TWI757327B - 具有可程式化嵌入式衰減器之多輸入放大器 - Google Patents

具有可程式化嵌入式衰減器之多輸入放大器 Download PDF

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Publication number
TWI757327B
TWI757327B TW106129590A TW106129590A TWI757327B TW I757327 B TWI757327 B TW I757327B TW 106129590 A TW106129590 A TW 106129590A TW 106129590 A TW106129590 A TW 106129590A TW I757327 B TWI757327 B TW I757327B
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Taiwan
Prior art keywords
attenuation
signal
stage
amplifier
variable
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TW106129590A
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English (en)
Chinese (zh)
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TW201822463A (zh
Inventor
俊勇 李
利莫 迪普 辛何
喬翰納斯 賈寇柏斯 艾蜜莉 瑪麗亞 哈吉雷特
約書亞 海少克 卓
比伯 阿葛沃
阿拉賓德 庫瑪 帕德亞納
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美商天工方案公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H04B7/0837—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station using pre-detection combining
    • H04B7/0842—Weighted combining
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/10—Gain control characterised by the type of controlled element
    • H03G2201/106—Gain control characterised by the type of controlled element being attenuating element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Networks Using Active Elements (AREA)
TW106129590A 2016-08-30 2017-08-30 具有可程式化嵌入式衰減器之多輸入放大器 TWI757327B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662381262P 2016-08-30 2016-08-30
US62/381,262 2016-08-30

Publications (2)

Publication Number Publication Date
TW201822463A TW201822463A (zh) 2018-06-16
TWI757327B true TWI757327B (zh) 2022-03-11

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TW106129590A TWI757327B (zh) 2016-08-30 2017-08-30 具有可程式化嵌入式衰減器之多輸入放大器
TW111103508A TWI811976B (zh) 2016-08-30 2017-08-30 具有可程式化嵌入式衰減器之多輸入放大器
TW111103507A TWI811975B (zh) 2016-08-30 2017-08-30 具有可程式化嵌入式衰減器之多輸入放大器

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TW111103507A TWI811975B (zh) 2016-08-30 2017-08-30 具有可程式化嵌入式衰減器之多輸入放大器

Country Status (9)

Country Link
US (3) US10348262B2 (enExample)
JP (1) JP6853362B2 (enExample)
KR (2) KR102686862B1 (enExample)
CN (1) CN109891742B (enExample)
DE (1) DE112017004355B4 (enExample)
GB (3) GB2569714B (enExample)
SG (2) SG11201901804PA (enExample)
TW (3) TWI757327B (enExample)
WO (1) WO2018045002A1 (enExample)

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CN114244297A (zh) * 2021-12-20 2022-03-25 上海迦美信芯通讯技术有限公司 一种改进增益衰减方案的多增益控制低噪声放大器
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KR102686862B1 (ko) 2024-07-22
TW202230964A (zh) 2022-08-01
GB2569714A (en) 2019-06-26
TW202230965A (zh) 2022-08-01
GB201904241D0 (en) 2019-05-08
SG11201901804PA (en) 2019-03-28
DE112017004355T8 (de) 2019-06-27
KR102552581B1 (ko) 2023-07-07
KR20190047712A (ko) 2019-05-08
WO2018045002A1 (en) 2018-03-08
US11329621B2 (en) 2022-05-10
KR20230107705A (ko) 2023-07-17
GB2605112A (en) 2022-09-21
US20210111685A1 (en) 2021-04-15
CN109891742B (zh) 2024-04-05
DE112017004355T5 (de) 2019-05-09
GB2569714B (en) 2022-11-16
TWI811975B (zh) 2023-08-11
GB2605544A (en) 2022-10-05
SG10202008216RA (en) 2020-09-29
US10348262B2 (en) 2019-07-09
US20180062600A1 (en) 2018-03-01
GB202209233D0 (en) 2022-08-10
GB2605112B (en) 2023-01-11
US20200007102A1 (en) 2020-01-02
JP2019525692A (ja) 2019-09-05
US10797668B2 (en) 2020-10-06
GB2605544B (en) 2023-01-11
TW201822463A (zh) 2018-06-16
DE112017004355B4 (de) 2025-07-10
JP6853362B2 (ja) 2021-03-31
GB202209234D0 (en) 2022-08-10
CN109891742A (zh) 2019-06-14
TWI811976B (zh) 2023-08-11

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