CN109891564B - 对半导体基板进行湿处理的装置和方法 - Google Patents
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Abstract
本发明揭示了一种对半导体基板进行湿处理的装置和方法。装置包括:工艺腔室(1005)、设置在工艺腔室内保持半导体基板(1001)的卡盘(1002)、驱动卡盘旋转的旋转驱动器(1004)、包围工艺腔室的腔室护罩(1006)、至少一个竖直驱动器驱动腔室护罩上下移动、保护罩(1007)、至少一个驱动装置(1008)驱动保护罩向下遮盖或向上举起、至少一个分配器组件(1014),具有向半导体基板表面喷射液体的分配器(1030)。当保护罩向下遮盖工艺腔室时,腔室护罩向上移动与保护罩配合,密封工艺腔室,防止液体飞溅出工艺腔室。
Description
技术领域
本发明涉及一种对半导体基板进行湿处理的装置和方法,利用高压分配器组件喷射高压液体到半导体基板上。
背景技术
在半导体器件制造过程中,高压液体,例如化学液或去离子水等,被喷射到半导体基板上以进行湿处理,如清洗,刻蚀,光阻剥离,金属剥离等。当高压液体以高达80-3000psi的压力喷射到半导体基板上时,高压液体通常会产生严重的液体飞溅和液体喷雾。飞溅的化学液或去离子水会带来腐蚀和污染的问题,以及损坏半导体基板加工腔室附近零部件的功能。飞溅的化学液或去离子水也会影响后续的处理半导体基板的湿处理步骤和干燥步骤。
发明内容
因此,本发明的主旨是提供一种高压液体被均匀喷射到半导体基板上时,防止高压液体飞溅出工艺腔室的装置和方法。
在本发明的一个实施方案中,提出的对半导体基板进行湿处理的装置,包括工艺腔室、设置在工艺腔室内保持半导体基板的卡盘、驱动卡盘旋转的旋转驱动器、包围工艺腔室的腔室护罩、至少一个驱动腔室护罩上下移动的竖直驱动器、保护罩、至少一个使保护罩向下遮盖或向上举起的驱动装置、至少一个安装在保护罩上的高压分配器组件,该高压分配器组件具有一个将高压液体喷射到半导体基板表面上的高压分配器。当保护罩向下遮盖工艺腔室时,腔室护罩向上移动与保护罩配合,密封工艺腔室,防止高压液体飞溅出工艺腔室。
在本发明的一个实施方案中,提出的对半导体基板进行湿处理的方法,包括:
向下移动腔室护罩,将半导体基板放置在卡盘上,向上移动腔室护罩,使半导体基板旋转;
使摆动喷嘴旋转进入工艺腔室向半导体基板表面喷洒清洗化学液或去离子水;
停止向半导体基板表面喷洒清洗化学液或去离子水,使摆动喷嘴旋转离开工艺腔室,然后向下移动腔室护罩;
使保护罩向下遮盖工艺腔室;
向上移动腔室护罩使其与保护罩配合密封工艺腔室,然后向半导体基板表面喷射高压化学液或去离子水;
停止向半导体基板表面喷射高压化学液或去离子水,然后向下移动腔室护罩;
使保护罩向上举起;
向上移动腔室护罩,然后使摆动喷嘴旋转进入工艺腔室向半导体基板的表面喷洒清洗化学液或去离子水;
干燥半导体基板;
使摆动喷嘴旋转离开工艺腔室,停止旋转半导体基板,向下移动腔室护罩,然后从卡盘上取走半导体基板。
附图说明
图1揭示了本发明对半导体基板进行湿处理的装置的侧视图,其中,保护罩向下遮盖密封工艺腔室。
图2揭示了图1所示装置的顶视图。
图3揭示了保护罩向上举起的侧视图。
图4揭示了图3所示装置的顶视图。
图5揭示了根据本发明一个实施例的高压分配器组件的侧视图。
图6揭示了根据本发明又一个实施例的高压分配器组件的侧视图。
图7A至图7H揭示了使用该装置对半导体基板进行湿处理的工艺步骤的侧视图。
具体实施方式
本发明提出一种对半导体基板进行湿处理的装置,利用保护罩和腔室护罩配合来密封工艺腔室,当高压液体通过高压分配器组件均匀喷射到半导体基板上时,防止高压液体飞溅出工艺腔室。
参考图1至图4所示,本发明提出的对半导体基板进行湿处理的一个示范性装置包括工艺腔室1005以及包围工艺腔室1005的腔室护罩1006。腔室护罩1006与至少一个竖直驱动器连接,该至少一个竖直驱动器驱动腔室护罩1006上下移动。适于保持半导体基板1001的卡盘1002设置在工艺腔室1005内。卡盘1002通过旋转轴1003与旋转驱动器1004连接。旋转驱动器1004驱动卡盘1002旋转。该装置进一步包括保护罩1007。至少一个高压分配器组件1014安装在保护罩1007上。每一个高压分配器组件1014具有一个高压分配器1030,该高压分配器1030以10-5000psi的压力向半导体基板1001的表面喷射高压液体,化学液或去离子水中的一种。高压分配器组件1014包括线性致动器1013,该线性致动器1013控制高压分配器1030的扫描移动,因此当卡盘1002以20-3000rpm的速度旋转时,从半导体基板1001的中心到边缘,高压液体,化学液或去离子水被均匀地喷射到半导体基板1001的表面。
至少一个驱动装置驱动保护罩1007向下遮盖或向上举起。在一个实施例中,保护罩1007被固定在横梁1024上。横梁1024的两端连接两个臂1012a,1012b。一对驱动装置1008a,1008b驱动该两条臂1012a,1012b使保护罩1007向下遮盖或向上举起。保护罩1007上设置有至少一个排液孔1016,一旦保护罩1007向上举起时,从该至少一个排液孔1016排出液体。当保护罩1007向上举起时,排液孔1016位于保护罩1007的底部。以这种方式,溅落在保护罩1007顶部的液体将因重力而飘降至排液孔1016。排液托盘1017适于引导从排液孔1016排出的液体顺流而下,使液体排出保护罩1007。至少有一个清洗喷嘴安装在保护罩1007上用来清洗保护罩1007。在一个实施例中,有三个清洗喷嘴1036a,1036b,1036c被安装在保护罩1007上,清洗保护罩1007。当保护罩1007被向上举起时,至少有一个清洗喷嘴1036a,1036b,1036c位于保护罩1007顶部位置,向保护罩1007的内表面喷洒清洗化学液或去离子水,清洗保护罩1007。清洗化学液或去离子水因重力沿着保护罩1007的内表面向下流动,并通过排液孔1016排出。清洗喷嘴1036a,1036b,1036c呈一定角度安装,防止清洗化学液或去离子水喷射到腔室护罩1006内部。保护罩1007的顶部截面呈斜坡状或弧状以将液体引导至工艺腔室1005。清洗喷嘴1036a,1036b,1036c的喷洒持续时间是可编程控制的。保护罩1007的清洗触发条件是基于处理半导体基板1001的数量或时间累积而可编程控制。
至少有一个摆动喷嘴1018被安装在工艺腔室1005旁边来传送液体,例如化学液或去离子水,或者干燥气体到半导体基板1001表面。旋转致动器1020驱动摆动喷嘴1018旋转,因此摆动喷嘴1018能够旋转进入工艺腔室1005并能扫描经过半导体基板1001的整个表面。
参考图1至图2所示,当使用该装置对半导体基板1001进行湿处理,例如清洗,刻蚀,光阻剥离,金属剥离等,半导体基板1001放置在卡盘1002上。旋转驱动器1004驱动卡盘1002以20-3000rpm的速度旋转。驱动装置1008a,1008b驱动保护罩1007向下遮盖工艺腔室1005。然后使腔室护罩1006向上移动。由保护罩1007和腔室护罩1006的配合来密封工艺腔室1005,防止喷射到半导体基板1001表面上的高压化学液或去离子水飞溅出工艺腔室1005。高压化学液或去离子水通过高压分配器组件1014的高压分配器1030以10-5000psi的压力喷射到半导体基板1001的表面。半导体基板1001的高压处理结束后,如图3至图4所示,使腔室护罩1006向下移动。之后由驱动装置1008a,1008b使保护罩1007向上举起。保护罩1007位于工艺腔室1005的旁边。随后,使腔室护罩1006向上移动,然后旋转致动器1020驱动摆动喷嘴1018移动进入工艺腔室1005以向半导体基板1001的表面喷化学液或去离子水,或者干燥气体。当保护罩1007向下遮盖工艺腔室1005或向上举起并位于工艺腔室1005的旁边时,腔室护罩1006位于工艺腔室1005下方位置,因此有足够的空间便于保护罩1007移动。
参考图5所示,揭示了根据本发明的一个实施例的高压分配器组件。高压分配器组件3014安装在保护罩3007上。高压分配器组件3014包括高压分配器3030。高压分配器3030安装在安装座3031上,该安装座3031被固定在摆臂3032的一端。高压分配器组件3014包括线性致动器3013,线性致动器3013控制高压分配器3030的扫描运动。具体地,线性致动器3013驱动摆臂3032绕轴3033旋转从θ1旋转到θ2。如图5所示,如果线性致动器3013使摆臂3032旋转θ1角度时,高压分配器3030将液体喷射到半导体基板3001的中心。如果线性致动器3013使摆臂3032摆动至θ2处时,高压分配器3030将液体喷射到半导体基板3001的边缘。采取这种方式,当旋转驱动器3004驱动卡盘3002旋转时,在摆臂3032从θ1摆动至θ2的过程中,从半导体基板3001的中心到边缘,高压液体被均匀地喷射到半导体基板3001。高压分配器3030与半导体基板3001表面之间的距离“d”能够通过调节摆臂3032的长度来调节。高压分配器3030通过快速连接的方式被安装在安装座3031上,因而高压分配器3030能够容易地更换成想要的高压分配器。使用不同类型的高压分配器3030,高压分配器3030喷射出的液体形状能够选择圆锥状,柱状或扇状。管路3034与高压分配器3030连接以向高压分配器3030供应高压化学液或去离子水。压力计3039设置在管路3034上来控制压力在10-5000psi的范围。流量计3043设置在管路3034上来控制流量。开关阀3038设置在管路3034上来控制高压液体的供应。另一管路3040与清洗喷嘴3036连接以向清洗喷嘴3036供应清洗化学液或去离子水来清洗保护罩3007的内表面。另一个流量计3044设置在管路3040上以控制流量。另一个开关阀3041设置在管路3040上以控制清洗化学液或去离子水的供应。
参考图6所示,揭示了根据本发明的又一个实施例的高压分配器组件。高压分配器组件5014安装在保护罩5007上。高压分配器组件5014包括高压分配器5030。高压分配器5030安装在安装座5031上,该安装座5031固定在杆5034的一端。高压分配器组件5014包括线性致动器5013,该线性致动器5013适于控制高压分配器5030的扫描运动。具体地,线性致动器5013驱动杆5034沿着轴5033移动L1至L2。如果线性致动器5013驱动杆5034移动L1时,高压分配器5030将液体喷射到半导体基板5001的中心。如果线性致动器5013驱动杆5034移动L2时,高压分配器5030将液体喷射到半导体基板5001的边缘。采取这种方式,当旋转驱动器5004驱动卡盘5002旋转时,在杆5034移动L1至L2的过程中,从半导体基板5001的中心到边缘,高压液体被均匀地喷射到半导体基板5001的表面。高压分配器5030和半导体基板5001之间的距离“d”能通过调节杆5034的长度来调节。高压分配器5030以快速连接的方式安装在安装座5031上,因而高压分配器5030能容易地更换成想要的高压分配器。使用不同类型的高压分配器5030,高压分配器5030喷射出的液体形状能够选择圆锥状,柱状或扇状。管路5034与高压分配器5030连接以向高压分配器5030供应高压化学液或去离子水。压力计5039安装在管路5034上以控制压力在10-5000psi的范围。流量计5043安装在管路5034上以控制流量。开关阀5038安装在管路5034上以控制高压液体的供应。另一管路5040与清洗喷嘴5036连接以向清洗喷嘴5036供应清洗化学液或去离子水,以此来清洗保护罩5007的内表面。另一个流量计5044安装在管路5040上以控制流量。另一个开关阀5041安装在管路5040上以控制清洗化学液或去离子水的供应。
相应地,本发明还提出一种对半导体基板进行湿处理的方法,该方法利用保护罩和腔室护罩的配合密封工艺腔室,防止高压液体在通过高压分配器组件的高压分配器均匀地喷射到半导体基板上时飞溅出工艺腔室。
参考图7A至图7H所示的工艺步骤如下:
步骤1:向下移动腔室护罩7006,将半导体基板7001放置在卡盘7002上,向上移动腔室护罩7006,使半导体基板7001以10-3000rpm的旋转速度旋转;
步骤2:使摆动喷嘴7018旋转进入工艺腔室7005,向半导体基板7001的表面喷洒清洗化学液或去离子水,如图7A所示;
步骤3:停止向半导体基板7001的表面喷洒清洗化学液或去离子水,使摆动喷嘴7018旋转离开工艺腔室7005,然后向下移动腔室护罩7006,如图7B所示;
步骤4:使保护罩7007向下遮盖工艺腔室7005,如图7C所示;
步骤5:向上移动腔室护罩7006,使腔室护罩7006与保护罩7007配合密封工艺腔室7005,然后通过高压分配器7030向半导体基板7001的表面喷射高压化学液或去离子水,如图7D所示;
步骤6:停止向半导体基板7001的表面喷射高压化学液或去离子水,然后向下移动腔室护罩7006,如图7E所示;
步骤7:使保护罩7007向上举起,如图7F所示;
步骤8:向上移动腔室护罩7006,然后使摆动喷嘴7018旋转进入工艺腔室7005向半导体基板7001的表面喷洒清洗化学液或去离子水,如图7G所示;
步骤9:干燥半导体基板7001;
步骤10:使摆动喷嘴7018旋转离开工艺腔室7005,停止旋转半导体基板7001,向下移动腔室护罩7006,然后从卡盘7002上取走半导体基板7001。
在步骤5中,使高压分配器7030在半导体基板7001的中心到边缘之间扫描移动从而使高压化学液或去离子水被均匀喷射到半导体基板7001的表面。高压化学液或去离子水的压力被控制在10-5000psi。高压化学液或去离子水的流量被控制在10-4000ml。
当工艺腔室7005内没有半导体基板被处理并且保护罩7007向上举起时,清洗喷嘴向保护罩7007的内表面喷洒清洗化学液或去离子水,清洗保护罩7007。清洗喷嘴的喷洒持续时间是可编程控制的。保护罩7007的清洗触发条件是基于处理半导体基板的数量或时间累积而可编程控制。
综上所述,本发明通过上述实施方式及相关图式说明,己具体、详实的揭露了相关技术,使本领域的技术人员可以据以实施。而以上所述实施例只是用来说明本发明,而不是用来限制本发明的,本发明的权利范围,应由本发明的权利要求来界定。至于本文中所述元件数目的改变或等效元件的代替等仍都应属于本发明的权利范围。
Claims (24)
1.一种对半导体基板进行湿处理的装置,其特征在于,包括:
工艺腔室;
卡盘,设置在工艺腔室内,保持半导体基板;
旋转驱动器,驱动卡盘旋转;
腔室护罩,包围工艺腔室;
至少一个竖直驱动器,驱动腔室护罩上下移动;
保护罩;
至少一个驱动装置,驱动保护罩向下遮盖或向上举起;
至少一个分配器组件,包括向半导体基板表面喷射液体的分配器;
其中,当保护罩向下遮盖工艺腔室时,腔室护罩向上移动与保护罩配合,密封工艺腔室,防止液体飞溅出工艺腔室,所述保护罩上设置有至少一个排液孔,当保护罩向上翻转举起至竖立状态时,排液孔位于所述保护罩的底部,保护罩上的液体通过至少一个排液孔排出。
2.根据权利要求1所述的装置,其特征在于,所述分配器组件包括线性致动器,该线性致动器控制分配器的扫描运动。
3.根据权利要求1所述的装置,其特征在于,所述保护罩固定在横梁上,横梁的两端连接两个臂,该两个臂由一对驱动装置驱动,使保护罩向下遮盖或向上举起。
4.根据权利要求1所述的装置,其特征在于,进一步包括排液托盘,引导从排液孔排出的液体顺流而下。
5.根据权利要求1所述的装置,其特征在于,所述保护罩上设置有至少一个清洗喷嘴,向保护罩的内表面喷洒清洗液,清洗保护罩。
6.根据权利要求5所述的装置,其特征在于,所述清洗喷嘴呈一定角度安装,防止清洗液喷射到腔室护罩的内部。
7.根据权利要求5所述的装置,其特征在于,所述清洗喷嘴的喷洒持续时间以及保护罩的清洗触发条件是可编程控制的。
8.根据权利要求1所述的装置,其特征在于,所述保护罩的顶部截面呈斜坡状或弧状。
9.根据权利要求1所述的装置,其特征在于,进一步包括至少一个摆动喷嘴,设置在工艺腔室的旁边,向半导体基板的表面喷化学液或去离子水或干燥气体。
10.根据权利要求9所述的装置,其特征在于,进一步包括旋转致动器,驱动摆动喷嘴旋转。
11.根据权利要求1所述的装置,其特征在于,当保护罩向下遮盖或向上举起时,腔室护罩位于工艺腔室的下方位置。
12.根据权利要求2所述的装置,其特征在于,所述分配器安装在安装座上,该安装座固定在摆臂的一端,线性致动器驱动摆臂绕轴旋转,从θ1旋转至θ2,当旋转驱动器驱动卡盘旋转时,在摆臂从θ1转动至θ2的过程中,从半导体基板的中心至边缘,液体被均匀地喷射到半导体基板表面。
13.根据权利要求12所述的装置,其特征在于,半导体基板表面与分配器之间的距离“d”通过调节摆臂的长度而被调节。
14.根据权利要求2所述的装置,其特征在于,所述分配器安装在安装座上,该安装座固定在杆的一端,线性致动器驱动杆沿轴移动,从L1移动到L2,当旋转驱动器驱动卡盘旋转时,在杆沿轴从L1移动到L2的过程中,从半导体基板的中心至边缘,液体被均匀地喷射到半导体基板表面。
15.根据权利要求14所述的装置,其特征在于,分配器与半导体基板表面之间的距离“d”通过调节杆的长度而被调节。
16.根据权利要求1所述的装置,其特征在于,通过分配器喷射到半导体基板表面的液体压力控制在10psi-5000psi。
17.一种对半导体基板进行湿处理的方法,其特征在于,包括:
向下移动腔室护罩;
使保护罩向下遮盖工艺腔室,所述保护罩上设置有至少一个排液孔;
向上移动腔室护罩使其与保护罩配合,密封工艺腔室,然后利用分配器向半导体基板表面喷射化学液或去离子水;
停止向半导体基板表面喷射化学液或去离子水,然后向下移动腔室护罩;
使保护罩向上举起,当所述保护罩向上翻转举起至竖立状态时,排液孔位于保护罩的底部,保护罩上的液体通过至少一个排液孔排出。
18.根据权利要求17所述的方法,其特征在于,进一步包括使分配器在半导体基板的中心至边缘扫描运动,以向半导体基板表面均匀喷射化学液或去离子水。
19.根据权利要求17所述的方法,其特征在于,化学液或去离子水的压力控制在10psi-5000psi。
20.根据权利要求17所述的方法,其特征在于,化学液或去离子水的流量控制在10ml-4000ml。
21.根据权利要求17所述的方法,其特征在于,进一步包括:当工艺腔室内没有半导体基板被处理且保护罩向上举起时,向保护罩的内表面喷洒清洗化学液或去离子水,清洗保护罩。
22.根据权利要求21所述的方法,其特征在于,清洗化学液或去离子水的喷洒持续时间以及保护罩的清洗触发条件是可编程控制的。
23.根据权利要求17所述的方法,其特征在于,在向下移动腔室护罩的步骤之前,进一步包括以下步骤:
将半导体基板放置在卡盘上,向上移动腔室护罩,旋转半导体基板;
旋转摆动喷嘴使其进入工艺腔室向半导体基板的表面喷洒清洗化学液或去离子水;
停止向半导体基板的表面喷洒清洗化学液或去离子水,旋转摆动喷嘴使其离开工艺腔室。
24.根据权利要求23所述的方法,其特征在于,在使保护罩向上举起的步骤之后,进一步包括以下步骤:
向上移动腔室护罩,然后旋转摆动喷嘴使其进入工艺腔室向半导体基板表面喷洒清洗化学液或去离子水;
干燥半导体基板;
旋转摆动喷嘴使其离开工艺腔室,停止旋转半导体基板,向下移动腔室护罩,然后从卡盘上取走半导体基板。
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Family Cites Families (16)
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JPH10172945A (ja) * | 1996-12-09 | 1998-06-26 | Nittetsu Semiconductor Kk | ウエハー洗浄装置 |
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US20030192570A1 (en) * | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
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US20060042664A1 (en) * | 2004-08-30 | 2006-03-02 | Vishwas Hardikar | Apparatus and method for removing a liquid from a rotating substrate surface |
KR100797079B1 (ko) * | 2006-07-12 | 2008-01-22 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP5284004B2 (ja) * | 2008-08-20 | 2013-09-11 | 芝浦メカトロニクス株式会社 | 基板の処理装置 |
JP5646354B2 (ja) * | 2011-01-25 | 2014-12-24 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5708506B2 (ja) * | 2011-04-20 | 2015-04-30 | 東京エレクトロン株式会社 | 処理装置 |
US10573507B2 (en) * | 2014-03-28 | 2020-02-25 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
CN105289923A (zh) | 2014-05-30 | 2016-02-03 | 盛美半导体设备(上海)有限公司 | 一种晶圆涂胶机和涂胶方法 |
JP6523643B2 (ja) * | 2014-09-29 | 2019-06-05 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN204216011U (zh) * | 2014-10-23 | 2015-03-18 | 北京七星华创电子股份有限公司 | 硅片清洗装置 |
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- 2016-10-25 JP JP2019522438A patent/JP6831134B2/ja active Active
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- 2016-10-25 US US16/344,517 patent/US11626297B2/en active Active
- 2016-10-25 CN CN201680090186.1A patent/CN109891564B/zh active Active
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US11626297B2 (en) | 2023-04-11 |
WO2018076151A1 (en) | 2018-05-03 |
CN109891564A (zh) | 2019-06-14 |
JP2019533315A (ja) | 2019-11-14 |
JP6831134B2 (ja) | 2021-02-17 |
KR102637959B1 (ko) | 2024-02-20 |
SG11201903502WA (en) | 2019-05-30 |
US20190244836A1 (en) | 2019-08-08 |
KR20190067842A (ko) | 2019-06-17 |
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