SG11201901804PA - Multi-input amplifier with programmable embedded attenuators - Google Patents

Multi-input amplifier with programmable embedded attenuators

Info

Publication number
SG11201901804PA
SG11201901804PA SG11201901804PA SG11201901804PA SG11201901804PA SG 11201901804P A SG11201901804P A SG 11201901804PA SG 11201901804P A SG11201901804P A SG 11201901804PA SG 11201901804P A SG11201901804P A SG 11201901804PA SG 11201901804P A SG11201901804P A SG 11201901804PA
Authority
SG
Singapore
Prior art keywords
input amplifier
programmable embedded
attenuators
embedded attenuators
programmable
Prior art date
Application number
SG11201901804PA
Other languages
English (en)
Inventor
Junhyung Lee
Rimal Deep Singh
Johannes Jacobus Emile Maria Hageraats
Joshua Haeseok Cho
Bipul Agarwal
Aravind Kumar Padyana
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG11201901804PA publication Critical patent/SG11201901804PA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H04B7/0837—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station using pre-detection combining
    • H04B7/0842—Weighted combining
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/10—Gain control characterised by the type of controlled element
    • H03G2201/106—Gain control characterised by the type of controlled element being attenuating element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Networks Using Active Elements (AREA)
SG11201901804PA 2016-08-30 2017-08-30 Multi-input amplifier with programmable embedded attenuators SG11201901804PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662381262P 2016-08-30 2016-08-30
PCT/US2017/049324 WO2018045002A1 (en) 2016-08-30 2017-08-30 Multi-input amplifier with programmable embedded attenuators

Publications (1)

Publication Number Publication Date
SG11201901804PA true SG11201901804PA (en) 2019-03-28

Family

ID=61243617

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201901804PA SG11201901804PA (en) 2016-08-30 2017-08-30 Multi-input amplifier with programmable embedded attenuators
SG10202008216RA SG10202008216RA (en) 2016-08-30 2017-08-30 Multi-input amplifier with programmable embedded attenuators

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202008216RA SG10202008216RA (en) 2016-08-30 2017-08-30 Multi-input amplifier with programmable embedded attenuators

Country Status (9)

Country Link
US (3) US10348262B2 (enExample)
JP (1) JP6853362B2 (enExample)
KR (2) KR102686862B1 (enExample)
CN (1) CN109891742B (enExample)
DE (1) DE112017004355B4 (enExample)
GB (3) GB2605112B (enExample)
SG (2) SG11201901804PA (enExample)
TW (3) TWI811975B (enExample)
WO (1) WO2018045002A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110048749B (zh) 2014-08-18 2021-08-31 松下电器产业株式会社 多输入多输出训练方法及无线装置
SG11201901804PA (en) * 2016-08-30 2019-03-28 Skyworks Solutions Inc Multi-input amplifier with programmable embedded attenuators
SG11201901799UA (en) * 2016-08-31 2019-03-28 Skyworks Solutions Inc Multi-input amplifier with degeneration switching block and low loss bypass function
US20180091108A1 (en) * 2016-09-28 2018-03-29 Qualcomm Incorporated Optimization for energy efficient multi-channel communication with shared lna structure
FR3065339B1 (fr) * 2017-04-13 2019-07-05 Stmicroelectronics Sa Ligne de transmission avec dispositif de limitation des pertes par desadaptation
JP7148056B2 (ja) * 2018-05-08 2022-10-05 日清紡マイクロデバイス株式会社 利得可変型増幅器
US10496587B1 (en) * 2018-06-27 2019-12-03 Integrated Device Technology, Inc. Wide programmable gain receiver data path for single-ended memory interface application
JP6937272B2 (ja) * 2018-06-29 2021-09-22 株式会社東芝 高周波増幅回路
CN110798266B (zh) * 2018-08-03 2024-07-26 上海欣诺通信技术股份有限公司 分光装置及计算机存储介质
US10951252B2 (en) 2019-01-08 2021-03-16 Psemi Corporation 5G NR configurable wideband RF front-end LNA
US10700650B1 (en) * 2019-01-08 2020-06-30 Psemi Corporation Configurable wideband split LNA
CN113366759A (zh) 2019-01-08 2021-09-07 派赛公司 可配置的宽带分裂lna
US11469725B2 (en) 2019-06-07 2022-10-11 Skyworks Solutions, Inc. Apparatus and methods for power amplifier output matching
KR102756602B1 (ko) * 2019-09-17 2025-01-21 한국전자통신연구원 초고주파 증폭 회로
US11159130B2 (en) 2019-09-17 2021-10-26 Psemi Corporation Ruggedness protection circuit
US11239803B2 (en) * 2019-09-17 2022-02-01 Psemi Corporation Ruggedness protection circuit
CN110658443B (zh) * 2019-10-21 2021-03-26 浙江大学 一种针对射频前端器件的老练系统
US11218123B2 (en) * 2020-03-12 2022-01-04 Texas Instruments Incorporated Chopper stabilized attenuation for sense amplifiers
KR102540949B1 (ko) 2021-09-17 2023-06-07 주식회사 퀄리타스반도체 펄스 진폭 변조 신호의 선형성을 향상시키는 pam 신호 처리 회로 및 이를 포함하는 통신 장치
CN114244297A (zh) * 2021-12-20 2022-03-25 上海迦美信芯通讯技术有限公司 一种改进增益衰减方案的多增益控制低噪声放大器
CN114189222A (zh) * 2021-12-20 2022-03-15 上海迦美信芯通讯技术有限公司 一种改进相位跳变的多增益控制低噪声放大器
US20230336206A1 (en) * 2022-04-13 2023-10-19 Skyworks Solutions, Inc. Switch module with shunt switches
CN115441839A (zh) * 2022-09-16 2022-12-06 深圳飞骧科技股份有限公司 多频段低噪声放大器、集成电路芯片及电子设备
CN115208338A (zh) * 2022-09-16 2022-10-18 深圳飞骧科技股份有限公司 多频段低噪声放大器及通信设备
CN115296620B (zh) * 2022-09-29 2022-12-30 深圳飞骧科技股份有限公司 多频段可调增益的低噪声放大器
KR20240174249A (ko) * 2023-06-08 2024-12-17 삼성전기주식회사 Rf 스위치 회로

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09312539A (ja) * 1996-05-21 1997-12-02 Matsushita Electric Ind Co Ltd 受信アッテネータ回路
JP3352929B2 (ja) * 1997-12-12 2002-12-03 三菱電機株式会社 フィードフォワード増幅器
US6349200B1 (en) * 1997-12-24 2002-02-19 Transcept, Inc. Monitoring and command system for transceivers used to inter-connect wireless telephones to a broadband network
JPH11312938A (ja) * 1998-04-28 1999-11-09 Matsushita Electric Ind Co Ltd Ａｇｃ回路と受信装置
US6900931B1 (en) * 2000-10-02 2005-05-31 Ciena Corporation Three-stage optical amplifier having flat spectral gain
JP2003324327A (ja) * 2002-05-02 2003-11-14 Toshiba Techno Network Kk 利得切換スイッチ付き増幅器
US20040197105A1 (en) * 2003-02-14 2004-10-07 Jds Uniphase Corporation Variable gain multi-stage optical amplifier
JP2004328425A (ja) * 2003-04-25 2004-11-18 Sharp Corp 可変利得増幅器
KR20080058335A (ko) * 2005-08-12 2008-06-25 맥스리니어 인코포레이티드 넓은 동적 범위를 갖는 증폭기의 이득 제어
JP4354465B2 (ja) * 2006-03-24 2009-10-28 シャープ株式会社 可変利得増幅器及びこの可変利得増幅器を備えた通信装置
JP2007295146A (ja) * 2006-04-24 2007-11-08 Niigata Seimitsu Kk 自動利得制御回路および低雑音増幅回路
GB2440188B (en) * 2006-07-14 2011-06-08 Wolfson Ltd Amplifier Circuits, Methods of Starting and Stopping Amplifier Circuits
US7560986B2 (en) * 2006-08-25 2009-07-14 Broadcom Corporation Variable gain amplifier and method for achieving variable gain amplification with high bandwidth and linearity
EP1965504B1 (en) * 2007-02-27 2015-08-19 Alcatel Lucent Integrated circuit and method for reception of radio frequency signals
CN101784904A (zh) * 2007-08-16 2010-07-21 Nxp股份有限公司 带有rf模块的集成电路、具有这种ic的电子设备和用于测试这种模块的方法
US7868681B2 (en) * 2007-10-30 2011-01-11 Qualcomm, Incorporated Programmable gain circuit
JP2009239794A (ja) * 2008-03-28 2009-10-15 Nippon Telegr & Teleph Corp <Ntt> 多段可変利得増幅器
DE102008048986B4 (de) * 2008-09-25 2019-03-14 Atmel Corp. Antennenverstärker und Empfangssystem
US8971830B2 (en) * 2009-05-12 2015-03-03 Qualcomm Incorporated Multi-mode multi-band power amplifier module
US8295212B2 (en) * 2009-08-05 2012-10-23 Alcatel Lucent System and method for TDD/TMA with hybrid bypass switch of receiving amplifier
JP5526241B2 (ja) * 2010-02-04 2014-06-18 エプコス アクチエンゲゼルシャフト 信号感知のための増幅回路および方法
KR101250720B1 (ko) * 2010-12-21 2013-04-03 삼성전기주식회사 안테나 스위치 회로 및 그 스위칭 방법
EP2490332A1 (en) * 2011-02-16 2012-08-22 Nxp B.V. A variable gain amplifier
EP2557687B1 (en) 2011-08-11 2018-06-13 Telefonaktiebolaget LM Ericsson (publ) Low-noise amplifier, receiver, method and computer program
US8442465B2 (en) * 2011-09-27 2013-05-14 Rf Micro Devices, Inc. Switched capacitor detuner for low noise amplification circuit having bypass path
US20140011461A1 (en) * 2012-07-03 2014-01-09 Infineon Technologies Ag System and Method for Attenuating a Signal in a Radio Frequency System
US8913976B2 (en) * 2012-10-23 2014-12-16 Qualcomm Incorporated Amplifiers with shunt switches
JPWO2014080586A1 (ja) * 2012-11-22 2017-01-05 パナソニックＩｐマネジメント株式会社 可変利得増幅器、およびこれを備えたチューナシステム
US9059665B2 (en) * 2013-02-22 2015-06-16 Qualcomm Incorporated Amplifiers with multiple outputs and configurable degeneration inductor
US9473194B2 (en) * 2014-02-27 2016-10-18 Skywoods Solutions, Inc. Systems, devices and methods related to radio-frequency step attenuators
JP2015171081A (ja) * 2014-03-10 2015-09-28 日本電気株式会社 可変利得増幅器、それを用いた送信機および制御方法
US9515645B2 (en) * 2014-06-03 2016-12-06 Infineon Technologies Ag System and method for a radio frequency switch
JP6259742B2 (ja) * 2014-09-17 2018-01-10 アンリツ株式会社 試験装置及びその校正方法
US10050694B2 (en) * 2014-10-31 2018-08-14 Skyworks Solution, Inc. Diversity receiver front end system with post-amplifier filters
US9893752B2 (en) * 2014-10-31 2018-02-13 Skyworks Solutions, Inc. Diversity receiver front end system with variable-gain amplifiers
CN204334539U (zh) * 2015-01-30 2015-05-13 深圳市极致汇仪科技有限公司 宽带射频反射隔离器
CN104917475B (zh) * 2015-02-15 2017-12-08 上海唯捷创芯电子技术有限公司 一种可调增益功率放大器、增益调节方法及移动终端
US20160248400A1 (en) * 2015-02-25 2016-08-25 Analog Devices, Inc. Apparatus and methods for radio frequency switching
US9748993B2 (en) * 2015-09-08 2017-08-29 Mediatek Inc. Radio frequency receiver front-end with gain control capability as well as improved impedance matching control capability
US10033421B2 (en) * 2016-05-31 2018-07-24 Silicon Laboratories Inc. Multi-standard, multi-channel expandable TV/satellite receiver
GB2551205B (en) * 2016-06-10 2020-05-06 Etl Systems Ltd A self-optimising RF amplifier
SG11201901804PA (en) * 2016-08-30 2019-03-28 Skyworks Solutions Inc Multi-input amplifier with programmable embedded attenuators

Also Published As

Publication number Publication date
GB2605112B (en) 2023-01-11
DE112017004355T8 (de) 2019-06-27
DE112017004355B4 (de) 2025-07-10
JP2019525692A (ja) 2019-09-05
KR20230107705A (ko) 2023-07-17
DE112017004355T5 (de) 2019-05-09
GB2569714B (en) 2022-11-16
TW202230965A (zh) 2022-08-01
GB2569714A (en) 2019-06-26
KR102552581B1 (ko) 2023-07-07
US11329621B2 (en) 2022-05-10
US10797668B2 (en) 2020-10-06
TWI811976B (zh) 2023-08-11
US20210111685A1 (en) 2021-04-15
SG10202008216RA (en) 2020-09-29
KR20190047712A (ko) 2019-05-08
GB202209234D0 (en) 2022-08-10
KR102686862B1 (ko) 2024-07-22
TWI811975B (zh) 2023-08-11
US20200007102A1 (en) 2020-01-02
WO2018045002A1 (en) 2018-03-08
CN109891742B (zh) 2024-04-05
CN109891742A (zh) 2019-06-14
GB201904241D0 (en) 2019-05-08
GB202209233D0 (en) 2022-08-10
GB2605544B (en) 2023-01-11
US20180062600A1 (en) 2018-03-01
GB2605544A (en) 2022-10-05
TW201822463A (zh) 2018-06-16
JP6853362B2 (ja) 2021-03-31
TWI757327B (zh) 2022-03-11
GB2605112A (en) 2022-09-21
TW202230964A (zh) 2022-08-01
US10348262B2 (en) 2019-07-09

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