KR102631350B1 - 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법 - Google Patents

메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법 Download PDF

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KR102631350B1
KR102631350B1 KR1020170132752A KR20170132752A KR102631350B1 KR 102631350 B1 KR102631350 B1 KR 102631350B1 KR 1020170132752 A KR1020170132752 A KR 1020170132752A KR 20170132752 A KR20170132752 A KR 20170132752A KR 102631350 B1 KR102631350 B1 KR 102631350B1
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memory
planes
plane
peak power
memory device
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KR20190041319A (ko
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전수창
박상원
심동교
곽동훈
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삼성전자주식회사
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Priority to KR1020170132752A priority Critical patent/KR102631350B1/ko
Priority to DE102018116927.2A priority patent/DE102018116927B4/de
Priority to JP2018180268A priority patent/JP7280027B2/ja
Priority to US16/145,772 priority patent/US10712955B2/en
Priority to CN201811189134.7A priority patent/CN109658967B/zh
Publication of KR20190041319A publication Critical patent/KR20190041319A/ko
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0625—Power saving in storage systems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0653—Monitoring storage devices or systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
KR1020170132752A 2017-10-12 2017-10-12 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법 Active KR102631350B1 (ko)

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KR1020170132752A KR102631350B1 (ko) 2017-10-12 2017-10-12 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법
DE102018116927.2A DE102018116927B4 (de) 2017-10-12 2018-07-12 Nicht-flüchtige Speichervorrichtung einschließlich Speicherebenen und Betriebsverfahren davon
JP2018180268A JP7280027B2 (ja) 2017-10-12 2018-09-26 メモリプレーンを含む不揮発性メモリ装置及びその動作方法
US16/145,772 US10712955B2 (en) 2017-10-12 2018-09-28 Non-volatile memory device including memory planes, and operating method thereof
CN201811189134.7A CN109658967B (zh) 2017-10-12 2018-10-12 包括存储器平面的非易失性存储器设备及其操作方法

Applications Claiming Priority (1)

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KR1020170132752A KR102631350B1 (ko) 2017-10-12 2017-10-12 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법

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KR20190041319A KR20190041319A (ko) 2019-04-22
KR102631350B1 true KR102631350B1 (ko) 2024-01-31

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US (1) US10712955B2 (enExample)
JP (1) JP7280027B2 (enExample)
KR (1) KR102631350B1 (enExample)
CN (1) CN109658967B (enExample)
DE (1) DE102018116927B4 (enExample)

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US11270759B2 (en) 2019-10-21 2022-03-08 Samsung Electronics Co., Ltd. Flash memory device and computing device including flash memory cells
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US11056195B1 (en) * 2020-04-27 2021-07-06 Macronix International Co., Ltd. Nonvolatile memory device and related driving method
US11200001B2 (en) * 2020-05-15 2021-12-14 Micron Technology, Inc. Management of power during memory device reset and initialization
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US11532348B2 (en) * 2020-12-02 2022-12-20 Micron Technology, Inc. Power management across multiple packages of memory dies
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US20240152295A1 (en) * 2022-11-08 2024-05-09 Micron Technology, Inc. Peak power management with dynamic data path operation current budget management

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KR20190041319A (ko) 2019-04-22
US20190114099A1 (en) 2019-04-18
DE102018116927B4 (de) 2024-11-28
CN109658967B (zh) 2023-08-29
US10712955B2 (en) 2020-07-14
JP7280027B2 (ja) 2023-05-23
CN109658967A (zh) 2019-04-19
JP2019075105A (ja) 2019-05-16
DE102018116927A1 (de) 2019-04-18

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