CN1098537C - 半导体圆片标记 - Google Patents

半导体圆片标记 Download PDF

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CN1098537C
CN1098537C CN96112853A CN96112853A CN1098537C CN 1098537 C CN1098537 C CN 1098537C CN 96112853 A CN96112853 A CN 96112853A CN 96112853 A CN96112853 A CN 96112853A CN 1098537 C CN1098537 C CN 1098537C
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mark
disk
label
semiconductor wafer
wafer
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CN1158000A (zh
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李在城
李镇杓
金楠澈
李承远
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Samsung Electronics Co Ltd
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F23/00Advertising on or in specific articles, e.g. ashtrays, letter-boxes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F3/00Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
    • G09F3/02Forms or constructions
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F3/00Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
    • G09F3/02Forms or constructions
    • G09F2003/0214Stock management
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54406Marks applied to semiconductor devices or parts comprising alphanumeric information
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54413Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54493Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777Edge feature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

本发明公开了一种用于标识圆片的半导体圆片标记。该标记至少包括一个在每个圆片平边区边缘制作的凹槽型记号。因此,为了看到片号,不必从片盒中取出圆片,因此减小了对片子的玷污和损害。

Description

半导体圆片标记
技术领域:
本发明涉及用于半导体圆片的用来标识不同类型的半导体圆片的标记。
背景技术:
为了有效标识用于制造半导器件的圆片,必须在半导体圆片(以下简称为圆片)的预定区域上形成特殊的标记。标记通常是用光刻或激光刻蚀在圆片边缘的表面上制作的预定的字母和数字组成的符号。
一般来说,多个圆片组成一批,存放在一个或两个片盒中。片盒内有一个挨一个的多个插槽,圆片插入其中,这种片盒内圆片间的距离非常小。因此,当圆片存放在片盒内时,很难看到在每个圆片上形成的标记。因此为了找到预定的圆片,必须用镊子把圆片从片盒中取出,然后才能看到在圆片表面上所做的标记。这个过程中,当用镊子把圆片从片盒中取出时,和所取出的圆片相邻的圆片表面可能会被刮伤,因此严重玷污了圆片。
图1是示出表面形成常规标记的圆片的平面图。
如图1所示,用于标识圆片1的由字母和数字组成的标记3做在圆片1平边处的表面上。一般来说,标记包括表示半导体器件种类、批号和片号的字母和数字字符。
然而,由于传统上标记做在圆片平边处的表面上,因此不可能从侧面看到标记。为了在片盒中从多个圆片中找到预定的圆片,要从片盒中取出几个圆片来检查标记,这会在相邻的圆片表面形成刮伤,圆片表面形成的刮伤产生玷污颗粒,因此降低了成品率。
发明内容:
因此,本发明的目的是提供一种用于不需从片盒中取出就能识别半导体圆片的标记。
为了达到上述目的,本发明提供半导体器件制造过程中用于识别圆片的一种半导体圆片标记,这种标记至少包括一个在每个圆片平边边缘处的凹槽记号。
由字母和数字表示的批号和片号最好做在和上述凹槽记号相邻的平边区表面。
由于有了用于半导体圆片的本发明的圆片标号,减少了圆片之间不必要的接触,因此防止了圆片玷污和损害。
通过参照附图对优选实施方式进行详细描述,本发明的目的和优点会更明显。
附图说明:
图1表示具有常规标记的圆片的平面图。
图2是用于说明根据本发明的标记的圆片的示意性平面图。
图3是图2中沿着线III-III处的剖面图。
图4是图2中A处的放大图。
图5表示使用图4中所示的第一记号和第二记号在圆片上制作标记的方法。
图6表示使用图4中所示的第一记号和第二记号在圆片上制作标记的另一种方法。
具体实施方式:
参见图2、图3和图4,标号11表示圆片,字符A表示圆片11的平边区,标号13表示圆片11的平边区A的边缘,标号15表示在圆片11与平边区A的边缘13毗邻的表面上所作的标记。如图3所示,此处标号15的表面由多个凹槽构成。
标号15的凹槽用常规方法的光刻或激光刻蚀形成。如图3和图4所示,标号15的凹槽最好由具有预定宽度的第一记号17和具有宽度比第一记号17宽的第二记号19组成。
当标记15用这种方法制成时,当多个圆片11放置在片盒中并且平边朝上时,这种标记就可以被看到。因此不必从片盒中取出就可以很容易地识别出每一个圆片11。
例如参考图5,这里25个圆片组成一批,第一个圆片由位于平边区边缘左端形成的一个第一记号17组成的标记标识,第二个圆片由位于平边区边缘左端形成的二个第一记号17组成的标记标识。用和以上所述同样的方法,第五个圆片由顺序排列在平边区的边缘的四个第一记号17和一个第二记号19组成的标记来标识。因此,用上述方法表示圆片的标记时,可以很容易地标识出组成一批圆片的所有圆片。
参见图6,对于如图5所示的由25个圆片组成一批的同一个例子,第一个圆片由位于平边边缘左端形成的一个第一记号17组成的标记标识,第二个和第三个圆片分别由位于平边边缘左端的二个和三个第一记号标识。第四个圆片由位于平边边缘左端、在相当于相邻的第一记号17之间间距三倍位置处的一个第一记号17和其右边的一个第二记号19组成的标记来标识,第五个圆片由一个第二记号19组成的标记来标识。用上述方法,很容易标识出一批中的所有圆片。
使用常规方法在和标记15相邻的表面区域形成的字母和数字组成的标识符ID 40也可以很容易地标识出每一个圆片。
根据本发明,不必从片盒中取出圆片就可看到每个圆片的标记。因此,由于不必使用镊子就可看到预定圆片的编号,圆片的表面不会被刮伤,所以避免了圆片的玷污和损伤。
应予以理解的是:本发明并不仅局限于所述的实施方式,对于熟悉这方面技术的人员来说,许多改变和修正都可以包括在本发明的范围内。

Claims (3)

1.一种半导体圆片标记,用来标识制造半导体器件的圆片,所述标记包括至少一个形成于圆片表面且与每一圆片的平边边缘相接触并具有预定宽度和深度的凹槽记号,从而可以不用将圆片从片盒中取出即可从侧面轻易加以识别。
2.根据权利要求1的半导体圆片标记,其中所述凹槽型记号,由至少一个有预定大小的第一记号和/或至少一个一个尺寸大于所述第一记号的第二记号共同组成。
3.根据权利要求1的半导体圆片标记,还包括和所述记号毗邻的批号和片号。
CN96112853A 1995-11-30 1996-09-19 半导体圆片标记 Expired - Fee Related CN1098537C (zh)

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KR1019950045823A KR0147672B1 (ko) 1995-11-30 1995-11-30 웨이퍼를 용이하게 구별하기 위한 라벨
KR45823/95 1995-11-30

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JP (1) JPH09162085A (zh)
KR (1) KR0147672B1 (zh)
CN (1) CN1098537C (zh)
DE (1) DE19636799A1 (zh)
GB (1) GB2307787B (zh)
TW (1) TW328851U (zh)

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JPH10256105A (ja) * 1997-03-11 1998-09-25 Super Silicon Kenkyusho:Kk レーザマークを付けたウェーハ
AU7673598A (en) * 1997-06-12 1998-12-30 Nikon Corporation Substrate for device manufacturing, process for manufacturing the substrate, andmethod of exposure using the substrate
US5933521A (en) * 1997-06-23 1999-08-03 Pasic Engineering, Inc. Wafer reader including a mirror assembly for reading wafer scribes without displacing wafers
JP2001101337A (ja) * 1999-07-26 2001-04-13 Komatsu Ltd ドットマークの読取り装置と読取り方法
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
JP5896810B2 (ja) * 2012-03-30 2016-03-30 オリンパス株式会社 半導体装置
KR102185659B1 (ko) * 2014-02-11 2020-12-03 삼성전자주식회사 웨이퍼의 제조 방법 및 이에 의해 제조된 웨이퍼
US10020264B2 (en) * 2015-04-28 2018-07-10 Infineon Technologies Ag Integrated circuit substrate and method for manufacturing the same

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JPH02183509A (ja) * 1989-01-10 1990-07-18 Seiko Epson Corp 半導体基板の識別方法

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CH604422A5 (zh) * 1973-02-09 1978-09-15 Alsacienne Atom
JPS5572034A (en) * 1978-11-27 1980-05-30 Internatl Rectifier Corp Japan Ltd Preparing semiconductor element
JPS61196512A (ja) * 1985-02-26 1986-08-30 Nec Corp 半導体装置の製造方法
JPH0196920A (ja) * 1987-10-09 1989-04-14 Fujitsu Ltd ウエーハの識別方法
EP0604061A1 (en) * 1992-12-24 1994-06-29 AT&T Corp. Semiconductor fabrication

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JPH02183509A (ja) * 1989-01-10 1990-07-18 Seiko Epson Corp 半導体基板の識別方法

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KR0147672B1 (ko) 1998-08-01
KR970029263A (ko) 1997-06-26
GB2307787A (en) 1997-06-04
TW328851U (en) 1998-03-21
JPH09162085A (ja) 1997-06-20
US5800906A (en) 1998-09-01
DE19636799A1 (de) 1997-06-05
GB9618557D0 (en) 1996-10-16
GB2307787B (en) 2000-10-11
CN1158000A (zh) 1997-08-27

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