WO2021068435A1 - 阵列基板及显示面板 - Google Patents

阵列基板及显示面板 Download PDF

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Publication number
WO2021068435A1
WO2021068435A1 PCT/CN2020/070804 CN2020070804W WO2021068435A1 WO 2021068435 A1 WO2021068435 A1 WO 2021068435A1 CN 2020070804 W CN2020070804 W CN 2020070804W WO 2021068435 A1 WO2021068435 A1 WO 2021068435A1
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WO
WIPO (PCT)
Prior art keywords
film layer
layer
array substrate
wiring
film
Prior art date
Application number
PCT/CN2020/070804
Other languages
English (en)
French (fr)
Inventor
赵晓峰
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/642,304 priority Critical patent/US11315959B2/en
Publication of WO2021068435A1 publication Critical patent/WO2021068435A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO

Definitions

  • the present invention relates to the field of display technology, and in particular to an array substrate and a display panel.
  • the screen-to-body ratio refers to the relative ratio of the area of the screen to the front panel of the electronic product. It is a parameter that makes it easier to obtain a good visual impression in the design of the electronic product.
  • the current situation of electronic products is that the screen occupancy is relatively small.
  • the upper and lower borders occupy a large screen-to-body ratio due to the handset, camera, and HOME button, resulting in a low screen-to-body ratio under the premise of appearance.
  • How to increase the screen-to-body ratio and reduce the upper and lower frame of the mobile phone to give consumers a better visual experience under the premise that the overall size of the traditional electronic product remains unchanged has become one of the current important research directions.
  • the under-screen camera is a feasible and effective solution.
  • how to achieve the coexistence of photographing and display is a technical problem, especially when there are multiple traces in the display panel, and multiple traces form rules sexual arrangement.
  • the line width of the trace is on the order of micrometers, which is very close to the wavelength band of visible light. After visible light passes through the display panel, interference and diffraction are extremely easy. That said, there is a great risk of interference. Therefore, how to avoid the interference and diffraction of the transmitted light, which cause interference to the imaging of the camera, is an important problem that needs to be solved urgently.
  • embodiments of the present invention provide an array substrate and a display panel, which can effectively solve the problems of light interference and diffraction.
  • the embodiment of the present invention provides an array substrate and a display panel, including: a wiring layer; a non-wiring layer located at the bottom of the wiring layer; the non-wiring layer includes a first film layer and a The second film layer, the first film layer and the second film layer are sequentially stacked in a direction away from the wiring layer, and the refractive index of the second film layer is smaller than the refractive index of the first film layer.
  • first film layer is disposed at the bottom of the wiring layer
  • second film layer is disposed adjacent to the first film layer and is located at the bottom of the first film layer.
  • the non-wired film layer further includes a third film layer, the third film layer is disposed on top of the non-wired layer, and the first film layer is disposed adjacent to the third film layer , And located at the bottom of the third film layer, the second film layer is arranged adjacent to the first film layer, and is located at the bottom of the first film layer.
  • the non-wired film layer further includes a third film layer, the first film layer is disposed on top of the non-wired layer, and the second film layer is disposed adjacent to the first film layer , And located at the bottom of the first film layer, the third film layer is arranged adjacent to the second film layer, and is located at the bottom of the second film layer.
  • a through hole is provided on the bottom layer of the non-wiring layer, and the through hole is used to enhance the light transmittance of the non-wiring layer.
  • the area where the through hole is located corresponds to the area where the external camera is located.
  • the material of the second film layer is one of silicon oxide, silicon nitride, and indium tin oxide.
  • the refractive index of the second film layer is 1.4 to 2.1.
  • An embodiment of the present invention also provides a display panel, which includes the above-mentioned array substrate.
  • the advantage of the present invention is that by providing a combined structure (the first film layer and the second film layer), the light that produces interference and diffraction is directed from the optically dense medium area (first film layer) to the optically thinner medium area (second film layer). Coating layer), the light with a larger angle of incidence will be totally reflected, and even if the light with a smaller angle of incidence is not totally reflected, the refraction angle will increase when the combined structure is adopted, so the interference and diffraction can be reduced.
  • the light enters the camera, so that the camera under the screen is not interfered with by interference and diffracted light.
  • the through hole is provided to increase the light transmittance of the display panel, so that the camera has a better shooting effect.
  • FIG. 1 is a schematic diagram of the structure of an array substrate provided by Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram of the structure of the array substrate provided by the second embodiment of the present invention.
  • FIG. 3 is a schematic diagram of the structure of an array substrate provided by the third embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a wiring layer structure provided by an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a display panel provided by an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a display device provided by an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated, thereby limiting the terms “first” and “The feature of “second” may explicitly or implicitly include one or more of the features.
  • “plurality” means two or more than two, unless otherwise specifically defined.
  • FIG. 1 it is a schematic diagram of the structure of an array substrate provided by Embodiment 1 of the present invention, which includes a wiring layer 1 and a non-wiring layer 10.
  • the wiring layer 1 contains a metal film layer (such as the gate layer 15), and the metal film layer interferes and diffracts light, and therefore interferes with the imaging of the camera below the display panel .
  • a metal film layer such as the gate layer 15
  • the wiring layer 1 mainly includes: an active layer 11, a source electrode layer 16 and a drain electrode layer 17, a gate layer 15, a gate insulating layer 14, an interlayer insulating layer 12 and a passivation layer 13.
  • the active layer 11 is disposed on the non-wiring layer 10.
  • the material of the active layer 11 is oxide, and the material of the oxide may be indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium zinc tin oxide (IGZTO), etc.,
  • the thickness is 100-1000 angstroms. In the process of manufacturing the oxide, photolithography of the oxide is required to form the active layer 11.
  • a gate insulating layer 14 is provided on the active layer 11, and a gate layer 15 is provided on the gate insulating layer 14.
  • the material of the gate insulating layer 14 is SiOx or SiNx, or a multilayer structure film composed of SiOx and SiOx, with a thickness of 1000-3000 angstroms, and the material of the gate layer 7 can be Mo, Al, Cu , Ti, etc., or an alloy, with a thickness of 2000-10000 angstroms.
  • An interlayer insulating layer (IDL) 12 is covered on the active layer 11 and the non-wiring layer 10.
  • the material of the interlayer insulating layer 12 is SiOx or SiNx, or is composed of SiOx and SiOx
  • the thickness of the multilayer structure film is about 2000 angstroms to 10000 angstroms.
  • a source electrode layer 16 and a drain electrode layer 17 are provided on the interlayer insulating layer 12.
  • the source electrode layer 16 and the drain electrode layer 17 can be made of copper.
  • the non-wiring layer 10 includes: a first film layer 2, a second film layer 3 and a third film layer 4.
  • the first film layer 2 is disposed at the bottom of the wiring layer 1
  • the second film layer 3 is disposed adjacent to the first film layer 2, and is located at the bottom of the first film layer 2
  • the The third film layer 4 is arranged adjacent to the second film layer 3 and is located at the bottom 3 of the second film layer.
  • the non-wiring layer 10 is composed of an inorganic layer.
  • the inorganic layer may be a glass substrate, but is not limited thereto.
  • it may also be a plastic substrate or a base substrate made of PI material.
  • the non-wiring layer 10 does not contain a metal film layer.
  • the refractive index of the second film layer 3 is smaller than that of the first film layer 2. This design can make the light from the optically dense medium area (first film layer) to the optically thin medium area (second film layer), and the refraction angle Will be greater than the angle of incidence, so light with a larger angle of incidence will be totally reflected.
  • the third film layer is further provided with a through hole 20, and a camera 5 is provided at a position corresponding to the through hole 20 and below the non-wiring layer 10, and the through hole is used for The light transmittance of the non-wiring layer 10 is enhanced, so that the camera 5 has a better shooting effect.
  • the advantage of the first embodiment of the present invention is that by providing a combined structure (the first film layer and the second film layer), the light that produces interference and diffraction is directed from the optically dense medium area (the first film layer) to the optically thinner medium area. (Second film layer), the light with a larger angle of incidence produces total reflection, so it can reduce the interference and diffracted light entering the camera, so that the camera under the screen will not interfere with the image formation by interference and diffracted light.
  • the through holes are provided to increase the light transmittance of the display panel, so that the camera has a better shooting effect.
  • FIG. 2 it is a schematic diagram of the structure of the array substrate provided by the second embodiment of the present invention, including: a wiring layer 1 and a non-wiring layer 10.
  • the non-wiring film layer 10 includes a first film layer 2, a second film layer 3, and a third film layer 4.
  • the third film layer 4 is disposed on the wiring layer 1.
  • the first film layer 2 and the third film layer 4 are arranged adjacent to the bottom of the third film layer 4, and the second film layer 3 is adjacent to the first film layer 2 Set, and located at the bottom 2 of the first film layer.
  • the wiring layer 1 contains a metal film layer (such as the gate layer 15), and the metal film layer interferes and diffracts light, and therefore interferes with the imaging of the camera below the display panel .
  • a metal film layer such as the gate layer 15
  • the wiring layer 1 mainly includes: an active layer 11, a source electrode layer 16 and a drain electrode layer 17, a gate layer 15, a gate insulating layer 14, an interlayer insulating layer 12 and a passivation layer 13.
  • the active layer 11 is disposed on the non-wiring layer 10.
  • the material of the active layer 11 is oxide, and the material of the oxide may be indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium zinc tin oxide (IGZTO), etc., Its thickness is 100-1000 angstroms. In the process of manufacturing the oxide, photolithography of the oxide is required to form the active layer 11.
  • a gate insulating layer 14 is provided on the active layer 11.
  • a gate layer 15 is provided on the gate insulating layer 14.
  • the material of the gate insulating layer 14 is SiOx or SiNx, or a multilayer structure film composed of SiOx and SiOx, with a thickness of 1000-3000 angstroms.
  • the material of the gate layer 7 can be Mo, Al, Cu, Ti, etc., or an alloy, with a thickness of about 2000-10000 Angstrom.
  • An interlayer insulating layer (IDL) 12 is covered on the active layer 11 and the non-wiring layer 10.
  • the material of the interlayer insulating layer 12 is SiOx or SiNx, or is composed of SiOx and SiOx
  • the multi-layer structure of the film has a thickness of 2000 angstroms to 10000 angstroms.
  • a source electrode layer 16 and a drain electrode layer 17 are provided on the interlayer insulating layer 12.
  • the source electrode layer 16 and the drain electrode layer 17 can be made of copper.
  • the non-wiring layer 10 includes: a first film layer 2, a second film layer 3 and a third film layer 4.
  • the non-wiring layer 10 is composed of an inorganic layer, and the inorganic layer may be a glass substrate, but is not limited thereto. For example, it can also be a plastic substrate or a base substrate made of PI material. In addition, the non-wiring layer 10 does not contain a metal film layer.
  • the refractive index of the second film layer 3 is smaller than that of the first film layer 2. This design can make the light from the optically dense medium area (first film layer) to the optically thin medium area (second film layer), and the refraction angle Will be greater than the angle of incidence, so light with a larger angle of incidence will be totally reflected.
  • the advantage of the second embodiment of the present invention is that by providing a combined structure (the first film layer and the second film layer), the light that produces interference and diffraction is emitted from the optically dense medium area (the first film layer) to the optically thinner medium area. (Second film layer), the light with a large incident angle is totally reflected, even if the light with a small incident angle cannot be totally reflected, the refraction angle will increase when the combined structure is adopted, so interference and diffraction can be reduced. The light enters the camera, so that the camera under the screen is not interfered with by interference and diffracted light.
  • FIG. 3 it is a schematic diagram of the structure of the array substrate provided by the third embodiment of the present invention.
  • the non-wiring film layer 10 only includes a first film layer 2 and a second film layer 3.
  • the first film layer 2 is provided at the bottom of the wiring layer 1, and the second film layer
  • the film layer 3 is arranged adjacent to the first film layer 2 and is located at the bottom of the first film layer 2.
  • the third embodiment is the same as the second embodiment above in other features. I won't repeat them here.
  • the advantage of the third embodiment of the present invention is that by providing a combined structure (the first film layer and the second film layer), the light that produces interference and diffraction is emitted from the optically dense medium area (the first film layer) to the optically thinner medium area. (Second film layer), the light with a larger incident angle produces total reflection. Even if the light with a smaller incident angle cannot be totally reflected, the refraction angle will increase when the combined structure is adopted, so that interference and interference can be reduced. The diffracted light enters the camera, so that the camera under the screen is not interfered with by interference and diffracted light.
  • the non-wiring layer 10 of the present invention may also include a variety of situations in addition to the above-mentioned embodiments.
  • the non-wiring layer 10 may also include a first film layer 2, a second film layer 3, and a third film layer. 4.
  • the fourth film layer but not limited to this.
  • a display panel 50 is further provided, which includes the array substrate 40 (dotted area) described in the above embodiment, and the area outside the dotted line is also the array substrate.
  • the specific structure of the array substrate 40 is as described above, and will not be repeated here.
  • an embodiment of the present invention also provides a display device 60, including the display panel 50 in the above embodiment, wherein the display device 60 may be a liquid crystal television TV, a liquid crystal display device (such as a flexible display, High-efficiency displays), mobile phones, digital photo frames, tablet computers and any other products or components with display functions.
  • the display device 60 may be a liquid crystal television TV, a liquid crystal display device (such as a flexible display, High-efficiency displays), mobile phones, digital photo frames, tablet computers and any other products or components with display functions.

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  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

提供一种阵列基板，包括：一走线层（1）；一非走线层（10），位于走线层（1）的底部；非走线层（10）包括一第一膜层（2）和一第二膜层（3），第一膜层（2）和第二膜层（3）沿远离走线层（1）的方向依次层叠设置，第二膜层（3）的折射率小于第一膜层（2）的折射率。还提供一种显示面板。

Description

阵列基板及显示面板
本申请要求于2019年10月08日提交中国专利局、申请号为201910951289.8、发明名称为“阵列基板及显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及显示面板。
 背景技术
高屏占比的电子设备越来越被消费者所青睐。屏占比是指屏幕与电子产品前面板面积的相对比值，它是电子产品外观设计上比较容易获得视觉好感的参数。目前电子产品的状况是屏占比较小，特别是上下边框因听筒、摄像头、HOME键占据了较大的屏占比，导致在外形的前提下，屏占比利用率较低。如何在传统电子产品外形整体尺寸不变的前提下，加大屏占比，减小上下手机边框，以给消费者更好的视觉体验，已成为当前的重要研究方向之一。
 技术问题
为了实现更高屏占比，屏下摄像头是一种可行且有效的方案但是如何实现拍照与显示共存是一项技术难题，尤其是显示面板中存在多种走线，且多种走线形成规律性排布。在高显示密度（PPI）的显示面板中，走线的线宽为微米量级，极为接近可见光的波段，可见光透过显示面板后极容易产生干涉和衍射，对于要求高显示精度的摄像头成像来说，存在极大的干扰风险。因此，如何避免透过光线的干涉、衍射，导致对摄像头的成像造成干扰，是目前急需要解决的重要问题。
 技术解决方案
为了解决上述问题，本发明实施例提供了一种阵列基板及显示面板，能够有效解决光线的干涉和衍射的问题。
本发明实施例提供了一种阵列基板及显示面板，包括：一走线层；一非走线层，位于所述走线层的底部；所述非走线层包括一第一膜层和一第二膜层，所述第一膜层和所述第二膜层沿远离所述走线层的方向依次层叠设置，所述第二膜层的折射率小于第一膜层的折射率。
进一步地，所述第一膜层设置在所述走线层的底部，所述第二膜层与所述第一膜层相邻设置，且位于所述第一膜层的底部。
进一步地，所述非走线膜层还包括第三膜层，所述第三膜层设置在所述非走线层的顶部，所述第一膜层与所述第三膜层相邻设置，且位于所述第三膜层的底部，所述第二膜层与所述第一膜层相邻设置，且位于所述第一膜层的底部。
进一步地，所述非走线膜层还包括第三膜层，所述第一膜层设置在所述非走线层的顶部，所述第二膜层与所述第一膜层相邻设置，且位于所述第一膜层的底部，所述第三膜层与所述第二膜层相邻设置，且位于所述第二膜层的底部。
进一步地，在所述非走线层的最底层上设置一通孔，所述通孔用于增强所述非走线层的透光性。
进一步地，所述通孔所在区域与外部摄像头所在区域相对应。
进一步地，所述第二膜层的材料为氧化硅、氮化硅、氧化铟锡中的一种。
进一步地，所述第二膜层折射率为1.4至2.1。
本发明实施例还提供了一种显示面板，所述显示面板包括上述阵列基板。
 有益效果
本发明的优点在于，通过设置一组合结构（第一膜层和第二膜层），使得产生干涉和衍射的光线从光密介质区（第一膜层）射向光疏介质区（第二膜层），入射角较大的光线产生全反射，并且入射角较小的光线，即使未能够被全反射，通过此组合结构时，折射角也会增大，因此能够减少发生干涉和衍射的光线进入摄像头，使屏下摄像头不受干涉、衍射光干扰成像。另外通过设置通孔，以增加了显示面板的透光性，使得摄像头拍摄效果更好。
 附图说明
图1为本发明实施例一提供的阵列基板结构示意图。
图2为本发明实施例二提供的阵列基板结构示意图。
图3为本发明实施例三提供的阵列基板结构示意图。
图4为本发明实施例提供的走线层结构示意图。
图5为本发明实施例提供的显示面板结构示意图。
图6为本发明实施例提供的显示装置结构示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量，由此限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征，在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
如图1所示，为本发明实施例一提供的阵列基板结构示意图，包括：走线层1和非走线层10。
如图4所示，其中所述走线层1中含有金属膜层（例如栅极层15），所述金属膜层会对光线产生干涉和衍射，因此会干扰在显示面板下方的摄像头进行成像。
所述走线层1主要包括：有源层11、源电极层16和漏电极层17、栅极层15、栅极绝缘层14、层间绝缘层12以及钝化层13。
所述有源层11设置在所述非走线层10上。所述有源层11的材料为氧化物，所述氧化物的材料可以是铟镓锌氧化物（IGZO），铟锌锡氧化物（IZTO），铟镓锌锡氧化物（IGZTO）等等，厚度100-1000埃。在制作所述氧化物的过程中，需对氧化物进行光刻，形成所述有源层11。
在所述有源层11 上设有一层栅极绝缘层14，在所述栅极绝缘层14 上设置一层栅极层15。
其中所述栅极绝缘层14材料为 SiOx 或是 SiNx，或是由 SiOx 和 SiOx 组成的多层结构薄膜，其厚度为1000-3000埃，所述栅极层 7 材料可以为Mo，Al、Cu、Ti 等，或者是合金，厚度 2000-10000埃。
在所述有源层 11 和所述非走线层10上覆盖一层层间绝缘层（IDL）12，所述层间绝缘层12的材料为 SiOx 或是 SiNx，或是由 SiOx 和 SiOx组成的多层结构薄膜，其厚度大约为 2000埃至10000埃。
在所述层间绝缘层 12上设置源电极层16和漏电极层17上。所述源电极层16和漏电极层17可以选用铜材。
在本发明实施例一中，所述非走线层10包括：第一膜层2和第二膜层3和第三膜层4。所述第一膜层2设置在所述走线层1的底部，所述第二膜层3与所述第一膜层2相邻设置，且位于所述第一膜层2底部，所述第三膜层4，与所述第二膜层3相邻设置，且位于第二膜层底部3。
所述非走线层10是由无机层组成。其中，所述无机层可以是玻璃基板，但不限于此。例如也可以为塑料基板，或PI材料制成的衬底基板。另外，所述非走线层10中不含金属膜层。
所述第二膜层3的折射率小于第一膜层2，如此设计，可以使得的光线从光密介质区（第一膜层）射向光疏介质区（第二膜层），折射角会大于入射角，因此入射角较大的光线会产生全反射。
在本实施例中，第三膜层上还设有通孔20，在与所述通孔20对应的位置，且位于所述非走线层10的下方设置摄像头5，所述通孔用于增强所述非走线层10的透光性，使得摄像头5具有更好的拍摄效果。
本发明实施例一的优点在于，通过设置一组合结构（第一膜层和第二膜层），使得产生干涉和衍射的光线从光密介质区（第一膜层）射向光疏介质区（第二膜层），入射角较大的光线产生全反射，因此能够减少发生干涉和衍射的光线进入摄像头，使屏下摄像头不受干涉、衍射光干扰成像。另外，通过设置通孔，以增加了显示面板的透光性，使得摄像头拍摄效果更好。
如图2所示，为本发明实施例二提供的阵列基板结构示意图，包括：走线层1和非走线层10。
在本发明实施例二中，所述非走线膜层10包括第一膜层2和第二膜层3及第三膜层4，所述第三膜层4设置在所述走线层1的底部，所述第一膜层2与所述第三膜层4相邻设置，且位于所述第三膜层4底部，所述第二膜层3与所述第一膜层2相邻设置，且位于第一膜层底部2。
如图4所示，其中所述走线层1中含有金属膜层（例如栅极层15），所述金属膜层会对光线产生干涉和衍射，因此会干扰在显示面板下方的摄像头进行成像。
所述走线层1主要包括：有源层11、源电极层16和漏电极层17、栅极层15、栅极绝缘层14、层间绝缘层12以及钝化层13。
所述有源层11设置在所述非走线层10上。所述有源层11的材料为氧化物，所述氧化物的材料可以是铟镓锌氧化物（IGZO），铟锌锡氧化物（IZTO），铟镓锌锡氧化物（IGZTO）等等，其厚度100-1000埃。在制作所述氧化物的过程中，需对氧化物进行光刻，形成所述有源层11。
在所述有源层11上设有一层栅极绝缘层14。在所述栅极绝缘层14 上设置一层栅极层 15。
所述栅极绝缘层14材料为 SiOx 或是 SiNx，或是由 SiOx 和 SiOx 组成的多层结构薄膜，厚度 1000-3000 埃。所述栅极层 7 材料可以为Mo、Al、Cu、Ti等，或者是合金，其厚度约为2000-10000 埃。
在所述有源层 11 和所述非走线层10上覆盖一层层间绝缘层（IDL）12，所述层间绝缘层 12 的材料为 SiOx或是SiNx，或是由 SiOx和SiOx组成的多层结构薄膜，其厚度为 2000 埃-10000埃。
在所述层间绝缘层 12上设置源电极层16和漏电极层17上。所述源电极层16和漏电极层17可以选用铜材。
在本发明实施例一中，所述非走线层10包括：第一膜层2和第二膜层3和第三膜层4。
所述非走线层10是由无机层组成，所述无机层可以是玻璃基板，但不限于此。例如也可以为塑料基板，或PI材料制成的衬底基板。另外，所述非走线层10中不含金属膜层。
所述第二膜层3的折射率小于第一膜层2，如此设计，可以使得的光线从光密介质区（第一膜层）射向光疏介质区（第二膜层），折射角会大于入射角，因此入射角较大的光线会产生全反射。
本发明实施例二的优点在于，通过设置一组合结构（第一膜层和第二膜层），使得产生干涉和衍射的光线从光密介质区（第一膜层）射向光疏介质区（第二膜层），入射角较大的光线产生全反射，即使入射角较小的光线未能够被全反射，通过此组合结构时，折射角也会增大，因此能够减少发生干涉和衍射的光线进入摄像头，使屏下摄像头不受干涉、衍射光干扰成像。
如图3所示，为本发明实施例三提供的阵列基板结构示意图。
在实施例三中，所述非走线膜层10仅包括第一膜层2和第二膜层3，所述第一膜层2设置在所述走线层1的底部，所述第二膜层3与所述第一膜层2相邻设置，且位于所述第一膜层2底部。实施例三除了此处不同，其余特征与上述实施例二相同。此处不再赘述。
本发明实施例三的优点在于，通过设置一组合结构（第一膜层和第二膜层），使得产生干涉和衍射的光线从光密介质区（第一膜层）射向光疏介质区（第二膜层），入射角较大的光线产生全反射，即使入射角较小的光线，未能够被全反射，通过此组合结构时，折射角也会增大，因此能够减少发生干涉和衍射的光线进入摄像头，使屏下摄像头不受干涉、衍射光干扰成像。
此外，本发明非走线层10除上述实施例所述情况外，还可以包括多种情况，例如非走线层10还可以包括第一膜层2、第二膜层3、第三膜层4、第四膜层，但不限于此。
如图5所示，在本发明的一个实施例中，还提供一种显示面板50，其包括上述实施例中所述的阵列基板40（虚线区域），虚线外的区域亦为阵列基板。所述阵列基板40的具体结构如上文所述，在此不再赘述。
另外，如图6所示，本发明实施例还提供一种显示装置60，包括上述实施例中显示面板50，其中，所述显示装置60可以为液晶电视TV、液晶显示装置（例如柔性显示器、高效显示器）、手机、数码相框、平板电脑等任何具有显示功能的产品或部件。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (9)

  1. 一种阵列基板，其包括：
    一走线层；
    一非走线层，位于所述走线层的底部；
    所述非走线层包括一第一膜层和一第二膜层，所述第一膜层和所述第二膜层沿远离所述走线层的方向依次层叠设置，所述第二膜层的折射率小于第一膜层的折射率。
  2. 如权利要求 1所述的阵列基板，其中所述第一膜层设置在所述走线层的底部，所述第二膜层与所述第一膜层相邻设置，且位于所述第一膜层的底部。
  3. 如权利要求1所述阵列基板，其中所述非走线膜层还包括第三膜层，所述第三膜层设置在所述非走线层的顶部，所述第一膜层与所述第三膜层相邻设置，且位于所述第三膜层的底部，所述第二膜层与所述第一膜层相邻设置，且位于所述第一膜层的底部。
  4. 如权利要求1所述阵列基板，其中所述非走线膜层还包括第三膜层，所述第一膜层设置在所述非走线层的顶部，所述第二膜层与所述第一膜层相邻设置，且位于所述第一膜层的底部，所述第三膜层与所述第二膜层相邻设置，且位于所述第二膜层的底部。
  5. 如权利要求4所述的阵列基板，其中在所述非走线层的最底层上设置一通孔，所述通孔用于增强所述非走线层的透光性。
  6. 如权利要求  5所述的阵列基板，其中所述通孔所在区域与外部摄像头所在区域相对应。
  7. 如权利要求  1所述的阵列基板，其中所述第二膜层的材料为氧化硅、氮化硅、氧化铟锡中的一种。
  8. 如权利要求  1所述的阵列基板，其中所述第二膜层折射率为1.4至2.1。
  9. 一种显示面板，包括权利要求1所述的阵列基板。
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