CN110091095A - 焊膏和安装结构体 - Google Patents
焊膏和安装结构体 Download PDFInfo
- Publication number
- CN110091095A CN110091095A CN201910056995.6A CN201910056995A CN110091095A CN 110091095 A CN110091095 A CN 110091095A CN 201910056995 A CN201910056995 A CN 201910056995A CN 110091095 A CN110091095 A CN 110091095A
- Authority
- CN
- China
- Prior art keywords
- weight
- epoxy resin
- soldering paste
- reactive diluent
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/362—Selection of compositions of fluxes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5046—Amines heterocyclic
- C08G59/5053—Amines heterocyclic containing only nitrogen as a heteroatom
- C08G59/5073—Amines heterocyclic containing only nitrogen as a heteroatom having two nitrogen atoms in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
- H01L2224/1132—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/11332—Manufacturing methods by local deposition of the material of the bump connector in solid form using a powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13199—Material of the matrix
- H01L2224/13294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/1339—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/1339—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/13391—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/1601—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/165—Material
- H01L2224/16501—Material at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8121—Applying energy for connecting using a reflow oven
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81499—Material of the matrix
- H01L2224/81594—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/815 - H01L2224/81591
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81598—Fillers
- H01L2224/81599—Base material
- H01L2224/816—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81598—Fillers
- H01L2224/81599—Base material
- H01L2224/8169—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/81598—Fillers
- H01L2224/81599—Base material
- H01L2224/8169—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/81691—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/8185—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/81855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/81862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81909—Post-treatment of the bump connector or bonding area
- H01L2224/8192—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/069—Polyurethane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明的目的在于提供焊膏、以及使用该焊膏来安装电子部件而得的安装结构体,所述焊膏为低粘度且涂布作业性优异、电子部件的加固性高、兼顾高室温密合性与修复性、并且还具有耐湿绝缘性等优异的固化物特性。本发明的焊膏包含焊料粉末和助焊剂,上述助焊剂包含环氧树脂、反应性稀释剂、固化剂、有机酸以及橡胶改性环氧树脂,上述反应性稀释剂包含具有2个以上的环氧基的化合物,并且粘度为150mPa·s以上且700mPa·s,该反应性稀释剂中所含的总氯量为0.5重量%以下,并且相对于上述助焊剂的总重量以5重量%以上且45重量%以下的比例被包含。
Description
技术领域
本发明主要涉及将半导体部件或电子部件等焊接于电路基板时所使用的焊膏,尤其是涉及在助焊剂成分中包含环氧树脂的焊膏以及安装结构体。
背景技术
近年来,一直在推进移动电话或PDA(Personal Digital Assistant)等移动设备的小型化、高功能化。作为能够与之对应的安装技术,大多使用的是BGA(Ball Grid Array)或CSP(Chip Scale Package)等安装结构。移动设备容易被暴露于落下冲击等机械性负荷。对于QFP(Quad Flat Package)来说,在其引线部分吸收冲击。但是,对于不带有用于缓和冲击的引线的BGA或CSP等来说,确保耐冲击可靠性变得越发重要。
作为以往的代表性焊料的Pb共晶焊料的熔点为183℃。但是,对于近来的无铅焊料的熔点来说,例如对于代表性的Sn-Ag-Cu系焊料的熔点来说,变成比Pb共晶焊料的熔点高30℃左右。回流炉型材(プロフアイル)的最高温度也变成220~260℃,即变高。因此,在将高温耐性弱的部件安装于电路基板时,由于仅该部件在另外的工序中进行点焊接合等,所以生产率显著降低。
因此,开始使用并无Sn-Ag-Cu系焊料(以下称作SAC焊料)的熔点高这一缺点的Sn-Zn系、Sn-Ag-In系或Sn-Bi系等低熔点无Pb焊料。但是,在使用了Sn-Zn系、Sn-Ag-In系或Sn-Bi系焊料的BGA连接中,其焊料连接部的连接可靠性、特别是耐冲击可靠性等尚未被充分地确立。
作为用于提高连接部的耐冲击可靠性的对策,提出了:使用在助焊剂中包含热固化性树脂的焊膏(以下也简称作焊膏)的半导体安装结构体及其制造方法(例如参照专利文献1)。
作为这样的焊膏的组成的一例,可列举出包含由环氧树脂、固化剂、有机酸及增稠剂构成的助焊剂、以及焊料粉末的膏剂的组成。
图5为使用以往的焊膏进行接合而得的CSP的球部的截面图。如图5所示,成为了如下结构:将设置于电路基板21的电极22与设置于电路基板23的电极24之间利用SAC焊料凸块25和SnBi低温焊料导电部29进行接合,且其周围利用作为固化后的固体环氧树脂的加固部26b进行了加固。
图6A~图6C为示意性地示出使用了以往的焊膏的CSP的球部的接合工序的截面说明图。将设置于电路基板21的电极22与设置于电路基板23的电极24之间利用SAC焊料凸块25和包含SnBi低温焊料的以往的焊膏27进行接合,然后利用干燥机28进行加热固化,由此完成。成为了如下结构:SnBi低温焊料导电部29的周围利用作为固化后的固体环氧树脂的加固部26b进行了加固。
对于包含热固化性树脂的焊膏来说,在进行加热而使焊料熔融连接的工序中,树脂与焊料发生分离,能够形成树脂覆盖焊料的周边的加固结构。该加固的结果:焊料的连接部的强度变高,能够提高耐冲击可靠性。
在使用了焊膏的安装工序中,使用金属掩模将电路基板的布线电极等印刷于规定的位置后,利用回流炉进行加热。此时,通过助焊剂而起到利用还原反应将被焊接的金属表面的氧化膜以及焊料粉末的表面的氧化膜化学性地除去的作用、即助焊作用,能够实现焊料的熔融连接。然后,继续进行环氧树脂的固化,电路基板的布线电极与部件的接合以及利用树脂的加固在1次加热回流工序中进行。
一般来说,膏状焊膏若未以50体积%左右的比率来包含焊料,则难以具有稳定的导电性。若以这样的高比率来含有焊料粉末,则膏状焊膏粘度变得非常高。因此,对于膏状焊膏来说,通过包含高沸点的溶剂来降低粘度,以形成膏剂的形态的方式来调整粘度。
另一方面,如专利文献2所示,在助焊剂中包含热固化性树脂的焊膏通常为无溶剂,而是通过使用双酚系的液状环氧树脂来进行膏剂化。但是,若以高比率加入焊料粉末,则变成高粘度,处置会变得非常困难。即使如膏状焊膏那样地添加溶剂,对于非反应性的溶剂来说,会成为环氧树脂与固化剂的固化反应的妨碍,作为增塑剂来起作用,因此并不优选。
因此,作为焊膏的低粘度化的方法之一,如专利文献3所示,有下述方法:将改变了焊料的粒径的焊料组合,进行最密填充而实现低粘化。
现有技术文献
专利文献
专利文献1:日本特许第5204241号公报
专利文献2:日本特许第5373464号公报
专利文献3:日本特许第5728636号公报
发明内容
发明要解决的问题
对于一般的环氧粘接剂等来说,为了降低粘度,使用作为低分子量的环氧化物(エポキシ)的反应性稀释剂来代替溶剂。作为反应性稀释剂,通常可举出作为烷基缩水甘油醚类系的丁基缩水甘油醚或2-乙基己基缩水甘油醚等。在将它们用于焊膏时,反应性稀释剂的粘度非常低,因此低粘度化效果大。但是,对于反应性稀释剂来说,由于其沸点低,所以挥发性高,存在因固化时的加热而挥发这样的问题。进而,反应性稀释剂为单官能,因此还存在难以提高交联密度,也难以显现固化物的刚性,吸湿率变高等问题。而且,通常的反应性稀释剂中大多大量含有卤素离子、特别是氯离子等杂质离子,与高吸湿率相伴,还存在经焊料接合的半导体部件的耐湿绝缘性变差这样的问题。
专利文献1~3中所示的焊膏为了克服经安装的半导体在室温下的耐落下性方面的缺陷或高温下的修复(再安装)的困难性这样的问题,为使焊膏的助焊剂成分中含有橡胶改性环氧树脂的焊膏。但是,这些焊膏中所含的橡胶改性环氧树脂与如前所述的通常的环氧化物的相容性不好这样的问题却新显露出来。具体来说,在焊膏中使用了上述的环氧化物时,在固化物的表面变得容易发生渗出,产生异物的附着等问题。因此,期望即使在助焊剂成分中包含橡胶改性环氧树脂时也不发生渗出的焊膏。
本发明是为了解决上述问题的发明,其目的在于,提供焊膏以及使用该焊膏来安装电子部件而得的安装结构体,所述焊膏为低粘度且涂布作业性优异、电子部件的加固性高、兼顾高室温密合性与修复性、并且还具有耐湿绝缘性等优异的固化物特性。
用于解决问题的方案
本发明的焊膏包含焊料粉末和助焊剂,上述助焊剂包含环氧树脂、反应性稀释剂、固化剂、有机酸以及橡胶改性环氧树脂,上述反应性稀释剂包含具有2个以上的环氧基的化合物,并且该反应性稀释剂的粘度为150mPa·s以上且700mPa·s以下,该反应性稀释剂中所含的总氯量为0.5重量%以下,并且该反应性稀释剂相对于上述助焊剂的总重量以5重量%以上且45重量%以下的比率被包含。本发明的安装结构体是使用上述焊膏将电子部件安装于电路基板而得的安装结构体,其具备上述电子部件与上述电路基板进行了金属接合的导电部、以及通过利用上述助焊剂的固化物来覆盖上述导电部的周围而形成的加固部。
发明效果
根据本发明的焊膏,粘度低且涂布作业性优异,电子部件的加固性高,兼具高室温密合性与修复性,并且还具有耐湿绝缘性等优异的固化物特性。
具体来说,对于使用本发明的焊膏来安装电子部件而得的安装结构体来说,电子部件与电路基板利用低温焊料进行接合,其周围被树脂覆盖,由此可形成:通过利用助焊剂的固化物来覆盖由焊料形成的导电部而被加固了的结构(加固部)。能够形成这样的结构的本发明的焊膏为焊料比率高的膏剂,并且选择含有交联密度不易降低的优异的反应性稀释剂,由此即使为低粘度也具有稳定的印刷性。另外,回流焊后的安装结构体具有高室温时的密合性与加热时的修复性,还具有优异的耐湿绝缘性。进而,即使在焊膏的助焊剂成分中包含橡胶改性环氧树脂,也能够防止渗出的发生。
附图说明
图1是使用本发明的实施方式中的焊膏来进行接合的CSP的球部的截面图。
图2A是示意性地示出使用了本发明的实施方式中的焊膏的CSP的球部的接合工序的截面说明图。
图2B是示意性地示出使用了本发明的实施方式中的焊膏的CSP的球部的接合工序的截面说明图。
图2C是示意性地示出使用了本发明的实施方式中的焊膏的CSP的球部的接合工序的截面说明图。
图3A是示意性地示出使用了本发明的实施方式中的焊膏的芯片部件的接合工序的截面说明图。
图3B是示意性地示出使用了本发明的实施方式中的焊膏的芯片部件的接合工序的截面说明图。
图3C是示意性地示出使用了本发明的实施方式中的焊膏的芯片部件的接合工序的截面说明图。
图4是示出芯片部件的剪切密合力测定方法的截面示意图。
图5是使用以往的焊膏来进行接合的CSP的球部的截面图。
图6A是示意性地示出使用了以往的焊膏的CSP的球部的接合工序的截面说明图。
图6B是示意性地示出使用了以往的焊膏的CSP的球部的接合工序的截面说明图。
图6C是示意性地示出使用了以往的焊膏的CSP的球部的接合工序的截面说明图。
具体实施方式
以下,对于本发明的实施方式,一边参照附图一边进行说明。
本发明的实施方式中的焊膏包含焊料粉末和助焊剂。图1为使用本发明的实施方式中的焊膏来进行接合的CSP的球部的截面图。如图1所示,成为了下述结构:将设置于电路基板1的电极2与设置于电路基板3的电极4之间利用焊料凸块5和来源于焊料粉末的导电部9进行金属性地接合,且其周围被作为来源于助焊剂的固化后的固体环氧树脂的加固部6b进行了加固。
对于本发明的实施方式中的焊膏的组成,以下详细进行说明。
本发明的实施方式中的焊膏包含焊料粉末和助焊剂,根据需要也可以包含其他成分。助焊剂包含环氧树脂、反应性稀释剂、固化剂、有机酸(活性剂)以及橡胶改性环氧树脂。
<助焊剂>
本发明的实施方式中的焊膏中的助焊剂中包含环氧树脂、反应性稀释剂、固化剂、有机酸(活性剂)以及橡胶改性环氧树脂。相对于焊膏的总重量,助焊剂的量优选处于10重量%以上且40重量%以下、更优选处于15重量%以上且25重量%以下、进一步优选处于18重量%以上且22重量%以下的范围。通过本发明的焊膏中的助焊剂的含量为上述范围,从而能够有效地实现接合部的高连接可靠性与膏剂的优异印刷作业性以及稳定的导电性。以下,对于助焊剂所含的各必需成分进一步详细进行记载。
(环氧树脂)
环氧树脂通常是指通过在结构内具有环氧基而能够基于加热来进行固化的热固化性树脂。在本发明的实施方式中,助焊剂所含的环氧树脂(基础环氧树脂)在常温下为液状。通过配合这样的环氧树脂,从而能够易于将焊料粒子等其他成分分散。在本说明书中,“常温下为液状”是指在大气压下的5℃~28℃的温度范围、特别是室温20℃前后具有流动性。作为在常温下为液状的环氧树脂,只要是在1分子内具有2个以上环氧基的环氧树脂,其分子量以及分子结构就没有特别限制,可使用各种环氧树脂。具体来说,例如可使用缩水甘油醚型、缩水甘油胺型、缩水甘油酯型或烯烃氧化型(脂环式)等各种液状的环氧树脂。进而,具体地例如可使用双酚A型环氧树脂、双酚F型环氧树脂等双酚型环氧树脂、氢化双酚A型环氧树脂、氢化双酚F型环氧树脂等氢化双酚型环氧树脂、联苯型环氧树脂、含萘环的环氧树脂、脂环式环氧树脂、二环戊二烯型环氧树脂、苯酚酚醛型环氧树脂、甲酚酚醛型环氧树脂、三苯基甲烷型环氧树脂、脂肪族系环氧树脂、异氰脲酸三缩水甘油酯等。它们可以单独使用1种,或者可以组合使用2种以上。它们之中,若考虑到半导体密封用液状环氧树脂组合物的低粘度化和固化物的物性提高,则作为在常温下为液状的环氧树脂,优选双酚型环氧树脂、氢化双酚型环氧树脂。另外,还可组合使用在常温下为固体的环氧树脂。作为在常温下为固体的环氧树脂,可使用例如联苯型环氧树脂、二环戊二烯型环氧树脂、三嗪骨架环氧树脂等。环氧树脂的量相对于助焊剂的总重量优选以25重量%以上且90重量%以下的范围使用,更优选以35重量%以上且70重量%以下的范围使用,进一步优选以38重量%以上且63重量%以下的范围使用。通过本发明的助焊剂中的环氧树脂的含量处于上述范围,从而能够有效地提高接合部的连接可靠性。
(反应性稀释剂)
本发明的实施方式中,助焊剂所含的反应性稀释剂包含在化合物的末端或侧链具有2个以上的环氧基的化合物。更具体来说,反应性稀释剂实质上由该具有2个以上的环氧基的化合物构成。这里所说的反应性稀释剂中的“实质上”是指,相对于反应性稀释剂的总重量,优选以90重量%以上且低于100重量%的范围的量、更优选以95重量%以上且低于100重量%的范围的量、进一步优选以99重量%以上且低于100重量%的范围的量、更进一步优选以99.5重量%以上且低于100重量%的范围的量在反应性稀释剂中含有该具有2个以上的环氧基的化合物。余量为在反应性稀释剂的制造过程等中可能含有的杂质、例如后述的卤素离子等。反应性稀释剂的粘度为150mPa·s以上且700mPa·s以下,该反应性稀释剂中所含的总氯量为0.5重量%以下。对于反应性稀释剂来说,若主要考虑助焊剂固化物的物性,则优选实质上由在主骨架具有苯环或环戊二烯骨架等刚性的骨架的化合物构成。
环氧基的数量为1的化合物的反应性稀释剂无法与固化剂进行反应来提高交联密度,因此需要具有2个以上的环氧基。但是,在环氧基的数量多达3个或4个的程度时,反应性稀释剂自身的粘度变高。对于这样的反应性稀释剂来说,粘度降低效果变小,含有其的焊膏的粘度也变高。其结果,涂布作业性降低。对于这种平衡,本发明人等进行了深入的研究,结果发现优选的反应性稀释剂实质上由环氧基的数量具有2个或3个的化合物构成,并且其粘度为150mPa·s以上且700mPa·s以下时最优异。反应性稀释剂的粘度低于150mPa·s时,粘度降低效果高,但是为不具有刚性的骨架的反应性稀释剂,或者为主要由单官能环氧化物构成的反应性稀释剂。另一方面,反应性稀释剂的粘度高于700mPa·s时,具有极其刚性的骨架,且为主要由多官能环氧化物构成的反应性稀释剂,物性方面优异,但是粘度降低效果低。本发明中所使用的反应性稀释剂的粘度更优选为170mPa·s以上且680mPa·s以下,进一步优选为200mPa·s以上且660mPa·s以下,更进一步优选为230mPa·s以上且650mPa·s以下。在此,在本说明书中,反应性稀释剂的粘度是指使用东机产业公司制的E型粘度计所测得的粘度。
进而,反应性稀释剂通常因其制造过程而大多含有大量氯离子。该氯离子所代表的卤素离子成为电气电子部件中的漏电流增加的一个原因。反应性稀释剂所含的氯因水分的浸入而发生离子化,引起电气电子部件的泄漏不良、腐蚀现象。作为这些问题的对策来说,对于反应性稀释剂,使用降低了氯离子量的反应性稀释剂是很重要的。本发明人等进行了深入的研究,结果发现:若反应性稀释剂中所含的总氯量为0.5重量%以下,则耐湿绝缘性变得良好。该总氯量优选为0.4重量%以下、进一步优选为0.3重量%以下、更进一步优选为0.2重量%以下、再进一步优选为0.1重量%以下、更加优选为0.08重量%以下。需要说明的是,在本说明书中,反应性稀释剂中所含的总氯量(或者反应性稀释剂中所含的氯离子的量)是指使用硝酸银标准液通过电位差滴定装置(京都电子工业公司制、AT-710)所测得的经换算的值。若反应性稀释剂中所含的总氯量多于0.5重量%,则进行耐湿处理时的绝缘性降低。
若考虑以上的方面,则作为本发明中使用的反应性稀释剂的化合物,优选为二环戊二烯二甲醇二缩水甘油醚、1,3-双[(2,3环氧丙基)氧基]苯、或N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺。或者,作为反应性稀释剂的化合物,包含选自二环戊二烯二甲醇二缩水甘油醚、1,3-双[(2,3环氧丙基)氧基]苯和N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺中的至少一种。
对于这些反应性稀释剂来说,若考虑焊膏的流动性以及交联密度降低,则相对于助焊剂的总重量而以5重量%以上且45重量%以下的比例被包含。该量优选以5重量%以上且40重量%以下的比例、进一步优选以5重量%以上且35重量%以下的比例被包含。
二环戊二烯二甲醇二缩水甘油醚(以下所示的化1的结构式)为在作为刚性的骨架的二环戊二烯的两末端带有2个环氧基的结构。作为实质上为二环戊二烯二甲醇二缩水甘油醚的反应性稀释剂的一例,若使用ADEKA公司制的EP-4088L来测定性质,则其粘度为230mPa·s,总氯量为0.04重量%。二环戊二烯二甲醇二缩水甘油醚具有刚性的骨架,因此在将其作为反应性稀释剂时,设想环氧固化物的室温密合性会变强。
[化1]
1,3-双[(2,3环氧丙基)氧基]苯(以下所示的化2的结构式)是在稳定的骨架的苯环的两末端带有2个环氧基的结构。作为实质上为1,3-双[(2,3环氧丙基)氧基]苯的反应性稀释剂的一例,若使用Nagase ChemteX公司制的EX-201IM来测定性质,则其粘度为400mPa·s,总氯量为0.04重量%。1,3-双[(2,3环氧丙基)氧基]苯具有刚性的苯环,因此在将其作为反应性稀释剂时,设想环氧固化物的室温密合性强,进而变为低吸湿。
[化2]
N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺(以下所示的化3的结构式)为在稳定的骨架的苯胺结构的氮原子上带有2个环氧基且在苯骨架上带有1个环氧基的结构。作为实质上为N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺的反应性稀释剂的一例,若使用ADEKA公司制的EP-3950S来测定性质,则其粘度为650mPa·s,总氯量为0.08重量%。N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺具有刚性的苯环,且具有高极性的氮原子,因此在将其作为反应性稀释剂时,设想环氧固化物的室温密合性会变强。
[化3]
(固化剂)
作为固化剂,可使用一般的环氧树脂固化剂。例如可使用酸酐、苯酚酚醛树脂(phenol novolac)、各种硫醇化合物、各种胺类、双氰胺、咪唑类、金属络合物以及它们的加合物化合物,例如多胺的加合物改性物等,但并不限定于这些。特别是对于各种咪唑类来说,单组分性与焊料熔融性的兼顾优异,由此可优选使用。作为咪唑类,可使用例如2MZ、C11Z、2PZ、2E4MZ、2P4MZ、1B2MZ、1B2PZ、2MZ-CN、2E4MZ-CN、2PZ-CN、C11Z-CN、2PZ-CNS、C11Z-CNS、2MZ-A、C11Z-A、2E4MZ-A、2P4MHZ、2PHZ、2MA-OK、2PZ-OK(均为四国化成工业公司制)、将这些咪唑类与环氧树脂加成而得的化合物,但并不限定于这些。另外,还可使用将这些固化剂利用聚氨酯系、聚酯系的高分子物质等覆盖而进行微囊化而得的固化剂。
固化剂的使用量可适宜地设定,优选使相对于环氧树脂的环氧当量而言的固化剂的化学计量上的当量比达到0.8以上且1.2以下的范围。通过固化剂的含量为上述范围,从而能够有效地提高所形成的接合部的部件的连接可靠性与高温下的修复性。
进而,根据需要还可将固化促进剂配合在助焊剂中。作为固化促进剂,除了上述咪唑类之外,例如可使用叔胺类、1,8-二氮杂双环(5.4.0)十一碳烯-7、1,5-二氮杂双环(4.3.0)壬烯-5等环状胺类以及它们的四苯基硼酸盐、三丁基膦等三烷基膦类、三苯基膦等三芳基膦类、四苯基鏻四苯基硼酸盐、四(正丁基)鏻四苯基硼酸盐等季鏻盐、乙酰丙酮Fe等金属络合物以及它们的加合物化合物。这些固化促进剂的配合量可以考虑凝胶化时间、保存稳定性来适宜地设定。
(有机酸)
有机酸(活性剂)的种类没有特别限定,可使用任意的有机化合物的酸。例如可使用以松香酸所代表的松香成分材料、各种胺及其盐、癸二酸盐、己二酸、戊二酸、琥珀酸、丙二酸、柠檬酸、庚二酸等。特别是有机酸具有优异的助焊作用(在此,助焊作用是指:将在涂布焊膏的金属表面所产生的氧化覆膜除去这样的还原作用、以及使熔融焊料的表面张力降低而促进焊料对接合金属表面的润湿性的作用)。
这些有机酸可以为1种成分,也可以混合2种以上的成分。而且,在这些有机酸之中,己二酸、戊二酸的助焊作用优异,作为化合物的稳定性高,故优选。有机酸的使用量可适宜地设定,优选使相对于环氧树脂的环氧当量而言的有机酸的化学计量上的当量比达到0.8以上且1.2以下的范围。通过有机酸的含量处于上述范围,从而能够有效地提高所形成的接合部的部件的连接可靠性与高温下的修复性。
(橡胶改性环氧树脂)
本发明的实施方式中的焊膏的助焊剂包含橡胶改性环氧树脂。一般来说,从高粘接、绝缘性等优点出发,环氧树脂被用于粘接剂、涂料、电气电子材料等,但是作为本质上的缺点,可列举出韧性不足。由于为刚性的,所以通过机械性的负荷而容易引起裂纹等。具体来说,在对部件的连接部施加机械性的负荷时部件发生剥离,因此引起可靠性寿命的缩短。
对于使环氧树脂具有强韧性的方法,可列举出挠性树脂的聚合物合金(IPN(相互侵入高分子网络)、即通过添加强韧的热塑性聚合物而形成的多种不同的聚合物混入掺合而成的多成分系高分子)、海岛结构的形成、各种橡胶骨架的导入等。
例如可认为形成环氧树脂与丙烯酸类树脂的聚合物合金、以及形成环氧树脂与硅酮树脂的海岛结构等。这些为通过制成多种不同种类的树脂的微观的局部存在化状态而发挥出特殊的低弹性的特性的方法,但是稳定地制成该分散状态是非常难的。
对于使环氧树脂单体具有强韧性的方法来说,优选为下述方法:使环氧树脂的骨架之中具有环氧基来作为具有交联性的官能团,进而使其保有硅酮骨架、聚丁二烯骨架和/或聚氨酯骨架等来作为具备强韧性的官能团,从而制成橡胶改性环氧树脂。
对于在分子内具有硅酮骨架的环氧树脂来说,若考虑到挥发性杂质与环氧树脂(基础环氧树脂)的相容性方面的问题,则与其他的骨架比较时便利性略微变差。具体来说,作为市售的制品,可列举出X-22-163、X-22-343、X-22-2000(均为Shin-Etsu Silicone公司制)、TSF4730(Momentive Performance Materials Inc.制)等。
分子内具有聚丁二烯骨架的橡胶改性环氧树脂在分子内具有聚丁二烯结构和环氧基这两者,因此同时具有高粘接力与强韧性。作为分子内具有聚丁二烯骨架的橡胶改性环氧树脂中的聚丁二烯骨架的配置,可考虑位于主链的配置(包含1,4-聚丁二烯)、和位于侧链的配置(包含1,2-聚丁二烯),它们均能够体现出作为橡胶特性的强韧性,能够合适地使用。另外,对双键的部分进行了氢化而得的聚丁二烯也示出同样的橡胶特性,并且因为没有双键而不易发生氧化,示出优异的耐热性。
在使用具有聚丁二烯骨架的环氧树脂作为助焊剂成分时,优选为液状。但是,只要是通过与液状的环氧树脂一起使用而进行液状化的具有聚丁二烯骨架的环氧树脂,或通过添加溶剂而进行液状化的具有聚丁二烯骨架的环氧树脂,则即使是固体的橡胶改性环氧树脂也可以使用。若分子内具有聚丁二烯骨架的橡胶改性环氧树脂与固化剂进行反应而被引入交联结构,则即使在室温下形成比较硬的结构,在高温环境(具体时为160℃等)下分子运动也变激烈,因此聚丁二烯骨架变得如橡胶那样进行伸缩,固化物变为非常低的弹性。因此,通过使用分子内具有聚丁二烯骨架的环氧树脂作为橡胶改性环氧树脂,从而可得到在室温下牢固地密合于基材,且在高温环境下密合性低的焊膏。该焊膏在高温环境下利用铲等施加物理性的力时能够容易地拆卸。
分子内具有聚丁二烯骨架的橡胶改性环氧树脂的一例示于以下的化4。但是并不仅限于该结构,为分子内具有聚丁二烯骨架和环氧基的任意的环氧树脂即可。作为具体的市售品,可列举出Epolead PB3600、PB4700(均为大赛璐化学公司制)、日石聚丁二烯E-1000-3.5(日本石油化学公司制)、R-15EPT、R-45EPT(均为Nagase ChemteX公司制)等。
[化4]
(X、Y为重复结构的指数)
分子内具有聚氨酯骨架的环氧树脂通过在分子内具有聚氨酯结构和环氧基而能够同时具备高粘接力与强韧性。分子内具有聚氨酯骨架的环氧树脂的一例示于以下的化5。但是并不仅限定于该结构,为分子内具有聚氨酯骨架和环氧基的任意的环氧树脂即可。聚氨酯骨架一般为通过多元醇与多异氰酸酯的反应而形成且进一步向其中导入环氧基而形成的骨架,对于其工艺没有特别限制。只要具有聚氨酯骨架和环氧基这两者,则在其以外的主链骨架上也可以保有各种结构(例如脂肪族骨架等)。
[化5]
(m、n为重复结构的指数、z为脂肪族骨架)
在使用具有聚氨酯骨架的环氧树脂作为助焊剂成分时,优选为液状。但是,只要是通过与液状的环氧树脂一起使用而进行液状化的具有聚氨酯骨架的环氧树脂、或者通过添加溶剂而进行液状化的具有聚氨酯骨架的环氧树脂,则即使是固体的橡胶改性环氧树脂也能够使用。若分子内具有聚氨酯骨架的环氧树脂与固化剂进行反应而被引入交联结构中,则基于该聚氨酯骨架的强韧的结构而能够在室温下具有高剪切密合力。也就是说,即使在室温下对芯片部件等施加剪切力,基于聚氨酯骨架的粘性也不会轻易地在交联结构中产生裂缝。由此能够具有不易剥离的特性。因此,具有聚氨酯骨架的环氧树脂的固化物能够发挥出高耐剪切剥离可靠性。作为具体的市售品,可列举出EPU-7N、EPU-73B(均为ADEKA公司制)等。
在本发明中,对于使用利用了具有聚丁二烯骨架的橡胶改性环氧树脂的焊膏而将芯片部件安装连接于电路基板时的密合强度来说,在助焊剂的Tg以上的高温区域中,与使用了不含有橡胶改性环氧树脂的焊膏时相比显著地降低。即,是指通过使接合部达到高温而能够容易拆卸。具有聚丁二烯骨架的环氧树脂作为橡胶改性环氧树脂而单独地被包含在助焊剂中时,若其含有率相对于助焊剂的总重量为2重量%以上且30重量%以下,则在印刷性等的平衡方面优异。
在本发明中,对于使用利用了具有聚氨酯骨架的橡胶改性环氧树脂的焊膏而将芯片部件安装连接于电路基板时的密合强度来说,在室温下,与使用了不包含橡胶改性环氧树脂的焊膏时相比变高。即,是指接合部在室温下的密合性高。在具有聚氨酯骨架的环氧树脂作为橡胶改性环氧树脂而单独地被包含在助焊剂中时,若其含有率相对于助焊剂的总重量而为1重量%以上且20重量%以下,则在印刷性等的平衡方面优异。进而,还可并用具有聚丁二烯骨架的橡胶改性环氧树脂、与具有聚氨酯骨架的橡胶改性环氧树脂这两者。即,在本发明的助焊剂中,橡胶改性环氧树脂可以含有选自具有聚丁二烯骨架的环氧树脂以及具有聚氨酯骨架的环氧树脂中的至少一种。
具有聚丁二烯骨架的橡胶改性环氧树脂和/或具有聚氨酯骨架的橡胶改性环氧树脂能够发挥出如上所述的优异的特性。但是,这两者均存在与通用的环氧化物的相容性不好这样的问题。具体来说,由于具有聚丁二烯骨架和/或聚氨酯骨架,因此发挥出强韧性,另一方面,因为为高分子量,所以存在与通用的环氧化物的相容性不好这样的问题。因此,在环氧固化物的表面发生未反应的橡胶改性环氧树脂的渗出。其结果可知:在固化物表面出现粘性,导致灰尘的附着以及吸湿率的恶化。
因此,本发明人等发现:通过使上述的反应性稀释剂包含在本发明的助焊剂中,从而能够防止如上所述的因橡胶改性环氧树脂所致的渗出的发生。另外,本发明人等进一步进行了深入的研究,结果还发现:该反应性稀释剂的添加量如上所述相对于助焊剂的总重量而优选以5重量%以上且30重量%以下的比例被包含。若添加量少于5重量%,则防止渗出发生的效果小。另一方面,若多于30重量%,则交联密度降低,吸湿率变高,后述的耐湿绝缘性发生劣化。
通过使用本发明的实施方式的焊膏,从而能够将半导体部件等电子部件安装于具有导体布线的电路基板等。该安装体结构具备电子部件的端子与电路基板的电极进行接合而得的接合部分。该接合部分成为焊料(导电部)的周围被经固化的环氧树脂进行了加固的结构(加固部)。在该焊料的周围经固化的环氧树脂为绝缘性。但是,在环氧树脂固化物部分被放置在高湿下而发生了吸湿的情况下,若在固化物中存在氯离子等卤素离子,则产生漏电流而使绝缘性发生劣化。作为该劣化的要因,可推测为:环氧树脂固化物中存在的卤素离子量、特别是氯离子量、吸湿率以及密合力产生了影响。由于难以将该3个要因的影响分别量化,所以本发明人等发现:通过控制反应性稀释剂中所含的总氯量,从而能够维持绝缘性。具体来说,如上所述,发现只要反应性稀释剂中所含的总氯量为0.5重量%以下即可。
作为本发明的焊膏中所含的助焊剂的其他成分的例子,可列举出通常所使用的改性剂、添加剂等。另外,为了降低焊膏的粘度,赋予流动性,还可以添加低沸点的溶剂、稀释剂。进而,作为用于保持印刷形状的触变性赋予剂,添加氢化蓖麻油或硬脂酸酰胺等也是有效的。
<焊料粉末>
作为本发明的焊膏所含的焊料粉末,优选使用熔点240℃以下的焊料粉末。焊料粒子的熔点的下限没有特别限定,但优选为130℃以上。BGA或CSP半导体的焊料球使用锡-银-铜(SAC)焊料粉末,但是通过将比其熔点(220℃)更低熔点的焊料粉末用于焊膏中,从而能够防止SAC焊料粉末的再熔融。焊料粉末的组成没有特别限定,但可以为焊料合金的形式。例如可使用将Sn作为基础的合金等。另外,可优选使用包含22重量%以上且68重量%以下的Bi、0重量%以上且2重量%以下的Ag和0重量%以上且73重量%以下的In、且余量为Sn的焊料粉末。更优选使用SnBi系的42Sn-58Bi、42Sn-57Bi-1.0Ag、16Sn-56Bi-28In等。相对于本发明的焊膏的总质量来说的焊料粉末的含量优选处于50重量%以上且95重量%以下、更优选处于60重量%以上且90重量%以下、进一步优选处于75重量%以上且85重量%以下的范围。通过使本发明的焊膏中的焊料粉末的含量处于上述范围,从而能够有效地实现接合部的高连接可靠性与膏剂的优异印刷作业性。
本说明书中的焊料粉末的组成通过将焊料粉末所含的元素的元素符号用连字符连结来表述。本说明书中,为了说明焊料粉末的金属组成,有时在金属元素的正前面示出数值或数值范围,如在该技术领域中通常所使用的那样,这是将在金属组成中所占的各元素的质量%(=重量%)以数值或数值范围来表示。焊料粉末只要实质上由所列举的元素构成,就可以含有不可避免地混入的微量金属、例如Ni、Zn、Sb、Cu等金属。
本说明书中的焊料粉末的熔点是指观察试样的加热升温过程中的状态变化时的、熔融结束的温度,可使用DSC、TG-DTA等来进行测定。
接下来,示出上述的本发明的实施方式中的焊膏的制备方法、以及使用该焊膏而将电子部件安装于电路基板来制作(或制造)安装结构体的具体的方法的一例。
首先,称量上述的环氧树脂、反应性稀释剂、固化剂、有机酸以及橡胶改性环氧树脂并进行混合,制成助焊剂。在该助焊剂中添加焊料粉末来进行混合、混炼。
可使用本发明的实施方式中的焊膏将半导体部件安装于具有导体布线的电路基板等。本发明的实施方式中的安装结构体、例如半导体装置具备:使用上述的焊膏而将半导体部件的端子与电路基板的电极进行接合而得的接合部。焊膏的涂布例如可通过将在与电极相同的位置设置有贯通孔的金属掩模重叠于电路基板后,向金属掩模的表面供给焊膏,并利用刮板填充于贯通孔来进行。然后,若将金属掩模从电路基板分离,则能够得到对每个电极涂布有焊膏的电路基板。
接下来,在焊膏为未固化状态下,以使芯片部件或半导体部件的端子与电路基板的电极对置的方式,使用芯片安装器等将芯片部件或半导体部件与电路基板重叠。在此,作为芯片部件,能够搭载芯片电阻器或芯片电容器等。另外,作为半导体部件,可使用设置焊料球作为端子而形成的CSP或BGA、设置引线作为端子而形成的QFP等半导体封装、或未被收纳在封装中而设置端子所形成的半导体元件(裸芯片)等。
在该状态下,将配置有芯片部件的印制线路板在回流炉中加热至规定的加热温度。加热温度可设定为焊料粉末充分地熔融且树脂成分的固化反应充分地进行的适当的温度。优选该加热温度可按照在焊料粉末完全熔融之前进行环氧树脂的固化反应而不会阻碍焊料粒子的聚集和熔融的方式进行设定。因此,优选的加热温度为比焊料粉末的熔点高10℃以上的温度,且未比焊料粉末的熔点高出60℃以上的温度。
通过上述工序可制造本发明的另一个实施方式的半导体装置,该半导体装置具备:芯片部件或半导体部件的端子与电路基板的电极借助本发明的实施方式的焊膏进行连接而得的接合部。该接合部具备:焊料粉末与焊料球进行熔融一体化而得的焊料接合部(导电部)、和其周围被助焊剂的固化物覆盖而形成的部分、即环氧树脂固化部(加固部)。如上所述,根据本发明的实施方式的焊膏,能够制作出下述安装结构体:通过导电部来实施部件与基板的电接合,并且通过加固部来实施机械性的加固。
图2A~图2C是示意性地示出使用了本发明的实施方式的焊膏的CSP的球部的接合工序的截面说明图。如图2A~图2C所示,将设置于电路基板1的电极2与设置于电路基板3的电极4之间利用焊料凸块5和焊膏7进行接合,然后利用干燥机8进行加热固化,从而完成。成为下述结构:所形成的导电部9的周围被作为固化后的固体环氧树脂的加固部6b进行了加固。
图3A~图3C是示意性地示出使用了本发明的实施方式的焊膏的芯片部件的接合工序的截面说明图。如图3A~图3C所示,在设置于电路基板1的电极4上所涂布的焊膏7上搭载芯片部件10,并利用干燥机8进行加热固化。于是,焊料进行熔融连接而形成导电部9,形成因焊料的凝聚力所挤出的液体的环氧树脂覆盖焊料的周围和/或芯片部件10下部的结构。然后,通过加热,固化为作为固体环氧树脂的加固部6b,从而完成。由此,可制造具有加固部6b和导电部9的安装结构体。
实施例
以下示出本发明的实施例以及比较例。下述的本发明的实施例以及比较例的方式仅为例示,并非对本发明的任何限定。实施例以及比较例中,只要没有提及,则“份”以及“%”基于重量基准。
<焊膏的作成>
首先,以达到在焊膏中占有以下的表1所记载的重量份的比例的方式分别称量基础环氧树脂、橡胶改性环氧树脂、反应性稀释剂、有机酸和固化剂,并放入行星式混合机中而将各成分混炼,在环氧树脂中均匀地进行分散,制备出实施例1~6以及比较例1~4的助焊剂。基础环氧树脂使用了双酚F型环氧树脂(日本环氧树脂公司制、jER806)。橡胶改性环氧树脂适宜地使用了聚丁二烯改性环氧树脂(Nagase ChemteX公司制、R-15EPT)和聚氨酯改性环氧树脂(ADEKA公司制、EPU-7N)。有机酸使用了戊二酸(关东化学公司制)。固化剂使用了四国化成工业公司制的作为咪唑系固化剂的2P4MHZ(2-苯基-4-甲基-5-羟甲基咪唑)。
对于反应性稀释剂来说,在实施例1~6以及比较例1、3以及4中,如下述表1所示,适宜地使用了ADEKA公司制的EP-4088L(二环戊二烯二甲醇二缩水甘油醚)、ADEKA公司制的EP-3950S(N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺)、Nagase ChemteX公司制的EX-201IM(1,3-双[(2,3环氧丙基)氧基]苯)、新日本理科公司制的DME100(1,4-环己烷二甲醇二缩水甘油醚)、以及ADEKA公司制的ED-509S(叔丁基苯基缩水甘油醚)。比较例2中未配合反应性稀释剂。
接下来,在如上所述地制得的实施例1~6以及比较例1~4的助焊剂中,以分别占有下述表1所示的重量份的比例添加焊料粉末,进一步进行混炼,由此制备出焊膏。实施例1~5以及比较例1~4的焊料粉末使用了具有JIS H42B:58A所规定的焊料组成42Sn58Bi的焊料粉末,实施例6的焊料粉末使用了具有焊料组成42Sn57Bi1.0Ag的焊料粉末。焊料粉末根据常规方法进行制作。该焊料粒子的平均粒径为15μm、熔点为139℃。
在本说明书中,平均粒径是指:以体积基准求出粒度分布并且在将总体积设为100%的累积曲线中累积值达到50%的点的粒径(D50)。所述的平均粒径可使用激光衍射·散射式粒径·粒度分布测定装置或电子扫描显微镜来进行测定。
<密合性的评价元件的制作>
使用金属掩模以厚度达到0.1mm的方式将如上所述地制成的焊膏印刷于电路基板(FR-4基板)上的经Au镀敷的电极上,从而形成焊膏印刷部。
而且,使用芯片安装器将3.2mm×1.6mm尺寸的芯片电阻器(锡电极)安装于电路基板上的焊膏印刷部。需要说明的是,电路基板中,电极材质为铜,基板材质为玻璃环氧材料。然后,使用回流装置在160℃加热6分钟,由此形成接合部,制作出评价元件。
<评价>
对于实施例1~6以及比较例1~4,对于以下的项目进行了评价。评价结果以各例中的焊膏的特性的形式一并示出表1中。
(印刷性)
通过观察使用金属掩模所印刷的焊膏的形状,从而进行了焊膏的印刷性的评价。观察是通过目视对向电极区域的纳入状态、流挂、尖突形状来进行。印刷性的评价以使膏剂通过掩模的贯通孔而转印于电路基板的电极上时的形状来进行判定。将在电极部能够保持形状的情况设为○,将在形状上存在不良(产生流挂、尖突)的情况设为△,将形状非常差的情况设为×。
(室温密合性)
图4为示出芯片部件的剪切密合力测定方法的截面示意图。将芯片部件10固定于能够加热的加热板平台12,使用剪切夹具11来水平地进行挤压,由此测定密合强度。使用利用这样的方法来实施测定的粘结试验机装置(DAGE公司制、Series4000)来测定如上所述地制作出的密合性的评价元件在室温20℃下的剪切密合力,由此进行了焊膏的室温密合性的评价。在室温密合性的评价中,将对接合部所施加的荷重即使超过15Kg/芯片也不发生破损的情况设为○,将对接合部所施加的荷重在低于14Kg/芯片的范围内就发生了破损的情况设为×。
(高温密合性)
与上述的室温密合性的评价同样地,使用粘结试验机装置(DAGE公司制、Series4000),在如图4所示那样将评价元件固定于加热板平台12的状态下对加热板进行加热,将评价元件加热至160℃,然后与上述同样地对剪切密合力进行测定,由此进行了焊膏的高温密合性的评价。在高温密合性的评价中,将能够以对接合部施加的荷重为5Kg/芯片以下而将接合部分离的情况设为○,将能够以对接合部施加的荷重为6Kg/芯片以上且7Kg/芯片以下的范围而将接合部分离的情况设为△,将除非对接合部施加的荷重为8Kg/芯片以上的荷重否则接合部不发生分离的情况设为×。
(渗出的有无)
在评价元件的制作中,在使用金属掩模而印刷了焊膏的基板上未搭载芯片部件,而使用回流装置在160℃加热6分钟。利用显微镜观察来判定在该基板上的环氧树脂固化物的表层部是否有渗出。将未发生渗出的情况设为○,将发生了渗出的情况设为×。
(耐湿绝缘性)
在具有梳型图案基板(导体宽0.3mm、导体间隔0.3mm)的电路基板上印刷涂布焊膏,利用糊剂的树脂来覆盖电极之间,将由此所得的基板放入85℃85%RH的高温高湿槽中1000小时并施加直流电压50V。测定此时的电阻值,并换算为体积电阻率。耐湿绝缘性的评价中,将体积电阻率为1×108Ω·em以上的情况设为○,将体积电阻率为1×107Ω·cm以上且低于1×108Ω·cm的情况设为△,将体积电阻率低于1×107Ω·cm的情况设为×。
(综合判定)
在印刷性、室温密合性、高温密合性、渗出的有无以及耐湿绝缘性这五项评价中,将全部项目为○的情况设为○,将即使1项为△的情况设为△,将即使1项为×的情况设为×,进行了综合的评价。
以下的表1所示的配合量表示重量份。
[表1]
在实施例1中,焊料粉末的种类使用了42Sn-58Bi(表中示为SB),相对于焊膏100重量份,将焊料粉末设为82重量份,将焊料比率设为82重量%。作为助焊剂中的橡胶改性环氧树脂,使其含有聚丁二烯改性环氧树脂0.4重量份、聚氨酯改性环氧树脂0.5重量份。作为反应性稀释剂,使其含有ADEKA公司制的EP-4088L(二环戊二烯二甲醇二缩水甘油醚)3重量份,该量为在将助焊剂的重量(焊膏的焊料粉末以外的成分的重量的合计)设为100重量份时占有其16.7重量份的量(16.7phr)。使其含有有机酸3.6重量份、固化剂1.8重量份。
对于实施例1的印刷性来说,没有流挂和尖突,为良好的形状,因此设为○。室温密合性为15Kg/芯片,是优异的,160℃密合性也降低至5Kg/芯片以下,因此修复性优异。回流后的环氧树脂固化物未观察到渗出物。耐湿绝缘性也是体积电阻率为1×108Ω·cm以上。根据以上的评价结果,作为综合判定而判定为优异的特性○。
在实施例2中,与实施例1同样地,焊料粉末的种类使用42Sn-58Bi(表中示为SB),将相对于焊膏100重量份而言的焊料比率设为82重量%。作为助焊剂中的橡胶改性环氧树脂,使其仅含有聚氨酯改性环氧树脂0.9重量份。除此以外,基础环氧树脂、有机酸以及固化剂的各重量份、以及反应性稀释剂的种类和重量份与实施例1相同。
实施例2的印刷性与实施例1同样地优异。室温密合性为18Kg/芯片,是优异的,但是160℃密合性为7Kg/芯片,略微地提高,因此成为能够使用的水平,设为△。回流后的环氧树脂固化物未观察到渗出物。耐湿绝缘性也是体积电阻率为1×108Ω·cm以上,是优异的。根据以上的评价结果,△的判定为一项,因此作为综合判定而设为△。但是,该实施例2的评价结果能够判定为能够充分使用的水平且为略微优异的特性。
对于实施例3~5来说,焊料粉末的种类使用42Sn-58Bi(表中示为SB),并分别设为如上述表1所示的焊料比率。除此以外,对于助焊剂中的基础环氧树脂的重量份、橡胶改性环氧树脂(聚丁二烯改性环氧树脂和/或聚氨酯改性环氧树脂)的种类以及重量份、反应性稀释剂的种类以及重量份、有机酸的重量份、以及固化剂的重量份,分别如上述表1所示地含有。实施例3~5的各自的评价结果如上述表1所示。
实施例6中,助焊剂的配合与实施例1相同,而焊料粉末的种类使用了42Sn-57Bi-1.0Ag(表中示为SBA)。实施例6的评价结果如上述表1所示。
在比较例1中,助焊剂中的反应性稀释剂使用了新日本理化公司制的DME-100(1,4-环己烷二甲醇二缩水甘油醚(以下示出的化6的结构式))3重量份。该反应性稀释剂的粘度为50mPa·s以上且100mPa·s以下,反应性稀释剂中所含的总氯量为5重量%。该反应性稀释剂在骨架中具有略微脆弱的环状的环。因此,比较例1中的环氧固化物的室温密合性变弱。另外,由于氯离子非常多,因此在耐湿绝缘性方面容易发生劣化。
[化6]
对于比较例1的印刷性来说,没有流挂或尖突,为良好的形状,因此设为○。室温密合性以及160℃密合性也良好。进而,回流后的环氧树脂固化物也未观察到渗出物。但是,对于耐湿绝缘性来说,体积电阻率低至1×106Ω·cm,判定设为×。可推测其原因在于:反应性稀释剂中所含的总氯量多至5%。根据以上的评价结果,作为综合判定而判定为无法使用的水平、即设为×。
在比较例2中,焊料比率为82重量%,在助焊剂中不含有反应性稀释剂。对于比较例2的印刷性来说,产生了尖突,印刷形状差,评价为×。可推测其原因在于:由于不含有反应性稀释剂,所以粘度变高。另外,回流后的环氧树脂固化物未观察到渗出物。可推测其原因在于:不含有具有提高与环氧树脂的相容性差的橡胶改性环氧树脂的相容性的作用的反应性稀释剂。根据以上的评价结果,作为综合判定而判定为无法使用的水平、即设为×。
在比较例3中,助焊剂中的反应性稀释剂使用了ADEKA公司制的EP-4088L(二环戊二烯二甲醇二缩水甘油醚)10重量份(50phr)。对于比较例3的印刷性来说,发生了流挂,印刷形状差,评价为×。可推测其原因在于:反应性稀释剂的量过多,而使流动性过强。另外,室温密合性也降低。可推测其原因也在于:反应性稀释剂过多,交联密度变低。根据以上的评价结果,作为综合判定而判定为无法使用的水平、即设为×。
在比较例4中,助焊剂中的反应性稀释剂使用了ADEKA公司制的ED-509S(叔丁基苯基缩水甘油醚(以下所示的化7的结构式))3重量份。该反应性稀释剂的粘度为20mPa·s,反应性稀释剂中所含的总氯量为0.02重量%。
[化7]
比较例4的印刷性为低粘度、低触变性,且有略微流挂的倾向,因此评价设为△。室温密合性为13Kg/芯片,成为低的结果。另一方面,160℃密合性非常低,修复性良好。另外,回流后的环氧树脂固化物未观察到渗出物。对于耐湿绝缘性来说,体积电阻率略低,为1×107Ω·cm,评价设为△。这可推测为:虽然该反应性稀释剂中所含的总氯量低至0.02重量%,但是由于为单官能环氧化物,所以固化物的交联密度变低,室温密合性变弱。另外,可推测:由于吸湿率变高,因此耐湿绝缘性降低。根据以上的评价结果,作为综合判定而判定为无法使用的水平、即设为×。
由上述表1的结果可知:在将环氧树脂、固化剂、有机酸、橡胶改性环氧树脂以及焊料粉末作为必需成分的焊膏中,通过在助焊剂中进一步含有本发明所述的规定的反应性稀释剂,从而能够发挥出优异的印刷性等效果。对于规定的反应性稀释剂的量来说,若考虑到流动性等,则相对于助焊剂的总重量而以5重量%以上且低于50重量%的比例被包含(phr)。本发明所述的规定的反应性稀释剂为低分子量的环氧树脂,因此通过与固化剂进行反应,从而能够被引入环氧化物交联结构中。因此,能够防止:如通常所使用的溶剂那样,在加热时发生气化而产生空隙。
本发明所述的规定的反应性稀释剂的化合物具有2个以上的环氧基,优选具有二环戊二烯骨架或苯环等刚性结构的骨架。因此,使用本发明所述的焊膏时的固化物能够以高交联密度来形成,能够表现出优异的焊料的加固效果,进而具有高室温密合性。另外,能够形成致密的固化物,因此还能够降低吸湿率,即使在高温高湿下长时间放置,也能够维持低吸湿状态。而且,反应性稀释剂中所含的总氯量(氯离子的量)为0.5重量%以下,是非常少的,因此能够将在放入至85℃85%RH的高温高湿槽中1000小时并施加直流电压50V时的体积电阻率维持在1×108Ω·cm以上。反应性稀释剂中所含的总氯量为5重量%左右的较多量时,判明了:对于吸湿率多的单官能环氧化物来说,体积电阻率成为1×107Ω·cm以下。
另外,根据本发明可知:在回流后的环氧树脂固化物中,能够消除推测是由橡胶改性环氧树脂引起的渗出的发生。含有聚丁二烯骨架的橡胶改性环氧树脂和/或含有聚氨酯骨架的橡胶改性环氧树脂这两者均与通用的环氧化物的相容性不好。因此,在环氧固化物的表面发生了未反应的橡胶改性环氧树脂渗出,使固化物表面出现粘性,招致灰尘的附着、吸湿率的恶化的问题变得显著。因此,通过在包含它们的焊膏中适宜地添加本发明所述的规定的反应性稀释剂,从而能够提高环氧树脂与橡胶改性环氧树脂的相容性,能够防止固化物表面的渗出发生,能够实现焊膏的实用性的提高。
产业上的可利用性
本发明的焊膏以及安装结构体在电气/电子电路形成技术的领域中能够用于广泛的用途。例如可用于CCD元件、全息元件、芯片部件等电子部件的连接用以及将它们接合于基板的用途。进而,例如可用于将这些元件、部件或基板内装而得的制品,例如DVD、移动电话、便携式AV设备、数码相机等。
附图标记说明
1 电路基板
2 电极
3 电路基板
4 电极
5 焊料凸块
6a 环氧树脂
6b 加固部
7 焊膏
8 干燥机
9 导电部
10 芯片部件
11 剪切夹具
12 加热板平台
21 电路基板
22 电极
23 电路基板
24 电极
25 SAC焊料凸块
26b 加固部
27 焊膏
28 干燥机
29 SnBi低温焊料导电部
Claims (7)
1.一种焊膏,其包含焊料粉末和助焊剂,
所述助焊剂包含环氧树脂、反应性稀释剂、固化剂、有机酸以及橡胶改性环氧树脂,
所述反应性稀释剂包含具有2个以上的环氧基的化合物,并且该反应性稀释剂的粘度为150mPa·s以上且700mPa·s以下,该反应性稀释剂中所含的总氯量为0.5重量%以下,并且该反应性稀释剂相对于所述助焊剂的总重量以5重量%以上且45重量%以下的比例被包含。
2.根据权利要求1所述的焊膏,其中,所述反应性稀释剂中的具有2个以上的环氧基的化合物具有2个或3个环氧基。
3.根据权利要求1所述的焊膏,其中,所述反应性稀释剂中的具有2个以上的环氧基的化合物包含选自二环戊二烯二甲醇二缩水甘油醚、1,3-双[(2,3环氧丙基)氧基]苯以及N,N-双(2,3-环氧丙基)-4-(2,3-环氧丙氧基)苯胺中的至少一种。
4.根据权利要求1所述的焊膏,其中,所述反应性稀释剂相对于所述助焊剂的总重量以5重量%以上且30重量%以下的比例被包含。
5.根据权利要求1所述的焊膏,其中,所述橡胶改性环氧树脂包含选自具有聚丁二烯骨架的环氧树脂以及具有聚氨酯骨架的环氧树脂中的至少一种。
6.根据权利要求1所述的焊膏,其中,所述焊料粉末包含22重量%以上且68重量%以下的Bi、0重量%以上且2重量%以下的Ag、和0重量%以上且73重量%以下的In,余量为Sn。
7.一种安装结构体,其是使用权利要求1所述的焊膏将电子部件安装于电路基板而得的安装结构体,
所述安装结构体具备:所述电子部件与所述电路基板进行了金属接合的导电部、和通过利用所述助焊剂的固化物来覆盖所述导电部的周围而形成的加固部。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018015340A JP6967726B2 (ja) | 2018-01-31 | 2018-01-31 | はんだペーストおよび実装構造体 |
JP2018-015340 | 2018-01-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110091095A true CN110091095A (zh) | 2019-08-06 |
CN110091095B CN110091095B (zh) | 2022-06-24 |
Family
ID=67392691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910056995.6A Active CN110091095B (zh) | 2018-01-31 | 2019-01-21 | 焊膏和安装结构体 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20190232438A1 (zh) |
JP (1) | JP6967726B2 (zh) |
CN (1) | CN110091095B (zh) |
TW (1) | TWI796404B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112222672A (zh) * | 2020-10-09 | 2021-01-15 | 哈尔滨工业大学(深圳) | 一种低温封装用复合材料及其制备方法、及封装方法 |
CN112719689A (zh) * | 2019-10-28 | 2021-04-30 | 松下知识产权经营株式会社 | 焊膏和接合结构体 |
CN113369745A (zh) * | 2021-05-21 | 2021-09-10 | 北京理工大学 | 四元共晶焊料及制备方法、以及焊料成分 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180229333A1 (en) * | 2017-02-10 | 2018-08-16 | Panasonic Intellectual Property Management Co., Ltd. | Solder paste and mount structure obtained by using same |
JP2020075995A (ja) * | 2018-11-07 | 2020-05-21 | パナソニックIpマネジメント株式会社 | 硬化樹脂組成物および実装構造体 |
CN112384141A (zh) * | 2019-03-29 | 2021-02-19 | 株式会社村田制作所 | 伸缩性安装基板 |
US11224132B2 (en) * | 2019-09-06 | 2022-01-11 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
JP2021178336A (ja) | 2020-05-12 | 2021-11-18 | パナソニックIpマネジメント株式会社 | 樹脂フラックスはんだペーストおよび実装構造体 |
CN111916551A (zh) * | 2020-06-24 | 2020-11-10 | 深圳市聚飞光电股份有限公司 | 一种led发光件制作方法、led发光件和发光装置 |
KR20220073969A (ko) * | 2020-11-27 | 2022-06-03 | 주식회사 테라온 | 전력 반도체 패키지의 솔더용 페이스트 조성물 |
JP2023000704A (ja) * | 2021-06-18 | 2023-01-04 | パナソニックIpマネジメント株式会社 | 導電性ペーストおよびそれを用いて形成される導電膜 |
US20220030721A1 (en) * | 2021-07-02 | 2022-01-27 | Panasonic Intellectual Property Management Co., Ltd. | Mounting method and mounting structure formed by the same |
TW202311441A (zh) * | 2021-09-13 | 2023-03-16 | 日商拓自達電線股份有限公司 | 導電性樹脂組成物及其硬化物 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5904782A (en) * | 1995-05-24 | 1999-05-18 | Fry Metals, Inc. | Epoxy based, VOC-free soldering flux |
JP2002361476A (ja) * | 2001-06-08 | 2002-12-18 | Showa Denko Kk | ハンダ金属、ハンダペースト、ハンダ付け方法、ハンダ付けした回路板、及びハンダ付けした接合物 |
US20040014842A1 (en) * | 2000-10-11 | 2004-01-22 | Toshiro Takeda | Die-attaching paste and semiconductor device |
CN1579698A (zh) * | 2003-08-08 | 2005-02-16 | 株式会社东芝 | 热固性助焊剂、焊膏和焊接方法 |
US20130113121A1 (en) * | 2010-06-17 | 2013-05-09 | Chiaki Okada | Resin paste composition |
US20130255079A1 (en) * | 2010-10-14 | 2013-10-03 | Stora Enso Oyj | Method and arrangement for attaching a chip to a printed conductive surface |
CN103517782A (zh) * | 2011-05-25 | 2014-01-15 | 播磨化成株式会社 | 焊膏用焊剂和焊膏 |
JP2017082022A (ja) * | 2015-10-22 | 2017-05-18 | ナガセケムテックス株式会社 | エポキシ樹脂接着剤 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002187938A (ja) * | 2000-10-11 | 2002-07-05 | Sumitomo Bakelite Co Ltd | ダイアタッチペースト及び半導体装置 |
MX347776B (es) * | 2012-06-30 | 2017-05-12 | Senju Metal Industry Co | Bola de soldadura libre de plomo. |
JP5590260B1 (ja) * | 2014-02-04 | 2014-09-17 | 千住金属工業株式会社 | Agボール、Ag核ボール、フラックスコートAgボール、フラックスコートAg核ボール、はんだ継手、フォームはんだ、はんだペースト、Agペースト及びAg核ペースト |
-
2018
- 2018-01-31 JP JP2018015340A patent/JP6967726B2/ja active Active
- 2018-12-18 TW TW107145629A patent/TWI796404B/zh active
- 2018-12-18 US US16/223,952 patent/US20190232438A1/en not_active Abandoned
-
2019
- 2019-01-21 CN CN201910056995.6A patent/CN110091095B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5904782A (en) * | 1995-05-24 | 1999-05-18 | Fry Metals, Inc. | Epoxy based, VOC-free soldering flux |
US20040014842A1 (en) * | 2000-10-11 | 2004-01-22 | Toshiro Takeda | Die-attaching paste and semiconductor device |
JP2002361476A (ja) * | 2001-06-08 | 2002-12-18 | Showa Denko Kk | ハンダ金属、ハンダペースト、ハンダ付け方法、ハンダ付けした回路板、及びハンダ付けした接合物 |
CN1579698A (zh) * | 2003-08-08 | 2005-02-16 | 株式会社东芝 | 热固性助焊剂、焊膏和焊接方法 |
US20130113121A1 (en) * | 2010-06-17 | 2013-05-09 | Chiaki Okada | Resin paste composition |
US20130255079A1 (en) * | 2010-10-14 | 2013-10-03 | Stora Enso Oyj | Method and arrangement for attaching a chip to a printed conductive surface |
CN103517782A (zh) * | 2011-05-25 | 2014-01-15 | 播磨化成株式会社 | 焊膏用焊剂和焊膏 |
JP2017082022A (ja) * | 2015-10-22 | 2017-05-18 | ナガセケムテックス株式会社 | エポキシ樹脂接着剤 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112719689A (zh) * | 2019-10-28 | 2021-04-30 | 松下知识产权经营株式会社 | 焊膏和接合结构体 |
CN112222672A (zh) * | 2020-10-09 | 2021-01-15 | 哈尔滨工业大学(深圳) | 一种低温封装用复合材料及其制备方法、及封装方法 |
CN113369745A (zh) * | 2021-05-21 | 2021-09-10 | 北京理工大学 | 四元共晶焊料及制备方法、以及焊料成分 |
Also Published As
Publication number | Publication date |
---|---|
JP6967726B2 (ja) | 2021-11-17 |
TW201937507A (zh) | 2019-09-16 |
CN110091095B (zh) | 2022-06-24 |
JP2019130568A (ja) | 2019-08-08 |
US20190232438A1 (en) | 2019-08-01 |
TWI796404B (zh) | 2023-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110091095A (zh) | 焊膏和安装结构体 | |
JP6534122B2 (ja) | 樹脂フラックスはんだペースト及び実装構造体 | |
CN105849820B (zh) | 导电糊剂、导电糊剂的制造方法、连接结构体及连接结构体的制造方法 | |
JP5698447B2 (ja) | はんだ接合剤組成物 | |
CN104822789B (zh) | 导电性粘接剂组合物及使用其的电子元件 | |
US20180229333A1 (en) | Solder paste and mount structure obtained by using same | |
CN105493207B (zh) | 连接结构体的制造方法 | |
CN105900180B (zh) | 导电糊剂、连接结构体及连接结构体的制造方法 | |
CN107148653A (zh) | 导电糊剂、连接结构体及连接结构体的制造方法 | |
CN104246997B (zh) | 安装结构体及其制造方法 | |
CN106624452A (zh) | 焊膏、钎焊用助焊剂及使用其的安装结构体 | |
JP5571730B2 (ja) | 熱硬化性樹脂組成物および半導体装置 | |
US20200306893A1 (en) | Solder paste and mount structure | |
CN107077912A (zh) | 导电糊剂、连接结构体及连接结构体的制造方法 | |
US11623307B2 (en) | Resin flux solder paste and mount structure | |
CN106716550A (zh) | 导电糊剂、连接结构体及连接结构体的制造方法 | |
CN108406165B (zh) | 焊膏和由其得到的安装结构体 | |
JP2020089897A (ja) | はんだペーストおよび実装構造体 | |
WO2020095634A1 (ja) | 硬化樹脂組成物および実装構造体 | |
CN114250043B (zh) | 自熔接型导电连接材料、包括其的键合模块及其制造方法 | |
JP2024017848A (ja) | はんだペーストおよび実装構造体 | |
JP2017017318A (ja) | 接続構造体の製造方法及び接続構造体 | |
CN117715726A (zh) | 助焊剂用树脂组合物、焊料糊剂和安装结构体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |