WO2018223493A1 - Amoled显示面板结构 - Google Patents

Amoled显示面板结构 Download PDF

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Publication number
WO2018223493A1
WO2018223493A1 PCT/CN2017/092867 CN2017092867W WO2018223493A1 WO 2018223493 A1 WO2018223493 A1 WO 2018223493A1 CN 2017092867 W CN2017092867 W CN 2017092867W WO 2018223493 A1 WO2018223493 A1 WO 2018223493A1
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layer
display panel
line
wire
integrated
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PCT/CN2017/092867
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English (en)
French (fr)
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韩佰祥
吴元均
吕伯彦
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深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US15/570,366 priority Critical patent/US10181505B2/en
Publication of WO2018223493A1 publication Critical patent/WO2018223493A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to the field of OLED display device technologies, and in particular, to an AMOLED display panel structure.
  • a flat panel display device such as a liquid crystal display (LCD) and an organic light emitting diode (OLED) has gradually replaced a cathode ray tube (CRT) display.
  • the OLED display panel has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, near 180° viewing angle, wide temperature range, flexible display and large-area full-color display. It is widely used in smartphones, tablets, full-color TVs, etc.
  • the OLED display panel can be divided into two types: passive matrix (PM) type and active matrix (AM) type, namely direct addressing and Thin Film Transistor (TFT) matrix searching. Two types of addresses.
  • PM passive matrix
  • AM active matrix
  • TFT Thin Film Transistor
  • FIG. 1 is a front view of a conventional AMOLED display panel
  • FIG. 2 is a schematic diagram of an internal circuit trace of a conventional AMOLED display panel.
  • the existing AMOLED display panel has a display. a region AA', and a left bezel region B1', a right bezel region B2', an upper bezel region B3', and a lower bezel region B4' surrounding the periphery of the display area AA'.
  • a plurality of scanning lines 100 extending in the lateral direction and a plurality of data lines 200 extending in the longitudinal direction and insulated from the scanning lines 100 are arranged in the display area AA'.
  • the upper bezel area B3 ′ is only used for encapsulation; in addition to the encapsulation, the left bezel area B1 ′ and the right bezel area B2 ′ are also arranged to be connected to the scan line 100 and input to the scan line 100 for scanning.
  • the lower bezel area B4' is also arranged with a plurality of column driving ICs 400 connected to the data lines 200 and inputting data signals to the data lines 200; therefore, the The widths of the left border area B1', the right border area B2', and the lower border area B4' are large.
  • the object of the present invention is to provide an AMOLED display panel structure, which can be compared with the prior art.
  • the width of the left border area and the right border area of the AMOLED display panel is reduced, so that the upper border area, the left border area, and the right border area are both ultra-narrow borders, and the three sides of the AMOLED display panel are almost borderless.
  • the present invention provides an AMOLED display panel structure including a first metal layer, a second metal layer, a third metal layer, a plurality of row driving circuits, and a plurality of column driving circuits;
  • the second metal layer includes a plurality of scan lines extending in a lateral direction
  • the third metal layer includes a plurality of data lines extending in a longitudinal direction and insulated from the scan lines, the first metal layer including the An equal number of extension lines extending in the longitudinal direction of the scan line;
  • One turn wiring is electrically connected to one scan line, one row of drive circuit is electrically connected to several transfer wires, and one column of drive circuit is electrically connected to several data lines;
  • the AMOLED display panel structure has a display area, and a left bezel area, a right bezel area, an upper bezel area, and a lower bezel area surrounding the periphery of the display area; the row driving circuit and the column driving circuit are collectively located under the The border area; the left border area, the right border area, and the upper border area are only used for encapsulation.
  • the first metal layer further includes a power line
  • the second metal layer further includes a first wire connecting the power line
  • the third metal layer further includes a second wire connecting the first wire
  • the one row of driving circuits is separately packaged in one row driving chip
  • the one column of driving circuits is separately packaged in one column driving chip.
  • the one row of driving circuits and the one column of driving circuits are integrated and packaged in one integrated driving chip.
  • a buffer layer is disposed between the scan line and the power line, and a scan line is electrically connected to the power line via the first via hole extending through the buffer layer.
  • the left frame area, the right frame area, and the upper frame area are packaged by a film.
  • the AMOLED display panel structure further includes a base substrate, a gate integrated with the scan line, a gate insulating layer, an active layer, an etch barrier layer, a source integrated with the data line, and the The data lines are located at the drain of the same layer;
  • the patch cord and the power line are disposed on the base substrate, the buffer layer covers the base substrate, the patch cord, and the power line, and the scan line and the first wire are disposed on the buffer layer.
  • the gate insulating layer covers the buffer layer, the scan line, the gate integrated with the scan line, and the first wire, the active layer is disposed on the gate insulating layer, and the etch barrier layer covers The active layer and the gate insulating layer, the data line, the source, the drain, and the second wire integrated with the data line are all disposed on the etch barrier layer;
  • the first wire contacts the power line via a second via extending through the buffer layer; the source and the drain integrated with the data line respectively pass through a third via penetrating the etch barrier layer,
  • the fourth via contacts the two sides of the active layer; the second lead contacts the first via via a fifth via extending through the etch barrier and the gate insulating layer.
  • the material of the extension cable, the power line, the scan line, the gate integrated with the scan line, the first wire, the data line, the source, the drain, and the second wire integrated with the data line are all molybdenum, titanium, aluminum a combination of one or more of copper.
  • the buffer layer, the gate insulating layer, and the material of the etch barrier layer are both silicon oxide, silicon nitride, or a combination of the two; the base substrate is a glass substrate.
  • the present invention also provides an AMOLED display panel structure, including a first metal layer, a second metal layer, a third metal layer, a plurality of row driving circuits, and a plurality of column driving circuits;
  • the second metal layer includes a plurality of scan lines extending in a lateral direction
  • the third metal layer includes a plurality of data lines extending in a longitudinal direction and insulated from the scan lines, the first metal layer including the The same number of extension lines extending in the longitudinal direction of the scan line; one turn wiring is electrically connected to one scan line, one row of drive circuits is correspondingly electrically connected to several transfer lines, and one column of drive circuits is electrically connected to several data lines;
  • the AMOLED display panel structure has a display area, and a left bezel area, a right bezel area, an upper bezel area, and a lower bezel area surrounding the periphery of the display area; the row driving circuit and the column driving circuit are collectively located under the The border area; the left border area, the right border area, and the upper border area are only used for encapsulation;
  • the first metal layer further includes a power line
  • the second metal layer further includes a first wire connecting the power line
  • the third metal layer further includes a second wire connecting the first wire
  • a buffer layer is disposed between the scan line and the conversion line, and a scan line is electrically connected to a transfer line via a first via hole penetrating the buffer layer;
  • the left frame area, the right frame area, and the upper frame area are packaged by a film;
  • the method further includes a base substrate, a gate integrated with the scan line, a gate insulating layer, an active layer, an etch barrier layer, a source integrated with the data line, and a layer located in the same layer as the data line Drain
  • the patch cord and the power line are disposed on the base substrate, the buffer layer covers the base substrate, the patch cord, and the power line, and the scan line and the first wire are disposed on the buffer layer.
  • the gate insulating layer covers the buffer layer, the scan line, the gate integrated with the scan line, and the first wire, the active layer is disposed on the gate insulating layer, and the etch barrier layer covers The active layer and the gate insulating layer, the data line, the source, the drain, and the second wire integrated with the data line are all disposed on the etch barrier layer;
  • the first wire contacts the power line via a second via extending through the buffer layer; a source and a drain integrated with the data line respectively contact both sides of the active layer via a third via hole and a fourth via hole penetrating the etch stop layer; the second wire passes through the engraving
  • the etch barrier layer contacts the first via of the gate insulating layer.
  • the present invention provides an AMOLED display panel structure, which is provided with the same number of extension wires extending in the longitudinal direction as the scan lines, and is electrically connected to a scan line extending in the lateral direction through a transfer wire, and is scanned.
  • the line is transferred to the row driving circuit, so that the row driving circuit can be disposed in the lower bezel area like the column driving circuit, so that the left bezel area, the right bezel area, and the upper bezel area can be used only for packaging, which is reduced compared with the prior art.
  • the width of the left border area and the right border area of the AMOLED display panel is such that the upper border area, the left border area, and the right border area are both ultra-narrow borders, and the three sides of the AMOLED display panel are almost borderless.
  • FIG. 1 is a front view of a conventional AMOLED display panel
  • FIG. 2 is a schematic diagram of internal circuit traces of a conventional AMOLED display panel
  • FIG. 3 is a front view of the structure of an AMOLED display panel of the present invention.
  • FIG. 4 is a schematic diagram of a first embodiment of an internal circuit trace of an AMOLED display panel structure of the present invention.
  • FIG. 5 is a schematic diagram of a second embodiment of an internal circuit trace of an AMOLED display panel structure of the present invention.
  • Figure 6 is an enlarged schematic view corresponding to H in Figure 4 or H' in Figure 5;
  • FIG. 7 is a cross-sectional view showing the structure of an AMOLED display panel of the present invention.
  • the present invention provides an AMOLED display panel structure including a first metal layer M1.
  • the second metal layer M2 includes a plurality of scan lines 11 extending in a lateral direction
  • the layer M3 includes a plurality of data lines 21 extending in the longitudinal direction and insulated from the scanning lines 11
  • the first metal layer M1 includes the same number of extension wires 31 extending in the longitudinal direction as the scanning lines 11.
  • a turn-over wire 31 is electrically connected to a scan line 11
  • a row of drive circuits 91 is electrically connected to a plurality of switch wires 31
  • a row of drive circuits 92 is electrically connected to the plurality of data lines 21.
  • the AMOLED display panel structure has a display area AA, and a left bezel area B1, a right bezel area B2, an upper bezel area B3, and a lower bezel area B4 surrounding the periphery of the display area AA.
  • the row driving circuit 91 and the column driving circuit 92 are co-located in the lower bezel area B4.
  • the row driving circuit 91 inputs a scan signal to the conversion wire 31, and the conversion wire 31 transmits and transfers the scan signal to the scan line 11;
  • the column drive circuit 92 inputs a data signal to the data line 21;
  • the AMOLED display panel is displayed under the control of the scanning signal and the data signal.
  • the row driving circuit is disposed in the left frame area and the right frame area of the AMOLED display panel.
  • the AMOLED display panel structure of the present invention is provided with the same number of extension lines 31 extending in the longitudinal direction as the scanning line 11 through one turn.
  • the wiring 31 is electrically connected to a scanning line 11 extending in the lateral direction, and the scanning line 11 is transferred to the row driving circuit 91 to enable the row driving circuit 91 and the column driving circuit without occupying the layout space of the original wiring.
  • the 92 is disposed in the lower frame area B4, so that the left frame area B1, the right frame area B2, and the upper frame area B3 can be used only for packaging, which reduces the left frame area and the right frame area of the AMOLED display panel compared with the prior art.
  • the width is such that the upper frame area B3, the left border area B1, and the right border area B2 are both ultra-narrow borders, and the three sides of the AMOLED display panel are almost borderless.
  • left bezel area B1, the right bezel area B2, and the upper bezel area B3 are packaged by a film to ensure that the widths of the left bezel area B1, the right bezel area B2, and the upper bezel area B3 are sufficiently narrow.
  • the row driving circuit 91 is separately packaged in a row driving chip IC1, and the column driving circuit 92 is separately packaged in one column driving chip IC2;
  • the row of driving circuits 91 and the column of driving circuits 92 are integrated and packaged in one integrated driving chip IC3.
  • the scan line 11 and the extension line 31 may be, but are not limited to, different layers as shown in FIG. 7.
  • a buffer layer 4 and a scan line 11 are disposed between the scan line 11 and the extension line 31.
  • a turn-over wire 31 is electrically connected via the first via hole 41 penetrating the buffer layer 4 .
  • the first metal layer M1 further includes a power line 32
  • the second metal layer M2 further includes a first wire 12 connected to the power line 32
  • the third metal layer M3 further includes a connection A second wire 23 of a wire 12.
  • the present invention can provide a power line 32 in the first metal layer M1 for laying physical lines such as VDD and VSS, thereby saving pixel layout space.
  • the AMOLED display panel further includes a base substrate 5, a gate integrated with the scan line 11, a gate insulating layer 6, an active layer 7, an etch stop layer 8, a source integrated with the data line 21, and a
  • the data line 21 is located at the drain 22 of the same layer.
  • the power line 32 and the power line 32 are disposed on the base substrate 5, the buffer layer 4 covers the base substrate 5, the power line 31, and the power line 32, the scan line 11 and the first wire 12 is disposed on the buffer layer 4, the gate insulating layer 6 covers the buffer layer 4, the scan line 11, the gate integrated with the scan line 11, and the first wire 12, and the active layer 7 is provided On the gate insulating layer 6, the etch stop layer 8 covers the active layer 7 and the gate insulating layer 6, the data line 21, and the source and drain integrated with the data line 21. 22.
  • the second wire 23 is disposed on the etch stop layer 8.
  • the first wire 12 contacts the power line 32 via a second via 42 extending through the buffer layer 4; the source integrated with the data line 21 and the drain 22 respectively pass through the etch barrier
  • the third via 81 and the fourth via 82 of the 8 contact the two sides of the active layer 7; the second via 23 passes through the fifth via of the etch barrier 8 and the gate insulating layer 6 68 contacts the first wire 12.
  • the gate integrated with the scan line 11, the gate insulating layer 6, the active layer 7, the etch stop layer 8, the source integrated with the data line 21, and the drain 22 constitute an etch stop (ESL) Type TFT.
  • ESL etch stop
  • the TFT may also adopt other types of TFT structures commonly used in the prior art, which does not affect the implementation of the present invention.
  • the base substrate 5 is preferably a glass substrate; the patch cord 31, the power line 32, the scan line 11, the gate integrated with the scan line 11, the first wire 12, the data line 21, and the data line 21
  • the material of the integrated source, the drain 22, and the second wire 23 is a laminated combination of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al), and copper (Cu);
  • the material of the buffer layer 4, the gate insulating layer 6, and the etch barrier layer 8 are both silicon oxide (SiOx), silicon nitride (SiNx), or a combination of the two.
  • the AMOLED display panel structure of the present invention is particularly suitable for a high-resolution top emission type AMOLED display panel with an ultra-narrow bezel, and can also be applied to a low-resolution bottom emission type AMOLED display panel with an ultra-narrow bezel.
  • the AMOLED display panel structure of the present invention is provided with the same number of extension wires extending in the longitudinal direction as the scanning lines, and the scanning lines are electrically connected to the scanning lines extending in the lateral direction through a rotating wire.
  • the row driving circuit enables the row driving circuit to be disposed in the lower bezel area like the column driving circuit, so that the left bezel area, the right bezel area, and the upper bezel area can be used only for packaging, and the AMOLED display panel is reduced compared with the prior art.
  • the width of the left border area and the right border area is such that the upper border area, the left border area, and the right border area are both ultra-narrow borders, and the three sides of the AMOLED display panel are almost borderless.

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Abstract

一种AMOLED显示面板结构，设置有多条沿横向延伸的扫描线(11)、多条沿纵向延伸并与扫描线(11)绝缘交叉的数据线(21)、与扫描线(11)同等数目的沿纵向延伸的转接线(31)、数个电性连接转接线(31)的行驱动电路(91)、及数个电性连接数据线(21)的列驱动电路(92)；一转接线(31)对应电性连接一扫描线(11)，一行驱动电路(91)对应电性连接数条转接线(31)，一列驱动电路(92)对应电性连接数条数据线(21)；行驱动电路(91)与列驱动电路(92)共同位于下边框区(B4)内；左边框区(B1)、右边框区(B2)、与上边框区(B3)仅作封装用，能够实现AMOLED显示面板的三边均为超窄边框。

Description

AMOLED显示面板结构 技术领域
本发明涉及OLED显示器件技术领域，尤其涉及一种AMOLED显示面板结构。
背景技术
在显示技术领域，液晶显示面板(Liquid Crystal Display，LCD)与有机发光二极管显示面板(Organic Light Emitting Diode，OLED)等平板显示装置已经逐步取代阴极射线管(Cathode Ray Tube，CRT)显示器。其中，OLED显示面板具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，而被广泛地应用于智能手机、平板电脑、全彩电视等。
OLED显示面板按照驱动方式可以分为无源矩阵(Passive Matrix，PM)型和有源矩阵(Active Matrix，AM)型两大类，即直接寻址和薄膜晶体管(Thin Film Transistor，TFT)矩阵寻址两类。
图1所示为现有的AMOLED显示面板的前视示意图，图2所示为现有的AMOLED显示面板的内部电路走线示意图，结合图1与图2可知，现有的AMOLED显示面板具有显示区AA’、及围绕在所述显示区AA’外围的左边框区B1’、右边框区B2’、上边框区B3’、与下边框区B4’。
所述显示区AA’内排布有多条沿横向延伸的扫描线100、及多条沿纵向延伸并与所述扫描线100绝缘交叉的数据线200。所述上边框区B3’仅作封装用；所述左边框区B1’与右边框区B2’除了作封装用之外，还要排布数个与扫描线100连接、向扫描线100输入扫描信号的行驱动IC 300；所述下边框区B4’除了作封装用之外，还要排布数个与数据线200连接、向数据线200输入数据信号的列驱动IC 400；因此，所述左边框区B1’、右边框区B2’、及下边框区B4’的宽度较大。
随着显示技术的不断发展，用户对超窄边框显示面板的需要将变得越来越强烈，所以有必要对上述现有的AMOLED显示面板进行改善。
发明内容
本发明的目的在于提供一种AMOLED显示面板结构，相比现有技术能 够减少AMOLED显示面板的左边框区与右边框区的宽度，使得上边框区、左边框区、与右边框区均为超窄边框，达到AMOLED显示面板三边近乎无边框的状态。
为实现上述目的，本发明提供一种AMOLED显示面板结构，包括第一金属层、第二金属层、第三金属层、数个行驱动电路、及数个列驱动电路；
所述第二金属层包括多条沿横向延伸的扫描线，所述第三金属层包括多条沿纵向延伸并与所述扫描线绝缘交叉的数据线，所述第一金属层包括与所述扫描线同等数目的沿纵向延伸的转接线；
一转接线对应电性连接一扫描线，一行驱动电路对应电性连接数条转接线，一列驱动电路对应电性连接数条数据线；
所述AMOLED显示面板结构具有显示区、及围绕在所述显示区外围的左边框区、右边框区、上边框区、与下边框区；所述行驱动电路与列驱动电路共同位于所述下边框区内；所述左边框区、右边框区、与上边框区仅作封装用。
所述第一金属层还包括电源线，所述第二金属层还包括连接所述电源线的第一导线，所述第三金属层还包括连接所述第一导线的第二导线。
可选的，所述一行驱动电路单独封装在一颗行驱动芯片内，所述一列驱动电路单独封装在一颗列驱动芯片内。
可选的，所述一行驱动电路与所述一列驱动电路整合封装在一颗集成驱动芯片内。
所述扫描线与转接线之间设置有缓冲层，一扫描线经由贯穿所述缓冲层的第一过孔对应电性连接一转接线。
所述左边框区、右边框区、与上边框区采用薄膜封装。
所述AMOLED显示面板结构还包括衬底基板、与所述扫描线一体的栅极、栅极绝缘层、有源层、刻蚀阻挡层、与所述数据线一体的源极、及与所述数据线位于同一层的漏极；
所述转接线与电源线设置在所述衬底基板上，所述缓冲层覆盖所述衬底基板、转接线、与电源线，所述扫描线及第一导线设在所述缓冲层上，所述栅极绝缘层覆盖所述缓冲层、扫描线、与扫描线一体的栅极、及第一导线，所述有源层设在所述栅极绝缘层上，所述刻蚀阻挡层覆盖所述有源层与栅极绝缘层，所述数据线、与所述数据线一体的源极、漏极、及第二导线均设在所述刻蚀阻挡层上；
所述第一导线经由贯穿所述缓冲层的第二过孔接触所述电源线；所述与数据线一体的源极、及漏极分别经由贯穿所述刻蚀阻挡层的第三过孔、 第四过孔接触所述有源层的两侧；所述第二导线经由贯穿所述刻蚀阻挡层与栅极绝缘层的第五过孔接触所述第一导线。
所述转接线、电源线、扫描线、与扫描线一体的栅极、第一导线、数据线、与数据线一体的源极、漏极、及第二导线的材料均为钼、钛、铝、铜中的一种或几种的层叠组合。
所述缓冲层、栅极绝缘层、与刻蚀阻挡层的材料均为氧化硅、氮化硅、或二者的组合；所述衬底基板为玻璃基板。
本发明还提供一种AMOLED显示面板结构，包括第一金属层、第二金属层、第三金属层、数个行驱动电路、及数个列驱动电路；
所述第二金属层包括多条沿横向延伸的扫描线，所述第三金属层包括多条沿纵向延伸并与所述扫描线绝缘交叉的数据线，所述第一金属层包括与所述扫描线同等数目的沿纵向延伸的转接线；一转接线对应电性连接一扫描线，一行驱动电路对应电性连接数条转接线，一列驱动电路对应电性连接数条数据线；
所述AMOLED显示面板结构具有显示区、及围绕在所述显示区外围的左边框区、右边框区、上边框区、与下边框区；所述行驱动电路与列驱动电路共同位于所述下边框区内；所述左边框区、右边框区、与上边框区仅作封装用；
其中，所述第一金属层还包括电源线，所述第二金属层还包括连接所述电源线的第一导线，所述第三金属层还包括连接所述第一导线的第二导线；
其中，所述扫描线与转接线之间设置有缓冲层，一扫描线经由贯穿所述缓冲层的第一过孔对应电性连接一转接线；
其中，所述左边框区、右边框区、与上边框区采用薄膜封装；
还包括衬底基板、与所述扫描线一体的栅极、栅极绝缘层、有源层、刻蚀阻挡层、与所述数据线一体的源极、及与所述数据线位于同一层的漏极；
所述转接线与电源线设置在所述衬底基板上，所述缓冲层覆盖所述衬底基板、转接线、与电源线，所述扫描线及第一导线设在所述缓冲层上，所述栅极绝缘层覆盖所述缓冲层、扫描线、与扫描线一体的栅极、及第一导线，所述有源层设在所述栅极绝缘层上，所述刻蚀阻挡层覆盖所述有源层与栅极绝缘层，所述数据线、与所述数据线一体的源极、漏极、及第二导线均设在所述刻蚀阻挡层上；
所述第一导线经由贯穿所述缓冲层的第二过孔接触所述电源线；所述 与数据线一体的源极、及漏极分别经由贯穿所述刻蚀阻挡层的第三过孔、第四过孔接触所述有源层的两侧；所述第二导线经由贯穿所述刻蚀阻挡层与栅极绝缘层的第五过孔接触所述第一导线。
本发明的有益效果：本发明提供的一种AMOLED显示面板结构，设置有与扫描线同等数目的沿纵向延伸的转接线，通过一转接线对应电性连接一沿横向延伸的扫描线，将扫描线转接至行驱动电路，使行驱动电路得以与列驱动电路一样设置在下边框区内，从而左边框区、右边框区、与上边框区能够仅作封装用，相比现有技术减少了AMOLED显示面板的左边框区与右边框区的宽度，使得上边框区、左边框区、与右边框区均为超窄边框，达到AMOLED显示面板三边近乎无边框的状态。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的AMOLED显示面板的前视示意图；
图2为现有的AMOLED显示面板的内部电路走线示意图；
图3为本发明的AMOLED显示面板结构的前视示意图；
图4为本发明的AMOLED显示面板结构的内部电路走线的第一实施例的示意图；
图5为本发明的AMOLED显示面板结构的内部电路走线的第二实施例的示意图；
图6为对应于图4中H处或图5中H’处的放大示意图；
图7为本发明的AMOLED显示面板结构的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图3、图4、图6、与图7，或同时参阅图3、图5、图6、与图7，本发明提供一种AMOLED显示面板结构，包括第一金属层M1、第二金属层M2、第三金属层M3、数个行驱动电路91、及数个列驱动电路92。
所述第二金属层M2包括多条沿横向延伸的扫描线11，所述第三金属 层M3包括多条沿纵向延伸并与所述扫描线11绝缘交叉的数据线21，所述第一金属层M1包括与所述扫描线11同等数目的沿纵向延伸的转接线31。一转接线31对应电性连接一扫描线11，一行驱动电路91对应电性连接数条转接线31，一列驱动电路92对应电性连接数条数据线21。
所述AMOLED显示面板结构具有显示区AA、及围绕在所述显示区AA外围的左边框区B1、右边框区B2、上边框区B3、与下边框区B4。所述行驱动电路91与列驱动电路92共同位于所述下边框区B4内。所述行驱动电路91向所述转接线31输入扫描信号，所述转接线31再将扫描信号传输、转接至扫描线11；所述列驱动电路92向所述数据线21输入数据信号；AMOLED显示面板在扫描信号与数据信号的控制下进行显示。
相比现有技术将行驱动电路设置在AMOLED显示面板的左边框区与右边框区，本发明的AMOLED显示面板结构设置有与扫描线11同等数目的沿纵向延伸的转接线31，通过一转接线31对应电性连接一沿横向延伸的扫描线11，将扫描线11转接至行驱动电路91，在不占用原有走线布局空间的前提下，使行驱动电路91得以与列驱动电路92一样设置在下边框区B4内，从而左边框区B1、右边框区B2、与上边框区B3能够仅作封装用，相比现有技术减少了AMOLED显示面板的左边框区与右边框区的宽度，使得上边框区B3、左边框区B1、与右边框区B2均为超窄边框，达到AMOLED显示面板三边近乎无边框的状态。
进一步地，所述左边框区B1、右边框区B2、与上边框区B3采用薄膜封装，保证左边框区B1、右边框区B2、与上边框区B3的宽度足够窄。
可选地，如图4所示，所述一行驱动电路91单独封装在一颗行驱动芯片IC1内，所述一列驱动电路92单独封装在一颗列驱动芯片IC2内；也可如图5所示，所述一行驱动电路91与所述一列驱动电路92整合封装在一颗集成驱动芯片IC3内。
具体地，所述扫描线11与转接线31可以但不限于如图7所示那样分属于不同的层别，所述扫描线11与转接线31之间设置有缓冲层4，一扫描线11经由贯穿所述缓冲层4的第一过孔41对应电性连接一转接线31。
进一步地，所述第一金属层M1还包括电源线32，所述第二金属层M2还包括连接所述电源线32的第一导线12，所述第三金属层M3还包括连接所述第一导线12的第二导线23。与现有技术将电源线设置于数据线所在的金属层不同，本发明可以在所述第一金属层M1内设置电源线32，用于布局VDD、VSS等实体线路，能够节省像素布局空间。
仍以图7为例，在本发明的一优选实施例中，所述AMOLED显示面板 结构还包括衬底基板5、与所述扫描线11一体的栅极、栅极绝缘层6、有源层7、刻蚀阻挡层8、与所述数据线21一体的源极、及与所述数据线21位于同一层的漏极22。
所述转接线31与电源线32设置在所述衬底基板5上，所述缓冲层4覆盖所述衬底基板5、转接线31、与电源线32，所述扫描线11及第一导线12设在所述缓冲层4上，所述栅极绝缘层6覆盖所述缓冲层4、扫描线11、与扫描线11一体的栅极、及第一导线12，所述有源层7设在所述栅极绝缘层6上，所述刻蚀阻挡层8覆盖所述有源层7与栅极绝缘层6，所述数据线21、与所述数据线21一体的源极、漏极22、及第二导线23均设在所述刻蚀阻挡层8上。所述第一导线12经由贯穿所述缓冲层4的第二过孔42接触所述电源线32；所述与数据线21一体的源极、及漏极22分别经由贯穿所述刻蚀阻挡层8的第三过孔81、第四过孔82接触所述有源层7的两侧；所述第二导线23经由贯穿所述刻蚀阻挡层8与栅极绝缘层6的第五过孔68接触所述第一导线12。所述与扫描线11一体的栅极、栅极绝缘层6、有源层7、刻蚀阻挡层8、所述与数据线21一体的源极、及漏极22构成刻蚀阻挡(ESL)型TFT。当然，在本发明的其他实施例中，TFT也可以采用现有技术中常用的其他类型的TFT结构，这并不会影响本发明的实现。
进一步地，所述衬底基板5优选为玻璃基板；所述转接线31、电源线32、扫描线11、与扫描线11一体的栅极、第一导线12、数据线21、与数据线21一体的源极、漏极22、及第二导线23的材料均为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或几种的层叠组合；所述缓冲层4、栅极绝缘层6、与刻蚀阻挡层8的材料均为氧化硅(SiOx)、氮化硅(SiNx)、或二者的组合。
本发明的AMOLED显示面板结构尤其适用于超窄边框的高解析度顶发射型AMOLED显示面板，亦可应用于超窄边框的低解析度的底发射型AMOLED显示面板。
综上所述，本发明的AMOLED显示面板结构，设置有与扫描线同等数目的沿纵向延伸的转接线，通过一转接线对应电性连接一沿横向延伸的扫描线，将扫描线转接至行驱动电路，使行驱动电路得以与列驱动电路一样设置在下边框区内，从而左边框区、右边框区、与上边框区能够仅作封装用，相比现有技术减少了AMOLED显示面板的左边框区与右边框区的宽度，使得上边框区、左边框区、与右边框区均为超窄边框，达到AMOLED显示面板三边近乎无边框的状态。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明的权利要求的保护范围。

Claims (14)

  1. 一种AMOLED显示面板结构，包括第一金属层、第二金属层、第三金属层、数个行驱动电路、及数个列驱动电路；
    所述第二金属层包括多条沿横向延伸的扫描线，所述第三金属层包括多条沿纵向延伸并与所述扫描线绝缘交叉的数据线，所述第一金属层包括与所述扫描线同等数目的沿纵向延伸的转接线；一转接线对应电性连接一扫描线，一行驱动电路对应电性连接数条转接线，一列驱动电路对应电性连接数条数据线；
    所述AMOLED显示面板结构具有显示区、及围绕在所述显示区外围的左边框区、右边框区、上边框区、与下边框区；所述行驱动电路与列驱动电路共同位于所述下边框区内；所述左边框区、右边框区、与上边框区仅作封装用。
  2. 如权利要求1所述的AMOLED显示面板结构，其中，所述第一金属层还包括电源线，所述第二金属层还包括连接所述电源线的第一导线，所述第三金属层还包括连接所述第一导线的第二导线。
  3. 如权利要求1所述的AMOLED显示面板结构，其中，所述一行驱动电路单独封装在一颗行驱动芯片内，所述一列驱动电路单独封装在一颗列驱动芯片内。
  4. 如权利要求1所述的AMOLED显示面板结构，其中，所述一行驱动电路与所述一列驱动电路整合封装在一颗集成驱动芯片内。
  5. 如权利要求2所述的AMOLED显示面板结构，其中，所述扫描线与转接线之间设置有缓冲层，一扫描线经由贯穿所述缓冲层的第一过孔对应电性连接一转接线。
  6. 如权利要求1所述的AMOLED显示面板结构，其中，所述左边框区、右边框区、与上边框区采用薄膜封装。
  7. 如权利要求5所述的AMOLED显示面板结构，还包括衬底基板、与所述扫描线一体的栅极、栅极绝缘层、有源层、刻蚀阻挡层、与所述数据线一体的源极、及与所述数据线位于同一层的漏极；
    所述转接线与电源线设置在所述衬底基板上，所述缓冲层覆盖所述衬底基板、转接线、与电源线，所述扫描线及第一导线设在所述缓冲层上，所述栅极绝缘层覆盖所述缓冲层、扫描线、与扫描线一体的栅极、及第一导线，所述有源层设在所述栅极绝缘层上，所述刻蚀阻挡层覆盖所述有源 层与栅极绝缘层，所述数据线、与所述数据线一体的源极、漏极、及第二导线均设在所述刻蚀阻挡层上；
    所述第一导线经由贯穿所述缓冲层的第二过孔接触所述电源线；所述与数据线一体的源极、及漏极分别经由贯穿所述刻蚀阻挡层的第三过孔、第四过孔接触所述有源层的两侧；所述第二导线经由贯穿所述刻蚀阻挡层与栅极绝缘层的第五过孔接触所述第一导线。
  8. 如权利要求7所述的AMOLED显示面板结构，其中，所述转接线、电源线、扫描线、与扫描线一体的栅极、第一导线、数据线、与数据线一体的源极、漏极、及第二导线的材料均为钼、钛、铝、铜中的一种或几种的层叠组合。
  9. 如权利要求7所述的AMOLED显示面板结构，其中，所述缓冲层、栅极绝缘层、与刻蚀阻挡层的材料均为氧化硅、氮化硅、或二者的组合；所述衬底基板为玻璃基板。
  10. 一种AMOLED显示面板结构，包括第一金属层、第二金属层、第三金属层、数个行驱动电路、及数个列驱动电路；
    所述第二金属层包括多条沿横向延伸的扫描线，所述第三金属层包括多条沿纵向延伸并与所述扫描线绝缘交叉的数据线，所述第一金属层包括与所述扫描线同等数目的沿纵向延伸的转接线；一转接线对应电性连接一扫描线，一行驱动电路对应电性连接数条转接线，一列驱动电路对应电性连接数条数据线；
    所述AMOLED显示面板结构具有显示区、及围绕在所述显示区外围的左边框区、右边框区、上边框区、与下边框区；所述行驱动电路与列驱动电路共同位于所述下边框区内；所述左边框区、右边框区、与上边框区仅作封装用；
    其中，所述第一金属层还包括电源线，所述第二金属层还包括连接所述电源线的第一导线，所述第三金属层还包括连接所述第一导线的第二导线；
    其中，所述扫描线与转接线之间设置有缓冲层，一扫描线经由贯穿所述缓冲层的第一过孔对应电性连接一转接线；
    其中，所述左边框区、右边框区、与上边框区采用薄膜封装；
    还包括衬底基板、与所述扫描线一体的栅极、栅极绝缘层、有源层、刻蚀阻挡层、与所述数据线一体的源极、及与所述数据线位于同一层的漏极；
    所述转接线与电源线设置在所述衬底基板上，所述缓冲层覆盖所述衬 底基板、转接线、与电源线，所述扫描线及第一导线设在所述缓冲层上，所述栅极绝缘层覆盖所述缓冲层、扫描线、与扫描线一体的栅极、及第一导线，所述有源层设在所述栅极绝缘层上，所述刻蚀阻挡层覆盖所述有源层与栅极绝缘层，所述数据线、与所述数据线一体的源极、漏极、及第二导线均设在所述刻蚀阻挡层上；
    所述第一导线经由贯穿所述缓冲层的第二过孔接触所述电源线；所述与数据线一体的源极、及漏极分别经由贯穿所述刻蚀阻挡层的第三过孔、第四过孔接触所述有源层的两侧；所述第二导线经由贯穿所述刻蚀阻挡层与栅极绝缘层的第五过孔接触所述第一导线。
  11. 如权利要求10所述的AMOLED显示面板结构，其中，所述一行驱动电路单独封装在一颗行驱动芯片内，所述一列驱动电路单独封装在一颗列驱动芯片内。
  12. 如权利要求10所述的AMOLED显示面板结构，其中，所述一行驱动电路与所述一列驱动电路整合封装在一颗集成驱动芯片内。
  13. 如权利要求10所述的AMOLED显示面板结构，其中，所述转接线、电源线、扫描线、与扫描线一体的栅极、第一导线、数据线、与数据线一体的源极、漏极、及第二导线的材料均为钼、钛、铝、铜中的一种或几种的层叠组合。
  14. 如权利要求10所述的AMOLED显示面板结构，其中，所述缓冲层、栅极绝缘层、与刻蚀阻挡层的材料均为氧化硅、氮化硅、或二者的组合；所述衬底基板为玻璃基板。
PCT/CN2017/092867 2017-06-08 2017-07-13 Amoled显示面板结构 WO2018223493A1 (zh)

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