CN110211948A - 背对背堆叠芯片 - Google Patents

背对背堆叠芯片 Download PDF

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Publication number
CN110211948A
CN110211948A CN201910372401.2A CN201910372401A CN110211948A CN 110211948 A CN110211948 A CN 110211948A CN 201910372401 A CN201910372401 A CN 201910372401A CN 110211948 A CN110211948 A CN 110211948A
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CN
China
Prior art keywords
chip
back side
power stage
controller
monolithic
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Pending
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CN201910372401.2A
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English (en)
Inventor
F·希伯特
S·R·里韦特
M·艾尔萨
P·奥克兰德
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Intersil Americas LLC
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Intersil Americas LLC
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Publication of CN110211948A publication Critical patent/CN110211948A/zh
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Abstract

本公开涉及背对背堆叠芯片。本文公开的实施方案提供一种电路，所述电路包括具有有源侧和背侧的第一芯片，其中所述第一芯片是以倒装晶片方式安装到载体。所述电路也包括堆叠在所述第一芯片的所述背侧上的第二芯片，其中所述第二芯片堆叠在所述第一芯片上，使得所述第二芯片的背侧面向所述第一芯片的所述背侧，并且所述第二芯片的有源侧背对所述第一芯片。

Description

背对背堆叠芯片
本申请是申请日为2012年6月6日、申请号为201210202024.6、名称为“背对背堆叠芯片”的中国专利申请的分案申请。
相关申请的交叉引用
本申请案要求2011年8月17日提交的美国临时申请案第61/524,382号的优先权的权利，所述临时申请案在此以引用的方式并入本文。
技术领域
本文的主题涉及半导体装置，具体来说，涉及半导体封装。
背景技术
工业中需要具有高功率密度、高效率和低成本的功率变换系统，诸如DC至DC转换器。惯用功率变换系统有若干不同的形式。一种此类功率变换系统包括第一IC中的高侧装置，其堆叠在第二IC中的低侧装置上，其中控制器与高侧装置和低侧装置相邻。这些功率变换系统使用铜夹来将高侧芯片与低侧芯片连接在一起。这些铜夹可增加功率变换系统的成本和大小。这些功率变换系统也可使用导线接合来将高侧装置耦合至输出引线，从而可能导致归结于较高串联电阻和/或电感的降低的性能。
另一种此类功率变换系统包括单片IC，所述单片IC包括高侧装置、低侧装置和控制器。这些功率变换系统可使用倒装晶片、晶片级封装(CSP)和引线框上倒装晶片(FCOL)来来构建。因为这些系统将所有组件放置在单片IC上，所以归结于整合式高电压横向功率装置的较小Rdson乘以面积(与可用多个芯片实现的装置相比)，所述系统通常限于较低电压应用。此外，由于控制器、高侧装置和低侧装置都位于同一IC上，所以与具有多个堆叠IC的系统相比，所述系统的横向尺寸可能较大。
发明内容
在一个实施例中，提供一种电路。所述电路包括具有有源侧和背侧的第一芯片，其中所述第一芯片以倒装晶片方式安装到载体。所述电路也包括堆叠在第一芯片的背侧上的第二芯片，其中所述第二芯片堆叠在所述第一芯片上，使得所述第二芯片的背侧面向所述第一芯片的背侧，且所述第二芯片的有源侧背对所述第一芯片。
附图说明
图1为具有堆叠在反向功率级上的控制器IC的集成电路(IC)功率变换系统的一个实施方案的横截面图。
图2为图1的功率变换系统的一个实施方案的俯视图。
图3为具有堆叠在反向功率级上的控制器IC的功率变换系统的另一个实施方案的横截面图，其中所述功率变换系统具有比图1中所示的实施方案少的控制器引线。
图4为图3的功率变换系统的一个实施方案的俯视图。
图5为具有堆叠在反向功率级上的控制器IC的功率变换系统的又一个实施方案的横截面图，其中所述功率级的背侧上包括金属层。
图6为图5的功率变换系统的一个实施方案的俯视图。
图7为具有堆叠在反向功率级上的控制器IC的功率变换系统的又一个实施方案的横截面图，其中所述功率级的背侧上包括金刚石。
图8为具有堆叠在反向功率级上的控制器IC的功率变换系统的另一个实施方案的横截面图，其中所述功率变换系统包括热插塞。
图9为具有堆叠在反向功率级上的控制器IC的功率变换系统的又一个实施方案的横截面图，其中所述功率变换系统在所述功率级的背侧上包括热插塞和金刚石。
图10为具有堆叠在反向功率级IC上的多个IC的功率变换系统的又一个实施方案的横截面图。
图11为具有堆叠在反向功率级IC上的控制器IC以和安装在控制器IC上的桥式电感器的功率变换系统的另一个实施方案的横截面图。
图12为包括堆叠在反向功率级上的多个控制器IC的印刷电路板的一个实施方案的俯视图。
图13为包括具有堆叠在反向功率级上的控制器IC的功率变换系统的系统的一个实施方案的方框图，所述系统对处理装置和存储装置提供调节的功率。
具体实施方式
图1为具有堆叠在功率级IC 104上的控制器IC 102的功率变换系统100的一个实施方案的横截面图。功率级IC 104可包括芯片(也就是，单片IC)，所述芯片包括具有横向结构的高侧装置和/或低侧装置。如本文所使用，横向结构指的是其中用于高侧装置和低侧装置的信号连接(例如，源极、汲极、闸极)位于衬底的第一侧(在本文中也称为“有源侧”和“工作表面”)上并且衬底的相对侧(在本文中也称为“背侧”)可用于连接至衬底(例如，直流接地)的结构。具有横向结构的芯片可包括具有横向结构的一个或多个元件(例如，晶体管、二极管等)。
在一个实施例中，高侧装置和低侧装置分别包括一个或多个高侧晶体管和低侧晶体管(例如，场效晶体管(FETs))，以(例如)实施步降(例如，同步降压)转换器。在其它实施例中，低侧装置可包括二极管(例如，非同步降压转换器中的肖特基(Schottky)二极管)。在其它实施例中，功率级可包括NMOSFET作为低侧装置，其中Schottky二极管与输出负载串联耦合。
功率级IC 104可由任何适合的材料构成并进行适合的掺杂。例如，功率级IC 104可具有由硅、锗、第III族-第V族或第III族-氮族化合物(例如，氮化镓、砷化镓)、绝缘体上硅(SOI)(例如，金刚石上硅、硅上金刚石上硅(silicon on diamond on silicon))和其它材料形成的衬底。所述衬底也可适当掺杂以形成(例如)P-衬底或P+上Pepi衬底(Pepi on P+substrate)。在SOI实施例中，功率级IC 104可为N型或P型背侧晶圆。功率级IC 104也可在背侧上具有金属层，如下文参照图5和图6的展示及描述。高侧装置和低侧装置可包括任何适合的结构，包括N通道金属氧化物半导体场效晶体管(MOSFET)、P通道金属氧化物半导体场效晶体管或N和P通道金属氧化物半导体场效晶体管的组合(例如，横向双扩散MOSFET)、高电子移动性晶体管(HEMT)或其它晶体管，并且只要控制器IC 102相容，高侧装置和低侧装置就可为增强模式或空乏模式。功率级IC 104可根据包括BiCMOS和BCD的任何适合的工艺来制造，并且可被剥除以减少层的数目或可使用专用的工艺。
作为横向结构装置，功率级IC 104可具有有源侧116及背侧118。如以上所提及，有源侧116可包括用于功率级IC 104的高侧装置及/或低侧装置的信号连接(例如，汲极、源极、闸极)。在一些实施例中，与功率级IC 104的衬底连接也可经由有源侧116而发生。如以下所说明，在一些实施例中，除了经由有源侧116进行连接之外或替代经由有源侧116进行连接，与衬底的连接可经由功率级IC 104的背侧118而发生。
功率级IC 104可经配置来以倒装晶片方式安装到适合的载体110。载体110可具有用于连接芯片(例如，功率级IC 104)的芯片连接侧和用于连接至(例如)印刷电路板(PCB)的外部连接侧。诸如晶片级封装焊料凸块、铜柱或其它机构的互连件可将功率级IC 104的有源侧116电耦合及/或热耦合至载体110以及将功率级IC 104实体安装在载体110上。
控制器IC 102可包括具有用于控制功率级的操作的组件的芯片(也即，单片IC)。在一个实施例中，控制器IC 102也可具有横向结构，所述结构包括有源侧120和与有源侧120反向的背侧122，有源侧120包括与所述组件的信号连接。在一个实施例中，与衬底的连接可经由控制器IC 102的背侧122而发生。在一些实施例中，除了经由背侧122进行连接之外或替代经由背侧122进行连接，与控制器IC 102的衬底的连接可经由有源侧120而发生。
控制器IC 102可由任何适合的材料构成并进行适合的掺杂，并且可与功率级IC104相容。例如，控制器IC 102可具有由硅、锗、第III族-第V族或第III族-氮族化合物(例如，氮化镓、砷化镓)、绝缘体上硅(SOI)(例如，金刚石上硅、硅上金刚石上硅)和其它材料形成的衬底。所述衬底也可经适当掺杂以形成(例如)P-衬底或P+上Pepi衬底。在SOI实施例中，功率级IC 104可为N型或P型背侧晶圆。控制器IC 102可根据包括BiCMOS、BCD和CMOS技术的任何适合工艺来制造。
如图1中所示，控制器IC 102可堆叠在功率级IC 104上并安装到功率级IC 104。控制器IC 102可安置来使得控制器IC 102的背侧122面向(例如，朝向)功率级IC 104的背侧118并安装在背侧118上。换句话说，控制器IC 102的背侧122可用适合的芯片粘接化合物108连接至功率级IC 104的背侧118。因此，功率级IC 104可相对于控制器IC 102反向。控制器IC 102可使用任何适合的芯片粘接化合物108安装到功率级IC 104，所述芯片粘接化合物108包括导电和非导电环氧树脂和焊料。以下更详细说明特定芯片粘接实施例。
控制器IC 102可用接合导线106电耦合至载体110。接合导线的一端可连接至控制器IC 102的有源侧120，并且接合导线的相对端可连接至载体110上的相应连接(例如，引线)。接合导线106可由金、铜、铝、其组合或其它适合的组合构成。在其它实施例中，控制器IC 102可用其它构件电耦合至载体110，所述构件包括但不限于铜夹和铝带。
在图1中所示的实施例中，反向功率级IC 104上堆叠的控制器IC 102处于封装中。作为封装的IC，用于堆叠的控制器IC 102和功率级IC 104的载体110可包括具有多个引线的引线框结构。功率级IC 104可使用焊料114连接至引线。在一个实施例中，所述多个引线可包括高侧闸极引线(例如，用于耦合至高侧晶体管的闸极)、引线中的电压Vin(例如，用于耦合至高侧晶体管的汲极)、第一输出端Vsw(例如，用于耦合至高侧晶体管的源极)、DC接地端(例如，用于耦合至衬底和/或耦合至低侧晶体管的源极)、第二输出端Vsw(例如，用于耦合至低侧晶体管的汲极)、低侧闸极引线(例如，用于耦合至低侧晶体管的闸极)和用于耦合至控制器IC 102的各种互连件的多个控制器IC引线。在一些实施例中，与功率级IC 104的衬底的连接可通过有源侧116上衬底的暴露部分连接至载体110上的引线而发生。在衬底将被DC接地的实施例中，所述引线可耦合至DC接地端。然而，所述衬底可耦合至包括DC电压、滤波器网络(例如，用于AC接地端)或AC电压的任何适合的连接。在其它实施例中，衬底可为浮置的(例如，未连接)。在一些实施例中，与衬底的连接可经由功率级IC 104的背侧118而发生。参照图5和图6提供关于经由背侧118的与衬底的背侧连接的更多细节。
在其它实施例中，载体110可包括PCB，使得功率级IC 104上堆叠的控制器IC 102直接安装在PCB上，如参照图12所详细描述。用于功率变换系统100的封装可由包括陶瓷、塑胶或环氧树脂的任何适合的模制化合物112构成。
图2为堆叠在功率级IC 104上的控制器IC 102的俯视图，功率级IC 104是安装在载体110的引线上。如图所示，载体110上的一些引线或其部分是从功率级IC 104的边缘503(例如，占据面积)向外横向安置。如图所示，多个接合导线106可将控制器IC 102的有源侧120上的多个衬垫502耦合至这些引线或其部分。在此实施例中，存在从所有四个侧面上的功率级IC 104的占据面积503向外横向安置的引线或其部分。
这些引线中的一些引线可用作用于控制器IC 102的输入/输出引线，以发送信号/从功率变换系统100外部的组件接收信号。此外，这些引线中的一个或多个引线可从功率级IC 104的边缘503部分向外安置，且部分地位于功率级IC 104下方(例如，与功率级IC 104的有源侧120相对)。这些一个或多个引线可用以通过将各别引线的在功率级IC 104下方的部分连接至功率级IC 104(例如，连接至闸极)并且将从功率级IC 104的边缘503向外的引线部分连接至控制器IC 102的接合导线来将控制器IC 102耦合至功率级IC 104。接合导线506为用以将控制器IC 102耦合至功率级IC 104的接合导线的实施例。
如图2中所示，控制器IC 102的占据面积508可比功率级IC 104的占据面积503小。这样可使得功率级IC 104的背侧118的多个部分得以暴露和接近。在图2中所示的一个、两个、三个或所有四个侧面上，功率级IC 104的占据面积503可比控制器IC 102的占据面积508大。在其它实施例中，在一个、两个、三个或所有四个侧面上，控制器IC 102的占据面积508可比功率级IC 104的占据面积503大。
图3为包括反向功率级IC 104上堆叠的控制器IC 102的功率变换系统600的另一个实施例，其中载体610包括用于控制器IC 102的较少输入/输出引线。如图所示，在功率级IC 104的一侧上，载体610上的引线的外缘与功率级IC 104的占据面积对准。此实施例可在需要较少输入/输出引线用于控制器IC 102时和/或在需要较小封装时使用。
图4为图3的控制器IC 102和功率级IC 104的俯视图。如图所示，载体110上引线中的一些或其部分是从功率级IC 104的边缘503(例如，占据面积)横向向外安置。然而，在此实施例中，在四个侧面中的三个侧面上存在从功率级IC 104的占据面积503横向向外安置的引线或其部分。因此，在功率级IC 104的一个侧面上，载体110上的引线并未延伸经过功率级IC 104的边缘503且与功率级IC 104对准。如图所示，多个接合导线106可将控制器IC102的有源侧120上的多个衬垫502耦合至这些引线或其部分。
与参照图2所描述类似，这些引线中的一些引线可用作用于控制器IC 102的输入/输出引线，以发送信号/从功率变换系统100外部的组件接收信号。此外，这些引线中的一个或多个引线可从功率级IC 104的边缘503部分地向外安置且部分地位于功率级IC 104下方(例如，与功率级IC 104的有源侧120相对)。这些一个或多个引线可用以通过将各别引线的在功率级IC 104下方的部分连接至功率级IC 104(例如，连接至闸极)并将从功率级IC 104的边缘503向外的引线部分连接至控制器IC 102的接合导线来将控制器IC 102耦合至功率级IC 104。接合导线506为用以将控制器IC 102耦合至功率级IC 104的接合导线的实施例。
在一些实施例中，如图2所示，控制器IC 102的占据面积508可比功率级IC 104的占据面积503小。这样可使得功率级IC 104的背侧118的多个部分得以暴露和接近。参照图5至图9提供关于功率级IC 104的背侧118的使用的更多细节。
图5为包括反向功率级IC 104上堆叠的控制器IC 102的功率变换系统800的又一个实施例，其中在功率级IC 104的背侧118上安置有金属层802(也称为“背部金属”)。金属层802可提供自功率级IC 104至控制器IC 102的减少的噪声耦合。此外，金属层802可经由导线接合804耦合至载体110上的引线。所述导线接合804可提供经由功率级IC 104的背侧118连接至功率级IC 104的衬底。在衬底将被DC接地的实施例中，引线可耦合至DC接地端。然而，在其它实施例中，引线可耦合至包括DC电压、滤波器网络或AC电压的任何适合的连接。在其它实施例中，衬底可为浮置的(例如，无导线接合804)。
芯片粘接化合物108可放置在金属层802与控制器IC 102之间。在此，可将导电环氧树脂或焊料用作芯片粘接物108，以将控制器IC 102的背侧122电耦合至功率级IC 104的背侧118和接合导线804。此外，在一些实施例中，控制器IC 102也可在其背侧122上具有金属层。因此，导电环氧树脂或焊料可将控制器IC 102的背侧122上的金属层电耦合至功率级IC 104的背侧118和导线接合804。因此，与控制器IC 102的衬底的连接也可经由其背侧122而发生。在衬底将被DC接地的实施例中，耦合至所述衬底的引线可耦合至DC接地端。然而，所述衬底可耦合至包括DC电压、滤波器网络或AC电压的任何适合的连接。在其它实施例中，衬底可为浮置的(例如，与功率级IC 104的背侧118电绝缘和/或未连接至导线接合804)。
功率级IC 104和/或控制器IC 102的背侧上的金属层可由包括以下材料的任何适合的材料构成：TiNiAg、TiNiAu、CrAu、TiAl、TI(AlCu)合金(例如，铝中0.5％铜)、TiCuAl(Ti、铜、铝的单独层，其中Ti为薄的(约100埃至3000埃)以获得粘着力和低接触电阻，Cu可为薄或厚的(约1000埃至3微米)以减小电阻，且Al用以避免铜的氧化且可为薄的(例如，200埃至1微米))。在其中功率级IC 104和/或控制器IC 102包括此金属层的实施例中，用于功率级IC 104和/或控制器IC 102的衬底可为具有P+的Pepi衬底(Pepi with P+substrate)或P-衬底。
图6为展示堆叠在功率级IC 104上的控制器IC 102的功率变换系统800的俯视图，功率级IC 104是安装在载体110的引线上。如图所示，接合导线804连接至功率级IC 104的背侧118(例如，金属层802)的暴露区域。所述接合导线804耦合于载体110上的引线(例如，接地引线)的另一端，所述引线是从功率级IC 104的占据面积503向外横向安置。
图7为包括反向功率级IC 104上堆叠的控制器IC 102的功率变换系统1000的另一个实施例，其中功率级IC 104在背侧118上包括金刚石1002。金刚石1002可用于功率级IC104的背侧118上，以改善跨越功率级IC 104的热流。换句话说，金刚石1002可提供热自功率级IC 104上的热点至可耗散热的位置的有效横向运动。所述热转移可包括热转移至功率级IC 104上的较冷位置和/或转移至可允许热耗散出封装的热插塞。参照图8提供关于热插塞的更多细节。
金刚石1002可以任何适合的形式形成。例如，功率级IC 104可具有金刚石衬底上的硅或硅衬底上的金刚石上的硅。在其它实施例中，功率级IC 104可由标准衬底(例如，硅)构成，并且可将其中具有金刚石的另一衬底接合至所述衬底的背侧。此外，金刚石1002在性质上可为微晶或纳米晶。在一些实施例中，金刚石1002可为P硅衬底上的掺杂的P型(例如，硼)，以促成功率级IC 104的衬底的接地。除了散布来自功率级IC 104的热以外，金刚石104也可辅助散布来自控制器IC 102的背侧122的热。因此，热梯度可使控制器IC 102与功率级IC 104两者平稳。此外，金刚石可改善控制器IC 102与功率级IC 104之间的热耦合，此可使得更易于保护功率变换系统1000免于过热。在一个实施例中，芯片粘接物108可为导热材料(例如，环氧树脂、焊料)，且可安置于功率级IC 104的背侧118上的金刚石1002与控制器IC102的背侧122之间。在其它实施例中，不同于金刚石1002的材料可用作用于功率级IC 104的背侧118的散热器。
图8为包括反向功率级IC 104上堆叠的控制器IC 102的功率变换系统1100的另一个实施例，其中热插塞1102连接至功率级IC 104的背侧118。热插塞1102可通过使热能够经由功率变换系统1102的顶部耗散来辅助耗散来自功率级IC 104的热。热插塞1102可连接至功率级IC 104的背侧118的暴露区域，且可延伸穿过将暴露于功率变换系统1100的顶部的外部部分上的封装。在其它实施例中，可使用可(例如)连接至功率级IC 104的侧面的其它类型的热插塞。
图9为包括反向功率级IC 104上堆叠的控制器IC 102的功率变换系统1200的另一个实施例，其在功率级IC 104的背侧118上具有热插塞1102和金刚石1002两者。在此，热插塞1102可具有与参照图8所描述的相同的功能，并且金刚石1002可用以通过提供跨越功率级IC 104和控制器IC 102至热插塞1102的更有效的热转移来进一步增加热插塞1102的热耗散。
图10为包括堆叠在反向功率级IC 104上的多个IC 102、1302的功率变换系统1300的又一个实施例。在此实施例中，多个IC 102、1302包括控制器IC 102和驱动器IC 1302。类似于如上所述的控制器IC 102，驱动器IC 1302可包括芯片(也就是，单片IC)，所述芯片具有用于驱动功率级IC 104中的高侧装置和/或低侧装置的组件。在一个实施例中，驱动器IC1302可具有横向结构，所述结构包括有源侧(包括与组件的信号连接)和背侧，在一些实施例中，所述背侧可用作至衬底的连接(例如，DC接地端)。在其它实施例中，可将两个以上单片IC(也就是，芯片)堆叠在功率级IC 104上。
可如参照图1所描述而堆叠多个IC 102、1302。例如，可使用任何适合的芯片粘接化合物108将多个IC 102、1302安装到功率级IC 104，所述芯片粘接化合物108包括导电和非导电性环氧树脂和焊料。在一些实施例中，可安置堆叠在功率级IC 104上的IC 102、1302中的一个或多个，使得一个或多个IC 102、1302的背侧安装在功率级IC 104的背侧118上。也即，可用适合的芯片粘接化合物108将IC 102、1302中的一个或多个的背侧连接至功率级IC的背侧118。
可用接合导线106将多个IC 102、1302电耦合至载体110。接合导线的一端可连接至多个IC 102、1302的有源侧，且所述接合导线的相对端可连接至载体110上的引线。多个IC 102、1302也可经由一个或多个芯片电耦合至芯片接合导线1304。
在一些实施例中，功率变换系统1300可具有如参照图5所论述的耦合至载体110的功率级IC 104的背侧118。此外，在一些实施例中，功率变换系统1300可在功率级IC 104的背侧118上包括金刚石。最后，功率变换系统1300的一些实施例可在功率级IC 104的背侧118上包括热插塞。
图11为具有堆叠在反向功率级IC 104上的控制器IC 102以和安装在控制器IC102上的桥式电感器1402的功率变换系统1400的另一个实施例的横截面图。功率级IC 104可以倒装晶片方式安装到载体1401上，且控制器IC 102可如参照图1所述而堆叠并安装在功率级IC 104上。所堆叠的控制器IC 102和功率级104可安置在电感器1402下方，电感器1402以铜支撑件1404电耦合并连接至载体1401。电感器1402、功率级IC 104和控制器IC102可由适合的模制化合物1406围绕。
图12为包括反向功率级IC上多个堆叠的控制器IC的印刷电路板(PCB)1500的一个实施方案的俯视图。如图所示，堆叠在功率级IC 104上的控制器IC 102也可安装在PCB1500上。在此，功率级IC 104可安装在PCB 1500上，且控制器IC 102可如参照图1所述而堆叠并安装在功率级IC 104上。在一个实施例中，可使用HLA构造。如图所示，在PCB 1500上可包括多个堆叠的控制器IC和功率级IC组合1502。在PCB 1500上使用此组合可使得从(例如)第一功率级IC 104上的控制器IC 102到不同(第二)功率级IC 104能够进行芯片至芯片的导线接合。堆叠控制器IC 102也可使得能够减少用于耦合至控制器IC 102的导线接合长度。此外，PCB 1500可包括蚀刻的电感器以和包括离散组件的其它组件。
功率级IC 104上堆叠的控制器IC 102可用于许多电路配置中，所述配置包括DC至DC功率变换器、充电器、热调换控制器、AC至DC转换器、桥式驱动器、降压转换器、升压转换器、降压升压转换器、同步降压转换器或其它适合的电路。
在一些实施例中，堆叠在功率级IC 104上的控制器IC 102可提供高功率密度用于功率变换系统。功率密度可对应于相对于功率变换系统的占据面积的功率变换系统的电流和电压额定值，其中相对于占据面积的较高电流和电压额定值对应于较高功率密度。此外，一些实施例中，功率级104上堆叠的控制器IC 102可在功率变换系统中提供高效率，其中效率与功率变换系统的功率级的串联电阻(Rdson)有关，且较低串联电阻对应于较高效率。此外，在一些实施例中，功率级104上堆叠的控制器IC 102可提供低成本功率变换系统，其中成本是基于系统的RdsON乘以面积，并且其中较低Rdson乘以面积对应于较低成本制造技术(例如，较少的遮蔽层数目)和封装装配技术(例如，较少的步骤的数目和材料账单)。
尽管在本文中作为单独图进行描述，但可将不同图的适合组件一起整合于单个功率变换系统中。例如，功率变换系统可包括堆叠在功率级IC上的控制器IC，其中在背侧上具有热插塞(如图8中所示)并且具有与其背侧的接地或其它连接(如图5中所示)。也可进行其它组合。
具有堆叠在反向功率级IC 104上的控制器IC 102的诸如系统100、600、800、1000、1100、1200和1300的功率变换系统可制造为封装的IC，如对应的图中所示。以下提供用于将功率变换系统制造为封装的IC的示例性步骤。
将功率变换系统制造为封装的IC可包括同时制造多个封装的IC。因此，可将多个引线框提供为彼此相邻，每个引线框上装配有功率变换系统。一旦经过装配，则可将引线框和相关的组件进行单一化以形成个别封装的IC。以下描述涉及形成单个封装的IC的工艺，但应理解，所述工艺可涉及同时形成多个经封装IC。
获得的功率级IC 104、控制器IC 102和引线框全部用于制造封装的IC。可使用半导体工艺来将功率级IC 104制造为具有横向结构的芯片(例如，单片IC)。类似地，可使用半导体工艺将控制器IC 102制造为具有横向结构的芯片(例如，单片IC)。在功率级IC 104包括诸如金属层802(如图5中所示)或金刚石层1002(如图9中所示)的背侧层的实施例中，可在制造期间添加背侧层。例如，可在单一化多个功率级IC 104的晶圆之前在所述晶圆的背侧上沉积金属层802。对于金刚石层1002而言，可在单一化多个功率级IC 104的晶圆之前，将具有金刚石层的衬底安装到所述晶圆的背侧。金刚石层1002也可通过在单一化多个功率级IC 104的晶圆之前沉积于所述晶圆的背侧上来形成。
可将功率级IC 104安装到引线框，使得有源侧116粘接并电耦合至引线框上的衬垫。在一个实施例中，可使用焊料遮罩和焊漆来用焊料114涂布引线框。在另一个实施例中，可在单一化多个功率级IC 104的晶圆(例如，使用晶片级封装(CSP)技术)之前，将多个焊料球放置在所述晶圆的有源侧116上。在任何状况下，可将功率级IC 104与引线框对准并放置在引线框上。在一些实施例中，一旦功率级IC 104位于引线框上的适当位置，即可对焊料114进行回焊。
可将控制器IC 102安装到功率级IC 104的背侧118，使得控制器IC 102的背侧122面向并粘接至功率级IC 104的背侧118。为达到这种结果，功率级IC 104的背侧118、控制器IC 102的背侧122或两者可涂布有诸如焊料或环氧树脂的适当芯片粘接化合物108。在一个实施例中，可在单一化多个控制器IC 102的晶圆之前，将芯片粘接化合物108涂布在所述晶圆的背侧122上。除了控制器IC 102的背侧122之外或替代控制器IC 102的背侧122，可在单一化多个功率级IC 104的晶圆之前，将芯片粘接化合物108涂布在所述晶圆的背侧118上。在其它实施例中，可在单一化之后将芯片粘接化合物108放置在控制器IC 102的背侧122和/或功率级IC 104的背侧118上。在背侧上具有芯片粘接化合物108的情况下，可将控制器IC 102放置在功率级IC 104的背侧118上。可通过对焊料进行回焊或使环氧树脂固化来将控制器IC 102固定至功率级IC 104的背侧118。
在包括热插塞1102(例如，如图8和图9中所示)的实施例中，可将热插塞1102定位于与控制器IC 102相邻的功率级IC 104的背侧118上，并且使用适当粘合剂将热插塞1102粘附至背侧118。在除了安装在功率级IC 104上的控制器IC 102之外也包括一个或多个芯片的实施例中，可使用适合的芯片粘接化合物108将其它一个或多个芯片安装到功率级IC104的背侧118。例如，可使用半导体工艺将驱动器IC 1302制造为具有横向结构的芯片(例如，单片IC)。可将驱动器IC 1302安装到功率级IC 104，使得驱动器IC 1302的背侧粘接至功率级IC 104的背侧118。可用与参照控制器IC 102所描述类似的方式来安装驱动器IC1302。
在一个实施例中，用以将任何芯片(例如，控制器IC 102、驱动器IC 1302)粘接至功率级IC 104的焊料可具有与用以将功率级IC 104连接至引线框的焊料114不同的熔化温度。在其它实施例中，焊料可具有类似的熔化温度。
一旦经过安装，即可将控制器IC 102电耦合至引线框。在一个实施例中，可通过导线接合将控制器IC 102从有源侧120电耦合至引线框上的适当衬垫。在其它实施例中，可将铜夹或铝带耦合至有源侧120和引线框。在功率级IC 104的背侧118电耦合至引线框(例如，接地引线)的实施例中，导线接合可包括将一个或多个导线接合耦合至功率级IC 104的背侧118和耦合至引线框上的适当衬垫。可一次性或一次以上地进行用于控制器IC 102和功率级IC 104的导线接合。在包括安装到功率级IC 104的背侧118的一个或多个其它芯片的实施例中(例如，如图10中所示)，所述一个或多个其它芯片的有源侧可电耦合(例如，使用导线接合、铜夹或铝带)至控制器IC 102的有源侧120和/或耦合至引线框上的一个或多个适当衬垫。
一旦已将控制器IC 102和功率级IC 104电耦合至引线框，即可将模制化合物112涂覆在控制器IC 102、功率级IC 104和引线框上。在同时形成多个封装的IC的工艺中，可将模制化合物112涂覆于多个经过装配的功率变换系统结构上。一旦已涂覆模制化合物112，即可固化模制化合物112。在一些实施例中，可将固化的模制化合物112的顶部接地，(例如)以暴露在封装外部的热插塞1102。在同时形成多个封装的IC时，可单一化涂覆和固化模制化合物112之后的结构，以形成具有堆叠在反向功率级IC 104上的控制器IC 102的多个个别封装的IC。
具有堆叠在反向功率级IC 104上的控制器IC 102的诸如系统100、600、800、1000、1100、1200、1300、1400和图12所示的系统的功率变换系统可对各种负载提供经调节的功率。功率变换系统可接收未调节的功率(例如，线路功率)、调节所述未调节的功率，且向负载提供调节的功率。应理解，功率变换系统可结合其它组件和装置来操作，以提供调节的功率。
图13为包括这种功率变换系统的示例性系统1600的方框图。系统1600包括耦合至一个或多个处理装置1604和一个或多个存储装置1606的一个或多个功率变换系统1602。所述一个或多个功率变换系统1602可接收未经调节的功率(例如，线路功率)、调节所述功率，且向一个或多个处理装置1604和一个或多个存储装置1606提供调节的功率。在一个实施例中，所述一个或多个处理装置1604可包括中央处理单元(CPU)、微控制器、微处理器(例如，数字信号处理器(DSP))、现场可编程门阵列(FPGA)、特殊应用集成电路(ASIC)或其它处理装置。所述一个或多个存储装置1606可包括惯用硬盘、易失性或非易失性媒介(诸如，固态硬盘)、随机存取存储器(RAM)(包括但不限于同步动态随机存取存储器(SDRAM)、双倍数据速率(DDR)RAM、RAMBUS动态RAM(RDRAM)、静态RAM(SRAM)等)、电可擦除可编程只读存储器(EEPROM)和闪存等。所述一个或多个处理装置1604可以通讯方式耦合至所述一个或多个存储装置1606。
在其它实施例中，替代一个或多个处理装置和一个或多个存储装置或除了一个或多个处理装置和一个或多个存储装置之外，此功率变换系统可向其它功能电路提供调节的功率。例如，此功率变换系统可向内部装置组件、周边装置和其它组件提供功率。可在使用调节的功率的任何适合的电子装置中包括这种功率变换系统，所述电子装置诸如台式计算机、便携式计算机或平板计算机、机顶盒、电池充电器或其它装置。
已描述了由以上权利要求书界定的本发明的若干实施例。然而，将理解，在不脱离所要求的本发明的精神和范畴的情况下，可对所描述实施例进行各种修改。本文描述的特定实施例的特征和方面可与其它实施例的特征和方面进行组合或取代其它实施例的特征和方面。因此，其它实施例落入以上权利要求书的范畴内。
附图中重要组件的参考数字列表
100 功率变换系统
102 控制器IC
104 功率级IC
106 接合导线
108 芯片粘接化合物
110 载体
114 焊料
116 有源侧
118 背侧
120 有源侧
122 背侧
502 衬垫
503 占据面积
506 接合导线
508 占据面积
610 载体
800 变换系统
802 金属层
804 导线接合
1000 功率变换系统
1002 金刚石
1100 功率变换系统
1102 热插塞
1102 功率变换系统
1200 功率变换系统
1300 功率变换系统
1302 驱动器IC
1304 接合导线
1400 功率变换系统
1401 载体
1402 桥式电感器
1404 铜支撑件
1500 印刷电路板(PCB)
1502 组合
1600 示例性系统
1602 功率变换系统
1604 处理装置
1606 存储装置

Claims (34)

1.一种电路，其包括：
第一芯片，其具有有源侧和背侧，其中所述第一芯片以倒装晶片方式安装到载体；及
第二芯片，其堆叠在所述第一芯片的所述背侧上，其中所述第二芯片堆叠在所述第一芯片上，使得所述第二芯片的背侧面向所述第一芯片的所述背侧，并且所述第二芯片的有源侧背对所述第一芯片。
2.根据权利要求1所述的电路，其中所述第一芯片的所述背侧上包括金属层。
3.根据权利要求2所述的电路，其包括将所述第一芯片的所述金属层耦合至所述载体的一个或多个接合导线。
4.根据权利要求3所述的电路，其中所述金属层耦合至DC接地端、DC偏电压或滤波器网络中的一个。
5.根据权利要求1所述的电路，其中所述第二芯片的所述背侧电耦合至所述第一芯片的所述背侧。
6.根据权利要求5所述的电路，其中所述第二芯片是使用导电环氧树脂或焊料中的一个而安装到所述第一芯片。
7.根据权利要求1所述的电路，其中所述第一芯片具有横向结构，并且包括高侧装置和低侧装置；且
其中所述第二芯片具有横向结构，且包括用于所述高侧装置和所述低侧装置的控制器。
8.根据权利要求1所述的电路，其包括：
晶片封装，其围绕所述第一芯片和所述第二芯片，其中所述载体包括多个引线，其中所述第一芯片经过安装使得所述有源侧耦合至所述多个引线中的一个或多个。
9.根据权利要求8所述的电路，其包括将所述第二芯片的所述有源侧耦合至所述多个引线的子集的接合导线，其中所述多个引线的所述子集安置成至少部分地从所述第一芯片的占据面积向外。
10.根据权利要求9所述的电路，其中所述多个引线的子集安置成与所述第一芯片的所述有源侧部分地相对并且从所述第一芯片的占据面积部分地向外，其中所述子集耦合至所述第一芯片的所述有源侧并且耦合至所述多个接合导线中的一个或多个。
11.根据权利要求8所述的电路，其包括热插塞，所述热插塞热耦合至所述第一芯片的所述背侧并且暴露于所述晶片封装的外表面处。
12.根据权利要求1所述的电路，其中所述第一芯片在所述背侧上包括金刚石。
13.根据权利要求1所述的电路，其中所述第二芯片是使用非导电性环氧树脂而安装到所述第一芯片。
14.根据权利要求1所述的电路，其中所述第一芯片包括选自包括以下各者的组的衬底：硅、绝缘体上硅、金刚石上硅、硅上金刚石上硅、氮化镓、砷化镓。
15.根据权利要求1所述的电路，其中所述第一芯片包括P-衬底、P-上Pepi衬底、P+上Pepi衬底中的一个。
16.根据权利要求1所述的电路，其中所述第一芯片在所述有源侧上包括焊料凸块、铜柱或可焊接衬垫中的一个。
17.根据权利要求1所述的电路，其中所述电路包括功率变换系统，所述功率变换系统包括DC至DC功率变换器、充电器、热调换控制器、AC至DC转换器、桥式驱动器、降压转换器、升压转换器、降压升压转换器和同步降压转换器中的一个。
18.根据权利要求1所述的电路，其包括：
第三芯片，其堆叠在所述第一芯片的所述背侧上，其中所述第三芯片堆叠在所述第一芯片上，使得所述第三芯片的背侧面向所述第一芯片的所述背侧并且所述第三芯片的有源侧背对所述第一芯片。
19.根据权利要求18所述的电路，其中所述第一芯片包括高侧装置和低侧装置，其中所述高侧装置和所述低侧装置具有横向结构；
其中所述第二芯片包括用于所述高侧装置和所述低侧装置的控制器；且
其中所述第三芯片包括用于所述高侧装置和所述低侧装置的驱动器。
20.一种集成电路(IC)，其包括：
引线框结构；
第一芯片，其具有有源侧和背侧，所述第一芯片安装到所述引线框结构，使得所述有源侧面向所述引线框结构并且耦合至所述引线框结构；
第二芯片，其具有有源侧和背侧，所述第二芯片堆叠在所述第一芯片上，使得所述第二芯片的所述背侧面向所述第一芯片的所述背侧；及
多个接合导线，其耦合至所述第二芯片的所述有源侧且耦合至所述引线框结构。
21.根据权利要求20所述的IC，其中所述第一芯片在所述背侧上包括金属层，所述封装的IC包括将所述第一芯片的所述金属层耦合至所述引线框结构的一个或多个接合导线。
22.根据权利要求20所述的IC，其包括：
导电环氧树脂或焊料中的一个，其将所述第二芯片的所述背侧实体连接并且电耦合至所述第一芯片的所述背侧。
23.根据权利要求20所述的IC，其中所述第一芯片包括具有高侧装置和低侧装置的功率级；且
其中所述第二芯片包括用于所述高侧装置和所述低侧装置的控制器。
24.根据权利要求23所述的IC，其包括：
第三芯片，其堆叠在所述第一芯片的所述背侧上，其中所述第三芯片堆叠在所述第一芯片上，使得所述第三芯片的背侧面向所述第一芯片的所述背侧并且所述第三芯片的有源侧背对所述第一芯片，其中所述第三芯片包括用于所述高侧装置和所述低侧装置的驱动器。
25.根据权利要求20所述的IC，其包括：
模制化合物，其围绕所述第一芯片和所述第二芯片；及
热插塞，其热耦合至所述第一芯片的所述背侧且暴露于所述模制化合物的外表面处。
26.根据权利要求20所述的IC，其中所述第一芯片的所述背侧上包括金刚石。
27.根据权利要求20所述的IC，其中所述第一芯片包括将所述有源侧耦合至所述引线框结构的焊料凸块、铜柱或可焊接衬垫中的一个。
28.一种功率变换系统，其包括：
功率级单片集成电路(IC)，其具有横向结构，所述功率级单片IC包括有源侧和背侧，所述功率级单片IC的所述有源侧安装到载体；
控制器单片IC，其具有横向结构，所述控制器单片IC包括有源侧和背侧，所述控制器单片IC堆叠在所述功率级单片IC上，所述控制器单片IC的所述背侧安装到所述功率级单片IC的所述背侧，其中所述控制器单片IC经配置以控制所述功率级IC；及
多个接合导线，其耦合至所述控制器单片IC的所述有源侧和所述载体。
29.根据权利要求28所述的功率变换系统，其中所述功率级单片IC包括经配置以实施同步降压转换器的高侧场效晶体管(FET)和低侧FET。
30.根据权利要求28所述的功率变换系统，其中所述功率级单片IC包括经配置以实施非同步降压转换器的高侧场效晶体管(FET)和低侧二极管。
31.根据权利要求28所述的功率变换系统，其中所述功率级单片IC包括与输出负载串联耦合的低侧场效晶体管(FET)和肖特基(Schottky)二极管。
32.根据权利要求28所述的功率变换系统，其包括：
驱动器单片IC，其具有横向结构，所述驱动器单片IC具有有源侧和背侧，所述驱动器单片IC堆叠在所述功率级单片IC的所述背侧上，所述驱动器单片IC的所述背侧安装到所述功率级单片IC的所述背侧，所述驱动器单片IC经配置以驱动所述功率级单片IC。
33.根据权利要求28所述的功率变换系统，其包括：
晶片封装，其围绕所述功率级单片IC、所述控制器单片IC和所述多个接合导线。
34.根据权利要求28所述的功率变换系统，其中所述载体包括印刷电路板。
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