CN110047813B - 半导体元件 - Google Patents
半导体元件 Download PDFInfo
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- CN110047813B CN110047813B CN201810035168.4A CN201810035168A CN110047813B CN 110047813 B CN110047813 B CN 110047813B CN 201810035168 A CN201810035168 A CN 201810035168A CN 110047813 B CN110047813 B CN 110047813B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000010410 layer Substances 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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Abstract
本发明公开一种半导体元件,其主要包含一第一栅极线以及一第二栅极线沿着一第一方向延伸、一第三栅极线沿着一第二方向延伸并设于第一栅极线以及第二栅极线之间以及一漏极区域设于第三栅极线一侧,其中第三栅极线包含一第一突出部且该第一突出部重叠漏极区域。
Description
技术领域
本发明涉及一种于硅覆绝缘基底上的半导体元件,尤其是涉及一种应用于低噪声放大器(Low Noise Amplifier,LNA)的晶体管结构。
背景技术
随着科技的发展,无线通讯已成为人们生活中相当重要的一环,各种不同电子装置如智能型手机、智能型穿戴装置、平板电脑中通过无线射频系统来传送或接收无线信号。在无线射频系统中,低噪声放大器(Low Noise Amplifier,LNA)与功率放大器(PowerAmplifier,PA)为必要的放大电路。为了使放大电路具有最佳的效能(如线性度),放大电路需要施加以一适当偏压,常见的作法为将放大电路电连接于一偏压模块,利用偏压模块来提供放大电路一适当偏压。
然而于现有技术中,例如低噪声放大器中的晶体管设计在部分参数上包括高栅极阻值、高栅极对基体掺杂区电容值(gate to body capacitance)以及最低噪声指数(minnoise figure)的表现仍不尽理想。由于这些参数在低噪声放大器效能表面上具有举足轻重的影响,因此如何改良现有晶体管架构进而改善这些参数表现即为现今一重要课题。
发明内容
本发明一实施例公开一种半导体元件,其主要包含:一第一栅极线以及一第二栅极线沿着第一方向延伸;一第三栅极线以及一第四栅极线沿着第一方向延伸并设于第一栅极线以及第二栅极线之间;以及一第五栅极线以及一第六栅极线沿着一第二方向延伸,其中第五栅极线以及第六栅极线设于第一栅极线以及第二栅极线之间并交错第三栅极线以及第四栅极线。
本发明另一实施例公开一种半导体元件,其主要包含一第一栅极线以及一第二栅极线沿着一第一方向延伸、一第三栅极线沿着一第二方向延伸并设于第一栅极线以及第二栅极线之间以及一漏极区域设于第三栅极线一侧,其中第三栅极线包含一第一突出部且该第一突出部重叠漏极区域。
附图说明
图1为本发明一实施例的应用于低噪声放大器的一半导体元件的上视图;
图2为本发明一实施例的应用于低噪声放大器的一半导体元件的上视图。
主要元件符号说明
12 基底 14 第一栅极线
16 第二栅极线 18 第三栅极线
20 第四栅极线 22 第五栅极线
24 第六栅极线 26 源极区域
28 第一漏极区域 30 第二漏极区域
32 掺杂区 34 掺杂区
36 掺杂区 38 掺杂区
40 掺杂区 42 掺杂区
44 掺杂区 46 掺杂区
48 掺杂区 50 接触插塞
52 第一金属内连线 54 第二金属内连线
56 第三金属内连线
62 基底 64 第一栅极线
66 第二栅极线 68 第三栅极线
70 第四栅极线 72 第五栅极线
74 第一源极区域 76 第一漏极区域
78 第二源极区域 80 第二漏极区域
82 掺杂区 84 掺杂区
86 掺杂区 88 掺杂区
90 掺杂区 92 掺杂区
94 掺杂区 96 掺杂区
98 突出部 100 突出部
102 突出部 104 接触插塞
106 第一金属内连线 108 第二金属内连线
110 第三金属内连线 112 第四金属内连线
具体实施方式
请参照图1,图1为本发明一实施例的应用于低噪声放大器的一半导体元件的上视图。如图1所示,半导体元件主要包含多条栅极线,包括第一栅极线14、第二栅极线16、第三栅极线18、第四栅极线20、第五栅极线22以及第六栅极线24设于一基底12上,其中基底12较佳为一硅覆绝缘(silicon-on-insulator,SOI)基底,例如可细部包含第一半导体层、一绝缘层设于第一半导体层上以及第二半导体层设于绝缘层上,其中第一半导体层以及第二半导体层可包含例如硅、锗或锗或硅等半导体材料而绝缘层可包含例如氧化硅等绝缘材料。
从细部来看,第一栅极线14以及第二栅极线16沿着第一方向(例如X方向)延伸,第三栅极线18以及第四栅极线20同样沿着第一方向延伸并设于第一栅极线以及第二栅极线之间,第五栅极线22以及第六栅极线24则沿着第二方向(例如Y方向)延伸,其中第五栅极线22以及第六栅极线24设于第一栅极线14以及第二栅极线16之间并交错第三栅极线18以及第四栅极线20。
此外,半导体元件又包含一源极区域26设于第五栅极线22以及第六栅极线24之间,第一漏极区域28设于第五栅极线22一侧以及第二漏极区域30设于第六栅极线24一侧。更具体而言,源极区域26较佳沿着第二方向延伸且更细部包含掺杂区32、掺杂区34以及掺杂区36,其中掺杂区32位于第一栅极线12以及第三栅极线18之间,掺杂区34位于第三栅极线18以及第四栅极线20之间,掺杂区36则位于第二栅极线16以及第四栅极线20之间。如同源极区域26,第一漏极区域28沿着第二方向延伸且更细部包含掺杂区38、掺杂区40以及掺杂区42,其中掺杂区38位于第一栅极线12以及第三栅极线18之间,掺杂区40位于第三栅极线18以及第四栅极线20之间,掺杂区42则位于第二栅极线16以及第四栅极线20之间。另外第二漏极区域30也较佳沿着第二方向延伸且更细部包含掺杂区44、掺杂区46以及掺杂区48,其中掺杂区44位于第一栅极线12以及第三栅极线18之间,掺杂区46位于第三栅极线18以及第四栅极线20之间,掺杂区48则位于第二栅极线16以及第四栅极线20之间。
在本实施例中,第一栅极线12与第三栅极线18之间的掺杂区32、38、44以及第二栅极线16与第四栅极线20之间的掺杂区36、42、48较佳包含相同导电型式或第一导电型式,第三栅极线18以及第四栅极线20之间的掺杂区34、40、46则包含第二导电型式,其中本实施例的第一导电型式较佳为N型而第二导电型式则为P型。但不局限于此,依据本发明其他实施例第一导电型式又可为P型而第二导电型式为N型,此实施例也属本发明所涵盖的范围。
另外本实施例各栅极线或栅极结构,包括第一栅极线14、第二栅极线16、第三栅极线18、第四栅极线20、第五栅极线22以及第六栅极线24均可依据制作工艺需求以先栅极(gate first)制作工艺、后栅极(gate last)制作工艺的先高介电常数介电层(high-kfirst)制作工艺以及后栅极制作工艺的后高介电常数介电层(high-k last)制作工艺等方式制作完成,而为一一体成型的结构。换句话说,各栅极线可依据制作工艺或产品需求为多晶硅所构成的多晶硅栅极线,或可经由金属栅极置换(replacement metal gate,RMG)制作工艺将原本由多晶硅所构成的栅极线转换为金属栅极线,这两种变化型均属本发明所涵盖的范围。由于多晶硅栅极线以及金属栅极线的制作均属本领域所熟知技术,在此不另加赘述。
此外,半导体元件又包含多个接触插塞50设于第一栅极线14、第二栅极线16、源极区域26、第一漏极区域28以及第二漏极区域30。其中接触插塞50的制作可先形成一层间介电层(图未示)于基底12上,然后进行一图案转移制作工艺,例如可利用一图案化掩模去除各栅极线旁的部分的层间介电层以形成多个接触洞(图未示)并暴露出下面的第一栅极线14、第二栅极线16、源极区域26、第一漏极区域28以及第二漏极区域30。随后于各接触洞中填入所需的金属材料,例如包含钛(Ti)、氮化钛(TiN)、钽(Ta)、氮化钽(TaN)等的阻障层材料以及选自钨(W)、铜(Cu)、铝(Al)、钛铝合金(TiAl)、钴钨磷化物(cobalt tungstenphosphide,CoWP)等低电阻材料或其组合的低阻抗金属层。接着进行一平坦化制作工艺,例如以化学机械研磨制作工艺去除部分金属材料以分别形成接触插塞50于各接触洞内电连接第一栅极线14、第二栅极线16、源极区域26、第一漏极区域28以及第二漏极区域30。
之后可进行后续金属内连线制作工艺以于层间介电层上形成金属间介电层(图未示)以及金属内连线分别连接各接触插塞50。在本实施例中,半导体元件主要包含第一金属内连线52沿着第二方向延伸于第五栅极线22以及第六栅极线24之间并电连接源极区域26、第二金属内连线54沿着第二方向延伸于第五栅极线22一侧并电连接第一漏极区域28以及第三金属内连线56沿着第二方向延伸于第六栅极24线一侧并电连接第二漏极区域30,其中第一金属内连线52、第二金属内连线54以及第三金属内连线56交错第三栅极线18以及第四栅极线20。
请再参照图2,图2为本发明一实施例的应用于低噪声放大器的一半导体元件的上视图。如图2所示,半导体元件主要包含多条栅极线,包括第一栅极线64、第二栅极线66、第三栅极线68、第四栅极线70以及第五栅极线72设于一基底62上,其中基底62较佳为一硅覆绝缘(silicon-on-insulator,SOI)基底,例如可细部包含第一半导体层、一绝缘层设于第一半导体层上以及第二半导体层设于绝缘层上,其中第一半导体层以及第二半导体层可包含例如硅、锗或锗或硅等半导体材料而绝缘层可包含例如氧化硅等绝缘材料。
在本实施例中,第一栅极线64以及第二栅极线66沿着第一方向(例如X方向)延伸,第三栅极线68、第四栅极线70以及第五栅极线72则沿着第二方向(例如Y方向)延伸。此外,半导体元件又包含一第一源极区域74设于第三栅极线68一侧,第一漏极区域76设于第三栅极68线以及第四栅极线70之间、第二源极区域78设于第四栅极线70以及第五栅极线72之间以及第二漏极区域80设于第五栅极线72一侧。更具体而言,第一源极区域74较佳沿着第二方向延伸且更细部包含掺杂区82、掺杂区84以及掺杂区86,第一漏极区域76是沿着第二方向延伸且更细部包含掺杂区88,第二源极区域78是沿着第二方向延伸且更细部包含掺杂区90、掺杂区92以及掺杂区94,第二漏极区域80是沿着第二方向延伸且更细部包含掺杂区96。
值得注意的是,第三栅极线68较佳包含一突出部98重叠或覆盖部分第一漏极区域76,第四栅极线70较佳包含一突出部100重叠部分第一漏极区域,且第五栅极线72包含一第一突出部102重叠部分第二漏极区域80。更具体而言,第三栅极线68以及第四栅极线70的突出部98、100较佳为对称设计且第三栅极线68以及第四栅极线70的对称突出部结构可被重复拷贝至左右两侧所有的栅极线。举例来说,本实施例虽仅于第四栅极线70右侧绘示出一条第五栅极线72具有类似的突出部102,但第五栅极线72右侧又可比照第四栅极线70的突出部100态样设置另一条具有与第四栅极线70相同突出部100的第六栅极线(图未示),使第五栅极线72的突出部102以及第六栅极线的突出部同时重叠部分第二漏极区域80。
另外在本实施例中,第一源极区域74的掺杂区82、86、第一漏极区域76的掺杂区88、第二源极区域78的掺杂区90、94以及第二漏极区域80的掺杂区96较佳包含相同导电型式或第一导电型式,第一源极区域74的掺杂区84以及第二源极区域78的掺杂区92则包含第二导电型式,其中本实施例的第一导电型式较佳为N型而第二导电型式则为P型。但不局限于此,依据本发明其他实施例第一导电型式又可为P型而第二导电型式为N型,此实施例也属本发明所涵盖的范围。
如同前述实施例,各栅极线或栅极结构,包括第一栅极线64、第二栅极线66、第三栅极线68、第四栅极线70以及第五栅极线72均可依据制作工艺需求以先栅极(gate first)制作工艺、后栅极(gate last)制作工艺的先高介电常数介电层(high-k first)制作工艺以及后栅极制作工艺的后高介电常数介电层(high-k last)制作工艺等方式制作完成。换句话说,各栅极线可依据制作工艺或产品需求为多晶硅所构成的多晶硅栅极线,或可经由金属栅极置换(replacement metal gate,RMG)制作工艺将原本由多晶硅所构成的栅极线转换为金属栅极线,这两种变化型均属本发明所涵盖的范围。由于多晶硅栅极线以及金属栅极线的制作均属本领域所熟知技术,在此不另加赘述。
此外,半导体元件又包含多个接触插塞104设于第一栅极线64、第二栅极线66、第一源极区域74、第一漏极区域76、第二源极区域78以及第二漏极区域80。其中接触插塞104的制作可先形成一层间介电层(图未示)于基底12上,然后进行一图案转移制作工艺,例如可利用一图案化掩模去除各栅极线旁的部分的层间介电层以形成多个接触洞(图未示)并暴露出下面的源极区域、第一漏极区域20以及第二漏极区域24。随后于各接触洞中填入所需的金属材料,例如包含钛(Ti)、氮化钛(TiN)、钽(Ta)、氮化钽(TaN)等的阻障层材料以及选自钨(W)、铜(Cu)、铝(Al)、钛铝合金(TiAl)、钴钨磷化物(cobalttungsten phosphide,CoWP)等低电阻材料或其组合的低阻抗金属层。接着进行一平坦化制作工艺,例如以化学机械研磨制作工艺去除部分金属材料以分别形成接触插塞104于各接触洞内电连接第一栅极线64、第二栅极线66、第一源极区域74、第一漏极区域76、第二源极区域78以及第二漏极区域80。
之后可进行后续金属内连线制作工艺以于层间介电层上形成金属间介电层(图未示)以及金属内连线分别连接各接触插塞104。在本实施例中,半导体元件主要包含第一金属内连线106沿着第二方向延伸于第三栅极线68以及第四栅极线70之间并电连接第一漏极区域76、第二金属内连线108沿着第二方向延伸于第三栅极线68一侧并电连接第一源极区域74、第三金属内连线110沿着第二方向延伸于第四栅极线70以及第五栅极线72之间并电连接第二源极区域78以及第四金属内连线112沿着第二方向延伸于第五栅极线72一侧并电连接第二漏极区域80。
以上所述仅为本发明的优选实施例,凡依本发明权利要求所做的均等变化与修饰,都应属本发明的涵盖范围。
Claims (5)
1.一种半导体元件,其特征在于,包含:
第一栅极线以及第二栅极线,沿着一第一方向延伸;
第三栅极线以及第四栅极线,沿着该第一方向延伸并设于该第一栅极线以及该第二栅极线之间;
第五栅极线以及第六栅极线,沿着一第二方向延伸,其中该第五栅极线以及该第六栅极线设于该第一栅极线以及该第二栅极线之间并交错该第三栅极线以及该第四栅极线;
第一掺杂区,设于该第一栅极线以及该第三栅极线之间;
第二掺杂区,设于该第二栅极线以及该第四栅极线之间;以及
第三掺杂区,设于该第三栅极线以及该第四栅极线之间,
其中该第一掺杂区以及该第二掺杂区包含相同导电型式,该第一掺杂区以及该第三掺杂区包含不同导电型式,在上视图中,该第三掺杂区的第一边缘与该第三栅极线的边缘重合,且该第三掺杂区的第二边缘于该第四栅极线的边缘重合。
2.如权利要求1所述的半导体元件,另包含:
源极区域,设于该第五栅极线以及该第六栅极线之间;
第一漏极区域,设于该第五栅极线一侧;以及
第二漏极区域,设于该第六栅极线一侧。
3.如权利要求2所述的半导体元件,另包含至少一接触插塞设于该第三栅极线以及该第四栅极线之间的该源极区域、该第一漏极区域以及该第二漏极区域。
4.如权利要求2所述的半导体元件,另包含:
第一金属内连线,沿着该第二方向延伸于该第五栅极线以及该第六栅极线之间并电连接该源极区域;
第二金属内连线,沿着该第二方向延伸于该第五栅极线一侧并电连接该第一漏极区域;以及
第三金属内连线,沿着该第二方向延伸于该第六栅极线一侧并电连接该第二漏极区域。
5.如权利要求4所述的半导体元件,其中该第一金属内连线、该第二金属内连线以及该第三金属内连线交错该第三栅极线以及该第四栅极线。
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Also Published As
Publication number | Publication date |
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US11658118B2 (en) | 2023-05-23 |
US10600734B2 (en) | 2020-03-24 |
US11201115B2 (en) | 2021-12-14 |
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US20190221518A1 (en) | 2019-07-18 |
CN110047813A (zh) | 2019-07-23 |
US20220059459A1 (en) | 2022-02-24 |
CN112968057A (zh) | 2021-06-15 |
US20200144184A1 (en) | 2020-05-07 |
US20190221517A1 (en) | 2019-07-18 |
CN112968057B (zh) | 2024-02-13 |
US11476192B2 (en) | 2022-10-18 |
CN113097177B (zh) | 2023-07-18 |
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