CN110100301B - 曝光装置、衬底处理装置、衬底曝光方法及衬底处理方法 - Google Patents

曝光装置、衬底处理装置、衬底曝光方法及衬底处理方法 Download PDF

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Publication number
CN110100301B
CN110100301B CN201780077239.0A CN201780077239A CN110100301B CN 110100301 B CN110100301 B CN 110100301B CN 201780077239 A CN201780077239 A CN 201780077239A CN 110100301 B CN110100301 B CN 110100301B
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CN
China
Prior art keywords
substrate
ultraviolet rays
vacuum ultraviolet
light
unit
Prior art date
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Active
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CN201780077239.0A
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English (en)
Chinese (zh)
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CN110100301A (zh
Inventor
福本靖博
大木孝文
松尾友宏
浅井正也
春本将彦
田中裕二
中山知佐世
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201780077239.0A 2017-03-01 2017-10-04 曝光装置、衬底处理装置、衬底曝光方法及衬底处理方法 Active CN110100301B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017038236A JP6768561B2 (ja) 2017-03-01 2017-03-01 露光装置、基板処理装置、基板の露光方法および基板処理方法
JP2017-038236 2017-03-01
PCT/JP2017/036074 WO2018159005A1 (ja) 2017-03-01 2017-10-04 露光装置、基板処理装置、基板の露光方法および基板処理方法

Publications (2)

Publication Number Publication Date
CN110100301A CN110100301A (zh) 2019-08-06
CN110100301B true CN110100301B (zh) 2023-07-21

Family

ID=63370897

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CN201780077239.0A Active CN110100301B (zh) 2017-03-01 2017-10-04 曝光装置、衬底处理装置、衬底曝光方法及衬底处理方法

Country Status (5)

Country Link
JP (1) JP6768561B2 (enExample)
KR (1) KR102307596B1 (enExample)
CN (1) CN110100301B (enExample)
TW (1) TWI649642B (enExample)
WO (1) WO2018159005A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6811119B2 (ja) * 2017-03-01 2021-01-13 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法
US11968772B2 (en) * 2019-05-30 2024-04-23 Kla Corporation Optical etendue matching methods for extreme ultraviolet metrology

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124064A (en) * 1997-02-14 2000-09-26 Nikon Corporation Light exposure controlling method
US6492649B1 (en) * 1997-07-25 2002-12-10 Nikon Corporation Projection exposure apparatus, projection exposure method, optical cleaning method and method of fabricating semiconductor device
US6842500B1 (en) * 1998-09-17 2005-01-11 Nikon Corporation Exposure apparatus and exposure method using same
JP2007148360A (ja) * 2005-11-04 2007-06-14 Orc Mfg Co Ltd 周辺露光装置およびその方法
JP2013104934A (ja) * 2011-11-11 2013-05-30 Tokyo Electron Ltd 露光装置及び露光方法
TW201704888A (zh) * 2015-03-25 2017-02-01 思可林集團股份有限公司 曝光裝置及基板處理裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3378271B2 (ja) * 1992-06-11 2003-02-17 株式会社ニコン 露光方法及び装置、並びに前記方法を使用するデバイス製造方法
JPH10284407A (ja) * 1997-04-08 1998-10-23 Nikon Corp 露光装置及び露光装置を用いた半導体デバイスの製造方法
JPH11251220A (ja) * 1998-03-02 1999-09-17 Nikon Corp 露光装置及び露光方法
JP2001110710A (ja) * 1999-10-08 2001-04-20 Nikon Corp 露光装置、露光方法、および半導体デバイスの製造方法
US6211942B1 (en) * 2000-03-10 2001-04-03 Howa Machinery Ltd. Double-sided exposure system
WO2006006730A1 (ja) * 2004-07-15 2006-01-19 Nikon Corporation 平面モータ装置、ステージ装置、露光装置及びデバイスの製造方法
JP4485282B2 (ja) * 2004-08-06 2010-06-16 シャープ株式会社 露光装置、露光量制御方法、露光量制御プログラムとその記録媒体
JP4859660B2 (ja) * 2006-12-27 2012-01-25 東京応化工業株式会社 基板処置装置
JP6535197B2 (ja) * 2014-04-28 2019-06-26 株式会社ブイ・テクノロジー 露光装置及び露光方法
JP6543064B2 (ja) * 2015-03-25 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124064A (en) * 1997-02-14 2000-09-26 Nikon Corporation Light exposure controlling method
US6492649B1 (en) * 1997-07-25 2002-12-10 Nikon Corporation Projection exposure apparatus, projection exposure method, optical cleaning method and method of fabricating semiconductor device
US6842500B1 (en) * 1998-09-17 2005-01-11 Nikon Corporation Exposure apparatus and exposure method using same
JP2007148360A (ja) * 2005-11-04 2007-06-14 Orc Mfg Co Ltd 周辺露光装置およびその方法
JP2013104934A (ja) * 2011-11-11 2013-05-30 Tokyo Electron Ltd 露光装置及び露光方法
TW201704888A (zh) * 2015-03-25 2017-02-01 思可林集團股份有限公司 曝光裝置及基板處理裝置

Also Published As

Publication number Publication date
CN110100301A (zh) 2019-08-06
KR20190102289A (ko) 2019-09-03
WO2018159005A1 (ja) 2018-09-07
JP6768561B2 (ja) 2020-10-14
TWI649642B (zh) 2019-02-01
JP2018147918A (ja) 2018-09-20
TW201833670A (zh) 2018-09-16
KR102307596B1 (ko) 2021-09-30

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