CN110137245A - 超结器件结构及其制备方法 - Google Patents
超结器件结构及其制备方法 Download PDFInfo
- Publication number
- CN110137245A CN110137245A CN201910364377.8A CN201910364377A CN110137245A CN 110137245 A CN110137245 A CN 110137245A CN 201910364377 A CN201910364377 A CN 201910364377A CN 110137245 A CN110137245 A CN 110137245A
- Authority
- CN
- China
- Prior art keywords
- extension lamination
- layer
- epitaxial layer
- conduction type
- super junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000003475 lamination Methods 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 224
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 238000000407 epitaxy Methods 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 9
- 230000007547 defect Effects 0.000 abstract description 23
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 5
- 238000011084 recovery Methods 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052986 germanium hydride Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910364377.8A CN110137245B (zh) | 2019-04-30 | 2019-04-30 | 超结器件结构及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910364377.8A CN110137245B (zh) | 2019-04-30 | 2019-04-30 | 超结器件结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110137245A true CN110137245A (zh) | 2019-08-16 |
CN110137245B CN110137245B (zh) | 2022-09-23 |
Family
ID=67575898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910364377.8A Active CN110137245B (zh) | 2019-04-30 | 2019-04-30 | 超结器件结构及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110137245B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114628493A (zh) * | 2021-12-22 | 2022-06-14 | 上海功成半导体科技有限公司 | 超结器件结构及其制备方法 |
CN115763521A (zh) * | 2022-11-03 | 2023-03-07 | 上海功成半导体科技有限公司 | 超结器件终端结构及其制备方法 |
CN116153967A (zh) * | 2023-02-09 | 2023-05-23 | 上海功成半导体科技有限公司 | 超结器件及其制作方法和电子器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19818298C1 (de) * | 1998-04-23 | 1999-06-24 | Siemens Ag | Superniederohmiger vertikaler MOSFET und Verfahren zu dessen Herstellung |
JP2009231622A (ja) * | 2008-03-24 | 2009-10-08 | Toshiba Corp | 半導体装置及びその製造方法 |
CN102479805A (zh) * | 2010-11-30 | 2012-05-30 | 比亚迪股份有限公司 | 一种超级结半导体元件及其制造方法 |
CN107910361A (zh) * | 2017-12-15 | 2018-04-13 | 深圳市晶特智造科技有限公司 | 半导体器件的超结结构及其制作方法 |
-
2019
- 2019-04-30 CN CN201910364377.8A patent/CN110137245B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19818298C1 (de) * | 1998-04-23 | 1999-06-24 | Siemens Ag | Superniederohmiger vertikaler MOSFET und Verfahren zu dessen Herstellung |
JP2009231622A (ja) * | 2008-03-24 | 2009-10-08 | Toshiba Corp | 半導体装置及びその製造方法 |
CN102479805A (zh) * | 2010-11-30 | 2012-05-30 | 比亚迪股份有限公司 | 一种超级结半导体元件及其制造方法 |
CN107910361A (zh) * | 2017-12-15 | 2018-04-13 | 深圳市晶特智造科技有限公司 | 半导体器件的超结结构及其制作方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114628493A (zh) * | 2021-12-22 | 2022-06-14 | 上海功成半导体科技有限公司 | 超结器件结构及其制备方法 |
CN115763521A (zh) * | 2022-11-03 | 2023-03-07 | 上海功成半导体科技有限公司 | 超结器件终端结构及其制备方法 |
CN116153967A (zh) * | 2023-02-09 | 2023-05-23 | 上海功成半导体科技有限公司 | 超结器件及其制作方法和电子器件 |
CN116153967B (zh) * | 2023-02-09 | 2023-12-22 | 上海功成半导体科技有限公司 | 超结器件及其制作方法和电子器件 |
Also Published As
Publication number | Publication date |
---|---|
CN110137245B (zh) | 2022-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110137245A (zh) | 超结器件结构及其制备方法 | |
CN104051540B (zh) | 超级结器件及其制造方法 | |
US9391137B2 (en) | Power semiconductor device and method of fabricating the same | |
CN102479805A (zh) | 一种超级结半导体元件及其制造方法 | |
CN107180765A (zh) | 形成半导体器件的方法 | |
WO2010137146A1 (ja) | ダイオードの製造方法、及び、ダイオード | |
CN107799419A (zh) | 超级结功率器件及其制备方法 | |
CN107093632A (zh) | 半导体器件和用于形成半导体器件的方法 | |
CN111863606A (zh) | 一种抗辐射功率晶体管及其制备方法 | |
US20240105783A1 (en) | Method for manufacturing a grid | |
CN110212015A (zh) | 超结器件结构及其制备方法 | |
CN110246888A (zh) | 超结器件结构及其制备方法 | |
CN110212030A (zh) | 超结器件结构及其制备方法 | |
CN210467849U (zh) | 基于平面螺型结的耐高压元件 | |
CN107887486B (zh) | 一种光电晶体管及其制作方法 | |
JP5556335B2 (ja) | 超接合半導体装置の製造方法 | |
CN110061049A (zh) | 一种低功耗屏蔽栅型半导体功率器件及其制备方法 | |
CN112310188A (zh) | 横向变掺杂终端结构及其制造方法 | |
CN111542925A (zh) | 包括堆叠的半导体芯片的cmos图像传感器和包括超晶格的读出电路系统及相关方法 | |
CN213519864U (zh) | 超级结 | |
CN114628493A (zh) | 超结器件结构及其制备方法 | |
CN110224017A (zh) | 超结器件结构及其制备方法 | |
CN107910380A (zh) | 肖特基二极管及其形成方法、半导体器件 | |
CN106033774A (zh) | 一种场效应管及其制备方法 | |
CN114628384A (zh) | 一种邻层环栅纳米线/片cmos结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Xu Dapeng Inventor after: Huang Xiaoyan Inventor after: Xue Zhongying Inventor after: Luo Jiexin Inventor after: Chai Zhan Inventor before: Xu Dapeng Inventor before: Liang Huan Inventor before: Huang Xiaoyan Inventor before: Xue Zhongying Inventor before: Luo Jiexin Inventor before: Chai Zhan |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Structure and preparation methods of superjunction devices Effective date of registration: 20231228 Granted publication date: 20220923 Pledgee: Wuding Road Sub branch of Bank of Shanghai Co.,Ltd. Pledgor: Shanghai Gongcheng Semiconductor Technology Co.,Ltd. Registration number: Y2023980075345 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |