CN110137327A - 发光设备 - Google Patents
发光设备 Download PDFInfo
- Publication number
- CN110137327A CN110137327A CN201910030962.4A CN201910030962A CN110137327A CN 110137327 A CN110137327 A CN 110137327A CN 201910030962 A CN201910030962 A CN 201910030962A CN 110137327 A CN110137327 A CN 110137327A
- Authority
- CN
- China
- Prior art keywords
- rod type
- electrode
- type led
- insulating layer
- luminaire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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- G—PHYSICS
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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Abstract
发光设备包括:衬底;第一电极,位于衬底上;金属构件,位于第一电极上并且具有腔体;第一绝缘层,位于金属构件上并且穿过第一绝缘层来暴露腔体;棒型LED,具有第一端部和第二端部;以及第二电极,位于第一绝缘层上。棒型LED的第一端部位于腔体中并且电连接至第一电极,并且棒型LED的第二端部突出到腔体的外部并且电连接至第二电极。
Description
相关申请的交叉引用
本申请要求于2018年2月8日提交至韩国知识产权局(KIPO)的韩国专利申请10-2018-0015888的优先权和权益,该韩国专利申请的全部公开内容通过引用并入本文。
技术领域
本公开的方面涉及发光设备及其制造方法。
背景技术
发光二极管(在下文中简称为LED)即使在不良的环境条件下也展现出相对令人满意的耐久性,并且在寿命和亮度方面具有优良的性能。最近,已经积极开展了对于将LED应用于各种发光设备的研究。
已经研究了通过使用无机晶体结构(诸如,其中生长有基于氮化物的半导体的结构)来制造成微米级或纳米级的棒型LED(例如,微小棒型LED)的技术。例如,棒型LED可制造成尺寸足够小以构成自发光显示面板等的像素。
发明内容
本公开的实施方式提供了这样的发光设备及发光设备的制造方法,该发光设备包括棒型LED并且具有均匀或基本均匀的亮度特性。
根据本公开实施方式,发光设备包括:衬底;第一电极,位于衬底上;金属构件,位于第一电极上并且具有腔体;第一绝缘层,位于金属构件上并且穿过第一绝缘层来暴露腔体;棒型LED,具有第一端部和第二端部;以及第二电极,位于第一绝缘层上。棒型LED的第一端部位于腔体中并且电连接至第一电极,以及棒型LED的第二端部突出到腔体的外部并且电连接至第二电极。
腔体的内部部分的宽度可大于到腔体的入口的宽度。
金属构件的厚度可小于棒型LED的长度。
金属构件中的腔体可暴露第一电极。
发光设备还可包括位于腔体中的多个棒型LED。
第一绝缘层可具有相对于腔体倾斜的倾斜表面,并且棒型LED可倾斜地倚靠到第一绝缘层的倾斜表面上。
一个像素区域可包括多个棒型LED,并且一个像素区域中的棒型LED可在同一方向上倾斜。
一个像素区域可包括多个棒型LED,并且一个像素区域中的棒型LED可在彼此不同的方向上倾斜。
发光设备还可包括位于第一电极和棒型LED的位于腔体中的第一端部之间的连接构件。
发光设备还可包括位于第一绝缘层和第二电极之间的第二绝缘层。第二绝缘层可具有接触开口,棒型LED的第二端部和第二电极在接触开口处彼此电连接。
发光设备还可包括位于第一电极的两侧处的对齐线。
根据本公开另一实施方式,制造发光设备的方法包括:在衬底上形成第一电极;在第一电极上形成金属构件;在金属构件上方形成第一绝缘层;移除第一绝缘层的一部分以暴露金属构件;在金属构件中形成腔体;布置棒型LED使得棒型LED的第一端部位于腔体中并且电连接至第一电极;以及在第一绝缘层上形成第二电极,第二电极电连接至棒型LED的第二端部。
金属构件中的腔体可具有其内部部分的宽度大于其入口的宽度的形状。
腔体可通过各向同性蚀刻来形成。
金属构件的厚度可小于棒型LED的长度。
第一绝缘层可具有相对于腔体倾斜的倾斜表面,并且棒型LED可倾斜地倚靠到第一绝缘层的倾斜表面上。
布置棒型LED可包括:在第一绝缘层上提供包括多个棒型LED的LED溶液;以及在提供LED溶液之后,在一个方向上清洁衬底。
该方法还可包括:在第一电极与棒型LED的位于腔体中的第一端部之间形成连接构件。
形成连接构件可包括:在第一绝缘层上和腔体中形成连接构件层;以及蚀刻连接构件层使得连接构件层的一部分保留在腔体中。
该方法还可包括:在第一绝缘层上形成具有接触开口的第二绝缘层。棒型LED的第二端部和第二电极可在接触开口处彼此电连接。
附图说明
现在,将在下文中参照附图更充分地描述本公开的示例性实施方式;然而,本公开可以以不同的形式来实施并且不应解释为局限于本文阐述的示例性实施方式。更确切地,这些实施方式被提供以使得本公开将是透彻和完整的,并且将向本领域技术人员充分地传达本公开的范围。
在附图中,为了使例示清楚,尺寸可能被放大。在说明书全文中,相同的附图标记表示相同的元件。
图1是示出根据本公开实施方式的棒型LED的立体图。
图2是示出根据本公开实施方式的发光设备的结构图。
图3A至图3E是示出根据本公开实施方式的无源发光显示面板中的发光设备的单元区域的电路图。
图4A至图4C是示出根据本公开实施方式的有源发光显示面板中的发光设备的单元区域的电路图。
图5A是示出根据本公开实施方式的发光设备的独立像素区域的平面图。
图5B是沿着图5A的线I-I′截取的剖视图。
图6和图7是示出根据本公开其它实施方式的发光设备的像素区域的平面图。
图8A至图8K是依次示出根据本公开实施方式的发光设备的制造方法的剖视图。
具体实施方式
本公开可包括各种改变和不同形状;因此,本文仅描述示例性实施方式。然而,这些示例性实施方式不限制本公开,并且覆盖在本公开的范围内的所有改变和等同材料及替换。
应理解,虽然本文可使用术语“第一”、“第二”等来描述各种元件,但是这些元件不应受这些术语限制。这些术语仅用于将一个元件与另一元件区分开。因此,在不背离本公开的情况下,下面讨论的“第一”元件也可称为“第二”元件。如本文所使用的那样,除非上下文清楚地另行指出,否则单数形式旨在也包括复数形式。
还应理解,术语“包括(comprises)”、“包括(comprising)”、“包括(includes)”、“包括(including)”和/或“具有(having)”及其变型当在本说明书中使用时指出所阐述的特征、整体、步骤、操作、元件和/或组件的存在,但是不排除一个或多个其它的特征、整体、步骤、操作、元件、组件和/或其组合的存在和/或添加。此外,诸如层、区域、衬底或板的元件放置在另一元件“上”或“上方”的表述不仅指元件“直接”放置在该另一元件“上”或放置在该另一元件“正上方”的情况,还指该元件和该另一元件之间插置有又一元件的情况。诸如层、区域、衬底或板的元件放置在另一元件“下面”或“下方”的表述不仅指元件“直接”放置在该另一元件“下面”或者放置在该另一元件“正下方”的情况,还指该元件和该另一元件之间插置有又一元件的情况。
应理解,当元件或层被称为在另一元件或层“上”、“连接至”或“联接至”另一元件或层时,它可直接在所述另一元件或层上、连接或联接至所述另一元件或层,或者还可存在一个或多个介于中间的元件或层。当元件或层被称为“直接在”另一元件或层“上”、“直接连接至”或“直接联接至”另一元件或层时,不存在介于中间的元件或层。例如,当第一元件被描述为“联接”或“连接”至第二元件时,第一元件可直接联接或连接至第二元件,或者第一元件可经由一个或多个介于中间的元件间接地联接或连接至第二元件。在下文中,将参照附图详细描述本公开的示例性实施方式。
如本文所使用的那样,术语“和/或”包括相关所列项目中的一个或多个的任何和全部组合。此外,当描述本发明的实施方式时,“可”的使用涉及“本发明的一个或多个实施方式”。诸如“中至少之一”的表述在处于元件列表之后时修饰整个元件列表,而不是修饰列表中的个别元件。另外,术语“示例性”旨在表示示例或例示。如本文所使用的,可认为术语“使用(use)”、“使用(using)”和“使用(used)”分别与术语“利用(utilize)”、“利用(utilizing)”和“利用(utilized)”同义。
根据本公开实施方式,提供了包括棒型LED LD的发光设备。将首先描述棒型LEDLD,并且之后将描述包括棒型LED LD的发光设备。
图1是示出根据本公开实施方式的棒型LED LD的立体图。图1中示出圆柱形的棒型LED LD,但是本公开不限于此。
参考图1,根据本公开实施方式的棒型LED LD包括第一导电半导体层11和第二导电半导体层13以及插置于第一导电半导体层11和第二导电半导体层13之间的有源层12。例如,棒型LED LD可具有这样的堆叠结构,在该堆叠结构中第一导电半导体层11、有源层12和第二导电半导体层13相继地堆叠。在一些实施方式中,棒型LED LD还可包括绝缘膜14。棒型LED LD还可包括第一电极和第二电极。
在本公开的实施方式中,棒型LED LD具有在一个方向上延伸的棒形状。当假设棒型LED LD的延伸方向是长度方向时,棒型LED LD沿着长度方向具有第一端部和第二端部。在本公开的实施方式中,第一导电半导体层11和第二导电半导体层13中的一个设置在第一端部处,且第一导电半导体层11和第二导电半导体层13中的另一个设置在第二端部处。
在一些实施方式中,棒型LED LD可具有如图1中所示的圆柱形形状,但是棒型LEDLD的形状不限于此。这里,术语“棒型”包括在其长度方向长(例如,具有大于约1的纵横比)的杆状形状或棒状形状,诸如圆柱形柱或多边形柱。例如,棒型LED LD可具有大于其直径的长度。
棒型LED LD可制造成足够小以具有以微米级或纳米级测量的直径和/或长度。然而,棒型LED LD的尺寸不限于此。例如,棒型LED LD的尺寸可修改成与棒型LED LD所要应用到的发光设备的条件对应。
第一导电半导体层11可包括例如n型半导体层。例如,第一导电半导体层11可包括铟铝镓氮化物(InAlGaN)、镓的氮化物(GaN)、铝镓氮化物(AlGaN)、铟镓氮化物(InGaN)、铝的氮化物(AlN)以及铟的氮化物(InN)之中的至少一种半导体材料,并且可包括掺杂有诸如硅(Si)、锗(Ge)或锡(Sn)的第一导电掺杂剂的半导体层。然而,第一导电半导体层11不限于此,并且第一导电半导体层11可包括各种合适的材料。
有源层12形成在第一导电半导体层11上并且可具有单个或多个量子阱结构。在一些实施方式中,掺杂有导电掺杂剂的镀层可形成在有源层12的顶部和/或底部上(例如,相对端上)。例如,镀层可实现为AlGaN层或InAlGaN层。此外,有源层12可包括诸如AlGaN或铟镓铝氮化物(InGaAlN)的材料(或可由其制成)。当具有阈值电压或更大电压(例如,预定电压或更大电压)的电场施加至棒型LED LD的两端时,电子-空穴对在有源层12中结合使得棒型LED LD发射光。
第二导电半导体层13形成在有源层12上并且可包括类型与第一导电半导体层11的类型不同的半导体层。作为示例,第二导电半导体层13可包括p型半导体层。例如,第二导电半导体层13可包括InGaAlN、GaN、AlGaN、InGaN、AlN和铟的氮化物(InN)中的至少一种半导体材料,并且可包括掺杂有诸如镁(Mg)的第二导电掺杂剂的半导体层。然而,第二导电半导体层13不限于此,并且第二导电半导体层13可包括各种合适的材料。
在一些实施方式中,棒型LED LD还可包括绝缘膜14,但是本公开不限于此。在一些实施方式中,可省略绝缘膜14。
在一些实施方式中,绝缘膜14可设置成覆盖第一导电半导体层11、有源层12和第二导电半导体层13的至少一个区域。例如,绝缘膜14可设置在棒型LED LD的除了端部部分之外的部分处使得棒型LED LD的端部部分暴露。另外,在一些实施方式中,绝缘膜14可暴露第一导电半导体层11和/或第二导电半导体层13的侧表面的至少一个区域。
绝缘膜14可形成为围绕第一导电半导体层11、有源层12和/或第二导电半导体层13的外周边表面(例如,外圆周表面)的至少一部分。作为示例,绝缘膜14可形成为至少围绕有源层12的外周边表面。在一些实施方式中,绝缘膜14可由透明绝缘材料形成。例如,绝缘膜14可包括从由硅的氧化物(例如,SiO2)、硅的氮化物(例如,Si3N4)、铝的氧化物(例如,Al2O3)以及钛的氧化物(例如,TiO2)构成的群组中选择的至少一种绝缘材料。然而,本公开不限于此,并且可使用具有绝缘性质的各种合适的材料。
上述棒型LED LD可用作用于各种发光设备的发光源。作为示例,棒型LED LD可用作用于照明设备或自发光显示面板的发光源。
图2是示出根据本公开实施方式的发光设备的结构图。在图2中,示出了发光显示设备作为利用棒型LED LD的发光设备的示例,但是根据本公开的发光设备不限于图2中所示的发光显示设备。作为示例,根据本公开的发光设备可以是另一类型的发光设备,诸如照明设备。
参考图2,根据本公开实施方式的发光设备包括时序控制器110、扫描驱动器120、数据驱动器130和发光单元140。当发光设备是发光显示设备时,如在所示的实施方式中那样,发光单元140可以是显示面板的像素区域。
时序控制器110从外部(例如,从用于传输图像数据的系统)接收驱动发光单元140的各种控制信号和图像数据。时序控制器110重新排列所接收的图像数据并且将经重新排列的图像数据传输至数据驱动器130。另外,时序控制器110生成用于驱动相应的扫描驱动器120和数据驱动器130的扫描控制信号和数据控制信号,并且将所生成的扫描控制信号和数据控制信号传输至相应的扫描驱动器120和数据驱动器130。
扫描驱动器120接收从时序控制器110供应的扫描控制信号,并且生成与扫描控制信号对应的扫描信号。由扫描驱动器120生成的扫描信号通过扫描线S1至Sn供应至单元区域(例如,像素或像素区域)142。
数据驱动器130接收从时序控制器110供应的数据控制信号和图像数据,并且生成与数据控制信号和图像数据对应的数据信号。由数据驱动器130生成的数据信号输出至数据线D1至Dm。输出至数据线D1至Dm的数据信号输入至水平像素线上的通过扫描信号选择的像素142。
发光单元140可包括连接至扫描线S1至Sn和数据线D1至Dm的多个像素142。在一些实施方式中,像素142中的每一个可包括一个或多个图1中所示的棒型LED LD。当从扫描线S1至Sn供应扫描信号时,像素142选择性地发射与从数据线D1至Dm输入的数据信号对应的光。作为示例,像素142中的每一个可在每个帧周期期间发射具有与所输入的数据信号对应的亮度的光。供应有与黑色亮度对应的数据信号的像素142在相应的帧周期期间不发射光,从而提供黑色。当发光单元140是有源发光显示面板的像素单元时,发光单元140可通过进一步供应有第一像素电源和第二像素电源以及扫描信号和数据信号而被驱动。
图3A至图3E是示出根据本公开实施方式的发光设备的单元区域的电路图并且示出无源发光显示面板的像素的示例。为了方便,图3A至图3E中示出第i(i是自然数)水平像素线上的第j(j是自然数)像素。作为与图3A至图3E中所示的像素相关的非限制性示例,像素可为红色像素、绿色像素、蓝色像素和白色像素之一。
参考图3A,像素142包括连接在扫描线Si和数据线Dj之间的棒型LED LD。在一些实施方式中,棒型LED LD的第一电极(例如,阳电极)可连接至扫描线Si,且棒型LED LD的第二电极(例如,阴电极)可连接至数据线Dj。当等于或大于阈值电压的电压施加在第一电极和第二电极之间时,棒型LED LD发射具有与所施加的电压的大小对应的亮度的光。例如,像素142的光发射可通过调整施加至扫描线Si的扫描信号和/或施加至数据线Dj的数据信号的电压来控制。
参考图3B,像素142可包括并联地连接的多个棒型LED LD。在该实施方式中,像素142的亮度可与像素142中的多个棒型LED LD的亮度的总和对应。当像素142包括多个棒型LED LD(包括较多数量的棒型LED LD)时,虽然在棒型LED LD中的一些之中发生缺陷,但是该缺陷本身可不造成像素142的缺陷(例如,可不造成明显的缺陷)。
参考图3C,设置在像素142中的棒型LED LD的连接方向可改变。作为示例,棒型LEDLD的第一电极(例如,阳电极)可连接至数据线Dj,且棒型LED LD的第二电极(例如,阴电极)可连接至扫描线Si。在图3A中所示的实施方式中施加在扫描线Si和数据线Dj之间的电压的方向和在图3C中所示的实施方式中施加在扫描线Si和数据线Dj之间的电压的方向可彼此相反。
参考图3D,像素142还可包括并联地连接的多个棒型LED LD。
参考图3E,像素142可包括在不同方向上连接的多个棒型LED LD。作为示例,像素142可包括具有连接至扫描线Si的第一电极(例如,阳电极)和连接至数据线Dj的第二电极(例如,阴电极)的棒型LED LD,以及包括具有连接至数据线Dj的第一电极(例如,阳电极)和连接至扫描线Si的第二电极(例如,阴电极)的另一棒型LED LD。
图3E中所示的像素142可以是直流(DC)驱动或交流(AC)驱动的(例如,可由AC电流或DC电流驱动)。当图3E中所示的像素142是DC驱动的时,正向连接的棒型LED LD可发射光,并且反向连接的LED LD可不发射光。当图3E中所示的像素142是AC驱动的时,正向连接的棒型LED LD可根据所施加的电压的方向发射光。例如,当图3E中所示的像素142是AC驱动的时,像素142中所包括的棒型LED LD可根据所施加的电压的方向交替地发射光。
图4A至图4C是示出根据本公开实施方式的发光设备的单元区域的电路图并且示出有源发光显示面板的像素的示例。在图4A至图4C中,与图3A至图3E中所示的组件相似的或相同的组件由相同的附图标记指示,并且可省略它们的详细描述。
参考图4A,像素142包括棒型LED LD和连接至棒型LED LD的像素电路144。
棒型LED LD的第一电极(例如,阳电极)经由像素电路144连接至第一像素电源ELVDD,且棒型LED LD的第二电极(例如,阴电极)连接至第二像素电源ELVSS。第一像素电源ELVDD和第二像素电源ELVSS可具有彼此不同的电势。作为示例,第二像素电源ELVSS可具有比第一像素电源ELVDD的电势低出棒型LED LD的阈值电压或更多的电势。每个棒型LED LD发射具有与受像素电路144控制的驱动电流对应的亮度的光。
虽然图4A中公开了像素142仅包括一个棒型LED LD的实施方式,但是本公开不限于此。例如,像素142可包括并联地连接的多个棒型LED LD。
在一些实施方式中,像素电路144可包括第一晶体管M1和第二晶体管M2以及存储电容器Cst。然而,像素电路144的结构不限于图4A中所示的实施方式。
第一晶体管(例如,开关晶体管)M1的第一电极连接至数据线Dj,且第一晶体管M1的第二电极连接至第一节点N1。这里,第一晶体管M1的第一电极和第二电极是不同的电极。例如,当第一电极是源电极时,第二电极是漏电极。此外,第一晶体管M1的栅电极连接至扫描线Si。当从扫描线Si供应具有可以导通第一晶体管M1的电压(例如,低电平导通电压)的扫描信号时,第一晶体管M1导通以允许数据线Dj和第一节点N1电连接至彼此。此时,相应帧的数据信号供应至数据线Dj。因此,数据信号传递至第一节点N1。传递至第一节点N1的数据信号在存储电容器Cst中进行充电。
第二晶体管(例如,驱动晶体管)M2的第一电极连接至第一像素电源ELVDD,且第二晶体管M2的第二电极连接至棒型LED LD的第一电极。此外,第二晶体管M2的栅电极连接至第一节点N1。第二晶体管M2与第一节点N1处的电压对应地控制供应至棒型LED LD的驱动电流的量。
存储电容器Cst的一个电极连接至第一像素电源ELVDD,且存储电容器Cst的另一电极连接至第一节点N1。存储电容器Cst以与供应至第一节点N1的数据信号对应的电压进行充电,并且保持所充的电压直到下一帧的数据信号被供应为止。
为了方便,图4A中示出具有较简单的结构的像素电路144,像素电路144包括用于将数据信号传递至像素142的内部的第一晶体管M1、用于存储数据信号的存储电容器Cst以及用于将与数据信号对应的驱动电流供应至棒型LED LD的第二晶体管M2。然而,本公开不限于此,且像素电路144的结构可进行各种适当修改并实施。作为示例,像素电路144还可包括其它电路元件,诸如用于补偿第二晶体管M2的阈值电压的晶体管元件、用于初始化第一节点N1的电压或施加至棒型LED LD的一个电极的电压的晶体管元件、用于控制发光周期的晶体管元件和/或用于使第一节点N1处的电压升高的升压电容器。
在图4A中,像素电路144中的全部晶体管(例如,第一晶体管M1和第二晶体管M2两者)示为p型晶体管,但是本公开不限于此。例如,像素电路144中所包括的第一晶体管M1和第二晶体管M2中至少之一可以是n型晶体管。
参考图4B,第一晶体管M1和第二晶体管M2可以是n型晶体管。除了组件中的一些的连接位置由于晶体管类型的改变而改变之外,图4B中所示的像素电路144的配置或操作类似于图4A中所示的像素电路144的配置或操作。因此,将省略图4B中所示的像素电路144的更详细的描述。
参考图4C,像素142可包括在不同的方向上连接的多个棒型LED LD。在该实施方式中,像素142可以是DC驱动或AC驱动的。这已经在上文针对图3E进行描述,并且因此,将省略其更详细的描述。
图5A是示出根据本公开实施方式的发光设备的单元区域的平面图,且图5B是沿着图5A的线I-I′截取的剖视图。
图5A中所示的单元区域可以是例如其中设置有图2中所示的发光单元140的像素142之一的独立像素区域PXA。例如,根据本公开实施方式的发光设备可以是包括图5A中所示的多个独立像素区域PXA的发光显示设备,并且图2至图4C中所示的像素142之一可设置在每个像素区域PXA中。然而,本公开不限于此,且本公开可应用于其它发光设备以及发光显示设备。
为了方便,图5中示出设置五个棒型LED LD的实施方式,但是本公开不限于此。布置在像素区域PXA中的棒型LED LD的数量和排列结构可进行各种适当修改。
一个像素区域PXA的亮度可根据电连接在第一电极EL1和第二电极EL2之间的棒型LED LD的数量而变化(例如,像素区域PXA的亮度可基于设置在像素区域PXA中的有效棒型LED LD的数量而变化)。当有效棒型LED LD的数量在像素区域PXA之间显著变化时,发光设备可能呈现出整体上非均匀的亮度(或发光)特性。
因此,在本公开的实施方式中,具有开口OPN的金属构件MM(例如,腔体、凹槽或穴部)设置在第一电极EL1上,且每个棒型LED LD的一个端部位于开口OPN中使得棒型LED LD更均匀地布置(参见,例如,图5B)。根据本公开实施方式,能够提供这样的发光设备及其制造方法,其中,布置在每个像素区域PXA中的棒型LED LD的数量是均匀或基本均匀的,由此实现更均匀的亮度特性。
参考图5A和图5B,根据本公开实施方式的发光设备可包括衬底SUB、第一电极EL1、对齐线AW1和AW2、金属构件MM、第一绝缘层INS1、棒型LED LD、连接构件CM、第二绝缘层INS2和第二电极EL2。
衬底SUB可包括诸如玻璃或树脂的绝缘材料(或可由其制成)。另外,衬底SUB可包括柔性材料(或可由其制成)以是可弯曲或可折叠的,并且可具有单层结构或多层结构。
例如,衬底SUB可包括以下至少之一:聚苯乙烯、聚乙烯醇、聚甲基丙烯酸甲酯、聚醚砜、聚丙烯酸酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚芳酯、聚酰亚胺、聚碳酸酯、三醋酸纤维素以及醋酸丙酸纤维素。
衬底SUB可包括上述像素电路144的晶体管。例如,衬底SUB可以是薄膜晶体管阵列衬底。此外,第一电极EL1可电连接至晶体管的源电极/漏电极。
第一电极EL1设置在衬底SUB上。第一电极EL1可包括金属(或可由其制成)。例如,第一电极EL1可包括诸如金(Au)、银(Ag)、铝(Al)、钼(Mo)、铬(Cr)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)的金属以及这些金属的合金中的至少之一。第一电极EL1可形成为单层。然而,本公开不限于此,且第一电极EL1可形成为所述金属和所述合金之中的多种材料堆叠的多层结构。
对齐线AW1和AW2设置在第一电极EL1的侧面处(例如,在第一电极EL的两侧处)。对齐线AW1和AW2可设置在与第一电极EL1相同的层中。对齐线AW1和AW2可包括设置在第一电极EL1的一侧处的第一对齐线AW1以及设置在第一电极EL1的另一侧处的第二对齐线AW2。具有相反极性的电压分别施加至第一对齐线AW1和第二对齐线AW2,使得棒型LED LD在一个方向上偏斜并且由此对齐。
对齐线AW1和AW2可由与金属构件MM相同的材料形成。对齐线AW1和AW2可包括诸如铝(Al)或铝合金的铝基金属、诸如银(银)或银合金的银基金属、诸如铜(Cu)或铜合金的铜基金属、诸如钼(Mo)或钼合金的钼基金属、铬(Cr)、钽(Ta)和/或钛(Ti)(或可由其制成)。
金属构件MM设置在第一电极EL1上。金属构件MM具有用于容纳棒型LED LD的开口OPN。金属构件MM可通过开口OPN暴露下部的第一电极EL1。
当在剖视图(参见例如图5B)中观察开口OPN时,开口OPN具有其内部部分的宽度大于其入口(或上部分)的宽度的形状。因此,棒型LED LD可更稳定地容纳在金属构件MM中,且可防止棒型LED LD的分离。
在一些实施方式中,当在平面上观察时,如5A中所示那样,开口OPN可具有圆形的或椭圆形的形状。然而,开口OPN的形状不限于此并且可进行各种适当修改。
此外,当在平面上观察时,金属构件MM可形成为覆盖第一电极EL1,但是金属构件MM的平面尺寸和形状不受限制。
金属构件MM的厚度可小于棒型LED LD的长度以通过暴露棒型LED LD的第二端部LDb来保证发光区域。因此,金属构件MM的厚度和开口OPN的尺寸可确定成使得棒型LED LD的第一端部LDa延伸到开口OPN中并且第二端部LDb暴露于外部(例如,开口OPN的外部)。
金属构件MM包括导电金属材料(或由其形成),并且可以是有助于湿蚀刻的金属。金属构件MM中的开口OPN可利用化学溶液通过各向同性蚀刻工艺来形成。形成开口OPN的方法将在稍后进一步描述。
金属构件MM的材料可包括(或者可以是)诸如铝(Al)或铝合金的铝基金属、诸如银(Ag)或银合金的银基金属、诸如铜(Cu)或铜合金的铜基金属、诸如钼(Mo)或钼合金的钼基金属、铬(Cr)、钽(Ta)和/或钛(Ti)。当金属构件MM和对齐线AW1和AW2由相同的材料制成时,金属构件MM和对齐线AW1和AW2可并行地(或同时)形成。
第一绝缘层INS1设置在金属构件MM上方。例如,第一绝缘层INS1覆盖上面形成有第一电极EL1、对齐线AW1和AW2以及金属构件MM的衬底SUB的前表面(例如,上表面)。第一绝缘层INS1的一部分被移除使得金属构件MM中的开口OPN暴露。
第一绝缘层INS1具有相对于开口OPN倾斜的(例如,相对于衬底SUB的上表面倾斜的)倾斜表面SLP。例如,如图5B中所示,当作为截面观察时,第一绝缘层INS1的围绕开口OPN的区域可具有漏斗形状。倾斜表面SLP的倾斜角度可根据金属构件MM中的棒型LED LD的尺寸和开口OPN的结构(例如,尺寸和/或形状)不同地确定。
第一绝缘层INS1可以是包括有机材料(或由其制成)的有机绝缘层。有机材料可包括有机绝缘材料,例如基于聚丙烯酸的化合物;基于聚酰亚胺的化合物;基于氟的化合物,(特拉华州威明顿市科慕公司(Chemours Company)的注册商标);或者基于苯并环丁烯的化合物。
棒型LED LD在棒型LED LD的位于开口OPN中的第一端部LDa处电连接至第一电极EL1。棒型LED LD还电连接至设置在棒型LED LD的突出到开口OPN外部的第二端部LDb处的第二电极EL2。棒型LED LD可利用将包括多个棒型LED LD的LED溶液喷涂到上面形成有第一绝缘层INS1的衬底SUB上的方法插入开口OPN中。可在将LED溶液喷涂到待容纳棒型LED LD的第一端部LDa的位置处之前移除第一绝缘层INS1的一部分。
棒型LED LD延伸到开口OPN中并且可对齐成倾斜地倚靠在第一绝缘层INS1的倾斜表面SLP上。这里,棒型LED LD的对齐方向可通过施加至对齐线AW1和AW2的电压的极性来确定。例如,当具有正极性(+)的电压施加至第一对齐线AW1且具有负极性(-)的电压施加至第二对齐线AW2时,棒型LED LD的第一端部LDa可面对第一对齐线AW1且棒型LED LD的第二端部LDb可面对第二对齐线AW2。这里,棒型LED LD的第一端部LDa可以是阳电极,且棒型LEDLD的第二端部LDb可以是阴电极。
在图5A和图5B中,作为示例描述了一个棒型LED LD位于一个开口OPN中的实施方式。在另一实施方式中,多个棒型LED LD可插入一个开口OPN中。
连接构件CM设置在棒型LED LD的位于开口OPN中的第一端部LDa与第一电极EL1之间。连接构件CM包括导电材料(或由其形成),并且增大棒型LED LD和第一电极EL1之间的电接触区域。
另外,因为连接构件CM邻近于棒型LED LD的发光区域,所以连接构件CM可包括透明导电材料(或可由其形成)。例如,连接构件CM可包括诸如铟锡氧化物(ITO)、铟锌氧化物(IZO)或锑锌氧化物(AZO)的透明导电材料(或可由其制成)。从棒型LED LD发射的光(例如,从棒型LED LD在第一端部LDa附近的部分发射的光)可透射通过连接构件CM并且被开口OPN中的金属构件MM反射。
连接构件CM可利用以下方法来形成:在衬底SUB的前表面上以及开口OPN中沉积导电材料,并且之后湿蚀刻导电材料使得导电材料中的一些保留在开口OPN中。形成连接构件CM的方法将在稍后进一步描述。
第二绝缘层INS2设置在第一绝缘层INS1上。第二绝缘层INS2具有用于棒型LED LD的第二端部LDb和第二电极EL2之间的电连接的接触开口(例如,接触孔)CNT。在执行干蚀刻以形成接触开口CNT时,可移除棒型LED LD的第二绝缘层INS2的一部分。
第二绝缘层INS2可以是包括无机材料(或由其制成)的无机绝缘层。无机材料可包括无机绝缘材料,诸如聚硅氧烷、硅的氮化物、硅的氧化物以及硅的氮氧化物。
第二电极EL2设置在第二绝缘层INS2上。第二电极EL2通过第二绝缘层INS2中的接触开口CNT连接至棒型LED LD的第二端部LDb。第二电极EL2可包括金属(或可由其制成)。例如,第二电极EL2可包括诸如金(Au)、银(Ag)、铝(Al)、钼(Mo)、铬(Cr)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)的金属以及这些金属的合金中的至少之一(或可由其制成)。当第二电极EL2包括金属(或由其制成)时,第二电极EL2可形成为非常纤薄或者可形成为网格结构以允许光透射通过它。
图6和图7是示出根据本公开其它实施方式的发光设备的像素区域的平面图。具有与上述组件相同的附图标记的组件可参考上述的公开内容,并且可省略其重叠或重复的描述。
参考图6,根据本公开另一实施方式的发光设备的金属构件MM具有用于容纳多个棒型LED LD1至LD5的开口OPNa。当在平面上观察时,开口OPNa可具有矩形形状,以使得棒型LED LD1至LD5在一个方向上插入并且布置。
参考图7,在根据本公开另一实施方式的发光设备中,棒型LED LD1至LD5可在像素区域PXA中对齐成在彼此相反的方向上倾斜。当具有正极性(+)的电压施加至第一对齐线AW1和第三对齐线AW3且具有负极性(-)的电压施加至第二对齐线AW2时,第一棒型LED LD1和第二棒型LED LD2与第三棒型LED LD3、第四棒型LED LD4和第五棒型LED LD5可在彼此相反的方向上对齐。
如上所述,利用一个像素区域PXA中的棒型LED LD1至LD5在彼此不同的方向上对齐的交替排列对齐方法,可提高发光设备的发光均匀性。
图8A至图8K是依次示出根据本公开实施方式的发光设备的制造方法的剖视图。具有与上述组件相同的附图标记的组件可参考上述的公开内容,并且可省略其重叠或重复的描述。
参考图8A,在衬底SUB上形成第一电极EL1。第一电极EL1可通过在衬底SUB上沉积第一电极EL1的材料并且之后图案化所沉积的材料来形成。可执行光刻工艺和蚀刻工艺以图案化第一电极EL1。
参考图8B,在上面形成有第一电极EL1的衬底SUB上形成金属构件MM和对齐线AW1和AW2。在第一电极EL1上形成金属构件MM,并且在第一电极EL1的相对侧处形成(例如,分别在第一电极EL1的一侧和另一侧处形成)第一对齐线AW1和第二对齐线AW2。金属构件MM的厚度可小于棒型LED LD的长度,使得棒型LED LD的一部分(例如,仅一部分或小于全部)可容纳在金属构件MM中。
作为示例示出了由相同材料并行地(或同时)形成金属构件MM和对齐线AW1和AW2的实施方式,但是金属构件MM和对齐线AW1和AW2可通过不同的工艺由不同的材料形成。
参考图8C,在金属构件MM上方形成第一绝缘层INS1。这里,移除第一绝缘层INS1的一部分以使得金属构件MM(例如,使得金属构件MM的一部分)通过被移除的部分暴露。第一绝缘层INS1可以是包括有机材料(或由其制成)的有机绝缘层。有机材料可包括有机绝缘材料,例如基于聚丙烯酸的化合物;基于聚酰亚胺的化合物;基于氟的化合物,(特拉华州威明顿市科慕公司(Chemours Company)的注册商标);或者基于苯并环丁烯的化合物。
这里,第一绝缘层INS1可形成为具有相对于金属构件MM倾斜的倾斜表面SLP。倾斜表面SLP可通过在衬底SUB上沉积第一绝缘层INS1的材料并且之后图案化所沉积的材料来形成。可执行光刻工艺和蚀刻工艺以图案化倾斜表面SLP。
参考图8D,在形成第一绝缘层INS1之后,在暴露的金属构件MM中形成开口OPN。当观察开口OPN的截面时,开口OPN具有其内部部分的宽度大于其入口的宽度的形状。因此,容纳在金属构件MM中的棒型LED LD可不容易与金属构件MM分离。
开口OPN可利用化学溶液通过湿蚀刻工艺来形成。湿蚀刻工艺是各向同性蚀刻工艺并且可允许开口OPN具有其内部部分的宽度大于其入口的宽度的形状。
参考图8E和图8F,将棒型LED LD布置成插入开口OPN中。例如,在第一绝缘层INS1上涂覆包括多个棒型LED LD的LED溶液。在涂覆LED溶液之后或者在涂覆LED溶液时的同时或基本同时,通过向对齐线AW1和AW2施加电压而形成电场以使得随机分布的棒型LED LD自对齐。
此外,如图8E中所示,棒型LED LD可利用以下方法插入到开口OPN中:利用清洁溶液WT在一个方向上清洁上面设置有LED溶液的衬底SUB。这里,LED溶液中的多个棒型LED LD中的一些插入到开口OPN中,且所述多个棒型LED LD中的其它棒型LED LD可通过清洁工艺移除。
在另一实施方式中,可通过单独地喷涂LED溶液或与清洁溶液WT一起喷涂LED溶液来将棒型LED LD插入到开口OPN中。
因此,如图8F中所示,棒型LED LD可对齐成倾斜地倚靠到第一绝缘层INS1的倾斜表面SLP上。此外,当棒型LED LD的第一端部LDa位于开口OPN中时,棒型LED LD电连接至第一电极EL1。
参考图8G和图8H,可形成设置在棒型LED LD的位于开口OPN中的第一端部LDa与第一电极EL1之间的连接构件CM。连接构件CM包括导电材料(或由其形成),并且增大棒型LEDLD和第一电极EL1之间的电接触区域。在一些实施方式中,连接构件CM可包括诸如铟锡氧化物(ITO)、铟锌氧化物(IZO)或锑锌氧化物(AZO)的透明导电材料(或可由其制成)。
在第一绝缘层INS1上形成连接构件层CML。例如,连接构件层CML可沉积在衬底SUB的前表面上以填充到开口OPN中。之后,蚀刻连接构件层CML使得连接构件层CML的一部分保留在开口OPN中。例如,可保留(例如,可不蚀刻)连接构件层CML的位于开口OPN中的、与棒型LED LD重叠的部分。可使用湿蚀刻工艺作为连接构件层CML的蚀刻工艺。
参考图8I和图8J,在第一绝缘层INS1上形成第二绝缘层INS2。第二绝缘层INS2可以是包括无机材料(或由其制成)的无机绝缘层。无机材料可包括无机绝缘材料,诸如聚硅氧烷、硅的氮化物、硅的氧化物以及硅的氮氧化物。
在第一绝缘层INS1上沉积第二绝缘层INS2的材料。之后,在与棒型LED LD对应的位置处图案化接触开口CNT。在执行干蚀刻以形成接触开口CNT时,可移除棒型LED LD的第二绝缘层INS2的一部分。
参考图8K,在第二绝缘层INS2上形成第二电极EL2。第二电极EL2通过穿过第二绝缘层INS2的接触开口CNT电连接至棒型LED LD的第二端部LDb。
第二电极EL2可包括金属(或可由其制成)。例如,第二电极EL2可包括诸如金(Au)、银(Ag)、铝(Al)、钼(Mo)、铬(Cr)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)的金属以及这些金属的合金中的至少之一(或可由其制成)。另外,第二电极EL2可形成为单层。然而,本公开不限于此,并且第二电极EL2可形成为所述金属和所述合金中的多种材料堆叠的多层结构。
如上所述,根据本公开实施方式,具有开口OPN的金属构件MM设置在第一电极EL1上,且棒型LED LD的一个端部插入到开口OPN中使得棒型LED LD可更均匀地布置。因此,可改善发光设备的发光均匀性。
本文已经披露了本公开的示例性实施方式,并且虽然采用了特定术语,但是它们仅以一般和描述性的意义来使用和解释,而不是出于限制的目的。在一些示例中,如将对本申请的有效申请日时的本领域普通技术人员显而易见的,除非另行特别指出,否则结合特定实施方式描述的特征、特性和/或元件可单独地使用或可与结合其它实施方式描述的特征、特性和/或元件组合使用。因此,本领域技术人员应理解,在不脱离如所附权利要求及其等同中阐述的本公开的精神和范围的情况下,可对所描述的示例性实施方式进行形式和细节上的各种改变。
Claims (10)
1.发光设备,包括:
衬底;
第一电极,位于所述衬底上;
金属构件,位于所述第一电极上,所述金属构件具有腔体;
第一绝缘层,位于所述金属构件上,所述第一绝缘层穿过所述第一绝缘层来暴露所述腔体;
棒型发光二极管,具有第一端部和第二端部,所述第一端部在所述腔体中电连接至所述第一电极,所述第二端部突出到所述腔体的外部;以及
第二电极,位于所述第一绝缘层上,所述第二电极连接至所述棒型发光二极管的所述第二端部。
2.如权利要求1所述的发光设备,其中,所述腔体的内部部分的宽度大于到所述腔体的入口的宽度。
3.如权利要求1所述的发光设备,其中,所述金属构件的厚度小于所述棒型发光二极管的长度。
4.如权利要求1所述的发光设备,其中,所述金属构件中的所述腔体暴露所述第一电极。
5.如权利要求1所述的发光设备,还包括位于所述腔体中的多个棒型发光二极管。
6.如权利要求1所述的发光设备,
其中,所述第一绝缘层具有相对于所述腔体倾斜的倾斜表面,以及
其中,所述棒型发光二极管倾斜地倚靠到所述第一绝缘层的所述倾斜表面上。
7.如权利要求6所述的发光设备,
其中,一个像素区域包括多个棒型发光二极管,以及
其中,所述一个像素区域中的所述棒型发光二极管在同一方向上倾斜。
8.如权利要求6所述的发光设备,
其中,一个像素区域包括多个棒型发光二极管,以及
其中,所述一个像素区域中的所述棒型发光二极管在彼此不同的方向上倾斜。
9.如权利要求1所述的发光设备,还包括连接构件,所述连接构件位于所述第一电极和所述棒型发光二极管的位于所述腔体中的所述第一端部之间。
10.如权利要求1所述的发光设备,还包括第二绝缘层,所述第二绝缘层位于所述第一绝缘层和所述第二电极之间,
其中,所述第二绝缘层具有接触开口,所述棒型发光二极管的所述第二端部和第二电极在所述接触开口处彼此电连接。
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2019
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2020
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2021
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US20210226109A1 (en) | 2021-07-22 |
US10971667B2 (en) | 2021-04-06 |
US20200251642A1 (en) | 2020-08-06 |
US20190245126A1 (en) | 2019-08-08 |
KR102448104B1 (ko) | 2022-09-29 |
KR20190096474A (ko) | 2019-08-20 |
KR20220136309A (ko) | 2022-10-07 |
KR102510456B1 (ko) | 2023-03-20 |
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