CN109891742B - 具有可编程嵌入式衰减器的多输入放大器 - Google Patents

具有可编程嵌入式衰减器的多输入放大器 Download PDF

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Publication number
CN109891742B
CN109891742B CN201780064472.5A CN201780064472A CN109891742B CN 109891742 B CN109891742 B CN 109891742B CN 201780064472 A CN201780064472 A CN 201780064472A CN 109891742 B CN109891742 B CN 109891742B
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attenuation
signal
stage
amplifier
variable
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CN109891742A (zh
Inventor
J·李
R·D·辛格
J·J·E·M·哈格瑞茨
J·H·崔
B·阿加瓦尔
A·K·帕齐扬娜
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H04B7/0837—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station using pre-detection combining
    • H04B7/0842—Weighted combining
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/10—Gain control characterised by the type of controlled element
    • H03G2201/106—Gain control characterised by the type of controlled element being attenuating element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Networks Using Active Elements (AREA)
CN201780064472.5A 2016-08-30 2017-08-30 具有可编程嵌入式衰减器的多输入放大器 Active CN109891742B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662381262P 2016-08-30 2016-08-30
US62/381,262 2016-08-30
PCT/US2017/049324 WO2018045002A1 (en) 2016-08-30 2017-08-30 Multi-input amplifier with programmable embedded attenuators

Publications (2)

Publication Number Publication Date
CN109891742A CN109891742A (zh) 2019-06-14
CN109891742B true CN109891742B (zh) 2024-04-05

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Country Link
US (3) US10348262B2 (enExample)
JP (1) JP6853362B2 (enExample)
KR (2) KR102686862B1 (enExample)
CN (1) CN109891742B (enExample)
DE (1) DE112017004355B4 (enExample)
GB (3) GB2605544B (enExample)
SG (2) SG11201901804PA (enExample)
TW (3) TWI757327B (enExample)
WO (1) WO2018045002A1 (enExample)

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CN110658443B (zh) * 2019-10-21 2021-03-26 浙江大学 一种针对射频前端器件的老练系统
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KR102540949B1 (ko) * 2021-09-17 2023-06-07 주식회사 퀄리타스반도체 펄스 진폭 변조 신호의 선형성을 향상시키는 pam 신호 처리 회로 및 이를 포함하는 통신 장치
CN114244297A (zh) * 2021-12-20 2022-03-25 上海迦美信芯通讯技术有限公司 一种改进增益衰减方案的多增益控制低噪声放大器
CN114189222A (zh) * 2021-12-20 2022-03-15 上海迦美信芯通讯技术有限公司 一种改进相位跳变的多增益控制低噪声放大器
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CN115441839A (zh) * 2022-09-16 2022-12-06 深圳飞骧科技股份有限公司 多频段低噪声放大器、集成电路芯片及电子设备
CN115208338A (zh) * 2022-09-16 2022-10-18 深圳飞骧科技股份有限公司 多频段低噪声放大器及通信设备
CN115296620B (zh) * 2022-09-29 2022-12-30 深圳飞骧科技股份有限公司 多频段可调增益的低噪声放大器
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KR102552581B1 (ko) 2023-07-07
KR20230107705A (ko) 2023-07-17
DE112017004355B4 (de) 2025-07-10
TWI811975B (zh) 2023-08-11
SG11201901804PA (en) 2019-03-28
DE112017004355T8 (de) 2019-06-27
US10348262B2 (en) 2019-07-09
GB2569714A (en) 2019-06-26
GB2605544B (en) 2023-01-11
CN109891742A (zh) 2019-06-14
JP2019525692A (ja) 2019-09-05
TWI811976B (zh) 2023-08-11
US20180062600A1 (en) 2018-03-01
US20200007102A1 (en) 2020-01-02
GB201904241D0 (en) 2019-05-08
GB2605112A (en) 2022-09-21
JP6853362B2 (ja) 2021-03-31
KR20190047712A (ko) 2019-05-08
US20210111685A1 (en) 2021-04-15
GB202209234D0 (en) 2022-08-10
US11329621B2 (en) 2022-05-10
GB2605544A (en) 2022-10-05
GB202209233D0 (en) 2022-08-10
GB2605112B (en) 2023-01-11
GB2569714B (en) 2022-11-16
US10797668B2 (en) 2020-10-06
TW201822463A (zh) 2018-06-16
WO2018045002A1 (en) 2018-03-08
SG10202008216RA (en) 2020-09-29
DE112017004355T5 (de) 2019-05-09
TW202230964A (zh) 2022-08-01
TW202230965A (zh) 2022-08-01
TWI757327B (zh) 2022-03-11
KR102686862B1 (ko) 2024-07-22

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