WO2021051462A1 - 显示装置的制作方法及显示装置 - Google Patents

显示装置的制作方法及显示装置 Download PDF

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Publication number
WO2021051462A1
WO2021051462A1 PCT/CN2019/111007 CN2019111007W WO2021051462A1 WO 2021051462 A1 WO2021051462 A1 WO 2021051462A1 CN 2019111007 W CN2019111007 W CN 2019111007W WO 2021051462 A1 WO2021051462 A1 WO 2021051462A1
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WIPO (PCT)
Prior art keywords
led chip
display device
electrically connected
thin film
cover plate
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PCT/CN2019/111007
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English (en)
French (fr)
Inventor
谢华飞
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/626,307 priority Critical patent/US10964675B1/en
Publication of WO2021051462A1 publication Critical patent/WO2021051462A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to the field of display technology, in particular to a manufacturing method of a display device and a display device.
  • Flat display devices are widely used in various consumer electronics such as mobile phones, TVs, personal digital assistants, digital cameras, notebook computers, desktop computers, etc. due to their advantages of high image quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • Micro LED/Mini LED display is a display that uses a high-density, small-size LED array integrated on a substrate as display pixels to achieve image display, and is the same as a large-size outdoor LED display Like the screen, each pixel can be addressed and individually driven to light up. It can be seen as a reduced version of the outdoor LED display, reducing the pixel distance from millimeters to micrometers.
  • Micro LED/Mini LED displays are self-luminous displays like Organic Light-Emitting Diode (OLED) displays, but Micro Compared with OLED displays, LED/Mini LED displays also have the advantages of better material stability, longer life span, and no image burn-in. They are considered to be the biggest competitor of OLED displays.
  • VR Virtual Reality
  • AR Augmented Reality
  • Head-mounted display consumers who have experienced this type of product must know best that the biggest development bottleneck of head-mounted display equipment is to increase the resolution of the screen. Higher resolution can make the virtual screen closer to the real world. Of course It also has enough brightness and enough real color performance. The requirements of these parameters may be 10 times higher than that of the best display devices on the market. For example, the brightness must reach 10000nit, but only Micro LED/Mini LED displays have such potential. In addition, Micro LED/Mini LED displays can also be used in head-up displays in automobiles and other environments.
  • AR/VR display and vehicle windshield display application scenarios require the display to have high resolution and transmittance.
  • the existing Micro LED/Mini Although the LED display screen achieves 50% penetration rate by preparing metal oxide semiconductor thin film transistor devices on the glass substrate for active driving, it still cannot meet the penetration rate of more than 70% for AR/VR displays and car windshields. Demand.
  • the purpose of the present invention is to provide a manufacturing method of a display device, which can increase the resolution and transmittance of the display device and improve the display quality.
  • the purpose of the present invention is also to provide a display device that can increase the resolution and transmittance of the display device and improve the display quality.
  • the present invention provides a manufacturing method of a display device, which includes the following steps:
  • Step S1 providing a backplane, the backplane including a base substrate and a driving circuit provided on the base substrate;
  • Step S2 forming a plurality of LED chips, each LED chip including a bottom electrode and a top electrode;
  • Step S3 vertically transferring the plurality of LED chips to the backplane, and electrically connecting the bottom electrodes of the plurality of LED chips with the driving circuit;
  • Step S4 providing a cover plate, the cover plate including a main body and a grounding circuit provided on the main body;
  • Step S5 cover the cover plate to the back plate, and make the ground circuit at least face a part of the drive circuit, and the top electrode of each LED chip is electrically connected to the ground circuit;
  • Step S6 Press the cover plate so that the LED chip in the vertical state becomes an inclined state.
  • the LED chip is a Mini LED chip or a Micro LED chip.
  • the driving circuit includes a plurality of thin film transistors, a plurality of scan lines, and a plurality of data lines.
  • the plurality of thin film transistors are arranged in an array. Each scan line is electrically connected to the gate of a row of thin film transistors, and each data line is electrically connected to the gate of a row of thin film transistors.
  • the source electrode of a row of thin film transistors is electrically connected, and the bottom electrode of each LED chip is electrically connected to the drain electrode of a thin film transistor.
  • the grounding circuit includes a plurality of grounding lines, and each grounding line is directly opposite to a scanning line (22) or a data line after being covered.
  • the bottom electrode and the top electrode of the LED chip are electrically connected to the driving circuit and the ground circuit through a solder paste.
  • the present invention also provides a display device, including a back plate and a cover plate arranged oppositely, and a plurality of LED chips arranged between the back plate and the cover plate;
  • the backplane includes a base substrate and a driving circuit provided on the base substrate;
  • the cover plate includes a main body and a ground circuit provided on the main body, and the ground circuit faces at least a part of the driving circuit
  • Each LED chip includes a bottom electrode and a top electrode, the bottom electrode is electrically connected to the driving circuit, the top electrode is electrically connected to the ground circuit, and the LED chip is arranged obliquely with respect to the vertical direction.
  • the LED chip is a Mini LED chip or a Micro LED chip.
  • the driving circuit includes a plurality of thin film transistors, a plurality of scan lines, and a plurality of data lines.
  • the plurality of thin film transistors are arranged in an array. Each scan line is electrically connected to the gate of a row of thin film transistors, and each data line is electrically connected to the gate of a row of thin film transistors.
  • the source electrode of a row of thin film transistors is electrically connected, and the bottom electrode of each LED chip is electrically connected to the drain electrode of a thin film transistor.
  • the ground circuit includes a plurality of ground lines, and each ground line is opposite to a scan line or a data line.
  • the bottom electrode and the top electrode of the LED chip are electrically connected to the driving circuit and the ground circuit through a solder paste.
  • the present invention provides a method for manufacturing a display device, including the following steps: providing a backplane, the backplane including a base substrate and a driving circuit provided on the base substrate; forming a plurality of LED chips, each LED chip includes a bottom electrode and a top electrode; the plurality of LED chips are vertically transferred to the back plate, and the bottom electrodes of the plurality of LED chips and the driving circuit are electrically connected Connection; provide a cover, the cover includes a body and a ground circuit provided on the body; cover the cover to the back plate, and make the ground circuit at least directly facing the drive circuit And the top electrode of each LED chip is electrically connected to the ground circuit; pressing the cover plate makes the LED chip in a vertical state become an inclined state, and the display device can be lifted by adjusting the position of the LED chip Resolution and transmittance, improve display quality.
  • the present invention also provides a display device, which can increase the resolution and transmittance of the display device and improve the display quality.
  • FIG. 1 is a schematic diagram of step S1 of the manufacturing method of the display device of the present invention.
  • FIGS. 2 and 3 are schematic diagrams of steps S2 to S3 of the manufacturing method of the display device of the present invention.
  • step S4 is a schematic diagram of step S4 of the manufacturing method of the display device of the present invention.
  • step S5 of the manufacturing method of the display device of the present invention are schematic diagrams of step S5 of the manufacturing method of the display device of the present invention.
  • step S6 of the manufacturing method of the display device of the present invention is a schematic diagram of step S6 of the manufacturing method of the display device of the present invention and a schematic diagram of the display device of the present invention
  • FIG. 8 is a schematic diagram of a driving circuit in the display device of the present invention.
  • FIG. 9 is a schematic diagram of the ground circuit in the display device of the present invention.
  • FIG. 10 is a flowchart of a manufacturing method of the display device of the present invention.
  • the present invention provides a manufacturing method of a display device, including the following steps:
  • the backplane 10 includes a base substrate 1 and a driving circuit 2 provided on the base substrate 1.
  • the driving circuit 2 includes a plurality of thin film transistors 21, a plurality of scan lines 22, and a plurality of data lines 23.
  • the plurality of thin film transistors 21 are arranged in an array, and each scan line 22 is electrically connected.
  • the gates of a row of thin film transistors 21 are electrically connected, and each data line 23 is electrically connected to the source of a row of thin film transistors 21.
  • Step S2 as shown in FIG. 3, a plurality of LED chips 3 are formed, and each LED chip 3 includes a bottom electrode 31 and a top electrode 32 respectively.
  • the LED chip 3 is a Mini LED chip or a Micro LED chip.
  • Step S3 vertically transfer the plurality of LED chips 3 to the back plate 1, and electrically connect the bottom electrodes of the plurality of LED chips 3 with the driving circuit 2.
  • step S3 the detailed process of step S3 is: cleaning the backplane 10, applying solder paste on the drain point of each thin film transistor 21, and then vertically vacuuming the plurality of LED chips 3 A huge amount is transferred to the respective solder paste, and finally the solder paste is reflowed and solidified by high temperature to fix the LED chip 3, and the bottom electrode 31 of each LED chip 3 is electrically connected to the drain of each thin film transistor 21.
  • a cover plate 20 is provided.
  • the cover plate 20 includes a main body 4 and a ground circuit 5 provided on the main body 4.
  • Step S5. As shown in FIG. 5 and FIG. 6, the cover plate 20 is covered on the back plate 10, and the ground circuit 5 is at least facing a part of the driving circuit 2, and each LED chip The top electrode 32 of 3 is electrically connected to the ground circuit 5.
  • the ground circuit 5 includes a plurality of ground wires 51, and each ground wire 51 is directly opposite to a scan line 22 or a data line 23 after being covered.
  • alignment marks are also provided on the back plate 10 and the cover plate 20.
  • the cover plate 20 is cleaned and placed on the back plate.
  • the alignment marks on the back plate 10 and the cover plate 20 make the ground wire 51 on the cover plate 20 and the scan line 22 of the back plate 10 or
  • the data lines 23 are aligned and overlapped, thereby reducing the influence of the wiring on the transmittance of the display device.
  • the LED chips 3 standing on the back plate 10 are brought into contact with the solder paste 6 of the cover plate 20, so that the top electrode of each LED chip 3 It is electrically connected to the ground circuit 5.
  • Step S6 As shown in FIG. 7, the cover plate 20 is pressed so that the LED chip 3 in the vertical state becomes an inclined state.
  • the solder paste 6 on the back plate 10 and the cover plate 20 is slowly melted again by controlling the temperature, while the cover plate 20 is pressed to tilt the LED chip 3, and the thickness of the LED chip 3 is achieved by controlling the box thickness. Different inclination angles, so as to achieve different penetration rates to achieve the purpose of controlling transparency.
  • the LED chip 3 is placed upright and inclined, which has the advantages of simple structure, large adjustable space and high yield.
  • the grounding circuit and the driving circuit are partially overlapped to reduce the wiring and the projection area of the LED chip 3. It can significantly improve the penetration rate of the Mini LED chip or Micro LED chip display panel.
  • the pixel size can be adjusted by controlling the box thickness, which can effectively design and adjust the resolution of the display.
  • the present invention provides a display device, including a back plate 10 and a cover plate 20 disposed opposite to each other, and a plurality of LEDs disposed between the back plate 10 and the cover plate 20 Chip 3;
  • the backplane 10 includes a base substrate 1 and a driving circuit 2 provided on the base substrate 1;
  • the cover plate 20 includes a main body 4 and a grounding circuit 5 provided on the main body 4, and the grounding circuit 5 faces at least a part of the driving circuit 2
  • Each LED chip 3 includes a bottom electrode 31 and a top electrode 32 respectively.
  • the bottom electrode 31 is electrically connected to the driving circuit 2
  • the top electrode 32 is electrically connected to the ground circuit 5
  • the LED chip 3 is opposite to Tilt setting in the vertical direction.
  • the LED chip 3 is a Mini LED chip or a Micro LED chip.
  • the driving circuit 2 includes a plurality of thin film transistors 21, a plurality of scan lines 22, and a plurality of data lines 23.
  • the plurality of thin film transistors 21 are arranged in an array, and each scan line 22 is electrically connected to a row of thin film transistors.
  • the gate of 21, each data line 23 is electrically connected to the source of a row of thin film transistors, and the bottom electrode of each LED chip 3 is electrically connected to the drain of one thin film transistor 21.
  • the ground circuit 5 includes a plurality of ground lines 51, and each ground line 51 is directly opposite to a scan line 22 or a data line 23.
  • the bottom electrode and the top electrode of the LED chip 3 are electrically connected to the driving circuit 2 and the ground circuit 5 through the solder paste 6 respectively.
  • the back plate 10 and the cover plate 20 are also provided with alignment marks.
  • the alignment marks on the back plate 10 and the cover plate 20 make the ground wire 51 on the cover plate 20 and the back plate 20
  • the scan lines 22 or the data lines 23 of the board 10 are aligned and overlapped, thereby reducing the influence of the wiring on the transmittance of the display device.
  • the LED chip 3 is placed upright and inclined, which has the advantages of simple structure, large controllable space and high yield.
  • the grounding circuit and the driving circuit are partially overlapped to reduce the wiring and the projection area of the LED chip 3. , Can significantly improve the penetration rate of the Mini LED chip or Micro LED chip display panel, and at the same time realize the adjustment of the pixel size by controlling the box thickness, which can effectively design and adjust the resolution of the display.
  • the present invention provides a method for manufacturing a display device, including the following steps: providing a backplane, the backplane including a base substrate and a driving circuit provided on the base substrate; forming a plurality of LEDs Chips, each LED chip includes a bottom electrode and a top electrode; the plurality of LED chips are vertically transferred to the back plate, and the bottom electrodes of the plurality of LED chips are electrically connected to the driving circuit
  • a cover plate the cover plate includes a body and a ground circuit provided on the body; cover the cover plate to the back plate, and make the ground circuit at least directly facing the drive circuit
  • One part, and the top electrode of each LED chip is electrically connected to the ground circuit; pressing the cover plate makes the vertical LED chip into a tilted state.
  • the present invention also provides a display device, which can increase the resolution and transmittance of the display device and improve the display quality.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

一种显示装置的制作方法及显示装置。显示装置的制作方法包括如下步骤：提供背板（10），背板（10）包括衬底基板（1）及设于衬底基板（1）上的驱动电路（2）（S1）；形成多个LED芯片（3）（S2）；将多个LED芯片（3）竖直转移到背板（10）上，并使得多个LED芯片（3）的底电极（31）与驱动电路（2）电性连接（S3）；提供盖板（20），盖板（20）包括本体（4）及设于本体（4）上的接地电路（5）（S4）；将盖板（20）盖合至背板（10）上，并使得接地电路（5）至少正对驱动电路（2）的一部分，且各个LED芯片（3）的顶电极（32）与接地电路（5）电性连接（S5）；按压盖板（20），使得竖直状态的LED芯片（3）变为倾斜状态（S6）。通过对LED芯片（3）的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。

Description

显示装置的制作方法及显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种显示装置的制作方法及显示装置。
 背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
微发光二极管（Micro LED）/迷你发光二极管（Mini LED）显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED/Mini LED显示器和有机发光二极管（Organic Light-Emitting Diode，OLED）显示器一样属于自发光显示器，但Micro LED/Mini LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
虚拟现实（Virtual Reality，VR）/增强现实（Augmented Reality，AR）头戴显示体验过这类产品的消费者肯定最清楚，头显设备最大的发展瓶颈，就是提高屏幕的分辨率，更高的分辨率能让虚拟画面更接近于真实世界，当然还要有足够的亮度、足够真实的色彩表现。这些参数的要求，比市面上最好的显示装置可能还要高上10倍，比如亮度要达到10000nit，而只有Micro LED/Mini LED显示器才有如此潜力。另外Micro LED/Mini LED显示器也可以应用于汽车和其他环境中的平视显示器中。
AR/VR显示和车载挡风玻璃的显示应用场景要求显示屏具有高的分辨率和穿透率，现有Micro LED/Mini LED显示屏虽然通过在玻璃基板上制备金属氧化物半导体薄膜晶体管器件进行有源驱动实现50%的穿透率，但仍不能满足AR/VR显示和汽车挡风玻璃达到70%以上的穿透率的需求。
 技术问题
本发明的目的在于提供一种显示装置的制作方法，能够提升显示装置分辨率与穿透率，改善显示品质。
本发明的目的还在于提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。
 技术解决方案
为实现上述目的，本发明提供了一种显示装置的制作方法，包括如下步骤：
步骤S1、提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；
步骤S2、形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；
步骤S3、将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；
步骤S4、提供盖板，所述盖板包括本体及设于所述本体上的接地电路；
步骤S5、将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；
步骤S6、按压所述盖板，使得竖直状态的LED芯片变为倾斜状态。
所述LED芯片为Mini LED芯片或Micro LED芯片。
所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。
所述接地电路包括多条接地线，盖合后每一条接地线正对一条扫描线（22）或一条数据线。
所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。
本发明还提供一种显示装置，包括相对设置的背板与盖板以及设于所述背板与盖板之间的多个LED芯片；
所述背板包括衬底基板及设于所述衬底基板上的驱动电路；
所述盖板包括本体及设于所述本体上的接地电路，且所述接地电路至少正对所述驱动电路的一部分
每一个LED芯片分别包括一底电极及一顶电极，所述底电极电性连接所述驱动电路，所述顶电极电性连接接地电路，所述LED芯片相对于竖直方向倾斜设置。
所述LED芯片为Mini LED芯片或Micro LED芯片。
所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。
所述接地电路包括多条接地线，每一条接地线正对一条扫描线或一条数据线。
所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。
 有益效果
本发明的有益效果：本发明提供了一种显示装置的制作方法，包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。本发明还提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的显示装置的制作方法的步骤S1的示意图；
图2及图3为本发明的显示装置的制作方法的步骤S2至步骤S3的示意图；
图4为本发明的显示装置的制作方法的步骤S4的示意图；
图5及图6为本发明的显示装置的制作方法的步骤S5的示意图；
图7为本发明的显示装置的制作方法的步骤S6的示意图暨本发明的显示装置的示意图；
图8为本发明的显示装置中驱动电路的示意图；
图9为本发明的显示装置中接地电路的示意图；
图10为本发明的显示装置的制作方法的流程图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图10，本发明提供一种显示装置的制作方法，包括如下步骤：
步骤S1、如图1所示，提供背板10，所述背板10包括衬底基板1及设于所述衬底基板1上的驱动电路2。
具体地，如图8所示，所述驱动电路2包括多个薄膜晶体管21、多条扫描线22及多条数据线23，所述多个薄膜晶体管21阵列排布，每一条扫描线22电性连接一行薄膜薄膜晶体管21的栅极，每一条数据线23电性连接一列薄膜晶体管21的源极。
步骤S2、如图3所示，形成多个LED芯片3，每一个LED芯片3分别包括一底电极31及一顶电极32。
具体地，所述LED芯片3为Mini LED芯片或Micro LED芯片。
步骤S3、如图3所示，将所述多个LED芯片3竖直转移到所述背板1上，并使得所述多个LED芯片3的底电极与驱动电路2电性连接。
具体地，结合图2，所述步骤S3的详细过程为：对所述背板10进行清洗，在各个薄膜晶体管21的漏极点上锡膏，接着通过真空吸附将所述多个LED芯片3竖直巨量转移到所述各个锡膏上，最后利用高温使得锡膏回流固化固住所述LED芯片3，并使得各个LED芯片3的底电极31与各个薄膜晶体管21的漏极电性连接。
步骤S4、如图4所示，提供盖板20，所述盖板20包括本体4及设于所述本体4上的接地电路5。
步骤S5、如图5及图6所示，将所述盖板20盖合至所述背板10上，并使得所述接地电路5至少正对所述驱动电路2的一部分，且各个LED芯片3的顶电极32与所述接地电路5电性连接。
具体地，如图9所示，所述接地电路5包括多条接地线51，盖合后每一条接地线51正对一条扫描线22或一条数据线23。
进一步地，为了保证对位准确，所述背板10及盖板20上还设有对位标记。
具体地，所述步骤S5中盖板20清洗后放置到背板上面，通过背板10及盖板20上的对位标记使盖板20上的接地线51与背板10的扫描线22或数据线23对位重叠，从而减少走线对显示装置的穿透率的影响，同时使背板10上站立的LED芯片3接触到盖板20的锡膏6，使得各个LED芯片3的顶电极与所述接地电路5电性连接。
步骤S6、如图7所示，按压所述盖板20，使得竖直状态的LED芯片3变为倾斜状态。
详细地，所述步骤S6中，通过控制温度使背板10和盖板20上的锡膏6缓慢再次融化，同时按压盖板20使LED芯片3发生倾斜，通过控制盒厚实现LED芯片3的不同倾斜角度，从而实现不同的穿透率达到控制透明度的目的。
从而，本发明设置LED芯片3直立倾斜摆放，具有结构简单，可调控空间大以及良率高的优点，同时设置接地电路与驱动电路部分重叠，以减少走线和LED芯片3的投影面积，可显著提高Mini LED芯片或Micro LED芯片显示面板的穿透率，同时通过控制盒厚实现像素大小的调控，可以有效设计和调节显示屏的分辨率。
请参阅图7，并结合图8和图9，本发明提供一种显示装置，包括相对设置的背板10与盖板20以及设于所述背板10与盖板20之间的多个LED芯片3；
所述背板10包括衬底基板1及设于所述衬底基板1上的驱动电路2；
所述盖板20包括本体4及设于所述本体4上的接地电路5，且所述接地电路5至少正对所述驱动电路2的一部分
每一个LED芯片3分别包括一底电极31及一顶电极32，所述底电极31电性连接所述驱动电路2，所述顶电极32电性连接接地电路5，所述LED芯片3相对于竖直方向倾斜设置。
具体地，所述LED芯片3为Mini LED芯片或Micro LED芯片。
具体地，所述驱动电路2包括多个薄膜晶体管21、多条扫描线22及多条数据线23，所述多个薄膜晶体管21阵列排布，每一条扫描线22电性连接一行薄膜薄膜晶体管21的栅极，每一条数据线23电性连接一列薄膜晶体管的源极，每一个LED芯片3的底电极电性连接一个薄膜晶体管21的漏极。
具体地，所述接地电路5包括多条接地线51，每一条接地线51正对一条扫描线22或一条数据线23。
具体地，所述LED芯片3的底电极和顶电极通过锡膏6分别与所述驱动电路2及接地电路5电性连接。
进一步地，为了保证对位准确，所述背板10及盖板20上还设有对位标记，通过背板10及盖板20上的对位标记使盖板20上的接地线51与背板10的扫描线22或数据线23对位重叠，从而减少走线对显示装置的穿透率的影响。
具体地，本发明设置LED芯片3直立倾斜摆放，具有结构简单，可调控空间大以及良率高的优点，同时设置接地电路与驱动电路部分重叠，以减少走线和LED芯片3的投影面积，可显著提高Mini LED芯片或Micro LED芯片显示面板的穿透率，同时通过控制盒厚实现像素大小的调控，可以有效设计和调节显示屏的分辨率。
综上所述，本发明提供了一种显示装置的制作方法，包括如下步骤：提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；提供盖板，所述盖板包括本体及设于所述本体上的接地电路；将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；按压所述盖板，使得竖直状态的LED芯片变为倾斜状态，通过对LED芯片的位置的调整，能够提升显示装置分辨率与穿透率，改善显示品质。本发明还提供一种显示装置，能够提升显示装置分辨率与穿透率，改善显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种显示装置的制作方法，包括如下步骤：
    步骤S1、提供背板，所述背板包括衬底基板及设于所述衬底基板上的驱动电路；
    步骤S2、形成多个LED芯片，每一个LED芯片分别包括一底电极及一顶电极；
    步骤S3、将所述多个LED芯片竖直转移到所述背板上，并使得所述多个LED芯片的底电极与驱动电路电性连接；
    步骤S4、提供盖板，所述盖板包括本体及设于所述本体上的接地电路；
    步骤S5、将所述盖板盖合至所述背板上，并使得所述接地电路至少正对所述驱动电路的一部分，且各个LED芯片的顶电极与所述接地电路电性连接；
    步骤S6、按压所述盖板，使得竖直状态的LED芯片变为倾斜状态。
  2. 如权利要求1所述的显示装置的制作方法，其中，所述LED芯片为Mini LED芯片或Micro LED芯片。
  3. 如权利要求1所述的显示装置的制作方法，其中，所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。
  4. 如权利要求3所述的显示装置的制作方法，其中，所述接地电路包括多条接地线，盖合后每一条接地线正对一条扫描线或一条数据线。
  5. 如权利要求1所述的显示装置的制作方法，其中，所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。
  6. 一种显示装置，包括相对设置的背板与盖板以及设于所述背板与盖板之间的多个LED芯片；
    所述背板包括衬底基板及设于所述衬底基板上的驱动电路；
    所述盖板包括本体及设于所述本体上的接地电路，且所述接地电路至少正对所述驱动电路的一部分；
    每一个LED芯片分别包括一底电极及一顶电极，所述底电极电性连接所述驱动电路，所述顶电极电性连接接地电路，所述LED芯片相对于竖直方向倾斜设置。
  7. 如权利要求6所述的显示装置，其中，所述LED芯片为Mini LED芯片或Micro LED芯片。
  8. 如权利要求6所述的显示装置，其中，所述驱动电路包括多个薄膜晶体管、多条扫描线及多条数据线，所述多个薄膜晶体管阵列排布，每一条扫描线电性连接一行薄膜薄膜晶体管的栅极，每一条数据线电性连接一列薄膜晶体管的源极，每一个LED芯片的底电极电性连接一个薄膜晶体管的漏极。
  9. 如权利要求8所述的显示装置，其中，所述接地电路包括多条接地线，每一条接地线正对一条扫描线或一条数据线。
  10. 如权利要求6所述的显示装置，其中，所述LED芯片的底电极和顶电极通过锡膏分别与所述驱动电路及接地电路电性连接。
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