CN110212028A - 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 - Google Patents
一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 Download PDFInfo
- Publication number
- CN110212028A CN110212028A CN201910429419.1A CN201910429419A CN110212028A CN 110212028 A CN110212028 A CN 110212028A CN 201910429419 A CN201910429419 A CN 201910429419A CN 110212028 A CN110212028 A CN 110212028A
- Authority
- CN
- China
- Prior art keywords
- field plate
- schottky diode
- drain electrode
- mis
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000035755 proliferation Effects 0.000 title claims abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 30
- 238000005036 potential barrier Methods 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 41
- 230000005684 electric field Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910017109 AlON Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明公开了一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,包括GaN缓冲层、AlGaN势垒层、栅极电极、栅下绝缘层、源极电极、源极电极延伸段、源极场板、MIS肖特基二极管延伸段、MIS肖特基二极管绝缘层、p型GaN或凹槽、漏极电极、钝化层、AlN错层漏极内嵌场板,MIS肖特基二极管绝缘层制备于源极场板向MIS肖特基二极管延伸段以及AlGaN势垒层表面中间区域,二极管靠漏极侧采用p‑GaN或凹槽,提升器件击穿特性,漏极下方采用内嵌的错层场板,提升漏极向衬底抗击穿的能力,错层设计适应漏极电场自右向左的渐变型分布,提升器件的击穿特性,延长源极场板并包裹栅极,栅漏侧形成MIS肖特基二极管,二极管做成分块隔离的方式,极大地提升漏极电流。
Description
技术领域
本发明涉及半导体器件领域,特别是一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件。
背景技术
以GaN、AlGaN为代表的第三代半导体材料,自身有极强的自发极化,当形成GaN/AlGaN异质结时,由于晶格常数差异所带来的压电极化也非常强,再加上GaN和AlGaN两种材料的导带存在大的导带不连续性,使得在GaN/AlGaN异质结中可以形成天然的体密度高达1019量级的高浓度二维电子气(2DEG)。
由GaN/AlGaN异质结构成的高电子迁移率晶体管( GaN HEMT )的结构相比Si基MOSFET简单,无须掺杂,且层间材料禁带宽、介电常数高,使得其结电容很小,因而其工作频率可达百倍于Si基 MOSFET 。高频工作以及小结电容的特点还能使其在开关电源应用中的能耗进一步节省40%,功率密度提升3倍,系统成本降低20%。
eGaN HEMT器件是增强型GaN HEMT的简缩写,该型器件具有导通阻抗低、击穿电场高、耐温和耐辐照能力强等优点,成为能够替代Si基MOSFET的强劲对手。但是,由于该型器件存在非常高密度的材料缺陷,使得其在高电压下工作可靠性存在严峻挑战,比如电流崩塌、动态导通阻抗增加、Kink效应以及栅、漏延迟等,其击穿特性也往往难以达到理想的目标。另外,该型器件在不作特殊处理的情况下是不存在反向体二极管的,而其反向导通特性随电流和温度的增加急剧恶化。因此,研究如何提升该型器件的反向导通特性以及如何提升该型器件在高电场下的电气性能成为了当前的热点。
现阶段,常规的eGaN HEMT器件结构,主要存在以下2个重大缺点:无集成的反向二极管,器件在反向工作时,因为反向导通压降高而使其工作损耗大,另外,其反向导通特性随电流和温度的增加还存在急剧恶化的问题;栅极靠漏极侧无轻耗尽区,也无内嵌场板,器件在栅极侧存在很强的峰值电场,使得器件的栅漏容易被击穿,因而击穿特性较差。
发明内容
本发明的目的在于克服现有技术的缺点,提供一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件。为实现上述目的本发明通过以下技术方案实现:
一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,其特征在于,包括GaN缓冲层、AlGaN势垒层、栅极电极、栅下绝缘层、源极电极、源极电极延伸段、源极场板、源极场板向MIS肖特基二极管延伸段、 MIS肖特基二极管绝缘层、p型GaN或凹槽、漏极电极、钝化层、AlN错层漏极内嵌场板,MIS肖特基二极管绝缘层制备于源极场板向MIS肖特基二极管延伸段以及AlGaN势垒层表面中间区域。
优选的,所述错层漏极根据漏极电场分布分成3部分错层形状,第一部分从MIS肖特基二极管绝缘层区域下方延伸至、p型GaN区域下方附近,第二部分从p型GaN区域下方附近延伸至漏极电极区域下方左侧附近,第三部分位于漏极电极区域下方及部分左侧区域。
优选的,所述错层漏极位于漏极侧,采用内嵌式安装,且其材质为AlN,与GaN、AlGaN材质相匹配且相似,易于制备。
优选的,所述源极场板阵列包括多个平行且等长等宽的源场板,源场板在垂直于栅极电极的方向设置,每个源场板一端与源极电极连接,另一端跨过栅极电极并与MIS肖特基二极管绝缘层相连。
优选的,所述p型GaN区域可单独更换为凹槽,且不影响整体性能。
优选的,所述MIS肖特基二极管延伸段和 MIS肖特基二极管绝缘层采用的MIS肖特基二极管为集成化二极管。
与现有技术相比,本发明具有以下优点:二极管靠漏极侧采用p-GaN或凹槽,提升器件击穿特性,漏极下方采用内嵌的错层场板,提升漏极向衬底抗击穿的能力,错层设计适应漏极电场自右向左的渐变型分布,提升器件的击穿特性,延长源极场板并包裹栅极,栅漏侧形成MIS肖特基二极管,二极管做成分块隔离的方式,极大地提升漏极电流。
附图说明
图1为本发明集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件的结构示意图。
图2为本发明集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件的工作原理示意图。
图3为本发明成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件的俯视结构示意图。
图中:101、源极电极,102、源极电极延伸段,103、源极场板,104、MIS肖特基二极管延伸段,105、MIS肖特基二极管绝缘层,106-1、p型GaN,106-2、凹槽,107、栅极电极,108、栅下绝缘层,109、漏极电极,110、AlGaN势垒层,111、GaN缓冲层,112、钝化层,113、AlN错层漏极内嵌场板。
具体实施方式
下面结合附图和具体实施例对本发明作进一步详细阐述。
如图1、图2和图3所示,一种集成反向二极管和内嵌漏极场板的横向扩散eGaNHEMT器件,包括GaN缓冲层111、AlGaN势垒层110、栅极电极107、栅下绝缘层108、源极电极101、源极电极延伸段102、源极场板103、MIS肖特基二极管延伸段104、 MIS肖特基二极管绝缘层105、p型GaN106-1、凹槽106-2、漏极电极109、钝化层112、AlN错层漏极内嵌场板113;所述GaN缓冲层111生长在Si或蓝宝石或SiC衬底上;所述AlGaN势垒层110生长在GaN缓冲层111上;所述源极电极101和漏极电极制备在AlGaN势垒层110表面,其中源极电极101位于最左侧,漏极电极位于最右侧;所述源极电极延伸段102以及源极场板103向MIS肖特基二极管延伸段104均与源极电极101相连;所述MIS肖特基二极管绝缘层105制备于源极场板103向MIS肖特基二极管延伸段104以及AlGaN势垒层110表面中间区域;所述源极场板103向MIS肖特基二极管延伸段104、MIS肖特基二极管绝缘层105和AlGaN势垒层110共同构成MIS型肖特基二极管;所述栅下绝缘层108和栅极电极107位于源极电极101和MIS肖特基二极管之间,其中栅下绝缘层108以凹槽形式位于AlGaN势垒层110内部和AlGaN势垒层110上方,栅极电极107位于栅下绝缘层108上方;所述p型GaN106-1或凹槽106-2紧邻MIS肖特基二极管绝缘层105且位于MIS肖特基二极管绝缘层105的右侧和AlGaN势垒层110表面;所述钝化层112制备于器件的上方表面的空白处;所述的错层漏极109内嵌场板位于GaN缓冲层111内部且靠漏极电极侧。
所述错层漏极109根据漏极电场分布分成3部分错层形状,第一部分从MIS肖特基二极管绝缘层区域下方延伸至、p型GaN106-1区域下方附近,第二部分从p型GaN106-1区域下方附近延伸至漏极电极109区域下方左侧附近,第三部分位于漏极电极109区域下方及部分左侧区域。
所述错层漏极109位于漏极侧,采用内嵌式安装,且其材质为AlN,与GaN、AlGaN材质相匹配且相似,易于制备。
所述源极场板103阵列包括多个平行且等长等宽的源场板,源场板在垂直于栅极电极107的方向设置,每个源场板一端与源极电极101连接,另一端跨过栅极电极107并与MIS肖特基二极管绝缘层105相连。
所述p型GaN106-1区域可单独更换为凹槽106-2,且不影响整体性能。
所述MIS肖特基二极管延伸段(104)和 MIS肖特基二极管绝缘层105采用的MIS肖特基二极管为集成化二极管。
本发明工作原理:本发明通过延伸源极场板并在栅漏侧之间制备MIS型的源-漏反向肖特基二极管,这种集成式的反向二极管能够极大地改善其反向导通特性,降低反向导通电压随电流和温度的影响。该源场板和MIS肖特基二极管呈分块隔离阵列式分布,一方面这种漏极包裹栅极的结构使得栅下电场极大地被削弱并转移至MIS肖特基二极管绝缘层处,另一方面,由于分块隔离阵列式的分布,最大限度地提升了器件的漏极电流,实现功率型电力电子器件的作用。另外, MIS肖特基二极管绝缘层靠漏极侧采用p-GaN或凹槽,使该处下方的沟道呈现轻耗尽,实现类似LDMOS的局部轻耗尽功能,从而改善MIS肖特基二极管绝缘层处的峰值电场分布,提高器件的击穿电压。同时,在漏极下方采用内嵌的错层场板,改善栅极电极下方的峰值电场分布,提升漏极向衬底抗击穿的能力,通过错层设计适应漏极电场自右向左的渐变型分布,降低该场板对沟道中2DEG浓度产生的不利影响,并极大地隔离器件漏极对衬底的电场,进一步提高器件的击穿电压。
101-源极电极金属,尺寸根据需求设定;
102-源极电极金属,尺寸根据需求设定;
103-源极场板金属,尺寸根据需求设定,所述分块隔离式源极场板包括多个平行且等长等宽的 源场板阵列;
104-源极场板向肖特基二极管延伸金属,尺寸根据需求设定;
105-肖特基二极管绝缘介质层,亦可根据其所连接特性称作源绝缘层,厚度5-50nm;
101-105共同构成源极场板和肖特基二极管,其特点是,该部分完全将栅极区域包裹;
106-1-肖特基二极管靠漏极侧pGaN轻耗尽,厚度5-50nm;
106-2-肖特基二极管靠漏极侧凹槽轻耗尽,厚度5-15nm;
107-栅极电极金属,尺寸根据需求设定;
108-栅极结缘介质层,亦称作栅绝缘层,尺寸不限定,厚度≥110区域的AlGaN层厚度,参考结缘介质有:SiO2、Si3N4、Al2O3、MgO、AlN、AlON等;
109-漏极电极金属,尺寸根据需求设定;
110-AlxGa1-xN势垒层,其中,x为铝的组份,尺寸根据需求设定;
111-GaN缓冲层,尺寸根据需求设定;
112-钝化层,尺寸根据需求设定,参考钝化介质有:SiO2、Si3N4、Al2O3、MgO、AlN、AlON等。
本发明的创新点:二极管靠漏极侧采用p-GaN或凹槽,使该处下方的沟道呈现轻耗尽,实现类似LDMOS的局部轻耗尽功能,提升器件击穿特性。
漏极下方采用内嵌的错层场板,提升漏极向衬底抗击穿的能力,通过错层设计适应漏极电场自右向左的渐变型分布,同时,降低该场板对2DEG浓度产生的不利影响,该场板能够极大地隔离器件漏极对衬底的电场,提升器件的击穿特性。
延长源极场板并包裹栅极,使其在栅漏侧形成MIS肖特基二极管,且该二极管做成分块隔离的方式,极大地提升漏极电流。
以上所述为本发明较佳实施例,对于本领域的普通技术人员而言,根据本发明的教导,在不脱离本发明的原理与精神的情况下,对实施方式所进行的改变、修改、替换和变型仍落入本发明的保护范围之内。
Claims (6)
1.一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,其特征在于,包括GaN缓冲层(111)、AlGaN势垒层(110)、栅极电极(107)、栅下绝缘层(108)、源极电极(101)、源极电极延伸段(102)、源极场板(103)、MIS肖特基二极管延伸段(104)、 MIS肖特基二极管绝缘层(105)、p型GaN(106-1)、凹槽(106-2)、漏极电极(109)、钝化层(112)、AlN错层漏极内嵌场板(113);所述GaN缓冲层(111)生长在Si或蓝宝石或SiC衬底上;所述AlGaN势垒层(110)生长在GaN缓冲层(111)上;所述源极电极(101)和漏极电极制备在AlGaN势垒层(110)表面,其中源极电极(101)位于最左侧,漏极电极位于最右侧;所述源极电极延伸段(102)以及源极场板(103)向MIS肖特基二极管延伸段(104)均与源极电极(101)相连;所述MIS肖特基二极管绝缘层(105)制备于源极场板(103)向MIS肖特基二极管延伸段(104)以及AlGaN势垒层(110)表面中间区域;所述源极场板(103)向MIS肖特基二极管延伸段(104)、MIS肖特基二极管绝缘层(105)和AlGaN势垒层(110)共同构成MIS型肖特基二极管;所述栅下绝缘层(108)和栅极电极(107)位于源极电极(101)和MIS肖特基二极管之间,其中栅下绝缘层(108)以凹槽形式位于AlGaN势垒层(110)内部和AlGaN势垒层(110)上方,栅极电极(107)位于栅下绝缘层(108)上方;所述p型GaN(106-1)紧邻MIS肖特基二极管绝缘层(105)且位于MIS肖特基二极管绝缘层(105)的右侧和AlGaN势垒层(110)表面;所述钝化层(112)制备于器件的上方表面的空白处;所述的错层漏极(109)内嵌场板位于GaN缓冲层(111)内部且靠漏极电极侧。
2.根据权利要求1所述的一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,其特征在于,所述错层漏极(109)根据漏极电场分布分成3部分错层形状,第一部分从MIS肖特基二极管绝缘层(105)区域下方延伸至、p型GaN(106-1)区域下方附近,第二部分从p型GaN(106-1)区域下方附近延伸至漏极电极(109)区域下方左侧附近,第三部分位于漏极电极(109)区域下方及部分左侧区域。
3.根据权利要求1所述的一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,其特征在于,所述错层漏极(109)位于漏极侧,采用内嵌式安装,且其材质为AlN,与GaN、AlGaN材质相匹配且相似,易于制备。
4.根据权利要求1所述的一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,其特征在于,所述源极场板(103)阵列包括多个平行且等长等宽的源场板,源场板在垂直于栅极电极(107)的方向设置,每个源场板一端与源极电极(101)连接,另一端跨过栅极电极(107)并与MIS肖特基二极管绝缘层(105)相连。
5.根据权利要求1所述的一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,其特征在于,所述p型GaN(106-1)区域可单独更换为凹槽(106-2),且不影响整体性能。
6.根据权利要求1所述的一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件,其特征在于,所述MIS肖特基二极管延伸段(104)和 MIS肖特基二极管绝缘层(105)采用的MIS肖特基二极管为集成化二极管。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910429419.1A CN110212028B (zh) | 2019-05-22 | 2019-05-22 | 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910429419.1A CN110212028B (zh) | 2019-05-22 | 2019-05-22 | 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110212028A true CN110212028A (zh) | 2019-09-06 |
CN110212028B CN110212028B (zh) | 2023-03-31 |
Family
ID=67788112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910429419.1A Active CN110212028B (zh) | 2019-05-22 | 2019-05-22 | 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110212028B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111816707A (zh) * | 2020-08-28 | 2020-10-23 | 电子科技大学 | 消除体内曲率效应的等势降场器件及其制造方法 |
CN112164719A (zh) * | 2020-08-28 | 2021-01-01 | 电子科技大学 | 具有等势浮空槽的低阻器件及其制造方法 |
CN112466928A (zh) * | 2020-12-15 | 2021-03-09 | 南京工业职业技术大学 | 一种同时优化击穿特性和反向特性的GaN HEMT器件 |
CN112864015A (zh) * | 2021-01-27 | 2021-05-28 | 浙江集迈科微电子有限公司 | GaN器件及制备方法 |
WO2022127165A1 (zh) * | 2020-12-14 | 2022-06-23 | 南方科技大学 | P型栅hemt器件 |
CN114678415A (zh) * | 2022-03-28 | 2022-06-28 | 江苏晶曌半导体有限公司 | 一种具有阵列浮空岛结构的氮化镓肖特基二极管器件 |
CN117457494A (zh) * | 2023-05-29 | 2024-01-26 | 北京大学 | 一种提高增强型GaN HEMT短路能力的方法及其器件结构 |
Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335544A (ja) * | 1994-06-14 | 1995-12-22 | Nippon Steel Corp | 高周波回路素子の製造方法 |
US20040227211A1 (en) * | 2003-05-16 | 2004-11-18 | Wataru Saito | Power semiconductor device used for power control |
US20050017300A1 (en) * | 2003-07-11 | 2005-01-27 | Salama C. Andre T. | Super junction / resurf ldmost (sjr-LDMOST) |
US20050098846A1 (en) * | 2003-03-10 | 2005-05-12 | Tatsuji Nagaoka | MIS-type semiconductor device |
US20130087803A1 (en) * | 2011-10-06 | 2013-04-11 | Epowersoft, Inc. | Monolithically integrated hemt and schottky diode |
US20130153967A1 (en) * | 2011-12-20 | 2013-06-20 | Infineon Technologies Austria Ag | Compound Semiconductor Device with Buried Field Plate |
US20140264431A1 (en) * | 2013-03-13 | 2014-09-18 | Transphorm Inc. | Enhancement-mode iii-nitride devices |
WO2014202409A1 (de) * | 2013-06-18 | 2014-12-24 | Robert Bosch Gmbh | Transistor und verfahren zur herstellung eines transistors |
US9142626B1 (en) * | 2013-04-23 | 2015-09-22 | Hrl Laboratories, Llc | Stepped field plate wide bandgap field-effect transistor and method |
CN105118859A (zh) * | 2015-07-29 | 2015-12-02 | 电子科技大学 | 一种隧穿增强型hemt器件 |
US20160071967A1 (en) * | 2014-09-05 | 2016-03-10 | Infineon Technologies Austria Ag | High-Electron-Mobility Transistor Having a Buried Field Plate |
CN105448964A (zh) * | 2015-11-23 | 2016-03-30 | 西安电子科技大学 | 复合阶梯场板槽栅AlGaN/GaN HEMT高压器件结构及其制作方法 |
US20170077282A1 (en) * | 2015-09-15 | 2017-03-16 | Electronics And Telecommunications Research Institute | Electronical device |
CN107170797A (zh) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | 基于漏场板的电流孔径异质结晶体管及其制作方法 |
CN107393959A (zh) * | 2017-07-07 | 2017-11-24 | 西安电子科技大学 | 基于自对准栅的GaN超高频器件及制作方法 |
WO2017201947A1 (zh) * | 2016-05-25 | 2017-11-30 | 华讯方舟科技有限公司 | 具备场板和低掺杂漏区的晶体管 |
CN107623032A (zh) * | 2017-10-24 | 2018-01-23 | 电子科技大学 | 一种新型的GaN异质结场效应晶体管 |
CN107785423A (zh) * | 2016-08-30 | 2018-03-09 | 中芯国际集成电路制造(北京)有限公司 | 一种ldmos晶体管结构 |
WO2018063399A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Layered spacer formation for ultrashort channel lengths and staggered field plates |
CN108330536A (zh) * | 2018-03-20 | 2018-07-27 | 南京大学 | PA-MBE同质外延高质量GaN单晶薄膜的制备方法 |
-
2019
- 2019-05-22 CN CN201910429419.1A patent/CN110212028B/zh active Active
Patent Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335544A (ja) * | 1994-06-14 | 1995-12-22 | Nippon Steel Corp | 高周波回路素子の製造方法 |
US20050098846A1 (en) * | 2003-03-10 | 2005-05-12 | Tatsuji Nagaoka | MIS-type semiconductor device |
US20040227211A1 (en) * | 2003-05-16 | 2004-11-18 | Wataru Saito | Power semiconductor device used for power control |
US20050017300A1 (en) * | 2003-07-11 | 2005-01-27 | Salama C. Andre T. | Super junction / resurf ldmost (sjr-LDMOST) |
US20130087803A1 (en) * | 2011-10-06 | 2013-04-11 | Epowersoft, Inc. | Monolithically integrated hemt and schottky diode |
US20130153967A1 (en) * | 2011-12-20 | 2013-06-20 | Infineon Technologies Austria Ag | Compound Semiconductor Device with Buried Field Plate |
CN105247681A (zh) * | 2013-03-13 | 2016-01-13 | 创世舫电子有限公司 | 增强型iii-氮化物器件 |
US20140264431A1 (en) * | 2013-03-13 | 2014-09-18 | Transphorm Inc. | Enhancement-mode iii-nitride devices |
US9142626B1 (en) * | 2013-04-23 | 2015-09-22 | Hrl Laboratories, Llc | Stepped field plate wide bandgap field-effect transistor and method |
WO2014202409A1 (de) * | 2013-06-18 | 2014-12-24 | Robert Bosch Gmbh | Transistor und verfahren zur herstellung eines transistors |
US20160071967A1 (en) * | 2014-09-05 | 2016-03-10 | Infineon Technologies Austria Ag | High-Electron-Mobility Transistor Having a Buried Field Plate |
CN105405877A (zh) * | 2014-09-05 | 2016-03-16 | 英飞凌科技奥地利有限公司 | 具有埋置场板的高电子迁移率晶体管 |
CN105118859A (zh) * | 2015-07-29 | 2015-12-02 | 电子科技大学 | 一种隧穿增强型hemt器件 |
US20170077282A1 (en) * | 2015-09-15 | 2017-03-16 | Electronics And Telecommunications Research Institute | Electronical device |
CN105448964A (zh) * | 2015-11-23 | 2016-03-30 | 西安电子科技大学 | 复合阶梯场板槽栅AlGaN/GaN HEMT高压器件结构及其制作方法 |
WO2017201947A1 (zh) * | 2016-05-25 | 2017-11-30 | 华讯方舟科技有限公司 | 具备场板和低掺杂漏区的晶体管 |
CN107785423A (zh) * | 2016-08-30 | 2018-03-09 | 中芯国际集成电路制造(北京)有限公司 | 一种ldmos晶体管结构 |
WO2018063399A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Layered spacer formation for ultrashort channel lengths and staggered field plates |
CN107170797A (zh) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | 基于漏场板的电流孔径异质结晶体管及其制作方法 |
CN107393959A (zh) * | 2017-07-07 | 2017-11-24 | 西安电子科技大学 | 基于自对准栅的GaN超高频器件及制作方法 |
CN107623032A (zh) * | 2017-10-24 | 2018-01-23 | 电子科技大学 | 一种新型的GaN异质结场效应晶体管 |
CN108330536A (zh) * | 2018-03-20 | 2018-07-27 | 南京大学 | PA-MBE同质外延高质量GaN单晶薄膜的制备方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111816707A (zh) * | 2020-08-28 | 2020-10-23 | 电子科技大学 | 消除体内曲率效应的等势降场器件及其制造方法 |
CN112164719A (zh) * | 2020-08-28 | 2021-01-01 | 电子科技大学 | 具有等势浮空槽的低阻器件及其制造方法 |
CN111816707B (zh) * | 2020-08-28 | 2022-03-08 | 电子科技大学 | 消除体内曲率效应的等势降场器件及其制造方法 |
CN112164719B (zh) * | 2020-08-28 | 2022-03-08 | 电子科技大学 | 具有等势浮空槽的低阻器件及其制造方法 |
WO2022127165A1 (zh) * | 2020-12-14 | 2022-06-23 | 南方科技大学 | P型栅hemt器件 |
CN112466928A (zh) * | 2020-12-15 | 2021-03-09 | 南京工业职业技术大学 | 一种同时优化击穿特性和反向特性的GaN HEMT器件 |
CN112466928B (zh) * | 2020-12-15 | 2021-11-30 | 南京工业职业技术大学 | 一种同时优化击穿特性和反向特性的GaN HEMT器件及其制作工艺 |
CN112864015A (zh) * | 2021-01-27 | 2021-05-28 | 浙江集迈科微电子有限公司 | GaN器件及制备方法 |
CN112864015B (zh) * | 2021-01-27 | 2022-07-05 | 浙江集迈科微电子有限公司 | GaN器件及制备方法 |
CN114678415A (zh) * | 2022-03-28 | 2022-06-28 | 江苏晶曌半导体有限公司 | 一种具有阵列浮空岛结构的氮化镓肖特基二极管器件 |
CN114678415B (zh) * | 2022-03-28 | 2022-12-02 | 江苏晶曌半导体有限公司 | 一种具有阵列浮空岛结构的氮化镓肖特基二极管器件 |
CN117457494A (zh) * | 2023-05-29 | 2024-01-26 | 北京大学 | 一种提高增强型GaN HEMT短路能力的方法及其器件结构 |
Also Published As
Publication number | Publication date |
---|---|
CN110212028B (zh) | 2023-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110212028A (zh) | 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 | |
CN107093628B (zh) | 一种极化掺杂增强型hemt器件 | |
CN105097911B (zh) | 一种具有结型半导体层的hemt器件 | |
CN106920844B (zh) | 一种具有n型浮空埋层的resurf hemt器件 | |
CN105140270B (zh) | 一种增强型hemt器件 | |
KR101922122B1 (ko) | 노멀리 오프 고전자이동도 트랜지스터 | |
KR101946009B1 (ko) | 고전자이동도 트랜지스터 및 그 구동방법 | |
CN107482059B (zh) | 一种GaN异质结纵向逆导场效应管 | |
CN104201201B (zh) | 一种用于GaN基HEMT器件的自适应偏置场板 | |
CN103715235B (zh) | 具有背面场板结构的增强型mis‑hemt器件及其制备方法 | |
CN109004028B (zh) | 一种具有源极相连P埋层和漏场板的GaN场效应晶体管 | |
KR20140012507A (ko) | 고전자 이동도 트랜지스터 및 그 제조방법 | |
CN103227199B (zh) | 半导体电子器件 | |
CN104992971B (zh) | 具有复合低k电流阻挡层的垂直氮化镓基异质结场效应管 | |
CN111739934A (zh) | 一种具有结型场板的氮化镓高电子迁移率晶体管 | |
CN110828565B (zh) | 一种具有p型埋层的双沟道高耐压氮化镓场效应晶体管 | |
CN103745992A (zh) | 基于复合漏极的AlGaN/GaN MISHEMT高压器件及其制作方法 | |
CN107393954B (zh) | 一种GaN异质结纵向场效应管 | |
CN106298943B (zh) | 一种具有体电场调制的横向双扩散金属氧化物半导体场效应管 | |
KR20140020043A (ko) | 고전자이동도 트랜지스터 | |
CN106252404B (zh) | 一种具有高k介质槽的纵向增强型mis hemt器件 | |
CN113394284B (zh) | 具有复合层结构的高压mis-hemt器件 | |
CN114784088A (zh) | 一种结条氮化镓基高电子迁移率晶体管 | |
CN103762234A (zh) | 基于超结漏场板的AlGaN/GaN MISHEMT高压器件及其制作方法 | |
CN103794643A (zh) | 一种基于槽栅高压器件及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20221221 Address after: 250100 Shandong Jianzhu University, Fengming Road, Lingang Development Zone, Jinan, Shandong Applicant after: SHANDONG JIANZHU University Address before: 277100 Room 201, Unit 1, Building 13, Yard 14, Guangming East Road, Shizhong District, Zaozhuang City, Shandong Province Applicant before: Zhang Shiying |
|
GR01 | Patent grant | ||
GR01 | Patent grant |