CN110235231B - 半导体装置的制造方法及制造装置 - Google Patents

半导体装置的制造方法及制造装置 Download PDF

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CN110235231B
CN110235231B CN201880009167.0A CN201880009167A CN110235231B CN 110235231 B CN110235231 B CN 110235231B CN 201880009167 A CN201880009167 A CN 201880009167A CN 110235231 B CN110235231 B CN 110235231B
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liquid
bonding
bonded
substrate
liquid tank
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CN110235231A (zh
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中村智宣
岛津武仁
鱼本幸
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Tohoku University NUC
Shinkawa Ltd
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Tohoku University NUC
Shinkawa Ltd
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Abstract

本发明提供一种半导体装置的制造方法及制造装置，其能够利用更简单的顺序及构成来将晶片组件直接接合于接合对象物。将芯片组件的电极部直接接合于接合对象物即基板上所设置的被接合部的接合方法，包括：将所述基板载置于液槽内的平台的步骤(步骤S10)；将液体注入至所述液槽内的步骤(步骤S14)；以及在所述液槽所积存的液体中，使接合头所保持的所述芯片组件重合于所述接合对象物而进行加压，由此，将所述芯片组件的电极部接合于所述接合对象物的被接合部(电极部)的步骤(步骤S22)。

Description

半导体装置的制造方法及制造装置
技术领域
本申请公开一种将芯片(chip)组件的各电极部直接接合于设在接合对象物的被接合部的半导体装置的制造方法及制造装置。
背景技术
近年来，电子机器需要小型化及轻量化，从而需要进一步提高半导体装置的安装密度。作为将构成半导体装置的芯片组件安装于基板等接合对象物的工法，已知有倒装芯片接合(flip chip bonding)。在倒装芯片接合中，在芯片组件形成被称为凸块(bump)的突起，并经由所述凸块来电性连接芯片组件的电极部与接合对象物的被接合部(例如电极部)。
目前，由于基板的进一步的高密度化，也需要此种凸块微细化。然而，凸块的微细化存在限度，因此，也已提出有在一部分消除凸块的无凸块工法。例如，专利文献1中公开有如下接合方法，其使定位于规定的相对位置的芯片组件与接合对象物相互重合而进行加压，由此，根据金属间结合(intermetallic bond)的法则，直接接合芯片组件及接合对象物各自的电极部。根据所述接合方法，无需在芯片组件形成凸块，能够高密度地配置电极部。
现有技术文献
专利文献
专利文献1：日本专利特开2005-260173号公报
发明内容
发明所要解决的问题
然而，在专利文献1的技术中，为了防止电极部的氧化，将接合头(bonding head)或载置基板的平台(stage)收容于腔室(chamber)内，且使所述腔室内成为真空环境或利用惰性气体来填充所述腔室。在以所述方式将接合头及平台收容于腔室内的情况下，装置整体大型且复杂。而且，需要在接合之前，先使腔室内成为真空或利用惰性气体来填充所述腔室，安装步骤变繁琐。进而，在进行直接接合的情况下，由于不存在将芯片组件与接合对象物(基板等)之间的平行度的不均予以吸收的凸块，故而即使粒子极微小，也会导致接合精度下降。因此，在进行直接接合的情况下，需要在接合之前，预先充分地将芯片组件的电极部及接合对象物的被接合部(电极部)的表面洗净，非常耗费工夫。
因此，在本申请中，公开一种能够利用更简单的顺序及构成来将芯片组件直接接合于接合对象物的半导体装置的制造方法及制造装置。
解决问题的技术手段
本申请所公开的半导体装置的制造方法是将芯片组件的电极部直接接合于设在接合对象物的被接合部的半导体装置的制造方法，所述半导体装置的制造方法包括：载置步骤，其将所述接合对象物载置于液槽内；液体注入步骤，其将液体注入至所述液槽内；以及在所述液槽所积存的液体中，使接合头所保持的所述芯片组件重合于所述接合对象物，由此，将所述电极部接合于所述被接合部的步骤。
根据所述方法，芯片组件与接合对象物配置于液体中，因此，异物会简单且有效果地被除去。作为结果，能够利用更简单的顺序来将芯片组件直接接合于接合对象物。
所述制造方法也可进而包括：位置检测步骤，其在所述载置步骤之后，所述液体注入步骤之前，检测所述接合对象物的位置；以及定位步骤，其基于所述位置检测步骤中的位置检测结果，使所述接合对象物与所述接合头相互定位。
若设为所述方法，则能够不受液体的影响而对位置进行检测，因此，能够更正确地进行定位，从而能够提高接合精度。
而且，所述液体为蚀刻液，所述蚀刻液对所述电极部的接合面或所述被接合部的接合面进行蚀刻(etching)，而在所述电极部的接合面或所述被接合部的接合面生成活性层，所述进行接合的步骤也可将任一个生成有所述活性层的所述接合面接合于另一个所述接合面。在所述情况下，所述电极部或所述被接合部也可包括成为接合面的金属薄膜，所述蚀刻液对所述金属薄膜进行蚀刻，在所述接合面生成活性层。
若设为所述方法，则即使不预先对电极部及被接合部进行活性化处理，也能够通过将所述电极部及被接合部配置于液体中来进行活性化，因此，能够更简单地实施表面活性化接合。
而且，所述电极部或所述被接合部也可包括成为接合面的金属薄膜，所述进行接合的步骤经由所述薄膜来接合所述电极部与所述被接合部。在所述情况下，所述液体也可选自包含超纯水、氟系惰性液体(inert fluid)、硅油(silicone oil)的群组、或包含这些液体的混合液的群组。
若设为所述方法，则能够更简单地实施原子扩散接合。
而且，所述电极部也可包含铜薄膜，在所述液体中添加有用以防止所述电极部氧化的离子调节剂。
通过设为所述构成，能够有效果地防止电极部及被接合部氧化，从而能够更优选地直接接合电极部。
本申请所公开的半导体装置的制造装置是将芯片组件的各电极部直接接合于设在接合对象物的被接合部的半导体装置的制造装置，所述半导体装置的制造装置包括：液槽，其积存液体，并且在内部载置所述接合对象物；以及接合头，其在所述液槽所积存的液体中，使所述芯片组件与所述接合对象物相互重合，由此，将所述芯片组件的所述电极部直接接合于所述接合对象物的所述被接合部。
若设为所述构成，则芯片组件与接合对象物配置于液体中，因此，异物会简单且有效果地被除去。作为结果，能够利用更简单的构成来将芯片组件直接接合于接合对象物。
所述制造装置也可进而包括：注入排出机构，其将液体注入至所述液槽及排出；位置检测机构，其在所述液槽中未注入有液体的状态下，对所述液槽所载置的所述接合对象物的位置进行检测；以及定位机构，其基于所述位置检测机构的位置检测结果，使所述液槽所保持的所述接合对象物与所述接合头相互定位，所述注入排出机构在通过所述位置检测机构进行位置检测之后，将液体注入至所述液槽。
若设为所述构成，则能够不受液体的影响而对位置进行检测，因此，能够更正确地进行定位，从而能够提高接合精度。
而且，所述制造装置也可进而包括除液机构，所述除液机构在从所述液槽的液体中提起所述接合头时，将附着于所述接合头的液体除去。
通过设为所述构成，当利用接合头来拾取(pick up)新的芯片组件时，能够防止液体附着于所述接合头。
而且，所述制造装置也可进而包括在所述液槽内的液体中传播超声波振动的超声波洗净机构。
通过设为所述构成，能够利用超声波振动，更有效果地将配置于液体内的接合对象物及芯片组件洗净。
发明的效果
根据本申请所公开的半导体装置的制造方法及制造装置，将芯片组件与接合对象物配置于液体中，因此，异物会简单且有效果地被除去。结果为能够利用更简单的顺序及构成来将芯片组件直接接合于接合对象物。
附图说明
图1是表示半导体装置的制造装置的构成的图。
图2是芯片组件及基板的概略立体图。
图3是被直接接合的芯片组件及基板的概略剖面图。
图4是表示半导体装置的制造流程的流程图。
[符号的说明]
10：制造装置
12：平台
12a：基板平行度调整机构
14：液槽
16：接合头
16a：芯片平行度调整机构
17：前端部
18：控制部
20：液体供给源
22：超声波洗净机构
24：位置检测机构
26：除液机构
32：注入配管
34：排出配管
36：注入泵
38：注入阀
40：排出阀
42：芯片用照相机
44：基板用照相机
50：液体
100：基板
102、112：电极部
104、114：定位标记
110：芯片组件
具体实施方式
以下，参照附图来对半导体装置的制造装置10进行说明。图1是表示半导体装置的制造装置10的构成的图。所述制造装置10是特别适合于将芯片组件110直接接合于接合对象物即基板100的装置。
此处，所谓直接接合，是指不经由凸块或粘接剂、线(wire)等中继构件，使形成于芯片组件110的电极部112与形成于接合对象物(基板100等)的电极部102(被接合部)直接接触而进行接合。作为代表性的直接接合，存在如原子扩散接合、表面活性化接合等。原子扩散接合及表面活性化接合均为如下接合方法，即，在接合构件(电极部102、112)的熔点以下的温度条件下，以不产生塑性变形的程度而重叠地接合所述接合构件。原子扩散接合为如下方法，即，在使金属薄膜彼此接触而接合时，利用接合面之间所产生的金属原子的扩散来进行接合。表面活性化接合为如下方法，即，对接合面进行表面处理，将所述接合面的表面的原子设为易于进行化学键结的活性状态之后，进行接合。在以下的说明中，例举利用原子扩散接合来进行接合的情况而进行说明。然而，本申请所公开的技术不限于原子扩散接合，能够适用于利用了表面活性化接合、或其他直接接合的接合技术。
在对制造装置10进行说明之前，先参照图2、图3对芯片组件110及接合对象物即基板100的构成进行说明。图2是芯片组件110及基板100的概略立体图，图3是表示已将芯片组件110接合于基板100的状态的概略剖面图。
芯片组件110是经由划线(scribe)步骤而从晶圆(wafer)切割出的芯片状的集成电路(Integrated Circuit，IC)。在芯片组件110的接合面，依照规定的图案(pattern)而高密度地形成有一个以上(在图示例中为12个)的电极部112。所述电极部112包含导电性金属，例如金或铜等。在附图中，为了便于观察，图示了较厚的电极部112，但实际上，所述电极部112的厚度为能够进行原子扩散接合的程度，十分地薄。具体而言，电极部112包括厚度为数nm～数百nm的金属薄膜。此种电极部112例如由溅镀(sputtering)等形成。在接合面，进而设置有一个以上(在图示例中为3个)的定位标记114。此处，如至此为止的说明可得知，所述芯片组件110为不具有凸块的无凸块芯片。
在基板100也形成有一个以上(在图示例中为12个)的电极部102。所述电极部102是作为与芯片组件110的电极部112接合的被接合部而发挥功能。基板100的电极部102也与芯片组件110的电极部112同样为包括导电性金属，例如金或铜等的金属薄膜，且由溅镀等形成。而且，在基板100也设置有一个以上(在图示例中为3个)的定位标记104。再者，在图2、图3中，电极部102从基板100的上表面突出，但电极部102也可以上表面露出至外部且与基板100的上表面相连的方式(以电极部102不突出的方式)，埋入至基板100内。
当将芯片组件110接合于基板100上时，以使芯片组件110的定位标记114与基板100的定位标记104正确地吻合的方式，相对于基板100而相对地对芯片组件110进行定位之后，使所述芯片组件110重合于基板100。接着，利用适度的负荷，将芯片组件110的电极部112推压至基板100的电极部102之后，因构成各电极部112、102的金属原子的扩散现象，两个电极部112、102被接合。
接下来，参照图1对制造装置10进行说明。制造装置10包括平台12、液槽14、接合头16、控制部18等。基板100载置于平台12。平台12设置有保持所述基板100的基板保持机构(未图示)，使得所载置的基板100不会移动。作为基板保持机构，例如能够使用从底面侧吸附保持基板100的吸附机构、或利用爪构件将基板100紧压至平台12上而加以固定的夹紧机构等。
而且，平台12内置有基板平行度调整机构12a，所述基板平行度调整机构12a对所述平台12所载置保持的基板100的平行度进行调整。基板平行度调整机构12a为如下机构，其对平台12上表面的倾斜进行调整，从而将所述平台12所载置的基板100调整为水平。所述基板平行度调整机构12a例如可为组合有凸状半球面构件与凹状半球面构件的球面轴承机构，也可为使平台12内的规定的3个点独立地升降的升降机构等。
再者，如后所述，在收容平台12的液槽14中，液体50被注入，使平台12的周围充满液体50。因此，优选的是，基板保持机构及基板平行度调整机构12a均为即使与液体50接触，也能够无问题地进行动作的结构、或者是使液体50无法与机构接触的防水结构。
此种平台12收容于液槽14且受到固定。液槽14是能够积存液体50的容器。液槽14只要具有能够将平台12及载置于所述平台12的基板100浸渍于液体中的程度的大小，则其形状、尺寸(size)并无特别限定。液槽14连接着用以将液体50注入至所述液槽14的注入配管32、与将液槽14所积存的液体50排出至外部的排出配管34。注入配管32连接液槽14与液体供给源20，在所述注入配管32的途中，设置有用以送出液体50的注入泵(pump)36与注入阀(valve)38。注入泵36及注入阀38均受到控制部18驱动控制，在打开注入阀38的状态下，驱动注入泵36，由此，将液体50注入至液槽14。注入配管32只要连接于液槽14，则其连接部位并无特别限定，但考虑到防止产生气泡，注入配管32优选为连接于液槽14的底面附近。
排出配管34连接液槽14与排水沟(drain)，在所述排出配管34的途中设置有排出阀40。通过控制部18来对排出阀40的驱动进行控制，打开排出阀40，由此来排出液体50。排出配管34优选为连接于液槽14的底面。再者，排出配管34可不仅是前进至排水沟的排液通路(route)，而且具有返回至注入配管32的回流通路，也能够将液体50的流出目的地切换为排液通路或回流通路。在设置回流通路的情况下，优选为设置从循环流动的液体50中除去异物的过滤器(filter)。通过设置回流通路，能够使供给至液槽14的液体50循环，从而能够使液体50产生适度的流动。由此，能够防止异物滞留于液槽14内，从而能够更优选地直接接合芯片组件110。
供给至液槽14的液体50只要不妨碍直接接合，尤其不妨碍原子扩散接合，则并无特别限定。此处，如下所述，在直接接合的情况下，极少的异物(粒子)也会成为问题，因此，液体50必须为以高水平(level)除去异物的液体。因此，例如能够使用电阻率为15MΩ·cm以上的超纯水作为液体50。在使用超纯水的情况下，能够使用超纯水制造装置作为液体供给源20。而且，也可使用化学性不活跃的液体例如氟系惰性液体、硅油等来代替超纯水。即，液体只要选自包含超纯水、氟系惰性液体、硅油的群组、或包含这些液体的混合液的群组即可。而且，也可在这些液体50中添加防止电极部102、112的表面氧化的离子调节剂。例如能够使用硫酸根离子等作为离子调节剂。
而且，在进行表面活性化接合而非原子扩散接合的情况下，液体50也可为在基板100的电极部102或芯片组件110的电极部112的接合面生成活性层的蚀刻液。也可在此种蚀刻液中添加防止氧化的离子调节剂。
在液槽14的上侧设置有接合头16。接合头16保持芯片组件110，并且将所述芯片组件110推压至基板100上而进行接合。在所述接合头16的前端部17设置有保持芯片组件110的芯片保持机构(未图示)。芯片保持机构可为从背面吸附保持芯片组件110的吸附机构，也可为利用一对臂部(arm)来夹持芯片组件110的夹持机构。此处，接合头16的前端部17也浸渍于液体50，因此，优选的是这些芯片保持机构也为即使与液体50接触，也能够无问题地进行动作的结构、或者是使液体50无法与机构接触的防水结构。
接合头16能够进行升降动作、水平移动及围绕铅垂轴R的自转。而且，在接合头16设置有芯片平行度调整机构16a，能够对所述接合头16的前端面相对于水平面的倾斜进行调整。芯片平行度调整机构16a为如下机构，其对接合头16的前端面的倾斜进行调整，将所述前端面所保持的芯片组件110调整为水平。能够使用组合有凸状半球面构件与凹状半球面构件的球面轴承机构等作为所述芯片平行度调整机构16a。
在液槽14及接合头16的附近，设置有对芯片组件110及基板100的位置进行检测的位置检测机构24。位置检测机构24只要能够检测芯片组件110及基板100的位置及姿势，则并无特别限定。位置检测机构24例如单独地或者组合地使用非接触地检测至物体为止的距离的非接触测距传感器(sensor)、或对物体进行拍摄而取得图像数据(data)的照相机(camera)等来构成。
在图1的图示例中，位置检测机构24包括：芯片用照相机42，其对接合头16所保持的芯片组件110进行拍摄；以及基板用照相机44，其对平台12所保持的基板100进行拍摄。芯片用照相机42、基板用照相机44拍摄所得的图像数据被发送至控制部18。控制部18基于所发送的图像数据，算出芯片组件110及基板100的位置及姿势。位置及姿势的算出能够使用各种众所周知的图像处理技术。例如，也可使用图案匹配(matching)技术，从芯片组件110及基板100的图像数据检测出定位标记104、114，基于所述定位标记104、114的失真或旋转量、尺寸等，对芯片组件110及基板100的位置及姿势进行检测。而且，作为其他方法，也可使用立体量测法、三角测量法等，对芯片组件110及基板100的位置及姿势进行检测。再者，芯片用照相机42及基板用照相机44均可为单一，也可为多个。
此处，如上重复所述，在收容平台12的液槽14中，液体50被注入。在注入有液体50的状态下，芯片用照相机42、基板用照相机44或测距传感器对位置及姿势的检测会变难。因此，位置检测机构24是在将液体50注入至液槽14之前的状态下，对基板100的位置及姿势进行检测。
在液槽14的上方，进而也设置有从接合头16的前端部除去液体50的除液机构26。即，如后所述，接合头16的前端部17在接合过程中，进入至液槽14所积存的液体50内。进入至液体50之后，液滴会附着于向上方被提起的接合头16的前端部17。除液机构26将附着于所述前端部17的液滴除去。除液机构26只要能够将附着于前端部17的液体50除去，则其构成并无限定。在图1的图示例中，除液机构26是对前端部17喷射气体而将液体50吹跑的鼓风机(blower)机构。制造装置10也进而具有超声波洗净机构22，所述超声波洗净机构22通过对液槽14内的液体50赋予超声波振动，从基板100或芯片组件110的电极部102、112除去异物。
控制部18对制造装置10整体的驱动进行控制，且包括进行各种运算的中央处理器(Central Processing Unit，CPU)、与存储各种参数(parameter)或程序(program)的存储部。再者，在图1中，将控制部18图示为单一的单元，但也可组合多个控制单元(多个CPU、多个存储部)而构成控制部18。在所述情况下，多个控制单元以有线或无线的方式连接。而且，多个控制单元的一部分也可配置于远离液槽14等的远端场所。
根据以上的说明可得知：本申请所公开的制造装置10是在液体50内，将芯片组件110直接接合于基板100。与现有技术相比较，说明以所述方式在液体中进行直接接合的理由。
在经由凸块进行接合的现有技术的情况下，芯片组件110及基板100的高度的稍许不均由凸块吸收。因此，即使在芯片组件110及基板100之间存在微小的异物，大多不会成为问题。然而，在直接接合的情况下，未在芯片组件110形成凸块，芯片组件110的电极部112、与基板100的电极部102直接接合。在所述情况下，即使附着于芯片组件110的电极部112及基板100的电极部102的异物极微小，也会大幅度地使接合精度变差。
在专利文献1等中，为了避免此种问题，在将芯片组件110及基板100的电极部112、102的表面洗净之后，将所述芯片组件110及基板100保持于真空环境中或惰性气体环境中，而进行直接接合。具体而言，是设置能够保持为真空环境或惰性气体环境的腔室(无尘室)，在所述腔室内配置接合头16或平台12。然而，在以所述方式将接合头16及平台12收容于腔室内的情况下，装置整体大型且复杂。而且，在接合之前，需要先使腔室内成为真空或利用惰性气体来填充所述腔室，安装步骤变繁琐。进而，在接合之前，需要预先充分地将芯片组件110及接合对象物的电极部的表面洗净，非常耗费工夫。
另一方面，在本申请所公开的制造装置10中，将基板100配置于液体50内，在所述液体50内，将芯片组件110接合于基板100。在所述情况下，无需将接合头16等的周围保持为真空环境或惰性气体环境，因此，无需收容这些的腔室。结果为能够使制造装置10小型化、简单化。
而且，于在高纯度的液体50内进行接合的情况下，基板100及芯片组件110由所述高纯度的液体50洗净，附着于基板100及芯片组件110的电极部102、112的异物被有效率地除去。结果为在接合之前，无需先将基板100及芯片组件110洗净，能够使步骤简单化。而且，通过在液体50中进行接合，能够容易地实现将氧等接合阻碍因素排除后的状态。换言之，无需为了制造脱氧环境而大量使用昂贵的惰性气体或形成真空环境，因此，能够容易且低成本地实现适合于接合的环境。进而，通过对液体50的成分进行调整，能够抑制电极部102、112的氧化，从而能够更优选地直接接合电极部102、112。
接下来，参照图4对所述制造装置10的半导体装置的制造流程进行说明。图4是表示半导体装置的制造流程的流程图。在为了制造半导体装置而将芯片组件110接合于基板100的情况下，首先，将基板100载置、设置于液槽14内的平台12(步骤S10)。此时，液槽14处于未注入有液体50的空的状态。可通过人的手来手动地设置基板100，也可通过各种装载(loading)机构来自动地设置基板100。
若基板100被载置了，则接着，控制部18驱动位置检测机构24，对所述基板100的位置及姿势进行检测(步骤S12)。具体而言，利用基板用照相机44来拍摄基板100。控制部18对所获得的图像数据进行图像分析，算出基板100的位置及姿势。再者，在基板100设置有多个定位标记104及多个电极部102。控制部18算出且暂时存储这些多个定位标记104及多个电极部102的位置及姿势。再者，此时，在判断为基板100非水平的情况下，驱动基板平行度调整机构12a，将基板100调整为水平。
若基板100的位置等检测完成，则控制部18将液体50注入至液槽14(步骤S14)。即，控制部18打开注入阀38，并且关闭排出阀40。而且，控制部18驱动注入泵36，将液体50从液体供给源20送出至液槽14。接着，若液体50达到规定水位，则控制部18停止注入液体50。另外，在液体50达到规定水位时，也可不停止注入，而是继续注入，并且打开排出阀40，在一定期间内，同时进行液体50的注入与排出。由此，在液槽14内产生恒定的流动，促进将附着于基板100的异物除去。而且，此时，也可驱动超声波洗净机构22，对基板100赋予超声波振动。
接着，驱动接合头16，从未图示的芯片供给源拾取芯片组件110(步骤S16)。若拾取芯片组件110完成，控制部18驱动位置检测机构24，对接合头16所保持的芯片组件110的位置及姿势进行检测(步骤S18)。具体而言，是对芯片用照相机42拍摄所得的图像数据进行图像分析，算出芯片组件110的位置及姿势。若芯片组件110的位置及姿势的算出完成，则控制部18以使芯片组件110相对于基板100的位置及姿势恰当的方式，对接合头16进行定位(步骤S20)。具体而言，控制部18在芯片组件110非水平的情况下，驱动芯片平行度调整机构16a，使芯片组件110变得水平。而且，以使芯片组件110的定位标记114位于基板100的对应的定位标记104的正上方的方式，对接合头16的水平位置及围绕铅垂轴R的旋转量进行调整。
若对相对于基板100的芯片组件110进行定位完成，则将芯片组件110接合于基板100(步骤S22)。具体而言，控制部18使接合头16下降，利用适度的负荷，将芯片组件110的电极部112推压至基板100的电极部102。由此，构成芯片组件110与基板100各自的电极部112、102的原子扩散，两个电极部112、102被接合。
另外，也可在对电极部112、102进行接合之前，在芯片组件110进入至液体50内的时点，使接合头16暂时停止下降，而使芯片组件110在液体50内暂时静止。在规定时间内，通过使芯片组件110在液体50内静止，附着于芯片组件110的异物也会有效果地被除去。而且，当使芯片组件110在液体50中静止时，也可同时进行液体50的注入与排出，或通过超声波洗净机构来对液体50赋予超声波振动。在任一种情况下，通过除去芯片组件110的异物，都能够更恰当地直接接合基板100及芯片组件110。
若将芯片组件110与基板100各自的电极部112、102接合完成，则控制部18解除利用接合头16的芯片组件110的保持，然后，使所述接合头16上升(步骤S24)。而且，若接合头16上升至规定的高度，则驱动除液机构26，将附着于接合头16的前端部17的液体50除去。具体而言，使鼓风机进行动作，将附着于前端部17的液滴吹跑。
若一个芯片组件110的接合已完成，则控制部18确认全部的芯片组件110的接合是否已完成(步骤S26)。在残留有待接合于基板100的芯片组件110的情况下，返回至步骤S16，重复同样的处理。若全部的芯片组件110的接合已完成，则接合处理结束。若接合处理结束，则从液槽14排出液体50，从平台12取出基板100。
根据以上的说明可得知：根据本申请所公开的半导体装置的制造装置10及制造方法，芯片组件110与基板100在进行直接接合时，配置于高纯度的液体50内。因此，能够有效率地将附着于芯片组件110及基板100各自的电极部112、102的异物除去，从而能够适当地进行直接接合。而且，通过将芯片组件110与基板100配置于高纯度的液体50内，能够容易地形成没有阻碍直接接合的氧等的环境，与设置腔室等的现有技术相比较，能够使制造装置10小型化、简单化。
另外，此处说明的构成为一例，当进行直接接合时，只要能够将芯片组件110及基板100配置于高纯度的液体50内，则也可适当地变更其他构成。例如，在所述例子中，使接合头16移动而进行芯片组件110相对于基板100的定位。然而，代替接合头16，或者除此以外，也可使液槽14或平台12移动而进行芯片组件110相对于基板100的定位。
而且，在所述例子中，说明了通过原子扩散接合来将芯片组件110及基板100各自的电极部112、102接合的情况，但也可通过其他直接接合法，例如表面活性化接合来进行接合。在所述情况下，在接合之前，也可先以使芯片组件110及基板100各自的电极部112、102活性化的方式进行表面处理。在所述情况下，液体50只要选择能够维持所述活性化状态的化学性不活跃的液体50即可。而且，作为其他形态，也可将液体50设为蚀刻液，所述蚀刻液对芯片组件110及基板100各自的电极部112、102的接合面进行蚀刻，在所述接合面生成活性层。在所述情况下，芯片组件及基板100无需预先经过活性化，只要在制造过程中浸渍于液体50即可。而且，在所述例子中，接合头16设为利用面来对芯片组件110进行按压加压的构成，但也可设为如下构成，即，利用辊(roller)构件等，从端部依序逐步对芯片组件110进行按压。而且，芯片组件110未必需要被加压，只要能够直接接合，则也可不加压，而仅使芯片组件110与基板100重合。
而且，在所述例子中，说明了将芯片组件110接合于基板100的例子，但接合芯片组件110的接合对象物也可并非为基板100。例如，也可将基板100的接合完成的芯片组件110作为接合对象物。换言之，本申请所公开的技术也可适用于将芯片组件110接合于芯片组件110上的情况。而且，在所述例子中，设置有除液机构26或超声波洗净机构22，但也可适当地省略这些机构。

Claims (11)

1.一种半导体装置的制造方法，将芯片组件的电极部直接接合于设在接合对象物的被接合部，所述半导体装置的制造方法的特征在于，包括：
载置步骤，其将所述接合对象物载置于液槽内；
液体注入步骤，其将液体注入至所述液槽内；
在所述液槽所积存的液体中，使接合头所保持的所述芯片组件重合于所述接合对象物，由此，将所述电极部接合于所述被接合部的接合步骤；以及
循环步骤，与所述接合步骤并行地进行，
在所述循环步骤中，所述液槽中储存的液体被排放到回流通路然后返回所述液槽，而使所述液体进行循环，
在所述回流通路上设置有从流过所述回流通路的液体中除去异物的过滤器。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
进而包括：
位置检测步骤，其在所述载置步骤之后，所述液体注入步骤之前，检测所述接合对象物的位置；以及
定位步骤，其基于所述位置检测步骤中的位置检测结果，使所述接合对象物与所述接合头相互定位。
3.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
所述液体为蚀刻液，所述蚀刻液对所述电极部的接合面或所述被接合部的接合面进行蚀刻，而在所述电极部的接合面或所述被接合部的接合面生成活性层，
所述接合步骤是将任一个生成有所述活性层的所述接合面接合于另一个所述接合面。
4.根据权利要求3所述的半导体装置的制造方法，其特征在于，
所述电极部或所述被接合部包括成为接合面的金属薄膜，
所述蚀刻液对所述金属薄膜进行蚀刻，在所述接合面生成活性层。
5.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
所述电极部或所述被接合部包括成为接合面的金属薄膜，
所述接合步骤是经由所述薄膜来接合所述电极部与所述被接合部。
6.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
所述液体选自包含超纯水、氟系惰性液体、硅油的群组、或包含这些液体的混合液的群组。
7.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
所述电极部包含铜薄膜，
在所述液体中添加有用以防止所述电极部氧化的离子调节剂。
8.一种半导体装置的制造装置，将芯片组件的各电极部直接接合于设在接合对象物的被接合部，所述半导体装置的制造装置的特征在于，包括：
液槽，其积存液体，并且在内部载置所述接合对象物；
接合头，其在所述液槽所积存的液体中，使所述芯片组件与所述接合对象物相互重合，由此，将所述芯片组件的所述电极部直接接合于所述接合对象物的所述被接合部；以及
回流通路，其中所述液槽中储存的液体被排放到所述回流通路然后返回所述液槽，而使所述液体进行循环，且在所述回流通路上设置有从流过所述回流通路的液体中除去异物的过滤器。
9.根据权利要求8所述的半导体装置的制造装置，其特征在于，
进而包括：
注入排出机构，其将液体注入至所述液槽及排出；
位置检测机构，其在所述液槽中未注入有液体的状态下，对所述液槽所载置的所述接合对象物的位置进行检测；以及
定位机构，其基于所述位置检测机构的位置检测结果，使所述液槽所保持的所述接合对象物与所述接合头相互定位，
所述注入排出机构在通过所述位置检测机构进行位置检测之后，将液体注入至所述液槽。
10.根据权利要求8或9所述的半导体装置的制造装置，其特征在于，
进而包括除液机构，所述除液机构在从所述液槽的液体中提起所述接合头时，将附着于所述接合头的液体除去。
11.根据权利要求8或9所述的半导体装置的制造装置，其特征在于，
进而包括在所述液槽内的液体中传播超声波振动的超声波洗净机构。
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