CN109658967B - 包括存储器平面的非易失性存储器设备及其操作方法 - Google Patents

包括存储器平面的非易失性存储器设备及其操作方法 Download PDF

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Publication number
CN109658967B
CN109658967B CN201811189134.7A CN201811189134A CN109658967B CN 109658967 B CN109658967 B CN 109658967B CN 201811189134 A CN201811189134 A CN 201811189134A CN 109658967 B CN109658967 B CN 109658967B
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memory
planes
peak power
plane
interval
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Chinese (zh)
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CN109658967A (zh
Inventor
全秀昶
朴相元
沈烔敎
郭东勋
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0625—Power saving in storage systems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0653—Monitoring storage devices or systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
CN201811189134.7A 2017-10-12 2018-10-12 包括存储器平面的非易失性存储器设备及其操作方法 Active CN109658967B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170132752A KR102631350B1 (ko) 2017-10-12 2017-10-12 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법
KR10-2017-0132752 2017-10-12

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CN109658967A CN109658967A (zh) 2019-04-19
CN109658967B true CN109658967B (zh) 2023-08-29

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US (1) US10712955B2 (enExample)
JP (1) JP7280027B2 (enExample)
KR (1) KR102631350B1 (enExample)
CN (1) CN109658967B (enExample)
DE (1) DE102018116927B4 (enExample)

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US11056195B1 (en) * 2020-04-27 2021-07-06 Macronix International Co., Ltd. Nonvolatile memory device and related driving method
US11200001B2 (en) * 2020-05-15 2021-12-14 Micron Technology, Inc. Management of power during memory device reset and initialization
US11385810B2 (en) * 2020-06-30 2022-07-12 Sandisk Technologies Llc Dynamic staggering for programming in nonvolatile memory
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US11532348B2 (en) * 2020-12-02 2022-12-20 Micron Technology, Inc. Power management across multiple packages of memory dies
US11520497B2 (en) 2020-12-02 2022-12-06 Micron Technology, Inc. Peak power management in a memory device
US12513898B2 (en) 2021-01-05 2025-12-30 Samsung Electronics Co., Ltd. Semiconductor device and data storage system including the same
US12362022B2 (en) * 2022-08-15 2025-07-15 Micron Technology, Inc. Scheduled interrupts for peak power management token ring communication
US12118219B2 (en) 2022-09-06 2024-10-15 SanDisk Technologies, Inc. Asymmetric time division peak power management (TD-PPM) timing windows
US11893253B1 (en) 2022-09-20 2024-02-06 Western Digital Technologies, Inc. Dynamic TD-PPM state and die mapping in multi-NAND channels
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Also Published As

Publication number Publication date
KR20190041319A (ko) 2019-04-22
US20190114099A1 (en) 2019-04-18
DE102018116927B4 (de) 2024-11-28
US10712955B2 (en) 2020-07-14
JP7280027B2 (ja) 2023-05-23
CN109658967A (zh) 2019-04-19
KR102631350B1 (ko) 2024-01-31
JP2019075105A (ja) 2019-05-16
DE102018116927A1 (de) 2019-04-18

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