CN110082977A - 一种tft阵列基板及显示面板 - Google Patents

一种tft阵列基板及显示面板 Download PDF

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CN110082977A
CN110082977A CN201910402429.6A CN201910402429A CN110082977A CN 110082977 A CN110082977 A CN 110082977A CN 201910402429 A CN201910402429 A CN 201910402429A CN 110082977 A CN110082977 A CN 110082977A
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layer
tft array
array substrate
insulating layer
gate insulating
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CN110082977B (zh
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莫超德
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Suzhou China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2019/088692 priority patent/WO2020228058A1/zh
Priority to US16/607,191 priority patent/US11251202B2/en
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本申请公开了一种TFT阵列基板及显示面板，其中，TFT阵列基板包括衬底基板、减反射层和栅极绝缘层；所述TFT阵列基板包括透光区；所述减反射层设置在位于所述透光区的衬底基板上，所述栅极绝缘层设置在所述减反射层上；所述衬底基板、所述减反射层和所述栅极绝缘层的光折射率依次增大，使得背光源在TFT阵列基板的透光区从光疏介质进入光密介质形成半波损失减少了反射光能量，降低了背光源在透光区各接触界面的反射率，提高了背光源在TFT阵列基板的透光区的穿透率。

Description

一种TFT阵列基板及显示面板
技术领域
本申请涉及显示面板技术领域，尤其涉及一种TFT阵列基板及显示面板。
背景技术
现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)，液晶显示面板本身不会发光，必须通过背光模块提供光源。液晶显示面板一般包括薄膜晶体管(Thin Film Transistor，TFT)阵列基板、彩膜(Color Filter，CF)基板、以及配置于两基板间的液晶层(Liquid Crystal Layer)，其工作原理是通过在两片基板上施加驱动电压来控制液晶层的液晶分子旋转，将背光模组的光线折射出来产生画面。
通常背光源从TFT阵列基板侧入射，从CF基板侧出来，背光源入射到TFT阵列基板的衬底基板与栅极绝缘层接触界面时，在接触界面处有较高的光反射现象，降低了背光源的穿透率。并且，随着大尺寸和高分辨率的技术发展趋势，液晶显示面板的像素密度密度越来越大，对于高像素密度的显示面板，像素设计较小，开口率较低，衬底基板与栅极绝缘层接触界面的入射光高反射造成背光源损失更大，使得背光源在TFT阵列基板上的穿透率更低。
发明内容
本申请实施例提供一种TFT阵列基板及显示面板，以解决背光源在TFT阵列基板上的穿透率低的技术问题。
本申请实施例提供了一种TFT阵列基板，包括衬底基板、减反射层和栅极绝缘层；所述TFT阵列基板包括透光区；所述减反射层设置在位于所述透光区的衬底基板上，所述栅极绝缘层设置在所述减反射层上；
其中，所述衬底基板、所述减反射层和所述栅极绝缘层的光折射率依次增大。
可选的，所述TFT阵列基板还包括非透光区；所述减反射层还设置在位于所述非透光区的衬底基板上；位于所述非透光区的减反射层上设有栅极层；所述栅极绝缘层还设置在所述栅极层上。
可选的，所述TFT阵列基板还包括依次设置在所述栅极绝缘层上的半导体层、源漏电极层、钝化层及像素电极层。
可选的，所述栅极绝缘层包括依次设置在所述栅极层上的第一栅极绝缘层和第二栅极绝缘层，所述第一栅极绝缘层和第二栅极绝缘层的材料不同。
可选的，所述第一栅极绝缘层和所述第二栅极绝缘层的材料包括氮化硅或氧化硅。
可选的，所述减反射层包括依次叠加在所述衬底基板上的多层膜层，每层膜层的光折射率大于所述衬底基板的光折射率，且小于所述栅极绝缘层的光折射率；在朝向所述栅极绝缘层的方向上，所述多层膜层的光折射率逐层增大。
可选的，每层膜层的材料包括氮氧化硅、三氧化二铝和树脂类化合物中的任意一种。
可选的，所述减反射层的光折射率为其中，n为所述减反射层的光折射率，n1为所述衬底基板的光折射率，n2为所述栅极绝缘层的光折射率。
可选的，所述减反射层的厚度为其中，e为所述减反射层的厚度，k为自然数，λ为波长为550纳米的绿光波长。
本申请实施例还提供了一种显示面板，包括以上所述的TFT阵列基板。
本申请的有益效果为：本申请通过在位于TFT阵列基板的透光区的衬底基板和栅极绝缘层之间设置减反射层，且衬底基板、减反射层和栅极绝缘层的光折射率逐渐增大，使得背光源在TFT阵列基板的透光区从光疏介质进入光密介质形成半波损失减少了反射光能量，避免了背光源在光折射率相差较大的衬底基板和栅极绝缘层的接触界面的高反射现象，降低了背光源在透光区各接触界面的反射率，从而提高了背光源在TFT阵列基板的透光区的穿透率；另外，在位于TFT阵列基板的非透光区的衬底基板和栅极层之间也设置了减反射层，增加了衬底基板和栅极层之间的接触界面数量，使原本无法透过栅极层的背光源在衬底基板与减反射层的接触界面以及减反射层与栅极层的接触界面经过多次反射后部分光源从TFT阵列基板的透光区透过，进一步提高了背光源在TFT阵列基板的透光区的穿透率。
附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本申请实施例提供的一种TFT阵列基板的结构示意图；
图2为本申请实施例提供的一种TFT阵列基板的局部结构示意图；
图3为本申请实施例提供的另一种TFT阵列基板的局部结构示意图；
图4为本申请实施例提供的一种显示面板的结构示意图；
图5为本申请实施例提供的另一种显示面板的结构示意图。
具体实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和实施例对本申请作进一步说明。
如图1和图2所示，本申请实施例提供了一种TFT阵列基板1，包括衬底基板2、减反射层3和栅极绝缘层4；TFT阵列基板1包括透光区5；减反射层3设置在位于透光区5的衬底基板2上，栅极绝缘层4设置在减反射层3上；其中，衬底基板2、减反射层3和栅极绝缘层4的光折射率依次增大。
具体的，TFT阵列基板1在透光区5还包括依次设置栅极绝缘层4上的钝化层10和像素电极层11；背光源从TFT阵列基板1的衬底基板2侧向像素电极层11的方向提供光源。
本实施例中，在位于TFT阵列基板1的透光区5的衬底基板2和栅极绝缘层4之间设置减反射层3，且衬底基板2、减反射层3和栅极绝缘层4的光折射率逐渐增大，使得背光源在TFT阵列基板1的透光区5从光疏介质进入光密介质形成半波损失减少了反射光能量，避免了背光源在光折射率相差较大的衬底基板2和栅极绝缘层4的接触界面的高反射现象，降低了背光源在透光区5接触界面的反射率，从而提高了背光源在TFT阵列基板1的透光区5的穿透率。
本实施例可选的，TFT阵列基板1还包括非透光区6；减反射层3还设置在位于非透光区6的衬底基板2上；位于非透光区6的减反射层3上设有栅极层7；栅极绝缘层4还设置在栅极层7上。
具体的，TFT阵列基板1在非透光区6还包括依次设置栅极绝缘层4上的半导体层8(包括a-Si半导体活性层19和n+a-Si欧姆接触层20)、源漏电极层9、钝化层10及像素电极层11。
本实施例中，在位于TFT阵列基板1的非透光区6的衬底基板2和栅极层7之间也设置了减反射层3，增加了衬底基板2和栅极层7之间的界面数量，如图2所示，原本无法透过栅极层7的背光源在衬底基板2与减反射层3的接触界面以及减反射层3与栅极层7的接触界面经过多次反射后部分光源从TFT阵列基板1的透光区5透过，进一步提高了背光源在TFT阵列基板1的透光区5的穿透率。
本实施例可选的，非透光区6包括第一非透光区22和第二非透光区23；栅极层7包括同制程形成的栅极14和第一金属电极15(扫描线)；源漏电极层9包括同制程形成的源极16漏极17和第二金属电极18(数据线)；TFT阵列基板1在第一非透光区22包括衬底基板2以及依次设置在衬底基板2上的减反射层3、栅极14、栅极绝缘层4、半导体层8、源极16漏极17、钝化层10及像素电极层11；TFT阵列基板1在第二非透光区23包括衬底基板2以及依次设置在衬底基板2上的减反射层3、第一金属电极15、栅极绝缘层4、第二金属电极18、钝化层10及像素电极层11。在第一非透光区22，减反射层3设在衬底基板2和栅极14之间，在第二非透光区23，减反射层3设在衬底基板2和第一金属电极15之间，分别增加了第一非透光区22和第二非透光区23的接触界面的数量，使原本无法透过栅极14和第一金属电极15的背光源在衬底基板2与减反射层3的接触界面、减反射层3与栅极14的接触界面以及减反射层3与第一金属电极15的接触界面经过多次反射后部分光源从TFT阵列基板1的透光区5透过，进一步提高了背光源在TFT阵列基板1的透光区5的穿透率。
本实施例可选的，减反射层3包括依次叠加在衬底基板2上的多层膜层(未提供图示)，每层膜层的光折射率大于衬底基板2的光折射率，且小于栅极绝缘层4的光折射率；在朝向栅极绝缘层4的方向上，多层膜层的光折射率逐层增大。当然，减反射层3还可以由单层膜层组成。
具体的，每层膜层的材料包括氮氧化硅(光折射率范围为1.46～1.92)、三氧化二铝(光折射率范围为1.59～1.77)和树脂类化合物中的任意一种，当然，本申请实施例中的减反射层3的材料不限于此。
本实施例中，由光折射率逐层增大的多层膜层组成的减反射层3，增强了光的透射性，该减反射层3设置在光折射率较小的衬底基板2(例如玻璃基板，光折射率约为1.52)和光折射率较大的栅极绝缘层4(例如由氮化硅形成的栅极绝缘层4，光折射率约为2.0)之间，使得从衬底基板2至栅极绝缘层4，光折射率逐层增大，使得背光源在TFT阵列基板1的透光区5从光疏介质进入光密介质形成半波损失减少了反射光能量，降低了背光源在透光区5各接触界面的反射率，从而提高了背光源在TFT阵列基板1的透光区5的穿透率。
本实施例可选的，减反射层3的光折射率为其中，n为减反射层3的光折射率，n1为衬底基板2的光折射率，n2为栅极绝缘层4的光折射率。
本实施例中，减反射层3的光折射率可以由衬底基板2和栅极绝缘层4的光折射率决定，并可以依据计算得到的光折射率来选择减反射层3的材料。
本实施例可选的，减反射层3的厚度为其中，e为减反射层3的厚度，k为自然数，λ为波长为550纳米的绿光波长。本实施例中，减反射层3的厚度由减反射层3的光折射率和光的波长决定。
本实施例可选的，如图3所示，栅极绝缘层4包括依次设置在栅极层7上的第一栅极绝缘层12和第二栅极绝缘层13，第一栅极绝缘层12和第二栅极绝缘层13的材料不同。具体的，第一栅极绝缘层12和第二栅极绝缘层13的材料包括氮化硅或氧化硅。
本实施例中，第一栅极绝缘层12和第二栅极绝缘层13的材料包括氮化硅或氧化硅，其中氮化硅可有效隔离氧，防止栅极层7被氧化，而沉积形成的氧化硅可有效隔离氢，防止半导体层8被还原，因此，双层结构的栅极绝缘层4既可以保护栅极层7也可以保护半导体层8。
本实施例可选的，上述TFT阵列基板1通过以下步骤制备得到：
提供衬底基板2；
通过磁控溅射或气相沉积工艺在衬底基板2上形成减反射层3；
通过磁控溅射工艺在减反射层3上沉积一层金属层薄膜(包括钼、铝或铜等)，并通过黄光工艺及湿法刻蚀工艺形成栅极层7图案；
通过气相沉积工艺在栅极层7上依次形成栅极绝缘层4、半导体层8(包括a-Si半导体活性层19和n+a-Si欧姆接触层20)；并通过黄光工艺及干法刻蚀工艺形成a-Si半导体层8图案；
通过磁控溅射工艺在半导体层8形成后的衬底基板2上沉积一层金属层薄膜(包括钼、铝或铜等)，并通过黄光工艺及湿法刻蚀工艺形成源漏电极层9图案，再经过干法刻蚀工艺将源漏电极层9沟道处的欧姆接触层20刻蚀掉而得到TFT沟道；
通过气相沉积工艺在源漏电极层9形成后的衬底基板2上沉积一层非金属层薄膜(包括氮化硅或氧化硅等)，并通过黄光工艺及干法刻蚀工艺形成钝化层10过孔图案；
通过磁控溅射沉积工艺在钝化层10形成后的衬底基板2上形成一层ITO(Indium-Tin Oxide，氧化铟锡)薄膜，并通过黄光工艺及湿法刻蚀工艺形成像素电极层11图案。
本实施例中，通过以上方法制备得到的TFT阵列基板1设有减反射层3，具体减反射层3设置在衬底基板2和栅极绝缘层4之间，使得衬底基板2、减反射层3和栅极绝缘层4的光折射率逐渐增大，从而使得背光源在TFT阵列基板1的透光区5从光疏介质进入光密介质形成半波损失减少了反射光能量，避免了背光源在光折射率相差较大的衬底基板2和栅极绝缘层4的接触界面的高反射现象，降低了背光源在透光区5各接触界面的反射率，从而提高了背光源在TFT阵列基板1的透光区5的穿透率；另外，减反射层3还设置在衬底基板2和栅极层7之间，增加了衬底基板2和栅极层7之间的界面数量，使原本无法透过栅极层7的背光源在衬底基板2与减反射层3的接触界面以及减反射层3与栅极层7的接触界面经过多次反射后部分光源从TFT阵列基板1的透光区5透过，进一步提高了背光源在TFT阵列基板1上的穿透率。
如图4所示，本申请实施例还提供了一种显示面板21，包括以上TFT阵列基板1、与TFT阵列基板1对盒设置的彩膜基板24、设置在TFT阵列基板1和彩膜基板24之间的液晶层、以及设置在TFT阵列基板1远离彩膜基板24的一侧的背光源。
本实施例中，背光源从TFT阵列基板1侧向彩膜基板24侧提供光源，通过在位于TFT阵列基板1的透光区5的衬底基板2和栅极绝缘层4之间设置减反射层3，且衬底基板2、减反射层3和栅极绝缘层4的光折射率逐渐增大，使得背光源在TFT阵列基板1的透光区5从光疏介质进入光密介质形成半波损失减少了反射光能量，避免了背光源在光折射率相差较大的衬底基板2和栅极绝缘层4的接触界面的高反射现象，降低了背光源在透光区5各接触界面的反射率，从而提高了背光源在TFT阵列基板1的透光区5的穿透率；另外，在位于TFT阵列基板1的非透光区6的衬底基板2和栅极层7之间也设置了减反射层3，增加了衬底基板2和栅极层7之间的界面数量，使原本无法透过栅极层7的背光源在衬底基板2与减反射层3的接触界面以及减反射层3与栅极层7的接触界面经过多次反射后部分光源从TFT阵列基板1的透光区5透过，进一步提高了背光源在TFT阵列基板1上的穿透率。
如图5所示，本申请实施例还提供了一种显示面板21，包括以上TFT阵列基板1和设置在TFT阵列基板1上的彩色色阻层25。具体的，显示面板21包括将彩色色阻层25设置到TFT阵列基板1上(Color Filter on Array，COA)的显示面板或将隔垫物(Post Spacer，PS)设置在TFT阵列基板1上(PS on Array，POA)的显示面板，其中POA显示面板的彩色色阻层也设置在TFT阵列基板上。
本实施例中，TFT阵列基板1的减反射层3设置在衬底基板2与栅极绝缘层4之间，减反射层3的制程与彩色色阻层25和隔垫物的制程相互都没有影响，因此，上述光穿透率高的TFT阵列基板1可以应用到不同类型的显示面板中，包括COA显示面板和POA显示面板。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种TFT阵列基板，其特征在于，包括衬底基板、减反射层和栅极绝缘层；所述TFT阵列基板包括透光区；所述减反射层设置在位于所述透光区的衬底基板上，所述栅极绝缘层设置在所述减反射层上；
其中，所述衬底基板、所述减反射层和所述栅极绝缘层的光折射率依次增大。
2.如权利要求1所述的TFT阵列基板，其特征在于，所述TFT阵列基板还包括非透光区；所述减反射层还设置在位于所述非透光区的衬底基板上；位于所述非透光区的减反射层上设有栅极层；所述栅极绝缘层还设置在所述栅极层上。
3.如权利要求2所述的TFT阵列基板，其特征在于，所述TFT阵列基板还包括依次设置在所述栅极绝缘层上的半导体层、源漏电极层、钝化层及像素电极层。
4.如权利要求2所述的TFT阵列基板，其特征在于，所述栅极绝缘层包括依次设置在所述栅极层上的第一栅极绝缘层和第二栅极绝缘层，所述第一栅极绝缘层和第二栅极绝缘层的材料不同。
5.如权利要求4所述的TFT阵列基板，其特征在于，所述第一栅极绝缘层和所述第二栅极绝缘层的材料包括氮化硅或氧化硅。
6.如权利要求1所述的TFT阵列基板，其特征在于，所述减反射层包括依次叠加在所述衬底基板上的多层膜层，每层膜层的光折射率大于所述衬底基板的光折射率，且小于所述栅极绝缘层的光折射率；在朝向所述栅极绝缘层的方向上，所述多层膜层的光折射率逐层增大。
7.如权利要求6所述的TFT阵列基板，其特征在于，每层膜层的材料包括氮氧化硅、三氧化二铝和树脂类化合物中的任意一种。
8.如权利要求1所述的TFT阵列基板，其特征在于，所述减反射层的光折射率为其中，n为所述减反射层的光折射率，n1为所述衬底基板的光折射率，n2为所述栅极绝缘层的光折射率。
9.如权利要求8所述的TFT阵列基板，其特征在于，所述减反射层的厚度为其中，e为所述减反射层的厚度，k为自然数，λ为波长为550纳米的绿光波长。
10.一种显示面板，其特征在于，包括如权利要求1至9任意一项所述的TFT阵列基板。
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