, N+ source regions 3 are symmetrically distributed in p-type base area 7, the N+ source regions in p-type base area 7
3 are not in contact with each other, and N+ source regions 3 are contacted with close to the outer wall of cellular groove, and setting trench gate structure, passes through trench gate in cellular groove
The grid of IGBT device can be formed.The emitter of IGBT device can be formed by emitter structure.
On the section of the IGBT device, carrier guide body be N conduction types, the first carrier of N-type guide layer 15
Positioned at the underface of cellular groove, the first carrier of N-type guide layer 15 is in N-type drift region 8 in strip, the first current-carrying of N-type
The length of sub- guide layer 15 is more than the width of cellular groove, i.e. the end of the first carrier of N-type guide layer 15 is located at p-type base area 7
Lower section, there are the overlapping of space between the first carrier of N-type guide layer 15 and p-type base area 7.The second carrier of N-type guide layer 14
The lower section of p-type base area 7 is symmetrically distributed in, is not in contact with each other between two the second carrier of N-type guide layers 14 of 7 lower section of p-type base area.
The upper end of the second carrier of N-type guide layer 14 is contacted with 7 lower surface of p-type base area, the side of the second carrier of N-type guide layer 14 with
The outer wall contact of neighbouring cellular groove, the lower surface of p-type base area 7 specifically refer to p-type base area 7 and are located in N-type drift region 8 and neighbour
One side surface of nearly cellular groove slot bottom.
Further, it is directed toward on the direction of gate edge in the horizontal direction of IGBT device and from close to grid center, N-type
The impurity doping concentration of first carrier guide layer 15 continuously decreases.In the utility model embodiment, grid center is cellular
The center of groove, gate edge are the sidewall direction of cellular groove.
Further, the second carrier of N-type guide layer 14 is in inverted trapezoidal, and the second carrier of N-type guide layer 14 is uniformly mixes
Miscellaneous or non-uniform doping；
When the second carrier of N-type guide layer 14 is non-uniform doping, in the transverse direction of IGBT device, the second carrier of N-type
Guide layer 15 includes the subregion of n different levels of doping, and on the direction far from trench gate, the doping concentration of subregion is gradual
It reduces.
In Fig. 2, the second carrier of N-type guide layer 14 is the situation using Uniform Doped, and in Fig. 3, the second carrier of N-type draws
Conducting shell 14 uses the situation of non-uniform doping.The second carrier of N-type guide layer 14 in inverted trapezoidal, in particular to, the second current-carrying of N-type
The width that sub- guide layer 14 contacts one end with p-type base area 7 draws more than the second carrier of N-type guide layer 14 with the first carrier of N-type
The width of conducting shell 15.When the subregion of the n different levels of doping of use of the second carrier of N-type guide layer 15, n >=3, in IGBT
On the longitudinal direction of device, the doping concentration per sub-regions is identical；The doping concentration of different subregions is different, the second carrier of N-type
The side that guide layer 15 is contacted with cellular groove outer wall be close to trench gate direction, the second carrier of N-type guide layer 15 it is another
Side is the direction far from trench gate.
As shown in figure 5, also setting up p-type floating area 16 immediately below the cellular groove, p-type floating area 16 is located at N-type
The top of first carrier guide layer 15, p-type floating area 16 and the outer wall and the second carrier of N-type of cellular groove slot bottom guide
Layer 14 contacts.
In the utility model embodiment, p-type floating area 16 can inject to be formed by low energy, and member is wrapped up in p-type floating area 16
The outer wall of born of the same parents' groove slot bottom, and p-type floating area 16 is contacted with the second carrier of N-type guide layer 14, can be with by p-type floating area 16
Pressure resistance is improved, reduces the electric field of cellular channel bottom, reduces feedback capacity.
In addition, also set up p-type emitter in p-type base area 7, the p-type emitter include the first emitter region of p-type 12 and
The second emitter region of p-type 13 positioned at 2 lower section of the first emitter region of p-type；
Emitter structure includes emitter metal 1, the emitter metal 1 and N+ source regions 3,12 Europe of the first emitter region of p-type
Nurse contacts, and the first emitter region of p-type 12 is contacted with the N+ source regions 3 of both sides, and the width of the second emitter region of p-type 13 is sent out more than p-type first
Penetrate the width in area 12.
In the utility model embodiment, p-type emitter is located in p-type base area 7, and the first emitter region of p-type 12 is distributed in vertical,
P-type the second emitter region 13 is laterally distributed, and the first emitter region of p-type 12 extends vertically downward from the upper surface of N-type drift region 8, p-type
The width of second emitter region 13 is more than the width of the first emitter region of p-type 12, the first emitter region of p-type 12 and the second emitter region of p-type 13
Between form inverted T-type structure, therefore, there are space friendships for the N+ source regions 3 of the second emitter region of p-type 13 and 12 both sides of the first emitter region of p-type
It is folded.The first emitter region of p-type 12, the doping concentration of the second emitter region of p-type 13 are more than the doping concentration of p-type base area 7, emitter metal
1 with N+ source regions 3,12 Ohmic contact of the first emitter region of p-type, so as to form the emitter of IGBT device.
When it is implemented, the trench gate structure includes the insulation gate oxidation being covered on cellular trench wall and bottom wall
Layer 6 and the grid polycrystalline silicon 5 being filled in the cellular groove, the grid polycrystalline silicon 5 pass through gate oxide 6 and the member of insulating
Side wall, the bottom wall of born of the same parents' groove are dielectrically separated from；Grid polycrystalline silicon 5 is dielectrically separated from by insulating medium layer 2 with emitter structure.
In the utility model embodiment, thermal oxide growth may be used for insulation gate oxide 6 or other modes are arranged on member
In born of the same parents' groove, insulation gate oxide 6 covers the side wall and bottom wall of cellular groove, and grid polycrystalline silicon 5 is filled in cellular groove,
Grid polycrystalline silicon 5 is dielectrically separated from by insulating medium layer 2 and emitter metal 1, and insulating medium layer 2 is generally covered in cellular groove
Notch, insulating medium layer 2 is supported on the upper surface of N-type drift region 8.
In addition, in order to form complete IGBT device, the collector structure for being set to semiconductor-based back is further included,
The collector structure is transparent anode structure or short-circuit anode construction.
Specifically, the semiconductor substrate further includes the N-type field cutoff layer 11 immediately below N-type drift region 8, described
The underface setting P+ collecting zones 9 of N-type field cutoff layer 11, set collector electrode metal 10, the current collection on the P+ collecting zones 9
Pole metal 10 and 9 Ohmic contact of P+ collecting zones, N-type field cutoff layer 11 is between N-type drift layer 8 and P+ collecting zones 9, and N-type
Field cutoff layer 11 abuts N-type drift layer 8, P+ collecting zones 9.In the utility model embodiment, pass through collector electrode metal 10, P+ current collections
Area 9 can form the collector of IGBT device.
The utility model p-type base area 7 sets p-type emitter, the first emitter region of p-type 12 and the emitter gold of p-type emitter
Belong to 1 Ohmic contact, low resistance path is provided by p-type emitter, since p-type emitter is distributed in p-shaped base area 7 in inverted T-shaped, have
Avoiding threshold voltage and breakdown voltage to effect reduces and improves latch-up immunity.In the lower section of cellular groove setting N-type the
One carrier guide layer 15 is guided grid low-side current, while in p-shaped base area 7 to area of grid both ends using built-in field
The second carrier of the N-type guide layer 14 of inverted trapezoidal distribution introduced in lower section, the first carrier of N-type guide layer 15, N-type second carry
Flow sub- guide layer 14 due to N-type drift region 8 have certain concentration difference, built-in field can in the horizontal to carrier into
Row guiding so that the current density of the lower section of N+ source regions 3 reduces, to a greater extent by electric current from area of grid to p-type emitter under
Side's guiding.In addition, the first carrier of N-type guide layer 15, the second carrier of N-type guide layer 14 also have the work of carrier accumulation layer
With having largely reduces conduction voltage drop, securely and reliably.
Claims (8)
1. a kind of low on-state voltage drop IGBT for promoting latch-up immunity, including semiconductor substrate and positioned at the semiconductor substrate
The cellular region at center, the semiconductor substrate include the first conduction type drift region and drift about positioned at first conduction type
Second conduction type base region of area's internal upper part；
The cellular region includes several cellular grooves, and the cellular groove is located in the second conduction type base region, and cellular groove
Depth stretch into the first conduction type drift region below the second conduction type base region；Second between adjacent cellular groove leads
First conduction type source region is set in electric type base area, the first conduction type source region is contacted with the side wall of corresponding cellular groove,
Setting trench gate structure in cellular groove；Emitter structure is set on the first conduction type drift region；It is characterized in that：
The carrier guide body of the first conduction type, the carrier guiding are additionally provided in the first conduction type drift region
Body is including first conduction type the first carrier guide layer immediately below cellular groove and positioned at the second conduction type base
First conduction type the second carrier guide layer below area；
First conduction type the second carrier guide layer is symmetric below the second conduction type base region, the first conduction type
The top of second carrier guide layer is contacted with the outer wall of the second conduction type base region and adjacent cellular groove, the first conductive-type
The lower end of type the second carrier guide layer is contacted with first conduction type the first carrier guide layer.
2. the low on-state voltage drop IGBT according to claim 1 for promoting latch-up immunity, it is characterized in that：In IGBT device
Horizontal direction and from close to grid center be directed toward gate edge direction on, first conduction type the first carrier guide layer it is miscellaneous
Matter doping concentration continuously decreases.
3. the low on-state voltage drop IGBT according to claim 1 for promoting latch-up immunity, it is characterized in that：First conduction type
Second carrier guide layer is in inverted trapezoidal, and first the second carrier of conduction type guide layer is Uniform Doped or non-uniform doping；
When first the second carrier of conduction type guide layer is non-uniform doping, in the transverse direction of IGBT device, the first conductive-type
The second carrier of type guide layer includes the subregion of n different levels of doping, and on the direction far from trench gate, subregion is mixed
Miscellaneous concentration continuously decreases.
4. the low on-state voltage drop IGBT of the promotion latch-up immunity according to claims 1 or 2 or 3, it is characterized in that：Described
The second conduction type floating area is also set up immediately below cellular groove, the second conduction type floating area is located at the first conduction type
The top of one carrier guide layer, the outer wall and the first conduction type of the second conduction type floating area and cellular groove slot bottom the
Two carrier guide layers contact.
5. the low on-state voltage drop IGBT according to claim 1 for promoting latch-up immunity, it is characterized in that：In adjacent cellular ditch
Also set up the second conduction type emitter in the second conduction type base region between slot, the second conduction type emitter includes the
Two the first emitter region of conduction type and the second conduction type second below first emitter region of the second conduction type
Emitter region；
Emitter structure includes emitter metal, the emitter metal and the first conduction type source region, the second conduction type the
First conduction type source contact of one emitter region Ohmic contact, second the first emitter region of conduction type and both sides, second is conductive
The width of the second emitter region of type is more than the width of second the first emitter region of conduction type.
6. the low on-state voltage drop IGBT according to claim 1 for promoting latch-up immunity, it is characterized in that：The trench gate knot
Structure includes the insulation gate oxide being covered on cellular trench wall and bottom wall and the grid being filled in the cellular groove
Pole polysilicon, the grid polycrystalline silicon are dielectrically separated from by side wall, the bottom wall of insulate gate oxide and cellular groove；Gate polycrystalline
Silicon is dielectrically separated from by insulating medium layer and emitter structure.
7. the low on-state voltage drop IGBT according to claim 1 for promoting latch-up immunity, it is characterized in that：It further includes and is set to
The collector structure of semiconductor-based back, the collector structure are transparent anode structure or short-circuit anode construction.
8. the low on-state voltage drop IGBT according to claim 1 for promoting latch-up immunity, it is characterized in that：It is described semiconductor-based
Plate further includes the first conduction type field cutoff layer immediately below the first conduction type drift region, in first conduction type
The underface of field cutoff layer sets the second conduction type collecting zone, and collector gold is set on the second conduction type collecting zone
Belong to, the collector electrode metal and the second conduction type collecting zone Ohmic contact, the first conduction type field cutoff layer are led positioned at first
Between electric type drift layer and the second conduction type collecting zone, and the first conduction type field cutoff layer abuts the drift of the first conduction type
Move layer, the second conduction type collecting zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721858600.7U CN207602575U (en) | 2017-12-27 | 2017-12-27 | Promote the low on-state voltage drop IGBT of latch-up immunity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721858600.7U CN207602575U (en) | 2017-12-27 | 2017-12-27 | Promote the low on-state voltage drop IGBT of latch-up immunity |
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ID=62768897
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| CN201721858600.7U Withdrawn - After Issue CN207602575U (en) | 2017-12-27 | 2017-12-27 | Promote the low on-state voltage drop IGBT of latch-up immunity |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767003A (en) * | 2018-08-29 | 2018-11-06 | 江苏中科君芯科技有限公司 | The IGBT device of high latch-up immunity |
| CN117476757A (en) * | 2023-12-28 | 2024-01-30 | 深圳天狼芯半导体有限公司 | IGBT with high latch-up resistance and preparation method |
-
2017
- 2017-12-27 CN CN201721858600.7U patent/CN207602575U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767003A (en) * | 2018-08-29 | 2018-11-06 | 江苏中科君芯科技有限公司 | The IGBT device of high latch-up immunity |
| CN108767003B (en) * | 2018-08-29 | 2023-09-22 | 江苏中科君芯科技有限公司 | IGBT device with high latch-up resistance |
| CN117476757A (en) * | 2023-12-28 | 2024-01-30 | 深圳天狼芯半导体有限公司 | IGBT with high latch-up resistance and preparation method |
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