CN109804048A - 具有发红光磷光体的复合材料 - Google Patents
具有发红光磷光体的复合材料 Download PDFInfo
- Publication number
- CN109804048A CN109804048A CN201780062204.XA CN201780062204A CN109804048A CN 109804048 A CN109804048 A CN 109804048A CN 201780062204 A CN201780062204 A CN 201780062204A CN 109804048 A CN109804048 A CN 109804048A
- Authority
- CN
- China
- Prior art keywords
- lighting device
- heat conduction
- hydroxide
- phosphate
- conduction material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000002131 composite material Substances 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 138
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 22
- -1 polyethylene Polymers 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000003513 alkali Substances 0.000 claims abstract description 9
- 150000004820 halides Chemical class 0.000 claims abstract description 9
- LMBFAGIMSUYTBN-MPZNNTNKSA-N teixobactin Chemical compound C([C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H](CCC(N)=O)C(=O)N[C@H]([C@@H](C)CC)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H]1C(N[C@@H](C)C(=O)N[C@@H](C[C@@H]2NC(=N)NC2)C(=O)N[C@H](C(=O)O[C@H]1C)[C@@H](C)CC)=O)NC)C1=CC=CC=C1 LMBFAGIMSUYTBN-MPZNNTNKSA-N 0.000 claims abstract description 9
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 7
- 239000010432 diamond Substances 0.000 claims abstract description 7
- 229910052582 BN Inorganic materials 0.000 claims abstract description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004698 Polyethylene Substances 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 claims abstract description 6
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 claims abstract description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 6
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims abstract description 6
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims abstract description 6
- 239000000920 calcium hydroxide Substances 0.000 claims abstract description 6
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000292 calcium oxide Substances 0.000 claims abstract description 6
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims abstract description 6
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims abstract description 6
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims abstract description 6
- 239000000347 magnesium hydroxide Substances 0.000 claims abstract description 6
- GVALZJMUIHGIMD-UHFFFAOYSA-H magnesium phosphate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GVALZJMUIHGIMD-UHFFFAOYSA-H 0.000 claims abstract description 6
- 239000004137 magnesium phosphate Substances 0.000 claims abstract description 6
- 229910000157 magnesium phosphate Inorganic materials 0.000 claims abstract description 6
- 229960002261 magnesium phosphate Drugs 0.000 claims abstract description 6
- 235000010994 magnesium phosphates Nutrition 0.000 claims abstract description 6
- 239000002121 nanofiber Substances 0.000 claims abstract description 6
- 229920000573 polyethylene Polymers 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910001866 strontium hydroxide Inorganic materials 0.000 claims abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 6
- JOPDZQBPOWAEHC-UHFFFAOYSA-H tristrontium;diphosphate Chemical compound [Sr+2].[Sr+2].[Sr+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JOPDZQBPOWAEHC-UHFFFAOYSA-H 0.000 claims abstract description 6
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims abstract description 5
- 229910021502 aluminium hydroxide Inorganic materials 0.000 claims abstract description 5
- 229940009859 aluminum phosphate Drugs 0.000 claims abstract description 5
- 229910001863 barium hydroxide Inorganic materials 0.000 claims abstract description 5
- WAKZZMMCDILMEF-UHFFFAOYSA-H barium(2+);diphosphate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O WAKZZMMCDILMEF-UHFFFAOYSA-H 0.000 claims abstract description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 5
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 5
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 claims abstract description 5
- 229910021511 zinc hydroxide Inorganic materials 0.000 claims abstract description 5
- 229940007718 zinc hydroxide Drugs 0.000 claims abstract description 5
- 239000001506 calcium phosphate Substances 0.000 claims abstract description 4
- 229910000389 calcium phosphate Inorganic materials 0.000 claims abstract description 4
- 235000011010 calcium phosphates Nutrition 0.000 claims abstract description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 4
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 claims abstract description 4
- 229960001714 calcium phosphate Drugs 0.000 claims abstract description 3
- 239000011572 manganese Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 16
- 229910052708 sodium Inorganic materials 0.000 claims description 16
- 229910052712 strontium Inorganic materials 0.000 claims description 16
- 229910052700 potassium Inorganic materials 0.000 claims description 14
- 229910052701 rubidium Inorganic materials 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- 229910052792 caesium Inorganic materials 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 239000011777 magnesium Substances 0.000 claims description 10
- 229910052727 yttrium Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229920002050 silicone resin Polymers 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 238000003682 fluorination reaction Methods 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 239000011698 potassium fluoride Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- UUVBYOGFRMMMQL-UHFFFAOYSA-N calcium;phosphoric acid Chemical compound [Ca].OP(O)(O)=O UUVBYOGFRMMMQL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims 4
- 235000011164 potassium chloride Nutrition 0.000 claims 2
- 235000003270 potassium fluoride Nutrition 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010426 asphalt Substances 0.000 claims 1
- OCAYIKGFPQXMPN-UHFFFAOYSA-N barium;phosphoric acid Chemical compound [Ba].OP(O)(O)=O OCAYIKGFPQXMPN-UHFFFAOYSA-N 0.000 claims 1
- 235000013339 cereals Nutrition 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000011575 calcium Substances 0.000 description 23
- 229910052791 calcium Inorganic materials 0.000 description 13
- 239000002096 quantum dot Substances 0.000 description 13
- 229910052950 sphalerite Inorganic materials 0.000 description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 11
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910004074 SiF6 Inorganic materials 0.000 description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 5
- 239000003446 ligand Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 239000004218 Orcein Substances 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 241000736199 Paeonia Species 0.000 description 2
- 235000006484 Paeonia officinalis Nutrition 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 229920013822 aminosilicone Polymers 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 239000001045 blue dye Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052956 cinnabar Inorganic materials 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000001046 green dye Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 229910052909 inorganic silicate Inorganic materials 0.000 description 2
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000019248 orcein Nutrition 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- VDULMXJUOWIPGE-UHFFFAOYSA-N 1-phenylisoquinoline quinoline Chemical class N1=CC=CC2=CC=CC=C12.C1(=CC=CC=C1)C1=NC=CC2=CC=CC=C12 VDULMXJUOWIPGE-UHFFFAOYSA-N 0.000 description 1
- SSABEFIRGJISFH-UHFFFAOYSA-N 2-(2,4-difluorophenyl)pyridine Chemical compound FC1=CC(F)=CC=C1C1=CC=CC=N1 SSABEFIRGJISFH-UHFFFAOYSA-N 0.000 description 1
- 150000005360 2-phenylpyridines Chemical class 0.000 description 1
- 229910003373 AgInS2 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910015894 BeTe Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910021593 Copper(I) fluoride Inorganic materials 0.000 description 1
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005987 Ge3N4 Inorganic materials 0.000 description 1
- 229910005829 GeS Inorganic materials 0.000 description 1
- 229910005866 GeSe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 241000764773 Inna Species 0.000 description 1
- 206010023126 Jaundice Diseases 0.000 description 1
- 229910020440 K2SiF6 Inorganic materials 0.000 description 1
- 229910020491 K2TiF6 Inorganic materials 0.000 description 1
- 229910020148 K2ZrF6 Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910017623 MgSi2 Inorganic materials 0.000 description 1
- 229910004883 Na2SiF6 Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920000291 Poly(9,9-dioctylfluorene) Polymers 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/16—Halogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/32—Phosphorus-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
- C09K11/616—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/617—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Planar Illumination Modules (AREA)
- Led Device Packages (AREA)
Abstract
照明装置包括辐射连接于复合材料的LED光源,所述复合材料包括分散在至少一部分粘结材料中的式I的磷光体和导热材料。导热材料包括选自以下的材料:氧化铟、氧化锡、氧化铟锡、氧化钙、氧化钡、氧化锶、氢氧化铝、氢氧化镁、氢氧化钙、氢氧化钡、氢氧化锶、氢氧化锌、磷酸铝、磷酸镁、磷酸钙、磷酸钡、磷酸锶、金刚石、石墨烯、聚乙烯纳米纤维、碳纳米管、银金属纳米颗粒、铜金属纳米颗粒、金金属纳米颗粒、铝金属纳米颗粒、氮化硼、氮化硅、碱金属卤化物、氟化钙、氟化镁、式II的化合物及其组合。
Description
有关联邦赞助的研究和开发的声明
本发明利用由美国能源部授予的合同号DEEE0003251下的政府支持完成。政府在本发明中享有一定权利。
背景
基于被Mn4+活化的复合氟化物材料的发红光磷光体(如在US 7358542、US 7497973和US 7648649中描述的那些)可以与发黄/绿光磷光体(例如YAG:Ce或其他石榴石组合物)组合使用,以从蓝色LED获得暖白光(黑体轨迹上CCT<5000 K、显色指数(CRI) >80 ),等效于现今荧光灯、白炽灯和卤素灯所产生的暖白光。这些材料强烈吸收蓝光,且高效地在约610-635纳米(nm)之间发射,而鲜有深红色/NIR发射。因此,相较于在视觉敏感性差的更深红色中有明显发射的红色磷光体,发光效能被最大化。在蓝色(440-460nm)激发下量子效率可超过85%。
虽然使用Mn4+活化(或掺杂)的氟化物主体的照明系统的效能和CRI可以非常高,一个潜在的限制是它们在制造和使用条件下(例如在高温和湿度下)对降解敏感。使用合成后加工步骤可降低该降解,如US 8252613中描述的。然而,期望开发其他提高材料稳定性的方法。
简述
简单来说,在一方面,照明装置包括辐射连接于复合材料的发光二极管(LED)光源,所述复合材料包括分散在至少一部分粘结材料中的式I的磷光体和导热材料,
Ax [(M,Mn)Fy]
(I)
其中导热材料包含选自以下的材料:氧化铟、氧化锡、氧化铟锡、氧化钙、氧化钡、氧化锶、氢氧化铝、氢氧化镁、氢氧化钙、氢氧化钡、氢氧化锶、氢氧化锌、磷酸铝、磷酸镁、磷酸钙、磷酸钡、磷酸锶、金刚石、石墨烯、聚乙烯纳米纤维、碳纳米管、银金属纳米颗粒、铜金属纳米颗粒、金金属纳米颗粒、铝金属纳米颗粒、氮化硼、氮化硅、碱金属卤化物、氟化钙、氟化镁、式II的化合物及其组合;
Ax [MFy]
(II)
其中A在每次出现时独立地为Li、Na、K、Rb、Cs、或其组合,M在每次出现时独立地为Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd、或其组合,x在每次出现时独立地为[(M,Mn)Fy]离子和[MFy]离子上电荷的绝对值,并且y是5、6或者7。
在一方面,照明装置包括辐射连接于复合材料的LED光源。复合材料包括磷光体层和布置于磷光体层上的导热层,磷光体层包含分散在至少一部分的第一粘结材料中的式I的磷光体,导热层包含分散在第二粘结材料中的导热材料。导热材料包括选自以下的材料:氧化铟、氧化锡、氧化铟锡、氧化钙、氧化钡、氧化锶、氢氧化铝、氢氧化镁、氢氧化钙、氢氧化钡、氢氧化锶、氢氧化锌、磷酸铝、磷酸镁、磷酸钙、磷酸钡、磷酸锶、金刚石、石墨烯、聚乙烯纳米纤维、碳纳米管、银金属纳米颗粒、铜金属纳米颗粒、金金属纳米颗粒、铝金属纳米颗粒、氮化硼、氮化硅、碱金属卤化物、氟化钙、氟化镁、式II的化合物及其组合。
附图
当参考附图阅读以下详述时,本发明的这些以及其他特征、方面和优点将变得更好理解,在附图中,同样的字符在整个附图中代表同样的部件,其中:
图1是根据本公开的一个实施方案的照明装置的横截面示意图;以及
图2是根据本公开的另一个实施方案的照明装置的横截面示意图。
详述
在以下说明书以及权利要求中,单数形式“一个”、“一”和“该”包含复数对象,除非上下文明确地另外指明。本文所用术语“或”不意味着排他,而是指被提及的组分中的至少一种存在,且包括被提及的组分的组合可存在的情况,除非上下文明确地另外指明。
本文在整个说明书和权利要求中所使用的近似的语言,可用于修饰任意定量表达,该定量表达可容许改变而不引起其所涉及的基本功能的变化。因此,被诸如“约”和 “大致上”的一个或多个术语修饰的数值不局限于指定的精确数值。在某些情况下,近似的语言可对应于测量该数值的仪器的精度。
本文所用术语 “磷光体”、“磷光体组合物”以及“磷光体材料” 既可用于表示单种磷光体也可以是两种以上磷光体的共混物。本文所用术语 “灯”、 “照明装置”和“照明系统” 指任意可见和紫外光源,所述可见和紫外光可通过至少一种发光元件产生,该发光元件在被赋予能量时产生光发射,例如磷光体材料或发光二极管。
本文所用术语 “层” 指以连续或非连续的方式布置在至少一部分下层表面上的材料。另外,术语 “层” 不一定意味着被布置材料的一致厚度,且被布置材料可具有一致或可变化的厚度。本文所用术语“布置在……上” 指层或材料直接互相接触地布置,或者通过在其间具有中间层或特征而间接地布置,除非另外具体指明。
参考图1,照明装置构造的非限制性实例,例如灯10,根据一个实施方案示出。灯10包括发光二极管(LED)光源例如LED芯片12,和电力附接至 LED 芯片12的导线14。导线14可包括细金属丝,该金属丝由较粗导线架16支撑,或导线14可包括自体支撑的电极而可省略导线架16。导线14提供电流至LED芯片12且因此导致LED芯片12发射辐射。
所述光源可以是任何蓝或紫外光源,当它发射的辐射被指引到磷光体上时,能够产生白光。LED芯片10可以是发近紫外或蓝光的LED。LED芯片10可包含基于任何合适的III-V、II-VI或 IV-IV族半导体层、且具有约250至550纳米(nm)的发射波长的半导体二极管。具体来说,LED芯片10可含有至少一个包含GaN、ZnSe或SiC的半导体层。例如,LED芯片10可包含由式IniGajAlkN(其中0≤i;0≤j;0≤k 并且 i +j +k =1)表示的氮化物化合物半导体,该半导体具有大于约250 nm且小于约550nm的发射波长。在一个实施方案中,LED芯片10是发蓝光LED芯片,其具有约400至约500nm的峰值发射波长。
尽管此处讨论的本公开的示例性结构的一般论述指向基于LED的光源,且更具体地,基于无机LED的光源,但应注意,除非另外指出,该LED芯片可由基于有机LED的光源或任何其他光源替换,且所有对LED芯片的提及仅仅代表合适的光源。
LED 芯片12可包封在壳18内,其将LED芯片12和包封材料20封入。壳18可以是例如玻璃或者塑料。LED芯片12可大致在包封材料 20中心。包封材料20可以是环氧树脂、塑料、低温玻璃、聚合物或任何其他如在本领域所知的合适的包封材料。在某些实施方案中,包封材料20是环氧树脂或聚合物材料,例如硅树脂。壳18和包封材料20两者都应该是透明的,或者相对于由LED芯片12、式1的磷光体(如下所述)、任何另外的发光材料(如下所述)或其组合发射的光的波长而言大致上可透射的,以传输通过那些元件。
或者,灯10可不带壳18而只包含包封材料20。LED芯片12可以例如使用导线架16、自体支撑电极、壳18的底端、或安装在导线架16上的底座(未示出)中的一个以上来支撑。在某些实施方案中,LED芯片12安装在反射杯(未示出)内。反射杯可由反射材料制成或由其涂覆,所述反射材料为例如氧化铝、氧化钛或其他本领域所知的介电材料。
在灯 10内,LED芯片12辐射连接于复合材料。复合材料包括分散在至少一部分粘结材料中的式I的磷光体和导热材料。辐射连接意味着元件互相关联,使得从一个发射的辐射被传输到另一个。如在图1中说明的,复合材料的层22布置于LED芯片12的表面11的至少一部分上。层22可使用合适的方法布置于LED芯片12的表面11的该部分上。在一个非局限性实例中,可形成式I的磷光体的颗粒和导热材料随机或均匀地悬浮在其中的硅树脂浆料,且浆料的层可沉积于LED芯片12的表面11的至少一部分上。所说明的实施方案仅仅是灯10中的LED芯片12和复合材料的可能位置的实例。
在一些其他的实施方案中,复合材料可涂覆在灯10的壳18的内表面17上,而不是直接布置在LED芯片12上。复合材料可涂覆在壳18的整个内表面17上或内表面17的一个或多个部分上。举例来说,由参考数字19标示的内表面17的一部分可被复合材料涂覆。可选择内表面17的这样的部分19,以使所需量的来自LED芯片12的光通过选择的部分。另外地或备选地,复合材料可位于壳18以外的一个以上的合适的位置。
参考图2,在一些实施方案中,灯 30包括复合材料,所述复合材料包括布置于LED芯片12的表面11的至少一部分上的磷光体层24、和布置于磷光体层24上的包括导热材料的导热层26。磷光体层24包括分散在至少一部分的第一粘结材料中的式I的磷光体(如本文所述)。导热层26包括分散在至少一部分的第二粘结材料中的导热材料(如本文所述)。所述第一粘结材料和第二粘结材料包括如下文描述的合适的粘结材料。在一些实施方案中,第一粘结材料和第二粘结材料是一样的。磷光体层24和导热层26可使用各自的浆料分别地布置,第一浆料具有分散在第一粘结材料中的式I的磷光体颗粒,且第二浆料具有分散在第二粘结材料中的导热材料。
对第一和/或第二粘结材料合适的材料可包括如下的材料,所述材料对于由LED芯片12、式I的磷光体、另外的发光材料(如下所述)或其组合发射的光是光学透明的,并且在化学和光学上与式I的磷光体、导热材料以及照明装置中的任意周围材料或层兼容。用于如本文所述的照明装置的第一和/或第二粘结材料的材料的实例可包括环氧树脂,硅树脂和硅树脂衍生物(包括但不局限于:氨基硅树脂 (AMS)、聚苯基甲基硅氧烷、聚苯基烷基硅氧烷、聚二苯基硅氧烷、聚二烷基硅氧烷、硅倍半氧烷、氟化硅树脂以及乙烯基和氢化物取代的硅树脂),低温玻璃,或其组合。
式I的磷光体是复合氟化物。在一个实施方案中,式I的磷光体是锰(Mn4+)掺杂的复合氟化物。复合氟化物具有包含一个配位中心的主晶格,被充当配体的氟离子包围,并按要求被抗衡离子(A)电荷补偿。 例如,在K2[SiF6]中,配位中心是Si且抗衡离子是K。复合氟化物一般表现为简单二元氟化物的组合。复合氟化物的化学式中的方括号(偶尔为简化而省略)表明存在于那个具体复合氟化物中的复合离子是新的化学物种,与简单的氟离子不同。在式I的磷光体中,Mn4+掺杂物或活化剂充当另外的配位中心,取代例如Si的一部分配位中心形成发光中心。锰掺杂的式I的磷光体:A2[(M,Mn)F6] 也可表示为A2[MF6]:Mn4+。主晶格(包括抗衡离子) 可进一步修改活化剂离子的激发和发射性质。如本文所用术语“式I的磷光体” 和“锰掺杂的磷光体”可在整个说明书中可互换地使用。
式I中的抗衡离子A是Li、Na、K、Rb、Cs或其组合,且y是6。在某些实施方案中,A是Na、K、Rb或其组合。式I的配位中心是选自Si、Ge、Ti、Zr、Hf、Sn、Al、Ga、In、Sc、Y、Bi、La、Gd、Nb、Ta及其组合的元素。在某些实施方案中,M是Si、Ge、Ti或其组合。在一些实施方案中,A是K且M是Si。式I的磷光体的实例包括:K2[SiF6]:Mn4+、K2[TiF6]:Mn4+、K2[SnF6]:Mn4+、Cs2[TiF6]:Mn4+、Rb2[TiF6]:Mn4+、Cs2[SiF6]:Mn4+、Rb2[SiF6]:Mn4+、Na2[TiF6]:Mn4+、Na2[ZrF6]:Mn4+、K3[ZrF7]:Mn4+、K3[BiF6]:Mn4+、K3[YF6]:Mn4+、K3[LaF6]:Mn4+、K3[GdF6]:Mn4+、K2[NbF7]:Mn4+和K2[TaF7]:Mn4+。在某些实施方案中,式I的磷光体是 K2[SiF6]:Mn4+。
其他可用于本文所述的照明装置的锰掺杂的磷光体包括:
(A) A2[MF5]:Mn4+,其中A选自:Li、Na、K、Rb、Cs及其组合;且其中M选自:Al、Ga、In及其组合;
(B) A3[MF6]:Mn4+,其中A选自:Li、Na、K、Rb、Cs及其组合;且其中M选自:Al、Ga、In及其组合;
(C) Zn2[MF7]:Mn4+,其中M选自:Al、Ga、In及其组合;
(D) A[In2F7]:Mn4+ 其中A选自:Li、Na、K、Rb、Cs及其组合;
(E) E[MF6]:Mn4+,其中E选自:Mg、Ca、Sr、Ba、Zn及其组合;且其中M选自Ge、Si、Sn、Ti、Zr及其组合;
(F) Ba0.65Zr0.35F2.70:Mn4+;以及
(G) A3[ZrF7]:Mn4+ 其中A 选自:Li、Na、K、Rb、Cs及其组合。
在一些实施方案中,锰掺杂的磷光体(例如式I的磷光体)可经后处理以增强性能和颜色稳定性质,以获得颜色稳定的锰掺杂的磷光体,如美国专利号8252613中描述。后处理过程包括在升高的温度下使锰掺杂的磷光体(例如,式I的磷光体)接触气态形式的含氟氧化剂。
如本文所描述的式I的磷光体中锰的量可在约1.2摩尔%(mol%)(约0.3重量%(wt%))至约16.5mol%(约4 wt%)的范围中。在一些实施方案中,锰的量的范围可以是约2mol% (约0.5 wt%) 至13.4 mol% (约3.3wt%),或约2 mol%至12.2 mol%(约3 wt%),或约2mol%至11.2mol%(约2.76wt%),或约2 mol%至约10 mol%(约2.5wt%),或约2 mol%至5.5mol%(约1.4wt%),或约2 mol%至约3.0mol%(约0.75 wt%)。
用于复合材料的层22(图1)和/或磷光体层24 (图2)中的式I的磷光体可具有其中D50粒度在约10微米至约80微米的范围的粒度分布。在一些实施方案中,期望使用具有更小粒度的颗粒,例如小于约30微米的D50粒度。在一些实施方案,式I的磷光体的 D50粒度在约10微米至约20微米的范围中。在具体实施方案中,式I的磷光体的D50粒度在约12 微米至约18微米的范围中。
用于如本文所述的照明装置的导热材料包括选自以下的材料: 氧化铟、氧化锡、氧化铟锡、氧化钙、氧化钡、氧化锶、氢氧化铝、氢氧化镁、氢氧化钙、氢氧化钡、氢氧化锶、氢氧化锌、磷酸铝、磷酸镁、磷酸钙、磷酸钡、磷酸锶、金刚石、石墨烯、聚乙烯纳米纤维、碳纳米管、银金属纳米颗粒、铜金属纳米颗粒、金金属纳米颗粒、铝金属纳米颗粒、氮化硼、氮化硅、碱金属卤化物、氟化钙、氟化镁、式II的化合物及其组合;
Ax[MFy]
(II)
其中, 式II的化合物中的A是Li、Na、K、Rb、Cs或其组合并且式II的化合物中的M为选自Si、Ge、Ti、Zr、Hf、Sn、Al、Ga、In、Sc、Y、Bi、La、Gd、Nb、Ta及其组合的元素。在一些实施方案中, A是 Na、K、Rb或其组合。在一些实施方案中, M是Si、Ge、Ti或其组合。
在一些实施方案中,导热材料包括导热率高于5瓦特每米开尔文(W/m.K)的材料。在一些实施方案中,导热材料不含锰。
碱金属卤化物可包括 Na、K、Rb、Cs的氟化物、氯化物或溴化物或其组合。碱金属卤化物的适当的实例包括KF、KHF2、KCl、KBr、NaF、NaHF2、RbF、RbHF2、CsF、CsHF2或其组合。在一些实施方案中,在式II的化合物中,A包括K、Na或其组合。在某些实施方案中,A是K且M是Si。式II的化合物的适当的实例包括但不局限于:K2SiF6、K2TiF6、K2ZrF6、K2SnF6、K3ZrF7、K3LnF6、K3YF6、K2NbF7、K2TaF7、Na2SiF6、Na2TiF6、Na2SnF6、Na2ZrF6、LiKSiF6、RbKLiAlF6 或其组合。
式I的磷光体、导热材料或两者可均匀或非均匀地分散于第一粘结材料、第二粘结材料或如本文所述的粘结材料中。基于复合材料的总量,导热材料可以大于1重量%的量存在。在一些实施方案中,基于复合材料的总量,导热材料以约1重量%至约50重量%范围内的量存在。在一些实施方案中,基于复合材料的总量,导热材料以约5重量%至约30重量%范围内的量存在。在一些实施方案中,基于复合材料的总量,导热材料以约10重量%至约20重量%范围内的量存在。
导热材料可具有细的粒度分布,例如亚微米尺寸或更小。导热材料的细颗粒可避免由LED 芯片12、式I的磷光体、任何另外的发光材料或其组合发射的光的不合需要的散射。在一些实施方案中,导热材料的平均粒度小于1微米。 在一些实施方案中,导热材料的平均粒度的范围为约 0.01 微米至约0.5微米。
不受任何理论限制,据信,在照明装置的制造或运行期间,例如在高温下,在复合材料中如上面描述的导热材料以及式I的磷光体的存在可有助于降低或阻止式I的磷光体的降解。
除式I的磷光体以外,照明装置10还可包括一种或多种另外的发光材料,例如无机磷光体、量子点(QD)材料、电致发光聚合物以及磷光染料。发射例如绿色、蓝色、黄色、红色、橙色或其他颜色的辐射的另外的发光材料可用于定制所得光,例如相关色温(CCT)在2500-10000K范围内且CRI在50-99范围内的白光。在某些实施方案中,另外的发光材料包括发绿光磷光体,例如Ce3+掺杂的石榴石磷光体。
在复合材料包括分散在粘结材料中的式I的磷光体和导热材料的实施方案中,另外的发光材料可与式I的磷光体和导热材料一起加入复合材料。例如,式I的磷光体可与一种或多种另外的发光材料共混在复合材料中以得到白光,所述另外的发光材料为例如发绿、蓝、黄、橙或红光的磷光体或QD材料。在一些其他的情况下,另外的发光材料可分开地布置于照明装置中,例如在本文所述灯10中,以使LED芯片12辐射连接于另外的发光材料。另外的发光材料可分开地分散于任何如本文所述的粘结材料中,且层可布置于照明装置中的适合位置。例如,当包括复合材料的层22如图1所示布置于LED芯片12的表面11上时,包括另外的发光材料的层(未在图1示出)可布置于层22之上,或层22和LED芯片12的表面11之间。
在一些情况下,如图2所说明的,另外的发光材料可与式I的磷光体一起加入磷光体层24,或与导热材料一起加入导热层26。在一些其他情况下,包括另外的发光材料的层(未在图2示出)可布置于LED芯片12的表面11上,位于磷光体层24和表面11之间或磷光体层24和导热层26之间。
适合用于照明装置10的另外的磷光体可包括但不局限于:
((Sr1-z (Ca, Ba, Mg, Zn) z)1-(x+w)( Li, Na, K, Rb) wCex)3(Al1-ySiy)O4+y+3(x-w)F1-y-3(x-w), 0<x≤0.10, 0≤y≤0.5, 0≤z≤0.5, 0≤w≤x; (Ca, Ce)3Sc2Si3O12 (CaSiG);(Sr,Ca,Ba)3Al1-xSixO4+xF1-x:Ce3+ (SASOF)); (Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+;(Ba,Sr,Ca)BPO5:Eu2+,Mn2+;(Sr,Ca)10(PO4)6*νB2O3:Eu2+ (其中0<ν≤1); Sr2Si3O8*2SrCl2:Eu2+;(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+; BaAl8O13:Eu2+;2SrO*0.84P2O5*0.16B2O3:Eu2+; (Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+; (Ba,Sr,Ca)Al2O4:Eu2+; (Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+;ZnS:Cu+,Cl-; ZnS:Cu+,Al3+; ZnS:Ag+,Cl-; ZnS:Ag+,Al3+; (Ba,Sr,Ca)2Si1-ξO4-2ζ:Eu2+ (其中-0.2≤ξ≤0.2); (Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+; (Sr,Ca,Ba)(Al,Ga,In)2S4:Eu2+;(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+ (其中0≤α≤0.5); (Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+; Na2Gd2B2O7:Ce3+,Tb3+; (Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+; (Gd,Y,Lu,La)2O3:Eu3+,Bi3+; (Gd,Y,Lu,La)2O2S:Eu3+,Bi3+; (Gd,Y,Lu,La)VO4:Eu3+,Bi3+; (Ca,Sr)S:Eu2+,Ce3 +; SrY2S4:Eu2+; CaLa2S4:Ce3+;(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+; (Y,Lu)2WO6:Eu3+,Mo6+; (Ba,Sr,Ca)βSiγNμ:Eu2+ (其中2β+4γ=3μ); (Ba,Sr,Ca)2Si5-xAlxN8-xOx:Eu2+ (其中0≤x≤2);Ca3(SiO4)Cl2:Eu2+; (Lu,Sc,Y,Tb)2-u-vCevCa1+uLiwMg2-wPw(Si,Ge)3-wO12-u/2 (其中0.5≤u≤1,0<v≤0.1且0≤w≤0.2); (Y,Lu,Gd)2-ψCaψSi4N6+ψC1-ψ:Ce3+, (其中0≤ψ≤0.5);(Lu,Ca,Li,Mg,Y), α-SiAlON掺杂有Eu2+和/或Ce3+; (Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+;β-SiAlON:Eu2+,3.5MgO*0.5MgF2*GeO2:Mn4+;(Sr,Ca,Ba)AlSiN3:Eu2+; (Sr,Ca,Ba)3SiO5:Eu2+; Ca1-c- fCecEufAl1+cSi1-cN3, (其中0≤c≤0.2,0≤f≤0.2); Ca1-h-rCehEurAl1-h(Mg,Zn)hSiN3, (其中0≤h≤0.2,0≤r≤0.2); Ca1-2s-tCes(Li,Na)sEutAlSiN3, (其中0≤s≤0.2,0≤t≤0.2,s+t>0);和Ca1-σ-χ-φCeσ (Li,Na)χEuφAl1+σ-χSi1-σ+χN3, (其中0≤σ≤0.2,0≤χ≤0.4,0≤φ≤0.2)。
在一些实施方案中,另外的发光材料包括发绿光量子点(QD)材料。发绿光QD材料可包括II-VI族化合物、III-V族化合物、IV-IV族化合物、IV族化合物、I-III-VI2族化合物或其混合物。II-VI族化合物的非局限性实例包括:CdSe、CdTe、CdS、ZnSe、ZnTe、ZnS、HgTe、HgS、HgSe、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe或其组合。III-V族化合物可选自:GaN、GaP、GaAs、AlN、AlP、AlAs、InN、InP、InAs、GaNP、GaNAs、GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GalnNP、GalnNAs、GalnPAs、InAlNP、InAlNAs、InAlPAs及其组合。IV族化合物的实例包括Si、Ge、SiC和SiGe。I-III-VI2族黄铜矿型化合物的实例包括CuInS2、CuInSe2、CuGaS2、CuGaSe2、AgInS2、AgInSe2、AgGaS2、AgGaSe2及其组合。
作为另外的发光材料使用的QD材料可以是核/壳QD,包括核、至少一个覆盖于核上的壳、和包括一种以上配体(优选有机聚合物配体)的外部涂层。制备核-壳QD的示例性材料包括但不局限于:Si、Ge、Sn、Se、Te、B、C (包括金刚石)、P、Co、Au、BN、BP、BAs、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、ZnO、ZnS、ZnSe、ZnTe、CdS、CdSe、CdSeZn、CdTe、HgS、HgSe、HgTe、BeS、BeSe、BeTe、MgS、MgSe、MnS、MnSe、GeS、GeSe、GeTe、SnS、SnSe、SnTe、PbO、PbS、PbSe、PbTe、CuF、CuCl、CuBr、CuI、Si3N4、Ge3N4、Al2O3、(Al, Ga, In)2(S, Se, Te)3、Al2CO以及两种以上此类材料的适当组合。示例性核-壳QD包括但不局限于:CdSe/ZnS、CdSe/CdS、CdSe/CdS/ZnS、CdSeZn/CdS/ZnS、CdSeZn/ZnS、InP/ZnS、PbSe/PbS、PbSe/PbS、CdTe/CdS和CdTe/ZnS。
QD材料通常包括与它们的表面共轭、协作、关联或附接的配体。具体地,QD可包括含有配体的涂层以保护QD免受环境条件侵害、控制聚集并且可以让QD在主体粘结材料中分散,所述环境条件包括:升高的温度、高强度的光、外部气体和湿气。
电致发光聚合物的实例可包括聚芴,优选聚(9,9-二辛基芴) 及其共聚物,如聚(9,9’-二辛基芴-共聚-双-N,N'-(4-丁基苯基)二苯胺) (F8-TFB);聚(乙烯基咔唑);和聚苯撑乙炔及它们的衍生物。适合用作磷光染料的材料可包括但不限于:三(1-苯基异喹啉)合铱(III)(红色染料)、三(2-苯基吡啶)合铱(绿色染料)和双(2-(4,6-二氟苯基)吡啶根-N,C2)合铱(III)(蓝色染料)。也可使用来自ADS(American Dyers Source,Inc.)的市售可得的荧光和磷光金属络合物。ADS绿色染料包括:ADS060GE、ADS061GE、ADS063GE、ADS066GE、ADS078GE和ADS090GE。ADS蓝色染料包括:ADS064BE、ADS065BE和ADS070BE。ADS红色染料包括:ADS067RE、ADS068RE、ADS069RE、ADS075RE、ADS076RE、ADS067RE和ADS077RE。
各发光材料的比率,例如式I的磷光体和另外的发光材料的比率,可根据所需的所得光输出的特征而改变。照明装置内各发光材料的相对比例可经调整,以使得在各发光材料的发射被混合且用于照明装置时,在国际照明委员会(CIE)创建的色度图上产生预定的x和y值的可见光。在某些实施方案中,照明装置发射白光。在一些实施方案中,所得白光可具有在约0.20至约0.55范围内的x值,且y值在约0.20至约0.55的范围内。本文所述照明装置中的各发光材料准确的身份和量可根据终端用户的需求变化。
尽管没有说明,图1和2中的灯10和30还可包括可嵌入在包封材料20中的散射颗粒。散射颗粒可包括例如:氧化铝 (Al2O3)、氧化钛 (TiO2)、氧化锆 (ZrO2)、氧化锌 (ZnO)或其组合。散射颗粒可按包封材料20总量的小于或等于约0.2重量%的量存在。在一些实施方案中,散射颗粒可按包封材料20总量的小于或等于约0.1重量%的量存在。散射颗粒可具有例如大于1微米的平均粒度,以有效地散射由LED芯片、式I的磷光体、另外的发光材料或其组合发射的相干光,其吸收量可忽略不计。在一些实施方案中,散射颗粒具有约1微米至约10微米范围内的平均粒度。
上文所述的复合材料可用于与LED无关的另外的应用。例如,复合材料可用于荧光灯、阴极射线管、等离子显示设备或液晶显示器(LCD)。复合材料还可用于闪烁体,在电磁热量计、伽马射线照相机、计算机断层扫描仪或激光器中。这些用途意在仅仅是示例性的,而不是排他的。
照明装置的非限制性实例包括由发光二极管(LED)激发的设备例如荧光灯、阴极射线管、等离子显示设备、液晶显示器(LCD’s)、紫外(UV)激发设备如彩色灯、背光照明设备、液晶显示器(LCD)、等离子屏幕、氙气激发灯和UV激发标记系统。这些设备的清单意在仅仅是示例性的,而不是排他的。在一些实施方案中,背光设备包括本文所述的照明装置。背光设备可包括表面安装设备(SMD)结构。背光设备的实例包括但不局限于:电视、计算机、监测器、智能手机、平板电脑和其他具有显示器的手持设备,所述显示器包括本文所述的LED光源。
虽然本文仅对本发明的某些特征进行了说明和描述,但本领域技术人员将想到许多修改和变化。因此,应理解,所附权利要求书旨在涵盖落入本发明真实精神范围内的所有此类修改和变化。
Claims (20)
1.照明装置,其包含:
辐射连接于复合材料的发光二极管(LED)光源,所述复合材料包含分散在至少一部分粘结材料中的式I的磷光体和导热材料,
Ax [(M,Mn)Fy]
(I)
其中导热材料包含选自以下的材料:氧化铟、氧化锡、氧化铟锡、氧化钙、氧化钡、氧化锶、氢氧化铝、氢氧化镁、氢氧化钙、氢氧化钡、氢氧化锶、氢氧化锌、磷酸铝、磷酸镁、磷酸钙、磷酸钡、磷酸锶、金刚石、石墨烯、聚乙烯纳米纤维、碳纳米管、银金属纳米颗粒、铜金属纳米颗粒、金金属纳米颗粒、铝金属纳米颗粒、氮化硼、氮化硅、碱金属卤化物、氟化钙、氟化镁、式II的化合物及其组合;
Ax [MFy]
(II)
其中A在每次出现时独立地为Li、Na、K、Rb、Cs或其组合,M在每次出现时独立地为 Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、 Nb、 Ta、Bi、Gd或其组合,x在每次出现时独立地为[(M,Mn)Fy]离子和[MFy]离子上电荷的绝对值,且y为5、6或7。
2.根据权利要求1所述的照明装置,其中导热材料的平均粒度小于1微米。
3.根据权利要求1所述的照明装置,其中导热材料的平均粒度在约0.01微米至约0.5微米的范围内。
4.根据权利要求1所述的照明装置,其中基于复合材料总量,导热材料以约1重量%至约50重量%的范围存在。
5.根据权利要求1所述的照明装置,其中基于复合材料总量,导热材料以约10重量%至约20重量%的范围存在。
6.根据权利要求1所述的照明装置,其中导热材料不含锰。
7.根据权利要求1所述的照明装置,其中碱金属卤化物包含氟化钾、氯化钾、溴化钾或其组合。
8.根据权利要求1所述的照明装置,其中A是K且M是Si。
9.根据权利要求1所述的照明装置,其中粘结材料包含硅树脂或硅树脂衍生物、环氧树脂或低温玻璃。
10.背光设备,其包含根据权利要求1所述的照明装置。
11.照明装置,其包含:
辐射连接于复合材料的LED光源,所述复合材料包含:
包含式I的磷光体的磷光体层,所述磷光体分散在至少一部分的第一粘结材料中;以及
Ax [(M,Mn)Fy]
I
布置于磷光体层上的包含导热材料的导热层,所述导热材料分散于第二粘结材料中;其中导热材料包含选自以下的材料:氧化铟、氧化锡、氧化铟锡、氧化钙、氧化钡、氧化锶、氢氧化铝、氢氧化镁、氢氧化钙、氢氧化钡、氢氧化锶、氢氧化锌、磷酸铝、磷酸镁、磷酸钙、磷酸钡、磷酸锶、金刚石、石墨烯、聚乙烯纳米纤维、碳纳米管、银金属纳米颗粒、铜金属纳米颗粒、金金属纳米颗粒、铝金属纳米颗粒、氮化硼、氮化硅、碱金属卤化物、氟化钙、氟化镁、式II的化合物及其组合;
Ax[MFy]
(II)
其中A在每次出现时独立地为Li、Na、K、Rb、Cs或其组合,M在每次出现时独立地为Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd或其组合,x在每次出现时独立地为[(M,Mn)Fy]离子和[MFy]离子上电荷的绝对值,且y为5、6或7。
12.根据权利要求11所述的照明装置,其中导热材料的平均粒度小于1微米。
13.根据权利要求11所述的照明装置,其中导热材料的平均粒度在约0.01微米至约0.5微米的范围内。
14.根据权利要求11所述的照明装置,其中基于复合材料的量,导热材料以约1重量%至约50重量%的范围存在。
15.根据权利要求11所述的照明装置,其中基于复合材料的量,导热材料以约10重量%至约20重量%的范围存在。
16.根据权利要求11所述的照明装置,其中导热材料不含锰。
17.根据权利要求11所述的照明装置,其中碱金属卤化物包含氟化钾、氯化钾、溴化钾或其组合。
18.根据权利要求11所述的照明装置,其中A是K且M是Si。
19.根据权利要求11所述的照明装置,其中所述第一粘结材料和第二粘结材料包含硅树脂或者硅树脂衍生物、环氧树脂或低温玻璃。
20.背光设备,其包含根据权利要求11所述的照明装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/231,026 US10193030B2 (en) | 2016-08-08 | 2016-08-08 | Composite materials having red emitting phosphors |
PCT/US2017/051705 WO2018032021A1 (en) | 2016-08-08 | 2017-09-15 | Composite materials having red emitting phosphors |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109804048A true CN109804048A (zh) | 2019-05-24 |
Family
ID=60186342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780062204.XA Pending CN109804048A (zh) | 2016-08-08 | 2017-09-15 | 具有发红光磷光体的复合材料 |
Country Status (9)
Country | Link |
---|---|
US (1) | US10193030B2 (zh) |
EP (1) | EP3497182B1 (zh) |
JP (1) | JP7361602B2 (zh) |
KR (1) | KR102463480B1 (zh) |
CN (1) | CN109804048A (zh) |
CA (1) | CA3032757C (zh) |
MX (1) | MX2019001611A (zh) |
MY (1) | MY192181A (zh) |
WO (1) | WO2018032021A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114477989A (zh) * | 2020-11-11 | 2022-05-13 | 中国科学院福建物质结构研究所 | 一种石墨烯改性的绿光透明陶瓷材料及其制备方法和应用 |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1845352A (zh) * | 2005-04-08 | 2006-10-11 | 日亚化学工业株式会社 | 具有由丝网印刷形成的有机硅树脂层的发光器件 |
CN1919967A (zh) * | 2005-08-26 | 2007-02-28 | 明达光电(厦门)有限公司 | 鸡尾酒荧光粉 |
CN101025966A (zh) * | 2006-02-15 | 2007-08-29 | 株式会社理光 | 双层可记录光学记录介质 |
CN101150157A (zh) * | 2006-09-22 | 2008-03-26 | 亿光电子工业股份有限公司 | 高导热发光二极管封装结构 |
CN101346818A (zh) * | 2005-09-29 | 2009-01-14 | 发光装置公司 | 波长转换发光器件 |
CN102234410A (zh) * | 2010-04-28 | 2011-11-09 | 上海合复新材料科技有限公司 | 导热型热固性模塑复合材料及其用途 |
CN102304284A (zh) * | 2011-08-22 | 2012-01-04 | 金发科技股份有限公司 | 一种导热树脂组合物及其制备方法 |
CN102513947A (zh) * | 2011-09-20 | 2012-06-27 | 宁波鼎鑫砂轮制造有限公司 | 重负荷磨削树脂砂轮的制造方法 |
CN102544312A (zh) * | 2010-12-15 | 2012-07-04 | 日东电工株式会社 | 光学半导体器件 |
CN102714261A (zh) * | 2009-11-23 | 2012-10-03 | 皇家飞利浦电子股份有限公司 | 波长转换半导体发光二极管 |
CN102859727A (zh) * | 2010-03-19 | 2013-01-02 | 美光科技公司 | 具有增强散热性的发光二极管和相关联的操作方法 |
CN104040712A (zh) * | 2011-12-22 | 2014-09-10 | 日东电工株式会社 | 半导体装置、光学半导体装置及散热构件 |
CN104114671A (zh) * | 2012-02-16 | 2014-10-22 | 皇家飞利浦有限公司 | 用于半导体led的涂布的窄带发红光氟硅酸盐 |
US20150028365A1 (en) * | 2013-07-24 | 2015-01-29 | Juanita N. Kurtin | Highly refractive, transparent thermal conductors for better heat dissipation and light extraction in white leds |
US20150184067A1 (en) * | 2013-12-27 | 2015-07-02 | Nichia Corporation | Fluoride fluorescent material and method for producing the same |
CN104893718A (zh) * | 2011-03-23 | 2015-09-09 | 通用电气公司 | 颜色稳定的锰掺杂的磷光体 |
CN105255479A (zh) * | 2015-09-28 | 2016-01-20 | 上海皇广光电科技有限公司 | 一种胶体量子点荧光粉复合薄膜制备方法 |
CN106029706A (zh) * | 2014-02-27 | 2016-10-12 | 信实工业公司 | 用于制备导热性定向uhmwpe产品以及从中获得产品的工艺 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5770962B2 (ja) | 1999-12-07 | 2015-08-26 | ウィリアム・マーシュ・ライス・ユニバーシティ | ポリマーマトリックス中に埋封された配向ナノ繊維 |
KR100480768B1 (ko) | 1999-12-23 | 2005-04-06 | 삼성에스디아이 주식회사 | 전도성 발광물질을 이용한 저전압 구동용 적색 형광체 및그 제조방법 |
US7160619B2 (en) | 2003-10-14 | 2007-01-09 | Advanced Energy Technology Inc. | Heat spreader for emissive display device |
US7648649B2 (en) | 2005-02-02 | 2010-01-19 | Lumination Llc | Red line emitting phosphors for use in led applications |
US7497973B2 (en) | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
EP1862035B1 (en) | 2005-03-14 | 2013-05-15 | Koninklijke Philips Electronics N.V. | Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same |
WO2006098450A1 (ja) | 2005-03-18 | 2006-09-21 | Mitsubishi Chemical Corporation | 発光装置、白色発光装置、照明装置及び画像表示装置 |
EP2121516A2 (en) | 2006-12-27 | 2009-11-25 | David Bruce Geohegan | Transparent conductive nano-composites |
JP2009169204A (ja) * | 2008-01-18 | 2009-07-30 | Hitachi Displays Ltd | 液晶表示装置 |
US8329060B2 (en) | 2008-10-22 | 2012-12-11 | General Electric Company | Blue-green and green phosphors for lighting applications |
US8541933B2 (en) | 2010-01-12 | 2013-09-24 | GE Lighting Solutions, LLC | Transparent thermally conductive polymer composites for light source thermal management |
US8593062B2 (en) | 2010-04-29 | 2013-11-26 | General Electric Company | Color stable phosphors for LED lamps and methods for preparing them |
DE102010028776A1 (de) | 2010-05-07 | 2011-11-10 | Osram Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
US8057706B1 (en) * | 2010-07-27 | 2011-11-15 | General Electric Company | Moisture-resistant phosphor and associated method |
US8835199B2 (en) | 2010-07-28 | 2014-09-16 | GE Lighting Solutions, LLC | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration |
DE102010034913B4 (de) * | 2010-08-20 | 2023-03-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierendes Bauelement und Verfahren zur Herstellung des Strahlung emittierenden Bauelements |
KR101535463B1 (ko) | 2010-11-30 | 2015-07-10 | 삼성전자주식회사 | 엘이디 램프 |
JP2012243618A (ja) | 2011-05-20 | 2012-12-10 | Stanley Electric Co Ltd | 光源装置および照明装置 |
JP6069890B2 (ja) * | 2012-05-29 | 2017-02-01 | 日亜化学工業株式会社 | 波長変換用無機成形体及び発光装置 |
JP5966501B2 (ja) * | 2012-03-28 | 2016-08-10 | 日亜化学工業株式会社 | 波長変換用無機成形体及びその製造方法、並びに発光装置 |
DE102012210083A1 (de) | 2012-06-15 | 2013-12-19 | Osram Gmbh | Optoelektronisches halbleiterbauelement |
TWI497781B (zh) | 2012-07-19 | 2015-08-21 | Univ Nat Cheng Kung | 具提升散熱效果之發光二極體裝置及其製備方法 |
JP2014041993A (ja) * | 2012-07-24 | 2014-03-06 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
TWI460265B (zh) | 2012-11-12 | 2014-11-11 | Ritedia Corp | 導熱複合材料及其衍生之發光二極體 |
US9761763B2 (en) * | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
JP2014145012A (ja) * | 2013-01-28 | 2014-08-14 | Mitsubishi Chemicals Corp | 樹脂組成物、波長変換部材、発光装置、led照明器具、及び光学部材 |
US9698314B2 (en) * | 2013-03-15 | 2017-07-04 | General Electric Company | Color stable red-emitting phosphors |
JP2016519850A (ja) | 2013-04-08 | 2016-07-07 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Ledモジュールの製造方法 |
JP6175952B2 (ja) * | 2013-07-19 | 2017-08-09 | 日亜化学工業株式会社 | 発光装置 |
US9399732B2 (en) * | 2013-08-22 | 2016-07-26 | General Electric Company | Processes for preparing color stable manganese-doped phosphors |
US20150123153A1 (en) | 2013-11-06 | 2015-05-07 | General Electric Company | Led package with red-emitting phosphors |
CN105793389B (zh) | 2013-12-13 | 2018-12-04 | 通用电气公司 | 制备颜色稳定的锰掺杂的络合氟化物磷光体的方法 |
CN105849226A (zh) | 2013-12-30 | 2016-08-10 | 通用电气公司 | 耐水分的磷光体组合物及相关方法 |
US9546318B2 (en) | 2014-05-01 | 2017-01-17 | General Electric Company | Process for preparing red-emitting phosphors |
US9512356B2 (en) | 2014-05-01 | 2016-12-06 | General Electric Company | Process for preparing red-emitting phosphors |
JP2015216139A (ja) * | 2014-05-07 | 2015-12-03 | 株式会社小糸製作所 | 発光モジュール |
US9567516B2 (en) | 2014-06-12 | 2017-02-14 | General Electric Company | Red-emitting phosphors and associated devices |
US10563121B2 (en) | 2014-06-12 | 2020-02-18 | Current Lighting Solutions, Llc | Red-emitting phosphors and associated devices |
US9385282B2 (en) | 2014-06-12 | 2016-07-05 | General Electric Company | Color stable red-emitting phosphors |
US9371481B2 (en) | 2014-06-12 | 2016-06-21 | General Electric Company | Color stable red-emitting phosphors |
US9929319B2 (en) | 2014-06-13 | 2018-03-27 | General Electric Company | LED package with red-emitting phosphors |
US9512357B2 (en) | 2014-07-22 | 2016-12-06 | General Electric Company | Red-emitting phosphors, associated processes and devices |
KR102273653B1 (ko) * | 2014-08-29 | 2021-07-06 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
JP2016092271A (ja) * | 2014-11-06 | 2016-05-23 | シャープ株式会社 | 蛍光体シートおよび照明装置 |
KR102542749B1 (ko) | 2014-11-21 | 2023-06-12 | 제네럴 일렉트릭 컴퍼니 | 색 안정성 적색 발광 인광체 |
US9982190B2 (en) | 2015-02-20 | 2018-05-29 | General Electric Company | Color stable red-emitting phosphors |
TWI696726B (zh) | 2015-03-05 | 2020-06-21 | 美商通用電機股份有限公司 | 發紅光磷光體、彼之製法及含彼之裝置 |
KR102167629B1 (ko) | 2015-05-18 | 2020-10-20 | 제네럴 일렉트릭 컴퍼니 | Mn 도핑된 플루오르화물 인광체의 제조 방법 |
JP6947643B2 (ja) | 2015-06-01 | 2021-10-13 | ゼネラル・エレクトリック・カンパニイ | 色安定赤色発光蛍光体 |
JP2017095568A (ja) * | 2015-11-20 | 2017-06-01 | 三菱化学株式会社 | 蛍光体、発光装置、照明装置及び画像表示装置 |
WO2017091303A1 (en) * | 2015-11-26 | 2017-06-01 | General Electric Company | Processes for synthesizing red-emitting phosphors and related red-emitting phosphors |
KR102460162B1 (ko) * | 2015-11-30 | 2022-10-31 | 도레이 카부시키가이샤 | 수지 조성물, 그의 시트상 성형물, 및 그것을 사용한 발광 장치 및 그의 제조 방법 |
KR102122436B1 (ko) | 2015-12-29 | 2020-06-12 | 그리렘 어드밴스드 머티리얼스 캄파니 리미티드 | 적색 형광가루, 그 제조 방법 및 이 적색 형광가루를 포함한 발광소자 |
-
2016
- 2016-08-08 US US15/231,026 patent/US10193030B2/en active Active
-
2017
- 2017-09-15 EP EP17791191.4A patent/EP3497182B1/en active Active
- 2017-09-15 MY MYPI2019000676A patent/MY192181A/en unknown
- 2017-09-15 CA CA3032757A patent/CA3032757C/en active Active
- 2017-09-15 JP JP2019506641A patent/JP7361602B2/ja active Active
- 2017-09-15 KR KR1020197006982A patent/KR102463480B1/ko active IP Right Grant
- 2017-09-15 MX MX2019001611A patent/MX2019001611A/es unknown
- 2017-09-15 WO PCT/US2017/051705 patent/WO2018032021A1/en unknown
- 2017-09-15 CN CN201780062204.XA patent/CN109804048A/zh active Pending
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1845352A (zh) * | 2005-04-08 | 2006-10-11 | 日亚化学工业株式会社 | 具有由丝网印刷形成的有机硅树脂层的发光器件 |
CN1919967A (zh) * | 2005-08-26 | 2007-02-28 | 明达光电(厦门)有限公司 | 鸡尾酒荧光粉 |
CN101346818A (zh) * | 2005-09-29 | 2009-01-14 | 发光装置公司 | 波长转换发光器件 |
CN101025966A (zh) * | 2006-02-15 | 2007-08-29 | 株式会社理光 | 双层可记录光学记录介质 |
CN101150157A (zh) * | 2006-09-22 | 2008-03-26 | 亿光电子工业股份有限公司 | 高导热发光二极管封装结构 |
CN102714261A (zh) * | 2009-11-23 | 2012-10-03 | 皇家飞利浦电子股份有限公司 | 波长转换半导体发光二极管 |
CN102859727A (zh) * | 2010-03-19 | 2013-01-02 | 美光科技公司 | 具有增强散热性的发光二极管和相关联的操作方法 |
CN102234410A (zh) * | 2010-04-28 | 2011-11-09 | 上海合复新材料科技有限公司 | 导热型热固性模塑复合材料及其用途 |
CN102544312A (zh) * | 2010-12-15 | 2012-07-04 | 日东电工株式会社 | 光学半导体器件 |
CN104893718A (zh) * | 2011-03-23 | 2015-09-09 | 通用电气公司 | 颜色稳定的锰掺杂的磷光体 |
CN102304284A (zh) * | 2011-08-22 | 2012-01-04 | 金发科技股份有限公司 | 一种导热树脂组合物及其制备方法 |
CN102513947A (zh) * | 2011-09-20 | 2012-06-27 | 宁波鼎鑫砂轮制造有限公司 | 重负荷磨削树脂砂轮的制造方法 |
CN104040712A (zh) * | 2011-12-22 | 2014-09-10 | 日东电工株式会社 | 半导体装置、光学半导体装置及散热构件 |
CN104114671A (zh) * | 2012-02-16 | 2014-10-22 | 皇家飞利浦有限公司 | 用于半导体led的涂布的窄带发红光氟硅酸盐 |
US20150028365A1 (en) * | 2013-07-24 | 2015-01-29 | Juanita N. Kurtin | Highly refractive, transparent thermal conductors for better heat dissipation and light extraction in white leds |
US20150184067A1 (en) * | 2013-12-27 | 2015-07-02 | Nichia Corporation | Fluoride fluorescent material and method for producing the same |
CN106029706A (zh) * | 2014-02-27 | 2016-10-12 | 信实工业公司 | 用于制备导热性定向uhmwpe产品以及从中获得产品的工艺 |
CN105255479A (zh) * | 2015-09-28 | 2016-01-20 | 上海皇广光电科技有限公司 | 一种胶体量子点荧光粉复合薄膜制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114477989A (zh) * | 2020-11-11 | 2022-05-13 | 中国科学院福建物质结构研究所 | 一种石墨烯改性的绿光透明陶瓷材料及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
CA3032757A1 (en) | 2018-02-15 |
JP7361602B2 (ja) | 2023-10-16 |
EP3497182B1 (en) | 2020-03-25 |
JP2019526929A (ja) | 2019-09-19 |
US20180040782A1 (en) | 2018-02-08 |
CA3032757C (en) | 2021-06-08 |
US10193030B2 (en) | 2019-01-29 |
MY192181A (en) | 2022-08-04 |
EP3497182A1 (en) | 2019-06-19 |
KR20190101952A (ko) | 2019-09-02 |
KR102463480B1 (ko) | 2022-11-04 |
MX2019001611A (es) | 2019-09-26 |
WO2018032021A1 (en) | 2018-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10158052B2 (en) | LED based device with wide color gamut | |
US10230022B2 (en) | Lighting apparatus including color stable red emitting phosphors and quantum dots | |
US8502441B2 (en) | Light emitting device having a coated nano-crystalline phosphor and method for producing the same | |
US11149195B2 (en) | Coated red line emitting phosphors | |
US11008509B2 (en) | Coated manganese doped phosphors | |
TWI798246B (zh) | 經塗覆之摻雜錳的磷光體 | |
TWI732041B (zh) | 具有發射紅光磷光體之複合材料 | |
CN109804048A (zh) | 具有发红光磷光体的复合材料 | |
US9938457B1 (en) | Methods for fabricating devices containing red line emitting phosphors | |
TW202403016A (zh) | 磷光體組合物及其裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |