CN110246531B - 电阻式存储器件及其操作方法 - Google Patents

电阻式存储器件及其操作方法 Download PDF

Info

Publication number
CN110246531B
CN110246531B CN201811621955.3A CN201811621955A CN110246531B CN 110246531 B CN110246531 B CN 110246531B CN 201811621955 A CN201811621955 A CN 201811621955A CN 110246531 B CN110246531 B CN 110246531B
Authority
CN
China
Prior art keywords
cell
sub
array
cells
reference cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811621955.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN110246531A (zh
Inventor
李宰演
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
SK Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SK Hynix Inc filed Critical SK Hynix Inc
Publication of CN110246531A publication Critical patent/CN110246531A/zh
Application granted granted Critical
Publication of CN110246531B publication Critical patent/CN110246531B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/838—Masking faults in memories by using spares or by reconfiguring using programmable devices with substitution of defective spares
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current
CN201811621955.3A 2018-03-09 2018-12-28 电阻式存储器件及其操作方法 Active CN110246531B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180027910A KR102445560B1 (ko) 2018-03-09 2018-03-09 저항성 메모리 장치 및 그의 동작 방법
KR10-2018-0027910 2018-03-09

Publications (2)

Publication Number Publication Date
CN110246531A CN110246531A (zh) 2019-09-17
CN110246531B true CN110246531B (zh) 2023-04-11

Family

ID=67843387

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811621955.3A Active CN110246531B (zh) 2018-03-09 2018-12-28 电阻式存储器件及其操作方法

Country Status (3)

Country Link
US (1) US10714174B2 (ko)
KR (1) KR102445560B1 (ko)
CN (1) CN110246531B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102599662B1 (ko) * 2018-07-27 2023-11-07 삼성전자주식회사 주어진 동작 환경에 적합한 쓰기 전류에 기초하여 동작하는 메모리 장치 및 쓰기 전류를 구동하는 방법
US11081151B2 (en) * 2019-09-26 2021-08-03 Intel Corporation Techniques to improve a read operation to a memory array
JP2021096887A (ja) * 2019-12-16 2021-06-24 ソニーセミコンダクタソリューションズ株式会社 記憶装置
US11823739B2 (en) * 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits
US11727986B2 (en) * 2020-04-06 2023-08-15 Crossbar, Inc. Physically unclonable function (PUF) generation involving programming of marginal bits
US11423984B2 (en) 2020-04-06 2022-08-23 Crossbar, Inc. Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chip
US11574657B2 (en) 2020-09-28 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, sense amplifier and method for mismatch compensation
US11942144B2 (en) 2022-01-24 2024-03-26 Stmicroelectronics S.R.L. In-memory computation system with drift compensation circuit

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7203112B2 (en) * 2004-08-05 2007-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple stage method and system for sensing outputs from memory cells
JP3962048B2 (ja) * 2004-09-28 2007-08-22 株式会社東芝 半導体メモリ
JP4853735B2 (ja) * 2005-10-18 2012-01-11 日本電気株式会社 Ｍｒａｍ、及びその動作方法
US7286429B1 (en) * 2006-04-24 2007-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. High speed sensing amplifier for an MRAM cell
JP4987616B2 (ja) * 2006-08-31 2012-07-25 株式会社東芝 磁気ランダムアクセスメモリ及び抵抗ランダムアクセスメモリ
WO2008133087A1 (ja) * 2007-04-17 2008-11-06 Nec Corporation 半導体記憶装置及びその動作方法
KR20110120013A (ko) * 2010-04-28 2011-11-03 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
US9042152B2 (en) * 2011-08-25 2015-05-26 Samsung Electronics Co., Ltd. Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device
KR101298190B1 (ko) * 2011-10-13 2013-08-20 에스케이하이닉스 주식회사 저항성 메모리 장치, 그 레이아웃 구조 및 센싱 회로
CN104160450B (zh) * 2012-03-07 2017-06-09 松下知识产权经营株式会社 非易失性半导体存储装置
KR101929983B1 (ko) * 2012-07-18 2018-12-17 삼성전자주식회사 저항성 메모리 셀을 갖는 반도체 메모리 장치 및 그 테스트 방법
KR102056853B1 (ko) 2013-01-18 2020-01-22 삼성전자주식회사 저항성 메모리 장치 및 그에 따른 동작 제어방법
KR102049258B1 (ko) * 2013-03-15 2019-11-28 삼성전자주식회사 레퍼런스 셀을 포함하는 불휘발성 메모리 장치 및 그것의 데이터 관리 방법 및
KR102127137B1 (ko) * 2013-12-03 2020-06-26 삼성전자주식회사 셀 트랜지스터들의 계면 상태를 제어하여 센싱 마진을 보상할 수 있는 저항성 메모리 장치
KR102264162B1 (ko) * 2014-10-29 2021-06-11 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작 방법
KR102292643B1 (ko) 2015-02-17 2021-08-23 삼성전자주식회사 저항성 메모리 장치, 저항성 메모리 시스템 및 저항성 메모리 시스템의 동작 방법
KR20170055222A (ko) 2015-11-11 2017-05-19 삼성전자주식회사 리페어 단위 변경 기능을 가지는 메모리 장치 및 메모리 시스템
KR102519458B1 (ko) * 2016-11-01 2023-04-11 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 동작 방법

Also Published As

Publication number Publication date
KR20190106417A (ko) 2019-09-18
US10714174B2 (en) 2020-07-14
CN110246531A (zh) 2019-09-17
US20190279709A1 (en) 2019-09-12
KR102445560B1 (ko) 2022-09-22

Similar Documents

Publication Publication Date Title
CN110246531B (zh) 电阻式存储器件及其操作方法
US10937519B2 (en) Memory devices, memory systems and methods of operating memory devices
US7817465B2 (en) Phase change random access memory
KR100597636B1 (ko) 상 변화 반도체 메모리 장치
US7570511B2 (en) Semiconductor memory device having a three-dimensional cell array structure
KR101237005B1 (ko) 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템, 및 이의 구동 방법
EP1965391B1 (en) Non-volatile semiconductor memory device
KR102480012B1 (ko) 오프 셀들의 전류를 보상하는 메모리 장치 및 그것의 동작 방법
KR100674992B1 (ko) 구동전압 레벨을 변경할 수 있는 상 변화 메모리 장치
US8271856B2 (en) Resistive memory devices and methods of controlling operations of the same
US8345464B2 (en) Resistive memory devices having a stacked structure and methods of operation thereof
US7924639B2 (en) Nonvolatile memory device using resistance material
US20150155037A1 (en) Resistive memory device capable of increasing sensing margin by controlling interface states of cell transistors
US11043268B2 (en) Resistive memory devices and methods of operating resistive memory devices including adjustment of current path resistance of a selected memory cell in a resistive memory device
US8045363B2 (en) Variable resistance memory devices including arrays of different sizes
US8228711B2 (en) Bi-directional resistive memory devices and related memory systems and methods of writing data
KR20180097854A (ko) 메모리 장치 및 그 동작 방법
KR20090066823A (ko) 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템, 및 이의 구동 방법
CN113889166A (zh) 非易失性存储器和操作非易失性存储器的方法
US20170192704A1 (en) Memory systems and electronic devices including nonvolatile memory modules
KR20210100404A (ko) 저항성 메모리 장치 및 저항성 메모리 장치의 프로그램 방법
CN108615540B (zh) 存储器装置和操作存储器装置的方法
US8854907B2 (en) Semiconductor device for supplying and measuring electric current through a pad
CN114596895A (zh) 记忆体装置、记忆体系统以及记忆体装置的操作方法
KR20070024803A (ko) 상변화 메모리 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant