CN109698134B - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN109698134B
CN109698134B CN201811224425.5A CN201811224425A CN109698134B CN 109698134 B CN109698134 B CN 109698134B CN 201811224425 A CN201811224425 A CN 201811224425A CN 109698134 B CN109698134 B CN 109698134B
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semiconductor device
barrier layer
semiconductor element
opening
plan
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CN109698134A (zh
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大月高实
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供能够抑制半导体元件的倾斜的半导体装置。本发明涉及的半导体装置具有阻挡层(4)，该阻挡层(4)设置为在金属图案(1)之上具有开口部，阻挡层(4)具有向开口部内凸出的凸起部，该半导体装置还具有：半导体元件(5)，其外形尺寸小于开口部的除了凸起部以外的外形尺寸；以及焊料(3)，其设置在开口部内，将金属图案(1)和半导体元件(5)接合，阻挡层(4)具有多个凸起部，该多个凸起部在俯视观察时与半导体元件(5)重叠，且对半导体元件(5)的厚度方向进行限制。

Description

半导体装置
技术领域
本发明涉及一种半导体装置，该半导体装置具有将金属图案和半导体元件通过焊料进行接合的构造。
背景技术
当前，存在下述半导体装置，该半导体装置具有将金属图案和半导体元件通过焊料进行接合的构造。就该半导体装置而言，当在半导体元件的正下方设置的焊料熔融时，无法将焊料的厚度保持均等，存在有时接合后的半导体元件倾斜这样的问题。
作为上述问题的对策，当前，提出了下述方法，即，在配置半导体元件的部位预先设置导线键合，确保该导线键合的直径的量的厚度。另外，公开了具有以将焊料包围的方式设置的阻挡层(resist)的半导体装置(例如，参照专利文献1)。
专利文献1：日本特开2006-49777号公报
但是，确保导线键合的直径的量的厚度的方法需要追加用于设置导线键合的工序，存在耗费生产时间及生产成本等问题。另外，在专利文献1中，无法抑制半导体元件的倾斜。
发明内容
本发明就是为了解决上述的问题而提出的，其目的在于提供能够抑制半导体元件的倾斜的半导体装置。
为了解决上述的课题，本发明涉及的半导体装置具有阻挡层，该阻挡层设置为在金属图案之上具有开口部，所述阻挡层具有向所述开口部内凸出的凸起部，该半导体装置还具有：半导体元件，其外形尺寸小于所述开口部的除了所述凸起部以外的外形尺寸；以及焊料，其设置在所述开口部内，将所述金属图案和所述半导体元件接合，所述阻挡层具有多个所述凸起部，多个所述凸起部在俯视观察时与所述半导体元件重叠，且对所述半导体元件的厚度方向进行限制。
发明的效果
根据本发明，半导体装置具有阻挡层，该阻挡层设置为在金属图案之上具有开口部，所述阻挡层具有向所述开口部内凸出的凸起部，该半导体装置还具有：半导体元件，其外形尺寸小于所述开口部的除了所述凸起部以外的外形尺寸；以及焊料，其设置在所述开口部内，将所述金属图案和所述半导体元件接合，所述阻挡层具有多个所述凸起部，多个所述凸起部在俯视观察时与所述半导体元件重叠，且对所述半导体元件的厚度方向进行限制，由此能够抑制半导体元件的倾斜。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的结构的一个例子的俯视图。
图2是表示本发明的实施方式1涉及的半导体装置的结构的一个例子的剖视图。
图3是表示本发明的实施方式2涉及的半导体装置的结构的一个例子的俯视图。
图4是表示本发明的实施方式3涉及的半导体装置的结构的一个例子的俯视图。
图5是表示本发明的实施方式4涉及的半导体装置的结构的一个例子的俯视图。
图6是表示本发明的实施方式5涉及的半导体装置的结构的一个例子的剖视图。
标号的说明
1金属图案，2绝缘层，3焊料，4阻挡层，5半导体元件，6控制电极焊盘。
具体实施方式
下面，基于附图对本发明的实施方式进行说明。
＜实施方式1＞
图1是表示本发明的实施方式1涉及的半导体装置的结构的一个例子的俯视图。另外，图2是图1中的A1-A2处的剖视图。
如图1、2所示，在绝缘层2之上设置有金属图案1。在金属图案1之上设置有阻挡层4，该阻挡层4具有四边形的开口部。阻挡层4的厚度例如小于或等于50μm。半导体元件5在与焊料3接合的面具有4个控制电极焊盘6。半导体元件5的外形尺寸小于阻挡层4的开口部的除了凸起部以外的外形尺寸。
焊料3设置在阻挡层4的开口部内，将金属图案1和半导体元件5进行接合。换言之，阻挡层4设置于在半导体元件5的正下方设置的焊料3的周围，以抑制焊料3的润湿扩展。
阻挡层4具有向开口部内凸出的多个凸起部。具体而言，阻挡层4在开口部的各边具有1个凸起部。各凸起部在俯视观察时与半导体元件5重叠，且对半导体元件5的厚度方向进行限制。
此外，在图1、2的例子中，示出了阻挡层4在开口部的各边具有1个凸起部的情况，但并不限定于此。阻挡层4只要在开口部的各边至少具有1个凸起部即可。
阻挡层4的各凸起部和半导体元件5既可以直接接触，也可以经由焊料3进行接触。控制电极焊盘6不限于4个，至少具有1个即可。
由此，根据本实施方式1，阻挡层4的凸起部在俯视观察时与半导体元件5重叠，且对半导体元件5的厚度方向进行限制，因此能够对半导体元件5陷入焊料3中的距离施加限制。即，能够以阻挡层4的厚度的量，确保金属图案1与半导体元件5的厚度方向的距离，因此能够抑制半导体元件5的倾斜。另外，使半导体元件5的正下方的焊料3的厚度变得均等，因此能够抑制对在半导体元件5产生的热量进行散热时的局部的散热性的恶化，能够抑制由长时间的使用导致的焊料3处的局部的裂纹的扩展等。
此外，就使用了SiC的半导体元件等外形尺寸小的半导体元件而言，其倾斜有可能变大，因此对于具有上述半导体元件的半导体装置而言更为有效。
＜实施方式2＞
图3是表示本发明的实施方式2涉及的半导体装置的结构的一个例子的俯视图。
如图3所示，本实施方式2涉及的半导体装置的特征在于，阻挡层4在开口部的4个角各自具有凸起部。其他结构与实施方式1相同，因此在这里省略说明。
此外，在图3的例子中，示出了阻挡层4在开口部的4个角各自具有凸起部的情况，但并不限于此。阻挡层4只要在开口部的至少2个角各自具有凸起部即可。
由此，根据本实施方式2，获得与实施方式1相同的效果。另外，阻挡层4在开口部的至少2个角各自具有凸起部，因此成为容易对在半导体元件5产生的热量进行散热的构造。即，本实施方式2涉及的半导体装置成为散热性能比实施方式1涉及的半导体装置优异的构造。
此外，在上述内容中，对阻挡层4在开口部的至少2个角各自具有凸起部的半导体装置的构造进行了说明，但并不限定于此。本实施方式2涉及的半导体装置的构造例如也可以是将图1、2所示的实施方式1涉及的半导体装置的构造和图3所示的实施方式2涉及的半导体装置的构造任意组合而成的构造。
＜实施方式3＞
图4是表示本发明的实施方式3涉及的半导体装置的结构的一个例子的俯视图。
如图4所示，本实施方式3涉及的半导体装置的特征在于，阻挡层4的凸起部是对开口部的内侧的角进行了倒角的形状。其他结构与实施方式2相同，因此在这里省略说明。
由此，根据本实施方式3，获得与实施方式1相同的效果。另外，阻挡层4的凸起部是对开口部的内侧的角进行了倒角的形状，因此在俯视观察时凸起部与半导体元件5重叠的面积变小。由此，本实施方式3涉及的半导体装置成为散热性能比实施方式2涉及的半导体装置优异的构造。
＜实施方式4＞
图5是表示本发明的实施方式4涉及的半导体装置的结构的一个例子的俯视图。
如图5所示，本实施方式4涉及的半导体装置的特征在于，阻挡层4至少具有在俯视观察时与控制电极焊盘6重叠的凸起部。其他结构与实施方式1相同，因此在这里省略说明。
此外，在图5的例子中，示出了阻挡层4具有在俯视观察时与控制电极焊盘6重叠的2个凸起部的情况，但并不限定于此。在俯视观察时与控制电极焊盘6重叠的凸起部至少具有1个即可。
由此，根据本实施方式4，获得与实施方式1相同的效果。另外，阻挡层4具有在俯视观察时与在半导体元件5动作时几乎不产生热量的控制电极焊盘6重叠的凸起部，因此成为容易对在半导体元件5产生的热量进行散热的构造。即，本实施方式4涉及的半导体装置成为散热性能比实施方式1～3涉及的半导体装置优异的构造。
此外，在上述中，对阻挡层4至少具有在俯视观察时与控制电极焊盘6重叠的凸起部的半导体装置的构造进行了说明，但并不限定于此。本实施方式4涉及的半导体装置的构造例如也可以是将图1、2所示的实施方式1涉及的半导体装置的构造、图3所示的实施方式2涉及的半导体装置的构造和图4所示的实施方式3涉及的半导体装置的构造任意组合而成的构造。
＜实施方式5＞
图6是表示本发明的实施方式5涉及的半导体装置的结构的一个例子的剖视图。
如图6所示，半导体元件5具有发热区域7和在俯视观察时将该发热区域7包围的非发热区域8。阻挡层4具有在俯视观察时与半导体元件5的非发热区域8重叠的凸起部。其他结构与实施方式1相同，因此在这里省略说明。
在阻挡层4的凸起部的凸出方向上，凸起部与非发热区域8在俯视观察时重叠的距离T比非发热区域8的距离L短。特别是，当假定在发热区域7产生的热量从该发热区域7以45°扩散的情况下，凸起部与非发热区域8在俯视观察时重叠的距离T满足0＜T≤L－d的关系。在这里，d为半导体元件5的正下方的焊料3的厚度。
由此，根据本实施方式5，获得与实施方式1相同的效果。另外，在阻挡层4的凸起部的凸出方向上，通过对凸起部与非发热区域8在俯视观察时重叠的距离进行限制，从而成为容易对在半导体元件5产生的热量进行散热的构造。即，本实施方式5涉及的半导体装置成为散热性能比实施方式1～4涉及的半导体装置优异的构造。
此外，在上述内容中，基于实施方式1进行了说明，但并不限定于此。本实施方式5涉及的半导体装置的构造例如也可以是将图1、2所示的实施方式1涉及的半导体装置的构造、图3所示的实施方式2涉及的半导体装置的构造、图4所示的实施方式3涉及的半导体装置的构造和图5所示的实施方式4涉及的半导体装置的构造任意组合而成的构造。
此外，本发明能够在其发明的范围内对各实施方式自由地进行组合，或者对各实施方式适当地进行变形、省略。

Claims (9)

1.一种半导体装置，其特征在于，
具有阻挡层，该阻挡层设置为在金属图案之上具有开口部，
所述阻挡层具有向所述开口部内凸出的凸起部，
该半导体装置还具有：
半导体元件，其外形尺寸小于所述开口部的除了所述凸起部以外的外形尺寸；以及
焊料，其设置在所述开口部内，将所述金属图案和所述半导体元件接合，
所述阻挡层具有多个所述凸起部，多个所述凸起部在俯视观察时与所述半导体元件重叠，且对所述半导体元件的厚度方向进行限制，
多个所述凸起部的至少一个与所述半导体元件直接接触。
2.根据权利要求1所述的半导体装置，其特征在于，
所述开口部为四边形，
所述阻挡层在所述开口部的各边至少具有1个所述凸起部。
3.根据权利要求1所述的半导体装置，其特征在于，
所述开口部为四边形，
所述阻挡层在所述开口部的至少2个角各自具有所述凸起部。
4.根据权利要求2所述的半导体装置，其特征在于，
所述开口部为四边形，
所述阻挡层在所述开口部的至少2个角各自具有所述凸起部。
5.根据权利要求3所述的半导体装置，其特征在于，
所述凸起部为对所述开口部的内侧的角进行了倒角的形状。
6.根据权利要求4所述的半导体装置，其特征在于，
所述凸起部为对所述开口部的内侧的角进行了倒角的形状。
7.根据权利要求1至6中任一项所述的半导体装置，其特征在于，
所述半导体元件在与所述焊料接合的面至少具有1个控制电极焊盘，
所述阻挡层至少具有在俯视观察时与所述控制电极焊盘重叠的所述凸起部。
8.根据权利要求1至6中任一项所述的半导体装置，其特征在于，
所述半导体元件具有发热区域和将该发热区域包围的非发热区域，
所述阻挡层具有在俯视观察时与所述非发热区域重叠的所述凸起部，
在所述凸起部的凸出方向上，所述凸起部与所述非发热区域在俯视观察时重叠的距离比所述非发热区域的距离短。
9.根据权利要求7所述的半导体装置，其特征在于，
所述半导体元件具有发热区域和将该发热区域包围的非发热区域，
所述阻挡层具有在俯视观察时与所述非发热区域重叠的所述凸起部，
在所述凸起部的凸出方向上，所述凸起部与所述非发热区域在俯视观察时重叠的距离比所述非发热区域的距离短。
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