TW201310603A - 背對背堆疊晶粒 - Google Patents

背對背堆疊晶粒 Download PDF

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Publication number
TW201310603A
TW201310603A TW101115441A TW101115441A TW201310603A TW 201310603 A TW201310603 A TW 201310603A TW 101115441 A TW101115441 A TW 101115441A TW 101115441 A TW101115441 A TW 101115441A TW 201310603 A TW201310603 A TW 201310603A
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Taiwan
Prior art keywords
die
back side
power stage
controller
circuit
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TW101115441A
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English (en)
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TWI562324B (en
Inventor
Francois Hebert
Steven R Rivet
Michael Althar
Peter Oaklander
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Intersil Americas LLC
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Publication of TW201310603A publication Critical patent/TW201310603A/zh
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Publication of TWI562324B publication Critical patent/TWI562324B/zh

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    • H—ELECTRICITY
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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Abstract

本文揭示之實施例提供一種電路，該電路包括具有一作用側及一背側之第一晶粒，其中該第一晶粒係覆晶安裝至一載體。該電路亦包括堆疊於該第一晶粒之該背側上的一第二晶粒，其中該第二晶粒堆疊於該第一晶粒上，使得該第二晶粒之一背側面向該第一晶粒之該背側，且該第二晶粒之一作用側背對該第一晶粒。

Description

背對背堆疊晶粒
本文之主題係關於半導體裝置，且詳言之，係關於半導體封裝。
本申請案主張2011年8月17日申請之美國臨時申請案第61/524,382號之優先權的權利，該臨時申請案特此以引用之方式併入本文。
工業中需要具有高功率密度、高效率及低成本的電力轉換系統，諸如DC至DC轉換器。習知電力轉換系統具有若干不同形式。一種此類電力轉換系統包括第一IC中之高側裝置，其堆疊於第二IC中之低側裝置上，其中控制器與高側裝置及低側裝置相鄰。此等電力轉換系統使用銅夾來將高側晶粒與低側晶粒連接在一起。此等銅夾可增加電力轉換系統之成本及大小。此等電力轉換系統亦可使用導線接合來將高側裝置耦合至輸出接腳，此舉可能導致歸因於較高串聯電阻及/或電感的降低之效能。
另一種此類電力轉換系統包括單片式IC，該單片式IC包括高側裝置、低側裝置及控制器。此等電力轉換系統可使用覆晶、晶片級封裝(CSP)及引線框上覆晶(FCOL)來加以構造。因為此等系統將所有組件置放於單片式IC上，所以歸因於整合式高電壓橫向功率裝置之較小Rdson乘以面積(與可用多個晶粒實現之裝置相比)，該等系統通常限於 較低電壓應用。此外，由於控制器、高側裝置及低側裝置皆位於同一IC上，故該系統之橫向尺寸與具有多個堆疊IC之系統相比可能較大。
在一實例中，提供一種電路。該電路包括具有作用側及背側的第一晶粒，其中該第一晶粒覆晶安裝至載體。該電路亦包括堆疊於第一晶粒之背側上的第二晶粒，其中該第二晶粒堆疊於該第一晶粒上，使得該第二晶粒之背側面向該第一晶粒之背側，且該第二晶粒之作用側背對該第一晶粒。
第1圖為具有堆疊於功率級IC 104上之控制器IC 102的電力轉換系統100之一實施例的橫截面圖。功率級IC 104可包括晶粒(亦即，單片式IC)，該晶粒包括具有橫向結構之高側裝置及/或低側裝置。如本文所使用，橫向結構代表其中用於高側裝置及低側裝置之訊號連接(例如，源極、汲極、閘極)位於基板之第一側(在本文中亦稱為「作用側」及「工作表面」)上且基板之相對側(在本文中亦稱為「背側」)可用於連接至基板(例如，直流接地)的結構。具有橫向結構之晶粒可包括具有橫向結構之一或多個元件(例如，電晶體、二極體等)。
在一實例中，高側裝置及低側裝置分別包括一或多個 高側電晶體及低側電晶體(例如，場效電晶體(FETs))，以(例如)實施步降(例如，同步降壓)轉換器。在其他實例中，低側裝置可包括二極體(例如，非同步降壓轉換器中之蕭特基(Schottky)二極體)。在其他實例中，功率級可包括NMOSFET作為低側裝置，其中Schottky二極體與輸出負載串聯耦合。
功率級IC 104可由任何適合之材料以適合之摻雜構成。例如，功率級IC 104可具有由矽、鍺、第III族-第V族或第III族-氮族化合物(例如，氮化鎵、砷化鎵)、絕緣體上矽(SOI)(例如，金剛石上矽、矽上金剛石上矽(silicon on diamond on silicon))及其他材料形成之基板。該基板亦可經適當摻雜以形成(例如)P-基板或P+上Pepi基板(Pepi on P+ substrate)。在SOI實例中，功率級IC 104可為N型或P型背側晶圓。功率級IC 104亦可在背側上具有金屬層，如以下參照第5圖及第6圖所展示及描述。高側裝置及低側裝置可包括任何適合之結構，包括N通道金屬氧化物半導體場效電晶體(MOSFET)、P通道金屬氧化物半導體場效電晶體或N及P通道金屬氧化物半導體場效電晶體之組合(例如，橫向雙擴散MOSFET)、高電子移動性電晶體(HEMT)或其他電晶體，並且只要控制器IC 102相容，則高側裝置及低側裝置可為增強模式或空乏模式。功率級IC 104可根據包括BiCMOS及BCD的任何適合之製程來製造，且可被剝除以減少層之數目或可使用專用製程。
作為橫向結構裝置，功率級IC 104可具有作用側116 及背側118。如以上所提及，作用側116可包括用於功率級IC 104之高側裝置及/或低側裝置的訊號連接(例如，汲極、源極、閘極)。在一些實例中，至功率級IC 104之基板的連接亦可經由作用側116發生。如以下所闡釋，在一些實例中，除了經由作用側116進行連接之外或替代經由作用側116進行連接，至基板之連接可經由功率級IC 104之背側118發生。
功率級IC 104可經配置以覆晶安裝至適合之載體110。載體110可具有用於連接晶粒(例如，功率級IC 104)之晶粒連接側及用於連接至(例如)印刷電路板(PCB)之外部連接側。諸如晶片級封裝焊料凸塊、銅柱或其他機構之互連件可將功率級IC 104之作用側116電耦合及/或熱耦合至載體110以及將功率級IC 104實體安裝於載體110上。
控制器IC 102可包括具有用於控制功率級之操作之組件的晶粒(亦即，單片式IC)。在一實例中，控制器IC 102亦可具有橫向結構，該結構包括作用側120及與作用側120反向之背側122，作用側120包括與該等組件之訊號連接。在一實例中，至基板之連接可經由控制器IC 102之背側122發生。在一些實例中，除了經由背側122進行連接之外或替代經由背側122進行連接，至控制器IC 102之基板的連接可經由作用側120發生。
控制器IC 102可由任何適合之材料以適合之摻雜構成，且可與功率級IC 104相容。例如，控制器IC 102可具有由矽、鍺、第III族-第V族或第III族-氮族化合物(例 如，氮化鎵、砷化鎵)、絕緣體上矽(SOI)(例如，金剛石上矽、矽上金剛石上矽)及其他材料形成之基板。該基板亦可經適當摻雜以形成(例如)P-基板或P+上Pepi基板。在SOI實例中，功率級IC 104可為N型或P型背側晶圓。控制器IC 102可根據包括BiCMOS、BCD及CMOS技術的任何適合製程來製造。
如第1圖中所示，控制器IC 102可堆疊於功率級IC 104上並安裝至功率級IC 104。控制器IC 102可經安置以使得控制器IC 102之背側122面向(例如，朝向)功率級IC 104之背側118並安裝於背側118上。亦即，控制器IC 102之背側122可用適合之晶粒附著化合物108連接至功率級IC 104之背側118。因此，功率級IC 104可相對於控制器IC 102反向。控制器IC 102可使用任何適合之晶粒附著化合物108安裝至功率級IC 104，該晶粒附著化合物108包括導電及非導電環氧樹脂及焊料。以下更詳細闡釋特定晶粒附著實例。
控制器IC 102可用接合導線106電耦合至載體110。接合導線之一端可連接至控制器IC 102之作用側120，且接合導線之相對端可連接至載體110上之相應連接(例如，接腳)。接合導線106可由金、銅、鋁、其組合或其他適合之組合構成。在其他實例中，控制器IC 102可用其他構件電耦合至載體110，該等構件包括但不限於銅夾及鋁帶。
在第1圖中所示之實例中，反向功率級IC 104上堆疊之控制器IC 102處於封裝中。作為經封裝IC，用於堆疊之 控制器IC 102及功率級IC 104的載體110可包括具有複數個接腳之引線框結構。功率級IC 104可使用焊料114連接至接腳。在一實例中，該複數個接腳可包括高側閘極接腳(例如，用於耦合至高側電晶體之閘極)、接腳中之電壓Vin(例如，用於耦合至高側電晶體之汲極)、第一輸出端Vsw(例如，用於耦合至高側電晶體之源極)、DC接地端(例如，用於耦合至基板及/或耦合至低側電晶體之源極)、第二輸出端Vsw(例如，用於耦合至低側電晶體之汲極)、低側閘極接腳(例如，用於耦合至低側電晶體之閘極)及用於耦合至控制器IC 102之各種互連件的複數個控制器IC接腳。在一些實例中，至功率級IC 104之基板的連接可藉由作用側116上基板之暴露部分連接至載體110上之接腳來發生。在基板將被DC接地之實例中，該接腳可耦合至DC接地端。然而，該基板可耦合至包括DC電壓、濾波器網路(例如，用於AC接地端)或AC電壓的任何適合之連接。在其他實例中，基板可為浮置的(例如，未連接)。在一些實例中，至基板的連接可經由功率級IC 104之背側118來發生。參照第5圖及第6圖提供關於經由背側118至基板的背側連接之更多詳情。
在其他實例中，載體110可包括PCB，使得功率級IC 104上堆疊之控制器IC 102直接安裝於PCB上，如參照第12圖所詳細描述。用於電力轉換系統100之封裝可由包括陶瓷、塑膠或環氧樹脂之任何適合之模製化合物112構成。
第2圖為堆疊於功率級IC 104上之控制器IC 102的俯 視圖，功率級IC 104係安裝於載體110之接腳上。如圖所示，載體110上之一些接腳或其部分係自功率級IC 104之邊緣503(例如，佔據面積)向外橫向安置。如圖所示，複數個接合導線106可將控制器IC 102之作用側120上之複數個襯墊502耦合至此等接腳或其部分。在此實例中，存在自所有四個側面上之功率級IC 104之佔據面積503向外橫向安置的接腳或其部分。
此等接腳中之一些接腳可用作用於控制器IC 102之輸入/輸出接腳，以發送訊號/自電力轉換系統100外部之組件接收訊號。此外，此等接腳中之一或多個接腳可自功率級IC 104之邊緣503部分向外安置，且部分地位於功率級IC 104下方(例如，與功率級IC 104之作用側120相對)。此等一或多個接腳可用以藉由將各別接腳之在功率級IC 104下方的部分連接至功率級IC 104(例如，連接至閘極)並將自功率級IC 104之邊緣503向外的接腳部分連接至控制器IC 102之接合導線來將控制器IC 102耦合至功率級IC 104。接合導線506為用以將控制器IC 102耦合至功率級IC 104之接合導線之實例。
如第2圖中所示，控制器IC 102之佔據面積508可比功率級IC 104之佔據面積503小。此可使得功率級IC 104之背側118之多個部分得以暴露及近接。在第2圖中所示之一個、兩個、三個或所有四個側面上，功率級IC 104之佔據面積503可比控制器IC 102之佔據面積508大。在其他實例中，在一個、兩個、三個或所有四個側面上，控制 器IC 102之佔據面積508可比功率級IC 104之佔據面積503大。
第3圖為包括反向功率級IC 104上堆疊之控制器IC 102的電力轉換系統600之另一實例，其中載體610包括用於控制器IC 102之較少輸入/輸出接腳。如圖所示，在功率級IC 104之一側上，載體610上之接腳之外緣與功率級IC 104之佔據面積對準。此實例可在需要較少輸入/輸出接腳用於控制器IC 102時及/或在需要較小封裝時使用。
第4圖為第3圖之控制器IC 102及功率級IC 104之俯視圖。如圖所示，載體110上接腳中之一些或其部分係自功率級IC 104之邊緣503(例如，佔據面積)橫向向外安置。然而，在此實例中，在四個側面中之三個側面上存在自功率級IC 104之佔據面積503橫向向外安置的接腳或其部分。因此，在功率級IC 104之一個側面上，載體110上之接腳並未延伸經過功率級IC 104之邊緣503且與功率級IC 104對準。如圖所示，複數個接合導線106可將控制器IC 102之作用側120上之複數個襯墊502耦合至此等接腳或其部分。
與參照第2圖所描述類似，此等接腳中之一些接腳可用作用於控制器IC 102之輸入/輸出接腳，以發送訊號/自電力轉換系統100外部之組件接收訊號。此外，此等接腳中之一或多個接腳可自功率級IC 104之邊緣503部分地向外安置且部分地位於功率級IC 104下方(例如，與功率級IC 104之作用側120相對)。此等一或多個接腳可用以藉由將 各別接腳之在功率級IC 104下方之部分連接至功率級IC 104(例如，連接至閘極)並將自功率級IC 104之邊緣503向外的接腳部分連接至控制器IC 102之接合導線來將控制器IC 102耦合至功率級IC 104。接合導線506為用以將控制器IC 102耦合至功率級IC 104之接合導線之實例。
在一些實例中，如第2圖所示，控制器IC 102之佔據面積508可比功率級IC 104之佔據面積503小。此可使得功率級IC 104之背側118之多個部分得以暴露及近接。參照第5圖至第9圖提供關於功率級IC 104之背側118之使用的更多詳情。
第5圖為包括反向功率級IC 104上堆疊之控制器IC 102的電力轉換系統800之又一實例，其中在功率級IC 104之背側118上安置有金屬層802(亦稱為「背部金屬」)。金屬層802可提供自功率級IC 104至控制器IC 102的減少之雜訊耦合。此外，金屬層802可經由導線接合804耦合至載體110上之接腳。此導線接合804可提供經由功率級IC 104之背側118連接至功率級IC 104之基板。在基板將被DC接地之實例中，接腳可耦合至DC接地端。然而，在其他實例中，接腳可耦合至包括DC電壓、濾波器網路或AC電壓之任何適合之連接。在其他實例中，基板可為浮置的(例如，無導線接合804)。
晶粒附著化合物108可置放於金屬層802與控制器IC 102之間。在此，可將導電環氧樹脂或焊料用作晶粒附著物108，以將控制器IC 102之背側122電耦合至功率級IC 104 之背側118及接合導線804。此外，在一些實例中，控制器IC 102亦可在其背側122上具有金屬層。因此，導電環氧樹脂或焊料可將控制器IC 102之背側122上的金屬層電耦合至功率級IC 104之背側118及導線接合804。因此，至控制器IC 102之基板的連接亦可經由其背側122來發生。在基板將被DC接地之實例中，耦合至該基板之接腳可耦合至DC接地端。然而，該基板可耦合至包括DC電壓、濾波器網路或AC電壓之任何適合之連接。在其他實例中，基板可為浮置的(例如，與功率級IC 104之背側118電絕緣及/或未連接至導線接合804)。
功率級IC 104及/或控制器IC 102之背側上的金屬層可由包括以下材料之任何適合之材料構成：TiNiAg、TiNiAu、CrAu、TiAl、TI(AlCu)合金(例如，鋁中0.5%銅)、TiCuAl(Ti、銅、鋁之單獨層，其中Ti為薄的(約100埃至3000埃)以獲得黏著力及低接觸電阻，Cu可為薄或厚的(約1000埃至3微米)以減小電阻，且Al用以避免銅之氧化且可為薄的(例如，200埃至1微米))。在其中功率級IC 104及/或控制器IC 102包括此金屬層的實例中，用於功率級IC 104及/或控制器IC 102之基板可為具有P+之Pepi基板(Pepi with P+ substrate)或P-基板。
第6圖為展示堆疊於功率級IC 104上之控制器IC 102的電力轉換系統800之俯視圖，功率級IC 104係安裝於載體110之接腳上。如圖所示，接合導線804連接至功率級IC 104之背側118(例如，金屬層802)之暴露區域。此接 合導線804耦合於載體110上之一接腳(例如，接地接腳)的另一端，該接腳係自功率級IC 104之佔據面積503向外橫向安置。
第7圖為包括反向功率級IC 104上堆疊之控制器IC 102的電力轉換系統1000之另一實例，其中功率級IC 104在背側118上包括金剛石1002。金剛石1002可用於功率級IC 104之背側118上，以改良跨越功率級IC 104之熱流。亦即，金剛石1002可提供熱自功率級IC 104上之熱點至可耗散熱之位置的有效橫向運動。此熱轉移可包括熱轉移至功率級IC 104上之較冷位置及/或轉移至可允許熱耗散出封裝之熱插塞。參照第8圖提供關於熱插塞之更多詳情。
金剛石1002可以任何適合之形式形成。例如，功率級IC 104可具有金剛石基板上之矽或矽基板上之金剛石上之矽。在其他實例中，功率級IC 104可由標準基板(例如，矽)構成，且可將其中具有金剛石之另一基板接合至該基板之背側。此外，金剛石1002在性質上可為微晶或奈米晶。在一些實例中，金剛石1002可為P矽基板上之經摻雜之P型(例如，硼)，以促成功率級IC 104之基板之接地。除了散佈來自功率級IC 104之熱以外，金剛石104亦可輔助散佈來自控制器IC 102之背側122之熱。因此，熱梯度可使控制器IC 102與功率級IC 104兩者平穩。此外，金剛石可改良控制器IC 102與功率級IC 104之間的熱耦合，此可使得更易於保護電力轉換系統1000免於過熱。在一實例中，晶粒附著物108可為導熱材料(例如，環氧樹脂、焊 料)，且可安置於功率級IC 104之背側118上之金剛石1002與控制器IC 102之背側122之間。在其他實例中，不同於金剛石1002之材料可用作用於功率級IC 104之背側118的散熱器。
第8圖為包括反向功率級IC 104上堆疊之控制器IC 102的電力轉換系統1100之另一實例，其中熱插塞1102連接至功率級IC 104之背側118。熱插塞1102可藉由使熱能夠經由電力轉換系統1102之頂部耗散來輔助耗散來自功率級IC 104之熱。熱插塞1102可連接至功率級IC 104之背側118之暴露區域，且可延伸穿過將暴露於電力轉換系統1100之頂部之外部部分上的封裝。在其他實例中，可使用可(例如)連接至功率級IC 104之側面的其他類型之熱插塞。
第9圖為包括反向功率級IC 104上堆疊之控制器IC 102的電力轉換系統1200之另一實例，其在功率級IC 104之背側118上具有熱插塞1102及金剛石1002兩者。在此，熱插塞1102可具有與參照第8圖所描述之相同的功能，且金剛石1002可用以藉由提供跨越功率級IC 104及控制器IC 102至熱插塞1102的更有效之熱轉移來進一步增加熱插塞1102之熱耗散。
第10圖為包括堆疊於反向功率級IC 104上之多個IC 102、1302的電力轉換系統1300之又一實例。在此實例中，多個IC 102、1302包括控制器IC 102及驅動器IC 1302。類似於如上所述之控制器IC 102，驅動器IC 1302可包括晶 粒(亦即，單片式IC)，該晶粒具有用於驅動功率級IC 104中之高側裝置及/或低側裝置的組件。在一實例中，驅動器IC 1302可具有橫向結構，該結構包括作用側(包括至組件之訊號連接)及背側，在一些實例中，該背側可用作至基板之連接(例如，DC接地端)。在其他實例中，可將兩個以上單片式IC(亦即，晶粒)堆疊於功率級IC 104上。
可如參照第1圖所描述而堆疊多個IC 102、1302。例如，可使用任何適合之晶粒附著化合物108將多個IC 102、1302安裝至功率級IC 104，該晶粒附著化合物108包括導電及非導電性環氧樹脂及焊料。在一些實例中，可安置堆疊於功率級IC 104上之IC 102、1302中之一或多者，使得一或多個IC 102、1302之背側安裝於功率級IC 104之背側118上。亦即，可用適合之晶粒附著化合物108將IC 102、1302中之一或多者之背側連接至功率級IC之背側118。
可用接合導線106將多個IC 102、1302電耦合至載體110。接合導線之一端可連接至多個IC 102、1302之作用側，且該接合導線之相對端可連接至載體110上之接腳。多個IC 102、1302亦可經由一或多個晶粒電耦合至晶粒接合導線1304。
在一些實例中，電力轉換系統1300可具有如參照第5圖所論述之耦合至載體110之功率級IC 104的背側118。此外，在一些實例中，電力轉換系統1300可在功率級IC 104之背側118上包括金剛石。最後，電力轉換系統1300之一些實例可在功率級IC 104之背側118上包括熱插塞。
第11圖為具有堆疊於反向功率級IC 104上之控制器IC 102以及安裝於控制器IC 102上之橋式電感器1402的電力轉換系統1400之另一實例的橫截面圖。功率級IC 104可覆晶安裝至載體1401上，且控制器IC 102可如參照第1圖所述而堆疊並安裝於功率級IC 104上。所堆疊之控制器IC 102及功率級104可安置於電感器1402下方，電感器1402以銅支撐件1404電耦合並連接至載體1401。電感器1402、功率級IC 104及控制器IC 102可由適合之模製化合物1406圍繞。
第12圖為包括反向功率級IC上複數個堆疊之控制器IC之印刷電路板(PCB)1500之一實施例的俯視圖。如圖所示，堆疊於功率級IC 104上之控制器IC 102亦可安裝於PCB 1500上。在此，功率級IC 104可安裝於PCB 1500上，且控制器IC 102可如參照第1圖所述而堆疊並安裝於功率級IC 104上。在一實例中，可使用HLA構造。如圖所示，在PCB 1500上可包括多個堆疊之控制器IC及功率級IC組合1502。在PCB 1500上使用此組合可使得自(例如)第一功率級IC 104上之控制器IC 102至不同(第二)功率級IC 104能夠進行晶粒至晶粒導線接合。堆疊控制器IC 102亦可使得能夠減少用於耦合至控制器IC 102之導線接合長度。此外，PCB 1500可包括蝕刻之電感器以及包括離散組件之其他組件。
功率級IC 104上堆疊之控制器IC 102可用於許多電路配置中，該配置包括DC至DC電力轉換器、充電器、熱調 換控制器、AC至DC轉換器、橋式驅動器、降壓轉換器、升壓轉換器、降壓升壓轉換器、同步降壓轉換器或其他適合之電路。
在一些實例中，堆疊於功率級IC 104上之控制器IC 102可提供高功率密度用於電力轉換系統。功率密度可對應於相對於電力轉換系統之佔據面積的電力轉換系統之電流及電壓額定值，其中相對於佔據面積之較高電流及電壓額定值對應於較高功率密度。此外，一些實例中，功率級104上堆疊之控制器IC 102可在電力轉換系統中提供高效率，其中效率與電力轉換系統之功率級之串聯電阻(Rdson)有關，且較低串聯電阻對應於較高效率。此外，在一些實例中，功率級104上堆疊之控制器IC 102可提供低成本電力轉換系統，其中成本係基於系統之RdsON乘以面積，且其中較低Rdson乘以面積對應於較低成本製造技術(例如，較少的遮蔽層數目)及封裝裝配技術(例如，較少的步驟之數目及材料賬單)。
儘管在本文中作為單獨圖進行描述，但可將不同圖之適合組件一起整合於單個電力轉換系統中。例如，電力轉換系統可包括堆疊於功率級IC上之控制器IC，其中在背側上具有熱插塞(如第8圖中所示)且至其背側具有接地或其他連接(如第5圖中所示)。亦可進行其他組合。
具有堆疊於反向功率級IC 104上之控制器IC 102的諸如系統100、600、800、1000、1100、1200及1300之電力轉換系統可製造為經封裝IC，如相應圖中所示。以下提供 用於將電力轉換系統製造為經封裝IC之示範性步驟。
將電力轉換系統製造為經封裝IC可包括同時製造複數個經封裝IC。因此，可將複數個引線框提供為彼此相鄰，每一引線框上裝配有電力轉換系統。一旦得以裝配，則可將引線框及相關聯之組件進行單一化以形成個別經封裝IC。以下描述代表形成單個經封裝IC之製程，但應理解，該製程可涉及同時形成複數個經封裝IC。
功率級IC 104、控制器IC 102及引線框皆經獲得而用於製造經封裝IC。可使用半導體製程來將功率級IC 104製造為具有橫向結構之晶粒(例如，單片式IC)。類似地，可使用半導體製程將控制器IC 102製造為具有橫向結構之晶粒(例如，單片式IC)。在功率級IC 104包括諸如金屬層802(如第5圖中所示)或金剛石層1002(如第9圖中所示)之背側層的實例中，可在製造期間添加背側層。例如，可在單一化複數個功率級IC 104之晶圓之前在該晶圓之背側上沈積金屬層802。對於金剛石層1002而言，可在單一化複數個功率級IC 104之晶圓之前，將具有金剛石層之基板安裝至該晶圓之背側。金剛石層1002亦可藉由在單一化複數個功率級IC 104之晶圓之前沈積於該晶圓之背側上來形成。
可將功率級IC 104安裝至引線框，使得作用側116附著且電耦合至引線框上之襯墊。在一實例中，可使用焊料遮罩及焊漆來用焊料114塗佈引線框。在另一實例中，可在單一化複數個功率級IC 104之晶圓(例如，使用晶片級 封裝(CSP)技術)之前，將複數個焊料球置放於該晶圓之作用側116上。在任何狀況下，可將功率級IC 104與引線框對準並置放於引線框上。在一些實例中，一旦功率級IC 104位於引線框上之適當位置，即可對焊料114進行回焊。
可將控制器IC 102安裝至功率級IC 104之背側118，使得控制器IC 102之背側122面向並附著至功率級IC 104之背側118。為了實現此，功率級IC 104之背側118、控制器IC 102之背側122或兩者可塗佈有諸如焊料或環氧樹脂之適當晶粒附著化合物108。在一實例中，可在單一化複數個控制器IC 102之晶圓之前，將晶粒附著化合物108塗佈於該晶圓之背側122上。除了控制器IC 102之背側122之外或替代控制器IC 102之背側122，可在單一化複數個功率級IC 104之晶圓之前，將晶粒附著化合物108塗佈於該晶圓之背側118上。在其他實例中，可在單一化之後將晶粒附著化合物108置放於控制器IC 102之背側122及/或功率級IC 104之背側118上。在於背側上具有晶粒附著化合物108的情況下，可將控制器IC 102置放於功率級IC 104之背側118上。可藉由對焊料進行回焊或使環氧樹脂固化來將控制器IC 102固定至功率級IC 104之背側118。
在包括熱插塞1102(例如，如第8圖及第9圖中所示)之實例中，可將熱插塞1102定位於與控制器IC 102相鄰的功率級IC 104之背側118上，且使用適當黏合劑將熱插塞1102黏附至背側118。在除了安裝於功率級IC 104上之控制器IC 102之外亦包括一或多個晶粒的實例中，可使用適 合之晶粒附著化合物108將額外一或多個晶粒安裝至功率級IC 104之背側118。例如，可使用半導體製程將驅動器IC 1302製造為具有橫向結構之晶粒(例如，單片式IC)。可將驅動器IC 1302安裝至功率級IC 104，使得驅動器IC 1302之背側附著至功率級IC 104之背側118。可用與參照控制器IC 102所描述類似之方式安裝驅動器IC 1302。
在一實例中，用以將任何晶粒(例如，控制器IC 102、驅動器IC 1302)附著至功率級IC 104之焊料可具有與用以將功率級IC 104連接至引線框之焊料114不同之熔化溫度。在其他實例中，焊料可具有類似之熔化溫度。
一旦得以安裝，即可將控制器IC 102電耦合至引線框。在一實例中，可藉由導線接合將控制器IC 102自作用側120電耦合至引線框上之適當襯墊。在其他實例中，可將銅夾或鋁帶耦合至作用側120及引線框。在功率級IC 104之背側118電耦合至引線框(例如，接地接腳)之實例中，導線接合可包括將一或多個導線接合耦合至功率級IC 104之背側118及耦合至引線框上之適當襯墊。可一次性或一次以上地發生用於控制器IC 102及功率級IC 104之導線接合。在包括安裝至功率級IC 104之背側118的一或多個額外晶粒之實例中(例如，如第10圖中所示)，該一或多個額外晶粒之作用側可電耦合(例如，使用導線接合、銅夾或鋁帶)至控制器IC 102之作用側120及/或耦合至引線框上之一或多個適當襯墊。
一旦已將控制器IC 102及功率級IC 104電耦合至引線 框，即可將模製化合物112塗覆於控制器IC 102、功率級IC 104及引線框上。在同時形成複數個經封裝IC之製程中，可將模製化合物112塗覆於複數個經裝配之電力轉換系統結構上。一旦塗覆模製化合物112，即可固化模製化合物112。在一些實例中，可將經固化之模製化合物112之頂部接地，(例如)以暴露在封裝外部之熱插塞1102。在同時形成複數個經封裝IC時，可單一化塗覆及固化模製化合物112之後的結構，以形成具有堆疊於反向功率級IC 104上之控制器IC 102的複數個個別經封裝IC。
具有堆疊於反向功率級IC 104上之控制器IC 102的諸如系統100、600、800、1000、1100、1200、1300、1400及第12圖所示之系統的電力轉換系統可對各種負載提供經調節之電力。電力轉換系統可接收未經調節之電力(例如，線路電力)、調節該未經調節之電力，且向負載提供經調節之電力。如應理解，電力轉換系統可結合其他組件及裝置來操作，以提供經調節之電力。
第13圖為包括此種電力轉換系統之示範性系統1600的方塊圖。系統1600包括耦合至一或多個處理裝置1604及一或多個記憶體裝置1606之一或多個電力轉換系統1602。該一或多個電力轉換系統1602可接收未經調節之電力(例如，線路電力)、調節該電力，且向一或多個處理裝置1604及一或多個記憶體裝置1606提供經調節之電力。在一實例中，該一或多個處理裝置1604可包括中央處理單元(CPU)、微控制器、微處理器(例如，數位訊號處理 器(DSP))、場可程式化閘陣列(FPGA)、特殊應用積體電路(ASIC)或其他處理裝置。該一或多個記憶體裝置1606可包括習知硬碟、揮發性或非揮發性媒體(諸如，固態硬碟機)、隨機存取記憶體(RAM)(包括但不限於同步動態隨機存取記憶體(SDRAM)、雙資料速率(DDR)RAM、RAMBUS動態RAM(RDRAM)、靜態RAM(SRAM)等)、電子可抹除可程式化唯讀記憶體(EEPROM)及快閃記憶體等。該一或多個處理裝置1604可通訊地耦合至該一或多個記憶體裝置1606。
在其他實例中，替代一或多個處理裝置及一或多個記憶體裝置或除了一或多個處理裝置及一或多個記憶體裝置之外，此電力轉換系統可向其他功能電路提供經調節之電力。例如，此電力轉換系統可向內部裝置組件、周邊裝置及其他組件提供電力。可在使用經調節之電力的任何適合之電子裝置中包括此電力轉換系統，該電子裝置諸如桌上型電腦、膝上型電腦或平板型電腦、轉頻器、電池充電器或其他裝置。
已描述由以下申請專利範圍界定之本發明之若干實例。然而，將理解，在不偏離所主張之本發明之精神及範疇的情況下，可對所描述實例進行各種修改。本文描述之特定實例之特徵及態樣可與其他實例之特徵及態樣進行組合或取代其他實例之特徵及態樣。因此，其他實例在以下申請專利範圍之範疇內。
100‧‧‧電力轉換系統
102‧‧‧控制器IC
104‧‧‧功率級IC
106‧‧‧接合導線
108‧‧‧晶粒附著化合物
110‧‧‧載體
112‧‧‧模製化合物
114‧‧‧焊料
116‧‧‧作用側
118‧‧‧背側
120‧‧‧作用側
122‧‧‧背側
502‧‧‧襯墊
503‧‧‧佔據面積
506‧‧‧接合導線
508‧‧‧佔據面積
600‧‧‧電力轉換系統
610‧‧‧載體
800‧‧‧轉換系統
802‧‧‧金屬層
804‧‧‧導線接合
1000‧‧‧電力轉換系統
1002‧‧‧金剛石
1100‧‧‧電力轉換系統
1102‧‧‧熱插塞
1102‧‧‧電力轉換系統
1200‧‧‧電力轉換系統
1300‧‧‧電力轉換系統
1302‧‧‧驅動器IC
1304‧‧‧接合導線
1400‧‧‧電力轉換系統
1401‧‧‧載體
1402‧‧‧橋式電感器
1404‧‧‧銅支撐件
1406‧‧‧模製化合物
1500‧‧‧印刷電路板(PCB)
1502‧‧‧組合
1600‧‧‧示範性系統
1602‧‧‧電力轉換系統
1604‧‧‧處理裝置
1606‧‧‧記憶體裝置
第1圖為具有堆疊於反向功率級上之控制器IC的積體電路(IC)電力轉換系統之一實施例的橫截面圖。
第2圖為第1圖之電力轉換系統之一實施例的俯視圖。
第3圖為具有堆疊於反向功率級上之控制器IC的電力轉換系統之另一實施例的橫截面圖，其中該電力轉換系統具有比第1圖中所示之實施例少的控制器接腳。
第4圖為第3圖之電力轉換系統之一實施例的俯視圖。
第5圖為具有堆疊於反向功率級上之控制器IC的電力轉換系統之又一實施例的橫截面圖，其中該功率級在其背側上包括金屬層。
第6圖為第5圖之電力轉換系統之一實施例的俯視圖。
第7圖為具有堆疊於反向功率級上之控制器IC的電力轉換系統之又一實施例的橫截面圖，其中該功率級在其背側上包括金剛石。
第8圖為具有堆疊於反向功率級上之控制器IC的電力轉換系統之另一實施例的橫截面圖，其中該電力轉換系統包括熱插塞。
第9圖為具有堆疊於反向功率級上之控制器IC的電力轉換系統之又一實施例的橫截面圖，其中該電力轉換系統在該功率級之背側上包括熱插塞及金剛石。
第10圖為具有堆疊於反向功率級IC上之多個IC的電力轉換系統之又一實施例的橫截面圖。
第11圖為具有堆疊於反向功率級IC上之控制器IC以及安裝於控制器IC上之橋式電感器的電力轉換系統之另一 實施例的橫截面圖。
第12圖為包括堆疊於反向功率級上之複數個控制器IC的印刷電路板之一實施例的俯視圖。
第13圖為包括具有堆疊於反向功率級上之控制器IC之電力轉換系統的系統之一實施例的方塊圖，該系統對處理裝置及記憶體裝置提供經調節之電力。
100‧‧‧電力轉換系統
102‧‧‧控制器IC
104‧‧‧功率級IC
106‧‧‧接合導線
108‧‧‧晶粒附著化合物
110‧‧‧載體
112‧‧‧模製化合物
114‧‧‧焊料
116‧‧‧作用側
118‧‧‧背側
120‧‧‧作用側
122‧‧‧背側

Claims (45)

  1. 一種電路，其包括：一第一晶粒，其具有一作用側及一背側，其中該第一晶粒覆晶安裝至一載體；及一第二晶粒，其堆疊於該第一晶粒之該背側上，其中該第二晶粒堆疊於該第一晶粒上，使得該第二晶粒之一背側面向該第一晶粒之該背側，且該第二晶粒之一作用側背對該第一晶粒。
  2. 如申請專利範圍第1項之電路，其中該第一晶粒在該背側上包括一金屬層。
  3. 如申請專利範圍第2項之電路，其包括將該第一晶粒之該金屬層耦合至該載體之一或多個接合導線。
  4. 如申請專利範圍第3項之電路，其中該金屬層係耦合至一DC接地端、一DC偏電壓或一濾波器網路中之一者。
  5. 如申請專利範圍第1項之電路，其中該第二晶粒之該背側係電耦合至該第一晶粒之該背側。
  6. 如申請專利範圍第5項之電路，其中該第二晶粒係使用一導電環氧樹脂或焊料中之一者而安裝至該第一晶粒。
  7. 如申請專利範圍第1項之電路，其中該第一晶粒具有一橫向結構，且包括一高側裝置及一低側裝置；且其中該第二晶粒具有一橫向結構，且包括用於該高側裝置及該低側裝置之一控制器。
  8. 如申請專利範圍第1項之電路，其包括：一晶片封裝，其圍繞該第一晶粒及該第二晶粒，其中 該載體包括複數個接腳，其中該第一晶粒經安裝使得該作用側耦合至該複數個接腳中之一或多者。
  9. 如申請專利範圍第8項之電路，其包括將該第二晶粒之該作用側耦合至該複數個接腳之一子集的接合導線，其中該複數個接腳之該子集係安置成至少部分地自該第一晶粒之一佔據面積向外。
  10. 如申請專利範圍第9項之電路，其中該複數個接腳之一子集係安置成與該第一晶粒之該作用側部分地相對且自該第一晶粒之一佔據面積部分地向外，其中該子集耦合至該第一晶粒之該作用側且耦合至該複數個接合導線中之一或多者。
  11. 如申請專利範圍第8項之電路，其包括一熱插塞，該熱插塞熱耦合至該第一晶粒之該背側且暴露於該晶片封裝之一外表面處。
  12. 如申請專利範圍第1項之電路，其中該第一晶粒在該背側上包括金剛石。
  13. 如申請專利範圍第1項之電路，其中該第二晶粒係使用一非導電性環氧樹脂而安裝至該第一晶粒。
  14. 如申請專利範圍第1項之電路，其中該第一晶粒包括選自包括以下各者之群組的一基板：矽、絕緣體上矽、金剛石上矽、矽上金剛石上矽(silicon on diamond on silicon)、氮化鎵、砷化鎵。
  15. 如申請專利範圍第1項之電路，其中該第一晶粒包括一P-基板、P-上Pepi基板(Pepi on P-substrate)、P+上Pepi 基板中之一者。
  16. 如申請專利範圍第1項之電路，其中該第一晶粒在該作用側上包括焊料凸塊、銅柱或可焊接襯墊中之一者。
  17. 如申請專利範圍第1項之電路，其中該電路包括一電力轉換系統，該電力轉換系統包括一DC至DC電力轉換器、一充電器、一熱調換控制器、一AC至DC轉換器、一橋式驅動器、一降壓轉換器、一升壓轉換器、一降壓升壓轉換器及一同步降壓轉換器中之一者。
  18. 如申請專利範圍第1項之電路，其包括：一第三晶粒，其堆疊於該第一晶粒之該背側上，其中該第三晶粒堆疊於該第一晶粒上，使得該第三晶粒之一背側面向該第一晶粒之該背側且該第三晶粒之一作用側背對該第一晶粒。
  19. 如申請專利範圍第18項之電路，其中該第一晶粒包括一高側裝置及一低側裝置，其中該高側裝置及該低側裝置具有一橫向結構；其中該第二晶粒包括用於該高側裝置及該低側裝置之一控制器；且其中該第三晶粒包括用於該高側裝置及該低側裝置之一驅動器。
  20. 一種積體電路(IC)，其包括：一引線框結構；一第一晶粒，其具有一作用側及一背側，該第一晶粒安裝至該引線框結構，使得該作用側面向該引線框結構且 耦合至該引線框結構；一第二晶粒，其具有一作用側及一背側，該第二晶粒堆疊於該第一晶粒上，使得該第二晶粒之該背側面向該第一晶粒之該背側；及複數個接合導線，其耦合至該第二晶粒之該作用側且耦合至該引線框結構。
  21. 如申請專利範圍第20項之IC，其中該第一晶粒在該背側上包括一金屬層，該經封裝IC包括將該第一晶粒之該金屬層耦合至該引線框結構之一或多個接合導線。
  22. 如申請專利範圍第20項之IC，其包括：一導電環氧樹脂或焊料中之一者，其將該第二晶粒之該背側實體連接且電耦合至該第一晶粒之該背側。
  23. 如申請專利範圍第20項之IC，其中該第一晶粒包括具有一高側裝置及一低側裝置之一功率級；且其中該第二晶粒包括用於該高側裝置及該低側裝置之一控制器。
  24. 如申請專利範圍第23項之IC，其包括：一第三晶粒，其堆疊於該第一晶粒之該背側上，其中該第三晶粒堆疊於該第一晶粒上，使得該第三晶粒之一背側面向該第一晶粒之該背側且該第三晶粒之一作用側背對該第一晶粒，其中該第三晶粒包括用於該高側裝置及該低側裝置之一驅動器。
  25. 如申請專利範圍第20項之IC，其包括：一模製化合物，其圍繞該第一晶粒及該第二晶粒；及 一熱插塞，其熱耦合至該第一晶粒之該背側且暴露於該模製化合物之一外表面處。
  26. 如申請專利範圍第20項之IC，其中該第一晶粒在該背側上包括金剛石。
  27. 如申請專利範圍第20項之IC，其中該第一晶粒包括將該作用側耦合至該引線框結構的焊料凸塊、銅柱或可焊接襯墊中之一者。
  28. 一種電力轉換系統，其包括：一功率級單片式積體電路(IC)，其具有一橫向結構，該功率級單片式IC包括一作用側及一背側，該功率級單片式IC之該作用側安裝至一載體；一控制器單片式IC，其具有一橫向結構，該控制器單片式IC包括一作用側及一背側，該控制器單片式IC係堆疊於該功率級單片式IC上，該控制器單片式IC之該背側安裝至該功率級單片式IC之該背側，其中該控制器單片式IC經配置以控制該功率級IC；及複數個接合導線，其耦合至該控制器單片式IC之該作用側及該載體。
  29. 如申請專利範圍第28項之電力轉換系統，其中該功率級單片式IC包括經配置以實施一同步降壓轉換器的一高側場效電晶體(FET)及一低側FET。
  30. 如申請專利範圍第28項之電力轉換系統，其中該功率級單片式IC包括經配置以實施一非同步降壓轉換器的一高側場效電晶體(FET)及一低側二極體。
  31. 如申請專利範圍第28項之電力轉換系統，其中該功率級單片式IC包括與一輸出負載串聯耦合之一低側場效電晶體(FET)及一蕭特基(Schottky)二極體。
  32. 如申請專利範圍第28項之電力轉換系統，其包括：一驅動器單片式IC，其具有一橫向結構，該驅動器單片式IC具有一作用側及一背側，該驅動器單片式IC堆疊於該功率級單片式IC之該背側上，該驅動器單片式IC之該背側安裝至該功率級單片式IC之該背側，該驅動器單片式IC經配置以驅動該功率級單片式IC。
  33. 如申請專利範圍第28項之電力轉換系統，其包括：一晶片封裝，其圍繞該功率級單片式IC、該控制器單片式IC及該複數個接合導線。
  34. 如申請專利範圍第28項之電力轉換系統，其中該載體包括一印刷電路板。
  35. 一種製造一封裝電路之方法，該封裝電路具有安裝於一反向第二晶粒上之一第一晶粒，該方法包括：將該第二晶粒安裝至一引線框，使得該第二晶粒之一作用側附著至該引線框；將該第一晶粒安裝至該第二晶粒之該背側，使得該第一晶粒之一背側附著至該第二晶粒之該背側；及將該第一晶粒之該作用側電耦合至該引線框。
  36. 如申請專利範圍第35項之方法，其中該第一晶粒及該第二晶粒具有一橫向結構，且其中該第一晶粒包括一控制器，且該第二晶粒包括一功率級。
  37. 如申請專利範圍第35項之方法，其中將該第二晶粒安裝至一引線框包括使用該第二晶粒上之焊料球或該引線框之襯墊上之焊料中的一或多者來將該第二晶粒電耦合至該引線框。
  38. 如申請專利範圍第35項之方法，其中將該第一晶粒安裝至該第二晶粒之該背側包括使用焊料或環氧樹脂中之一者來將該第一晶粒之該背側附著至該第二晶粒之該背側。
  39. 如申請專利範圍第35項之方法，其中將該第一晶粒之該作用側電耦合至該引線框包括使用一或多個銅夾或使用一或多個鋁帶進行導線接合。
  40. 如申請專利範圍第35項之方法，其包括：將該第二晶粒之該背側電耦合至該引線框。
  41. 如申請專利範圍第35項之方法，其包括：將一熱插塞附著至該第二晶粒之該背側；及研磨該模製化合物以暴露該熱插塞。
  42. 如申請專利範圍第35項之方法，其包括：將一第三晶粒安裝至該第二晶粒之該背側，使得該第三晶粒之一背側附著至該第二晶粒之該背側；及將該第三晶粒之一作用側電耦合至該第一晶粒之該作用側。
  43. 如申請專利範圍第35項之方法，其包括：在該第二晶粒及該第一晶粒上沈積模製化合物；及固化該模製化合物。
  44. 一種電子裝置，其包括：一或多個處理裝置；一或多個記憶體裝置，其通訊地耦合至該一或多個處理裝置；及一或多個電力轉換系統，其耦合至該一或多個處理裝置及該一或多個記憶體裝置，該一或多個電力轉換系統具有安裝於一功率級晶粒上之一控制器晶粒，使得該控制器晶粒之一背側附著至該功率級晶粒之一背側且經配置以對該一或多個處理裝置及該一或多個記憶體裝置提供經調節之電力。
  45. 如申請專利範圍第44項之電子裝置，其中該電子裝置包括桌上型電腦、膝上型電腦或平板型電腦、一轉頻器或一電池充電器中之一者。
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US20170053904A1 (en) 2017-02-23
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US9524957B2 (en) 2016-12-20
US20190267365A1 (en) 2019-08-29

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